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4441results about How to "Low dielectric constant" patented technology

Liquid crystalline thermosets from ester, ester-imide, and ester-amide oligomers

Main chain thermotropic liquid crystal esters, ester-imides, and ester-amides were prepared from AA, BB, and AB type monomeric materials and were end-capped with phenylacetylene, phenylmaleimide, or nadimide reactive end-groups. The resulting reactive end-capped liquid crystal oligomers exhibit a variety of improved and preferred physical properties. The end-capped liquid crystal oligomers are thermotropic and have, preferably, molecular weights in the range of approximately 1000-15,000 grams per mole. The end-capped liquid crystal oligomers have broad liquid crystalline melting ranges and exhibit high melt stability and very low melt viscosities at accessible temperatures. The end-capped liquid crystal oligomers are stable for up to an hour in the melt phase. These properties make the end-capped liquid crystal oligomers highly processable by a variety of melt process shape forming and blending techniques including film extrusion, fiber spinning, reactive injection molding (RIM), resin transfer molding (RTM), resin film injection (RFI), powder molding, pultrusion, injection molding, blow molding, plasma spraying and thermo-forming. Once processed and shaped, the end-capped liquid crystal oligomers were heated to further polymerize and form liquid crystalline thermosets (LCT). The fully cured products are rubbers above their glass transition temperatures. The resulting thermosets display many properties that are superior to their non-end-capped high molecular weight analogs.
Owner:NASA

Bi-layer approach for a hermetic low dielectric constant layer for barrier applications

Methods and apparatus are provided for processing a substrate with a bilayer barrier layer. In one aspect, the invention provides a method for processing a substrate including depositing a nitrogen containing barrier layer on a substrate surface and then depositing a nitrogen free barrier layer thereon. The barrier layer may be deposited over dielectric materials, conductive materials, or both. The bilayer barrier layer may also be used as an etch stop, an anti-reflective coating, or a passivation layer.
Owner:APPLIED MATERIALS INC

Capping layer for extreme low dielectric constant films

Specific embodiments of the invention provide a silicon-carbide-type or silicon oxycarbide (also often called carbon-doped-oxide [CDO] or organosilicate glass) capping material and method for depositing this capping material on ELK films which are used as a dielectric material in integrated circuits. The ELK film may include any ELK film including but not limited to inorganic, organic and hybrid dielectric materials and their respective porous versions. The silicon-carbide-type material may be an amorphous silicon carbide type material such as the commercially available BLOk™ material, or a carbon-doped oxide material such as the commercially available Black Diamond™ both of which are developed by Applied Materials of Santa Clara, Calif. The amorphous silicon carbide (a-SiC) material is deposited using a plasma process in a non-oxidizing environment and the CDO-type material is deposited using an oxygen-starved plasma process. The non-oxidative or oxygen-starved plasma processes do not significantly degrade the underlying film's chemical and electrical properties. The CDO material offers the advantageous property of having a lower dielectric constant value of less than 3.5 as opposed to the a-SiC material which has a dielectric constant of approximately 4.5. The CDO material besides, having a lower dielectric constant also has a superior adhesion characteristics to the underlying ELK material. However, experiments have indicated that despite its higher dielectric constant, the a-SiC-type material (e.g. BLOk™) may be used to generate capped ELK films with similar or even reduced dielectric constants relative to lower k capped films, and may provide composite (i.e. ELK+cap) structures exhibiting superior k stability.
Owner:APPLIED MATERIALS INC

Patternable low dielectric constant materials and their use in ULSI interconnection

The present invention relates to ultra-large scale integrated (ULSI) interconnect structures, and more particularly to patternable low dielectric constant (low-k) materials suitable for use in ULSI interconnect structures. The patternable low-k dielectrics disclosed herein are functionalized polymers that having one or more acid-sensitive imageable functional groups.
Owner:AURIGA INNOVATIONS INC
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