96 results about "Homojunction" patented technology

The invention discloses an oxide semiconductor plane p / n superstructure and a preparation method thereof. According to the method, a latticed mask is formed on the surface of an oxide thin film based on a photoetching process, O2 atmosphere annealing (100-300 DEG C, 15-40 min) is combined, the local oxygen vacancy concentration of a mask covering area and an exposed area is precisely regulated and controlled, and precise in-situ conversion of a p type (oxygen-rich area) and an n type (oxygen-poor area) in a homogeneous material is achieved. The planar p / n superstructure breaks through the strict limitation of a traditional vertical multi-junction structure on material doping and interface quality, the width of a depletion region is expanded to the micron order through the p / n homojunction arrays alternately distributed in the plane, and the bulk recombination effect of photon-generated carriers is remarkably inhibited. According to the method, an innovative technical route of photoetching-assisted in-situ construction of the planar multi-junction photoelectrode is created, the method has the advantages of interface atomic-scale lattice matching, simple process, high compatibility, accurate and controllable space charge distribution and the like, and a technical foundation is laid for non-assisted solar water decomposition, research and development of self-driven optoelectronic devices and the like.

The invention discloses a perovskite homojunction solar cell and an in-situ preparation method thereof. The perovskite homojunction solar cell comprises a transparent conductive substrate, an electron transport layer, a perovskite light absorption layer, a hole transport layer and an electrode which are sequentially arranged from bottom to top, according to the perovskite light absorption layer, doping agents are introduced in situ in the preparation process of the perovskite light absorption layer through an improved multi-step spin-coating method, control over spatial distribution of the doping agents in the perovskite light absorption layer is achieved, and the perovskite homojunction light absorption layer with adjustable properties is prepared; the perovskite light absorption layer adopts a homojunction structure, and a homojunction built-in electric field is utilized to enhance separation and transmission driving force of electrons and holes in the perovskite light absorption layer and inhibit recombination of the electrons and the holes. According to the invention, in-situ controllable preparation of the perovskite homojunction by the solution method is realized.

The invention relates to the technical field of catalyst preparation, in particular to a homojunction photocatalyst as well as a preparation method and application thereof.The cyano and nitrogen defect co-modified C3N4 / C3N5 homojunction photocatalyst is constructed through simple mixing, grinding and thermal polymerization, and the C3N4 / C3N5 homojunction photocatalyst shows excellent catalytic performance in the aspect of photocatalytic production of H2O2 and has a good application prospect. The industrialization requirement of photocatalytic synthesis of H2O2 is expected to be met. The C3N4 / C3N5 homojunction photocatalyst containing the nitrogen defect and the cyano group provided by the invention has the advantages of simple preparation method, low raw material price, high stability and high hydrogen peroxide synthesis efficiency.

The invention provides a transistor with a programmable horizontal double-floating-gate homojunction. The transistor comprises two floating gate layers which are independent from each other and are composed of multiple layers of graphene; the tunneling layer is positioned above the floating gate layer; the channel layer is positioned above the tunneling layer; the source electrode and the drain electrode are located above the two ends of the channel layer respectively, so that the floating gate layer can achieve regulation and control of source-drain contact, and then it is guaranteed that a floating gate electric field can achieve regulation and control of Schottky barriers of the source electrode and the drain electrode; and the two direct tunneling electrodes are respectively positioned above two ends of the tunneling layer and are not in contact with the channel layer, so as to inject charges into the floating gate layer. The invention also provides a preparation method of the transistor. According to the transistor provided by the invention, a bilateral floating gate is used for regulating and controlling an energy band in contact with two sides, and any one of four junctions (a p-n junction, an n-p junction, a p-p junction and an n-n junction) can be freely formed and switched.

This invention provides a charge-trapping type two-dimensional horizontal homojunction rectifier and its fabrication method, relating to the field of semiconductor electronics technology. It enables p-doping and n-doping of bipolar two-dimensional tungsten diselenide using graphodyne and a silicon dioxide insulating layer under a positive gate electric field. The resulting p-n junction achieves a large rectification ratio and stable rectification performance. This rectifier simultaneously performs n-type and p-type doping on the two-dimensional tungsten diselenide, forming a p-n homojunction in the horizontal direction. This allows the output current to exhibit high and low levels depending on the polarity of the input drain-source voltage, thus achieving the rectifier function. The rectifier achieves p-type and n-type doping under the influence of a positive gate electric field applied by the silicon gate electrode, through simultaneous contact between a portion of the two-dimensional tungsten diselenide with the graphodyne film and the silicon dioxide insulating layer, forming a homojunction. The technical solution provided by this invention is applicable to the rectification process.

The invention belongs to the technical field of micro-nano semiconductor electronic devices, and discloses a reconfigurable field effect transistor based on different-surface contact electrodes and a preparation method of the reconfigurable field effect transistor. The transistor comprises a SiO2 / Si substrate, an hBN passivation layer, a source / drain Au electrode, a MoTe2 channel, an hBN dielectric layer, a graphene gate and a top gate Au electrode from bottom to top, the source electrode, the drain electrode and the channel form different-surface contact, and an air cavity is formed between the channel and the dielectric layer. The air cavity causes the top gate electric field to generate asymmetric regulation and control on the channel, so that one end of the channel is kept in an eigenstate, and the other end of the channel is regulated and controlled by the gate voltage to form an n-type or p-type region, thereby forming an ni or pi homojunction in the single channel, and realizing reconfigurable carrier transport polarity. The invention further provides a preparation method based on dry transfer, the process is simple, and the preparation method is suitable for a reconfigurable logic circuit and a nano electronic system.

The invention discloses an electrical counter based on a super-smooth homojunction interface and a counting method, and relates to the technical field of micro-nano electromechanical systems (MEMS / NEMS). Comprising a base part, a rotatable part, a first layered material layer, a second layered material layer and a measuring and processing system, and the rotatable part can rotate relative to the base part; the measuring and processing system is electrically connected to the first layer of layered material and the second layer of layered material and is configured to: monitor a change in a resistance value across the homojunction interface during the rotational motion; identifying a characteristic reduction of the resistance value; outputting a count signal based on the identification of the characterization reduction; the beneficial effects of the invention are that the scheme utilizes the intrinsic physical effect of the lattice of the layered material at a specific rotation angle to realize a novel counting sensing mechanism which is high in precision, high in signal-to-noise ratio and extremely easy to miniaturize.

The invention relates to the field of photoelectric energy materials, in particular to a Cu2O p-n homojunction composite photocatalytic nitrogen fixation material, a preparation method and application, the method comprises the following steps: adding Pr (NO3) 3 and n-type I-Cu2O into a Cu2O reaction solution or adding KI and p-type Pr-Cu2O into the Cu2O reaction solution, and carrying out hydrothermal reaction to obtain the Cu2O p-n homojunction composite photocatalytic nitrogen fixation material. According to the method, a Cu2O p-n homojunction composite structure is constructed, a built-in electric field formed by p-type and n-type semiconductor interfaces is utilized, separation of photo-generated electrons and holes is accelerated, photo-generated carrier recombination is effectively inhibited, the stability and catalytic efficiency of the material are improved, and the problems of low catalytic activity and poor stability when Cu2O is used as a catalyst for synthesizing ammonia through light nitrogen fixation are solved.

The invention relates to a chiral perovskite semiconductor circular polarization luminescence enhancement structure and a preparation method and application thereof, and belongs to the technical field of chiral photoelectric semiconductor materials and micro-nano devices. According to the structure, two layers of chiral perovskite semiconductor nanosheets are stacked through a controllable torsion angle to form a homojunction, and the torsion angle ranges from 0 degree to 90 degrees. According to the present invention, by adjusting the interlayer torsion angle, the continuous regulation and the significant enhancement of the circular polarization light emitting polarization degree are achieved, and especially during the parallel stacking (0 degree torsion angle), the circular polarization light emitting polarization degree is improved by 3 times compared with the single nanosheet and the vertical stacking (90 degree torsion angle). The enhancement effect is derived from inter-layer coupling dependent on a torsion angle, spin selective charge transfer is promoted, exciton binding energy is enhanced, and electron-phonon scattering is inhibited. The invention provides an effective way for regulating and controlling the polarization degree through the torsion angle, and is suitable for the fields of circular polarization luminescent devices, spin optoelectronic devices, quantum information processing and the like.

The application discloses a chip, a preparation method and an electronic device. At least one channel structure, a gate, a gate oxide layer and a source-drain electrode layer are arranged on a substrate. The source and the drain of a transistor are formed by the source-drain electrode layer. The gate oxide layer realizes isolation between the gate and the channel region of the channel layer. The gate surrounds the channel region of the channel layer, and realizes that the gate structure wraps the channel. The sacrificial layer around the channel region is removed, the sacrificial layer in the remaining area is reserved, and the content of the doped ions in the sacrificial layer is not more than 5%. The doped semiconductor material in the sacrificial layer and the undoped semiconductor material in the channel layer can be regarded as different doping concentrations of the same semiconductor material, a homojunction can be formed between the adjacent sacrificial layer and the channel layer, the stress between the adjacent channel layer and the sacrificial layer is reduced, and the possibility of dislocation and warping is reduced.

The invention belongs to the technical field of pulse characteristic measurement, and relates to an on-chip integrated single autocorrelator and a measurement method thereof. The autocorrelator comprises an SOI substrate, a photonic crystal waveguide is formed on the SOI substrate through etching, and an insulating layer, an indium selenide layer and a chromium gold electrode array are sequentially arranged on the photonic crystal waveguide; the photonic crystal waveguide is composed of a straight waveguide area in the middle area and photonic crystal areas on the two sides. The chromium-gold electrode array is composed of a plurality of pairs of chromium-gold electrodes which are arranged at equal intervals in the photonic crystal waveguide direction, and each pair of chromium-gold electrodes serve as a source electrode and a drain electrode respectively; a back gate electrode is arranged on an unetched region of the SOI substrate; during measurement, a p-i-n homojunction is formed in the indium selenide material; the source electrode is connected with the p-type region of the indium selenide layer, the drain electrode is connected with the n-type region of the indium selenide layer, and the indium selenide p-i-n homojunction photoelectric detector is formed by the source electrode and the drain electrode. The problem that an existing autocorrelator is difficult to integrate and cannot meet actual requirements is solved.

The application discloses a homojunction organic electroluminescent diode and a preparation method and application thereof. The composition of the homojunction organic electroluminescent diode comprises a substrate, a bottom electrode, a first light-emitting unit, a charge generation layer, a second light-emitting unit and a top electrode which are sequentially arranged in layers, the composition of the first light-emitting unit comprises an electron injection layer, a first electron transport layer and a first light-emitting layer, the composition of the charge generation layer comprises a hole transport layer, a first hole injection layer, a metal layer and a second electron transport layer, the composition of the second light-emitting unit comprises a second light-emitting layer and a second hole injection layer, and the host materials of the first electron transport layer, the first light-emitting layer, the hole transport layer, the second electron transport layer and the second light-emitting layer are the same. The homojunction organic electroluminescent diode has the advantages of high luminous brightness, high efficiency, high stability, wide applicable types of preparation materials and the like, and can be used as an excitation light source of an organic solid laser diode.

The invention discloses a high-sensitivity biosensor for enhancing photoelectric response based on multi-exciton effect, which is of a layered stacking structure along the vertical direction and sequentially comprises an ITO (indium tin oxide) conductive glass substrate, an HQ-CdS hierarchical quantum structure homojunction photoelectrode and a 5-HT aptamer modification layer from bottom to top, wherein the HQ-CdS photoelectrode is composed of a B-CdS film and an in-situ grown C-modified CdS two-dimensional nanosheet and forms a homojunction structure, the preparation method of the sensor comprises the steps of preparing the B-CdS photoelectrode through chemical bath deposition and annealing treatment, constructing the HQ-CdS photoelectrode through in-situ photoelectrochemical treatment, and then completing sensor assembly through aptamer fixation and target molecule combination. According to the invention, the multi-exciton effect is used as a core signal amplification strategy, and the problem of insufficient resolution of the existing PEC aptamer sensor is solved.

This invention discloses a carbon nitride homojunction photocatalyst for the selective conversion of methane to ethanol, its preparation method, and its application, belonging to the field of photocatalysis. The carbon nitride homojunction photocatalyst for the selective conversion of methane to ethanol is made of carbon nitride semiconductor CNC. I Axially oxygen-coordinated copper single-atom co-catalyst and carbon nitride semiconductor CN II Composition. Based on carbon nitride semiconductor CN. I The first semiconductor is formed by supramolecular assembly and thermal polymerization, on which an axially oxygen-coordinated copper single-atom co-catalyst and a second semiconductor CN are simultaneously introduced. II The carbon nitride homojunction photocatalyst for the selective conversion of methane to ethanol, denoted as Cu-CN, was prepared. II / CN I The catalyst used in this invention is made from abundant and inexpensive raw materials, and its preparation route is simple. The prepared catalyst significantly promotes the separation of charge carriers and exhibits excellent catalytic performance in the photocatalytic conversion of methane to ethanol, showing broad application prospects.

The invention discloses a halide semiconductor n-p homojunction and a preparation method and application thereof, and the preparation method comprises the steps: introducing trichloro [3-(pentafluorophenyl) propyl] silane (TPFS for short) to the surface of a halide semiconductor through a solution method, and constructing the halide semiconductor n-p homojunction. The trichloro [3-(pentafluorophenyl) propyl] silane can greatly improve the work function of the surface of a halide semiconductor, so that the surface of the halide semiconductor is converted from an n type to a p type, hole extraction is facilitated, electrons are blocked, and interface recombination is inhibited. In addition, trichloro [3-(pentafluorophenyl) propyl] silane can passivate defects on the surface of a halide semiconductor and enhance the stability of a halide semiconductor film. The process is simple, the cost is low, and large-area preparation and commercial application of halide semiconductor photoelectric devices are facilitated.

The present disclosure provides a two-dimensional homojunction photodiode, an optical logic computing device, a method and a system. The two-dimensional homojunction photodiode comprises: a substrate for supporting a layer; a device channel layer disposed on the substrate, the device channel layer comprising a two-dimensional homojunction of an intrinsic two-dimensional material layer and a strained two-dimensional material layer extending along a direction parallel to the surface of the substrate; wherein the device channel layer is configured to adjust at least one of the strain direction and the strain size to regulate the light response characteristics of the two-dimensional homojunction photodiode, and to adjust the length ratio of the strained two-dimensional material layer in the device channel layer to build an asymmetric device channel layer to regulate the polarization sensitivity characteristics of the photodiode. A source and a drain are respectively disposed at both ends of the device channel layer.

This invention relates to a lateral homo-heterojunction memory device and its fabrication method. The memory device includes a substrate gate layer, a first dielectric layer, a second dielectric layer, a two-dimensional semiconductor channel layer, and ohmic electrodes. The first and second dielectric layers are both located on the substrate gate layer and are in contact with each other. The two-dimensional semiconductor channel layer is located on the first and second dielectric layers. The ohmic electrodes are located at both ends of the two-dimensional semiconductor channel layer. This memory device uses a composite dielectric layer to perform dielectric modulation and electrostatic gate modulation on the two-dimensional semiconductor channel layer, thereby forming a lateral heterojunction in a homogeneous material. The cross-section of the formed lateral heterojunction is located at the junction of the first and second dielectric layers, and the interface of the formed lateral heterojunction consists of only one line, reducing defects at the interface. Furthermore, since the heterojunction is formed using the same material, there is no lattice mismatch problem between different materials, thus improving the electrical performance of the memory.

The application discloses a high-response optoelectronic homojunction field effect device with adjustable gate, a preparation method thereof and an optoelectronic response control method. The device comprises a substrate, a metal gate layer and an insulating layer arranged on the surface of the substrate, the insulating layer partially covers the metal gate layer, a channel layer is arranged on the surface of the insulating layer, and a source electrode and a drain electrode are arranged on the surface of the channel layer at intervals; the channel layer is made of a material with bipolar field effect characteristics; the channel layer is adjusted to be in an n ‑ -p or n ‑ -n homojunction state by adjusting the voltage of the metal gate layer. The preparation method comprises the following steps: evaporating the metal gate layer on the substrate; arranging the insulating layer on the metal gate layer and the substrate by a polyvinyl alcohol dry transfer method; arranging the channel layer on the surface of the insulating layer by the polyvinyl alcohol dry transfer method; and evaporating the source electrode and the drain electrode on the channel layer. The device obtained by the application can realize the reconfigurable n ‑ -p or n ‑ -n homojunction state, the maximum optical response is 1.0 A / W, and high-sensitivity detection can be realized.

The invention discloses a homojunction avalanche photodetector based on a silicon substrate and a preparation method of the homojunction avalanche photodetector, and belongs to the technical field of photodetectors. The homojunction avalanche photodetector sequentially comprises a substrate layer, a gate electrode, an insulating layer, a homojunction thin film layer, a protective layer, a source electrode and a drain electrode from bottom to top, the homojunction thin film layer comprises a first thin film layer, a second thin film layer and a third thin film layer which are all located above the insulating layer, the source electrode and the drain electrode are located above the first thin film layer and the third thin film layer respectively, and the gate electrode is connected with the insulating layer. The homojunction avalanche photodetector has the advantages of being simple in structure, low in threshold voltage, high in avalanche gain, high in electric field regulation and control performance and excellent in stability.

The invention belongs to the technical field of photoelectric materials, and particularly relates to a multiphase multistage WO3 homojunction photoanode and a preparation method and application thereof. The preparation method of the photo-anode comprises the following steps: preparing a precursor solution by taking sodium tungstate as a raw material, hydrochloric acid as an acid source and ammonium oxalate as a dispersing agent; placing the pretreated conductive glass in a reaction kettle, adding the precursor solution, and carrying out a hydrothermal reaction to obtain conductive glass deposited with yellow tungstic acid; and cleaning, drying and annealing the yellow tungstic acid deposited conductive glass to obtain the yellow tungstic acid deposited conductive glass. The multiphase multistage WO3 homojunction photoanode prepared by the invention can promote the separation of photon-generated carriers, so that the photoelectrocatalysis efficiency is improved.

This invention discloses an N-P homojunction all-inorganic perovskite solar cell for indoor photovoltaic applications. This invention provides a method to overcome the efficiency limit of indoor photovoltaics. By treating the interface of an all-inorganic perovskite (CsPbI3) thin film with a surface-modified material (sodium dodecyl sulfate: SDS), a CsPbI3 perovskite thin film with an N-P homojunction is prepared in a glove box. The formation of PbS on the surface is observed using scanning electron microscopy (SEM), and the formation of the N-P homojunction is verified using atomic force microscopy (KPFM). The formation of the N-P homojunction on the CsPbI3 thin film surface solves the bandgap matching problem between the CsPbI3 perovskite thin film and the charge transport layer. Most importantly, J sc Significant improvements have been made, which enhances the performance of all-inorganic perovskite indoor photovoltaics. sc This provides an effective strategy.

The application discloses a flexible boron nitride homojunction pn and a preparation method, wherein a sulfur-doped n-type boron nitride film is grown on a sapphire substrate through a low-pressure chemical vapor deposition technology; a magnesium-doped p-type boron nitride film is grown on a copper substrate through a low-pressure chemical vapor deposition technology; the sulfur-doped n-type boron nitride film and the magnesium-doped p-type boron nitride film are transferred to a flexible substrate through a polymethyl methacrylate assisted liquid phase exfoliation technology, and heat treatment is conducted in an argon atmosphere to obtain a flexible boron nitride homojunction pn. The application realizes efficient n-type and p-type doping of the boron nitride film, and prepares a boron nitride-based homojunction pn on the flexible substrate through a large-area film exfoliation and transfer technology. The homojunction structure has high lattice matching degree and low junction formation energy, further develops the preparation and research of van der Waals homojunctions in the field of ultrawide bandgap materials, and has great application prospect in the fields of optoelectronic devices and high-power power electronic devices.

The invention belongs to the technical field of low-dimensional semiconductors, and discloses a single-layer mixed-phase molybdenum telluride selenide material and a preparation method thereof, and the preparation method comprises the following specific steps: step 1, wiping a three-temperature-zone tubular furnace and a quartz sleeve by using absolute ethyl alcohol until the surfaces are free of visible stains and impurities, and ensuring cleanliness; the invention provides a single-layer mixed-phase molybdenum telluride selenide MoSe2 (1-x) Te2x material which is a MoSe2 (1-x) Te2x planar homojunction formed by mixing and embedding a 2H phase and a 1T'phase, the thickness is about 0.7 nm, the crystal phase proportion and the band gap can be flexibly regulated and controlled according to the tellurium / selenium proportion, and the single-layer mixed-phase molybdenum telluride selenide MoSe2 (1-x) Te2x material can meet the application requirements of nano electronic and optoelectronic devices. Secondly, the invention provides a preparation method of the single-layer mixed-phase tellurium selenide molybdenum material, the method is a one-step molten salt assisted chemical vapor deposition method, the single-layer mixed-phase tellurium selenide molybdenum material prepared by the method is high in crystal quality and obvious in phase mixing characteristic, and the method has the characteristics of simple operation, mild reaction and high repeatability.

The present invention discloses a preparation method of a radial homojunction array structure of indium phosphide nanocolumns, comprising the following steps: cleaning and drying a p-type InP single crystal wafer; fabricating a nanocolumn array on the surface of the p-type InP single crystal wafer and cleaning it with an acid; wrapping an oxide layer on the side surface of the nanocolumn array and plating a transparent conductive layer. During the preparation process of the method involved in the present invention, the preparation of both indium phosphide nanocolumn arrays and radial homojunctions is achieved simultaneously. By controlling the etching time and the content of H2, the surface doping concentration and depth of indium phosphide are precisely controlled. Compared with other methods for growing radial homojunctions, the method of the present invention has simple equipment and high preparation efficiency. The present invention also provides a solar cell, and the solar cell provided by the present invention has a high solar light absorption rate and conversion efficiency.

The invention relates to a method for preparing a heterojunction and realizing metal-semiconductor edge contact by optical manipulation. When the material is excited by pulse laser, lattice units expand and contract to generate elastic waves. The elastic waves can carry enough momentum to enable the nanosheets to move on the dry substrate under the condition that the nanosheets are not uniformly illuminated. By using Gaussian beam irradiation, the nanosheets can stably move towards the center of the beam. By continuously changing the relative position between the nanosheet and the substrate, the nanosheet can freely move on the substrate. On the basis, the nanosheets made of different materials on the dry substrate are controlled to be close to each other and make contact with each other through pulse laser, or one nanosheet moves to the position above the other nanosheet, and a transverse heterojunction (homojunction) or a vertical heterojunction (homojunction) can be prepared. In addition, on the substrate with the prepared metal electrode, metal-semiconductor edge contact can be achieved by driving the nanosheet to make contact with the edge of the metal electrode, and the electrical performance of the device is improved.

The invention belongs to the technical field of solar cells, and particularly relates to an amorphous carbon / gallium arsenide double-junction solar cell and a preparation method thereof. The solar cell provided by the invention comprises a lower electrode, a substrate, a buffer layer, a lower cell, a tunnel junction, an upper cell, a transparent conductive layer, an antireflection layer and an upper electrode which are stacked in sequence, the lower cell is a GaAs homojunction and comprises a p-type GaAs layer and an n-type GaAs layer which are stacked, the p-type GaAs layer is in contact with the buffer layer, and the n-type GaAs layer is in contact with the tunnel junction; the upper battery is of an amorphous carbon structure and comprises a p-type amorphous carbon layer and an n-type amorphous carbon layer which are arranged in a stacked mode, the p-type amorphous carbon layer is in contact with the tunnel junction, and the n-type amorphous carbon layer is in contact with the transparent conducting layer. The amorphous carbon / gallium arsenide double-junction solar cell provided by the invention has the advantages of low production cost, wide spectrum coverage, good stability and few interface defects.

This application relates to the field of semiconductor integrated circuit manufacturing technology, specifically to an SOI-LDMOS device and its fabrication method. The SOI-LDMOS device includes: a substrate layer, a buried oxide layer, and an epitaxial layer stacked sequentially from bottom to top; a drift region is formed in the epitaxial layer; a source region and a drain region are formed on both sides of the drift region; a doped polysilicon field plate is formed on the drift region, and a vertical heterojunction is formed between the doped polysilicon field plate and the drift region. When the device is in the off state, the vertical heterojunction is depleted; one end of the doped polysilicon field plate contacts and overlaps with the source region to form a vertical homojunction; the other end of the doped polysilicon field plate is doped with a first conductivity type impurity to form a first conductivity type doped region; the main body of the doped polysilicon field plate forms a lateral heterojunction with the first conductivity type doped region; the doped polysilicon field plate contacts the metal electrode of the drain region through the heterojunction. The fabrication method is used to fabricate the above-mentioned SOI-LDMOS device.

The embodiment of the invention discloses a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction and a preparation method of the self-driven ultraviolet detector. The detector comprises a boron gradient doped diamond substrate; the boron gradient doped diamond substrate comprises a region with relatively low boron doping concentration and a region with relatively high boron doping concentration; an electrode; and the two electrodes are respectively arranged in a region with relatively low boron doping concentration and a region with relatively high boron doping concentration. The self-driven ultraviolet detector based on the boron gradient doped diamond homojunction, disclosed by the embodiment of the invention, has the responsivity of 3.5 mA / W and the specific detection rate of 1012 Jones under the bias voltage of 0V, can effectively carry out self-driven ultraviolet detection, and has good stability and good application prospects.

The invention provides a SiC JBS diode with a groove terminal connected with a grounding buried layer and a preparation method thereof, and the diode sequentially comprises a cathode, a substrate, a buffer layer, a first epitaxial layer, a second epitaxial layer, and an anode located on the surfaces of the second epitaxial layer and a terminal transition ring from bottom to top. The side, close to the second epitaxial layer, in the first epitaxial layer comprises a grounding buried layer located in a preset area and a terminal transition ring located outside the preset area, and the orthographic projection of the second epitaxial layer and the orthographic projection of the terminal transition ring are not overlapped in the direction perpendicular to the plane where the substrate is located; the side, away from the first epitaxial layer, in the second epitaxial layer comprises a main junction. Due to the fact that the grounding buried layer accelerates discharge of excess carriers, peak electric field distribution in the device is effectively modulated, the electric field at the epitaxy / substrate homojunction is reduced, collision ionization at the epitaxy / substrate homojunction is reduced, single-particle transient current and transient temperature are effectively reduced, and the threshold value of electric leakage degradation of the device is improved.

The application discloses a homogenous-heterogeneous dual junction coupled photocatalyst and a preparation method and application thereof. The preparation method of the homogenous-heterogeneous dual junction coupled photocatalyst comprises the following steps: mixing carbon nitride, lithium chloride and potassium chloride to obtain mixed powder, calcining the mixed powder, cooling and washing, and drying to obtain a precursor; mixing the precursor, ammonium chloride and sodium thiocyanate, grinding to obtain a mixture, calcining the mixture, cooling and washing, and drying to obtain homogenous junction carbon nitride; dispersing ferric chloride hexahydrate and sodium acetate in ethanol, adding H2O drop by drop to obtain a mixed solution, adding the homogenous junction carbon nitride into the mixed solution, ultrasonicating to obtain a dispersion liquid, heating the dispersion liquid, cooling and washing, and drying to obtain the homogenous-heterogeneous dual junction coupled photocatalyst; and the removal rate of the homogenous-heterogeneous dual junction coupled photocatalyst to TC is 99.8% within 20 min, the problem that the heterojunction is limited by the influence of acid and alkalinity is solved, and the pH application range of the photocatalyst is widened.