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Coaxial homogeneous ZnO pn junction nanorod and preparation method thereof

A pn junction and nanorod technology, which is applied in the field of nanomaterial preparation, can solve the problems of inability to prepare ZnO coaxial and homogeneous pn junction nanorods, and achieve good application prospects, no environmental pollution, and reduced complexity.

Inactive Publication Date: 2013-05-01
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the technical problem that ZnO coaxial homogeneous pn junction nanorods cannot be prepared in the existing one-dimensional nanotechnology field, the present invention provides a ZnO coaxial homogeneous pn junction nanorods and a preparation method thereof, specifically:

Method used

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  • Coaxial homogeneous ZnO pn junction nanorod and preparation method thereof
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  • Coaxial homogeneous ZnO pn junction nanorod and preparation method thereof

Examples

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Effect test

Embodiment 1

[0022] The 5mM zinc nitrate solution and the 5mM hexamethylenetetramine solution were mixed at a volume ratio of 1:1 to a total of 150ml, and the mixed solution was heated to 80°C to obtain a zinc nitrate and hexamethylenetetramine mixed solution at 80°C.

[0023]Immerse the working electrode 3 made of ITO conductive glass, the reference electrode made of Ag and AgCl and the counter electrode made of Pt together in a mixed solution of zinc nitrate and hexamethylenetetramine at 80 ° C, and the working electrode potential Adjust to -0.8V relative to the reference electrode, keep the potential of the reference electrode and the working electrode 3 for electrodeposition for 1 hour, and obtain undoped zinc oxide nanorods on the ITO conductive glass substrate, that is, the working electrode 3 Array, the undoped ZnO nanorods, that is, the undoped ZnO region 1 of the ZnO coaxial homogeneous pn junction nanorods is n-type, and then the working electrode 3 of the undoped ZnO nanorod arra...

Embodiment 2

[0029] The 5mM zinc nitrate solution and the 5mM hexamethylenetetramine solution were mixed at a volume ratio of 1:1 to a total of 150ml, and the mixed solution was heated to 80°C to obtain a zinc nitrate and hexamethylenetetramine mixed solution at 80°C.

[0030] Immerse the working electrode 3 made of ITO conductive glass, the reference electrode made of Ag and AgCl and the counter electrode made of Pt together in a mixed solution of zinc nitrate and hexamethylenetetramine at 80 ° C, and the working electrode potential Adjust to -0.85V relative to the reference electrode, keep the potential of the reference electrode and the working electrode 3 for electrodeposition for 1.5 hours, and obtain undoped zinc oxide nanorods on the ITO conductive glass substrate, that is, the working electrode 3 Array, the undoped ZnO nanorods, that is, the undoped ZnO region 1 of the ZnO coaxial homogeneous pn junction nanorods is n-type, and then the working electrode 3 of the undoped ZnO nanorod...

Embodiment 3

[0036] The 5mM zinc nitrate solution and the 5mM hexamethylenetetramine solution were mixed at a volume ratio of 1:1 to a total of 150ml, and the mixed solution was heated to 80°C to obtain a zinc nitrate and hexamethylenetetramine mixed solution at 80°C.

[0037] Immerse the working electrode 3 made of ITO conductive glass, the reference electrode made of Ag and AgCl and the counter electrode made of Pt together in a mixed solution of zinc nitrate and hexamethylenetetramine at 80 ° C, and the working electrode potential Adjust to -0.92V relative to the reference electrode, keep the potential of the reference electrode and the working electrode 3 for electrodeposition for 0.5 hours, and obtain undoped zinc oxide nanorods on the ITO conductive glass substrate, that is, the working electrode 3 Array, the undoped ZnO nanorods, that is, the undoped ZnO region 1 of the ZnO coaxial homogeneous pn junction nanorods is n-type, and then the working electrode 3 of the undoped ZnO nanorod...

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Abstract

The invention provides a coaxial homogeneous ZnO pn junction nanorod and a preparation method thereof, in order to solve the technical problem that the coaxial homogeneous ZnO pn junction nanorod cannot be prepared in the field of one-dimensional nanomaterials. A non-doped ZnO area is arranged at one end of the coaxial homogeneous ZnO pn junction nanorod, and the rest of the coaxial homogeneous ZnO pn junction nanorod is an Sb doped ZnO area, wherein a doping concentration of Sb is 1-7at.%. The method has the significant characteristic that continuous epitaxial growth of an n-type non-doped ZnO area and a p-type Sb doped ZnO area is achieved by an electrochemical deposition method. The coaxial homogeneous ZnO pn junction nanorod can be prepared on a cold condition of 80 DEG C; in addition, equipment is simple; the cost is low; and references can be provided for preparing a nano photoelectric device.

Description

technical field [0001] The invention relates to the preparation technology of nanomaterials, in particular to a pn junction nanorod of one-dimensional nanomaterial by electrochemical method and its preparation method, in particular to a ZnO coaxial homogeneous pn junction nanorod and its preparation method. Background technique [0002] Zinc oxide (ZnO) is a new type II-VI direct bandgap wide bandgap semiconductor material, which has high thermal and chemical stability, is environmentally friendly, and can be prepared by various methods. ZnO has high exciton binding energy, which enables it to obtain efficient exciton luminescence at room temperature, so it has potential application value in the field of short-wave optoelectronic devices, and has become a hot topic in the field of semiconductor materials at home and abroad in recent years. [0003] In recent years, p-type ZnO doping theory and experiments have made a series of progress. At present, high-quality p-type ZnO wi...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B29/62C30B30/02C30B31/04
Inventor 苏海林梁金坤吴玉程黄荣俊
Owner HEFEI UNIV OF TECH
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