49 results about "Diborane" patented technology

The invention discloses a hyperbranched flame retardant as well as a preparation method and application thereof. The flame retardant is prepared by the following steps: dehydrating and pre-polymerizing a boron-containing component (such as tetrahydroxy diborane) and dihydric alcohol (such as 1, 3-propylene glycol), and condensing with trihydroxymethyl phosphine oxide. 4 parts of the flame retardant is added into epoxy resin, phosphorus-containing free radicals can be released in a gas phase for quenching and smoke suppression, a compact boron-containing expanded carbon layer is formed in a condensed phase, and synergistic flame retardance is achieved. The hyperbranched structure can be embedded into an epoxy network, synchronous reinforcement and toughening are achieved, the impact strength is improved by 123.5%, and the tensile strength is improved by 47.7%. The flame retardant has efficient flame retardance (the limit oxygen index is 33.9%, UL-94V-0 level), high transparency and excellent mechanical properties, and is suitable for epoxy resin composite materials in the fields of electronic packaging, aerospace and the like.

Systems and methods for delivering a process gas having a desired diborane concentration to a processing volume of a processing chamber are provided. In one embodiment, a system includes a borane concentration sensor. The borane concentration sensor includes a body and a plurality of windows. Here, each window of the plurality of windows is disposed at an opposite end of the body and the body collectively defines a cell volume with the plurality of windows. The borane concentration sensor further includes a radiation source disposed outside the unit volume and adjacent to a first window of the plurality of windows, and a radiation detector disposed outside the unit volume and adjacent to a second window of the plurality of windows.

The application discloses a kind of efficient adsorption separation method of impurities in borane preparation process, belong to gas separation technical field.The method includes: after ZIF-8 powder is vacuum dried, with 3-aminopropyl triethoxysilane in anhydrous toluene at 80 ℃ reflux reaction 12-24 hours, after washing, dry and obtain amido functionalization NH2-ZIF-8 composite adsorbent;It is filled in vertical fixed bed adsorption tower, and under-30 ℃-20 ℃, 0.3-0.8MPa, the crude ethyl borane gas containing boron trifluoride is imported and is adsorbed at low temperature;After adsorption saturation, regenerate by 80 ℃ heating and vacuum extraction.The grafting amount of amido on the surface of NH2-ZIF-8 obtained by the method is 2.0-3.5mmol / g, specific high selectivity adsorption of BF3 is realized, sufficient adsorption sites are provided, and the adsorbent has strong regeneration performance.

The invention provides a hard alloy surface high-temperature-resistant protective coating and a preparation process thereof, and belongs to the field of superhard materials. The preparation process comprises the following steps: cleaning the hard alloy; etching and carrying out microwave plasma decarburization; diborane is pumped in for surface boronizing; sputtering and depositing a tantalum layer on the surface and performing reverse sputtering; and controlling the methane flow and carrying out chemical vapor deposition on the four-layer diamond coating. According to the method, the pretreated hard alloy is placed in vacuum tube furnace equipment, mixed gas of hydrogen and diborane is pumped into the vacuum tube furnace equipment for surface boronizing, then the hard alloy is placed in a plasma surface alloying furnace for surface sputtering deposition of a tantalum layer, and after reverse sputtering, four layers of diamond coatings are deposited through a chemical vapor deposition method. The prepared high-temperature-resistant protective coating on the surface of the hard alloy not only has better high-temperature resistance and corrosion resistance, but also has excellent adhesive force and wear resistance, so that the effect of prolonging the service life of the hard alloy is achieved.

The present invention relates to a stable equivalent body of 2, 2 ''-bis (1-phosphinoethyl)-1, 1''-diferrocene, which is useful as a ligand in various catalytic reactions including aromatic asymmetric hydrogenation, but is difficult to synthesize and / or separate and purify, and a method for efficiently producing the same, and more particularly, to a stable equivalent body of 2, 2 ''-bis (1-phosphinoethyl)-1, 1''-diferrocene, which is useful as a ligand in various catalytic reactions including aromatic asymmetric hydrogenation. The present invention provides: a diphosphine-diborane complex represented by general formula (1) (BH3) 2); and a method for producing the diphosphine-diborane complex, the method comprising reacting a magnesium source and an oxidizing agent with a phosphine-borane complex in this order.

The invention relates to the technical field of semiconductor production, in particular to a high-growth-rate EPI production method which comprises the following steps: S1, removing oxide on the surface of a silicon substrate by adopting in-situ hydrogen annealing and repairing lattice defects; a gradient temperature rising strategy is adopted in the preheating stage, and slip lines caused by thermal stress are reduced; s2, in a chemical vapor deposition reaction cavity, adopting a double-gas-path injection system, wherein in a main gas path, mixed gas of high-flow SiH2Cl2 and H2 is used as a main silicon source; in the auxiliary gas path, trace SiH4 and HCl are used for inhibiting gas phase nucleation and adjusting the surface reaction activity; s3, adopting a double-area temperature control reaction cavity, wherein a central area is a high-temperature area, and rapid deposition of silicon atoms is promoted; the marginal area is a low-temperature area and inhibits marginal lattice distortion; the pressure of the reaction cavity is controlled to be 50-100 Torr; s4, in-situ doping and real-time monitoring: synchronously introducing phosphorane or diborane in the growth process, monitoring the doping concentration fluctuation in real time through a light emission spectrum, and feeding back and adjusting the gas proportion.

A method for forming a silicon boron nitride layer is provided. The method includes positioning a substrate on a susceptor in a process region within a process chamber; heating the susceptor that holds the substrate; and introducing a first flow of a first process gas and a second flow of a second process gas into the process region. The first flow of the first process gas contains silane, ammonia, helium, nitrogen, argon, and hydrogen. The second flow of the second process gas contains diborane and hydrogen. The method also includes forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas arriving in the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.

Methods, systems, and devices for plasma-doped trenches for memory are described. A method for forming a memory device with plasma-doped trenches may include forming a stack of materials having alternating layers of polysilicon and oxide materials. A trench may be etched in the stack and doped using a plasma doping process. In some examples, the trench may be doped by applying Boron fluoride, diborane, methane, or Boron and Carbon Hydride gases diluted with Hydrogen (H2) or Helium to the sidewalls and bottom surface of the trench, which may dope portions of the polysilicon material with Boron, Carbon, Fluorine, Helium, or Hydrogen.

A method of manufacturing a semiconductor memory device includes the following steps. A plurality of container-type capacitors are formed on the substrate. The sacrificial dielectric material is etched between the container-type capacitors to remove it, thereby forming a gap between the container-type capacitors and exposing an upper electrode of each container-type capacitor. And the upper electrode of each container type capacitor is subjected to diborane treatment in the gaps. And depositing a silicon seed layer on the surface of the upper electrode in the gap. A boron-doped polysilicon germanium layer is deposited on the silicon seed layer within the gap using silane, germane, and diborane. According to the manufacturing method, before boron-doped polycrystalline silicon germanium is deposited by using silane, germane and diborane traditionally, the steps of diborane treatment and silicon seed layer deposition are added, so that the situation that an unfilled gap is generated in a high-aspect-ratio gap between high-aspect-ratio container type capacitors is avoided.

The invention provides a method for preparing diborane. The method comprises the following steps: in an inert atmosphere, taking halogenated hydrocarbon as raw material gas, carrying out first-step reaction on the halogenated hydrocarbon and hydroboron dissolved in an ether solvent to generate an intermediate, and then dropwise adding organic acid, and carrying out second-step reaction on the organic acid and the obtained intermediate to generate diborane gas. The invention also provides a diborane preparation system used in the method. According to the method and the system, halogenated hydrocarbon, hydroboron and organic acid are used as raw materials, diborane is prepared through two-step reaction, gas-liquid reaction and liquid-liquid reaction are carried out step by step, gas-solid reaction is avoided, the reaction rate is high, and consumed time is short; meanwhile, the raw material halogenated hydrocarbon does not react with the ether solvent, the halogenated hydrocarbon and the ether solvent do not react to generate byproducts, impurities generated in the reaction process are hydrocarbon and hydrogen which are easy to separate, later-stage diborane purification is facilitated, separation and purification are simple, the cost is low, and the obtained diborane product is high in yield and purity.

The present invention belongs to the field of crystalline silicon solar cells and relates to a heterojunction solar cell and a preparation method thereof. Aiming at the technical problems of imperfect design of the P-type doping layer in the prior art of heterojunction solar cells, such as poor thermal stability of the P-type doping layer resulting in easy diffusion of B atoms into the amorphous silicon intrinsic layer, low optical bandgap width of the P-type doping layer formed by doping with pure diborane gas, and increased defect state density and emitter recombination current density of boron-doped amorphous silicon due to doping with high-concentration diborane gas. This solution provides a heterojunction solar cell and a preparation method thereof. By designing the P-type doping layer into a laminated structure, including a first P-type doping layer deposited with trimethylboron gas in contact with the intrinsic amorphous silicon layer, and at least two overall laminated structures with increasing boron doping concentration deposited with trimethylboron and diborane gas, the preparation steps are simple and the cost is low, and the obtained heterojunction solar cell has excellent performance.

The application discloses a diborane preparation synthetic device and a synthesis process thereof, which comprise a base, a vacuum pump and a preparation cylinder. The preparation cylinder is used for extracting air in the preparation cylinder by the vacuum pump before preparation. The bottom end of the preparation cylinder is communicated with a collecting box. The bottom of the collecting box is fixedly connected with the base. The top of the collecting box is fixedly connected with the vacuum pump. The outer surface of the collecting box is fixedly connected with a protection assembly. The top of the protection assembly is communicated with the preparation cylinder. The position, close to the protection assembly, of the preparation cylinder is fixedly connected with a sealing ring. The top of the preparation cylinder is fixedly connected with a quantitative assembly. The application relates to the technical field of diborane production. The diborane preparation synthetic device and the synthesis process thereof are used for filtering gas after purification in a purification cylinder, thereby improving the quality of the gas and avoiding the influence of too many impurities accumulated in the preparation cylinder on the service life of the device, so that the influence of water flow on the purification of the gas is avoided.

Methods, systems, and devices for plasma-doped trenches for memory are described. A method for forming a memory device with plasma-doped trenches may include forming a stack of materials having alternating layers of polysilicon and oxide materials. A trench may be etched in the stack and doped using a plasma doping process. In some examples, the trench may be doped by applying Boron fluoride, diborane, methane, or Boron and Carbon Hydride gases diluted with Hydrogen (H2) or Helium to the sidewalls and bottom surface of the trench, which may dope portions of the polysilicon material with Boron, Carbon, Fluorine, Helium, or Hydrogen.

The invention discloses a safe diborane mixed gas filling method, and relates to the technical field of gas filling, diborane decomposition by-product concentration is collected in real time through double sensing units, filling pressure, flow velocity and temperature are correlated and dynamically corrected through a closed-loop regulation and control algorithm, full-process safety control is matched, hidden decomposition risks are solved, and the safety of diborane mixed gas is guaranteed. The device has the advantages that the concentration of diborane decomposition byproducts is captured in real time through the double sensing units, the concentration of the byproducts is associated with the filling pressure, the flow velocity and the temperature by means of a closed-loop regulation and control algorithm and dynamically corrected, and full-process management and control such as gas cylinder pretreatment before filling and pipeline residual gas recovery and harmless treatment after filling are matched; the core defects that in the prior art, a by-product and filling parameter linkage mechanism is lacked, and hidden decomposition risks cannot be recognized are overcome.

A process for producing diborane is provided which includes mixing boron halide with borohydride ionic liquid for providing a liquid reaction mixture, the liquid reaction mixture chemically reacting for producing gaseous diborane. There is also provided a related composition for producing diborane which includes boron halide and borohydride ionic liquid. Solvents are not needed in the mixture or in the composition to produce the diborane.

The invention discloses a light component removal tower for producing high-purity diborane, and relates to the technical field of light component removal towers, the light component removal tower comprises a main body structure, the main body structure comprises a tower body, a condenser is arranged at the top of an inner cavity of the tower body, an upper pressing plate is arranged at the bottom of the condenser, a lower pressing plate is arranged at the bottom of the upper pressing plate, and a redistributor is arranged at the bottom of the lower pressing plate; through the design of the self-cleaning assembly, the blocked filter plate can be automatically cleaned, manual intervention is not needed, the problem that a filter screen is blocked due to impurity deposition is effectively solved, stubborn impurities such as solid particles and polymers with high adhesive force on the surface of the filter plate can be effectively removed through the synergistic effect of a cleaning roller, a helical gear ring and a gear, and the service life of the filter plate is prolonged. The normal filtering function of the filtering plate is guaranteed, efficient gas-liquid mass transfer in the light component removal tower is maintained, meanwhile, the defect that shutdown is needed in traditional manual cleaning is overcome, and continuous production of the light component removal tower is achieved.

The present invention belongs to the technical field of preparing diborane, and in particular, provides a process for preparing high-purity diborane. The process comprises the steps of using excess boron trifluoride and potassium borohydride as raw materials, reacting and preparing the diborane under low-temperature conditions, complexing the boron trifluoride in the diborane, distilling the crude diborane, reusing the boron trifluoride, and recovering the solvent. The present invention provides a safer, lower-cost, waste-liquid-free, and continuously waste-liquid-free preparation process for producing high-purity diborane, provided that the boron trifluoride used as the reaction raw material is in excess.

The invention discloses a preparation method of a high-ductility DLC (Diamond Like Carbon) film, which comprises the following steps: preparing an original DLC film in a vacuum environment; injecting diborane gas into the surface of the original DLC film, and maintaining for a preset time; and enabling diborane on the surface of the original DLC film to react at a preset temperature, so as to form a boron-doped DLC film layer on the surface of the original DLC film, thereby obtaining the high-ductility DLC film. According to the technical scheme, the ductility of the DLC film can be effectively improved under the condition that the performance of the DLC film is not damaged, and the cost is low.

The present application relates to diborane purification technical field, and disclose an electronic diborane purification device, including: base, the top of base is connected with reaction tube, the top of reaction tube is connected with top cover, the top of top cover is connected with pipeline, the pipeline is equipped with micro flow controller, the bottom of base is connected with cold trap equipment through connecting pipe, the outside of reaction tube is equipped with heating assembly. The present application can be automatically sealed when the reaction tube is broken during the reaction, so that the leaked diborane is isolated and sealed, avoiding the leakage of diborane to the outside to harm the staff, through the separation of driving heating tube and arc plate and reaction tube, the gap between multiple arc plates becomes larger, so that the diborane in the isolation sleeve can be extracted faster during subsequent processing, the speed of extracting diborane is improved, and the processing efficiency is improved.

The utility model provides a low-temperature sample introduction system for diborane sample gas. The low-temperature sample introduction system comprises a sample introduction pipeline, a carrier gas pipeline, a cooling unit and a switching valve assembly, the sample introduction pipeline and the carrier gas pipeline are respectively connected to the switching valve assembly; wherein the switching valve assembly comprises a quantitative loop and a six-way valve connected with the quantitative loop, the quantitative loop is communicated with the sample introduction pipeline, and the six-way valve is communicated with the carrier gas pipeline; the cooling unit comprises a cooling fan and a pipeline cooling device arranged on the sample feeding pipeline and the carrier gas pipeline; a diborane sample air valve, a purging valve and a vacuumizing valve are arranged on the sample feeding pipeline. The low-temperature sampling system disclosed by the utility model is used for carrying out low-temperature pretreatment on diborane sample gas, so that the decomposition of diborane is effectively inhibited, and the sampling accuracy of the diborane sample gas is ensured.

The method comprises providing a partially manufactured semiconductor substrate 3D structure in a chamber, the 3D structure comprising a side wall and a plurality of openings in the side wall leading to a plurality of features having a plurality of internal regions through which the openings are fluidly accessible, and depositing a tungsten nucleation layer on the plurality of features using one or more deposition cycles, each deposition cycle comprising (a) administering diborane to the chamber two or more times without purging between diborane administrations, (b) purging the chamber after step (a), and (c) administering tungsten hexafluoride to the chamber one or more times after step (b), wherein purging is performed each time tungsten hexafluoride is administered.

The invention relates to the technical field of diborane safety production equipment, in particular to diborane safety production equipment with a protection function, which comprises an anti-explosion aeration tank body, a connecting mechanism is arranged in the anti-explosion aeration tank body, and a quick replacement mechanism is arranged in the anti-explosion aeration tank body. The connecting mechanism can automatically communicate a gas conveying pipeline in the anti-explosion aeration tank body with the sealing tank, the quick replacement mechanism comprises a replacement unit, the replacement unit is arranged in the anti-explosion aeration tank body and can replace the sealing tank full of gas, and the quick replacement mechanism further comprises a protection unit. According to the diborane safety production equipment with the protection function, the connecting mechanism, the replacement unit and the protection unit are arranged, so that the problem that the inflation efficiency is low due to many step operations when the equipment is used can be effectively solved.

The invention provides a gas chromatography device for detecting impurities in diborane, the gas chromatography device has the characteristics of high safety, high integration level, high sensitivity and simplicity and convenience in operation, a plasma emission detector is combined with a helium carrier gas system, so that the explosion risk caused by the use of traditional hydrogen is avoided, and the detection accuracy of impurities in diborane is improved. Meanwhile, by optimizing the chromatographic column combination and the multi-valve switching flow path design, efficient separation and all-component analysis of various impurities in diborane are achieved, the detection sensitivity smaller than 10 ppb can be achieved without multiple devices, the system cost, the maintenance difficulty and the operation complexity are remarkably reduced, and the detection efficiency is improved. The method is especially suitable for the precise quality control requirement of trace impurities of high-purity diborane in a semiconductor manufacturing process.

This invention belongs to the field of high-purity electronic chemicals, specifically relating to a method for preparing high-purity diborane. It addresses the problems in existing technologies regarding the difficulty in effectively removing impurities with boiling points close to diborane, and the impact of impurities such as metal ions and moisture in the raw materials on product purity. This invention utilizes a novel core-shell structured heterogeneous catalyst, MgO@ZrO2-Ir. 0 / Ir + This catalyst, functionalized with ionic liquid, exhibits high catalytic activity and hydrophobicity. It can selectively catalyze the hydrogenation conversion of light impurities under mild conditions. By employing mercapto-modified silica gel and a three-stage adsorption system, it deeply removes metal ions and trace amounts of moisture. Finally, through a combination of catalytic conversion and optimized dual-tower distillation, it effectively separates components with similar boiling points. This invention is applicable to high-end manufacturing fields such as semiconductors and photovoltaics.

The application provides a method for chemical vapor deposition of tungsten, which adopts a two-step nucleation method combined with a cyclic deposition process, that is, after forming a tungsten nitride layer for inhibiting the growth speed of tungsten, first, diborane is used to adsorb on the surface of the tungsten nitride layer to form high-activity nucleation sites, then, tungsten hexafluoride is introduced to react to form a first tungsten nucleation layer, then, the cyclic step of adsorption of silane and reaction with tungsten hexafluoride is repeated for multiple times, so as to form a second tungsten nucleation layer with a preset thickness by layer-by-layer accumulation, and finally, a tungsten main body layer is deposited, thereby effectively solving the problem that in the prior art, due to the discontinuous coverage or insufficient thickness of the nucleation layer at the bottom of a high-aspect-ratio contact hole, the hole is prematurely closed, and the internal part of the tungsten main body layer as a filling layer forms a hollow or a gap defect.

The invention discloses a preparation method of a microcrystalline silicon film, a solar cell and a preparation method thereof, and relates to the technical field of solar cells, and the preparation method comprises the steps: S1, carrying out the plasma processing of a monocrystalline silicon / polycrystalline silicon substrate on which an amorphous silicon passivation layer grows, and obtaining a primary sample; wherein the temperature is T1, and the reaction gas comprises at least one of phosphorane, diborane and trimethyl boron; s2, growing a seed crystal layer on the primary sample to obtain a secondary sample; s3, growing a microcrystalline silicon film on the secondary sample; the gap between the S2 and the S3 is not broken; in S2 and S3, the temperature is T2, and T2 is smaller than T1; the reaction gas comprises hydrogen, silane and doping gas, and the doping gas comprises at least one of phosphorane, diborane and trimethyl boron; the hydrogen-silicon ratio in the S3 is not higher than the hydrogen-silicon ratio in the S2. According to the preparation method, the field effect at the amorphous silicon / microcrystalline silicon interface is improved, the carrier transport characteristic of the cell is improved, and the cell efficiency is improved.

The utility model relates to mixed waste gas treatment equipment and a semiconductor process system. The mixed waste gas treatment equipment comprises a first mixed waste gas filtering part, a second mixed waste gas filtering part and a recycling part, the device has the advantages that the upstream semiconductor process equipment is communicated with the first mixed waste gas filtering part and the second mixed waste gas filtering part, and the communication sequence of the first mixed waste gas filtering part and the second mixed waste gas filtering part can be randomly ranked according to actual requirements; therefore, impurities such as hydrogen chloride, trichlorosilane, hydrogen phosphide and diborane in the semiconductor epitaxial gas can be removed, hydrogen is obtained, and the semiconductor epitaxial gas can be recycled and purified to meet emission requirements.

The present invention belongs to the field of chemical engineering, and specifically relates to a high-purity diborane and its production method, industrial equipment, and application. It includes the production stage and purification stage of diborane. The production stage of diborane includes: the first BCl3 feeding: keeping the temperature of the reaction kettle at 20-22 °C, and uniformly adding BCl3 into the reaction kettle at a feeding rate of BCl3 controlled at 50-60 g / min, so that sodium borohydride reacts with boron trichloride; the second BCl3 feeding: controlling the temperature of the reaction kettle at 35-45 °C, starting to feed after the temperature reaches, and controlling the feeding rate at 35-45 g / min to react to produce diborane; the purification stage of diborane includes purifying the crude diborane by rectification. The production method of high-purity diborane of the present invention has the advantages of high yield, high purity, safety, and low cost.

The invention discloses a boronizing treatment system for a first wall surface of a fusion device. The device comprises a special gas safety cabinet, a gas transmission pipeline, a gas shunting box, a safety interlocking system, a vacuum pumping unit and a tail gas processor, the special gas safety cabinet is connected with the gas shunting box through a gas transmission pipeline; the gas shunting box is connected with the vacuum chamber of the EAST fusion device through a gas transmission pipeline; the safety interlocking system is used for detecting the running states of the special gas safety cabinet, the gas shunting box, the gas monitor, the vacuum pumping unit and the tail gas processor; the vacuum pumping unit is connected with the EAST fusion device; and the tail gas treater is connected with an exhaust port of the mechanical dry pump of the vacuum pumping unit. The invention provides a simple, economical and effective boronizing system for treating the surface of the first wall in a fusion device, deuterated diborane is used as a working material, pollution caused by C and H impurities in a B2D6 sample in a boronizing experiment can be avoided, and the safety of a future experiment is ensured.

A process for producing diborane is provided which includes mixing boron halide with borohydride ionic liquid for providing a liquid reaction mixture, the liquid reaction mixture chemically reacting for producing gaseous diborane. There is also provided a related composition for producing diborane which includes boron halide and borohydride ionic liquid. Solvents are not needed in the mixture or in the composition to produce the diborane.