64results about How to "Improve manufacturing yield" patented technology

The invention provides a back contact photovoltaic cell piece capable of preventing stacking scratch in a high-temperature passivation process. The back contact photovoltaic cell piece comprises a back contact photovoltaic cell piece body and a plurality of soft isolation protrusions located on the light receiving face of the back contact photovoltaic cell piece body. The soft isolation protrusions are used for supporting photovoltaic cells to be mutually isolated when the photovoltaic cells are stacked layer by layer, and the soft isolation protrusions are resistant to high temperature of 300 DEG C and do not become sticky or yellow within 3 hours. According to the invention, the soft isolation projections are arranged on the light receiving surface of the back contact photovoltaic cell sheet body to support mutual isolation of the photovoltaic cell sheets when the photovoltaic cell sheets are stacked layer by layer, so that the photovoltaic cell sheets can be protected from being scratched in the stacking and moving process; the flexible isolation protrusions are arranged on the back contact photovoltaic cell piece, the flexible isolation protrusions can be prevented from scratching the surface of the photovoltaic cell piece due to the specific flexibility of the flexible isolation protrusions, meanwhile, the flexible isolation protrusions can bear the passivation temperature of 300 DEG C or above and do not crack or yellow or adhere to the cell piece, and therefore it can be ensured that the back contact photovoltaic cell piece is subjected to high-temperature passivation in a multi-layer stacking mode, and the passivation efficiency is improved.

The invention provides a correction jig, a correction method, a rotating shaft cover plate and foldable electronic equipment. The correction jig is used for correcting the straightness of a long-strip-shaped part and is provided with a first groove, and the first groove extends in the first direction; in the second direction, the range of the difference value w1-w1'between the width w1 of the first groove and the width w1 'of the long-strip-shaped part is larger than or equal to 0.05 mm and smaller than or equal to 0.1 mm, and the first direction intersects with the second direction. The correction jig is simple in structure.

This invention discloses a method, system, storage medium, and electronic device for X-ray detector quality inspection. The method includes: acquiring an original brightness field image captured by an X-ray detector, and correcting the original brightness field image to obtain a corrected brightness field image; determining target parameters for the corrected brightness field image; if the target parameters exceed a corresponding threshold range, determining the corrected brightness field image as an abnormal image; otherwise, determining the corrected brightness field image as a normal image; if the corrected brightness field image is an abnormal image, determining the X-ray detector quality is abnormal; otherwise, determining the X-ray detector quality is normal. This invention monitors the production quality of X-ray detectors by detecting the quality of X-ray images captured by the X-ray detector, thereby helping to optimize the research and development of X-ray detectors and improve their manufacturing yield.

This invention discloses a middle plate, an electrode chamber assembly, and an electrolytic hydrogen production device. The middle plate includes a body and a circulation plate. The body is integrally stamped from a metal plate. An S-shaped annular sealing channel is stamped around the perimeter of the body surface. Several first protrusions and second protrusions are stamped on two surfaces of the body inside the annular sealing channel. The circulation plate is inclined and fixedly connected to the first protrusions. The circulation plate is disposed within the annular sealing channel, and the distance between its top edge and the body surface is less than the distance between its bottom edge and the body surface. The electrode chamber assembly is assembled using the aforementioned middle plate, and the electrolytic hydrogen production device utilizes the aforementioned electrode chamber assembly. This invention provides excellent sealing performance. The stamped structure integrating the anode and cathode chambers and the middle plate effectively reduces leakage points and lowers the risk of external leakage. Furthermore, it reduces spot welding processes, lowers internal contact resistance, and thus reduces the energy consumption of the electrolyzer. The above structure is rationally configured and easy to install.

The utility model discloses a semiconductor equipment sampling device, which relates to the technical field of semiconductor processing, and comprises a driving mechanism, a buffer mechanism and at least two suction heads, the buffer mechanism comprises at least two elastic expansion pieces; the elastic expansion pieces are connected with the suction heads in a one-to-one correspondence manner, so that the suction heads can elastically move; the driving mechanism is connected with the elastic expansion pieces and used for driving the elastic expansion pieces to move close to each other or away from each other. According to the design, by optimizing the buffering effect and the adsorption stability, the sample rejection rate is reduced, and the semiconductor manufacturing yield is increased; and the continuity and the efficiency of the production process can be improved by adopting the universal design and reducing the remodeling operation.

The utility model relates to semiconductor ion implantation equipment technical field, and disclose a kind of multi-functional high-efficiency boron fluoride ion implantation chamber, including support connecting mechanism, sealing assembly, support connecting mechanism contains chamber main body, internal injection component, multifunctional component assembly interface, upper sealing ring assembly groove, side sealing ring assembly groove, top connecting hole, top auxiliary sealing ring assembly groove, side fixed base, assembly interface sealing ring assembly groove, through slot, toughened glass sheet.The utility model is through the curved surface gradual change flow guide structure of internal injection component, boron fluoride ion distribution in chamber is accurately controlled, ion distribution uniformity is significantly improved, guarantee semiconductor material doping consistency, effectively improve device manufacturing yield, adapt high-precision semiconductor process demand.

This invention relates to the field of wearable electronic device technology, specifically disclosing a partitioned, double-sided, skin-contact, sweat-wicking hybrid energy harvesting armband and its manufacturing method. The armband includes a flexible strip substrate, an organic photovoltaic (PV) power generation unit, a polymer thermoelectric power generation unit, a skin-contact thermal interface layer, a cold-end heat dissipation structure, and a circuit integration module. The PV power generation unit and the polymer thermoelectric power generation unit are partitioned and mounted on the same flexible strip substrate. Microstructured channels are pre-set within the skin-contact thermal interface layer to guide sweat and reduce contact thermal resistance. A process route is adopted where the organic PV is first fabricated and encapsulated with high barrier properties, followed by the printing of the polymer thermoelectric power generation unit. A porous fabric or fin array heat dissipation structure is integrated at the cold end of the polymer thermoelectric power generation unit. This invention can improve photoelectric conversion efficiency, stabilize operating temperature difference, reduce contact thermal resistance, increase manufacturing yield, enhance output power, and improve wearing comfort.

The invention relates to a preparation method of a composite substrate and the composite substrate, and the method comprises the steps: providing a wafer bonding structure to be processed, the wafer bonding structure comprises a supporting substrate, a device substrate, and an insulating layer located between the supporting substrate and the device substrate, and the first surface side of the supporting substrate is provided with a cavity structure, the first surface is arranged towards the second surface of the device substrate; the device substrate is thinned to a preset thickness from the third surface of the device substrate, and the preset thickness is smaller than or equal to 10 micrometers; the thinning step comprises the substeps of thinning the device substrate by adopting a mechanical grinding process, wherein the mechanical grinding process comprises the substeps of thinning the device substrate by adopting a coarse grinding process until the thickness is greater than or equal to 120 microns; thinning the device substrate until the thickness is greater than or equal to 60 microns by adopting an accurate grinding process; thinning the device substrate to a third preset thickness by adopting a wet etching process; and reducing the thickness of the device substrate to a preset thickness by adopting a chemical mechanical grinding process. In this way, the device substrate can be thinned to be below 10 microns and is not damaged.

This invention discloses a warm isostatic pressing (WIP) densification process for solid-state batteries. This invention relates to the field of solid-state battery manufacturing technology and aims to solve the problem of uneven stress and cracking of thin electrolyte membranes caused by existing isostatic pressing processes. The method involves aligning and bonding the negative electrode sheet with a solid electrolyte membrane containing a substrate, followed by cold isostatic pressing pre-pressing. The substrate is then removed, and the positive electrode sheet is bonded to complete cell assembly. The cell is placed in a perforated fixture and a flexible sheath, vacuum-sealed, and then sent into the warm isostatic pressing chamber. A pressure-transmitting medium is injected, and the temperature is programmed to reach the target process temperature, followed by pressurization to the target process pressure. Based on the material system of the solid electrolyte membrane, pressure and temperature are maintained at the corresponding temperature and pressure. Controllable pressure release is performed at a rate slower than the pressurization rate, while simultaneously cooling to below the set temperature. This method improves the manufacturing yield, interface densification, and consistency of the cell through step-by-step pre-pressing and programmed temperature and pressure control.

Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, a plurality of word lines, a dielectric layer, and a plurality of bit lines. The substrate comprises active structures and shallow trench isolations. The word lines are embedded in the substrate and staggered with the active structures and the shallow trench isolations, respectively. The dielectric layer is arranged on the substrate and covers the top surfaces of the word lines. The bit lines extend on the substrate in a first direction. The bit lines comprise at least one first bit line which simultaneously overlaps the active structures and the shallow trench isolations and has a bottom surface physically contacting only the dielectric layer, and a plurality of second bit lines which are arranged below a plurality of bit line plugs penetrating through the dielectric layer and directly contacting the active structures. The first bit line is arranged as a dummy bit line to maintain the same overall light flux when the photolithography manufacturing process is performed, and to improve the manufacturing yield of the semiconductor device.

The invention discloses an organic compound taking adamantane as a core and an organic electroluminescent device containing the organic compound. The organic compound with adamantane as the core has a low visible light refractive index in the visible light field, is matched with a high-refractive-index material to form a low-high double-layer light extraction layer, and can effectively improve the light extraction efficiency of the organic electroluminescent device and greatly reduce the angle dependence after being applied to the organic electroluminescent device. Therefore, the luminous efficiency of the device is improved and the visual bias performance is optimized.

The application provides a braiding device and a braiding method for manufacturing a double-head closed-loop dense net support. The braiding device comprises a rotating disc, a spindle assembly with a plurality of spindles, the spindle assembly being mounted on the rotating disc, the plurality of spindles being arranged in sequence along the circumference of the rotating disc, every two spindles being symmetrical about the center of the rotating disc, and any two symmetrical spindles being used for sleeving a braiding ring so that the centers of all the braiding rings intersect at the center of the rotating disc; and a braiding core rod coaxially arranged with the rotating disc, the braiding core rod being movable in the axial direction of the rotating disc, the braiding core rod penetrating the center intersection area of the braiding ring and making the center intersection area located at a braiding starting point of the braiding core rod, and the braiding core rod tensioning all the braiding rings at the braiding starting point. The braiding device can braiding the double-head closed-loop dense net support on the braiding core rod at one time through the movement of all the spindles along the circumference of the rotating disc and the movement of the braiding core rod along the axial direction of the rotating disc, thereby effectively reducing the manufacturing difficulty of the double-head closed-loop dense net support and improving the manufacturing yield.

The embodiment of the invention provides a display panel and a display device.The display panel comprises a substrate, a crack detection line, a crack detection transistor and a touch electrode layer, the crack detection line and the crack detection transistor are both located in a non-display area, and the touch electrode layer is located on the side, away from the substrate, of a film layer where a crack detection signal line is located; the crack detection transistor is arranged on one side, far away from the substrate, of the film layer; wherein the touch electrode layer comprises a first line changing part located in the non-display area, and the crack detection line is electrically connected with the crack detection transistor through the first line changing part. According to the display panel, the electrostatic charges transmitted to the crack detection transistor by the crack detection line are reduced, the probability that the crack detection transistor is damaged by static electricity is reduced, and the preparation yield of the display panel is improved.

The present application relates to the technical fields of intelligent manufacturing and automation control, and discloses a kind of intelligent regulation and control methods for the wall thickness of crucible spin pressing in piezoelectric single crystal growth, comprising: collecting data in the process of spin pressing, and obtaining stable acquisition sequence by preprocessing;Stable acquisition sequence is fused by adaptive weighted fusion and Kalman filtering, and the fused wall thickness is obtained by fusing the laser thickness value and the wall thickness value and compensation value respectively mapped by the spin pressing force, torque and eccentricity;Calculate the comprehensive deviation vector of wall thickness deviation, local wall thickness thinning rate, eccentricity deviation and roundness error;Based on the comprehensive deviation vector and the wall thickness deviation, the fuzzy adaptive PID output correction value and the hierarchical threshold comparison are executed in parallel to generate pass jump and trajectory reconstruction instructions, and the closed-loop cooperative control is formed by issuing the numerical control spin pressing system;After each pass is completed, the wall thickness distribution is obtained by fusion and solution, and the deviation is determined to add compensation pass or trajectory reconstruction, and iteration is carried out until the requirements are met.The present application realizes the online intelligent closed-loop regulation and control of the wall thickness of crucible spin pressing.

The application discloses a copper-clad ceramic structural member and a preparation method thereof. The copper-clad ceramic structural member comprises a substrate body, the substrate body is provided with a pin seat positioning hole; a plurality of pin seats are arranged in the pin seat positioning hole respectively, and the pin seat and the substrate body are fixedly connected; and a pin is connected with the pin seat correspondingly. The pin seat positioning hole is additionally arranged on the substrate body, so that the position of the pin seat on the substrate body can be accurately determined, deviation of the position of the pin seat is avoided, the pin seat with slight deviation can be pulled back to the design position by means of the siphon effect, the pin can be accurately connected with the pin seat, the pin cannot be inserted into the pin seat due to the deviation of the position of the pin seat, damage to the substrate body is avoided, the preparation yield of the copper-clad ceramic structural member is improved, and the production cost is reduced.

The present application provides a micro-electro-mechanical infrared light sensing device and a manufacturing method thereof. The micro-electro-mechanical infrared light sensing device includes a substrate and an infrared light sensing element disposed above the substrate. The infrared light sensing element has a sensing region and a light absorption region which do not overlap each other. The infrared light sensing element includes two infrared light absorption structures, an infrared light sensing layer, and a finger electrode structure. Each of the two infrared light absorption structures includes at least one infrared light absorption layer, and the two infrared light absorption structures are distributed in the sensing region and the light absorption region. The infrared light sensing layer is between the two infrared light absorption structures, and the infrared light sensing layer is located in the sensing region and does not extend to the light absorption region. The finger electrode structure is located in the sensing region, and the finger electrode structure is in electrical contact with the infrared light sensing layer.

The application discloses a kind of stator core, stator, motor and compressor, it is related to motor technical field, wherein, stator core includes multiple laminated punching sheet, the outer circle of each punching sheet is equipped with multiple cutting edge, multiple cutting edge is equipped with a pair of riveting slot, multiple cutting edge is also equipped with welding site, multiple punching sheet is welded together by welding site;Two the pair of riveting slot is respectively arranged in the opposite side of stator core, the center of groove bottom of two the pair of riveting slot is respectively connected with the center of circle of stator core and is recorded as AO and BO, the included angle of AO and BO is θ1, θ1 satisfies 120 ° < θ1 ≤ 180 °.The technical scheme provided by the application can guarantee that stator core does not scatter piece and improves the manufacturing yield of motor at the same time, reduces the eddy current loss generated due to rivet, to improve motor efficiency.

The invention relates to the technical field of wearable electronic equipment, and particularly discloses a partitioned double-sided skin-attaching perspiration type mixed energy collection arm band and a preparation method thereof, and the arm band comprises a flexible band-shaped substrate, an organic photovoltaic power generation unit, a polymer thermoelectric power generation unit, a skin-attaching heat conduction interface layer, a cold end heat dissipation structure and a circuit integration module. An organic photovoltaic power generation unit and a polymer thermoelectric power generation unit are arranged on the same flexible strip-shaped substrate in a partitioned mode, and a micro-structure channel is preset in a skin-attaching heat conduction interface layer to dredge sweat and reduce contact thermal resistance; a process route of firstly completing organic photovoltaic preparation and high-barrier packaging and then printing a polymer thermoelectric power generation unit is adopted; a porous fabric or fin array heat dissipation structure is integrated at the cold end of the polymer thermoelectric power generation unit. The photoelectric conversion efficiency can be improved, the working temperature difference can be stabilized, the contact thermal resistance can be reduced, the preparation yield can be improved, the output power can be enhanced, and the wearing comfort can be improved.

The invention discloses a manufacturing method of a semiconductor device, a gray scale photomask and the semiconductor device. The method comprises the following steps: providing a substrate, and forming an inorganic layer and a photoresist layer on the substrate; a gray scale photomask is configured, and the gray scale photomask comprises a first photomask with two light transmitting areas and a second photomask with two light filtering areas with different light transmittances. The exposure light penetrates through the gray scale photomask so as to carry out single exposure with different energies on the photoresist layer, and photoresist patterns with height differences are formed after development. And finally, transferring the photoresist pattern to the inorganic layer through ion etching, so that the inorganic layer forms an etched microstructure with corresponding height difference. Therefore, compared with the traditional photoetching process using electron beam direct writing or multiple photomask exposure, the method disclosed by the invention has the advantages that the process steps can be greatly shortened, the manufacturing cost and time can be reduced, the structural precision loss caused by multiple alignment errors can be reduced, and the manufacturing efficiency and the yield can be obviously improved.

This invention relates to the field of process control technology, specifically to an intelligent control system for thin-film lithium niobate etching processes based on machine learning. The system includes: a process sensing and acquisition module that collects thin-film lithium niobate etching process parameters, etching effect detection data, process environment data, and etching equipment status data in real time; a machine learning processing center that integrates and analyzes the data, using machine learning algorithms to uncover potential patterns, correlations, and anomalies; a process visualization and interactive platform that presents a real-time heatmap of etching parameter distribution, etching defect location, and etching effect trends, automatically switching interface layouts according to different process scenarios; an intelligent process decision engine that dynamically generates etching parameter adjustment strategies and process emergency response plans; and an etching parameter adjustment unit that adjusts the process parameters of the thin-film lithium niobate etching equipment and updates the control status. This solves the problems of poor adjustment response and low etching yield in existing technologies.

The invention provides a preparation method of a circuit board with metalized half holes and a side surface interconnection ceramic substrate, and relates to the technical field of ceramic processing. The preparation method of the circuit board with the metalized half holes comprises the following steps: preparing a plurality of first through holes in a ceramic substrate; metalizing the front and back surfaces of the ceramic substrate to form a plurality of metalized through holes; performing secondary punching on all the metalized through holes to obtain a ceramic substrate comprising a plurality of second through holes; wherein the second through hole comprises two arc-shaped half holes, and the two arc-shaped half holes are in metal-free connection; preparing an outer circuit and a solder mask layer on the ceramic substrate comprising the plurality of second through holes to obtain a transition ceramic substrate; and based on the positions of the two arc-shaped half holes in the second through hole, cutting the transition ceramic substrate to obtain the circuit board containing the metalized half holes. According to the invention, the preparation difficulty of the metalized half hole can be reduced, and the yield is high.

The present disclosure provides a light-emitting diode with improved peeling and tearing and a preparation method thereof, and belongs to the technical field of optoelectronic manufacturing. The light-emitting diode comprises an epitaxial layer, a functional stack layer, an electrode and a filling layer. The functional stack layer is located on the epitaxial layer, and the electrode is located on the functional stack layer and electrically connected with the epitaxial layer. The surface of the functional stack layer away from the epitaxial layer comprises a stepped surface, and the filling layer is located on the stepped surface. The embodiment of the present disclosure can improve the problem that the bonding metal is easily torn and damaged during laser peeling, and improve the reliability of the light-emitting diode.

This invention discloses a quantum dot hybrid integrated multicolor display, comprising a CMOS wafer substrate, an anode via, a light-emitting unit, a filler layer, and a cover glass. The CMOS wafer substrate contains tungsten vias, and the anode vias are disposed within the CMOS wafer substrate, electrically connected to a CMOS wafer driving circuit through the tungsten vias. The anode vias extend through the surface of the CMOS wafer substrate. A light-emitting unit is disposed on the surface of the anode via on the CMOS wafer substrate, and a driving current signal is provided to the light-emitting unit through the anode via. The filler layer, formed by OC adhesive, covers the CMOS wafer substrate and the surface of the light-emitting unit. The cover glass seals the entire device. This invention avoids the challenges of micro-LED colorization and the immature blue light lifetime efficiency of quantum dots by combining quantum dots with blue LEDs. This quantum dot hybrid integrated multicolor display has a simple structure, is easy to use, has a high manufacturing yield, and exhibits good luminous effect. A manufacturing method for this quantum dot hybrid integrated multicolor display is also disclosed.

The present disclosure relates to a gallium nitride HEMT device and a preparation method thereof, the method comprising: ion implanting a first silicon carbide substrate to form a defect layer at a preset depth, to obtain an ion-implanted first silicon carbide substrate; performing reverse-type doping on the surface of the ion-implanted first silicon carbide substrate to form a first insulating layer on the surface, to obtain a reverse-type doped first silicon carbide substrate; obtaining a second silicon carbide substrate; directly bonding the second silicon carbide substrate with the reverse-type doped first silicon carbide substrate to obtain a first composite substrate; peeling the first composite substrate along the defect layer to obtain a second composite substrate; performing insulating treatment on the surface of the second composite substrate to obtain a treated second composite substrate; and preparing the gallium nitride HEMT device based on the treated second composite substrate. The gallium nitride HEMT device preparation method disclosed by the present disclosure can not only reduce the preparation cost, but also expand the size of the gallium nitride HEMT device.

The application discloses a photovoltaic module and relates to the technical field of photovoltaic modules. The photovoltaic module comprises a cover plate, a glue film, a cell array, a lower glue film and a back plate. The cell array comprises at least one parallel group arranged along a first direction, each parallel group comprises at least two cell strings in parallel, each cell string comprises a plurality of cell pieces arranged along a second direction and connected in series, the back surface of the corresponding cell pieces in the first direction in each parallel group is provided with a plurality of sub bus bars, the plurality of sub bus bars are connected with the conductive wires of the same conductive type of the cell pieces, one conductive wire is connected with one sub bus bar, adjacent conductive wires are connected with different sub bus bars, and the width of the sub bus bar is less than or equal to 5 mm. The embodiment can effectively reduce the pulling force of the sub bus bar on the conductive wire when the sub bus bar is cold contracted, and reduce the probability of problems such as virtual welding, welding separation, cell piece warping and the like between the conductive wire and the grid line of the cell piece.

The invention provides an etching end point detection method, a semiconductor structure and a manufacturing method thereof, and the etching end point detection method can accurately determine an etching end point based on the direct detection of the concentration of a first reaction product in an etching process. Compared with trend detection of the concentration of the first reaction product through a spectrum mode and the like, the accuracy of the etching end point determined in the method is higher. Meanwhile, according to the manufacturing method of the semiconductor structure based on the etching end point detection method, the etching end point can be automatically detected in the etching process of the wafer to be etched, etching is stopped, excessive etching or insufficient etching is avoided, the accuracy of the size of the formed semiconductor structure and the stability of the etching process are guaranteed, and the yield is improved. Therefore, the manufacturing yield of the semiconductor structure is improved.

This invention discloses a disc-shaped microfluidic chip detection kit and method, relating to the field of rapid food safety detection. A disc-shaped substrate has a ring-shaped central flow channel, and in the direction of rotation towards the central flow channel, a lysis buffer chamber, an elution buffer chamber, a first washing buffer chamber, a second washing buffer chamber, and a magnetic bead reagent chamber are arranged in a ring-shaped sequence. At least four reaction chambers are arranged in a ring-shaped interval in the direction away from the rotation axis of the central flow channel. A ring magnet is positioned on the bottom plate facing the central flow channel, and a pin for opening a contact valve is arranged around the periphery of the ring magnet. Two types of heating plates with temperature differences are respectively positioned on the heating plate facing the reaction chambers. This invention relies on centrifugal force to achieve autonomous fluid drive, combined with constant temperature zone control to complete rapid amplification. It not only eliminates cross-contamination problems caused by magnetic bead transport at the structural level, but also achieves a high degree of integration of the entire process from nucleic acid extraction to fluorescence amplification, effectively improving the overall detection efficiency of pathogens.

The application provides an ion implantation layer filling optimization method, comprising the following steps: S1. providing a layout; S2. identifying a first pattern and a second pattern from the layout; the first pattern is an ion implantation layer pattern processed by center offset and photolithography offset, comprising a first side parallel to a first direction and a second side parallel to a second direction, and the first side and the second side intersect to form a vertex A; the second pattern is an edge ion implantation layer pattern, comprising a third side parallel to the first direction and a fourth side parallel to the second direction, and the third side and the fourth side intersect to form a vertex B; any one of the following conditions is satisfied: ① the distance Lh between the second side and the fourth side in the first direction is less than L1, and the distance Lv between the first side and the third side in the second direction is less than L2; ② after the layout is simulated by OPC, the simulated distance Ls between the vertex A and the vertex B is less than L3; S3. constructing a filling pattern: moving the vertex A by Bh in the reverse direction of the first direction and by Lv+Bv in the reverse direction of the second direction; moving the vertex B by Bh in the forward direction of the first direction and by Lv+Bv in the forward direction of the second direction; extending the boundary of each moving end point perpendicularly to the corresponding side to form a filling pattern.

The invention provides an onboard optical coupling device which is connected between two data processing devices. The onboard optical coupling device includes an optical waveguide having a plurality of alignment channel units and a plurality of waveguide channels. The first photonic device includes a plurality of first return channels and a first optical channel. The second photonic device includes a plurality of second return channels and a second optical channel. In the one-time alignment process, the multiple first optical channels and the multiple second optical channels are optically aligned with the corresponding waveguide channels, and meanwhile the first return channel and the second return channel are optically aligned with the alignment channel unit, so that the optical alignment efficiency is improved.