700 results about "Resistive element" patented technology

An antenna device includes an antenna array in which a plurality of antennas each including a negative differential resistance element and a resonance circuit are arranged, a voltage bias circuit which applies a voltage to the antenna array, a first shunt element which is connected between the antenna array and the voltage bias circuit in parallel relation to each of the negative differential resistance element and the voltage bias circuit, and in which a first resistor and a first capacitor of the first shunt element are connected in series, and a second shunt element which is connected between the first shunt element and the voltage bias circuit in parallel relation to each of the negative differential resistance element and the voltage bias circuit, and in which a second resistor and a second capacitor of the second shunt element are connected in series.

Methods and apparatus for filtering a signal using a current mode filter circuit that enables source degradation. An example filter circuit generally includes an input node; an output node; a power supply node; a first transistor including a drain coupled with the input node; a second transistor including a drain coupled with the output node and including a gate coupled with a gate of the first transistor; a capacitive element coupled between a drain of the first transistor and the power supply node; a first resistive element coupled between the drain electrode and the gate electrode of the first transistor; a first source degeneration element coupled between a source of the first transistor and the power supply node; and a second source degeneration element coupled between a source of the second transistor and the power supply node.

The invention provides a buried resistor circuit board and a preparation method thereof. According to the resistance element, one resistance material is arranged on the dielectric layer to form the first resistance layer, and then the other resistance material is arranged on the first resistance layer to form the second resistance layer, so that the binding force of the resistance layers and the dielectric layer can be enhanced, and the surface flatness of the resistance element can be improved. The resistive layer of the resistive element is protected by using the protective film, so that the shape and the length of the resistive layer are prevented from being influenced by subsequent processes. According to the preparation method, the whole process is a dry process, a differential etching process is omitted, an alkaline etching solution does not need to be used, and the preparation method is environmentally friendly.

The utility model provides a leveled resistor element, which comprises a substrate, a resistor layer and an electrode layer, solves the problems of impedance increase and abnormal product characteristics caused by improper joint of an interface between the electrode layer and the resistor layer, and comprises the following steps of: after the electrode layer process is finished, forming the resistor layer on the substrate; and laser or grinding is utilized to eliminate the height difference of the interface and process the discontinuous structure of the outline of the electrode layer.

A tamper for making paraffin blocks for histology may include a pliable tamper head and a handle. The handle may be permanently or removably attached to the tamper by using screws, magnets, or the like. The tamper may be made from a pliable material, such as a silicone rubber, with improved thermal transfer and high latent heat. In use, the tamper may be warmed in advance to a working temperature by placing the tamper on a hot plate of the embedding station or on a dedicated smaller hot plate. Alternatively, the tamper may be heated with an electric resistive element, a thermoelectric device, or an electric induction coil.

A strain sensing structure and a fabricating method of the same are provided. The strain sensing structure includes a flexible substrate, strain resistor members, a first wiring layer and a second wiring layer. The flexible substrate has through holes which are distributed separately. The strain resistor members are respectively disposed in the through holes. The first wiring layer is stacked on an upper side of the flexible substrate and includes first wirings, where the first wirings are separate from each other. The second wiring layer is stacked on a lower side of the flexible substrate and includes second wirings, where the second wirings are separate from each other. Each strain resistor member is electrically connected to one of the first wirings and one of the second wirings, so that the strain resistor members form a series circuit through the first wirings and the second wirings.

A frame terminal 8 is bent so that its cross-sectional shape is an S-shape, and such that separation distances L1, L2 and L3 in a horizontal direction between an uppermost portion and a lowermost portion, in the vertical direction, of an end portion side face 21a of a resistance element 8 built into a mold divider 1, and a part substantially midway between an uppermost point and a lowermost point thereof, and the parts of the surface of the frame terminal 6 that correspond to these parts in the horizontal direction satisfy the relation L1>L2≥L3. As a result, in the mold divider 1, a space which is to be filled with a joining material and which has a non-uniform separation distance is formed between the frame terminal 6 and the end portion side face 21a, thereby making it possible to ensure the bonding strength between the resistance element 8 and the frame terminal 6.

The invention relates to sensing compositional information about material by measuring thermal properties of the material. In one arrangement there is provided a needle probe for sensing compositional information. The probe comprises a needle having a tip region. A resistive element is attached to the needle at the tip region. A measurement system is configured to: 1) drive an electrical current through the resistive element to apply heating to the resistive element, and 2) measure an electrical response of the resistive element to the heating. A processing unit analyses the measured electrical response of the resistive element to the heating to determine compositional information about material in contact with the tip region.

A cooking appliance assembly includes a cooking appliance including a heat source and a port including a socket; at least one cooking accessory including an accessory sensor, a plug, and a resistive element, the plug being removably received within the socket; a variable resistance module provided within the cooking appliance and operably connected with the port; and a controller communicatively coupled with the cooking appliance and the at least one cooking accessory, the controller configured to perform an operation. The operation includes determining an accessory type of the cooking accessory engaged with the port of the cooking appliance; adjusting, via the variable resistance module, a reference resistance at the variable resistance module based on the determined accessory type; and selecting a corresponding temperature table or equation based on the determined type of the cooking accessory.

The present invention relates to a resistor unit (1, 1', 1''), comprising: at least one electrical resistor (10), at least one fluid-carrying cooling unit (30) on and / or in which at least part of the at least one electrical resistor (10) is arranged, at least one detection unit (3, 4, 5, 6, 7, 71, 72) and at least one evaluation device (40) that can be operatively connected to the at least one detection unit (3, 4, 5, 6, 7, 71, 72), the at least one detection unit (3, 4, 5, 6, 7, 71, 72) being configured to measure a variable that represents the temperature (TR) of the at least one electrical resistor (10) per se or in combination with a further detection unit (3, 4, 5, 6, 7, 71, 72) and that relates to an electrical property of the at least one electrical resistor (10) and / or to a property of a fluid flowing through the fluid-carrying cooling unit (30). The present invention additionally relates to a brake system and to a vehicle having such a resistor unit and to a method for estimating a temperature of the fluid-cooled electrical resistor.

An amplifier circuit includes first and second amplifiers, first and second input-side coils, first and second output-side coils, a resistance element, a first switch including first to fourth terminals, and a second switch including fifth to seventh terminals. The first input-side coil is connected between the first amplifier and the first terminal, the second input-side coil is connected between the second amplifier and the third terminal, the first output-side coil is connected between a signal output terminal and the second terminal, the second output-side coil is connected between the fifth terminal and the fourth terminal, and the resistance element is connected between the sixth terminal and the ground.

The invention belongs to the technical field of electromagnetic microwaves, and particularly discloses an ultra-wideband wave-absorbing material based on a three-layer metasurface and application of the ultra-wideband wave-absorbing material based on the three-layer metasurface. Each wave-absorbing resonance unit comprises a first resistor loading metasurface layer, a first resistor loading metasurface substrate, a first resistor element, a first resistor loading metasurface supporting dielectric layer, a second resistor loading metasurface substrate, a second resistor loading metasurface layer and a second resistor element which are sequentially arranged from top to bottom; the device comprises a first resistor loading metasurface substrate, a second resistor loading metasurface supporting dielectric layer, a third resistor loading metasurface layer, a third resistor loading metasurface substrate, a third resistor element, a third resistor loading metasurface supporting dielectric layer and a pure metal backboard. According to the ultra-wideband wave-absorbing material based on the three-layer metasurface and the application of the ultra-wideband wave-absorbing material, 90% of ultra-wideband wave absorption can be achieved under a small-size structure, and the ultra-wideband wave-absorbing material has extremely high strategic value in the fields of electromagnetic stealth and the like.

Methods and apparatus for amplifying a signal via an amplification circuit are described. An example amplification circuit generally includes an amplifier including an inverting input configured to receive a signal for wireless transmission. The amplification circuit also includes an impedance coupled between the inverting input and an output of the amplifier. The amplification circuit further includes a resistive element including (i) a first terminal coupled to the inverting input and (ii) a second terminal coupled to a reference potential node for the amplification circuit.

The utility model relates to an air duct structure of a forced air cooling brake resistor. The air duct structure is arranged on a resistor box body, the resistor box body comprises a box body air duct and a resistor element arranged in the box body air duct, and the air duct structure comprises a conical air guide device, a fan, an air inlet mesh enclosure and an air outlet shell arranged at the outlet end of the box body air duct which are sequentially connected with the inlet end of the box body air duct; the air inlet mesh enclosure is a cuboid mesh enclosure, a fan receding hole is formed in one side of the air inlet mesh enclosure, and fan blades of the fan are rotationally arranged at the fan receding hole. Compared with the prior art, the air duct structure enables air flow to be evenly distributed in the air duct of the box body, prevents the air flow from generating a blind area in the air duct and causing local over-temperature of a brake resistor, can effectively reduce the adverse effect of walking wind generated when a train travels on heat dissipation of the resistor, and improves heat dissipation efficiency.

An ESD protection circuit in an interface circuit has a first diode coupled between a power source of an integrated circuit device and an input / output pad of the integrated circuit device, a second diode coupled between a first terminal of a first resistive element and the input / output pad, with a second terminal of the first resistive element being coupled to the power source, a second resistive element that couples the second diode to the first diode and to the input / output pad; a first clamping circuit coupled between the power source and a ground reference of the integrated circuit device, and a second clamping circuit coupled between the first terminal of the first resistive element and the ground reference. The power source supplies a driver circuit coupled to the input / output pad.

The utility model relates to the technical field of NTC (Negative Temperature Coefficient) resistor element processing, in particular to an NTC resistor element lead branching assembly, which comprises a supporting seat, a centering clamping mechanism is arranged on the surface of the supporting seat, the centering clamping mechanism consists of a servo motor, a rotating arm, a pull rod and two groups of clamping plates, the two clamping plates are slidably connected to the surface of the supporting base. The surface of the clamping plate is connected with a branching mechanism, and the branching mechanism is used for branching NTC resistor element leads; the surface of the supporting seat is connected with a pushing mechanism; and the pushing mechanism is used for pushing the wire separating mechanism to move to realize wire separating work. According to the utility model, the automation degree is improved, manual auxiliary operation is not needed in the branching process, the labor intensity is reduced, and the working efficiency is improved; and the whole branching process is automatically completed by a machine, and manual operation does not exist in the process, so that the branching positions are relatively uniform.

The present description relates to a switching circuit (205) comprising at least one first bipolar transistor configured to be coupled to at least one electrical component (106, 109, 506, 507) to be switched, the bipolar transistor (60) having a first conduction electrode coupled to a reference electrical potential through at least one resistive (61) or inductive component or a second transistor (71).

The invention relates to a circuit unit for controlling load currents of an electrical load, comprising a circuit logic, at least n switch elements with n≥2, resistance elements with m≥1, wherein the resistance elements can be bridged by means of the switch elements, wherein the circuit logic is designed such that it increases the load current in steps to a final value by means of an activation sequence of the switch elements, and a method for controlling load currents of an electrical load.

The reliability of an electronic device provided with a conductor pattern covered by a dielectric film is improved. An electronic device (100) is provided with: a substrate (110) including regions (111, 112); a resistance element (40) formed in the region (112); a dielectric film (21) covering the region (111) and the resistance element (40); a conductor pattern (31) formed in the region (111) via the dielectric film (21); an adhesion film (50) that does not cover the region (112) but covers the upper surface (31a) and the side surfaces (31b) of the conductor pattern (31); and a dielectric film (22) that covers the upper surface (31a) and the side surfaces (31b) of the conductor pattern (31) via an adhesion film (50).

The present description relates to a switching step-down converter (3). A first terminal (200) receives a regulated voltage and is coupled to a reference potential (GND) by a resistive element (R). A main loop (208) regulates the regulated voltage from a comparison of a first voltage (Vfb) on the first terminal to a first threshold. A circuit (C) activates a current source (CS) providing a first current (I1) to the first terminal (200) when the first voltage is lower than a second threshold. A current loop (A2) regulates the first voltage to the value of a third threshold by drawing a second current (I2) on the first terminal (200) if the first voltage is higher than the third threshold.

The utility model discloses a corner cut sleeve shell PTC heating device, which belongs to the technical field of heating element fixation, and comprises a positive electrode plate, a negative electrode plate, a PTC thermistor plate, a heat transfer base and a corner cut sleeve shell, the PTC thermistor plate is used as a heating element, is embedded into the corner cut sleeve shell and is sleeved on the heat transfer base, and seamless tight fixation is realized. And the inner wall of the chamfered sleeve shell is matched with the outer wall of the PTC thermistor piece, so that electric contact is ensured. The device further comprises insulation paste to achieve insulation. The outer edge of the lower end of the corner cut sleeve shell is provided with a corner cut, so that heat transfer bases in different shapes can be conveniently sleeved and adapted. According to the device, the PTC thermistor element is pressed on two sides, the thickness is reduced, the heat efficiency is improved, and the heat resistance is reduced.

The present disclosure is drawn to, among other things, a configuration bit including at least four resistive elements and a voltage amplifier. At least two first resistive elements may be electrically connected in series via a first electrode and at least two second resistive elements may be electrically connected in series via a second electrode. The at least two first resistive elements may be electrically connected in parallel to the at least two second resistive elements via a third electrode and a fourth electrode. The first electrode and the second electrode may be electrically connected to a voltage supply. The third electrode and the fourth electrode may be electrically connected to an input of the voltage amplifier.

To improve uniformity of a plating film-thickness formed on a substrate.A plating module 400 includes a plating tank 410 for housing a plating solution, a substrate holder 440 for holding a substrate Wf, an anode 430 housed within the plating tank 410, an anode mask 460 arranged between the substrate Wf held by the substrate holder 440 and the anode 430 and provided with an opening 466 in a center, and an ionically resistive element 450 arranged at an interval from the anode mask 460 between the substrate Wf held by the substrate holder 440 and the anode mask 460 and provided with a plurality of holes.

This nitride semiconductor device (1) comprises a power FET (11), an ESD protection FET (12), a diode (13), and a resistor element (14). A gate structure (50G) of the power FET (11) includes a p-type semiconductor layer (52G) and a gate electrode (54G) that is Schottky-connected to the p-type semiconductor layer (52G). An anode structure (50A) of the diode (13) includes a p-type semiconductor layer (52A). The gate structure (50G), a drain structure (51D) of the ESD protection FET (12), and the anode structure (50A) are electrically connected to each other. A source structure (50S) of the power FET (11), a source structure (51S) of the ESD protection FET (12), and a terminal structure (50R) of the resistor element (14) are electrically connected to each other. A gate structure (51G) of the ESD protection FET (12), a cathode structure (50K) of the diode (13), and a terminal structure (51R) of the resistor element (14) are electrically connected to each other.

In an embodiment an amplifier includes a first MOS transistor having a drain connected to an output of the amplifier and a source coupled to a first node configured to receive a first power supply potential, a first capacitive element connected between an input of the amplifier and a gate of the first MOS transistor, a first current source connecting the drain of the first MOS transistor to a second node configured to receive a second power supply potential and a resistive element and a second capacitive element connected in parallel between the gate and the drain of the first MOS transistor, the resistive element including a switched capacitor.

The utility model provides a resistor element. The resistor element comprises a substrate; the resistor body is arranged on the front surface of the substrate; and the first protection layer is arranged on the back surface of the substrate. According to the invention, the first protection layer is arranged on the back surface of the substrate, so that the substrate is protected by the first protection layer, the possibility of appearance damage of the resistor in the manufacturing process is effectively reduced, and the product yield is greatly improved.

Each of n memory cells (150 etc.) provided in a semiconductor storage device (130a) has: a first resistance element (61p) and a first switch element (71p), which is controlled by a first word line (WL), connected in series between a bit line (BL) and a first source line (SL); a second resistance element (62n) and a second switch element (72n), which is controlled by the first word line (WL), connected in series between the bit line (BL) and a second source line (SLB); a third switch element (73p), which is controlled by a second word line (WLB), connected in series with the second resistance element (62n) between the bit line (BL) and the first source line (SL); and a fourth switch element (74n), which is controlled by the second word line (WLB), connected in series with the first resistance element (61p) between the bit line (BL) and the second source line (SLB).

Circuit structure comprising: a resistor-capacitor circuit (RC circuit) (110) having a first node (A), a second node (B) separated from the first node (A) by a resistive element (112) and a capacitive element (114), and a third node (C) between the resistive element (112) and the capacitive element (114); a trigger transistor (122) having a pair of source / drain (S / D) terminals connected between the first node (A) and the second node (B) in parallel with the RC circuit (110) and a gate terminal coupled to the third node (C) of the RC circuit (110); a mirror transistor (126) having a pair of S / D terminals coupled between the first node (A) and the second node (B) in parallel with the RC circuit (110), and a gate terminal coupled to the gate terminal of the trigger transistor (122), wherein a current through the pair of S / D terminals of the mirror transistor (126) is smaller than a current through the pair of S / D terminals of the trigger transistor (122); and a snapback device (130) having a gate terminal (T Gate ) for controlling the current flow in the snapback device (130), the snapback device (130) comprising: a P-well (142) having a first N-doped region (146) coupled to one of the first nodes (A), an N-well (144) adjacent to the P-well (142) and having a first P-doped region (148) coupled to the second node (B), wherein a current path from the first node (A) to the second node (B) runs through the snapback device (130) in parallel with the RC circuit (110), and at least one doped region within the P-well (142) or the N-well (144) coupled to a selected one of the pair of S / D terminals of the mirror transistor (126) and the gate terminal (T Gate ) of the snapback device (130), wherein the at least one doped region has a same doping type with respect to the P-well (142) or the N-well (144).

A method includes forming a transistor over a substrate; and forming a resistive element over the transistor, in which forming the resistive element includes forming a bottom electrode electrically connected to a source / drain region of the transistor; forming a resistive switching layer over the bottom electrode, in which the resistive switching layer is made of metal halide; and forming a top electrode over the resistive switching layer.