391 results about "Dark current" patented technology

The invention relates to a method for verifying a Mars sky radiance simulation result based on a Mars real-shot photo, and belongs to the technical field of Mars sky background radiance. Comprises: image acquisition; performing radiation calibration; correcting dark current; performing flat field correction; converting a radiation value; and geometric correction. The Mars sky radiance simulation method breaks through the dependence of an existing model on idealized hypothesis, performs dynamic verification by using actual shot image data, remarkably improves the authenticity and reliability of a Mars sky radiance simulation result, and effectively solves the problem of systematic deviation under a specific wave band; by constructing a complete process from image acquisition, radiation calibration, geometric modeling to brightness inversion and comparison verification, dynamic feedback and closed-loop correction of a theoretical radiation model are realized, model adaptability is improved, and fine modeling under multi-temporal and multi-meteorological conditions is supported; the method can be applied to an existing Mars rover navigation camera and an image processing link of the Mars rover navigation camera, does not need additional modification, has good engineering practicability and task compatibility, and is convenient to popularize and apply.

The invention belongs to the technical field of image processing, and particularly relates to an intelligent agricultural product pesticide residue detection method and system based on a spectrum technology, and the method comprises the steps: obtaining the hyperspectral reflectivity according to the original hyperspectrum, dark current and whiteboard image data; calculating an illumination confidence factor by using the average spectral intensity; performing linear scaling on the obtained standard biological matrix background spectrum according to the illumination confidence factor to obtain a local background estimated value and obtain a net residual spectrum; generating a pesticide residue distribution thermodynamic diagram by combining the cosine similarity of the net residual spectrum and the target pesticide standard fingerprint spectrum and the noise suppression weight based on the illumination confidence factor; and pesticide residue detection is carried out according to the statistical characteristics of the connected region of the suspected defect mask. Through adaptive background deduction and noise suppression, the problems of uneven curved surface illumination and strong background interference are solved, and the detection accuracy is improved.

The invention provides a polarization hyperspectral water quality monitoring system and method, and the system comprises a tower footing polarization hyperspectral imaging module which is disposed on a building beside a to-be-detected water area, and carries out the area array staring scanning of the to-be-detected water area through a polarization hyperspectral imager, so as to obtain a water body polarization hyperspectral image signal of the to-be-detected water area; the image spectral data processing module is used for deducting dark current and spurious signals from the water body polarization hyperspectral image signals, and calculating the water body spectral reflectivity of the water area to be measured according to the water body polarization hyperspectral image signals by combining a gray value and reflectivity relation model constructed by using the hyperspectral image signals of the gray scale calibration plate; and the water quality parameter spatial distribution inversion module is used for performing inversion on the to-be-detected water quality parameters of the to-be-detected water area according to a pre-constructed water quality parameter inversion model and the water body spectral reflectivity. According to the technical scheme, the integration level is high, the automation degree is high, rapid deployment can be achieved, and all-day continuous unattended monitoring can be achieved.

The invention provides a distributed optical fiber temperature measurement method and device, electronic equipment and a storage medium, and belongs to the technical field of optical fiber detection. Multi-dimensional data acquisition including light source power fluctuation data, detector dark current data, optical fiber loss distribution data and environment temperature and humidity data is realized; preprocessing the collected multi-dimensional data, constructing a light source power drift model and a detector sensitivity drift model, and fitting model parameters; and calculating a corresponding error correction coefficient based on the light source power drift model and the detector sensitivity drift model, correcting the ratio of anti-Stokes light intensity to Stokes light intensity of Raman scattering in combination with a dynamic correction result of an optical fiber attenuation coefficient by environment temperature and humidity data, and outputting calibration temperature data. Therefore, on the basis of the Raman scattering technology, light source power fluctuation and detector sensitivity drift core errors are eliminated through a multi-dimensional error compensation model, and the temperature measurement precision is improved.

The invention relates to the technical field of micro-nano processing of semiconductor devices, in particular to an InAs / GaSb class-II superlattice mesa wet etching solution and a using method thereof, the etching solution is an aqueous solution comprising citric acid, phosphoric acid and hydrogen peroxide, the citric acid is citric acid monohydrate, the mass concentration of the phosphoric acid is 85%, and the mass concentration of the hydrogen peroxide is 30%. By optimizing the proportion of the components of the corrosive liquid and introducing an adjustable corrosion time sequence and a post-treatment technique, high repeatability and high uniformity of the corrosion process can be realized on the premise of keeping the intrinsic electrical properties of the material, the morphology quality of the mesa structure can be remarkably improved, and the smooth and low-damage mesa side wall and surface can be obtained. The method lays a reliable process foundation for preparing a high-performance InAs / GaSb class-II super-crystal-based infrared detector, is particularly beneficial to suppressing electric leakage of the side wall of a device, reduces dark current, and finally improves the quantum efficiency and imaging performance of the device.

The invention provides a mesa side wall passivation method for a class-II superlattice infrared detector and the infrared detector, and belongs to the field of semiconductor manufacturing. The problems of high interface state density and large dark current caused by a natural oxide layer rich in Sb2O5 formed by exposing the side wall of the aluminum antimonide or arsenic aluminum antimonide barrier layer to the atmosphere are solved; the method comprises the following steps of: cleaning and drying a second-class superlattice infrared detector chip subjected to mesa etching, and then loading the second-class superlattice infrared detector chip into a sample cavity of ALD (Atomic Layer Deposition) equipment; vacuumizing and heating; introducing high-purity hydrogen into a remote plasma source, starting the remote plasma source, selectively reducing the unstable natural oxide layer on the surface of the side wall of the barrier layer of the chip into volatile gas through hydrogen plasma, and pumping away the volatile gas through a vacuum system; after hydrogen plasma treatment is finished, a gas path is switched to an ALD precursor to form a passive film on the side wall of the barrier layer; cooling and taking the sheet; the invention is applied to the infrared detector.

A system for generating a dark current residual image is configurable to generate a weighted average image by: (i) determining a region-based weight value for each pixel of an input image based upon a light level of a region in which the pixel lies; and (ii) combining the input image with a previous image using the region-based weight values for each pixel of the input image. The system is also configurable to generate a dark current residual image based upon the weighted average image.

The embodiment of the present application discloses an image sensor and an electronic information device for improving full well capacity. The image sensor comprises: a photodiode formed in a semiconductor substrate; the photodiode comprises at least a first doped layer, a second doped layer and a columnar third doped region; the second doped layer wraps the side and bottom of the third doped region; the first doped layer wraps the side and bottom of the second doped layer; the first doped layer and the second doped layer form a first lateral PN junction; the second doped layer and the third doped region form a second lateral PN junction; wherein the first doped layer and the third doped region have the same conductivity type, and the conductivity type is opposite to that of the second doped layer. The embodiment of the present application replaces the central part of the photodiode with a columnar ion doped region (for example, a P-type layer), so that the image sensor with the epitaxial structure can effectively improve the full well capacity, effectively reduce the depletion potential of the center of the photodiode, avoid the occurrence of lag, and reduce the dark current.

The application discloses a kind of photovoltaic module dark current testing device, it is related to dark current detection device technical field, the detection device includes workbench, workbench is placed with cabinet, multiple drawers are slidably installed on cabinet, multiple current detection modules are evenly installed in drawer, workbench is installed with host computer, host computer is electrically connected with current detection module, temperature and humidity control assembly is provided on the cabinet, temperature and humidity control assembly adjusts the temperature and humidity inside cabinet, when drawer is completely pushed into cabinet, darkroom for accommodating photovoltaic module is formed, meet the lightless environment requirement of photovoltaic module dark current test, improve detection precision, host computer as the overall control unit of device forms the closed-loop control of "instruction issue-data acquisition-result feedback", display screen connected with host computer real-time display test state, real-time parameter and test result, replace artificial reading judgment, reduce error.

The invention discloses a long-wave infrared detector based on electric field intensity distribution regulation and control and a preparation method, and relates to the technical field of semiconductors, the long-wave infrared detector comprises a substrate, a bottom contact layer, a hole barrier layer, an absorption layer, an electron barrier layer and a top contact layer which are sequentially arranged from bottom to top; wherein the bottom contact layer and the hole barrier layer adopt an InAs / GaSb / AlSb / GaSb superlattice structure; the absorption layer, the electron barrier layer and the top contact adopt an InAs / GaSb superlattice structure; the doping concentration of the absorption layer is greater than the doping concentration of the hole barrier layer and the electron barrier layer. The doping concentration of the absorption layer is set to be greater than that of the barrier layer, so that the width of a depletion region of the absorption layer is reduced, the depletion region deviates towards the barrier layer, the probability of SRH recombination is reduced, G-R current can be effectively inhibited, and the overall dark current level is reduced.

A photonic random access memory employs series connected photosensors to define switching nodes driving optical modulators, the series connection operating to reduce the effect of photosensor dark current.

The application relates to a dual-wavelength silicon-based PIN photoelectric sensor with ultralow dark current and high responsivity, which comprises a silicon substrate, a central P + anode region, high resistance / intrinsic silicon absorption region, bottom N + cathode region, junction termination extension region JTE, guard ring GRL, surface passivation layer and electrode structure. Through accurate regulation of the junction edge electric field, the application effectively suppresses the leakage current and early breakdown phenomenon caused by the high edge electric field in the plane PIN structure, realizes sub-nanoampere dark current output, and simultaneously, through synergistic optimization of the intrinsic region thickness and the doping distribution, the sensor obtains higher light responsivity at two typical wavelengths of 660 nm and 940 nm, and meets the requirements of short-wave shallow absorption and long-wave deep absorption.

A LiGa-based 0.5 In 0.5 A self-driven X-ray detector based on Se2 crystal and its fabrication method. This detector employs an MSM device structure with c-plane LiGa... 0.5 In 0.5 Using Se2 wafers as semiconductor materials and metal materials as electrodes, self-driven X-ray detection can be achieved under zero bias voltage; the above-mentioned self-driven X-ray detector fabrication method includes the following steps: (1) fabricating LiGa 0.5 In 0.5 (1) Se2 crystal; (2) Directional processing of c-plane LiGa 0.5 In 0.5 Se2 wafer; (3) LiGa 0.5 In 0.5 The upper and lower surfaces of the Se2 wafer are polished and passivated; (4) in LiGa 0.5 In 0.5 Metal electrodes are deposited on the upper and lower surfaces of a Se2 wafer. This invention utilizes LiGa... 0.5 In 0.5 The bulk photovoltaic effect generated by the non-centrosymmetric structure of Se2 enabled the fabrication of a self-driven X-ray detector with a simple structure. Furthermore, due to the LiGa... 0.5 In 0.5 Se2 crystals have high resistivity, and the devices fabricated from them have low dark current, enabling highly sensitive X-ray detection.

The embodiment of the invention provides an optical detection circuit, an optical detection chip, an optical sensor and electronic equipment. The optical detection circuit comprises a signal processing unit, an optical detection unit and a voltage applying unit, the voltage applying unit is used for applying dark current detection voltage to the photodiode, so that the photodiode outputs a dark current detection signal to the signal processing unit based on the dark current detection voltage, and the signal processing unit generates a reference signal based on the dark current detection signal; the signal processing unit is used for receiving an induction signal generated by the photodiode in response to light irradiation after the voltage applying unit applies the optical detection voltage to the photodiode, and generating an optical detection signal according to the induction signal; and the optical detection unit is used for performing optical detection according to the optical detection signal and the reference signal. According to the optical detection circuit, the dark current of the photodiode can be detected in real time before optical detection, so that the accuracy of optical detection is improved.

Provided is a light receiving element capable of enhancing accuracy of measurement of color mixing components contained in output signals of light shielding pixels located around a light receiving pixel. A peripheral pixel region has a specific pixel group including a light receiving pixel and light shielding pixels surrounding the light receiving pixel. A first conductivity type region corresponding to the light receiving pixel and the light shielding pixels of the specific pixel group is made lower in concentration of a first conductivity type impurity than a first conductivity type region corresponding to an effective pixel located in an effective pixel region. Since the concentration of the first conductivity type impurity of the specific pixel group (the light receiving pixel and the light shielding pixels) is low, it is possible to weaken a pn junction strength and suppress dark current in the light receiving pixel and the light shielding pixels. It is therefore possible to reduce noise contained in the output signals of the light shielding pixels and enhance the accuracy of measurement of the color mixing components included in the output signals of the light shielding pixels.

An X-ray detector comprising a semiconductor detector layer coupled with a light-emitting diode (LED) layer on the optical side. The detector features an X-ray-side electrode layer deposited on one side of the semiconductor detector layer and an optical-side electrode layer, such as transparent Indium Tin Oxide (ITO), on the opposite side. The semiconductor detector layer is composed of a high atomic number (Z) material with high density and electrical resistivity (around or larger than 106Q·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to guide the light generated in the LED layer to an optical detector.

The invention provides a thermal infrared imager dark current compensation method and device, and the method comprises the steps: obtaining the change data of a target parameter of each pixel in a detector of a thermal infrared imager along with the change of the temperature, and generating a target corresponding relation table containing the target parameter-temperature corresponding relation of each pixel based on the change data, the target parameter-temperature corresponding relation is matched with the dark current-temperature corresponding relation; when the thermal infrared imager measures the temperature, a first target parameter generated by the dark pixel is obtained; determining the temperature corresponding to the current dark pixel in a target corresponding relation table based on the first target parameter; determining the temperature distribution of all the pixels on the detector by combining the current temperature of the dark pixel and the heat transfer characteristics of the detector and the pixels; determining a second target parameter representing the current generation of each pixel in a target corresponding relation table according to the temperature distribution; and correcting the current temperature measurement result of the pixel according to the second target parameter of each pixel.

This invention relates to the field of semiconductor technology, specifically to a molecular junction of a metal oxide semiconductor and its applications, wherein the molecular junction is composed of oxygen vacancies and hydroxyl groups, which are bonded to the same metal atom to form an oxygen vacancy-hydroxyl metal oxide molecular junction (Oxygen vacancy-hydroxyl metal oxide, V). O (-M-OH). The molecular junction of this invention can achieve efficient hole injection / transmission, optimize interface band arrangement, and effectively suppress dark current.

The application provides an avalanche photodiode focal plane array pixel gain simulation method and device, the method comprises the following steps: respectively under dark field conditions and light field conditions, a varying bias voltage is applied to an avalanche photodiode focal plane array, and a dark current response curve and a photocurrent response curve of an anode current of a pixel unit in the focal plane array are obtained respectively; under different bias voltages, a signal difference between the dark current response curve and the photocurrent response curve is extracted, and the pixel gain of the pixel unit is determined according to the signal difference. The pixel gain simulation method provided by the application can accurately obtain the pixel gain and is suitable for a silicon-based APD focal plane detector array with different pixel unit structures. In addition, the method can reveal the influence of internal electric field distribution changes caused by factors such as bias voltage on the array gain, thereby providing a theoretical basis and technical path for device optimization design in actual application scenarios.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

The objective is to provide a condensed polycyclic aromatic compound that serves as an organic photoelectric conversion material with excellent external quantum yield (EQE), dark current, and response speed when used as a photoelectric conversion element, as well as a material for a photoelectric conversion element, an organic thin film, and an organic photoelectric conversion element using the same. [Solution] The following formula (1) provides a condensed polycyclic aromatic compound. [Formula 1] TIFF2026071189000011.tif21170

This application provides an isolation structure and its manufacturing method. The isolation structure includes a substrate, an isolation trench, a flexible dielectric layer, and a filling layer located within the substrate. The flexible dielectric layer is made of hydroxyl-para-xylene. The filling layer covers the surface of the flexible dielectric layer and fills the isolation trench. This flexible dielectric layer can reduce cracks caused by excessive stress in subsequent thermal processes and can adapt to spatial distortion caused by the expansion of residual gas in the isolation trench through deformation under thermal conditions, reducing damage to the substrate, enhancing the electron coupling ability of the HiK material, improving the yield of devices on the substrate, and reducing dark current in devices and white spots in display images from the source. In addition, this flexible dielectric layer does not contain metal, so it will not cause metal ion contamination to the substrate. It eliminates the need for an additional isolation layer, improving the performance of devices on the substrate while simplifying device structure and processes and reducing manufacturing costs.

The embodiment of the application provides a kind of based on integrating sphere light source's photosensitive diode multispectral calibration device and method, for by dark current measurement, photocurrent correction and wavelength response fitting, photosensitive diode array is carried out wide band multispectral calibration.The device of the application includes integrating sphere device, multi-band adjustable light source module, the photosensitive diode array to be calibrated and control and analysis unit;The inner wall of integrating sphere device is high reflectivity diffuse reflection material;Integrating sphere device further includes trap detector, and trap detector is used for real-time monitoring the reflection loss of the inner wall of integrating sphere device;Trap detector is connected with control and analysis unit communication;Multi-band adjustable light source module is accessed integrating sphere device;The photosensitive diode array to be calibrated is composed of multiple photosensitive diodes;Control and analysis unit and multi-band adjustable light source module, the photosensitive diode array to be calibrated establish communication connection.

The utility model relates to a deep ultraviolet photoelectric detector with an ultra-wide bandgap semiconductor heterojunction structure. The deep ultraviolet photoelectric detector comprises a substrate, a DBR layer, a Zn-doped beta-Ga2O3 layer, a barrier layer, a Ga-doped gamma-GeO2 layer and a current collection layer, the DBR layer is configured on the substrate, the Zn-doped beta-Ga2O3 layer is configured on the DBR layer, the barrier layer is configured on the Zn-doped beta-Ga2O3 layer, the Ga-doped gamma-GeO2 layer is configured on the barrier layer, and the current collection layer is configured on the Ga-doped gamma-GeO2 layer; the Zn-doped beta-Ga2O3 layer is an N-type semiconductor, the Ga-doped gamma-GeO2 layer is a P-type semiconductor, and the Zn-doped beta-Ga2O3 layer and the Ga-doped gamma-GeO2 layer form a P-N heterojunction; by arranging the Zn-doped beta-Ga2O3 layer and the Ga-doped gamma-GeO2 layer, the photoelectric conversion efficiency is good; the beta-Ga2O3 is favorable for enhancing the response to an ultraviolet wave band; gamma-GeO2 has a wide light absorption range, and the combination of gamma-GeO2 and gamma-GeO2 can improve the sensitivity and photoelectric conversion efficiency of the deep ultraviolet photoelectric detector; by arranging the P-N heterojunction, the photoelectric conversion efficiency is improved, the dark current is effectively reduced, the detection noise is reduced, and the signal-to-noise ratio is improved.

The invention discloses a cold background point target application-oriented infrared detector test evaluation method, which comprises the following steps of: according to radiation characteristics of an actual background and a target, camera parameters and infrared detector test system parameters, enabling a cold background and a cold background superposition point target to be equivalent to a surface source black body temperature tested by an infrared detector; and the performance of the infrared detector is tested and evaluated in the cold background infrared detector test cold cabin. The cold cabin is connected with the focal plane refrigeration and temperature measurement and control module, the black body refrigeration and temperature measurement and control module, the acquisition module and the vacuum pump, and can provide high-vacuum low-background test conditions for extremely low dark current and various photoelectric properties of the high-sensitivity infrared detector. The infrared detector performance parameters obtained by the method can provide test data support for actual performance evaluation of the cold background point target detection camera.

This invention discloses a high-performance tin-based perovskite photodetector, its fabrication method, and its application in covert optical information transmission. The photodetector sequentially comprises a conductive substrate, an electron transport layer, a tin-based perovskite layer, a hole transport layer, and a metal electrode layer. The tin-based perovskite layer is FASnI3, and 1,4-butanediamine hydroiodate is introduced as a molecular additive to suppress Sn. 2+ Oxidation and reduction of defect state density optimize film quality. Based on this, FASnI3 perovskite films with an inverse opal structure were successfully prepared. The slow photon effect significantly enhances perovskite light absorption and promotes carrier transport, and the "lotus leaf effect" introduced by the photonic crystal significantly improves the stability of Sn-based perovskites. The photodetector prepared by this invention achieves highly sensitive, self-powered near-infrared detection under zero bias conditions, exhibiting high responsivity, high detectivity, low dark current, and excellent stability. It can be used in optical communication, information transmission, sensing, and security optoelectronic systems.

The invention discloses a photoelectric detector based on two-dimensional / three-dimensional perovskite lamination and a preparation method thereof, and belongs to the technical field of photoelectric detectors. The photoelectric detector is composed of a heterojunction structure, an electron transport layer, a hole transport layer, a transparent electrode and a metal electrode, wherein the heterojunction structure is prepared by combining MAPbI3 perovskite thin single crystals and two-dimensional BA2PbI4, and the electron transport layer, the hole transport layer, the transparent electrode and the metal electrode are located on the two sides. According to the method, an opening is controlled through silica gel sealing on a perovskite thin single crystal growth device, a solvent is slowly volatilized at a certain temperature to prepare seed crystal grains, then the temperature is increased for continuous growth until the size is proper, and single crystal preparation is completed. According to the method, the MAPbI3 perovskite single crystal with good crystallinity and regular morphology and the BA2PbI4 thin crystal which grows rapidly and is prepared uniformly can be prepared, the acetonitrile and the BA2PbI4 can doubly passivate MAPbI3, and the obtained detector can effectively reduce dark current and obtain good photoelectric detection performance.

The application relates to the technical field of image sensors, and provides an image sensor and a manufacturing method.The image sensor comprises a semiconductor substrate, a plurality of pixel regions, a metal interconnection layer and a blocking structure.The blocking structure is composed of an isolation structure arranged in the semiconductor substrate, a crosstalk modulation structure and a first contact hole structure which are sequentially arranged in a dielectric layer and correspond to the isolation structure.The blocking structure can form an effective light blocking wall structure on one hand, preventing light of one pixel region from being reflected by the metal interconnection layer and crosstalking into an adjacent pixel region; and on the other hand, the blocking structure can prevent over-etching of the isolation structure during processing of the first contact hole structure, thereby reducing the enrichment and diffusion of charges in the isolation structure, effectively improving the dark current performance of the device, and simultaneously reducing optical crosstalk and electrical crosstalk of the image sensor, which is conducive to improving the imaging quality of the image sensor.

The embodiment of the invention provides an avalanche photodiode, a photoelectric detection chip and optical communication equipment, relates to the technical field of photoelectric conversion devices, and aims to solve the problems of relatively large noise and dark current in a waveguide type avalanche photodiode. The avalanche photodiode comprises a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer comprises a waveguide part and a device part which are arranged in a first direction; in a second direction perpendicular to the first direction, the device part comprises a first ohmic contact region, a first charge region, a first multiplication region, a second charge region and a second ohmic contact region which are arranged in sequence; the first charge region, the second charge region and the first ohmic contact region are all P-type doped regions, the second ohmic contact region is an N-type doped region, and the first multiplication region is an intrinsic region. The second semiconductor layer is arranged on one side of the first semiconductor layer and is in contact with the first charge region; the light-emitting diode is used for absorbing incident light to generate photon-generated carriers. The avalanche photodiode can be applied to optical communication.

This invention relates to a method for amplifying the polarization ratio of a photodetector based on a two-dimensional semi-metallic material and a heterostructure, belonging to the field of photodetection technology. Based on a strategy combining a two-dimensional semi-metallic material and a heterostructure, a BP / MoS2 / WTe2 heterojunction is constructed, where BP is the light-absorbing layer, MoS2 is the barrier layer, and WTe2 is the contact layer. This invention not only achieves selective carrier transport and reduces dark current, but also allows WTe2 to reduce contact resistance and provide a fast carrier extraction channel, realizing asymmetric amplification of the photocurrent, thereby achieving active amplification of the polarization ratio even at zero bias. This invention breaks the limitation of the inherent anisotropy of materials on the magnitude of the polarization ratio, and uses a completely dry transfer process to fabricate polarization detection photodetectors, eliminating the need for additional polarization elements and chemical solution treatment. It boasts advantages such as simple process, low cost, high repeatability, and no pollution.