97results about How to "Low dielectric constant" patented technology

The invention discloses ternary copolymerized low-dielectric polyimide based on fluorinated cross-linked side groups as well as a preparation method and application of the ternary copolymerized low-dielectric polyimide. According to the preparation method, two diamine monomers with a fluorine-containing group and a large-volume side chain group, namely fluorine-containing triarylmethane diamine and tetrafluorostyrene side group-containing diamine, are polymerized with 4, 4 '-(hexafluoroisopropenyl) diphthalic anhydride to obtain the ternary copolymerized polyimide (Co-FPAPI-x), and the preparation method is efficient, simple, convenient and low in cost. The tetrafluorostyrene group in the ternary copolymerized polyimide structure can form a hydrophobic cross-linked network through a thermal cross-linking reaction. Besides, by changing the proportion and thermal crosslinking degree of the two diamine monomers, the accumulation state, polarization behavior and the like of a molecular chain can be adjusted, so that the performance of the material is improved.

The application discloses a photosensitive polyimide resin, a polyimide composition and a preparation method thereof. The photosensitive polyimide resin has a molecular structure as shown in formula (1). The aminoized hyperbranched polysiloxane unit with hydrophobic characteristics is introduced into the polyimide molecular main chain to form a micro-crosslinking structure between the molecular chains, and the crosslinking reaction of the photosensitive unit effectively improves the resolution of the photoresist and reduces the thermal expansion coefficient of the patterned film. The rich Si-O-Si units in the hyperbranched polysiloxane and the low polarity and hydrophobic characteristics of the CF3 unit can reduce the dielectric constant of the patterned film. The Si-O-Si network unit has better interface compatibility with glass and a silicon wafer, thereby forming stronger interface force and improving the adhesion between the photoresist and the substrate.

The invention discloses a sulfur-free FR-4 copper-clad plate and a preparation method thereof, and belongs to the technical field of copper-clad plates. The copper-clad plate is prepared from sulfur-free epoxy resin, a sulfur-free curing agent, a sulfur-free flame retardant, organic silicon hybrid macromolecules, tetrafunctional epoxy resin, linear phenolic resin, microencapsulated ammonium polyphosphate, melamine cyanurate, surface grafting modified boehmite nanorods and filler. Through the design of a sulfur-free system, the sulfur content of the product is lower than 50 ppm, and the problems of contact resistance increase, unstable signal transmission and the like caused by sulfide migration of a traditional FR-4 copper-clad plate in a high-temperature and high-humidity environment are thoroughly solved. Meanwhile, the organic silicon hybrid macromolecules and the high-functionality epoxy resin have a synergistic effect, so that the balance of high glass transition temperature and high toughness is realized. The copper-clad plate has excellent dielectric property, flame retardant property and long-term reliability, and meets the development requirements of high reliability and high performance of electronic products.

The invention provides a low-water-absorption glass bead modified PBT (polybutylene terephthalate) material and a preparation method thereof. The low-water-absorption glass bead modified PBT material comprises the following components in parts by weight: 70-100 parts of PBT resin; 0 to 30 parts of solid glass beads; 0-5 parts of a toughening agent; 0-2 parts of an antioxidant; 0-2 parts of a lubricant; 0-2 parts of black color master batch; 0-2 parts of a coupling agent; 0-5 parts of polytetrafluoroethylene wax; wherein the average particle size of the solid glass beads is 1-50 [mu] m; the average particle size of the polytetrafluoroethylene wax is 3-15 [mu] m, and the weight-average molecular weight of the polytetrafluoroethylene wax is 10000-30000 g / mol; the weight ratio of the solid glass beads to the polytetrafluoroethylene wax is (5-10): 1. According to the invention, the polytetrafluoroethylene wax is added into the solid glass bead modified PBT material, so that the shrinkage difference between the material flow direction and the vertical flow direction is effectively reduced, the water absorption rate of the material is remarkably reduced, the preparation process is simple, and the production process is easy to control.

This invention discloses a polyolefin-containing DCPD epoxy resin and a copper-clad laminate composition thereof, and its preparation method. The method is characterized by: polymerizing polyallyl phenol and catalyst A at high temperature to form polyallyl phenol; then reacting DCPD, polyallyl phenol, and catalyst B at high temperature to form a polyolefin-containing DCPD phenol resin; subsequently, epoxidizing the resin with epichlorohydrin and alkaline catalyst C to synthesize a polyolefin-containing DCPD epoxy resin; finally, mixing the resin with maleimide resin, phosphorus-containing phenolic resin, imidazole accelerator, inorganic filler, and solvent to obtain the polyolefin-containing DCPD epoxy resin composition for copper-clad laminates. The polyolefin-containing DCPD epoxy resin and copper-clad laminate composition prepared by this invention exhibits low dielectric constant, low dielectric loss, and high heat resistance, making it particularly suitable as a raw material for copper-clad laminates and highly practical.

The application discloses a preparation method and application of a multi-phenyl phosphorus oxide compound and belongs to the technical field of organic synthesis. Different properties of raw materials are respectively dissolved through double solvents, a catalyst is added into the system, and the entering of the alkali metal salt reactant into the organic phase reaction is helped to be dissolved to obtain a molecular level reactant, so that the reaction is promoted to be completely carried out, the yield of a product is improved, the proportion of impurities, such as the reactant, contained in the product is reduced, the purity of the product is improved, and the high-purity product is a material with low dielectric property. The material is tested in various performances, and excellent flame retardance and low dielectric constant are obtained.

This invention discloses a modification method for nanocrystalline magnetic core encapsulation materials. The method includes: S1: surface functionalization modification of nano-silica and boron nitride nanosheets by grafting amino and epoxy groups, respectively; S2: blending and dispersing the modified inorganic nanofiller with low-viscosity bisphenol A type epoxy resin, flexible epoxy resin diluent, latent curing agent, and coupling agent under high shear force to form a uniform and stable modified epoxy resin composition; S3: plasma cleaning and activation treatment of the nanocrystalline magnetic core; S4: encapsulating the modified epoxy resin composition on the surface of the magnetic core using a vacuum pressure impregnation process, followed by programmed temperature curing. This invention significantly improves the mechanical strength, thermal conductivity, and heat resistance of the encapsulation layer and reduces the high-frequency dielectric constant and loss by constructing an organic-inorganic interpenetrating network and interface reinforcement.

The invention discloses an organic silicon cooling liquid for immersed liquid cooling and a preparation method and application thereof.The organic silicon cooling liquid is prepared from raw materials including 1, 1, 3, 3-tetramethyldisiloxane, long-chain alpha olefin, a phenyl siloxane ring body, a methyl siloxane ring body and the like through hydrosilylation and ring-opening chain extension polymerization reaction under the action of a catalyst to precisely regulate and control a molecular structure, and the organic silicon cooling liquid is prepared. And the long-chain alkyl-terminated polysiloxane with phenyl on the side chain is prepared. The prepared polysiloxane product has the advantages of being low in viscosity, high in flash point, low in pour point, high in heat conductivity coefficient and the like when being used as cooling liquid, and compared with fluorine-containing series cooling liquid which is used at present, the cost is reduced by 80% or above, so that the polysiloxane product has wide prospects in immersed cooling application in the fields of data centers, charging piles, new energy batteries and the like.

The invention provides a composite insulating layer of a light superconducting cable and a preparation method and application of the composite insulating layer. The composite insulating layer is prepared from the following raw materials in parts by weight: 40-60 parts of fusible polytetrafluoroethylene, 30-50 parts of fluorinated ethylene propylene, 0.5-5 parts of an auxiliary agent, 1-5 parts of filler and 0.1-0.6 part of a nucleating agent. The composite insulating layer of the light superconducting cable has relatively high tensile strength, relatively low dielectric constant and dielectric loss factor, good mechanical property and high insulating strength; compared with the prior art, the composite insulation layer has the advantages of low average cell diameter and high cell density, which indicates that a uniform and fine cell structure is formed in the composite insulation layer, the overall density of the material can be effectively reduced, the insulation layer is light, and the composite insulation layer can be applied to preparation of light superconducting cables for medical equipment and realizes integrity and low loss of high-frequency signal transmission.

The present invention discloses a low dielectric constant multifunctional electronic moisture-proof coating composition, and relates to the technical field of electronic materials and protective coatings, the composition comprises: a component A: 15-35% of a reaction type fluorine-silicon hybrid oligomer; the component B comprises 2%-8% of surface modified nanosheet barrier filler; the component C comprises 50%-75% of a green cosolvent system; the component D comprises 0.5%-3% of a multifunctional epoxy silane coupling agent; and the component E comprises 1%-5% of a photo-thermal dual-curing initiation system. The problems that in the prior art, the VOC emission of a fluorine-containing solvent is high, the compactness is insufficient due to filler sedimentation, and the water vapor permeability is high in a high-damp-heat environment are solved, through the quaternary synergistic effect, the low dielectric constant, high hydrophobicity, excellent moisture resistance and high adhesive force to various base materials are achieved, and the water-based paint is suitable for protection of high-frequency electronic devices.

The present invention relates to a resin composition comprising: a perfluoroalkoxy alkane (PFA); an elastomer selected from one or more selected from the group consisting of a styrene-based elastomer and a fluorine-based elastomer; and a hollow inorganic filler having a porosity of 60 to 90%; a prepreg comprising the same; a metal laminate; a laminate; and a printed circuit board.

The invention discloses a diamine monomer with a side chain containing tertiary butyl and a preparation method and application thereof.The diamine monomer is special in structure, polyesteramide or polyimide can be prepared through reaction of the diamine monomer and a tetracarboxylic acid derivative, the obtained polyesteramide is narrow in molecular weight distribution, the molecular chain is provided with the special structure introduced by the diamine monomer, and the molecular chain is not prone to being damaged. The resin prepared by the preparation method not only has good dissolution film-forming property, but also has excellent dielectric property and lower water absorption property, is high-performance resin, and is widely applied to the fields of communication electronics and aerospace.

This invention relates to a high-dielectric barium titanate material, its solid-state sintering preparation method, and its application. The solid-state sintering preparation method includes the following steps: barium titanate powder is sequentially ground, decarburized, and subjected to a first crushing process to obtain fine barium titanate powder; the fine barium titanate powder is sequentially sintered and subjected to a second crushing process to obtain the high-dielectric barium titanate material; the particle size of the barium titanate powder obtained from the first crushing process is the same as that of the powder obtained from the grinding process. This invention, through grinding, decarburization, and the first crushing process, ensures that the barium titanate powder has a small and uniform particle size, enabling the formation of a uniform and dense microstructure during subsequent sintering. This improves upon the problems of low barium titanate purity, unacceptable particle size, and low dielectric constant caused by traditional solid-state sintering methods.

The utility model discloses a kind of solid and liquid waste treatment's subcritical system, including subcritical hydrolysis reaction kettle, solid waste feeding mechanism, liquid waste feeding mechanism, steam boiler and solid-liquid separator;The upper portion of subcritical hydrolysis reaction kettle is equipped with feed inlet, gas inlet and exhaust port, the lower portion of subcritical hydrolysis reaction kettle is equipped with discharge port, feed inlet is equipped with feed valve, gas inlet is equipped with inlet valve, exhaust port is equipped with exhaust valve, discharge port is equipped with discharge valve;Solid waste feeding mechanism is used to send solid waste into feed inlet;Liquid waste feeding mechanism is used to send liquid waste into feed inlet;Steam boiler is used to provide high-temperature steam to subcritical hydrolysis reaction kettle;Solid-liquid separator is used to carry out solid-liquid separation to material discharged from discharge port.The utility model realizes the simultaneous processing of solid waste and liquid waste, and can directly carry out solid-liquid separation in the process of reaction kettle discharge.

The present application relates to the technical field of high polymer materials, and particularly relates to a low-dielectric low-loss halogen-free epoxy plastic packaging material and a preparation method thereof; the present application adopts naphthalene type epoxy resin as a main body resin, cooperates with active ester curing agent and benzoxazine prepolymer as a modified auxiliary agent, and adds porous mullite microspheres with a double-layer coating of polydopamine and silicon dioxide on the surface as inorganic fillers; the benzoxazine prepolymer takes magnolol as a skeleton, is modified by a phosphorus flame-retardant group and is siloxane functionalized, introduces efficient halogen-free flame-retardant elements phosphorus and silicon, participates in the epoxy curing reaction through the benzoxazine ring, and the siloxane segment can improve the filler dispersibility; the porous mullite microspheres contain a large number of pores inside, and the external coating layer is dense and closed, so that the dielectric constant and thermal conductivity of the material can be effectively reduced without sacrificing the processability and reliability.

The invention discloses a negative photosensitive resin composition. The negative photosensitive resin composition comprises the following components: polyimide precursor resin, a triptycenyl cross-linking agent, a photoinitiator, a coupling agent and a solvent. A cured film obtained by carrying out low-temperature heat treatment on the negative photosensitive resin composition at 200 DEG C has excellent mechanical properties, thermal stability and chemical resistance and remarkably reduced dielectric constant.

The present application provides an ink composition, a packaging structure and a semiconductor device, and belongs to the technical field of organic packaging materials.The ink composition of the present application comprises a vinyl ether monomer and a vinyl-containing silane monomer.The ink composition of the present application uses two specific photocurable monomers in combination, wherein the vinyl ether monomer has a low dielectric constant, and the vinyl-containing silane monomer can further improve the film hardness, photocuring rate and other properties of the ink composition;thus, the ink composition of the present application has good comprehensive performance, a low dielectric constant, a curing rate > 88%, an average light transmittance > 98%, a viscosity < 25 cP, and can be used for inkjet printing.

This invention discloses a semiconductor device and its manufacturing method, relating to the field of semiconductor technology, for reducing parasitic capacitance between adjacent memory contacts and improving the driving capability of the semiconductor device. The semiconductor device includes: a substrate, bit line structures, memory contacts, and an isolation portion. The substrate has an active region. The bit line structures are formed on the substrate and contact a portion of the active region. The memory contacts and the isolation portion are formed between two adjacent bit line structures. The memory contacts contact another portion of the active region. The isolation portion isolates two adjacent memory contacts. The material contained in the isolation portion includes a low-k material. The manufacturing method of the semiconductor device is used to manufacture the semiconductor device provided by the above-described technical solution.

This invention provides a low-dielectric photosensitive polyimide precursor, a photosensitive resin composition, its preparation method, and its application. The low-dielectric photosensitive polyimide precursor is prepared by reacting a polymer obtained from the reaction of a dianhydride monomer and a diamine monomer with organosilazane segments. It is a block polymer with alternating organosilazane and organosilane segments. This structure effectively reduces the dielectric constant of the material while ensuring high adhesion and high heat resistance. The silazane groups introduced in this invention can be converted into SiO2 structures at high temperatures, further reducing the dielectric constant of the polyimide matrix and enhancing its heat resistance. In addition, the silazane groups can react with hydroxyl groups on the substrate surface to generate silanol groups, thereby significantly improving the adhesion strength between the polyimide and the substrate.

This invention provides a microwave dielectric ceramic material and its preparation method for low ESR capacitors, belonging to the field of ceramic materials technology. By optimizing the composition and ratio of the main material, sintering aid, and modifying additives, this invention achieves both low dielectric constant and low ESR (high Q value) while maintaining an extremely stable temperature coefficient, effectively solving the problem of simultaneously achieving dielectric performance and temperature stability in existing technologies. The microwave dielectric ceramic material provided by this invention can be sintered in a reducing atmosphere and can be used to prepare low ESR, high Q value, and narrow temperature coefficient copper electrode multilayer ceramic capacitors, avoiding silver migration phenomenon in silver-internal electrode MLCCs, effectively improving device reliability and lifespan. It has broad application prospects in high-end fields such as communication base stations, radar, medical equipment, military industry, and AI servers, and the microwave capacitors prepared from it have significant practical value and market application prospects.

A semiconductor structure and a method for forming the same, wherein the structure comprises: a substrate; a gate structure and a plurality of source / drain doping layers, the gate structure is located on the substrate, and the source / drain doping layers are located in the substrate on both sides of the gate structure; a first conductive structure and a second conductive structure, the first conductive structure is located on the source / drain doping layers, and the second conductive structure is located on the gate structure; a first filling opening which exposes the side wall of the first conductive structure and the gate structure; a first filling layer located in the first filling opening, and the first filling layer has a first air gap therein. Since there is no other filling material between the first conductive structure and the gate structure, the first filling layer has a larger filling space, and the cavity of the first air gap in the first filling layer is larger. When the cavity of the first air gap is larger, the dielectric constant between the first conductive structure and the gate structure is smaller, and the parasitic capacitance between the first conductive structure and the gate structure is smaller, so that the performance of the semiconductor structure finally formed is better.

The application discloses a kind of halogen-free high-frequency copper-clad plate and its manufacturing method, belong to copper-clad plate preparation technical field, manufacturing method is as follows: fluorine-containing mercaptan grafting polybutadiene, styrene-butadiene-styrene copolymer, dicyclopentadiene phenol epoxy resin, toluene, butanone, propylene glycol monomethyl ether are added into mixing machine, after stirring and mixing, initiator, active ester curing agent, diamond-based flame-retardant filler are added, stirring and mixing 2-4h, obtain resin glue liquid;Glass cloth is placed in resin glue liquid and immersed after taking out, baking, obtain prepreg;Prepreg is laminated, the copper-clad plate obtained by the application has lower dielectric constant, better flame-retardant property, higher heat dissipation performance, lower water absorption and good mechanical processing, etc.Advantages, in the field of communication, vehicle-mounted millimeter wave radar, internet of things, automobile electronics and other fields of high multilayer high-frequency circuit board have broad application prospect.

This invention belongs to the field of photoresist technology, specifically relating to a compound containing a multifunctional polysiloxane structure and its applications. The structural formula is selected from general formula I or general formula II. Based on an organosiloxane polymer, this invention introduces multifunctional reactive functional groups into the polymer structure through transesterification and free radical addition reactions. The hydrophilic / hydrophobic properties, temperature resistance, and chemical resistance can be improved by adjusting the types of monomers introduced. This compound is used to prepare a photoresist composition with a solvent, a monomer with ethylene unsaturated bonds, a photosensitizer, and other additives. This photoresist exhibits advantages such as low dielectric constant, good adhesion, high residual film rate, good UV transmittance, good patterning, and good chemical resistance.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, a gate electrode, a field plate, and an etch stop layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than a bandgap of the first nitride semiconductor layer. The third nitride semiconductor layer is doped with a dopant and disposed on the second nitride semiconductor layer. The gate electrode is disposed on the third nitride semiconductor layer. The field plate covers a portion of the gate electrode. The etch stop layer is disposed between the gate electrode and the field plate.

The invention relates to the technical field of photoelectric devices, and discloses an optical engine packaging structure and a preparation method thereof. The structure comprises an adapter plate structure, an electrical module, a first rewiring layer, an optical module and a packaging substrate, a containing space of the adapter plate structure comprises at least part of the thickness of the adapter plate structure, and a conductive structure is arranged in a penetrating mode in the thickness direction; the electrical module is arranged in the accommodating space and the front surface of the electrical module is exposed; the first redistribution layer is arranged on the adapter plate structure and is electrically communicated with the conductive structure and the electrical module; the optical module is arranged on the first rewiring layer, the front side faces the first rewiring layer, and an optical port is exposed to the external space and connected with an external optical device; the packaging substrate is arranged on the back surface of the adapter plate structure and is suitable for being electrically connected with the electrical module. According to the invention, the optical module is stacked on the electrical module, so that the warping is reduced, the signal transmission is improved, the packaging size is reduced, and the process is simple.

The invention provides a high-thermal-conductivity epoxy resin composite insulating material for motor insulation and a preparation method thereof, and belongs to the technical field of epoxy resin composite materials. The composite material is prepared from the following raw materials in parts by mass: 10-20 parts of epoxy resin, 3-5 parts of a curing agent and 8-15 parts of inorganic particles, the inorganic particles comprise aluminum oxide, boron nitride and silicon dioxide with different particle sizes. According to the invention, through a multi-scale and multi-shape particle compounding strategy, an efficient heat-conducting network is constructed, the interface compatibility and dielectric property are optimized, the heat-conducting property is improved, the good insulating ability is kept, and the requirement of main insulation of a high-power generator on the comprehensive performance of the material is met.

The invention provides a resin composition and application thereof, a layer-adding film and a preparation method and application thereof, and belongs to the technical field of composite materials. The resin composition is prepared from the following components in parts by mass: 10 to 30 parts of modified benzoxazine prepolymer; 10 to 40 parts of modified polyphenyl ether resin; 1-5 parts of an initiator; and 100 to 300 parts of an inorganic filler. The modified benzoxazine prepolymer is synthesized from raw materials including allyl benzoxazine and a diamine compound containing a benzocyclobutene structure. According to the present invention, the diamine compound containing the benzocyclobutene structure is adopted to modify the allyl benzoxazine, and the mass parts of the modified benzoxazine prepolymer, the modified polyphenyl ether resin, the initiator and the inorganic filler in the resin composition are controlled, such that the dielectric property and the heat resistance of the resin composition can be significantly improved; and the film-forming property is excellent, and the requirement of a layer-adding film is met.

This invention relates to the field of new energy vehicle battery pack accessories technology, and discloses an ICCS integrated busbar mechanism and its processing technology. The mechanism includes an FPCA module, an aluminum busbar, an insulating bracket, and series aluminum busbars. The FPCA module is mounted on the insulating bracket to form an independent module. Its flexible circuit board uses a modified fluorinated polyimide insulating substrate, which is polymerized from 2,2'-bis(trifluoromethyl)biphenyl-4,4'-diamine and pyromellitic dianhydride in a specific ratio. The aluminum busbar is soldered to the acquisition pad of the FPCA module, and the series aluminum busbars are connected to the aluminum busbars of each module. The processing technology includes hot-pressing copper-clad board fabrication, reflow soldering, ultrasonic welding of the aluminum busbar, and laser welding of the aluminum busbars. This invention improves the high-temperature resistance and low dielectric properties of the insulating substrate, ensuring the electrical reliability of the busbar mechanism for high-current transmission and signal acquisition under complex operating conditions.

This invention relates to an insulating and microwave-absorbing liquid silicone material and its preparation method, belonging to the field of shielding materials technology. The liquid silicone material comprises: 38-45 wt% carbonyl iron powder, 5.5-7.2 wt% fluorinated modified silicone oil, 5-8 parts reactive diluent, 0.2-0.3 parts defoamer, and 0.1-0.15 parts leveling agent, with the balance being liquid silicone rubber base. The fluorinated modified silicone oil is prepared by a substitution reaction between tetraethylenepentamine and allyl chloride to obtain intermediate 1, followed by hydrosilylation with hydrogen-containing silicone oil to obtain intermediate 2, and finally by a substitution reaction with trifluoroiodopropane to introduce a fluorine structure. The polyamine in the molecule chelates with the carbonyl iron powder through a multidentate chelation effect, forming a dense organosilicon insulating layer on the iron powder surface, increasing the volume resistivity. Simultaneously, the fluorine structure reduces the surface energy of the filler, improves dispersibility and filling fluidity, and reduces the system viscosity. Furthermore, by optimizing impedance matching and enhancing interfacial polarization loss, the microwave absorption performance is significantly improved.

The application discloses a kind of high surface natural micropore structure regulation-based high surface withstand voltage polyimide and preparation method and application thereof, belong to high voltage insulating material technical field, after drying diamine is dissolved in solvent A, then add dianhydride, after stirring uniformly, obtain polyamide acid solution;Add pore forming agent again, high-speed stirring is uniformly dispersed, obtain mixed viscous solution C;After coating, drying, imidization high temperature heating, and natural cooling, immerse in liquid B and extract pore forming agent, after drying, obtain high surface natural micropore structure regulation-based high surface withstand voltage polyimide.The polyimide surface has natural pore structure, surface is along the surface of electric field, and the through-hole structure is densely distributed along the surface of electric field, and the electron is easy to drop into the through-hole structure in the jumping multiplication process when flashover, and it is difficult to return to the surface, so that the secondary electron multiplication process is inhibited, the probability of forming secondary electron avalanche is reduced, so as to realize the improvement of surface withstand voltage.