176results about How to "Low dielectric constant" patented technology

Methods and apparatus are provided for processing a substrate with a bilayer barrier layer. In one aspect, the invention provides a method for processing a substrate including depositing a nitrogen containing barrier layer on a substrate surface and then depositing a nitrogen free barrier layer thereon. The barrier layer may be deposited over dielectric materials, conductive materials, or both. The bilayer barrier layer may also be used as an etch stop, an anti-reflective coating, or a passivation layer.

At least one electrode pad is formed above the surface of a semiconductor substrate. A multilevel interconnection configuration is formed between the electrode pad and the semiconductor substrate. The multiple levels of interconnections in the multilevel interconnection configuration are insulated from one another by an insulating film of low dielectric constant. A dummy interconnection configuration is formed at least within the insulating film around the periphery of the electrode pad.

A microfluidic system comprising: at least one microfluidic channel, the inner surface of which is fluorinated or fluorous; and a pump for supplying a flow of an aqueous medium containing chemical reagents or assay components to said microfluidic channel. Preferably, the apparatus further comprises a supply of a non-aqueous medium which is compatible with the surface of the microfluidic channel but immiscible with the aqueous medium, such as a perfluorocarbon solvent, for forming a sheath around the flowing aqueous medium whereby the aqueous medium is suspended away from the surface of the microfluidic channel. Also provided are methods for carrying out a chemical reaction or a biological assay in the microfluidic systems of the subject matter disclosed herein.

An RFID tag comprising an antenna assembly, including a shielding layer comprising an electromagnetic shielding material, a radio frequency loop antenna, and a spacer comprising a spacer material having a permittivity less than about 2 interposed between the antenna and the shielding layer is disclosed. Also disclosed are methods of manufacturing such an RFID tag. Also disclosed is the use of such an RFID tag for use in identifying a vehicle, for example in the context of fuel-purchase authorization.

There are provided a vinyl compound which is excellent in heat resistance and electric characteristics and excellent in reactivity by introducing a vinyl group into a terminal of a bifunctional polyphenylene ether oligomer, and a cured product thereof which has a high glass transition temperature, has a low dielectric constant and a low dielectric loss tangent and has the excellent properties of polyphenylene ether.

The invention discloses a polyimide/oligomeric silsesquioxane nano-hybrid film with low dielectric constant, which consists of diacid anhydride monomers, diamine monomers and oligomeric silsesquioxane, wherein, the mass content of the oligomeric silsesquioxane is 0.1%-30%, and the mol ratio of the diamine monomers to the diacid anhydride monomers is 1:1-1.1. The polyimide/oligomeric silsesquioxane nano-hybrid film has the advantages of low dielectric constant and maintaining the original excellent properties of the polyimide matrix resin. The preparation method of the invention can obviously improve the miscibility among the oligomeric silsesquioxane, the reactant and the polymer matrix, which causes the oligomeric silsesquioxane to be easily and evenly dispersed in the polyimide resin by nano size to obtain organic-inorganic hybrid materials with excellent comprehensive properties; and the polyimide/oligomeric silsesquioxane nano-hybrid film has wide application prospect in the aspects of electrical engineering, electron, information, military, aeronautics, astronautics, etc.

The invention provides a thermosetting resin composition comprising a bifunctional dihydrobenzoxazine compound and an epoxy compound, and provides a thermosetting resin molding obtained by thermally curing the thermosetting resin composition. The molding has excellent electric properties of low dielectric constant and low dielectric loss tangent. The resin composition comprises an epoxy compound and a bifunctional dihydrobenzoxazine compound of the following general formula (1), wherein the equivalent ratio of the epoxy compound to the bifunctional dihydrobenzoxazine compound is 1/(0.1 to 20):

wherein R represents a linear alkylene group having at least 2 carbon atoms, or a branched alkylene group derived from it by substituting the hydrogen atom therein with an alkyl group, and the hydrogen atom of the benzene ring may be substituted with an alkyl group or an alkoxy group.

A method of copolymerizing cyclic olefins and polar vinyl olefins, a copolymer produced by the method, and an optical anisotropic film including the copolymer are provided. According to the copolymerization method, a cyclic olefin and a polar vinyl olefin can be effectively copolymerized using a catalyst system composed of a compound containing a group 13 element and a radical initiator. The resulting copolymer is transparent, and has high adhesion, thermal stability, optical anisotropy and strength, and a low dielectric constant. The optical film including the copolymer can be used as a plastic lens, a polarizer protective film, an adhesive film, and a compensation film, and in a LCD display.

A production process of a perforated porous resin base, comprising Step 1 of impregnating the porous structure of a porous resin base with a liquid or solution; Step 2 of forming a solid substance from the liquid or solution impregnated; Step 3 of forming a plurality of perforations extending through from the first surface of the porous resin base having the solid substance within the porous structure to the second surface in the porous resin base; and Step 4 of melting or dissolving the solid substance to remove it from the interior of the porous structure, and a production process of a porous resin base with the inner wall surfaces of the perforations made conductive, comprising the step of selectively applying a catalyst only to the inner wall surfaces of the perforations to apply a conductive metal to the inner wall surfaces.

The invention relates to high performance resin systems used as dielectric materials, in particular to a low dielectric high heat-resistant epoxy resin composition and its preparation method. Based on the technical problem of poor compatibility in existing polyphenylene ether modified epoxy resin, the invention puts forward the scheme of using polyphenylene ether grafted maleic anhydride and an active diluent to reduce the system viscosity so as to solve the compatibility of polyphenylene ether and epoxy resin, thus improving the dielectric and mechanical properties of the system. By adding a proper amount of TGIC (triglycidyl isocyanurate) to improve the heat resistance of the resin system, a low dielectric and high heat-resistant high performance epoxy resin composition can be prepared.

This invention belongs to the technical field of memories and specifically relates to a resistive random access memory structure with an electric-field strengthened layer and a manufacturing method thereof. The resistive random access memory in the present invention can include a top electrode, a bottom electrode and a composite layer which is placed between the top electrode and the bottom electrode and have a first resistive switching layer and a second resistive switching and electric-field strengthened layer; the second resistive switching and electric-field strengthened layer cab be adjacent to the first resistive switching layer and have a dielectric constant lower than that of the first resistive switching layer. The electric-field distribution in the RRAM unit is adjustable.

The method for forming the copper wiring of the semiconductor device includes the steps of forming a first copper wiring on a semiconductor substrate having a predetermined low structure, implanting magnesium ion on the first copper wiring, forming a magnesium oxide layer on the first copper wiring by thermal treating the first copper wiring, and forming a second copper wiring on the magnesium oxide layer.

The invention discloses a wave-absorbing material and a preparation method thereof. The preparation method comprises the following steps of putting carbonyl iron powder in a routine form into a ball mill, carrying out ball milling to obtain sheet-shaped carbonyl iron powder, adding the sheet-shaped carbonyl iron powder into a reactor, adding deionized water and sodium hydroxide solids into the reactor to obtain a reaction system having a pH value of 11-14, carrying out a reaction of the reaction system at a temperature of 150-190 DEG C for 4-8h, carrying out cooling to a room temperature, collecting the cooled reaction products by a magnet, and carrying out drying to obtain the sheet-shaped carbonyl iron powder-ferriferrous oxide composite wave-absorbing material. The preparation method improves impedance matching, keeps or improves a magnetic loss capability and inhibits the skin effect so that the wave-absorbing material has good wave-absorbing performances in a wide frequency range.

A data transmission cable for connection to mobile devices, which has at least two insulated conductors (1, 2) twisted together into a pair. The pair is enclosed by an electric shield (7) over which a jacket (13) made of an insulating material is applied. To preserve the function of the cable even if it is subject to frequently alternating bending and torsional stresses, the two conductors (1, 2) insulated with a solid unfoamed material are twisted together with two first strands (4, 5) made of a foamed insulating material to form a core (S). The core (S) is enclosed by a foil (6) made of a foamed insulating material, and the shield (7) formed around the first foil (6) has at least one metal strip that is made of an electrically well-conducting material and is formed into a closed tubular sleeve.

An insulating-film-forming composition including an organic solvent and a hydrolysis-condensation product which is obtained by hydrolysis and condensation of a component (A) in the presence of a component (B).

The invention discloses an inductor and a method for forming the same. The inductor comprises a substrate, a low-k interlayer dielectric layer, an inductance coil and a protection layer, wherein the inductance coil is positioned on the low-k interlayer dielectric layer which is arranged on the surface of the substrate, and the protection layer is arranged on the surface of the inductance coil. Since the low-k interlayer dielectric layer is an interlayer dielectric layer between the semiconductor substrate and the inductance coil, dielectric constant between the inductance coil and the substrate is reduced, parasitic capacitance between the substrate and the inductance coil is reduced, and accordingly Q value of the inductor can be increased.

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first step, a dense SiOC thin film is CVD deposited from the organosilicon precursor having at least one alkyl group and at least one cleavable organic functional group, having retained therein at least a portion of the alkyl and cleavable organic functional groups. In a second step, the dense SiOC thin film is post annealed to effectively remove the volatile liquid or gaseous by-products, resulting in a porous low-dielectric constant SiOC thin film. The porous, low dielectric constant, SiOC thin films are useful as insulating layers in microelectronic device structures. Preferred porous, low-dielectric SiOC thin films are produced using di(formato)dimethylsilane as the organosilicon precursor.

The invention relates to a nitride ceramic fiber reinforced inorganic non-metal composite material and a preparation method thereof. The nitride ceramic fiber reinforced inorganic non-metal composite material matrix is ceramic of one or more of silicon carbide, silicon nitride, boron nitride, boron carbide, aluminum oxide, aluminum nitride, zirconium oxide, aluminium phosphate and zirconium phosphate, wherein the reinforced phase is nitride ceramic fiber. The preparation method comprises the following steps of: (1) preparing the nitride ceramic fiber into three-dimensional braided fabric, overlapped cloth or felt; (2) pretreating the braided fabric, overlapped cloth or felt before soaking; (3) soaking a matrix material precursor polymer or sol into the pretreated braided fabric, overlapped cloth or felt of the nitride ceramic fiber, heating and curing, and cracking at a high temperature to convert into ceramic. The composite material has low dielectric constant and dielectric loss, high oxidation resistance, high strength, high temperature resistance and high toughness, serves as a material with high temperature resistance and excellent bearing capacity, wave permeability and corrosion resistance, and has wide application.

A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride.

A composite dielectric material comprising a resin resulting from a polyvinylbenzyl ether compound and a dielectric ceramic powder dispersed therein is useful in the high-frequency region. A composite magnetic material comprising a polyvinylbenzyl ether compound and a magnetic powder is also provided as well as a flame retardant material comprising a polyvinylbenzyl ether compound and a flame retardant. These materials may be used in the fabrication of substrates, prepreg sheets, coated metal foils, molded items, and metal foil-clad substrates.

The present invention relates to fluorinated silicate glass (FSG) with low dielectric constant and improved gap-fill characteristics. In the present method, a fluorinated silicon source, an optional fluorine source, an optional carbon source, a hydrogen source, and an oxygenator are used as the reactant gases. Inert or carrier gas(es) may also be used. In accordance with the present invention, the reactant gas mixture does not comprise a silane compound having the general formula Si_xH_y, wherein x has a range of 1 to 2, y has a range of 4 to 6. The material deposited is thus referred to herein alternatively as “Si_xF_y-only FSG” or “Si_xF_y-only fluorinated oxide” (“SOFO”).

An electric insulated wire according to the present invention is formed by applying a first insulation coating made from polyimide resin having a repeating unit represented as in chemical formula (1) to an electric conductor directly or through an insulation layer made from a second insulation coating, after which the first insulation coating is baked, the polyimide resin including a quadrivalent aromatic group (X) having an aromatic ether structure, a bivalent aromatic group (Y₁) having an aromatic ether structure, and a bivalent aromatic group (Y₂) having a fluorene structure; the first insulation coating has a compound ratio (Y₁/Y₂) of the bivalent aromatic group having an aromatic ether structure to the bivalent aromatic group having a fluorene structure within a range from 30/70 to 80/20, when represented as a mole ratio.

The present invention provides a method for forming low dielectric constant inter-metal dielectric layer. The method includes providing a semiconductor substrate and forming a first dielectric layer on the semiconductor substrate. Conductor structures are formed in the first dielectric layer. The partial first dielectric layer is removed by using the conductor structures as etching mask. A second dielectric layer is formed between the conductor structures, which has a dielectric constant smaller than the first dielectric layer. The second dielectric layer also alternatively has air voids contained therein to reduce dielectric constant.

The invention relates to a fluorine-containing flexible-rigid polyimide film, and a preparation method and application thereof. The film comprises flexible fluorine-containing aromatic diamines, aromatic dianhydride-1, rigid aromatic diamines and rigid aromatic dianhydrides. The preparation method of the film comprises the following steps: preparing a fluorine-containing flexible-rigid block polyamic acid resin solution from flexible fluorine-containing aromatic diamines, and carrying out solvent removal and imidization to finally form the polyimide film. The polyimide film can be used as an insulation film base plate material for flexible printed circuits, an insulation film base plate material for flexible photoelectric display devices and an insulation film base plate material for flexible film solar cells. The resin has low thermal expansion coefficient, low dielectric constant and low water absorptivity, and has important application value in the fields of micro-electronics, photoelectric display and the like.

A composition for forming a porous dielectric film which is prepared by dissolving a siloxane-based precursor containing hydroxyl groups or alkoxy groups and a pore-generating material together with a condensation catalyst generator capable of curing the siloxane-based resin precursor, in an organic solvent. The porous dielectric film has a low dielectric constant and improved physical properties and is formed by coating the composition onto a substrate, followed by light exposure to cause polycondensation at low temperature. A method for forming a negative pattern of a porous dielectric film is also provided without the use of a photoresist by exposing the coated film to light through a mask, and removing unexposed regions with a developing agent.

A resist polymer that has nano-scale patterns located therein that are in the form of sub lithographic hollow pores (or openings) that are oriented in a direction that is substantially perpendicular with that of its major surfaces (top and bottom) is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material. After the transferring of the nano-scale patterns into the substrate, nano-scale voids (or openings) having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.

The present invention comprises methods and compositions of dielectric materials. The dielectric materials of the present invention comprise materials having a dielectric constant of more than 1.0 and less than 1.9 and/or a dissipation factor of less than 0.0009. Other characteristics include the ability to withstand a wide range of temperatures, from both high temperatures of approximately +260° C. to low temperatures of approximately −200° C., operate in wide range of atmospheric conditions and pressures (e.g., a high atmosphere, low vacuum condition such as that found in the outer-space as well as conditions similar to those found at sea level or below sea level). The dielectric materials of the present invention may be used in the manufacture of composite structures that can be used alone or in combination with other materials, and can be used in electronic components or devices such as RF interconnects.

The invention discloses a low-dielectric epoxy resin composite material filled with meso-porous silicon and a preparation method thereof. The composite material comprises 100 parts of epoxy resin, 1-20 parts of meso-porous silicon, 60-90 parts of curing agent and 0.1-1 part of accelerant. According to the low-dielectric epoxy resin composite material filled with meso-porous silicon, a fluorine-containing polymer is introduced by synthesizing meso-porous silicon and performing graft modification on the same, so the hydrophilicity of the composite material is reduced, the interface compatibility is improved, the dielectric constant of the composite material is significantly reduced, and the thermal stability and the mechanical property are improved. Therefore, the composite material can be widely applied to the field of electronic packaging. In addition, the preparation method of the invention is relatively simple, and easy to implement and has good development and application prospects.

The invention belongs to the field of polymer dielectric materials and discloses an ultralow dielectric constant film with a special sandwich structure and a preparation method thereof. The ultralow dielectric constant film with the sandwich structure comprises a three-layer structure, namely a compact layer 1, an electrospinning layer and a compact layer 2 sequentially. The invention also discloses the preparation method for the ultralow dielectric constant film with the sandwich structure, which comprises the following two key steps of: directly performing electrospinning on a compact bottom film; and performing pressurization heat treatment. Through the adjustment of a material structure, multiple problems of a single electrospinning film are solved, lower dielectric constants are kept, the ultralow dielectric constant film which is provided with upper and lower smooth and compact surfaces and has the sandwich structure can be obtained, the defects of a rough surface and an over-high water adsorption ratio of the conventional electrostatic spinning film are overcome, and the preparation method is similar to that of the conventional single electrospinning film and is easy to implement.

The invention belongs to the technical field of wires and cables, and particularly relates to a novel flame-retardant fireproof cable which comprises two or four insulated wires, an aluminum-plastic composite tape, a braided layer, an internal sheath, an armoring layer and an external sheath. The insulated wires are covered with the aluminum-plastic composite tape; the braided layer covers the aluminum-plastic composite tape; the internal sheath covers the braided layer in an extrusion manner; the armoring layer covers the internal sheath; and the external sheath covers the armoring layer in an extrusion manner. The novel flame-retardant fireproof cable is characterized in that each insulated wire is composed of a conductor, a polyethylene insulating layer covering the conductor, a ceramic insulating layer covering the polyethylene insulating layer in an extrusion manner; a guide core is arranged outside the insulated wires, and the guide core and the insulated wires are covered with the aluminum-plastic composite tape. The novel flame-retardant fireproof cable has the advantages of low cost, convenience in manufacturing, short manufacturing time, excellent flame retardant and fireproofing performance, short-circuit resistance and high cable control capacity.