Large monocrystal graphene and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- PEKING UNIV
- Publication Date
- 2015-05-27
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Abstract
Description
Technical field
[0001] The invention belongs to the field of graphene preparation, and specifically relates to a large single crystal graphene and a preparation method thereof. Background technique
[0002] Graphene is a honeycomb-shaped two-dimensional atomic crystal composed of a single layer of carbon atoms closely arranged. Because of its excellent optical, electrical and mechanical properties, it has received extensive attention since its discovery. However, how to apply it to practical applications, the key lies in the need for efficient preparation methods. At present, a variety of graphene preparation methods have emerged, such as mechanical exfoliation, liquid exfoliation, graphene oxide reduction, silicon carbide epitaxy, chemical vapor deposition, and segregation growth. Among them, the chemical vapor deposition method has become one of the mainstream methods for preparing graphene due to its advantages of large area, high quality, regular shape, easy transfer, contr...