100results about How to "Prevent implantation" patented technology

A CVD apparatus produces plasma to generate radicals and uses the radicals, silane, and the like so as to deposit films on substrates in a vacuum vessel 12. The vacuum vessel has a partitioning wall section 14 for separating the inside thereof into a plasma-generating space 15 and a film deposition process space 16. The partitioning wall section has a plurality of through-holes 25 and diffusion holes 26. An interior space 24 receives the silane or the like fed into the film deposition process space through diffusion holes 16. The radicals produced in the plasma-generating space are fed into the plasma-generating space through the through-holes. The through-holes satisfy the condition of uL / D>1, where u represents the gas flow velocity in the through-holes, L represents the effective length of the through-holes, and D represents the inter-diffusion coefficient.

An external defibrillator having a battery; a capacitor electrically communicable with the battery; at least two electrodes electrically communicable with the capacitor and with the skin of a patient; a controller configured to charge the capacitor from the battery and to discharge the capacitor through the electrodes; and a support supporting the battery, capacitor, electrodes and controller in a deployment configuration, the defibrillator having a maximum weight per unit area in the deployment configuration of 0.1 lb / in2 and / or a maximum thickness of 1 inch. The support may be a waterproof housing.

A novel catheter-based system that ligates the left atrial appendage (LAA) on the outside of the heart, preferably using a combination of catheters and / or instruments, e.g., a guide catheter inserted into the interior of the left atrial appendage that may assist in locating the left atrial appendage and / or assist in the optimal placement of a ligature or constricting element on the outside of the appendage, and a ligating catheter and / or instrument outside the heart in the pericardial space to set the ligature or constricting element at the neck of the left atrial appendage.

A portable dialysis access monitor device, comprising: an electronic monitor device and a server. The electronic monitor device includes a first microprocessor, an acoustic detector, a touch screen, a first storage device, a diagnostic programming module, an alarm device and a power supply device. The first microprocessor collects acoustic frequency signals, sound signals and thrill signals detected from a dialytic fistula. If signal difference is greater than a predetermined threshold value, the electronic monitor device provides a warning by the alarm device. The server includes a second microprocessor, a second storage device and a mobile internet. The server receives and analyzes the acoustic frequency signals, the sound signals and the thrill signals detected from the dialytic fistula by utilizing the second microprocessor to get an analyzed result. The server transmits the analyzed result to the electronic monitor device by utilizing the mobile internet.

A novel catheter-based system which ligates the left atrial appendage (LAA) on the outside of the heart, preferably using a combination of catheters and / or instruments, e.g., a guide catheter positioned inside the left atrial appendage which may assist in locating the left atrial appendage and / or assist in the optimal placement of a ligature on the outside of the appendage, and a ligating catheter and / or instrument outside the heart in the pericardial space to set a ligating element at the neck of the left atrial appendage.

A novel catheter-based system that ligates the left atrial appendage (LAA) on the outside of the heart, preferably using a combination of catheters and / or instruments, e.g., a guide catheter inserted into the interior of the left atrial appendage that may assist in locating the left atrial appendage and / or assist in the optimal placement of a ligature or constricting element on the outside of the appendage, and a ligating catheter and / or instrument outside the heart in the pericardial space to set the ligature or constricting element at the neck of the left atrial appendage.

Stress in a silicon nitride contact etch stop layer on a CMOS structure having NMOS and PMOS devices is selectively relieved by selective implantation of oxygen-containing or carbon-containing ions resulting in there being no tensile stress in areas of the layer above the PMOS devices and no compressive stress in areas of the layer above the NMOS devices.

An ESD protection device including a transistor structure with resistive regions located within active areas thereof. The transistor structure is formed of one or more MOS transistors, preferably N-type MOS transistors. The drain regions of the transistors are modified to reduce the conductivity of those resistive regions by preventing high carrier concentration implants in one or more sections of the drain regions. This is achieved by modifying an N LDD mask and the steps related thereto, as well as a silicide exclusion mask and the steps related thereto. The modifications result in the omission of N LDD dopant from the area immediately adjacent to the underlying channel. In addition, portions of a spacer oxide remain over the drain region to be formed. Subsequent implant and siliciding steps are effectively blocked by the spacer oxide that remains, leaving a low-density drain (LDD) charge carrier concentration in those regions, except where omitted. The resistivity of those resistive LDD regions is greater than the resistivity of the adjacent portions of the drain region. The result is more uniform turn-on of ESD transistor fingers in a protection device set without the need to add valuable layout space and without increased processing steps.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a heavily doped region of a first conductivity and has a lightly doped region of the first conductivity. The semiconductor substrate a plurality of trenches etched into an active region of the substrate forming a plurality of mesas. A preselected area in the active region is oxidized and then etched using a dry process oxide etch to remove the oxide in the bottoms of the trenches. A protective shield is formed over a region at a border between the active region and the termination region. The protective shield is partially removed from over the preselected area. Dopants are implanted at an angle into mesas in the preselected area. The plurality of trenches are with an insulating material, the top surface of the structure is planarized and a superjunction device is formed on the structure.

Methods and apparatuses for treatment of various joint conditions include a device inserted into a joint space. During delivery, the profile of the device is constrained in at least one dimension to minimize invasive impact on tissue and / or bone. The device may be restrained for implantation by a thread or a rigid elongate member. After insertion, the device may expand at the implantation site.

Methods of inducing a cancer-specific immune response are disclosed through administration of an immune stimulant in the context of tumor cell death induction. Currently used clinical methods of inducing localized tumor cell death are modified to optimize immune response induction. One embodiment of the invention discloses pharmaceutical compositions and kits for modifying the palliative procedure of transarterial chemoembolization so as to promote uptake and presentation of tumor antigens in an immunostimulatory microenvironment, thereby allowing for induction of T cell, B cell and NK responses, which control not only local, but also systemic tumor growth and metastasis.

The invention discloses a piezoresistive-material-based resistivity imaging flexible pressure detection system, which comprises a pressure detection pad (1), a temperature sensor (2) buried in the pressure detection pad (1), injection electrodes (3) connected to the edge of the pressure detection pad (1), a plurality of uniformly distributed receiving electrodes (4) connected to the periphery of the pressure detection pad (1), wires (5) connected to the receiving electrodes (4) and the temperature sensor (2) and a signal acquisition circuit (10) connected with the wires (5), wherein the pressure detection pad (1) is made from a piezoresistive material; and when certain pressure is applied to the pressure detection pad, the resistivity of the material in the pressure detection pad can be changed. The injection electrodes connected to the pressure detection pad are used for injecting current into the pressure detection pad, the receiving electrodes arranged around the detection pad are used for receiving detected voltage signals, and an electrical impedance tomography principle is used for calculating resistivity distribution in the pressure detection pad to further invert the distribution of the pressure born by the pressure detection pad.

A novel catheter-based system that ligates the left atrial appendage (LAA) on the outside of the heart, preferably using a combination of catheters and / or instruments, e.g., a guide catheter inserted into the interior of the left atrial appendage that may assist in locating the left atrial appendage and / or assist in the optimal placement of a ligature or constricting element on the outside of the appendage, and a ligating catheter and / or instrument outside the heart in the pericardial space to set the ligature or constricting element at the neck of the left atrial appendage.

Disclosed are embodiments a technique for inducing strain into the polysilicon gate of a non-planar FET (e.g., a finFET or trigate FET) in order to impart a similar strain on the FET channel region, while simultaneously protecting the source / drain regions of the semiconductor fin. Specifically, a protective cap layer is formed above the source / drain regions of the fin in order to protect those regions during a subsequent amporphization ion implantation process. The fin is further protected, during this implantation process, because the ion beam is directed towards the gate in a plane that is parallel to the fin and tilted from the vertical axis. Thus, amorphization of the fin and damage to the fin are limited. Following the implantation process and the formation of a straining layer, a recrystallization anneal is performed so that the strain of the straining layer is ‘memorized’ in the polysilicon gate.

Cell compositions consisting essentially of mammalian hematopoietic CXCR4+ stem and progenitor capable to migrate in response to stromal-derived factor 1 (SDF-1) and / or capable to adhere to stromal cells in response to an adhesion-inducing agent, are provided for clinical transplantation. Hematopoietic CXCR4− / low stem and progenitor cells can be converted into CXCR4+ cells by stimulation with a suitable agent. The composition consists preferably of human CD38− / low CXCR44 cells.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a heavily doped region of a first conductivity and has a lightly doped region of the first conductivity. The semiconductor substrate a plurality of trenches etched into an active region of the substrate forming a plurality of mesas. A preselected area in the active region is oxidized and then etched using a dry process oxide etch to remove the oxide in the bottoms of the trenches. A protective shield is formed over a region at a border between the active region and the termination region. The protective shield is partially removed from over the preselected area. Dopants are implanted at an angle into mesas in the preselected area. The plurality of trenches are with an insulating material, the top surface of the structure is planarized and a superjunction device is formed on the structure.

The invention relates to a method of producing a film intended for applications in electronics, optics or optronics starting from an initial wafer, which includes a step of implanting atomic species through one of the faces of the wafer. This method includes forming a step of defined height around the periphery of the wafer, with the step having a mean thickness that is less than that of the wafer; and selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone. The implantation of atomic species into the step can be prevented by forming a protective layer at least over the step or by masking the step. The invention also relates to a wafer obtainable by the method.

Plural trench isolation films (4) are provided with portions of an SOI layer (3) interposed therebetween in a surface of the SOI layer (3) in a resistor region (RR) where a spiral inductor (SI) is to be provided. Resistive element (30) are formed on the trench isolation films (4), respectively. Each of the trench isolation films (4) includes a central portion which passes through the SOI layer (3) and reaches a buried oxide film (2) to include a full-trench isolation structure, and opposite side portions each of which passes through only a portion of the SOI layer (3) and is located on the SOI layer 3 to include a partial-trench isolation structure. Thus, each of the trench isolation films (4) includes a hybrid-trench isolation structure.

The embodiment of the invention discloses a chip legality authentication method and device. The chip legality authentication method comprises the steps that the terminal acquires a random number, performs preliminary encryption on the random number to obtain a first ciphertext, and sends the random number and the first ciphertext to an authenticated chip; the authenticated chip performs secondary encryption on the random number to obtain a second ciphertext, judges whether the second ciphertext is the same as the first ciphertext or not, encrypts the random number for the third time to obtain a third ciphertext if the second ciphertext is the same as the first ciphertext, and sends the third ciphertext to the terminal; the terminal encrypts the random number for the fourth time to obtain a fourth ciphertext; the terminal judges whether the fourth ciphertext is the same as the third ciphertext or not, wherein if the fourth ciphertext is the same as the third ciphertext, the authenticated chip is a legal chip. According to the chip legality authentication method, due to such a bidirectional authentication mechanism, an illegal authentication request can be effectively avoided, and the chip can only be authenticated by a legal chip authenticator, so that the safety of chip authentication is guaranteed.

The invention comprises: an energy transmission unit, a forward data transmission unit and a feedback information transmission unit. The energy transmission unit is used to generate the energy of whole system, and to transmit the energy to human body through a coil so as to provide the DC offset voltage for the stimulator and the active circuit in human body; the forward data transmission unit is used to transmit a part of digital image information from outside of human body to the inside of human body; the feedback information transmission unit is used to transmit intra-body information to the monitor at outside of the human body for supervision. The energy transmission unit provides energy sources for the other two units above.

A method for manufacturing a solid-state image capturing apparatus including a pixel array constituted of a plurality of pixels, is provided, where each of the plurality of pixels includes a photoelectric conversion section, the method comprising the steps of: forming an impurity diffusion area in a surface area of a semiconductor substrate; and forming a plurality of different impurity diffusion areas in the surface area of the semiconductor substrate, other than the impurity diffusion area constituting the photoelectric conversion section.

In a method for fabricating a semiconductor memory device and a semiconductor memory device fabricated by the method, the method includes forming a multi-layered dielectric structure including a first dielectric layer with an ion implantation layer and a second dielectric layer without an ion implantation layer, over a semiconductor substrate; forming nanocrystals in the first and second dielectric layers by diffusing ions of the ion implantation layer by thermally treating the multi-layered dielectric structure; and forming a gate electrode on the multi-layered dielectric structure.

The invention relates to a webpage tamper-resistant method based on file-driven watermark comparison. The webpage tamper-resistant method comprises the following steps: 1, when a driving program installed on a server side monitors that a webpage is accessed, a kernel layer captures an IRP (I / O Request Package) request; 2, judging whether the conditions that a process of initiating the IRP request is an appointed Web container process, the IRP request is for a purpose of reading a file and the file read by the IRP request is a file needing to be protected by a user are simultaneously met or not, starting watermark comparison when the three conditions are met and turning to the next step, and normally releasing as long as one condition is not met; 3, calculating watermarks of the webpage file, comparing the calculated water marks with backup watermarks in a watermark library, if the watermark comparison result is consistent, normally releasing the IRP request, or else sending a request of recovering a tampered webpage file to a user layer and refusing the IRP request. The webpage tamper-resistant method can be used for effectively protecting a Web website from being tampered and improving the watermark comparison efficiency.

The invention discloses an arrowhead cultivation method which comprises the following steps of waterlogged compost, wherein swamp mahogany, tea seed residue and peanut shells are ploughed under a plough layer of a breeding land as base fertilizers; seedling, wherein arrowheads are cultivated in the breeding land according to the planting distance of 5 centimeters * 5 centimeters at the early to middle of the March; transplanting, wherein the arrowheads are transplanted to a field from the breeding land at the early to middle of the June; field managing, wherein topdressing is carried out once on the arrowheads after the arrowheads are transplanted for 7-10 days, then topdressing is carried out once every half a month until the early to middle of the August, the final topdressing is carried out at the middle to late of the August, 50-60 kilograms of plant ash and 500-800 kilograms of farmyard manure are applied per mu; field water draining, wherein the water drainage is carried out after the middle of the November, and fruits can be dug out between the late of the November to the early to middle of the December. In the seedling land, the swamp mahogany, the tea seed residue and the peanut shells are ploughed as the base fertilizers and good in fertility, the swamp mahogany and the tea seed residue have a disinfection effect and can eliminate bacteria in the seedling land, growth of weak seedlings in the nursery stage can be guaranteed, the weak seedlings with diseases are prevented from being planted in the field, and causative agents are eliminated substantially.

A body contact layer 18 is formed on the side of a recessed structure 17 as well as in the bottom of the recessed structure 17, so that a contact area between the body contact layer 18 and a well layer 12 is increased and the amount of dopant implanted to the body contact layer 18 is suppressed.

An invention is provided whereby methods and compositions having angiostatic activity are utilized to treat angioproliferative disorders, to prevent conception, and to treat a wide variety of pathologies in which it is desirable to limit the production of new vasculature. Specifically, compositions containing proteinases derived from the pathogen Porphyromonas gingivalis capable of treating cancer through disruption of cell-cell and cell-matrix adhesion bonds associated with malignant tumor proliferation are disclosed.