1302 results about "Dark current" patented technology

The invention relates to the technical field of gas leakage detection, and discloses an infrared imaging radiation correction method and system for gas leakage detection, and the method comprises the steps: obtaining the distribution data of dark current noise, and the mapping relation parameters of an image gray value and a radiation brightness value; acquiring infrared radiation of the gas leakage scene by using an infrared detector to obtain an original infrared image; based on the distribution data of the dark current noise, performing pixel-by-pixel compensation on the original infrared image to generate an infrared image after dark current correction; extracting the radiation intensity distribution of the infrared image after dark current correction, calibrating the radiation value of each pixel in the infrared image based on the mapping relation parameter between the image gray value and the absolute radiation brightness value, converting the image gray value into the absolute radiation brightness value, and generating the infrared image after radiation calibration; and outputting an infrared image after radiometric calibration for subsequent gas leakage area identification and feature analysis. According to the invention, a high-quality and quantifiable radiation quantification image can be output.

The invention discloses a multispectral pollution analysis method and system for a photovoltaic cleaning unmanned aerial vehicle, and belongs to the technical field of spectrum detection.The multispectral pollution analysis method comprises the steps that a multispectral image is obtained, dark current-radiation-atmosphere-shadow full-link preprocessing is carried out, multiband weighted threshold segmentation and morphological post-processing are constructed, and a pollution area is extracted; establishing a self-learning pollution spectral feature library, and identifying pollution types by using cosine similarity; generating a pollution degree distribution diagram in combination with the pollution type-efficiency attenuation mapping table; and when the overall efficiency loss exceeds a preset value, planning a three-dimensional track based on a cluster priority score and an ant colony-genetic fusion algorithm, and returning an image to perform closed-loop verification and complementary cleaning after the unmanned aerial vehicle performs cleaning. According to the invention, the pollution identification precision, the efficiency evaluation accuracy and the cleaning intelligence level are significantly improved, and the method can be widely applied to unattended operation and maintenance of the photovoltaic power station.

The invention discloses a communication encryption method based on a two-dimensional inorganic / inorganic Van der Waals heterojunction polarized photoelectric detector, and belongs to the technical field of photoelectric devices. The photoelectric detector comprises a substrate, two-dimensional MoSe2 material layers, two-dimensional ReS2 material layers and a thin film electrode, wherein the two two-dimensional material layers form a Van der Waals vertical heterojunction and are of an II-type heterostructure; due to anisotropic light absorption of ReS2, effective carrier collection and transport capabilities of MoSe2 and an inhibition effect of heterojunction on dark current, the photoelectric property of the two-dimensional ReS2 / MoSe2 photoelectric detector is obviously improved, and meanwhile, the two-dimensional ReS2 / MoSe2 photoelectric detector has high responsivity of 89.4 A / W, fast response speed of 30.5 s and polarization sensitive characteristics, and can be applied to the field of photoelectric detectors. On the basis, information is subjected to multiple encryption by means of a polarization state information encryption technology, so that the concealment and security of an information transmission process can be greatly improved, and a new possibility is provided for the development of a security communication technology in the future.

The invention relates to the technical field of image enhancement, and discloses an image enhancement method based on an ISP image signal processing visual sensor, and the method comprises the steps: carrying out the collection of multiple frames of images of the same scene, carrying out the analog-to-digital conversion of the collected multiple frames of images, generating an RGB three-channel digital matrix, and obtaining N frames of original image sequences; dark current correction and lens shadow correction are executed, an affine transformation matrix from the N-1 frame to the first frame of image is calculated based on SIFT feature point extraction and matching, and an image sequence after space alignment is obtained; performing spatial feature extraction to obtain a multi-scale feature map sequence, and performing residual feature connection operation to obtain a time sequence correlation feature map sequence; according to the method, attention calculation of the channel dimension and the space dimension is executed, meanwhile, structural layer edge enhancement and texture layer denoising processing are executed, a target enhanced image is obtained, various kinds of distortion and noise interference in the image acquisition process are reduced, and the definition and the detail fidelity of the enhanced image are ensured.

A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.

The invention provides a medium-wave infrared detection chip and system, the chip is composed of a plurality of detection units arranged in the same plane, each detection unit is composed of a substrate, a buffer layer, a lower contact layer, an absorption layer, a barrier layer and an upper contact layer in sequence, the chip is arranged based on an nBp type structure, the buffer layer, the lower contact layer, the absorption layer, the barrier layer and the upper contact layer are all of a multi-period stacked superlattice structure, the thickness, the number of layers and the doping concentration of the InAs doped layers and the GaSb doped layers which are stacked in each period are controlled, dark current suppression in the mid-infrared detection process is achieved, and the quantum efficiency is effectively improved.

The invention provides a vertical structure ultraviolet photoelectric detector and a preparation method thereof. The ultraviolet photoelectric detector is of a vertical structure, the design facilitates light absorption of the ultraviolet photoelectric detector, the light utilization rate of the ultraviolet photoelectric detector is improved, and compared with a horizontal structure, the transmission distance is shortened, and the cost is low; the ultraviolet photoelectric detector provided by the invention has a relatively high switching ratio of light and dark current and relatively small dark current, and also has a very high response speed under the condition of keeping the switching ratio of light and dark current and the dark current; a PN junction is formed between the nickel oxide hole transport layer and the beta-phase gallium oxide single crystal, so that the ultraviolet photoelectric detector has self-driving performance; in the manufacturing process, the substrate is used as a supporting frame, and the extraction electrode is packaged in one step through the conductive adhesive tape, so that 3-5 photoetching steps of a traditional horizontal structure are omitted, the process is simplified, and the process manufacturing is simpler.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention discloses a quasi one-dimensional (TaSe4) 2I and two-dimensional MoTe2 mixed-dimensional heterojunction phototransistor detector and a preparation method thereof, the detector sequentially comprises a Si substrate, a SiO2 gate dielectric layer, a quasi one-dimensional (TaSe4) 2I and two-dimensional MoTe2 nano film from bottom to top, the quasi one-dimensional (TaSe4) 2I and MoTe2 nano film are respectively provided with a metal electrode, and a heterostructure of the (TaSe4) 2I, the MoTe2 and the metal electrodes is formed. The preparation method comprises the following steps: (1) transferring the (TaSe4) 2I nanowire to the Si substrate; (2) transferring the MoTe2 nano film to one side of the (TaSe4) 2I nanowire; (3) preparing a pattern of a bottom electrode; (4) positioning, exposing and developing the pattern of the bottom electrode to expose the electrode part needing to be evaporated; and (5) preparing a metal electrode. According to the invention, the composite effect of a (TaSe4) 2I / MoTe2 heterojunction is utilized, and dark current is inhibited through a vertical structure; moTe2 is utilized to increase light absorption, and meanwhile, grid voltage is applied, so that light current is improved, and high responsivity and external quantum efficiency are obtained.

The invention relates to the technical field of beauty intelligent terminals, multi-modal deep learning and transfer learning, image processing and the like, and provides a skin condition evaluation method based on a skin detection function head and a beauty intelligent terminal. And synchronous acquisition of visible and near-infrared multi-channel skin images and impedance spectrums is realized. According to the method, multi-modal data are aligned by taking a unified timestamp as a reference, dark current correction, wavelet denoising and environment standardization are introduced in a preprocessing stage, and a unified feature vector is constructed. The multi-modal cross attention model subjected to transfer learning fine tuning is fused with each modal feature and then outputs four indexes of water-oil balance, pigmentation, texture roughness and inflammation risk; and if a high-risk state is detected, subsequent physiotherapy is automatically limited, and a voice alarm is given out, so that a detection, evaluation and protection closed loop is formed, and the intelligent beauty safety and evaluation accuracy are improved.

The invention provides a single-photon avalanche diode and a single-photon detector, and relates to the technical field of semiconductor photoelectric detection, and the single-photon avalanche diode comprises a plurality of avalanche diode units. The avalanche diode units are sequentially stacked in the propagation direction of incident light to be detected. Each avalanche diode unit is provided with an electric field control module which is used for independently adjusting the bias electric field of each avalanche diode unit. In the propagation direction of the incident light, the avalanche diode unit of the next stage is used for absorbing the remaining photons which are not absorbed by the avalanche diode unit of the previous stage and generating carriers, so that avalanche current is formed. The light absorption wavelength ranges of adjacent avalanche diode units are at least partially overlapped. The single-photon avalanche diode solves the problem that the existing single-photon avalanche diode cannot balance high detection efficiency and low dark current, and achieves the purpose of improving the detection efficiency of a single-photon detector on the premise of not increasing the dark current.

The tellurium-cadmium-mercury double-layer component heterogeneous planar junction detector comprises a substrate material layer, an n-type absorption layer, a surface n-type wide band gap heterogeneous layer, a passivation layer and a contact electrode layer which are arranged in a stacked mode. The surface n-type wide band gap heterogeneous layer is a wide band gap heterogeneous layer prepared on the surface of the n-type absorption layer based on a mercury-rich vertical liquid phase epitaxy technology, and the residual impurities are n-type; the passivation layer covers at least partial areas of the isolation region and the p-type injection region in the orthographic projection direction, and the part, not covering the p-type injection region, of the passivation layer is a contact hole; the contact electrode layer is in contact with the p-type injection region, and the orthographic projection area of a contact electrode is larger than and covers the contact hole. According to the invention, interface mutual diffusion is realized in the growth process of the n-type wide bandgap heterogeneous layer, and the mercury cadmium telluride p-on-n planar heterojunction device is realized through As ion implantation. Tunneling current and surface electric leakage can be effectively suppressed, dark current can be reduced, and device performance can be improved.

The invention discloses an engine oil carbon deposition sampling detection method and system based on multispectral imaging, and the method comprises the steps: carrying out the collection of a to-be-processed multispectral image of an engine oil sample under a multispectral light source, and carrying out the preprocessing of the image to obtain a to-be-processed image; performing dark current correction on the to-be-processed image according to a band ratio method, and enhancing the signal intensity of the to-be-processed image; calculating the spectral reflectivity of the to-be-processed image according to the signal intensity of the to-be-processed image; extracting a three-dimensional feature tensor in the to-be-processed image according to the spectral reflectivity; segmenting the to-be-processed image according to the three-dimensional feature tensor, and screening a carbon deposition region; calculating a carbon deposition probability value of each pixel point in the carbon deposition area according to the spectral reflectivity; and setting a carbon deposition threshold value according to the carbon deposition probability value for judgment so as to judge whether carbon deposition exists in the engine oil sample or not. The similarity between the sample engine oil spectral reflectivity and the reference engine oil is reflected, and a possible carbon deposition area is found, so that the carbon deposition defect is accurately judged and identified.

The invention discloses a stress balance InP-InGaAs avalanche photodetector and a preparation method thereof. An n-type InP buffer layer, an unintentionally doped In < 0.53 > Ga < 0.47 > As bottom absorption layer, a plurality of groups of unintentionally doped stress matching InGaAs absorption layers, an unintentionally doped In < 0.53 > Ga < 0.47 > As top absorption layer, an n-type InP charge layer and an unintentionally doped InP cover layer are sequentially grown on an n-type InP substrate; the optimal photosensitive wavelength of the avalanche photodetector is 2.0 microns, and the device can stably work at room temperature at low dark current.

The invention discloses a dynamic adaptive black level correction method and device, and relates to the technical field of image processing. According to the dark current space distribution difference, an effective pixel area in each frame of original image is dynamically divided; determining an initial black level calibration coefficient of each space block based on the dark pixel noise level; obtaining the current temperature and the temperature change rate of each space block, and obtaining the level calibration coefficient of each space block after temperature self-adaptive calibration based on the initial black level calibration coefficient corresponding to each space block; fusing the calibration information of the previous frame and the level calibration coefficient of the current frame to obtain a cross-frame stable calibration result; and correcting the effective pixels in each space block based on a cross-frame stable calibration result to obtain a corrected pixel value, and reconstructing the corrected pixel value into an output image. The problems that an existing black level calibration technology is poor in space uniformity, insufficient in temperature change adaptability and unstable in calibration coefficient are solved.

The invention relates to a high-speed low-dark-current three-step structure avalanche photodetector and a preparation method thereof, and belongs to the technical field of semiconductor devices. Comprising an intrinsic InP substrate, an N-type InAlAs ohmic contact layer, an intrinsic InAlAs transition layer, an N-type InAlAs charge layer, an intrinsic InAlAs multiplication layer, a P-type InAlAs charge layer, an intrinsic InAlGaAs transition layer, an intrinsic InGaAs absorption layer, a gradient-doped P-type InGaAs absorption layer and a P-type InAlAs ohmic contact layer which are stacked from bottom to top. The intrinsic InGaAs absorption layer 8 and the N-type InAlAs ohmic contact layer 2 are both of a step structure so as to form a three-stage step structure of the photoelectric detector. According to the invention, through growing the SiNx antireflection film with the refractive index of 1.85 and the thickness of 210 nm on the light incident surface, the reflectivity of incident light can be less than 1%. For an optical signal with the wavelength of 1550 nm, the single light absorption quantum efficiency can reach 0.45.

The invention belongs to the technical field of photoelectric detection, and discloses a heterojunction dual-band photoelectric detector based on a two-dimensional material, which comprises a substrate layer, an insulating layer, a molybdenum disulfide layer, graphene, black phosphorus and a metal electrode, the insulating layer is formed above the substrate layer, the molybdenum disulfide layer is located above the insulating layer, the molybdenum disulfide layer is formed above the insulating layer, no less than two layers of graphene are arranged above the molybdenum disulfide layer, and the top layer is multi-layer black phosphorus; the molybdenum disulfide layer, the graphene and the black phosphorus are in contact through Van der Waals force, a source electrode and a drain electrode of a formed heterostructure are connected with the metal electrode, and the molybdenum disulfide layer and the black phosphorus are isolated through the graphene and do not make contact with each other. In the invention, the intrinsic dark current in direct proportion to the effective transmission volume of the device is greatly reduced, and meanwhile, the current carriers are limited in a two-dimensional plane and are very easy to regulate and control by a local electric field, so that the dark current of the device can be further reduced, and the problem that the detector prepared from most traditional materials needs refrigeration at present can be solved.

The invention relates to a method for verifying a Mars sky radiance simulation result based on a Mars real-shot photo, and belongs to the technical field of Mars sky background radiance. Comprises: image acquisition; performing radiation calibration; correcting dark current; performing flat field correction; converting a radiation value; and geometric correction. The Mars sky radiance simulation method breaks through the dependence of an existing model on idealized hypothesis, performs dynamic verification by using actual shot image data, remarkably improves the authenticity and reliability of a Mars sky radiance simulation result, and effectively solves the problem of systematic deviation under a specific wave band; by constructing a complete process from image acquisition, radiation calibration, geometric modeling to brightness inversion and comparison verification, dynamic feedback and closed-loop correction of a theoretical radiation model are realized, model adaptability is improved, and fine modeling under multi-temporal and multi-meteorological conditions is supported; the method can be applied to an existing Mars rover navigation camera and an image processing link of the Mars rover navigation camera, does not need additional modification, has good engineering practicability and task compatibility, and is convenient to popularize and apply.

The invention belongs to the technical field of image processing, and particularly relates to an intelligent agricultural product pesticide residue detection method and system based on a spectrum technology, and the method comprises the steps: obtaining the hyperspectral reflectivity according to the original hyperspectrum, dark current and whiteboard image data; calculating an illumination confidence factor by using the average spectral intensity; performing linear scaling on the obtained standard biological matrix background spectrum according to the illumination confidence factor to obtain a local background estimated value and obtain a net residual spectrum; generating a pesticide residue distribution thermodynamic diagram by combining the cosine similarity of the net residual spectrum and the target pesticide standard fingerprint spectrum and the noise suppression weight based on the illumination confidence factor; and pesticide residue detection is carried out according to the statistical characteristics of the connected region of the suspected defect mask. Through adaptive background deduction and noise suppression, the problems of uneven curved surface illumination and strong background interference are solved, and the detection accuracy is improved.

The invention relates to the technical field of gas station safety risk assessment, in particular to a gas station safety risk assessment method and system. The gas station global infrared image is acquired in real time by deploying the multi-band infrared imaging array, dark current compensation, gain correction and atmospheric transmittance calibration are combined, the oil gas concentration detection precision is remarkably improved, and based on the homography matrix dynamic coordinate alignment technology, the oil gas concentration detection precision is greatly improved by utilizing mark point re-projection error optimization and feature point optical flow tracking. The problem of coordinate drifting caused by thermal deformation is solved, it is ensured that the space positioning error is continuously lower than 2 pixels, and by combining time sequence concentration field construction and a hybrid prediction model, precise deduction of an oil gas concentration field at any moment in the future is achieved, real-time monitoring of a gas station is achieved, and fire blast accidents caused by detection lag are eradicated from the source; the technical problem that potential safety risks are difficult to discover in time through an existing method for monitoring the oil gas concentration of the gas station is solved.

A pixel circuit includes: a phototransistor configured to receive, by one region of a source and a drain, inflow of photo-carriers generated by light entering a substrate, and configured to output a voltage signal from the one region; and a blocking layer provided on another region of the drain and the source and on a side of a channel far from a surface, and configured to prevent the photo-carriers from directly flowing into the other region. The phototransistor causes a sub-threshold current to flow between the source and the drain in a pinch-off state. Each of the source and the drain of the phototransistor is periodically reset to a reset voltage. The reset voltage is set to a voltage between a voltage at which a dark current of the phototransistor becomes zero and a voltage at which a bias voltage of the phototransistor becomes zero.

The invention relates to the technical field of electrical performance research of insulating materials, and discloses a simulation method and system for surface charges of a basin-type insulator, a terminal and a medium, and the method comprises the steps: building a simulation model for the surface charges of the basin-type insulator through obtaining dark current data of a gas side; the gas side dark current data are set as boundary conditions of a basin-type insulator surface charge simulation model physical field, surface charge distribution characteristic calculation under any gas and gas pressure is achieved, and the method is not limited by the problem that diffusion coefficients, recombination coefficients, ion pair generation rates and migration coefficient parameters of positive and negative ions of existing gas are limited; the physical field calculation model is solved according to boundary conditions in the divided adaptive grid division, charge distribution and electric field distribution characteristics are obtained, basin-type insulator surface charge simulation is completed, the calculation efficiency is improved, and the accuracy of simulation of the surface charge distribution characteristics and spatio-temporal evolution laws of key insulators in direct-current GIS / GIL is improved.

The present technique relates to an imaging device and an electronic device that can further suppress the occurrence of white spots and dark current.The imaging device includes: a photoelectric conversion region including a first semiconductor region containing a first impurity and a second semiconductor region containing a second impurity; and a layer region including at least a first layer containing a high concentration of the first impurity and a second layer made of a predetermined material on a light incident surface side of the photoelectric conversion region. The imaging device further includes a pixel array part including the photoelectric conversion region disposed therein in an array form; and a pixel peripheral part including a processing unit that is disposed therein and processes a signal from the pixel array part. The pixel peripheral part is provided with a layer region not including the first layer. The present technique is applicable to, for example, an imaging device such as an image sensor.

The invention discloses a graphene intercalation-based black phosphorus photovoltaic detector and a preparation method thereof. The graphene intercalation-based black phosphorus photovoltaic detector comprises a low-resistance silicon / silicon dioxide substrate, a left contact electrode, a right contact electrode and a sandwich structure layer from bottom to top, the left contact electrode and the right contact electrode are deposited on the low-resistance silicon / silicon dioxide substrate, and a conducting channel structure is formed between the left contact electrode and the right contact electrode; the sandwich structure layer is a sandwich structure constructed by an upper black phosphorus film layer, a middle graphene intercalation layer and a lower black phosphorus film layer, and is located in the conductive channel as a photosensitive region; and the left contact electrode and the right contact electrode are respectively in Schottky contact connection with the upper black phosphorus film layer and the lower black phosphorus film layer. According to the graphene intercalation-based black phosphorus photovoltaic detector and the preparation method thereof, visible light and infrared light can be efficiently detected at the same time, and the graphene intercalation-based black phosphorus photovoltaic detector has the excellent characteristics of low dark current, quick response, high-sensitivity low-power-consumption detection and the like.

The invention discloses a detection method for fertilizer production, and relates to the technical field of fertilizer detection.The detection method comprises the following steps that a near-infrared multispectral visual detection system is installed at the working section before packaging of a fertilizer production line, the positions of a camera and an illumination source are adjusted, and multispectral images of fertilizer particles are collected; sequentially carrying out dark current correction and flat field correction on the acquired image, eliminating noise and uneven illumination, and then carrying out median filtering to remove random noise; selecting a waveband image with the best contrast ratio, separating particles from the background through threshold segmentation, and positioning each independent particle after optimizing the boundary through morphological processing; and based on the multi-band reflectivity difference, analyzing the surface material of the particles pixel by pixel, and counting the proportion of the coating area of each particle to obtain the coating coverage rate of the single particle. By introducing the near-infrared multispectral visual detection technology and the coating uniformity quantitative analysis model, non-destructive and high-precision online detection of the coating coverage rate of the fertilizer can be realized.

The invention provides a polarization hyperspectral water quality monitoring system and method, and the system comprises a tower footing polarization hyperspectral imaging module which is disposed on a building beside a to-be-detected water area, and carries out the area array staring scanning of the to-be-detected water area through a polarization hyperspectral imager, so as to obtain a water body polarization hyperspectral image signal of the to-be-detected water area; the image spectral data processing module is used for deducting dark current and spurious signals from the water body polarization hyperspectral image signals, and calculating the water body spectral reflectivity of the water area to be measured according to the water body polarization hyperspectral image signals by combining a gray value and reflectivity relation model constructed by using the hyperspectral image signals of the gray scale calibration plate; and the water quality parameter spatial distribution inversion module is used for performing inversion on the to-be-detected water quality parameters of the to-be-detected water area according to a pre-constructed water quality parameter inversion model and the water body spectral reflectivity. According to the technical scheme, the integration level is high, the automation degree is high, rapid deployment can be achieved, and all-day continuous unattended monitoring can be achieved.

The invention discloses a zero-dead-time single photon counting system based on time division multiplexing, and belongs to the technical field of laser radars. The system comprises an optical multiplexer, N detection channels, N delay modules, a shift register and a counting circuit, according to a time division multiplexing mechanism, a time axis is divided into a plurality of independent time slots, and in different time slots, incident signal light is input into different detection channels according to a preset sequence, so that zero-dead-time single photon counting is realized. According to the invention, the dead time problem of a traditional single-photon detector is solved, the photon counting pulse and the dark current pulse are effectively distinguished through a multi-parameter pulse discrimination technology, the signal-to-noise ratio of the system is significantly improved, and a reliable solution is provided for application scenes requiring high-sensitivity detection, such as laser radar and quantum communication.

A system for modifying a dark current image is configurable to receive an input image depicting a dark current state for one or more pixels of the input image, The dark current state for one or more pixels of the input image comprises one of: a faulty state or a non-faulty state. The system is configurable to partition the input image into a plurality of partitions and generate an updated input image by imposing at least one quantity constraint or at least one severity constraint to the plurality of partitions in association with at least one type of dark current state.

The invention provides an infrared detector reading circuit based on a dark current suppression structure, which comprises a dark current suppression circuit, an integrating circuit, a double sampling circuit, a source follower, a differential amplification circuit and an output buffer circuit which are electrically connected in sequence, and also comprises a sequential logic circuit, the dark current suppression circuit is used for generating a controllable current which is not influenced by temperature change, and the current is mirrored and then used for counteracting the dark current of the infrared detector; the sequential logic circuit is used for providing row selection logic, column selection logic and a sampling time sequence when a target pixel is selected from an infrared detector pixel array; the reading circuit can read the current signal of the target pixel according to the row selection logic, the column selection logic and the sampling time sequence; according to the invention, the signal-to-noise ratio of the readout system is improved by suppressing dark current, the function of reading out according to the column is realized based on the sequential logic circuit, the noise interference among the readout circuits in the array can be effectively reduced, and the focal plane array readout circuit is suitable for preparing a large-array-scale focal plane array readout circuit.

The invention relates to the field of ultraviolet detectors, and particularly provides a solar-blind ultraviolet photoelectric detector and a preparation method and application thereof. The preparation method comprises the following steps: S1, carrying out first spin coating of a gallium oxide precursor solution on a substrate, and carrying out first heat treatment to obtain a gallium oxide polycrystalline thin film; s2, depositing a metal electrode on the surface of the gallium oxide polycrystalline film; and S3, carrying out second spin coating on the metal electrode with an indium gallium zinc oxide precursor solution, and carrying out second heat treatment to obtain the solar-blind ultraviolet photoelectric detector. The solar blind ultraviolet photoelectric detector is reliable in process and good in repeatability, and the obtained solar blind ultraviolet photoelectric detector at least has the advantages of being high in responsivity, high in detection rate and high in light and dark current.