149 results about "Dark current" patented technology

A photonic random access memory employs series connected photosensors to define switching nodes driving optical modulators, the series connection operating to reduce the effect of photosensor dark current.

The application relates to a dual-wavelength silicon-based PIN photoelectric sensor with ultralow dark current and high responsivity, which comprises a silicon substrate, a central P + anode region, high resistance / intrinsic silicon absorption region, bottom N + cathode region, junction termination extension region JTE, guard ring GRL, surface passivation layer and electrode structure. Through accurate regulation of the junction edge electric field, the application effectively suppresses the leakage current and early breakdown phenomenon caused by the high edge electric field in the plane PIN structure, realizes sub-nanoampere dark current output, and simultaneously, through synergistic optimization of the intrinsic region thickness and the doping distribution, the sensor obtains higher light responsivity at two typical wavelengths of 660 nm and 940 nm, and meets the requirements of short-wave shallow absorption and long-wave deep absorption.

An X-ray detector comprising a semiconductor detector layer coupled with a light-emitting diode (LED) layer on the optical side. The detector features an X-ray-side electrode layer deposited on one side of the semiconductor detector layer and an optical-side electrode layer, such as transparent Indium Tin Oxide (ITO), on the opposite side. The semiconductor detector layer is composed of a high atomic number (Z) material with high density and electrical resistivity (around or larger than 106Q·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to guide the light generated in the LED layer to an optical detector.

This invention relates to the field of semiconductor technology, specifically to a molecular junction of a metal oxide semiconductor and its applications, wherein the molecular junction is composed of oxygen vacancies and hydroxyl groups, which are bonded to the same metal atom to form an oxygen vacancy-hydroxyl metal oxide molecular junction (Oxygen vacancy-hydroxyl metal oxide, V). O (-M-OH). The molecular junction of this invention can achieve efficient hole injection / transmission, optimize interface band arrangement, and effectively suppress dark current.

The application provides an avalanche photodiode focal plane array pixel gain simulation method and device, the method comprises the following steps: respectively under dark field conditions and light field conditions, a varying bias voltage is applied to an avalanche photodiode focal plane array, and a dark current response curve and a photocurrent response curve of an anode current of a pixel unit in the focal plane array are obtained respectively; under different bias voltages, a signal difference between the dark current response curve and the photocurrent response curve is extracted, and the pixel gain of the pixel unit is determined according to the signal difference. The pixel gain simulation method provided by the application can accurately obtain the pixel gain and is suitable for a silicon-based APD focal plane detector array with different pixel unit structures. In addition, the method can reveal the influence of internal electric field distribution changes caused by factors such as bias voltage on the array gain, thereby providing a theoretical basis and technical path for device optimization design in actual application scenarios.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

This application provides an isolation structure and its manufacturing method. The isolation structure includes a substrate, an isolation trench, a flexible dielectric layer, and a filling layer located within the substrate. The flexible dielectric layer is made of hydroxyl-para-xylene. The filling layer covers the surface of the flexible dielectric layer and fills the isolation trench. This flexible dielectric layer can reduce cracks caused by excessive stress in subsequent thermal processes and can adapt to spatial distortion caused by the expansion of residual gas in the isolation trench through deformation under thermal conditions, reducing damage to the substrate, enhancing the electron coupling ability of the HiK material, improving the yield of devices on the substrate, and reducing dark current in devices and white spots in display images from the source. In addition, this flexible dielectric layer does not contain metal, so it will not cause metal ion contamination to the substrate. It eliminates the need for an additional isolation layer, improving the performance of devices on the substrate while simplifying device structure and processes and reducing manufacturing costs.

The embodiment of the application provides a kind of based on integrating sphere light source's photosensitive diode multispectral calibration device and method, for by dark current measurement, photocurrent correction and wavelength response fitting, photosensitive diode array is carried out wide band multispectral calibration.The device of the application includes integrating sphere device, multi-band adjustable light source module, the photosensitive diode array to be calibrated and control and analysis unit;The inner wall of integrating sphere device is high reflectivity diffuse reflection material;Integrating sphere device further includes trap detector, and trap detector is used for real-time monitoring the reflection loss of the inner wall of integrating sphere device;Trap detector is connected with control and analysis unit communication;Multi-band adjustable light source module is accessed integrating sphere device;The photosensitive diode array to be calibrated is composed of multiple photosensitive diodes;Control and analysis unit and multi-band adjustable light source module, the photosensitive diode array to be calibrated establish communication connection.

This invention discloses a high-performance tin-based perovskite photodetector, its fabrication method, and its application in covert optical information transmission. The photodetector sequentially comprises a conductive substrate, an electron transport layer, a tin-based perovskite layer, a hole transport layer, and a metal electrode layer. The tin-based perovskite layer is FASnI3, and 1,4-butanediamine hydroiodate is introduced as a molecular additive to suppress Sn. 2+ Oxidation and reduction of defect state density optimize film quality. Based on this, FASnI3 perovskite films with an inverse opal structure were successfully prepared. The slow photon effect significantly enhances perovskite light absorption and promotes carrier transport, and the "lotus leaf effect" introduced by the photonic crystal significantly improves the stability of Sn-based perovskites. The photodetector prepared by this invention achieves highly sensitive, self-powered near-infrared detection under zero bias conditions, exhibiting high responsivity, high detectivity, low dark current, and excellent stability. It can be used in optical communication, information transmission, sensing, and security optoelectronic systems.

The application relates to the technical field of image sensors, and provides an image sensor and a manufacturing method.The image sensor comprises a semiconductor substrate, a plurality of pixel regions, a metal interconnection layer and a blocking structure.The blocking structure is composed of an isolation structure arranged in the semiconductor substrate, a crosstalk modulation structure and a first contact hole structure which are sequentially arranged in a dielectric layer and correspond to the isolation structure.The blocking structure can form an effective light blocking wall structure on one hand, preventing light of one pixel region from being reflected by the metal interconnection layer and crosstalking into an adjacent pixel region; and on the other hand, the blocking structure can prevent over-etching of the isolation structure during processing of the first contact hole structure, thereby reducing the enrichment and diffusion of charges in the isolation structure, effectively improving the dark current performance of the device, and simultaneously reducing optical crosstalk and electrical crosstalk of the image sensor, which is conducive to improving the imaging quality of the image sensor.

This invention relates to a method for amplifying the polarization ratio of a photodetector based on a two-dimensional semi-metallic material and a heterostructure, belonging to the field of photodetection technology. Based on a strategy combining a two-dimensional semi-metallic material and a heterostructure, a BP / MoS2 / WTe2 heterojunction is constructed, where BP is the light-absorbing layer, MoS2 is the barrier layer, and WTe2 is the contact layer. This invention not only achieves selective carrier transport and reduces dark current, but also allows WTe2 to reduce contact resistance and provide a fast carrier extraction channel, realizing asymmetric amplification of the photocurrent, thereby achieving active amplification of the polarization ratio even at zero bias. This invention breaks the limitation of the inherent anisotropy of materials on the magnitude of the polarization ratio, and uses a completely dry transfer process to fabricate polarization detection photodetectors, eliminating the need for additional polarization elements and chemical solution treatment. It boasts advantages such as simple process, low cost, high repeatability, and no pollution.

A system for generating a dark current residual image is configurable to generate a weighted average image by: (i) determining a region-based weight value for each pixel of an input image based upon a light level of a region in which the pixel lies; and (ii) combining the input image with a previous image using the region-based weight values for each pixel of the input image. The system is also configurable to generate a dark current residual image based upon the weighted average image.

The application provides a substrate voltage modulation type image sensor pixel unit, namely array, and an operation method. The pixel unit comprises a field effect tube and a triode, the doping type of the substrate of the field effect tube is the same as the doping type of the base of the triode, but is opposite to the doping type of the source and the drain of the field effect tube; the substrate of the field effect tube is connected with the base of the triode, the emitter of the triode is connected with one of the source and the drain of the field effect tube as the source of the image element, the collector of the triode is connected with the other of the source and the drain of the field effect tube as the drain of the image element, and the gate of the field effect tube is connected with an external voltage as the gate of the image element. The image sensor provided by the application can be applied to submicron pixels, has low dark current, low crosstalk, high signal-to-noise ratio, and the size of the image element can be reduced to 9F 2 and other characteristics.

The application provides a photoelectric detector and a manufacturing method thereof. The manufacturing method of the photoelectric detector comprises the following steps: providing an SOI substrate, wherein the SOI substrate comprises a lower substrate, an insulating buried layer and a semiconductor layer from bottom to top; forming a first insulating medium layer on the top surface and the sidewall of the semiconductor layer; removing the first insulating medium layer on the top surface of the semiconductor layer; forming a second insulating medium layer covering the semiconductor layer and the first insulating medium layer; etching part of the thickness of the second insulating medium layer by using a dry etching process to form an opening; etching the second insulating medium layer on the bottom wall of the opening by using a wet etching process to expose part of the top surface of the semiconductor layer; and forming a semiconductor absorption layer on the exposed semiconductor layer. The technical scheme of the application can improve the growth quality of the semiconductor absorption layer, thereby reducing the dark current of a silicon optical chip, improving the transmission bandwidth of the silicon optical chip and the like.

A photoelectric conversion device, a fabrication method, and an image sensor are disclosed. The device includes a substrate with at least two avalanche diode units. Each unit has a device region surrounded by a back-side deep trench isolation structure. At least one front-side trench isolation structure is disposed between any two adjacent units. A doped region, formed by outward diffusion from the front-side trench isolation structure, has a gradually decreasing doping concentration gradient. At least a portion of the doped region extends beyond the back-side deep trench isolation structure to form a dark current suppression region within each adjacent avalanche diode unit.

The present application relates to a kind of high-quality perovskite thick film and its preparation method and purposes, including the perovskite precursor solution of 95-105 ℃ supersaturation concentration is dropped to substrate, with different slit height scraper, with different speed is carried out multiple steps of doctoring, through specific process, it is difficult to control perovskite film thickness in prior art and the technical problem that perovskite thick film defect density is high and causes radiation detector to have higher dark current density, perovskite thick film preparation can be flexibly, conveniently, obtained with low defect density, high density, high uniformity perovskite thick film, the present application has the advantages of low cost, preparation is convenient, can be produced in large area etc., required temperature is below 200 ℃, especially doctoring and annealing process can be completed in atmospheric environment, it is conducive to industrial production.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

Manufacturing a detector device such as a microchannel plate (MCP) includes using a first atomic layer deposition (ALD) process with first precursor materials to deposit a resistive layer on a substrate and thereby form a resistive-coated substrate, the first precursor materials including a conductive rhenium material and an insulative aluminum material. The resistive layer is deposited as interspersed conductive and insulative regions of a rhenium constituent and an aluminum constituent respectively in a predetermined ratio. A second ALD process with second precursor materials is used to deposit an emissive layer on the resistive-coated substrate, the emissive layer being constituted to generate electrical carriers in use of the detector device to be sensed by external sensing circuitry as detected events. The first ALD process is performed at a deposition temperature sufficiently above 200° C. to obtain a dark-current contribution of the resistive layer of less than about 600 Hz / cm2.

Provided is a photoelectric conversion element comprising a first electrode film (A), a photoelectric conversion layer (B), an auxiliary layer (C) that includes a compound α, and a second electrode film (D), wherein a change rate rd3 represented by formula (i) is 0.020-50.0. Formula (i): rd3=d3a / d3b. In the formula, d3a is a dark current (external bias 3V) after heat treatment under the following conditions, and d3b is a dark current (external bias 3V) without heat treatment. The conditions are that heating is performed for 1-3000 minutes at not lower than 450°C below a reference temperature and not higher than 10°C below the reference temperature, the reference temperature being a 5% mass reduction temperature of the compound α as measured at a pressure of 0.10 MPa, with nitrogen at 200 mL / min, a temperature of 20-550°C, and a temperature increase rate of 10°C / min.

This invention discloses a stable perovskite material based on DMePDA additive and its preparation method. The method involves introducing the diamine cation DMePDAI2 into the FAMAPbI3 system to construct a DJ-type quasi-two-dimensional perovskite structure. Due to the presence of diamine double-terminal —NH3 in the system… + Bonding to inorganic layers eliminates van der Waals gaps in the RP structure and shortens interlayer spacing, effectively weakening the quantum confinement of the material, thus suppressing ion migration while maintaining effective charge transport. This invention utilizes different material ratios in the perovskite system to establish DMePDA (FA) 0.5 MA 0.5 ) n‑1 Pb n I 3n +1 By controlling the n-value of the material to create a network, the carrier mobility of the high-n-through-network is significantly improved. X-ray detectors fabricated using this material exhibit extremely low dark current density and excellent X-ray sensitivity under low / medium bias. This invention achieves a comprehensive improvement in the low dark current, high sensitivity, and low mobility of perovskite materials, providing a stable and scalable material and process foundation for low-dose, high-resolution X-ray imaging.

This invention discloses a portable scanning device and method based on AI recognition, relating to the field of image scanning technology. The method includes: S1, periodically acquiring scanning imaging data and performing preprocessing on the data; S2, determining the imaging state based on the preprocessed data, and when the device is in a drift-triggered state, evaluating the degree of multi-source drift during the scanning imaging process and determining the drift level based on the evaluation result; S3, performing graded parameter correction according to the drift level; and S4, executing imaging control commands and continuously evaluating the degree of multi-source drift during the scanning imaging process based on the data after command execution, determining whether to repeat parameter correction, and realizing a closed-loop compensation control for scanning imaging. This solves the problem that existing devices lack online drift calibration and temperature drift compensation, leading to light source attenuation, dark current drift of the photosensitive chip, and power supply voltage fluctuations after prolonged use.

This invention belongs to the field of optical technology. It provides a method and system for improving the power monitoring range of a photodetector in an optical chip. The method involves: acquiring the optical signal from the optical chip using a photodetector; turning off the light source and applying a zero-voltage bias to the photodetector to minimize dark current, recording the acquired dark current for dark current calibration; turning on the light source and acquiring the photocurrent signal from the photodetector; calculating the optical power based on the responsivity of the photodetector material, the dark current, and the photocurrent signal; and controlling the temperature of the entire optical chip within a set range throughout the process. This invention only requires a photodetector with a zero-voltage bias. By controlling the local temperature to reduce the fluctuation of the dark current and combining this with the material's responsivity analysis, the measured current signal can be directly used to monitor the corresponding optical signal, thus achieving wide-range optical power monitoring.

This invention provides an image sensor, a pixel structure, and a method for manufacturing the same. The pixel structure includes a photoelectric conversion region disposed in a semiconductor substrate and a conductive plate disposed above it. The conductive plate covers a first region of the photoelectric conversion region and induces a hole accumulation layer on its surface by receiving a bias signal, achieving electrical pinning. A doped pinning layer is disposed in a second region outside the projection range of the conductive plate, achieving physical pinning, wherein the doping concentration of the surface doping profile of the first region is lower than that of the second region. Through the synergistic effect of electric field modulation and doping modulation, a stable potential distribution is formed on the surface of the photoelectric conversion region, effectively suppressing dark current. Because high-concentration doping is avoided in the first region, the impact of doping compensation on the potential well is reduced, thereby maintaining a large charge storage space even under pixel miniaturization conditions, improving the full-well capacity and the dynamic range and signal-to-noise ratio of the image sensor.

The application relates to a semiconductor chip and a manufacturing method thereof, which comprises a chip substrate 1 and an electro-absorption modulator EAM 2 arranged on the chip substrate 1; the electro-absorption modulator EAM 2 comprises a first substrate 201, a support column 202, a first active region 203 and a first upper waveguide region 204 arranged in sequence from bottom to top; the width of the support column 202 and the width of the first upper waveguide region 204 are both smaller than the width of the first active region 203. The application can effectively inhibit the deterioration of the sidewall to the electrical and optical properties, improve the bandwidth of the chip, reduce the interface dark current and defects, reduce the light loss of the chip and improve the light output power of the chip under the condition of reducing the reverse PN junction area.

The application relates to the field of new energy technology, in particular to a ZnO NRs-based Schottky junction ultraviolet photodetector based on ZnAl-LDHs and a preparation method thereof. The ZnO NRs-based Schottky junction ultraviolet photodetector comprises, from bottom to top, a conductive glass substrate, a ZnO film, a ZnO NRs film, a ZnAl-LDHs film and an interdigital electrode, the thickness of the ZnO film is 200-300 nm, the thickness of the ZnO NRs film is 0.5-1.5 microns, and the thickness of the ZnAl-LDHs film is 30-50 nm. The ZnO NRs / ZnAl-LDHs has strong light absorption capacity, realizes wider spectrum and higher efficiency of ultraviolet light absorption, and greatly improves the light absorption efficiency. The defect states on the surface of the ZnO NRs are inhibited by the ZnAl-LDHs, the dark current is significantly reduced, the signal-to-noise ratio and the detection rate are improved, and the rectification characteristics and the built-in electric field are enhanced.

This invention discloses an on-chip integrated two-dimensional van der Waals heterojunction high-speed photodetector and its fabrication method, comprising: a substrate constructed sequentially from bottom to top; an optical waveguide; a heterojunction composed of stacked graphene and black phosphorus layers; metal electrodes respectively contacting the graphene and the black phosphorus; and an alumina layer covering the surfaces of the black phosphorus and graphene layers for protection. This invention achieves an operating bandwidth greater than 40 GHz, significantly improving the applicability of the photodetector in high-speed communication and high-frequency signal processing, meeting the performance requirements of future ultra-high-speed optoelectronic systems. By optimizing the black phosphorus and graphene heterojunction structure, dark current is suppressed to the microampere level, while a high responsivity of 18 mA / W is achieved at a wavelength of 1.55 μm, providing high-sensitivity photodetection capability. By covering the channel material surface of the device with an alumina protective layer, the environmental adaptability and long-term operational stability of the heterojunction are significantly improved, ensuring high reliability and stability of the device under complex environmental conditions.

The application belongs to the technical field of photoelectric detectors, and discloses a preparation method of t-Se / Si and BP / t-Se / Si heterojunction photodetectors. First, a few-layer black phosphorus nanosheet dispersion liquid is prepared, then a trigonal selenium film is deposited on a silicon substrate to construct a t-Se / Si composite structure, and then black phosphorus nanosheets are spin-coated to form a BP / t-Se / Si heterojunction. Electrodes are prepared on the two structures respectively to obtain t-Se / Si and BP / t-Se / Si unit detectors with significantly different photoelectric response characteristics. The two units are arranged and integrated according to a preset pattern to form a patterned detector array. The array has wide spectral response and low dark current characteristics under zero bias, and can be used for non-contact displacement monitoring of precision instruments.

The application discloses a PON distributed intelligent computing task scheduling method and belongs to the technical field of optical access network communication technology. The application obtains the link attenuation coefficients of each optical network unit through an optical line terminal and broadcasts; the allocation information of a differential double-wavelength channel and a gradient vector is established and broadcasted; a differential double-wavelength mapping is used to allocate target optical power to gradient components, and each unit is instructed to transmit after compensation in combination with the attenuation coefficients; optical signals are received on the differential double-wavelength channel and are converted into photoelectric current, and a global gradient vector is constructed after dark current is eliminated; the maximum value of the net photoelectric current difference value is counted to adaptively update the mapping coefficients and broadcast, and the global model parameters are updated and issued to each unit to complete synchronization. The application solves the problems of communication bottlenecks in the existing gradient aggregation and a large dynamic range of optical signal power.

The present disclosure relates to a data processing method for a detector of a medical device, which includes: obtaining a plurality of dark current values of at least one detector channel of a detector within a preset time period, adjusting the plurality of dark current values based on a preset scanning precision to determine a plurality of adjusted dark current values, and determining a dark current compensation value corresponding to the at least one detector channel based on the plurality of adjusted dark current values.