4415results about How to "Low dielectric constant" patented technology

A method for forming a silicone polymer insulation film having a low relative dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silicon-containing hydrocarbon compound expressed by the general formula SialphaObetaCxHy (alpha, beta, x, and y are integers) to the reaction chamber of the plasma CVD apparatus. The silicon-containing hydrocarbon compound has at most two O-CnH2n+1 bonds and at least two hydrocarbon radicals bonded to the silicon. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low relative dielectric constant.

A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si-O-Si or Si-N-Si groups with organic side groups attached to the backbone.

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 .mu.m ICs, or when copper is used as conductor in future ICs.

Air gaps may be provided in a self-aligned manner with sub-lithography resolution between closely spaced metal lines of sophisticated metallization systems of semiconductor devices by recessing the dielectric material in the vicinity of the metal lines and forming respective sidewall spacer elements. Thereafter, the spacer elements may be used as an etch mask so as to define the lateral dimension of a gap on the basis of the corresponding air gaps, which may then be obtained by depositing a further dielectric material.

Methods and apparatus are provided for processing a substrate with a bilayer barrier layer. In one aspect, the invention provides a method for processing a substrate including depositing a nitrogen containing barrier layer on a substrate surface and then depositing a nitrogen free barrier layer thereon. The barrier layer may be deposited over dielectric materials, conductive materials, or both. The bilayer barrier layer may also be used as an etch stop, an anti-reflective coating, or a passivation layer.

An oligomer, uncured polymer or cured polymer comprising the reaction product of one or more polyfunctional compounds containing two or more cyclopentadienone groups and at least one polyfunctional compound containing two or more aromatic acetylene groups wherein at least some of the polyfunctional compounds contain three or more reactive groups. Such oligomers and uncured polymers may be cured to form cured polymers which are useful as dielectrics in the microelectronics industry, especially for dielectrics in integrated circuits.

Specific embodiments of the invention provide a silicon-carbide-type or silicon oxycarbide (also often called carbon-doped-oxide [CDO] or organosilicate glass) capping material and method for depositing this capping material on ELK films which are used as a dielectric material in integrated circuits. The ELK film may include any ELK film including but not limited to inorganic, organic and hybrid dielectric materials and their respective porous versions. The silicon-carbide-type material may be an amorphous silicon carbide type material such as the commercially available BLOk™ material, or a carbon-doped oxide material such as the commercially available Black Diamond™ both of which are developed by Applied Materials of Santa Clara, Calif. The amorphous silicon carbide (a-SiC) material is deposited using a plasma process in a non-oxidizing environment and the CDO-type material is deposited using an oxygen-starved plasma process. The non-oxidative or oxygen-starved plasma processes do not significantly degrade the underlying film's chemical and electrical properties. The CDO material offers the advantageous property of having a lower dielectric constant value of less than 3.5 as opposed to the a-SiC material which has a dielectric constant of approximately 4.5. The CDO material besides, having a lower dielectric constant also has a superior adhesion characteristics to the underlying ELK material. However, experiments have indicated that despite its higher dielectric constant, the a-SiC-type material (e.g. BLOk™) may be used to generate capped ELK films with similar or even reduced dielectric constants relative to lower k capped films, and may provide composite (i.e. ELK+cap) structures exhibiting superior k stability.

The present invention relates to ultra-large scale integrated (ULSI) interconnect structures, and more particularly to patternable low dielectric constant (low-k) materials suitable for use in ULSI interconnect structures. The patternable low-k dielectrics disclosed herein are functionalized polymers that having one or more acid-sensitive imageable functional groups.

Printed antenna devices are provided, which can operate at RF and microwave frequencies, for example, while simultaneously providing antenna performance characteristics such as high gain/directivity/radiation efficiency, high bandwidth, hemispherical radiation patterns, impedance, etc., that render the antennas suitable for voice communication, data communication or radar applications, for example. Further, apparatus are provided for integrally packaging such printed antenna devices with IC (integrated circuit) chips (e.g., transceiver) to construct IC packages for, e.g., wireless communications applications.