70 results about "Homojunction" patented technology

The invention provides a transistor with a programmable horizontal double-floating-gate homojunction. The transistor comprises two floating gate layers which are independent from each other and are composed of multiple layers of graphene; the tunneling layer is positioned above the floating gate layer; the channel layer is positioned above the tunneling layer; the source electrode and the drain electrode are located above the two ends of the channel layer respectively, so that the floating gate layer can achieve regulation and control of source-drain contact, and then it is guaranteed that a floating gate electric field can achieve regulation and control of Schottky barriers of the source electrode and the drain electrode; and the two direct tunneling electrodes are respectively positioned above two ends of the tunneling layer and are not in contact with the channel layer, so as to inject charges into the floating gate layer. The invention also provides a preparation method of the transistor. According to the transistor provided by the invention, a bilateral floating gate is used for regulating and controlling an energy band in contact with two sides, and any one of four junctions (a p-n junction, an n-p junction, a p-p junction and an n-n junction) can be freely formed and switched.

This invention provides a charge-trapping type two-dimensional horizontal homojunction rectifier and its fabrication method, relating to the field of semiconductor electronics technology. It enables p-doping and n-doping of bipolar two-dimensional tungsten diselenide using graphodyne and a silicon dioxide insulating layer under a positive gate electric field. The resulting p-n junction achieves a large rectification ratio and stable rectification performance. This rectifier simultaneously performs n-type and p-type doping on the two-dimensional tungsten diselenide, forming a p-n homojunction in the horizontal direction. This allows the output current to exhibit high and low levels depending on the polarity of the input drain-source voltage, thus achieving the rectifier function. The rectifier achieves p-type and n-type doping under the influence of a positive gate electric field applied by the silicon gate electrode, through simultaneous contact between a portion of the two-dimensional tungsten diselenide with the graphodyne film and the silicon dioxide insulating layer, forming a homojunction. The technical solution provided by this invention is applicable to the rectification process.

The invention belongs to the technical field of micro-nano semiconductor electronic devices, and discloses a reconfigurable field effect transistor based on different-surface contact electrodes and a preparation method of the reconfigurable field effect transistor. The transistor comprises a SiO2 / Si substrate, an hBN passivation layer, a source / drain Au electrode, a MoTe2 channel, an hBN dielectric layer, a graphene gate and a top gate Au electrode from bottom to top, the source electrode, the drain electrode and the channel form different-surface contact, and an air cavity is formed between the channel and the dielectric layer. The air cavity causes the top gate electric field to generate asymmetric regulation and control on the channel, so that one end of the channel is kept in an eigenstate, and the other end of the channel is regulated and controlled by the gate voltage to form an n-type or p-type region, thereby forming an ni or pi homojunction in the single channel, and realizing reconfigurable carrier transport polarity. The invention further provides a preparation method based on dry transfer, the process is simple, and the preparation method is suitable for a reconfigurable logic circuit and a nano electronic system.

The invention discloses an electrical counter based on a super-smooth homojunction interface and a counting method, and relates to the technical field of micro-nano electromechanical systems (MEMS / NEMS). Comprising a base part, a rotatable part, a first layered material layer, a second layered material layer and a measuring and processing system, and the rotatable part can rotate relative to the base part; the measuring and processing system is electrically connected to the first layer of layered material and the second layer of layered material and is configured to: monitor a change in a resistance value across the homojunction interface during the rotational motion; identifying a characteristic reduction of the resistance value; outputting a count signal based on the identification of the characterization reduction; the beneficial effects of the invention are that the scheme utilizes the intrinsic physical effect of the lattice of the layered material at a specific rotation angle to realize a novel counting sensing mechanism which is high in precision, high in signal-to-noise ratio and extremely easy to miniaturize.

The invention relates to the field of photoelectric energy materials, in particular to a Cu2O p-n homojunction composite photocatalytic nitrogen fixation material, a preparation method and application, the method comprises the following steps: adding Pr (NO3) 3 and n-type I-Cu2O into a Cu2O reaction solution or adding KI and p-type Pr-Cu2O into the Cu2O reaction solution, and carrying out hydrothermal reaction to obtain the Cu2O p-n homojunction composite photocatalytic nitrogen fixation material. According to the method, a Cu2O p-n homojunction composite structure is constructed, a built-in electric field formed by p-type and n-type semiconductor interfaces is utilized, separation of photo-generated electrons and holes is accelerated, photo-generated carrier recombination is effectively inhibited, the stability and catalytic efficiency of the material are improved, and the problems of low catalytic activity and poor stability when Cu2O is used as a catalyst for synthesizing ammonia through light nitrogen fixation are solved.

The invention relates to a chiral perovskite semiconductor circular polarization luminescence enhancement structure and a preparation method and application thereof, and belongs to the technical field of chiral photoelectric semiconductor materials and micro-nano devices. According to the structure, two layers of chiral perovskite semiconductor nanosheets are stacked through a controllable torsion angle to form a homojunction, and the torsion angle ranges from 0 degree to 90 degrees. According to the present invention, by adjusting the interlayer torsion angle, the continuous regulation and the significant enhancement of the circular polarization light emitting polarization degree are achieved, and especially during the parallel stacking (0 degree torsion angle), the circular polarization light emitting polarization degree is improved by 3 times compared with the single nanosheet and the vertical stacking (90 degree torsion angle). The enhancement effect is derived from inter-layer coupling dependent on a torsion angle, spin selective charge transfer is promoted, exciton binding energy is enhanced, and electron-phonon scattering is inhibited. The invention provides an effective way for regulating and controlling the polarization degree through the torsion angle, and is suitable for the fields of circular polarization luminescent devices, spin optoelectronic devices, quantum information processing and the like.

The application discloses a chip, a preparation method and an electronic device. At least one channel structure, a gate, a gate oxide layer and a source-drain electrode layer are arranged on a substrate. The source and the drain of a transistor are formed by the source-drain electrode layer. The gate oxide layer realizes isolation between the gate and the channel region of the channel layer. The gate surrounds the channel region of the channel layer, and realizes that the gate structure wraps the channel. The sacrificial layer around the channel region is removed, the sacrificial layer in the remaining area is reserved, and the content of the doped ions in the sacrificial layer is not more than 5%. The doped semiconductor material in the sacrificial layer and the undoped semiconductor material in the channel layer can be regarded as different doping concentrations of the same semiconductor material, a homojunction can be formed between the adjacent sacrificial layer and the channel layer, the stress between the adjacent channel layer and the sacrificial layer is reduced, and the possibility of dislocation and warping is reduced.

The invention belongs to the technical field of pulse characteristic measurement, and relates to an on-chip integrated single autocorrelator and a measurement method thereof. The autocorrelator comprises an SOI substrate, a photonic crystal waveguide is formed on the SOI substrate through etching, and an insulating layer, an indium selenide layer and a chromium gold electrode array are sequentially arranged on the photonic crystal waveguide; the photonic crystal waveguide is composed of a straight waveguide area in the middle area and photonic crystal areas on the two sides. The chromium-gold electrode array is composed of a plurality of pairs of chromium-gold electrodes which are arranged at equal intervals in the photonic crystal waveguide direction, and each pair of chromium-gold electrodes serve as a source electrode and a drain electrode respectively; a back gate electrode is arranged on an unetched region of the SOI substrate; during measurement, a p-i-n homojunction is formed in the indium selenide material; the source electrode is connected with the p-type region of the indium selenide layer, the drain electrode is connected with the n-type region of the indium selenide layer, and the indium selenide p-i-n homojunction photoelectric detector is formed by the source electrode and the drain electrode. The problem that an existing autocorrelator is difficult to integrate and cannot meet actual requirements is solved.

The application discloses a homojunction organic electroluminescent diode and a preparation method and application thereof. The composition of the homojunction organic electroluminescent diode comprises a substrate, a bottom electrode, a first light-emitting unit, a charge generation layer, a second light-emitting unit and a top electrode which are sequentially arranged in layers, the composition of the first light-emitting unit comprises an electron injection layer, a first electron transport layer and a first light-emitting layer, the composition of the charge generation layer comprises a hole transport layer, a first hole injection layer, a metal layer and a second electron transport layer, the composition of the second light-emitting unit comprises a second light-emitting layer and a second hole injection layer, and the host materials of the first electron transport layer, the first light-emitting layer, the hole transport layer, the second electron transport layer and the second light-emitting layer are the same. The homojunction organic electroluminescent diode has the advantages of high luminous brightness, high efficiency, high stability, wide applicable types of preparation materials and the like, and can be used as an excitation light source of an organic solid laser diode.

The invention discloses a high-sensitivity biosensor for enhancing photoelectric response based on multi-exciton effect, which is of a layered stacking structure along the vertical direction and sequentially comprises an ITO (indium tin oxide) conductive glass substrate, an HQ-CdS hierarchical quantum structure homojunction photoelectrode and a 5-HT aptamer modification layer from bottom to top, wherein the HQ-CdS photoelectrode is composed of a B-CdS film and an in-situ grown C-modified CdS two-dimensional nanosheet and forms a homojunction structure, the preparation method of the sensor comprises the steps of preparing the B-CdS photoelectrode through chemical bath deposition and annealing treatment, constructing the HQ-CdS photoelectrode through in-situ photoelectrochemical treatment, and then completing sensor assembly through aptamer fixation and target molecule combination. According to the invention, the multi-exciton effect is used as a core signal amplification strategy, and the problem of insufficient resolution of the existing PEC aptamer sensor is solved.

This invention discloses a carbon nitride homojunction photocatalyst for the selective conversion of methane to ethanol, its preparation method, and its application, belonging to the field of photocatalysis. The carbon nitride homojunction photocatalyst for the selective conversion of methane to ethanol is made of carbon nitride semiconductor CNC. I Axially oxygen-coordinated copper single-atom co-catalyst and carbon nitride semiconductor CN II Composition. Based on carbon nitride semiconductor CN. I The first semiconductor is formed by supramolecular assembly and thermal polymerization, on which an axially oxygen-coordinated copper single-atom co-catalyst and a second semiconductor CN are simultaneously introduced. II The carbon nitride homojunction photocatalyst for the selective conversion of methane to ethanol, denoted as Cu-CN, was prepared. II / CN I The catalyst used in this invention is made from abundant and inexpensive raw materials, and its preparation route is simple. The prepared catalyst significantly promotes the separation of charge carriers and exhibits excellent catalytic performance in the photocatalytic conversion of methane to ethanol, showing broad application prospects.

The invention discloses a halide semiconductor n-p homojunction and a preparation method and application thereof, and the preparation method comprises the steps: introducing trichloro [3-(pentafluorophenyl) propyl] silane (TPFS for short) to the surface of a halide semiconductor through a solution method, and constructing the halide semiconductor n-p homojunction. The trichloro [3-(pentafluorophenyl) propyl] silane can greatly improve the work function of the surface of a halide semiconductor, so that the surface of the halide semiconductor is converted from an n type to a p type, hole extraction is facilitated, electrons are blocked, and interface recombination is inhibited. In addition, trichloro [3-(pentafluorophenyl) propyl] silane can passivate defects on the surface of a halide semiconductor and enhance the stability of a halide semiconductor film. The process is simple, the cost is low, and large-area preparation and commercial application of halide semiconductor photoelectric devices are facilitated.

The present disclosure provides a two-dimensional homojunction photodiode, an optical logic computing device, a method and a system. The two-dimensional homojunction photodiode comprises: a substrate for supporting a layer; a device channel layer disposed on the substrate, the device channel layer comprising a two-dimensional homojunction of an intrinsic two-dimensional material layer and a strained two-dimensional material layer extending along a direction parallel to the surface of the substrate; wherein the device channel layer is configured to adjust at least one of the strain direction and the strain size to regulate the light response characteristics of the two-dimensional homojunction photodiode, and to adjust the length ratio of the strained two-dimensional material layer in the device channel layer to build an asymmetric device channel layer to regulate the polarization sensitivity characteristics of the photodiode. A source and a drain are respectively disposed at both ends of the device channel layer.

This invention relates to a lateral homo-heterojunction memory device and its fabrication method. The memory device includes a substrate gate layer, a first dielectric layer, a second dielectric layer, a two-dimensional semiconductor channel layer, and ohmic electrodes. The first and second dielectric layers are both located on the substrate gate layer and are in contact with each other. The two-dimensional semiconductor channel layer is located on the first and second dielectric layers. The ohmic electrodes are located at both ends of the two-dimensional semiconductor channel layer. This memory device uses a composite dielectric layer to perform dielectric modulation and electrostatic gate modulation on the two-dimensional semiconductor channel layer, thereby forming a lateral heterojunction in a homogeneous material. The cross-section of the formed lateral heterojunction is located at the junction of the first and second dielectric layers, and the interface of the formed lateral heterojunction consists of only one line, reducing defects at the interface. Furthermore, since the heterojunction is formed using the same material, there is no lattice mismatch problem between different materials, thus improving the electrical performance of the memory.

The application discloses a high-response optoelectronic homojunction field effect device with adjustable gate, a preparation method thereof and an optoelectronic response control method. The device comprises a substrate, a metal gate layer and an insulating layer arranged on the surface of the substrate, the insulating layer partially covers the metal gate layer, a channel layer is arranged on the surface of the insulating layer, and a source electrode and a drain electrode are arranged on the surface of the channel layer at intervals; the channel layer is made of a material with bipolar field effect characteristics; the channel layer is adjusted to be in an n ‑ -p or n ‑ -n homojunction state by adjusting the voltage of the metal gate layer. The preparation method comprises the following steps: evaporating the metal gate layer on the substrate; arranging the insulating layer on the metal gate layer and the substrate by a polyvinyl alcohol dry transfer method; arranging the channel layer on the surface of the insulating layer by the polyvinyl alcohol dry transfer method; and evaporating the source electrode and the drain electrode on the channel layer. The device obtained by the application can realize the reconfigurable n ‑ -p or n ‑ -n homojunction state, the maximum optical response is 1.0 A / W, and high-sensitivity detection can be realized.

The invention discloses a homojunction avalanche photodetector based on a silicon substrate and a preparation method of the homojunction avalanche photodetector, and belongs to the technical field of photodetectors. The homojunction avalanche photodetector sequentially comprises a substrate layer, a gate electrode, an insulating layer, a homojunction thin film layer, a protective layer, a source electrode and a drain electrode from bottom to top, the homojunction thin film layer comprises a first thin film layer, a second thin film layer and a third thin film layer which are all located above the insulating layer, the source electrode and the drain electrode are located above the first thin film layer and the third thin film layer respectively, and the gate electrode is connected with the insulating layer. The homojunction avalanche photodetector has the advantages of being simple in structure, low in threshold voltage, high in avalanche gain, high in electric field regulation and control performance and excellent in stability.

This invention discloses an N-P homojunction all-inorganic perovskite solar cell for indoor photovoltaic applications. This invention provides a method to overcome the efficiency limit of indoor photovoltaics. By treating the interface of an all-inorganic perovskite (CsPbI3) thin film with a surface-modified material (sodium dodecyl sulfate: SDS), a CsPbI3 perovskite thin film with an N-P homojunction is prepared in a glove box. The formation of PbS on the surface is observed using scanning electron microscopy (SEM), and the formation of the N-P homojunction is verified using atomic force microscopy (KPFM). The formation of the N-P homojunction on the CsPbI3 thin film surface solves the bandgap matching problem between the CsPbI3 perovskite thin film and the charge transport layer. Most importantly, J sc Significant improvements have been made, which enhances the performance of all-inorganic perovskite indoor photovoltaics. sc This provides an effective strategy.

The application discloses a flexible boron nitride homojunction pn and a preparation method, wherein a sulfur-doped n-type boron nitride film is grown on a sapphire substrate through a low-pressure chemical vapor deposition technology; a magnesium-doped p-type boron nitride film is grown on a copper substrate through a low-pressure chemical vapor deposition technology; the sulfur-doped n-type boron nitride film and the magnesium-doped p-type boron nitride film are transferred to a flexible substrate through a polymethyl methacrylate assisted liquid phase exfoliation technology, and heat treatment is conducted in an argon atmosphere to obtain a flexible boron nitride homojunction pn. The application realizes efficient n-type and p-type doping of the boron nitride film, and prepares a boron nitride-based homojunction pn on the flexible substrate through a large-area film exfoliation and transfer technology. The homojunction structure has high lattice matching degree and low junction formation energy, further develops the preparation and research of van der Waals homojunctions in the field of ultrawide bandgap materials, and has great application prospect in the fields of optoelectronic devices and high-power power electronic devices.

The invention belongs to the technical field of low-dimensional semiconductors, and discloses a single-layer mixed-phase molybdenum telluride selenide material and a preparation method thereof, and the preparation method comprises the following specific steps: step 1, wiping a three-temperature-zone tubular furnace and a quartz sleeve by using absolute ethyl alcohol until the surfaces are free of visible stains and impurities, and ensuring cleanliness; the invention provides a single-layer mixed-phase molybdenum telluride selenide MoSe2 (1-x) Te2x material which is a MoSe2 (1-x) Te2x planar homojunction formed by mixing and embedding a 2H phase and a 1T'phase, the thickness is about 0.7 nm, the crystal phase proportion and the band gap can be flexibly regulated and controlled according to the tellurium / selenium proportion, and the single-layer mixed-phase molybdenum telluride selenide MoSe2 (1-x) Te2x material can meet the application requirements of nano electronic and optoelectronic devices. Secondly, the invention provides a preparation method of the single-layer mixed-phase tellurium selenide molybdenum material, the method is a one-step molten salt assisted chemical vapor deposition method, the single-layer mixed-phase tellurium selenide molybdenum material prepared by the method is high in crystal quality and obvious in phase mixing characteristic, and the method has the characteristics of simple operation, mild reaction and high repeatability.

The invention belongs to the technical field of solar cells, and particularly relates to an amorphous carbon / gallium arsenide double-junction solar cell and a preparation method thereof. The solar cell provided by the invention comprises a lower electrode, a substrate, a buffer layer, a lower cell, a tunnel junction, an upper cell, a transparent conductive layer, an antireflection layer and an upper electrode which are stacked in sequence, the lower cell is a GaAs homojunction and comprises a p-type GaAs layer and an n-type GaAs layer which are stacked, the p-type GaAs layer is in contact with the buffer layer, and the n-type GaAs layer is in contact with the tunnel junction; the upper battery is of an amorphous carbon structure and comprises a p-type amorphous carbon layer and an n-type amorphous carbon layer which are arranged in a stacked mode, the p-type amorphous carbon layer is in contact with the tunnel junction, and the n-type amorphous carbon layer is in contact with the transparent conducting layer. The amorphous carbon / gallium arsenide double-junction solar cell provided by the invention has the advantages of low production cost, wide spectrum coverage, good stability and few interface defects.

This application relates to the field of semiconductor integrated circuit manufacturing technology, specifically to an SOI-LDMOS device and its fabrication method. The SOI-LDMOS device includes: a substrate layer, a buried oxide layer, and an epitaxial layer stacked sequentially from bottom to top; a drift region is formed in the epitaxial layer; a source region and a drain region are formed on both sides of the drift region; a doped polysilicon field plate is formed on the drift region, and a vertical heterojunction is formed between the doped polysilicon field plate and the drift region. When the device is in the off state, the vertical heterojunction is depleted; one end of the doped polysilicon field plate contacts and overlaps with the source region to form a vertical homojunction; the other end of the doped polysilicon field plate is doped with a first conductivity type impurity to form a first conductivity type doped region; the main body of the doped polysilicon field plate forms a lateral heterojunction with the first conductivity type doped region; the doped polysilicon field plate contacts the metal electrode of the drain region through the heterojunction. The fabrication method is used to fabricate the above-mentioned SOI-LDMOS device.

The embodiment of the invention discloses a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction and a preparation method of the self-driven ultraviolet detector. The detector comprises a boron gradient doped diamond substrate; the boron gradient doped diamond substrate comprises a region with relatively low boron doping concentration and a region with relatively high boron doping concentration; an electrode; and the two electrodes are respectively arranged in a region with relatively low boron doping concentration and a region with relatively high boron doping concentration. The self-driven ultraviolet detector based on the boron gradient doped diamond homojunction, disclosed by the embodiment of the invention, has the responsivity of 3.5 mA / W and the specific detection rate of 1012 Jones under the bias voltage of 0V, can effectively carry out self-driven ultraviolet detection, and has good stability and good application prospects.

The application discloses a homogenous-heterogeneous dual junction coupled photocatalyst and a preparation method and application thereof. The preparation method of the homogenous-heterogeneous dual junction coupled photocatalyst comprises the following steps: mixing carbon nitride, lithium chloride and potassium chloride to obtain mixed powder, calcining the mixed powder, cooling and washing, and drying to obtain a precursor; mixing the precursor, ammonium chloride and sodium thiocyanate, grinding to obtain a mixture, calcining the mixture, cooling and washing, and drying to obtain homogenous junction carbon nitride; dispersing ferric chloride hexahydrate and sodium acetate in ethanol, adding H2O drop by drop to obtain a mixed solution, adding the homogenous junction carbon nitride into the mixed solution, ultrasonicating to obtain a dispersion liquid, heating the dispersion liquid, cooling and washing, and drying to obtain the homogenous-heterogeneous dual junction coupled photocatalyst; and the removal rate of the homogenous-heterogeneous dual junction coupled photocatalyst to TC is 99.8% within 20 min, the problem that the heterojunction is limited by the influence of acid and alkalinity is solved, and the pH application range of the photocatalyst is widened.

The present disclosure provides a cold source transistor device, comprising: a substrate layer; a cold source layer, the cold source layer is arranged on the substrate layer; a strip layer, the strip layer is connected with the cold source layer and is prepared by the same material; a gate dielectric layer, part of the gate dielectric layer is formed on part of the cold source layer, and part of the gate dielectric layer covers part of the strip layer; a gate electrode, the gate electrode is arranged on the gate dielectric layer; wherein, the interface of the cold source layer and the strip layer is formed as a homojunction, and the gate dielectric layer covers the homojunction. The present disclosure also provides a preparation method of the cold source transistor device.

This invention discloses a two-dimensional van der Waals homogeneous structure with adjustable exchange bias, relating to the field of magnetic storage technology. The invention comprises a two-dimensional van der Waals ferromagnetic layer and a two-dimensional van der Waals antiferromagnetic layer stacked on top of each other. The thickness of both the ferromagnetic and antiferromagnetic layers is 2-200 nm, and the thickness ratio of the ferromagnetic and antiferromagnetic layers is x:(1-x), where x ranges from 0.1 to 0.9. The beneficial effect of this invention is that existing exchange bias methods are difficult to control in terms of bias magnitude. Even when an exchange bias can be induced, the magnitude of the exchange bias field cannot be controlled. This invention achieves and controls the exchange bias magnitude by adjusting the relative proportion of the thicknesses of the ferromagnetic and antiferromagnetic layers. The higher the proportion of the antiferromagnetic layer, the larger the exchange bias field.

The application discloses a defect layer modified TiO2 nanowire array photoanode and a preparation method thereof, and belongs to the technical field of photoelectrochemistry. 2 The Ti film is deposited on the surface of the NWAs by a magnetron sputtering method, and then annealing treatment is performed under a N2 atmosphere; during the annealing, Ti can capture O atoms in the TiO2 lattice to form a TiO2 defect layer containing oxygen vacancies on the surface, which helps to obtain a lower Fermi level; when a homojunction is formed between the defect layer and the main TiO2 nanowire, the Fermi levels tend to be balanced, thereby generating a built-in electric field, promoting the migration of photo-generated carriers and enhancing the utilization of light; the defect state concentration on the surface can be regulated by further regulating the Ti film deposition time and the annealing temperature and the like, so that the prepared photoanode has better PEC performance; the application provides an effective means for regulating the photoelectrocatalytic performance of TiO2 and also provides a theoretical basis for related applications.

The application belongs to the technical field of microscopic analysis, and particularly discloses a layered material transfer method suitable for scanning probe microscopic analysis, which comprises the following steps: flatly attaching a PDMS film to the surface of layered material to be transferred on an initial growth substrate to obtain a PDMS film / layered material / initial growth substrate, and then vacuumizing the obtained PDMS film / layered material / initial growth substrate; soaking the obtained PDMS film / layered material / initial growth substrate in deionized water, and then peeling the PDMS film / layered material from the initial growth substrate in the deionized water; picking up the obtained PDMS film / layered material and attaching the PDMS film / layered material to a target substrate to obtain a PDMS film / layered material / target substrate, and then vacuumizing the obtained PDMS film / layered material / target substrate; after heating the obtained PDMS film / layered material / target substrate, peeling the PDMS film while hot to obtain a layered material / target substrate, and realizing the transfer of a single layered material to the target substrate. Meanwhile, the application can also realize the preparation of high-quality layered material homojunctions or heterojunctions at interfaces.

This invention discloses a ZnIn2S4-MOF homojunction photocatalyst, its preparation method, and its applications. The process of this invention is simple, low-cost, and environmentally friendly. The prepared ZnIn2S4-MOF homojunction photocatalyst not only exhibits high stability but also demonstrates excellent photocatalytic hydrogen production performance, showing broad application prospects in the field of photocatalysis.

The invention belongs to the technical field of MOF catalysts, and particularly relates to a UiO-66 material with a micro-nano structure on the surface as well as a synthesis method and application of the UiO-66 material. The invention develops a simple and universal strategy to reasonably design the UiO-66 surface structure, a highly supersaturated synthetic solution is moderately diluted, secondary crystallization in a non-classical way is induced, and ultra-small crystal protrusions are generated on the outer surface of a seed crystal. The surface structures not only have high-index crystal faces and ligand deficiency defects, but also are induced to form enhanced interface homojunctions, so that CO2 and photo-induced electrons can be synergistically attracted. The key surface reaction on the modified sample is thus effectively accelerated, and the CO yield reaches six times that of the original seed crystal.

The invention discloses a tin-doped gallium nitride homojunction, a preparation method of the tin-doped gallium nitride homojunction and application of the tin-doped gallium nitride homojunction in beta-ray detection, and belongs to the technical field of semiconductor film materials. According to the method, the gallium oxide thin film is formed on the substrate through blade coating of the liquid gallium, then the tin-doped gallium oxide thin film is formed on the substrate through blade coating of the liquid tin-gallium alloy, and finally the tin-doped gallium nitride homojunction is obtained through nitriding treatment. The preparation process is simple, expensive equipment is not needed, the cost is low, when the prepared homojunction is used for a beta-ray detector, through electrode deposition and device packaging, the dark current can be remarkably reduced, the detection sensitivity to low-energy beta rays is improved, the response is rapid, the recovery time is short, the anti-radiation capability is high, the stability is excellent, stable work under the normal temperature condition can be achieved, and the application range is wide. And the application range is expanded.