222 results about "Homojunction" patented technology

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core / shell and core / multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

A multijunction solar cell including an upper first solar subcell, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell; a third solar subcell adjacent to said second solar subcell. A first graded interlayer is provided adjacent to said third solar subcell. A fourth solar subcell is provided adjacent to said first graded interlayer, said fourth subcell is lattice mismatched with respect to said third subcell. A second graded interlayer is provided adjacent to said fourth solar subcell; and a lower fifth solar subcell is provided adjacent to said second graded interlayer, said lower fifth subcell is lattice mismatched with respect to said fourth subcell.

A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet / infrared dual-band detector is disclosed that is configured to simultaneously detect UV and IR.

The invention discloses a method for preparing a semiconductor photoelectric device, which comprises the following steps: 1) selecting a substrate; 2) preparing a semiconductor homojunction or heterojunction on the substrate by utilizing the processes of epitaxy, crystallizing, sputtering, evaporating, rotary coating, bonding, welding, linking, chemically corroding or etching; and 3) generating an electrode at the top end or bottom end of the semiconductor homojunction or heterojunction, thereby forming a whole semiconductor device by the substrate, the semiconductor homojunction or heterojunction and the electrode. According to the method provided by the invention, semiconductor junctions in various bandwidths can be provided, a wider working spectral region can be covered, the semiconductor junctions can be prepared on the substrates having different specific structures, and the advantages in preparation and performance characteristics of a planar film structure and a nanometer line are combined together, thereby realizing a semiconductor photoelectric device structure having a wider function.

A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.

The present disclosure provides a photovoltaic device that has a photon receiving surface and a first single homojunction silicon solar cell. The first single homojunction silicon solar cell comprises two doped silicon portions with opposite polarities and has a first bandgap. The photovoltaic device further comprises a second solar cell structure that has an absorber material with a Perovskite structure and has a second bandgap that is larger than the first bandgap. The photovoltaic device is arranged such that each of the first and second solar cells absorb a portion of the photons that are received by the photon receiving surface.

The present disclosure coats an amorphous silicon (Si) layer on a doped Si substrate of a solar cell. Or, a silicon dioxide (SiO2) layer is grown on the doped Si substrate and beneath the amorphous Si layer. A heterojunction interface and a homojunction interface are formed in the solar cell in a one-time diffusion. Thus, a heterojunction solar cell can be easily fabricated and utilities compatible to those used in modern production can still be used for reducing cost.

Methods are described for fabricating HIT solar cells, including double heterojunction and hybrid heterojunction-homojunction solar cells, with very thin single crystal silicon wafers, where the silicon wafer may be less than 80 microns thick, and even less than 50 microns thick. The methods overcome potential issues with handling these very thin wafers by using a process including epitaxial silicon deposition on a growth substrate, partial cell fabrication, attachment to a support substrate and then separation from the growth substrate. Some embodiments of the present invention may include a solar cell device architecture comprising the combination of a heterostructure on the front side of the device with a homojunction at the rear of the device. Furthermore, device performance may be enhanced by including a dielectric stack on the backside of the device for reflecting long wavelength infrared radiation.

The invention discloses a two-dimensional transition metal chalcogenide homojunction photoelectric detector with a perpendicular growth structure and a preparation method therefor. The protector is provided with a bottom electrode and a mask layer on the upper surface of an insulating substrate in sequence, wherein a through hole communicated with the bottom electrode is formed in the center of the mask layer; an N type semiconductor material perpendicular to the upper surface of the bottom electrode is growing in the through hole; a P type semiconductor material is growing on the N type semiconductor material; the N type semiconductor material and the P type semiconductor material are growing along a direction perpendicular to the bottom surface to form a PN homojunction; a top electrode is arranged above the mask layer; and the bottom electrode is in ohmic contact with the N type semiconductor material, the top electrode and the P type semiconductor material separately. The protector provided by the invention has the advantages of high response speed, high sensitivity, simple preparation, high repeatability, and the like.

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core / shell and core / multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

The invention mainly belongs to the technical field of preparation of homojunction, and specifically relates to a transition metal chalcogenide homojunction and a preparation method thereof. According to the method, a transition metal chalcogenide nanosheet is used as a raw material, a protection layer is arranged on a part of area of the transition metal chalcogenide nanosheet for protection, and the unprotected area of the transition metal chalcogenide nanosheet is treated by an acid to repair the structural defects of the transition metal chalcogenide nanosheet so as to form the transition metal chalcogenide homojunction in the protected and unprotected areas of the transition metal chalcogenide nanosheet. The structure of the homojunction prepared from the method provided by the invention is scarcely influenced by the environment, has good stability and strong operability, requires no high temperature annealing and requires no doping process.

The present invention provides a doped homojunction chalcogenide thin film transistor and a method of fabricating the same, comprising forming an N-type chalcogenide layer constituting a channel layer on a substrate, forming and patterning a diffusion prevention layer on the upper part of the N-type chalcogenide layer, and forming a P-type chalcogenide layer constituting source and drain regions by depositing and diffusing Te alloy on the N-type chalcogenide layer. With the present invention, a thin film transistor can be fabricated using chalcogenide material having N-type conductivity and chalcogenide material having P-type conductivity.

The invention discloses a serially connected type perovskite / homojunction silicon laminated solar cell and a preparation method thereof. The laminated solar cell comprises an n-type homogeneous crystalline silicon solar cell serving as a bottom cell based on a PERC (passivated emitter rear contact cell) structure. A perovskite solar cell with a transparent electrode serves as a top cell. The structure of the laminated solar cell sequentially comprises a metal bottom electrode, a bottom electrode opened passivation layer, a local or all n-type heavily doped layer, n-type silicon, a p-type heavily doped emitter, an emitting electrode passivation layer, a tunneling layer, an electron transport layer, a perovskite absorption layer, a hole transport layer, a top electrode buffer layer, a transparent electrode, a metal grid line electrode and an antireflection film from bottom to top. The laminated solar cell is based on the mainstream homojunction PREC solar crystalline silicon cell in the current photovoltaic industry, and is simple in preparation process, low in preparation cost, high in light conversion efficiency and suitable for large-scale industrial production.

The invention relates to the field of new energy sources, in particular to a silicon-based solar cell and a preparation method thereof. A silicon-based double-junction solar cell with a homojunction and a heterojunction comprises a crystal silicon chip, a silicon-based semiconductor film, a transparent conducting film, a front side metal electrode and a back side metal electrode, wherein the crystal silicon chip is a monocrystalline silicon chip or a polycrystalline silicon chip; the homojunction is formed on the front side or the back side of the crystal silicon chip by a diffusion method and is a PN junction or a PP<->, PP<+>, NN<-> or NN<+> concentration junction; the front side of the crystal silicon chip is provided with the silicon-based semiconductor film; the silicon-based semiconductor film is an amorphous film or a nano-film of silicon, silicon / germanium or a silicon carbide material; and the heterojunction is formed between the silicon-based semiconductor film and the surface of the crystal silicon chip with the homojunction. High conversion efficiency and high cost performance of the solar cell are realized, and the consistence and stability of photoelectric performance of the cell are improved.

A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet / infrared dual-band detector is disclosed that is configured to simultaneously detect UV and IR.

The invention provides a method for preparing highly effective silicon solar cell sheet, which includes: directly printing or spraying oxide phosphorus source or silicon dioxide phosphorus latex source on a P-type silicon sheet; directly forming a concentrated phosphorus diffusion region pattern used as concentrated phosphorus diffusion source; diffusing in phosphorus oxychloride ambience to a transverse N+N high and low junction for one time; etching periphery, removing phosphorus silicon glass, depositing silicon nitride film, silk screen printing front back electrode and back aluminum, passivating by hydrogen and sintering. The method only needs one time diffusion to form a N+N high and low homojunction and dose not need growing silicon dioxide to screen and forming a concentrated and thin phosphorus twice diffusion region by twice photoetching, so that a plurality of working procedures such as oxidization, photoetching and twice diffusion can be saved, conversion efficiency is increased.

The invention provides silver-aluminum paste used for a positive electrode of a high-performance N type solar cell. The silver-aluminum paste aims at solving the problems that when homojunction metal aluminum powder serves as additives in silk-screen printing silver-aluminum paste of n type crystalline silicon solar cells, due to the fact that aluminum powder is prone to oxidation, aluminum is prevented from conducting further diffusion and alloying on p+ transmitter layers. The silver-aluminum paste is composed of electric conduction silver powder, glass powder, organic carrier phases and additive aluminum and silicon doped alloy powder, and is characterized in that the aluminum-silicone alloy powder serves as additives and the content of silicone in the aluminum-silicon alloy powder ranges from 1 wt% to 20 wt%. The aluminum-silicone alloy powder is heavily doped in p+ transmitters through diffusion, and therefore highly electrically-conductive loops are formed by silver-silicon transmitters, and the contact resistance is reduced. Due to the silicone in the aluminum-silicone alloy, it is avoided that the silicone in the p+ transmitters is diffused to the electrode due to mutual aluminum and silicone diffusion in the position of interfaces of the silver-silicone transmitters at a high temperature, surface defects of the transmitters can be avoided, electric leakage is reduced, and the open pressure is improved.

The invention discloses an organic light emitting diode device, a display panel and a display device. The organic light emitting diode device is mainly characterized in that existing serial top-emitting OLED devices are improved, a homojunction structure is utilized and functional layers of the top-emitting OLED devices connected in series are improved, so that each function layer comprises a hole injection layer, a hole transmission layer, a hole side light-emitting layer, an electron injection layer, an electron transmission layer, an electron side light-emitting layer and at least one group of charge producing layers a and charge producing layers b located between the hole side light-emitting layer and the electron side light-emitting layer, the hole injection layer, the hole transmission layer and the hole side light-emitting layer are sequentially arranged on the side close to an anode, the electron injection layer, the electron transmission layer and the electron side light-emitting layer are sequentially arranged on the side close to a cathode. A first light-emitting unit ...and an Nth light-emitting unit of each serial top-emitting OLED device are of homojunction structures, the using categories of organic materials are decreased, injection potential barriers of charge carriers in the devices are eliminated, the charge carrier injection efficiency and the efficiency of the devices are improved, and drive voltage of the devices is reduced.

A semiconductor device includes field electrode structures regularly arranged in lines in a cell area and forming a first portion of a regular pattern. Termination structures are formed in an inner edge area surrounding the cell area, wherein at least portions of the termination structures form a second portion of the regular pattern. Cell mesas separate neighboring ones of the field electrode structures from each other in the cell area and include first portions of a drift zone, wherein a voltage applied to a gate electrode controls a current flow through the cell mesas. At least one doped region forms a homojunction with the drift zone in the inner edge area.

A process for producing three dimensionally structured thin film photovoltaic devices with self-aligned back contacts. The photovoltaic device is constructed using electrodeposition on micrometer-scale interdigitated electrodes on an insulating substrate. During fabrication, these interdigitated electrodes serve as the active electrodes for deposition of materials including semiconductors. After fabrication, these interdigitated electrodes serve as back contacts for carrier collection when the device is in use. The process can be used to fabricate homojunction, heterojunction and multijunction photovoltaic devices.

A method to manufacture Copper Indium Gallium di Selenide (Cu(In,Ga)Se2) thin film solar cell includes evaporating elemental Cu, In, Ga, and Se flux sources onto a heated substrate in a single vacuum system to form a non-intentionally doped Cu(In,Ga)Se2 p-type conductivity layer and exposing the p-type conductivity layer to a thermally evaporated flux of Beryllium (Be) atoms to convert a surface layer of the p-type conductivity layer to an n-type conductivity layer resulting in a buried Cu(In,Ga)Se2 p-n homojunction. Also, the source of Be atoms includes a circular rod of Be having a uniform cross-section that is resistively heated and having its temperature controlled by passing an electrical current through the rod.

The invention discloses a silicon substrate radial homojunction heterojunction solar battery and a manufacturing method of the silicon substrate radial homojunction heterojunction solar battery. The silicon substrate radial homojunction heterojunction solar battery comprises a silicon substrate and a silicon line array on the silicon substrate. Each silicon line in the silicon line array comprises an inner layer, a middle layer and an outer shell layer, a radial PN junction is formed between the inner layer and the middle layer of each silicon line, and a radial heterojunction is formed between the middle layer and the outer shell layer of each silicon line. The PN junctions are homojunctions, the homojunctions are crystalline silicon PN junctions, PP+ concentration junctions or NN+ concentration junctions, and the heterojunctions are crystalline silicon / noncrystalline silicon PP+ concentration junctions, P+P++ concentration junctions, N+N++ concentration junctions, NN+ concentration junctions, NI junctions or PI junctions. The advantages of a radial PN junction battery and the advantages of a homojunction heterojunction battery are combined by the silicon substrate radial homojunction heterojunction solar battery sufficiently, therefore, the high photoelectric conversion efficiency can be achieved on low-quality silicon materials, and meanwhile the performance stability of the silicon substrate radial homojunction heterojunction solar battery is improved.

The invention relates to a nano ZnO semiconductor junction array and a preparation method thereof, belonging to the field of low-dimensional nano materials and nano technology. The method comprises the following steps of: adopting a CVD method to prepare ZnO seed crystal on a Si substrate, and then putting the seed crystal in solution for continuous growth; carrying out heat treatment on the product grown by the solution method, cooling and then carrying out primary solution-method growth once again so as to obtain the needed product. In the two times of solution-method growth processes, the ZnO can be doped, thus realizing that the ZnO semiconductor junction is arrayed and further realizing growth of the nano ZnO array on a single ZnO micron column. The method not only can realize the growth of a ZnO homojunction array, but also can be used for growing a ZnO heterojunction array, and has low growth temperature, simple equipment and low cost.

The invention provides a coaxial homogeneous ZnO pn junction nanorod and a preparation method thereof, in order to solve the technical problem that the coaxial homogeneous ZnO pn junction nanorod cannot be prepared in the field of one-dimensional nanomaterials. A non-doped ZnO area is arranged at one end of the coaxial homogeneous ZnO pn junction nanorod, and the rest of the coaxial homogeneous ZnO pn junction nanorod is an Sb doped ZnO area, wherein a doping concentration of Sb is 1-7at.%. The method has the significant characteristic that continuous epitaxial growth of an n-type non-doped ZnO area and a p-type Sb doped ZnO area is achieved by an electrochemical deposition method. The coaxial homogeneous ZnO pn junction nanorod can be prepared on a cold condition of 80 DEG C; in addition, equipment is simple; the cost is low; and references can be provided for preparing a nano photoelectric device.

The invention belongs to the technical field of photoelectrochemical cell semiconductor electrodes, and discloses a pyramid silicon-based photocathode with a uniform pn homojunction layer and a preparation method thereof. The uniform pn homojunction layer is diffused on a pyramid morphology p-type silicon substrate, a titanium dioxide protective layer is deposited on an atomic layer on the pn homojunction layer, and platinum nanoparticles are photoelectrically deposited on the titanium dioxide protective layer to serve as a catalyst. The preparation method mainly comprises five steps of silicon wafer substrate pyramid morphology etching, surface cleaning, spin coating and high-temperature diffusion, titanium dioxide layer deposition and platinum catalyst loading. the uniform pn homojunction layer is effectively prepared on the pyramid-shaped silicon substrate, and the photo-generated voltage and the stability are improved; AND the preparation method has the advantages of safe and simple operation process, cheap and easily available raw materials, stable photoelectrocatalysis performance and good repeatability.

A kind of homogeneous barium-based slag ball used in converter process, belong to slag material used in converter process. The raw material and weight percentage composition for producing slag ball as follow: weight metal and stone 1~95, iron particle or steel particle 0~79, aluminate cement 5~15, magnesium sand 0~5, proportional adding water, weight metal and stone, iron particle or steel particle, aluminate cement, magnesium sand and mixing, packing compact and shaking to preparing the ball, there is a hollow toroid that square crossing passing sphere largest circumference in the sphere surface. The invention of the ball built-in and built-out homojunction, the whole density homogeneity and locate accuracy in steel liquid. The ball shape designed rational, and the ball has stop slag efficiently. The invention can efficiently decrease the steel bag slag blanket thickness; prolong the steel bag length of life. Compare with the current technology, the price is low. It has the profit for the steel factory to further optimization production and improves comprehensive benefit. In addition, the ball contain BaSO4 above 65%, if every stove used one slag ball that we produce, the silicon, aluminium and barium utilization can be decreased, decreasing steel production cost.