Method for quickly growing large-size SiC (Silicon Carbide) single crystal

A silicon carbide single crystal, fast technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of large investment, inability to meet industrial production, and long time consumption, so as to achieve low equipment investment and save Raw material synthesis steps, the effect of reducing production costs

Active Publication Date: 2015-07-29
SHANDONG UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] To sum up, the prior art adopts the method of first synthesizing SiC powder, and then proceeding to crystal growth. The required equipment and additional facilities are expensive and time-consuming, which cannot meet the requirements of industrial production. Therefore, under the premise of ensuring crystal quality, Simplifying the process flow, rapid growth, less investment, and saving time are important tasks in the field of growing large-size single crystals

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  • Method for quickly growing large-size SiC (Silicon Carbide) single crystal
  • Method for quickly growing large-size SiC (Silicon Carbide) single crystal
  • Method for quickly growing large-size SiC (Silicon Carbide) single crystal

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Embodiment 1

[0033] A method for rapidly growing large-size silicon carbide single crystals. The source materials are directly silicon powder and carbon powder. The surface of the silicon powder and carbon powder mixture is covered with a porous graphite sheet. After the powder is synthesized in situ, it is grown by PVT method. Large size SiC single crystal. Specific steps are as follows:

[0034] (1) The silicon powder particle size is 10 μm, and the carbon powder particle size is 10 μm. After the silicon powder and carbon powder are mixed evenly at a molar ratio of 1:1, they are evenly spread on the bottom of the graphite crucible. The holes on the porous graphite sheet placed on the surface of the mixture in the crucible are circular holes and arranged periodically. The thickness of the graphite sheet is 1 mm, the diameter of the circular holes distributed periodically on it is 5 μm, and the space distance is 2 mm, such as Figure 4 shown.

[0035] (2) 6H-SiC single crystal is used ...

Embodiment 2

[0038] A method for rapidly growing a large-size silicon carbide single crystal, the steps are as follows:

[0039] In step (1), the silicon powder and carbon powder are mixed in a molar ratio of 1:1, based on the total weight of the mixed powder of silicon powder and carbon powder, 1% boron carbide solid powder is added, and the particle size is 5 μm , the particle size of silicon powder is 100 μm, and the particle size of carbon powder is 100 μm. Spread the above-mentioned mixture on the bottom of the graphite crucible, place a porous graphite sheet on the surface, the thickness of the porous graphite sheet is 20 mm, and the regular triangle holes with a side length of 90 μm are periodically distributed on it, as Figure 5 shown.

[0040] Step (2) is as described in Example 1, except that the size of the seed crystal is 3 inches, the temperature for synthesizing the SiC source material is between 2000° C., the pressure is controlled at 900 mbar, and the reaction time is 5 h...

Embodiment 3

[0043] A method for rapidly growing large-scale silicon carbide single crystals, as described in Example 2, the difference is that vanadium carbide powder with a particle size of 3 μm is added to the mixed powder of silicon powder and carbon powder, and the total of silicon powder and carbon powder The weight to vanadium carbide powder weight ratio is 500:1, the silicon powder particle size is 50 μm, and the carbon powder particle size is 50 μm. The thickness of the porous graphite sheet is 10 mm, and the side length of the regular triangle hole is 45 μm. The temperature of the synthetic source material was 1800° C., the pressure was controlled at 850 mbar, and the reaction time was 4 hours. The size of the seed crystal is 6 inches, the temperature for growing single crystal is 2400° C., the pressure is 30 mbar, and the growth time is 40 hours. The grown SiC single crystal is semi-insulating and has a diameter of 6 inches.

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Abstract

The invention relates to a method for quickly growing a large-size SiC (Silicon Carbide) single crystal. The method comprises the following steps: putting a mixture of silicon powder and carbon powder at the bottom of a graphite crucible, and placing a porous graphite flake on the surface; fixing a seed crystal to the top of the graphite crucible, vacuumizing a growth chamber, charging Ar gas or mixed gas of Ar and H2 into the growth chamber, heating the seed crystal until the temperature reaches 1,600-2,000 DEG C, and reacting for 2-5 hours under the pressure of 800-900mbar to obtain a SiC source material; raising the temperature to 2,200-2,500 DEG C, continuously charging the Ar gas, reducing the pressure, sublimating powder at the bottom to the surface of the seed crystal, and growing the seed crystal for 30-50 hours to obtain the large-size SiC single crystal. According to the method, SiC powder can be synthesized at one time, the SiC single crystal can be grown in situ, the cost is low, and the process is simple.

Description

technical field [0001] The invention relates to a method for rapidly growing a large-size silicon carbide single crystal, belonging to the field of inorganic non-metallic materials. Background technique [0002] With the maturity of the development of the first-generation silicon semiconductor and the second-generation gallium arsenide semiconductor materials, their device applications are also reaching their limits. Compared with the previous two generations, SiC has obvious advantages. Silicon carbide single crystal has unique characteristics such as large band gap, high breakdown electric field, high thermal conductivity, high electron saturation drift velocity, small dielectric constant, strong radiation resistance, and good chemical stability. Ideal semiconductor materials for optoelectronic devices, high-frequency and high-power devices, and power electronic devices. It is one of the most ideal third-generation semiconductor materials. [0003] At present, the most ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B29/36
Inventor 陈秀芳徐现刚胡小波彭燕
Owner SHANDONG UNIV
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