34 results about "Diborane" patented technology

The invention discloses a hyperbranched flame retardant as well as a preparation method and application thereof. The flame retardant is prepared by the following steps: dehydrating and pre-polymerizing a boron-containing component (such as tetrahydroxy diborane) and dihydric alcohol (such as 1, 3-propylene glycol), and condensing with trihydroxymethyl phosphine oxide. 4 parts of the flame retardant is added into epoxy resin, phosphorus-containing free radicals can be released in a gas phase for quenching and smoke suppression, a compact boron-containing expanded carbon layer is formed in a condensed phase, and synergistic flame retardance is achieved. The hyperbranched structure can be embedded into an epoxy network, synchronous reinforcement and toughening are achieved, the impact strength is improved by 123.5%, and the tensile strength is improved by 47.7%. The flame retardant has efficient flame retardance (the limit oxygen index is 33.9%, UL-94V-0 level), high transparency and excellent mechanical properties, and is suitable for epoxy resin composite materials in the fields of electronic packaging, aerospace and the like.

Systems and methods for delivering a process gas having a desired diborane concentration to a processing volume of a processing chamber are provided. In one embodiment, a system includes a borane concentration sensor. The borane concentration sensor includes a body and a plurality of windows. Here, each window of the plurality of windows is disposed at an opposite end of the body and the body collectively defines a cell volume with the plurality of windows. The borane concentration sensor further includes a radiation source disposed outside the unit volume and adjacent to a first window of the plurality of windows, and a radiation detector disposed outside the unit volume and adjacent to a second window of the plurality of windows.

The application discloses a kind of efficient adsorption separation method of impurities in borane preparation process, belong to gas separation technical field.The method includes: after ZIF-8 powder is vacuum dried, with 3-aminopropyl triethoxysilane in anhydrous toluene at 80 ℃ reflux reaction 12-24 hours, after washing, dry and obtain amido functionalization NH2-ZIF-8 composite adsorbent;It is filled in vertical fixed bed adsorption tower, and under-30 ℃-20 ℃, 0.3-0.8MPa, the crude ethyl borane gas containing boron trifluoride is imported and is adsorbed at low temperature;After adsorption saturation, regenerate by 80 ℃ heating and vacuum extraction.The grafting amount of amido on the surface of NH2-ZIF-8 obtained by the method is 2.0-3.5mmol / g, specific high selectivity adsorption of BF3 is realized, sufficient adsorption sites are provided, and the adsorbent has strong regeneration performance.

The present invention relates to a stable equivalent body of 2, 2 ''-bis (1-phosphinoethyl)-1, 1''-diferrocene, which is useful as a ligand in various catalytic reactions including aromatic asymmetric hydrogenation, but is difficult to synthesize and / or separate and purify, and a method for efficiently producing the same, and more particularly, to a stable equivalent body of 2, 2 ''-bis (1-phosphinoethyl)-1, 1''-diferrocene, which is useful as a ligand in various catalytic reactions including aromatic asymmetric hydrogenation. The present invention provides: a diphosphine-diborane complex represented by general formula (1) (BH3) 2); and a method for producing the diphosphine-diborane complex, the method comprising reacting a magnesium source and an oxidizing agent with a phosphine-borane complex in this order.

The invention relates to the technical field of semiconductor production, in particular to a high-growth-rate EPI production method which comprises the following steps: S1, removing oxide on the surface of a silicon substrate by adopting in-situ hydrogen annealing and repairing lattice defects; a gradient temperature rising strategy is adopted in the preheating stage, and slip lines caused by thermal stress are reduced; s2, in a chemical vapor deposition reaction cavity, adopting a double-gas-path injection system, wherein in a main gas path, mixed gas of high-flow SiH2Cl2 and H2 is used as a main silicon source; in the auxiliary gas path, trace SiH4 and HCl are used for inhibiting gas phase nucleation and adjusting the surface reaction activity; s3, adopting a double-area temperature control reaction cavity, wherein a central area is a high-temperature area, and rapid deposition of silicon atoms is promoted; the marginal area is a low-temperature area and inhibits marginal lattice distortion; the pressure of the reaction cavity is controlled to be 50-100 Torr; s4, in-situ doping and real-time monitoring: synchronously introducing phosphorane or diborane in the growth process, monitoring the doping concentration fluctuation in real time through a light emission spectrum, and feeding back and adjusting the gas proportion.

Methods, systems, and devices for plasma-doped trenches for memory are described. A method for forming a memory device with plasma-doped trenches may include forming a stack of materials having alternating layers of polysilicon and oxide materials. A trench may be etched in the stack and doped using a plasma doping process. In some examples, the trench may be doped by applying Boron fluoride, diborane, methane, or Boron and Carbon Hydride gases diluted with Hydrogen (H2) or Helium to the sidewalls and bottom surface of the trench, which may dope portions of the polysilicon material with Boron, Carbon, Fluorine, Helium, or Hydrogen.

A method of manufacturing a semiconductor memory device includes the following steps. A plurality of container-type capacitors are formed on the substrate. The sacrificial dielectric material is etched between the container-type capacitors to remove it, thereby forming a gap between the container-type capacitors and exposing an upper electrode of each container-type capacitor. And the upper electrode of each container type capacitor is subjected to diborane treatment in the gaps. And depositing a silicon seed layer on the surface of the upper electrode in the gap. A boron-doped polysilicon germanium layer is deposited on the silicon seed layer within the gap using silane, germane, and diborane. According to the manufacturing method, before boron-doped polycrystalline silicon germanium is deposited by using silane, germane and diborane traditionally, the steps of diborane treatment and silicon seed layer deposition are added, so that the situation that an unfilled gap is generated in a high-aspect-ratio gap between high-aspect-ratio container type capacitors is avoided.

The application discloses a diborane preparation synthetic device and a synthesis process thereof, which comprise a base, a vacuum pump and a preparation cylinder. The preparation cylinder is used for extracting air in the preparation cylinder by the vacuum pump before preparation. The bottom end of the preparation cylinder is communicated with a collecting box. The bottom of the collecting box is fixedly connected with the base. The top of the collecting box is fixedly connected with the vacuum pump. The outer surface of the collecting box is fixedly connected with a protection assembly. The top of the protection assembly is communicated with the preparation cylinder. The position, close to the protection assembly, of the preparation cylinder is fixedly connected with a sealing ring. The top of the preparation cylinder is fixedly connected with a quantitative assembly. The application relates to the technical field of diborane production. The diborane preparation synthetic device and the synthesis process thereof are used for filtering gas after purification in a purification cylinder, thereby improving the quality of the gas and avoiding the influence of too many impurities accumulated in the preparation cylinder on the service life of the device, so that the influence of water flow on the purification of the gas is avoided.

The invention discloses a safe diborane mixed gas filling method, and relates to the technical field of gas filling, diborane decomposition by-product concentration is collected in real time through double sensing units, filling pressure, flow velocity and temperature are correlated and dynamically corrected through a closed-loop regulation and control algorithm, full-process safety control is matched, hidden decomposition risks are solved, and the safety of diborane mixed gas is guaranteed. The device has the advantages that the concentration of diborane decomposition byproducts is captured in real time through the double sensing units, the concentration of the byproducts is associated with the filling pressure, the flow velocity and the temperature by means of a closed-loop regulation and control algorithm and dynamically corrected, and full-process management and control such as gas cylinder pretreatment before filling and pipeline residual gas recovery and harmless treatment after filling are matched; the core defects that in the prior art, a by-product and filling parameter linkage mechanism is lacked, and hidden decomposition risks cannot be recognized are overcome.

A process for producing diborane is provided which includes mixing boron halide with borohydride ionic liquid for providing a liquid reaction mixture, the liquid reaction mixture chemically reacting for producing gaseous diborane. There is also provided a related composition for producing diborane which includes boron halide and borohydride ionic liquid. Solvents are not needed in the mixture or in the composition to produce the diborane.

The invention discloses a light component removal tower for producing high-purity diborane, and relates to the technical field of light component removal towers, the light component removal tower comprises a main body structure, the main body structure comprises a tower body, a condenser is arranged at the top of an inner cavity of the tower body, an upper pressing plate is arranged at the bottom of the condenser, a lower pressing plate is arranged at the bottom of the upper pressing plate, and a redistributor is arranged at the bottom of the lower pressing plate; through the design of the self-cleaning assembly, the blocked filter plate can be automatically cleaned, manual intervention is not needed, the problem that a filter screen is blocked due to impurity deposition is effectively solved, stubborn impurities such as solid particles and polymers with high adhesive force on the surface of the filter plate can be effectively removed through the synergistic effect of a cleaning roller, a helical gear ring and a gear, and the service life of the filter plate is prolonged. The normal filtering function of the filtering plate is guaranteed, efficient gas-liquid mass transfer in the light component removal tower is maintained, meanwhile, the defect that shutdown is needed in traditional manual cleaning is overcome, and continuous production of the light component removal tower is achieved.

The invention discloses a preparation method of a high-ductility DLC (Diamond Like Carbon) film, which comprises the following steps: preparing an original DLC film in a vacuum environment; injecting diborane gas into the surface of the original DLC film, and maintaining for a preset time; and enabling diborane on the surface of the original DLC film to react at a preset temperature, so as to form a boron-doped DLC film layer on the surface of the original DLC film, thereby obtaining the high-ductility DLC film. According to the technical scheme, the ductility of the DLC film can be effectively improved under the condition that the performance of the DLC film is not damaged, and the cost is low.

The present application relates to diborane purification technical field, and disclose an electronic diborane purification device, including: base, the top of base is connected with reaction tube, the top of reaction tube is connected with top cover, the top of top cover is connected with pipeline, the pipeline is equipped with micro flow controller, the bottom of base is connected with cold trap equipment through connecting pipe, the outside of reaction tube is equipped with heating assembly. The present application can be automatically sealed when the reaction tube is broken during the reaction, so that the leaked diborane is isolated and sealed, avoiding the leakage of diborane to the outside to harm the staff, through the separation of driving heating tube and arc plate and reaction tube, the gap between multiple arc plates becomes larger, so that the diborane in the isolation sleeve can be extracted faster during subsequent processing, the speed of extracting diborane is improved, and the processing efficiency is improved.

The method comprises providing a partially manufactured semiconductor substrate 3D structure in a chamber, the 3D structure comprising a side wall and a plurality of openings in the side wall leading to a plurality of features having a plurality of internal regions through which the openings are fluidly accessible, and depositing a tungsten nucleation layer on the plurality of features using one or more deposition cycles, each deposition cycle comprising (a) administering diborane to the chamber two or more times without purging between diborane administrations, (b) purging the chamber after step (a), and (c) administering tungsten hexafluoride to the chamber one or more times after step (b), wherein purging is performed each time tungsten hexafluoride is administered.

The invention relates to the technical field of diborane safety production equipment, in particular to diborane safety production equipment with a protection function, which comprises an anti-explosion aeration tank body, a connecting mechanism is arranged in the anti-explosion aeration tank body, and a quick replacement mechanism is arranged in the anti-explosion aeration tank body. The connecting mechanism can automatically communicate a gas conveying pipeline in the anti-explosion aeration tank body with the sealing tank, the quick replacement mechanism comprises a replacement unit, the replacement unit is arranged in the anti-explosion aeration tank body and can replace the sealing tank full of gas, and the quick replacement mechanism further comprises a protection unit. According to the diborane safety production equipment with the protection function, the connecting mechanism, the replacement unit and the protection unit are arranged, so that the problem that the inflation efficiency is low due to many step operations when the equipment is used can be effectively solved.

The invention provides a gas chromatography device for detecting impurities in diborane, the gas chromatography device has the characteristics of high safety, high integration level, high sensitivity and simplicity and convenience in operation, a plasma emission detector is combined with a helium carrier gas system, so that the explosion risk caused by the use of traditional hydrogen is avoided, and the detection accuracy of impurities in diborane is improved. Meanwhile, by optimizing the chromatographic column combination and the multi-valve switching flow path design, efficient separation and all-component analysis of various impurities in diborane are achieved, the detection sensitivity smaller than 10 ppb can be achieved without multiple devices, the system cost, the maintenance difficulty and the operation complexity are remarkably reduced, and the detection efficiency is improved. The method is especially suitable for the precise quality control requirement of trace impurities of high-purity diborane in a semiconductor manufacturing process.

This invention belongs to the field of high-purity electronic chemicals, specifically relating to a method for preparing high-purity diborane. It addresses the problems in existing technologies regarding the difficulty in effectively removing impurities with boiling points close to diborane, and the impact of impurities such as metal ions and moisture in the raw materials on product purity. This invention utilizes a novel core-shell structured heterogeneous catalyst, MgO@ZrO2-Ir. 0 / Ir + This catalyst, functionalized with ionic liquid, exhibits high catalytic activity and hydrophobicity. It can selectively catalyze the hydrogenation conversion of light impurities under mild conditions. By employing mercapto-modified silica gel and a three-stage adsorption system, it deeply removes metal ions and trace amounts of moisture. Finally, through a combination of catalytic conversion and optimized dual-tower distillation, it effectively separates components with similar boiling points. This invention is applicable to high-end manufacturing fields such as semiconductors and photovoltaics.

The application provides a method for chemical vapor deposition of tungsten, which adopts a two-step nucleation method combined with a cyclic deposition process, that is, after forming a tungsten nitride layer for inhibiting the growth speed of tungsten, first, diborane is used to adsorb on the surface of the tungsten nitride layer to form high-activity nucleation sites, then, tungsten hexafluoride is introduced to react to form a first tungsten nucleation layer, then, the cyclic step of adsorption of silane and reaction with tungsten hexafluoride is repeated for multiple times, so as to form a second tungsten nucleation layer with a preset thickness by layer-by-layer accumulation, and finally, a tungsten main body layer is deposited, thereby effectively solving the problem that in the prior art, due to the discontinuous coverage or insufficient thickness of the nucleation layer at the bottom of a high-aspect-ratio contact hole, the hole is prematurely closed, and the internal part of the tungsten main body layer as a filling layer forms a hollow or a gap defect.

The invention discloses a preparation method of a microcrystalline silicon film, a solar cell and a preparation method thereof, and relates to the technical field of solar cells, and the preparation method comprises the steps: S1, carrying out the plasma processing of a monocrystalline silicon / polycrystalline silicon substrate on which an amorphous silicon passivation layer grows, and obtaining a primary sample; wherein the temperature is T1, and the reaction gas comprises at least one of phosphorane, diborane and trimethyl boron; s2, growing a seed crystal layer on the primary sample to obtain a secondary sample; s3, growing a microcrystalline silicon film on the secondary sample; the gap between the S2 and the S3 is not broken; in S2 and S3, the temperature is T2, and T2 is smaller than T1; the reaction gas comprises hydrogen, silane and doping gas, and the doping gas comprises at least one of phosphorane, diborane and trimethyl boron; the hydrogen-silicon ratio in the S3 is not higher than the hydrogen-silicon ratio in the S2. According to the preparation method, the field effect at the amorphous silicon / microcrystalline silicon interface is improved, the carrier transport characteristic of the cell is improved, and the cell efficiency is improved.

The invention discloses a boronizing treatment system for a first wall surface of a fusion device. The device comprises a special gas safety cabinet, a gas transmission pipeline, a gas shunting box, a safety interlocking system, a vacuum pumping unit and a tail gas processor, the special gas safety cabinet is connected with the gas shunting box through a gas transmission pipeline; the gas shunting box is connected with the vacuum chamber of the EAST fusion device through a gas transmission pipeline; the safety interlocking system is used for detecting the running states of the special gas safety cabinet, the gas shunting box, the gas monitor, the vacuum pumping unit and the tail gas processor; the vacuum pumping unit is connected with the EAST fusion device; and the tail gas treater is connected with an exhaust port of the mechanical dry pump of the vacuum pumping unit. The invention provides a simple, economical and effective boronizing system for treating the surface of the first wall in a fusion device, deuterated diborane is used as a working material, pollution caused by C and H impurities in a B2D6 sample in a boronizing experiment can be avoided, and the safety of a future experiment is ensured.

A process for producing diborane is provided which includes mixing boron halide with borohydride ionic liquid for providing a liquid reaction mixture, the liquid reaction mixture chemically reacting for producing gaseous diborane. There is also provided a related composition for producing diborane which includes boron halide and borohydride ionic liquid. Solvents are not needed in the mixture or in the composition to produce the diborane.

The invention relates to the technical field of diborane purification, and discloses an electronic diborane purification device which comprises a base, a reaction tube is connected to the upper portion of the base, a top cover is connected to the top of the reaction tube, a pipeline is connected to the top of the top cover, a micro-flow controller is arranged on the pipeline, and the micro-flow controller is connected to the top of the reaction tube. The bottom of the base is connected with cold trap equipment through a connecting pipe, and a heating assembly is arranged outside the reaction pipe. In the reaction process, when the reaction tube is broken, the reaction tube can be automatically sealed and isolated, so that leaked diborane is sealed and isolated by the isolation sleeve, diborane is prevented from leaking to the outside and hurting workers, the heating tube and the arc-shaped plates are driven to be separated from the reaction tube, gaps among the arc-shaped plates are enlarged, and the reaction tube is separated from the arc-shaped plates. According to the diborane pumping device, the distance sleeve is arranged, so that diborane can be pumped away more quickly when the diborane in the distance sleeve is pumped away for treatment subsequently, the speed of pumping away the diborane is increased, and the treatment efficiency is improved.

The invention discloses a deuterated diborane gas purity detection system and method in a boronizing system of a fusion device, and belongs to the technical field of nuclear fusion, and the system comprises a deuterated diborane gas cylinder, a flow control valve, a vacuum test chamber, a vacuum gauge tube, a quadrupole mass spectrometer, a vacuum pumping unit and a tail gas processor. According to the invention, the vacuum degree in the vacuum test chamber is pumped to 10 <-6 > Pa by using the vacuum pumping unit, and the vacuum test chamber is controlled in a stable state; then opening a flow control valve to introduce deuterated diborane into the vacuum test chamber, adjusting the opening degree of the valve, maintaining the vacuum degree in the vacuum test chamber within 10 <-3 > Pa, and finally measuring the molecular weight and concentration of the introduced gas by using a quadrupole mass spectrometer, so as to distinguish the purity of the deuterated diborane and the purity of the hydrodiborane. According to the method, the purity of the deuterated diborane is determined by detecting the difference between the molecular weights of the hydrogen-substituted diborane and the deuterated diborane through the quadrupole mass spectrometer, and a technical support is provided for a fusion device to carry out pure deuterated diborane boronizing wall treatment.

The invention belongs to the field of high-purity electronic chemicals, and particularly relates to a preparation method of high-purity diborane. The problems that impurities with the boiling point close to that of diborane are difficult to effectively remove in the prior art, and metal ions, water and other impurities in raw materials affect the product purity are solved. A novel core-shell structure heterogeneous catalyst MgO (at) ZrO2-Ir0 / Ir < + > is adopted, the catalyst has high catalytic activity and hydrophobicity after being functionalized by ionic liquid, light impurities can be converted through selective catalytic hydrogenation under mild conditions, and metal ions and trace moisture are deeply removed by adopting sulfydryl modified silica gel and a three-stage combined adsorption system; finally, catalytic conversion and optimized double-tower rectification are combined, so that components with approximate boiling points are effectively separated; the method is suitable for high-end manufacturing fields of semiconductors, photovoltaics and the like.

Methods for forming a silicon boron nitride layer are provided. The method includes positioning a substrate on a susceptor in a process region within a process chamber; heating a susceptor holding the substrate; and introducing a first gas stream of the first process gas and a second gas stream of the second process gas into the process region. The first gas stream of the first process gas contains silane, ammonia, helium, nitrogen, argon, and hydrogen. A second gas stream of the second process gas contains diborane and hydrogen. The method further includes forming a plasma concurrently with the first flow of the first process gas and the second flow of the second process gas reaching the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate.

The invention provides a method for optimizing germanium-silicon epitaxial growth and a semiconductor device. The method comprises the following steps: forming shallow trench isolation, a gate structure and a source and drain region on a substrate, and forming trenches including sigma trenches and half sigma trenches in the source and drain region; a germanium-silicon epitaxial layer is selectively grown in the trench, first embedded germanium-silicon is formed in the sigma trench, an inclined plane layer of the germanium-silicon epitaxial layer inclining towards the shallow trench isolation is formed in the half sigma trench, and a hole with a wide upper part and a narrow lower part is formed at the same time; diborane gas is adopted to activate the surface of the germanium-silicon epitaxial layer in the groove to form an activated surface, then a boron-free silicon layer is formed on the activated surface, the boron-free silicon layer is etched, and only the boron-free silicon layer on the lower portion of the slope layer is reserved to serve as primary filling of the cavity; repeatedly carrying out hole filling for multiple times; and forming the cap layer. According to the method, the cavity in the half sigma trench can be filled, so that the half sigma trench is filled more fully, the germanium-silicon deficiency is improved, and the reliability of the device is improved.

The application discloses a controllable synthesis of Pt single atoms and a preparation method of the Pt single atoms and RuO2-IrO2 composite as an anode electrocatalyst and an electrode thereof. The steps are as follows: H2PtCl6 and tetra-methylammonium ethylborane are mixed and ground in a certain proportion, the mixture is then subjected to a closed heating reaction in a reaction kettle, and then is transferred to a vacuum reaction kettle to be subjected to calcination treatment again, so that PtNCB is obtained. A coating solution containing the prepared PtNCB and RuCl3 and IrCl3 precursor solutions is prepared, is uniformly coated on a substrate, and then the generated electrode is dried, and the electrode containing the coating is sintered in a heating furnace, so that a RuO2-IrO2-PtNCB electrode is finally obtained. By skillfully controlling the amount of the organic diboron compound tetra-methylammonium ethylborane, PtNCB precisely protected by Pt single atoms is successfully synthesized, and RuO2-IrO2 is co-catalyzed as an anode electrocatalyst. The Pt single atom catalyst of the application not only has excellent sintering resistance, but also has excellent electrocatalytic activity.

The invention belongs to the technical field of material preparation, and particularly relates to a preparation method and application of doped nano silicon. According to the method, argon is used for flushing and leak detection of a pyrolysis system, working gas is introduced into a plasma reactor to form stable high-temperature plasma, and cooling airflow is established; then silicon source gas and doping element gas (hydrogen phosphide, diborane, methylgermane and arsenic hydride) are mixed in proportion, and the mixture is injected into a plasma thermal field through a feeding probe to be decomposed; after the mixed gas is decomposed, the mixed gas respectively passes through a high-temperature cooling area and a low-temperature cooling area to generate doped nano silicon; the doped nano silicon enters the collecting chamber under the driving of the airflow and is adhered to the surface of the filter; and finally, the powder falls into a powder collecting tank through repeated back flushing of nitrogen, and doped nano silicon is obtained. Through an in-situ doping technology, atomic-scale uniform distribution of doping elements is realized. When being used as a lithium ion battery negative electrode material, the material has the characteristics of low expansion, high specific capacity, high coulombic efficiency and the like.

The invention aims to provide a continuous reaction and raw material recycling system for electronic-grade diborane. The system comprises a solid-liquid mixer, a liquid filter, a gas filter, a pipeline mixer, a U-shaped tubular reactor and a gas-liquid separator, segmented control is achieved through the U-shaped tubular reactors connected in series, fluid turbulence is enhanced, backmixing is reduced, and the contact efficiency of reactants is improved. Meanwhile, efficient separation and collection are realized based on the boiling point difference of the materials, a closed-loop recovery system is constructed, and the cyclic utilization rate of the raw materials is increased, so that a high-yield and high-quality diborane product is obtained.

A method includes providing a 3D structure of a partially fabricated semiconductor substrate to a chamber, the 3D structure including a plurality of sidewalls, a plurality of openings in the sidewalls resulting in a plurality of features having a plurality of interior regions fluidly accessible through the openings; and depositing a tungsten nucleation layer in the plurality of features using one or more deposition cycles, each deposition cycle comprising steps (a)-(c): (a) dosing diborane to the chamber twice or more without sweeping between the dosing of diborane; (b) after step (a), cleaning the chamber; and (c) after step (b), dosing tungsten hexafluoride to the chamber one or more times, where cleaning is performed after each dosing of tungsten hexafluoride.