Avalanche photo-diode based on AlInAsSb body material as multiplication region and preparation method therefor
An avalanche photoelectric and diode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as low detection sensitivity, thermal noise limitation of detection sensitivity, and increase system operating costs, achieving high gain-bandwidth product and meeting sensitivity requirements , Reduce the effect of tunneling dark current
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[0039] The invention provides an avalanche photodiode based on the AlInAsSb bulk material as the multiplication zone and a preparation method thereof. By using the AlInAsSb bulk material as the avalanche multiplying layer, it has the characteristics of single-carrier ionization, and there is no avalanche build-up time. The gain-bandwidth product limit has the advantages of low noise and high gain-bandwidth product. At the same time, the forbidden band width can be adjusted by using substrates with different lattice constants, which effectively reduces the dark current and satisfies the requirements of photodetectors. While requiring high sensitivity, the design of energy band engineering can also be realized, which broadens its scope of application.
[0040] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference...
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