18 results about "Diborane" patented technology

The application discloses a kind of efficient adsorption separation method of impurities in borane preparation process, belong to gas separation technical field.The method includes: after ZIF-8 powder is vacuum dried, with 3-aminopropyl triethoxysilane in anhydrous toluene at 80 ℃ reflux reaction 12-24 hours, after washing, dry and obtain amido functionalization NH2-ZIF-8 composite adsorbent;It is filled in vertical fixed bed adsorption tower, and under-30 ℃-20 ℃, 0.3-0.8MPa, the crude ethyl borane gas containing boron trifluoride is imported and is adsorbed at low temperature;After adsorption saturation, regenerate by 80 ℃ heating and vacuum extraction.The grafting amount of amido on the surface of NH2-ZIF-8 obtained by the method is 2.0-3.5mmol / g, specific high selectivity adsorption of BF3 is realized, sufficient adsorption sites are provided, and the adsorbent has strong regeneration performance.

The invention relates to the technical field of semiconductor production, in particular to a high-growth-rate EPI production method which comprises the following steps: S1, removing oxide on the surface of a silicon substrate by adopting in-situ hydrogen annealing and repairing lattice defects; a gradient temperature rising strategy is adopted in the preheating stage, and slip lines caused by thermal stress are reduced; s2, in a chemical vapor deposition reaction cavity, adopting a double-gas-path injection system, wherein in a main gas path, mixed gas of high-flow SiH2Cl2 and H2 is used as a main silicon source; in the auxiliary gas path, trace SiH4 and HCl are used for inhibiting gas phase nucleation and adjusting the surface reaction activity; s3, adopting a double-area temperature control reaction cavity, wherein a central area is a high-temperature area, and rapid deposition of silicon atoms is promoted; the marginal area is a low-temperature area and inhibits marginal lattice distortion; the pressure of the reaction cavity is controlled to be 50-100 Torr; s4, in-situ doping and real-time monitoring: synchronously introducing phosphorane or diborane in the growth process, monitoring the doping concentration fluctuation in real time through a light emission spectrum, and feeding back and adjusting the gas proportion.

A method of manufacturing a semiconductor memory device includes the following steps. A plurality of container-type capacitors are formed on the substrate. The sacrificial dielectric material is etched between the container-type capacitors to remove it, thereby forming a gap between the container-type capacitors and exposing an upper electrode of each container-type capacitor. And the upper electrode of each container type capacitor is subjected to diborane treatment in the gaps. And depositing a silicon seed layer on the surface of the upper electrode in the gap. A boron-doped polysilicon germanium layer is deposited on the silicon seed layer within the gap using silane, germane, and diborane. According to the manufacturing method, before boron-doped polycrystalline silicon germanium is deposited by using silane, germane and diborane traditionally, the steps of diborane treatment and silicon seed layer deposition are added, so that the situation that an unfilled gap is generated in a high-aspect-ratio gap between high-aspect-ratio container type capacitors is avoided.

The invention discloses a safe diborane mixed gas filling method, and relates to the technical field of gas filling, diborane decomposition by-product concentration is collected in real time through double sensing units, filling pressure, flow velocity and temperature are correlated and dynamically corrected through a closed-loop regulation and control algorithm, full-process safety control is matched, hidden decomposition risks are solved, and the safety of diborane mixed gas is guaranteed. The device has the advantages that the concentration of diborane decomposition byproducts is captured in real time through the double sensing units, the concentration of the byproducts is associated with the filling pressure, the flow velocity and the temperature by means of a closed-loop regulation and control algorithm and dynamically corrected, and full-process management and control such as gas cylinder pretreatment before filling and pipeline residual gas recovery and harmless treatment after filling are matched; the core defects that in the prior art, a by-product and filling parameter linkage mechanism is lacked, and hidden decomposition risks cannot be recognized are overcome.

A process for producing diborane is provided which includes mixing boron halide with borohydride ionic liquid for providing a liquid reaction mixture, the liquid reaction mixture chemically reacting for producing gaseous diborane. There is also provided a related composition for producing diborane which includes boron halide and borohydride ionic liquid. Solvents are not needed in the mixture or in the composition to produce the diborane.

The present application relates to diborane purification technical field, and disclose an electronic diborane purification device, including: base, the top of base is connected with reaction tube, the top of reaction tube is connected with top cover, the top of top cover is connected with pipeline, the pipeline is equipped with micro flow controller, the bottom of base is connected with cold trap equipment through connecting pipe, the outside of reaction tube is equipped with heating assembly. The present application can be automatically sealed when the reaction tube is broken during the reaction, so that the leaked diborane is isolated and sealed, avoiding the leakage of diborane to the outside to harm the staff, through the separation of driving heating tube and arc plate and reaction tube, the gap between multiple arc plates becomes larger, so that the diborane in the isolation sleeve can be extracted faster during subsequent processing, the speed of extracting diborane is improved, and the processing efficiency is improved.

The method comprises providing a partially manufactured semiconductor substrate 3D structure in a chamber, the 3D structure comprising a side wall and a plurality of openings in the side wall leading to a plurality of features having a plurality of internal regions through which the openings are fluidly accessible, and depositing a tungsten nucleation layer on the plurality of features using one or more deposition cycles, each deposition cycle comprising (a) administering diborane to the chamber two or more times without purging between diborane administrations, (b) purging the chamber after step (a), and (c) administering tungsten hexafluoride to the chamber one or more times after step (b), wherein purging is performed each time tungsten hexafluoride is administered.

The invention relates to the technical field of diborane safety production equipment, in particular to diborane safety production equipment with a protection function, which comprises an anti-explosion aeration tank body, a connecting mechanism is arranged in the anti-explosion aeration tank body, and a quick replacement mechanism is arranged in the anti-explosion aeration tank body. The connecting mechanism can automatically communicate a gas conveying pipeline in the anti-explosion aeration tank body with the sealing tank, the quick replacement mechanism comprises a replacement unit, the replacement unit is arranged in the anti-explosion aeration tank body and can replace the sealing tank full of gas, and the quick replacement mechanism further comprises a protection unit. According to the diborane safety production equipment with the protection function, the connecting mechanism, the replacement unit and the protection unit are arranged, so that the problem that the inflation efficiency is low due to many step operations when the equipment is used can be effectively solved.

The invention provides a gas chromatography device for detecting impurities in diborane, the gas chromatography device has the characteristics of high safety, high integration level, high sensitivity and simplicity and convenience in operation, a plasma emission detector is combined with a helium carrier gas system, so that the explosion risk caused by the use of traditional hydrogen is avoided, and the detection accuracy of impurities in diborane is improved. Meanwhile, by optimizing the chromatographic column combination and the multi-valve switching flow path design, efficient separation and all-component analysis of various impurities in diborane are achieved, the detection sensitivity smaller than 10 ppb can be achieved without multiple devices, the system cost, the maintenance difficulty and the operation complexity are remarkably reduced, and the detection efficiency is improved. The method is especially suitable for the precise quality control requirement of trace impurities of high-purity diborane in a semiconductor manufacturing process.

This invention belongs to the field of high-purity electronic chemicals, specifically relating to a method for preparing high-purity diborane. It addresses the problems in existing technologies regarding the difficulty in effectively removing impurities with boiling points close to diborane, and the impact of impurities such as metal ions and moisture in the raw materials on product purity. This invention utilizes a novel core-shell structured heterogeneous catalyst, MgO@ZrO2-Ir. 0 / Ir + This catalyst, functionalized with ionic liquid, exhibits high catalytic activity and hydrophobicity. It can selectively catalyze the hydrogenation conversion of light impurities under mild conditions. By employing mercapto-modified silica gel and a three-stage adsorption system, it deeply removes metal ions and trace amounts of moisture. Finally, through a combination of catalytic conversion and optimized dual-tower distillation, it effectively separates components with similar boiling points. This invention is applicable to high-end manufacturing fields such as semiconductors and photovoltaics.

The application provides a method for chemical vapor deposition of tungsten, which adopts a two-step nucleation method combined with a cyclic deposition process, that is, after forming a tungsten nitride layer for inhibiting the growth speed of tungsten, first, diborane is used to adsorb on the surface of the tungsten nitride layer to form high-activity nucleation sites, then, tungsten hexafluoride is introduced to react to form a first tungsten nucleation layer, then, the cyclic step of adsorption of silane and reaction with tungsten hexafluoride is repeated for multiple times, so as to form a second tungsten nucleation layer with a preset thickness by layer-by-layer accumulation, and finally, a tungsten main body layer is deposited, thereby effectively solving the problem that in the prior art, due to the discontinuous coverage or insufficient thickness of the nucleation layer at the bottom of a high-aspect-ratio contact hole, the hole is prematurely closed, and the internal part of the tungsten main body layer as a filling layer forms a hollow or a gap defect.

The invention discloses a boronizing treatment system for a first wall surface of a fusion device. The device comprises a special gas safety cabinet, a gas transmission pipeline, a gas shunting box, a safety interlocking system, a vacuum pumping unit and a tail gas processor, the special gas safety cabinet is connected with the gas shunting box through a gas transmission pipeline; the gas shunting box is connected with the vacuum chamber of the EAST fusion device through a gas transmission pipeline; the safety interlocking system is used for detecting the running states of the special gas safety cabinet, the gas shunting box, the gas monitor, the vacuum pumping unit and the tail gas processor; the vacuum pumping unit is connected with the EAST fusion device; and the tail gas treater is connected with an exhaust port of the mechanical dry pump of the vacuum pumping unit. The invention provides a simple, economical and effective boronizing system for treating the surface of the first wall in a fusion device, deuterated diborane is used as a working material, pollution caused by C and H impurities in a B2D6 sample in a boronizing experiment can be avoided, and the safety of a future experiment is ensured.

A process for producing diborane is provided which includes mixing boron halide with borohydride ionic liquid for providing a liquid reaction mixture, the liquid reaction mixture chemically reacting for producing gaseous diborane. There is also provided a related composition for producing diborane which includes boron halide and borohydride ionic liquid. Solvents are not needed in the mixture or in the composition to produce the diborane.

The invention provides a method for optimizing germanium-silicon epitaxial growth and a semiconductor device. The method comprises the following steps: forming shallow trench isolation, a gate structure and a source and drain region on a substrate, and forming trenches including sigma trenches and half sigma trenches in the source and drain region; a germanium-silicon epitaxial layer is selectively grown in the trench, first embedded germanium-silicon is formed in the sigma trench, an inclined plane layer of the germanium-silicon epitaxial layer inclining towards the shallow trench isolation is formed in the half sigma trench, and a hole with a wide upper part and a narrow lower part is formed at the same time; diborane gas is adopted to activate the surface of the germanium-silicon epitaxial layer in the groove to form an activated surface, then a boron-free silicon layer is formed on the activated surface, the boron-free silicon layer is etched, and only the boron-free silicon layer on the lower portion of the slope layer is reserved to serve as primary filling of the cavity; repeatedly carrying out hole filling for multiple times; and forming the cap layer. According to the method, the cavity in the half sigma trench can be filled, so that the half sigma trench is filled more fully, the germanium-silicon deficiency is improved, and the reliability of the device is improved.

The application discloses a controllable synthesis of Pt single atoms and a preparation method of the Pt single atoms and RuO2-IrO2 composite as an anode electrocatalyst and an electrode thereof. The steps are as follows: H2PtCl6 and tetra-methylammonium ethylborane are mixed and ground in a certain proportion, the mixture is then subjected to a closed heating reaction in a reaction kettle, and then is transferred to a vacuum reaction kettle to be subjected to calcination treatment again, so that PtNCB is obtained. A coating solution containing the prepared PtNCB and RuCl3 and IrCl3 precursor solutions is prepared, is uniformly coated on a substrate, and then the generated electrode is dried, and the electrode containing the coating is sintered in a heating furnace, so that a RuO2-IrO2-PtNCB electrode is finally obtained. By skillfully controlling the amount of the organic diboron compound tetra-methylammonium ethylborane, PtNCB precisely protected by Pt single atoms is successfully synthesized, and RuO2-IrO2 is co-catalyzed as an anode electrocatalyst. The Pt single atom catalyst of the application not only has excellent sintering resistance, but also has excellent electrocatalytic activity.

Feature fill processes including deposition-inhibition-deposition operations use a boron-containing compound treatment to tune an inhibition profile. In some embodiments, a feature is non-conformally treated with a boron-containing compound such as diborane (B2H6) prior to an inhibition treatment. Treating the features with a boron-containing chemistry increases the inhibition effect of the subsequently applied inhibition treatment. The diffusion of diborane is easier to control than the diffusion of an inhibition gas such as nitrogen trifluoride (NF3), facilitating control of the inhibition profile.

The invention relates to a preparation method of 2-(2-fluoro-4-biphenyl) propionic acid. The preparation method comprises the following steps: by taking 2, 4-difluoronitrobenzene as an initial raw material, carrying out substitution reaction on the 2, 4-difluoronitrobenzene and diethyl 2-methylmalonate to obtain diethyl 2-(3-fluoro-4-nitrophenyl)-2-methylmalonate; reducing the 2-(3-fluoro-4-nitrophenyl)-2-diethyl methylmalonate, so as to obtain 2-(4-amino-3-fluorophenyl)-2-diethyl methylmalonate; carrying out reduction on the 2-(3-fluoro-4-nitrophenyl)-2-diethyl methylmalonate to obtain 2-(4-amino-3-fluorophenyl)-2-diethyl methylmalonate; the preparation method comprises the following steps: diazotizing 2-(4-amino-3-fluorophenyl)-2-diethyl methylmalonate to obtain diazonium salt, and reacting the diazonium salt with tetrahydroxy diborane or boric acid ester to obtain 2-(3-fluoro-4-boric acid phenyl)-2-diethyl methylmalonate or 2-(3-fluoro-4-boric acid pinacol ester phenyl)-2-diethyl methylmalonate; the preparation method comprises the following steps: carrying out Suzuki-Miyaura coupling on 2-(3-fluoro-4-boric acid phenyl)-2-diethyl methylmalonate or 2-(3-fluoro-4-boric acid pinacol ester phenyl)-2-diethyl methylmalonate and halogenated benzene to obtain 2-(2-fluoro-4-biphenyl)-2-diethyl methylmalonate; carrying out Suzuki-Miyaura coupling on the 2-(3-fluoro-4-boric acid pinacol ester phenyl)-2-diethyl methylmalonate or 2-(3-fluoro-4-boric acid pinacol ester phenyl)-2-diethyl methylmalonate and halogenated benzene to obtain 2-(2-fluoro-4-biphenyl)-2-diethyl methylmalonate; and 2-(2-fluoro-4-biphenyl)-2-diethyl methylmalonate is subjected to hydrolysis and decarboxylation, such that the target product 2-(2-fluoro-4-biphenyl) propionic acid is obtained. In the process route, starting materials are cheap and easy to obtain, operation is simple, aftertreatment is convenient, harsh reaction conditions such as high temperature and high pressure are avoided, and industrial production is facilitated.

This invention discloses a safe filling method for diborane mixed gas. This invention relates to the field of gas filling technology. It utilizes dual sensing units to collect the concentration of diborane decomposition byproducts in real time, and employs a closed-loop control algorithm to correlate and dynamically correct filling pressure, flow rate, and temperature. Combined with comprehensive safety management throughout the entire process, it addresses the risk of hidden decomposition. The advantages of this invention are: real-time capture of diborane decomposition byproduct concentration through dual sensing units; establishing and dynamically correcting the correlation between byproduct concentration and filling pressure, flow rate, and temperature using a closed-loop control algorithm; and comprehensive management including pre-treatment of gas cylinders before filling and harmless treatment of residual gas in pipelines after filling. This solves the core defects of existing technologies, such as the lack of a linkage mechanism between byproducts and filling parameters and the inability to identify hidden decomposition risks.