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A PIN structure TiO2 base ultraviolet detector and its making method

An ultraviolet detector and detector technology, applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of difficult to obtain P-type TiO conductive materials, difficulties, etc., and achieve simple and mature preparation process, easy to use The effect of long life and fast response

Inactive Publication Date: 2007-10-17
DALIAN MARITIME UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to TiO 2 It is an N-type conductive material, and the usual preparation method is difficult to obtain P-type TiO 2 Conductive material, therefore, in the process to form a pn-type or pin-type TiO 2 Substrate-junction photodetection devices are very difficult

Method used

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  • A PIN structure TiO2 base ultraviolet detector and its making method
  • A PIN structure TiO2 base ultraviolet detector and its making method
  • A PIN structure TiO2 base ultraviolet detector and its making method

Examples

Experimental program
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Effect test

Embodiment 1

[0038] Intrinsic TiO 2 Preparation of sol: tetrabutyl titanate as the precursor. Tetrabutyl titanate and diethanolamine are dissolved in absolute ethanol (60% of the total amount), and stirred for 30-60 minutes to obtain a mixed solution. In addition, deionized water and absolute ethanol (40% of the total amount) are mixed uniformly, and then dropped into the above mixed solution drop by drop under constant stirring. After the addition, continue to stir for 30-120 minutes to obtain a uniform and transparent Light yellow TiO 2 Sol. The ratio of reactants: tetrabutyl titanate: absolute ethanol: deionized water: diethanolamine=20:100:1:6 (volume ratio).

[0039] Preparation of ZnO: Al sol: a certain amount of (CH 3 COO) 2 Zn·2H 2 O is dissolved in a mixed solution of ethylene glycol methyl ether and monoethanolamine (MEA), [Zn 2+ ]: [MEA] = 1:1, prepared into a mixed solution with a zinc ion concentration of 0.5-1.0 mol / L. Then, fully stir in a water bath at 50-70°C for 1-5 hours to ...

Embodiment 2

[0050] TiO 2 :Preparation of Zn sol: Add an appropriate amount of Zn(NO 3 ) 2 Dissolve in 20-40ml of absolute ethanol, add 10-15ml of tetrabutyl titanate and 3-4.5ml of diethanolamine, and stir for 30-120min to obtain a mixed solution. In addition, mix 0.5-1ml deionized water and 10-30ml absolute ethanol evenly, drop them into the above mixed solution dropwise under constant stirring, and continue stirring for 30-120min after the dropwise addition to obtain uniform and transparent TiO 2 : Zn sol. The volume ratio of the reactants: tetrabutyl titanate: absolute ethanol: deionized water: diethanolamine = 20:100:1:6.

[0051] The pretreatment method of the conductive substrate is the same as in Example 1.

[0052] Use tin foil as a mask to cover the edges of the pre-processed ITO conductive glass with a width of 2mm. The N-type ZnO:Al film is prepared by the electron beam evaporation method. The specific method is: select ZnO powder with a purity of 99.7%, mix with alumina powder wit...

Embodiment 3

[0057] Intrinsic TiO 2 The preparation of the sol and the pretreatment of the conductive substrate are the same as in Example 1.

[0058] Use tin foil as a mask to cover the edges of the pre-processed ITO conductive glass with a width of 2mm. A 10nm thick In film was deposited on the ITO conductive glass by thermal evaporation. Using high-purity diethyl zinc (purity>991999%) as the zinc source, O 2 (Purity>991999%) as oxygen source, N 2 As a carrier gas (purity>991999%), a ZnO film with a thickness of 0.1-1 μm is prepared on the In film by chemical vapor deposition. The growth chamber pressure is 133Pa, and the growth temperature is 350-550°C. After deposition, the prepared ZnO / In film is heat-treated at 600-1000° C. for 30-120 minutes to obtain an N-type ZnO:In film.

[0059] Using the preparation method of Example 1, the intrinsic TiO with a thickness of 0.2-2 μm was prepared on the N-type ZnO:In film 2 Active layer. Using dry etching technology to prepare the intrinsic TiO 2 Pa...

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Abstract

The invention relates to a PIN structural TiO2 base ultraviolet light detector for ultraviolet light detector and its manufacturing method. The ultraviolet light detector comprises a conductive substrate, a N-type semiconductor contact layer, an intrinsic TiO2 active layer and a P-type wide-band-gap semiconductor contact layer. The manufacturing method of the ultraviolet light detector comprises the following step: preparing the N-type semiconductor contact layer on the conductive substrate after pretreatment; preparing the intrinsic TiO2 active layer on the N-type semiconductor contact layer; carrying out a partial etching to the around part of the active layer by using a dry etching technology; preparing the P-type contact layer on the etching part of the active layer; preparing a P-type ohmic electrode on the P-type contact layer; and preparing a N-type ohmic electrode on the conductive substrate. The invention has a plurality of advantages such as high external quantum efficiency and sensitivity, rapid response speed, small dark current, small and exquisite volume, cheap cost, and long service life. The film preparation technology is convenient and maturate. The interference of light sources except the ultraviolet ligh may be prevented.

Description

Technical field [0001] The invention belongs to the field of semiconductor devices, and specifically relates to a TiO with a PIN structure for ultraviolet light detection 2 Based ultraviolet light detector and manufacturing method thereof. Background technique [0002] Ultraviolet detectors are another dual-purpose photoelectric detection technology that has emerged after infrared and laser sensing technologies. Due to its excellent performance and strong anti-interference ability, this detection technology has been widely used in many fields such as aircraft, rocket and missile plume detection, ultraviolet communication technology, metallurgical forging, and flame warning. Especially in the field of aerospace, the detection of important information in the universe-ultraviolet radiation, and the construction of large-scale space astronomical instruments all urgently need an advanced ultraviolet detector. Therefore, all countries in the world have listed advanced, reliable, and lo...

Claims

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Application Information

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IPC IPC(8): H01L31/105H01L31/18
CPCY02P70/50
Inventor 曹望和付姚罗昔贤
Owner DALIAN MARITIME UNIVERSITY
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