Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Two-dimensional transition metal chalcogenide homojunction photoelectric detector with perpendicular growth structure and preparation method therefor

A photodetector, vertical growth technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of difficult-to-peel nanosheets, substrate limitations, etc., and achieve the effects of strong repeatability, strong sensitivity, and simple preparation

Inactive Publication Date: 2016-06-01
HEFEI UNIV OF TECH
View PDF5 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the nanomaterials prepared by this method have high crystal quality, it is difficult to exfoliate nanosheets with large area sizes.
CVD synthesis of two-dimensional materials is a widely used technology at present, which can be used to synthesize large-area and large-size nanosheets. However, this method is limited by the substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Two-dimensional transition metal chalcogenide homojunction photoelectric detector with perpendicular growth structure and preparation method therefor
  • Two-dimensional transition metal chalcogenide homojunction photoelectric detector with perpendicular growth structure and preparation method therefor
  • Two-dimensional transition metal chalcogenide homojunction photoelectric detector with perpendicular growth structure and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Such as figure 1 As shown, the homojunction photodetector with the vertical growth structure in this embodiment is provided with a bottom electrode 2 on the upper surface of the insulating substrate 1, and a mask layer 3 is arranged on the upper surface of the bottom electrode 2; The center of 3 is provided with a through hole communicating with the bottom electrode 2; perpendicular to the upper surface of the bottom electrode 2, an N-type semiconductor material 4 in an array structure is grown in the through hole, and an array structure is grown on the N-type semiconductor material 4 The P-type semiconductor material 5, the N-type semiconductor material 4 and the P-type semiconductor material 5 form a PN homojunction; a top electrode 6 is arranged above the mask layer 3, and the top electrode 6 does not exceed the boundary of the mask layer 3 and completely covers Through holes; the bottom electrode 2 and the N-type semiconductor material 4 , and the top electrode 6 an...

Embodiment 2

[0040] The homojunction photodetector of this embodiment has the same structure as that of Embodiment 1, the only difference is that the semiconductor material is MoS 2 . Its preparation method is as follows:

[0041] a. After ultrasonically cleaning the silicon wafer with a thickness of 300nm of silicon oxide on the surface, a layer of Au electrode with a thickness of about 50nm is vapor-deposited on the surface by means of electron beams.

[0042] b. Evaporating a layer of Al on the Au electrode by pulsed laser deposition 2 o 3 The insulating layer acts as a mask layer, and makes the Al 2 o 3 The center of the insulating layer is left with a 6cm diameter via as MoS 2 The deposition area; the area of ​​the mask layer is about 4 / 5 of the Au electrode, and the thickness is about 200nm.

[0043] c. Attach a mask plate with a round hole in the middle on the silicon wafer where the Au electrode and insulating layer are evaporated. The position of the round hole corresponds t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a two-dimensional transition metal chalcogenide homojunction photoelectric detector with a perpendicular growth structure and a preparation method therefor. The protector is provided with a bottom electrode and a mask layer on the upper surface of an insulating substrate in sequence, wherein a through hole communicated with the bottom electrode is formed in the center of the mask layer; an N type semiconductor material perpendicular to the upper surface of the bottom electrode is growing in the through hole; a P type semiconductor material is growing on the N type semiconductor material; the N type semiconductor material and the P type semiconductor material are growing along a direction perpendicular to the bottom surface to form a PN homojunction; a top electrode is arranged above the mask layer; and the bottom electrode is in ohmic contact with the N type semiconductor material, the top electrode and the P type semiconductor material separately. The protector provided by the invention has the advantages of high response speed, high sensitivity, simple preparation, high repeatability, and the like.

Description

1. Technical field [0001] The invention relates to a two-dimensional transition metal chalcogenide homojunction photodetector with a vertical growth structure and a preparation method thereof, belonging to the technical field of semiconductor optoelectronic devices. 2. Background technology [0002] Photodetectors are one of the important devices in optoelectronic devices and are widely used in various fields such as optical communication, industrial detection and quantum communication. In recent years, with the rapid development of science and technology, detectors represented by nanometer photodetectors have attracted much attention due to their excellent characteristics such as high responsivity. Currently, retrieved reports mainly focus on one-dimensional nanomaterials and two-dimensional nanomaterials. For example, n-type doped zinc sulfide (ZnS) nanoribbons / wires have optical gains as high as 10 7 , but its longer carrier lifetime limits the response speed of the dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/103H01L31/032H01L31/18
CPCH01L31/032H01L31/103H01L31/18Y02P70/50
Inventor 于永强耿祥顺许克伟罗林保蒋阳吴春艳
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com