18 results about "Growth time" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The invention relates to the technical field of disease monitoring, in particular to a disease monitoring method and system in the epimedium growth process, and the method comprises the steps: deploying a multi-source collection device in an epimedium planting area, and obtaining plant images in real time according to a preset time interval, the plant images including RGB images and multispectral images; performing image preprocessing on the acquired RGB image to obtain a standard plant image; acquiring plant growth time, performing morphological analysis on the standard plant image to extract growth characteristic parameters, and inputting the growth characteristic parameters and the growth time into a pre-constructed plant growth stage prediction model to acquire the epimedium growth stage. According to the disease monitoring method for the epimedium growth process provided by the invention, by fusing RGB and multispectral images, accurately extracting key features such as diseased leaves and areas, colors and shapes of the diseased leaves, and inputting a disease prediction model in a growth stage, intelligent discrimination of epimedium disease types and severity levels can be realized.

The present application discloses a growth simulation method, device, electronic device and storage medium for a virtual object, which relates to the field of Internet technology. Character and quality jointly affect the outcome of the virtual object's cultivation. Changes in each parameter will affect the state of the virtual object, thereby improving the strategy and authenticity of the virtual object's growth process, diversifying the cultivation process, enhancing the novelty and fun of the game, improving user stickiness, and avoiding waste of game resources. The method includes: obtaining and executing the object cultivation schedule set by the player for the target virtual object, obtaining the execution result; based on the execution result, updating and displaying the character parameters and quality parameters of the target virtual object; when the growth time of the target virtual object reaches a time threshold, reading multiple character values ​​and multiple quality values; determining the evaluation texts corresponding to the multiple character values ​​and the quality types corresponding to the multiple quality values, and displaying the evaluation texts, quality types and the target virtual object.

The invention discloses a blackberry RubHLH1 gene as well as an expression protein and application thereof, and belongs to the technical field of plant genetic engineering. The nucleotide sequence of the blackberry RubHLH1 gene provided by the invention is as shown in SEQ ID NO. 1, and the amino acid sequence of expressed protein is as shown in SEQ ID NO. 2. The RubHLH1 gene is genetically transformed into arabidopsis thaliana, and a RubHLH transgenic arabidopsis thaliana plant shows a plurality of beneficial characters compared with a wild type plant at the same growth time, including that the stem length is fast and thick, the SPAD value is high, and podding is carried out in advance; wherein stem segments and petiole epithelium spines of the bHLH-3 strain are more than those of a wild type, the leaf surface is more shrunk, and the number of pores is large. The activities of POD, SOD and CAT and the contents of MDA, H2O2, total phenols and flavonoids in a transgenic plant are higher than those in a CK contrast. The invention provides an efficient gene resource and a molecular tool for cultivating excellent transgenic plant varieties by using a molecular breeding means.

The present invention provides a method for cultivating wintersweet small pot plants that can be planted out every year, by using facility cultivation, container planting, semi-underground planting, etc. to extend the annual growth time and accelerate the growth rate; by selecting high-quality rootstocks and improving the grafting and planting methods, etc. to improve the survival rate and quality of small pot plants; by promoting flower branches and compact crowns through topdressing and growth regulator spraying, etc.; by using the technology of planting out, high-quality small pot plants are produced; the whole set of cultivation methods also includes the technical links such as scion selection and treatment, grafting, soil, fertilizer and water management, shaping and pruning, and pest control. Through a series of technical management measures, the annual production technology of wintersweet small pot plants, which are grafted, planted, shaped, and planted out in the same year, is realized. Compared with the prior art, the cultivation method of the present invention has the advantages of simple process, short cultivation cycle, low cost, high yield, good benefit, etc., and has extremely high promotion and application value.

A prediction method and a device for epitaxial layer of beta-Ga2O3 grown by MOCVD. The method includes acquiring preset growth parameters, and inputting the preset growth parameters into a trained epitaxial layer prediction model, the preset growth parameters includes an O / Ga ratio, chamber pressure, temperature, and growth time; outputting predicted data of the beta-Ga2O3 epitaxial layer corresponding to the preset growth parameters by the epitaxial layer prediction model, the predicted data at least includes full width at half maximum difference. In the present disclosure, by combining machine learning with MOCVD process, high-quality two-dimensional step-flow growth with TMGa and O2 as reactants on unintentional oblique substrate is realized, and the quality of beta-Ga2O3 epitaxial layer grown by MOCVD is ensured.

The invention relates to the field of semiconductor growth, and discloses a material growth temperature optimization method, device, equipment, program product and system, and the method comprises the steps: obtaining a preset growth temperature curve of a target material; at the at least one target growth time node, irradiating the target material growing on the substrate by using an electron beam to form a starting point of the defect in the target material; when the growth of the target material is finished, information of the defect corresponding to the target growth time node is obtained, and the information comprises the size and the shape of the defect; based on the information of the defect, the state of the set temperature corresponding to the target growth time node is determined, and the state comprises the high set temperature and the low set temperature; and based on the state, adjusting a set temperature corresponding to the target growth time node until the temperature of the growth surface of the target material on the substrate is stabilized at the target growth temperature. The problems that existing non-contact temperature control measurement is poor in repeatability and surface temperature judgment is not direct enough can be solved.

This invention relates to the field of fungal strain cultivation technology, and particularly to a method for isolating and cultivating fungal strains from matsutake fruiting bodies. The method involves collecting matsutake mushrooms that are 70%–80% mature and free from insects, disinfecting them with alcohol, longitudinally splitting them in half, removing the flesh from the cap and stipe, and inoculating them onto a slant culture medium to obtain a primary strain. This primary strain is then inoculated into a culture medium and shaken to obtain a primary shake flask strain, which is then inoculated into a culture medium. The strain is then shaken and cultured, and the concentration of metabolites, dissolved oxygen, and pH in the culture medium are collected in real time to construct a strain growth time prediction model to predict the stage culture duration. The cell proliferation trend is determined based on the number of matsutake mycelial cells. Based on a comparison of the actual culture time during the initial adjustment period and the stage culture time, the adjustment method for the logarithmic growth phase of the current batch is determined. Based on a comparison of the shake flask culture time and the predicted culture time, the adjustment method for the initial culture conditions of the next batch is determined. This invention effectively optimizes shake flask culture conditions and improves strain quality.

The present application relates to economic crops planting technical field, disclose a kind of selection and breeding method of green pricklyash tree fruiting branch, the method is to select the new shoot of green pricklyash tree in fruit swelling stage as the fruiting branch of next year, and cooperate pruning, fertilization and the multiple action of plant growth regulator composition, stimulate the formation of latent bud, latent bud germination in fruit swelling stage, increase the number of new shoots, promote the growth of new shoots, so as to ensure that the number of new shoots is greater than the required number of fruiting branch, and the length of new shoot aging branch reaches more than 100 centimeters of the demand of high yield.The selection and breeding method provided by the present application selects the new shoot of green pricklyash tree in fruit swelling stage as the fruiting branch of next year, the growth time of new shoot is more than 150 days and the water and heat is sufficient in growth period, compared with the growth time of new shoot in water and heat sufficient area, the growth time is longer, and it is easier to age into flower;And the method is not limited by water and heat conditions, suitable for application and popularization in many areas.

The utility model discloses a fruit tree branch growth correcting device, and relates to the technical field of agriculture. The fruit tree branch growth correcting device comprises two fixing units which are hinged to each other, and an adjustable elastic correcting piece is installed between the two fixing units. The adjustable elastic force correcting piece comprises a sleeve and a top shaft movably inserted into one end of the sleeve, a correcting spring is arranged in the sleeve, a sliding seat is arranged at the end, opposite to the top shaft, of the sleeve, and the sliding seat slides on the fixing unit. According to the fruit tree branch growth correcting device, the two attaching strips are bound to the two ends of the bent portion of a fruit tree branch through the binding pieces, the adjusting lead screw is rotated, the correcting spring is compressed, under the elastic force effect of the correcting spring, the branch always has the growth correcting trend opposite to the bending direction within the backward growth time, and therefore the branch growth correcting effect is improved. Therefore, the branches are assisted to be corrected for a long time, branch breakage caused by one-time straightening is avoided, and meanwhile multiple times of adjustment in the correction period is not needed.

The present application relates to the technical field of flower phenotype analysis, and particularly relates to a field fresh flower intelligent grading and labeling method and system, three-dimensional images are generated by fusing two-dimensional and depth images collected synchronously, a shape contour is extracted through an instance segmentation network, a crown, a stem and a leaf feature map are segmented and output, and corresponding shape, size and appearance parameters are calculated, then a spatial offset of a crown barycenter and a stem axis is calculated, and the spatial offset is combined with the aforementioned parameters to construct a comprehensive growth feature vector, then a current quality grade is determined based on weighted summation of breed evaluation weights, meanwhile, the vector is combined with a historical sequence to fit a growth trajectory, a dynamic growth evolution model is constructed, and a remaining growth time is obtained, finally, the quality grade and the remaining time are encoded, and are mapped to a perspective projection position corresponding to a two-dimensional image to generate a grading and labeling image. The present application combines static calculation with dynamic deduction, and realizes visual and intuitive labeling of fresh flower states.

The application discloses a sugarcane uniform seedling control tillering high-yield and high-sugar planting method, and at least comprises the following steps: seed stalk preparation and cutting, uniform seedling cultivation, tillering quantity control, seedling hardening and transplanting. The method can reduce the seed stalk input, improve the uniformity of sugarcane seedlings, realize quantitative density planting, avoid the uneven emergence leading to the lack of pond and broken ridge, reduce the carried pathogen source, reduce the field pesticide input, reduce the long sugarcane field growth period, increase the sugarcane growth time, and increase the sugarcane yield and sugar content.

This invention discloses a culture medium for the rapid propagation of sweet potato test-tube seedlings, comprising the following components: MS + 0.2-0.4 mg / L 6-BA + 0.05-0.15 mg / L NAA + 0.1-0.3 mg / L IAA + 0.02-0.04 mg / L LPP333 + 0.7-0.9 g / L KNO3 + 0.21-0.23 g / L MgSO4 + 0.43-0.45 g / L CaCl2. The preparation method specifically includes the following steps: (1) preparation of plant hormones and salts; (2) melting agar; (3) adding mother liquor; (4) adjusting pH; (5) dispensing; and (6) autoclaving. This invention, by optimizing the culture medium components, shortens the growth time of sweet potato test-tube seedlings, increases the propagation coefficient of sweet potato test-tube seedlings, and reduces the production cost of tissue culture, thus achieving the goal of cost reduction and efficiency improvement in the sweet potato virus-free seedling propagation technology system.

The invention relates to the technical field of fresh cut flower cultivation, and provides a method for promoting growth of axillary buds of cut-flower roses by applying nitrogen and phosphorus elements with proper concentrations, and a fertilizer with the nitrogen element concentration of 6.0-10.5 mmol / L and the phosphorus element concentration of 0.62-1.22 mmol / L is applied after the cut-flower roses are pruned. According to the method for promoting the growth of the axillary buds of the cut-flower roses, by applying nitrogen and phosphorus elements with proper concentrations, on one hand, dormancy of the axillary buds of the cut-flower roses is relieved in advance, the axillary buds start to rapidly grow under the proper nitrogen and phosphorus element concentrations, and the growth cycle of the cut-flower roses is shortened; on the other hand, the height of the plants is increased within the same growth time, and then the quality of the cut-flower roses is improved.

This application relates to the field of materials growth and discloses an epitaxial layer and a method for controlling its growth. The method includes: growing a gallium oxide film on the surface of a substrate and acquiring a reflective high-energy electron diffraction (HEED) image of the gallium oxide film in real time; determining the HEED intensity based on the HEED image and determining the relationship between the HEED intensity and the growth time of the gallium oxide film; comparing the relationship with a standard relationship between the HEED intensity and growth time during gallium oxide monolayer growth to determine the growth mode of the gallium oxide film. The method of this application does not rely on human experience for judgment and can accurately determine whether the gallium oxide film is grown as a monolayer, thus obtaining a gallium oxide film grown as a monolayer.

This invention discloses a five-model growth calculation method and ecological restoration system for an ecosystem based on a unified photothermal-electric energy system, relating to the field of ecological restoration technology. The system comprises five sequentially connected and mutually coupled sub-models: a gene intrinsic layer sub-model for detecting the photothermal conductivity, absorbed heat energy, and growth time of plant genes, and calculating the growth volume of a single plant; a temporal dynamic layer sub-model for real-time detection of environmental photothermal supply, combined with phenological rhythm coefficients to calculate real-time growth potential; a vertical structure layer sub-model for detecting the growth potential and trophic level transfer efficiency of each layer of the community, and calculating the community structure efficiency; a holographic energy balance layer sub-model for detecting the total solar heat energy input and performing energy conservation balance verification; and a steady-state determination layer sub-model for calculating the ecological restoration steady-state index and determining the completion of ecological restoration when a preset threshold is reached. This invention achieves precise restoration and quantifiable determination of ecosystems, applicable to the ecological restoration of forests, wetlands, deserts, grasslands, etc.

The present application relates to the technical field of disease monitoring, and particularly relates to a disease monitoring method and system for growth process of Epimedium brevicornum, which comprises deploying multi-source acquisition equipment in the Epimedium brevicornum planting area, acquiring plant images in real time at preset time intervals, wherein the plant images comprise RGB images and multispectral images; performing image preprocessing on the acquired RGB images to obtain standard plant images; acquiring plant growth time, performing morphological analysis on the standard plant images to extract growth characteristic parameters, inputting the growth characteristic parameters and the growth time into a pre-constructed plant growth stage prediction model to obtain the growth stage of Epimedium brevicornum. The disease monitoring method for growth process of Epimedium brevicornum provided by the present application can accurately extract key features such as disease leaves, area, color and shape by fusing RGB and multispectral images, and can realize intelligent discrimination of disease types and severity grades of Epimedium brevicornum by combining the growth stage with the disease prediction model.

To provide a prediction method and a device for epitaxial layer of β-Ga2O3 grown by MOCVD.SOLUTION: The method includes acquiring preset growth parameters, and inputting the preset growth parameters into a trained epitaxial layer prediction model, the preset growth parameters include an O / Ga ratio, chamber pressure, temperature, and growth time; outputting predicted data of the β-Ga2O3 epitaxial layer corresponding to the preset growth parameters by the epitaxial layer prediction model. In the present disclosure, the machine learning model is used to predict the epitaxial layer and the preset growth parameters are adjusted according to the predicted data to select the growth parameters suitable for the process window of β-Ga2O3 epitaxial growth, and then the generated parameters are input into MOCVD for epitaxy, and the quality of β-Ga2O3 epitaxial layer grown by MOCVD is improved.SELECTED DRAWING: Figure 1