The invention relates to the technical field of
semiconductor devices and devices, in particular to an LED
chip and a preparation method thereof, and the preparation method comprises the following steps: 1) photoetching: photoetching a required pattern on an epitaxial layer; the top of the N-GaN layer, the multi-
quantum hydrazine layer and the P-GaN layer form an N region of the LED
chip, and the bottom of the N-GaN layer and a part of the substrate are provided with
cutting channels; 2) deep
etching: performing deep
etching by using an ICP technology so as to at least
expose the N-GaN layer; 3) performing angle
etching: performing angle etching by using IBE (Inter-Back
Etching) to enable the side wall of the N region and / or the side wall of the top edge of the
cutting channel to be in an inverted trapezoidal shape; and 4) manufacturing a transparent conductive layer, and depositing a protective layer, a P
electrode and an N
electrode to obtain the LED
chip. According to the process, the light emitting efficiency of the LED chip is improved, so that the external
quantum efficiency is improved; the process is stable, and the yield can be improved; therefore, the
cutting process step can be omitted, the yield can be improved, the subsequent
processing flow is shortened, and the cost is controlled.