12 results about "Homojunction" patented technology

The invention provides a transistor with a programmable horizontal double-floating-gate homojunction. The transistor comprises two floating gate layers which are independent from each other and are composed of multiple layers of graphene; the tunneling layer is positioned above the floating gate layer; the channel layer is positioned above the tunneling layer; the source electrode and the drain electrode are located above the two ends of the channel layer respectively, so that the floating gate layer can achieve regulation and control of source-drain contact, and then it is guaranteed that a floating gate electric field can achieve regulation and control of Schottky barriers of the source electrode and the drain electrode; and the two direct tunneling electrodes are respectively positioned above two ends of the tunneling layer and are not in contact with the channel layer, so as to inject charges into the floating gate layer. The invention also provides a preparation method of the transistor. According to the transistor provided by the invention, a bilateral floating gate is used for regulating and controlling an energy band in contact with two sides, and any one of four junctions (a p-n junction, an n-p junction, a p-p junction and an n-n junction) can be freely formed and switched.

This invention provides a charge-trapping type two-dimensional horizontal homojunction rectifier and its fabrication method, relating to the field of semiconductor electronics technology. It enables p-doping and n-doping of bipolar two-dimensional tungsten diselenide using graphodyne and a silicon dioxide insulating layer under a positive gate electric field. The resulting p-n junction achieves a large rectification ratio and stable rectification performance. This rectifier simultaneously performs n-type and p-type doping on the two-dimensional tungsten diselenide, forming a p-n homojunction in the horizontal direction. This allows the output current to exhibit high and low levels depending on the polarity of the input drain-source voltage, thus achieving the rectifier function. The rectifier achieves p-type and n-type doping under the influence of a positive gate electric field applied by the silicon gate electrode, through simultaneous contact between a portion of the two-dimensional tungsten diselenide with the graphodyne film and the silicon dioxide insulating layer, forming a homojunction. The technical solution provided by this invention is applicable to the rectification process.

This invention discloses a carbon nitride homojunction photocatalyst for the selective conversion of methane to ethanol, its preparation method, and its application, belonging to the field of photocatalysis. The carbon nitride homojunction photocatalyst for the selective conversion of methane to ethanol is made of carbon nitride semiconductor CNC. I Axially oxygen-coordinated copper single-atom co-catalyst and carbon nitride semiconductor CN II Composition. Based on carbon nitride semiconductor CN. I The first semiconductor is formed by supramolecular assembly and thermal polymerization, on which an axially oxygen-coordinated copper single-atom co-catalyst and a second semiconductor CN are simultaneously introduced. II The carbon nitride homojunction photocatalyst for the selective conversion of methane to ethanol, denoted as Cu-CN, was prepared. II / CN I The catalyst used in this invention is made from abundant and inexpensive raw materials, and its preparation route is simple. The prepared catalyst significantly promotes the separation of charge carriers and exhibits excellent catalytic performance in the photocatalytic conversion of methane to ethanol, showing broad application prospects.

The present disclosure provides a two-dimensional homojunction photodiode, an optical logic computing device, a method and a system. The two-dimensional homojunction photodiode comprises: a substrate for supporting a layer; a device channel layer disposed on the substrate, the device channel layer comprising a two-dimensional homojunction of an intrinsic two-dimensional material layer and a strained two-dimensional material layer extending along a direction parallel to the surface of the substrate; wherein the device channel layer is configured to adjust at least one of the strain direction and the strain size to regulate the light response characteristics of the two-dimensional homojunction photodiode, and to adjust the length ratio of the strained two-dimensional material layer in the device channel layer to build an asymmetric device channel layer to regulate the polarization sensitivity characteristics of the photodiode. A source and a drain are respectively disposed at both ends of the device channel layer.

The application discloses a flexible boron nitride homojunction pn and a preparation method, wherein a sulfur-doped n-type boron nitride film is grown on a sapphire substrate through a low-pressure chemical vapor deposition technology; a magnesium-doped p-type boron nitride film is grown on a copper substrate through a low-pressure chemical vapor deposition technology; the sulfur-doped n-type boron nitride film and the magnesium-doped p-type boron nitride film are transferred to a flexible substrate through a polymethyl methacrylate assisted liquid phase exfoliation technology, and heat treatment is conducted in an argon atmosphere to obtain a flexible boron nitride homojunction pn. The application realizes efficient n-type and p-type doping of the boron nitride film, and prepares a boron nitride-based homojunction pn on the flexible substrate through a large-area film exfoliation and transfer technology. The homojunction structure has high lattice matching degree and low junction formation energy, further develops the preparation and research of van der Waals homojunctions in the field of ultrawide bandgap materials, and has great application prospect in the fields of optoelectronic devices and high-power power electronic devices.

This application relates to the field of semiconductor integrated circuit manufacturing technology, specifically to an SOI-LDMOS device and its fabrication method. The SOI-LDMOS device includes: a substrate layer, a buried oxide layer, and an epitaxial layer stacked sequentially from bottom to top; a drift region is formed in the epitaxial layer; a source region and a drain region are formed on both sides of the drift region; a doped polysilicon field plate is formed on the drift region, and a vertical heterojunction is formed between the doped polysilicon field plate and the drift region. When the device is in the off state, the vertical heterojunction is depleted; one end of the doped polysilicon field plate contacts and overlaps with the source region to form a vertical homojunction; the other end of the doped polysilicon field plate is doped with a first conductivity type impurity to form a first conductivity type doped region; the main body of the doped polysilicon field plate forms a lateral heterojunction with the first conductivity type doped region; the doped polysilicon field plate contacts the metal electrode of the drain region through the heterojunction. The fabrication method is used to fabricate the above-mentioned SOI-LDMOS device.

The application discloses a method for preparing a non-uniform stress homojunction film, which comprises the following steps: (1) forming a sacrificial layer on an initial substrate to obtain a sacrificial layer / initial substrate structure; (2) forming a self-supporting film on the sacrificial layer to obtain a self-supporting film / sacrificial layer / initial substrate structure; (3) placing the self-supporting film / sacrificial layer / initial substrate structure in a solution capable of dissolving the sacrificial layer until the sacrificial layer is completely dissolved, so that the self-supporting film is separated from the initial substrate to obtain the self-supporting film; (4) transferring the self-supporting film onto a target substrate in a manner of not completely covering the target substrate to obtain a self-supporting film / target substrate structure which does not completely cover the target substrate; and (5) forming a target film on the self-supporting film / target substrate structure; the self-supporting film and the target substrate are different materials with different lattice constants. The method is flexible, simple and can be used to obtain the non-uniform stress homojunction film in a universal manner.

The invention belongs to the technical field of photocatalysis, and particularly relates to a graphite-phase carbon nitride photocatalyst based on a nitrogen-defect sulfur-doped coupled S-type homojunction as well as a preparation method and application of the graphite-phase carbon nitride photocatalyst. N-defect g-C3N4 (NA-DCN) and S-doped g-C3N4 (NA-SCN) are respectively constructed through nitric acid assisted treatment, and directed migration of photon-generated carriers is realized by using an S-type homojunction interface so as to inhibit recombination; stable interface bonding is formed through component proportion optimization, and the specific surface area and the number of active sites of the material are synchronously increased. Finally, through multi-dimensional structure regulation and control, the problems that the g-C3N4 is limited in photoresponse range, fast in carrier recombination and difficult in consideration of catalytic activity and stability are synchronously solved, the photocatalytic hydrogen production performance of the g-C3N4 is remarkably enhanced, and a reliable technical scheme is provided for large-scale application of an efficient carbon nitride-based photocatalytic material.

The application relates to the technical field of semiconductor devices, in particular to a full-transparent tin oxide-based varactor diode and a preparation method thereof, which comprises a substrate layer, an n-type tin oxide layer, a p-type tin oxide layer, a negative electrode, a positive electrode and a protective medium layer; wherein the negative electrode, the n-type tin oxide layer, the p-type tin oxide layer and the positive electrode are sequentially connected and arranged on the substrate layer and form a concentric circle structure; and the protective medium layer wraps the concentric circle structure and exposes part of the negative electrode and part of the positive electrode. The application constructs a pn junction based on the bipolar conductivity characteristics of a tin oxide-based material, provides a full-transparent tin oxide-based varactor diode, is compatible with heterojunction and homojunction designs, and meets different application requirements; and can be applied to the fields of transparent radio frequency circuits, tunable optical devices, optical communication systems, intelligent windows and wearable electronic devices.

The application belongs to the technical field of semiconductor devices, and particularly relates to a van der Waals homojunction microspectrometer based on material thickness gradient change, which comprises a Si substrate, a SiO2 substrate, a gate, a BN substrate, a source, a drain, and a van der Waals homojunction. The SiO2 substrate is arranged at the top end of the Si substrate, the gate is arranged at the top end of the SiO2 substrate, and the BN substrate is arranged at the top end of the gate. The van der Waals homojunction is arranged at the top end of the BN substrate, and the thickness of the van der Waals homojunction changes from thick to thin in a gradient manner from one side to the other side. The source is arranged at the thicker side of the van der Waals homojunction, and the drain is arranged at the thinner side of the van der Waals homojunction. By controlling the thickness change of the homojunction, the energy band structure of the homojunction can be effectively regulated, and the efficient separation and transmission of interlayer carriers can be induced. In combination with an optimized spectrum reconstruction algorithm, high-dimensional photoelectric response data collected based on the homojunction can be quickly analyzed, and high-precision reconstruction of incident spectrum can be realized.

The application discloses a kind of double-layer nano array materials and preparation method thereof, it is related to nanometer material technical field, the double-layer nano array material includes conductive glass, and nano rod array material and nanotube array material are sequentially arranged on the conductive glass.Nano rod array material and nanotube array material sequentially arranged on the conductive glass can be double-layer array homojunction material or double-layer array heterojunction material, this design can utilize one-dimensional nano array structure to provide high-speed channel for the transmission of photo-generated carriers on the one hand, on the other hand, compared with single-layer nano rod array, the double-layer array homojunction material also has the advantages of large specific surface area, high light absorption efficiency, etc., can greatly change and enhance the inherent photoelectrochemical activity and performance of material itself.