19results about How to "Improve manufacturing yield" patented technology

The utility model relates to semiconductor ion implantation equipment technical field, and disclose a kind of multi-functional high-efficiency boron fluoride ion implantation chamber, including support connecting mechanism, sealing assembly, support connecting mechanism contains chamber main body, internal injection component, multifunctional component assembly interface, upper sealing ring assembly groove, side sealing ring assembly groove, top connecting hole, top auxiliary sealing ring assembly groove, side fixed base, assembly interface sealing ring assembly groove, through slot, toughened glass sheet.The utility model is through the curved surface gradual change flow guide structure of internal injection component, boron fluoride ion distribution in chamber is accurately controlled, ion distribution uniformity is significantly improved, guarantee semiconductor material doping consistency, effectively improve device manufacturing yield, adapt high-precision semiconductor process demand.

The application discloses a copper-clad ceramic structural member and a preparation method thereof. The copper-clad ceramic structural member comprises a substrate body, the substrate body is provided with a pin seat positioning hole; a plurality of pin seats are arranged in the pin seat positioning hole respectively, and the pin seat and the substrate body are fixedly connected; and a pin is connected with the pin seat correspondingly. The pin seat positioning hole is additionally arranged on the substrate body, so that the position of the pin seat on the substrate body can be accurately determined, deviation of the position of the pin seat is avoided, the pin seat with slight deviation can be pulled back to the design position by means of the siphon effect, the pin can be accurately connected with the pin seat, the pin cannot be inserted into the pin seat due to the deviation of the position of the pin seat, damage to the substrate body is avoided, the preparation yield of the copper-clad ceramic structural member is improved, and the production cost is reduced.

This invention relates to the field of process control technology, specifically to an intelligent control system for thin-film lithium niobate etching processes based on machine learning. The system includes: a process sensing and acquisition module that collects thin-film lithium niobate etching process parameters, etching effect detection data, process environment data, and etching equipment status data in real time; a machine learning processing center that integrates and analyzes the data, using machine learning algorithms to uncover potential patterns, correlations, and anomalies; a process visualization and interactive platform that presents a real-time heatmap of etching parameter distribution, etching defect location, and etching effect trends, automatically switching interface layouts according to different process scenarios; an intelligent process decision engine that dynamically generates etching parameter adjustment strategies and process emergency response plans; and an etching parameter adjustment unit that adjusts the process parameters of the thin-film lithium niobate etching equipment and updates the control status. This solves the problems of poor adjustment response and low etching yield in existing technologies.

The present disclosure provides a light-emitting diode with improved peeling and tearing and a preparation method thereof, and belongs to the technical field of optoelectronic manufacturing. The light-emitting diode comprises an epitaxial layer, a functional stack layer, an electrode and a filling layer. The functional stack layer is located on the epitaxial layer, and the electrode is located on the functional stack layer and electrically connected with the epitaxial layer. The surface of the functional stack layer away from the epitaxial layer comprises a stepped surface, and the filling layer is located on the stepped surface. The embodiment of the present disclosure can improve the problem that the bonding metal is easily torn and damaged during laser peeling, and improve the reliability of the light-emitting diode.

This invention discloses a disc-shaped microfluidic chip detection kit and method, relating to the field of rapid food safety detection. A disc-shaped substrate has a ring-shaped central flow channel, and in the direction of rotation towards the central flow channel, a lysis buffer chamber, an elution buffer chamber, a first washing buffer chamber, a second washing buffer chamber, and a magnetic bead reagent chamber are arranged in a ring-shaped sequence. At least four reaction chambers are arranged in a ring-shaped interval in the direction away from the rotation axis of the central flow channel. A ring magnet is positioned on the bottom plate facing the central flow channel, and a pin for opening a contact valve is arranged around the periphery of the ring magnet. Two types of heating plates with temperature differences are respectively positioned on the heating plate facing the reaction chambers. This invention relies on centrifugal force to achieve autonomous fluid drive, combined with constant temperature zone control to complete rapid amplification. It not only eliminates cross-contamination problems caused by magnetic bead transport at the structural level, but also achieves a high degree of integration of the entire process from nucleic acid extraction to fluorescence amplification, effectively improving the overall detection efficiency of pathogens.

The application provides an ion implantation layer filling optimization method, comprising the following steps: S1. providing a layout; S2. identifying a first pattern and a second pattern from the layout; the first pattern is an ion implantation layer pattern processed by center offset and photolithography offset, comprising a first side parallel to a first direction and a second side parallel to a second direction, and the first side and the second side intersect to form a vertex A; the second pattern is an edge ion implantation layer pattern, comprising a third side parallel to the first direction and a fourth side parallel to the second direction, and the third side and the fourth side intersect to form a vertex B; any one of the following conditions is satisfied: ① the distance Lh between the second side and the fourth side in the first direction is less than L1, and the distance Lv between the first side and the third side in the second direction is less than L2; ② after the layout is simulated by OPC, the simulated distance Ls between the vertex A and the vertex B is less than L3; S3. constructing a filling pattern: moving the vertex A by Bh in the reverse direction of the first direction and by Lv+Bv in the reverse direction of the second direction; moving the vertex B by Bh in the forward direction of the first direction and by Lv+Bv in the forward direction of the second direction; extending the boundary of each moving end point perpendicularly to the corresponding side to form a filling pattern.

The application discloses a fan rotating shaft mechanism, which comprises a bearing assembly matched with a base hole shaft, the bearing assembly realizes rolling friction with the side surface and bottom surface of the base at the same time, the bearing assembly comprises a rotating shaft base, a plurality of circular grooves distributed in a circle are arranged in the rotating shaft base, steel balls are arranged in the circular grooves, a rotating shaft cover plate is arranged on the top of the rotating shaft base and is used for positioning and rolling of the steel balls, and the bottom and inner side of the circular groove are provided with through holes; the steel balls are exposed to the rotating shaft base through the through holes in the bottom and inner side and form rolling friction with the base; single steel ball is adopted to realize bidirectional rolling friction of the inner wall and bottom of the bearing; the elastic arm in the horizontal direction solves the hole shaft matching tolerance problem in practical application and solves the manufacturing precision problem of parts; and through the double improvement of high-precision hardware bearing replacement POM self-lubricating plastic and mechanism simplification, the manufacturing cost is greatly reduced, and the manufacturing yield and product motion life are improved.

The invention relates to a wafer bearing device and an adjusting method of the wafer bearing device. The wafer bearing device comprises a bearing table used for bearing a wafer; the bearing table comprises at least one sub-bearing table, and a bearing surface is arranged on the sub-bearing table; the at least one adjusting assembly is arranged corresponding to the sub-platform deck, and the adjusting assembly is arranged on one side, deviating from the bearing surface, of the corresponding sub-platform deck; and the adjusting assembly is used for driving the sub-stage to move so as to adjust the orientation of the bearing surface of the sub-stage and enable the bearing surface to be in contact with the warping position of the wafer. According to the invention, the warped wafer can be better attached to the bearing platform, and the processing precision and the manufacturing yield of the subsequent manufacturing process can be improved.

The utility model provides a kind of diffusion silicon pressure sensor, comprising: pedestal, metal needle is provided on the pedestal;Process joint, including first end and second end, installation cavity is provided in the second end of process joint, pressure sensitive chip is provided in installation cavity, the pressure sensitive chip is blocked in the pedestal by the pedestal, the pressure sensitive chip is electrically connected between the metal needle;Metal diaphragm, set in the first end of process joint, for inserting measured medium, and measured medium pressure is transferred to the pressure sensitive chip;The circumference of the metal diaphragm is welded between the first end of process joint and seals.This scheme solves the frost heaving failure problem that has long plagued diffusion silicon pressure sensor in the way of simple and efficient, brings significant improvement in reliability, cost, process and application range etc.

This invention discloses a three-dimensional integrated packaging structure and fabrication method of a glass core TGV panel with embedded heterogeneous chips. The upper and lower redistribution layers of the glass core are vertically interconnected through several metal vias. The glass core layer is provided with dry cavities, and several electronic components are embedded in the glass core layer along the Z-axis through these cavities. The electronic components are horizontally wired and transmit signals through the upper and lower redistribution layers, and are electrically connected to external circuits through the upper and lower redistribution layers and metal vias. This invention integrates the cost advantages of large-size glass panels, the performance advantages of glass materials, the vertical interconnection advantages of TGV, the density advantages of embedded packaging, and thermal management technology. It addresses the shortcomings of current packaging technologies in terms of high performance, high integration, low cost, and excellent heat dissipation, providing a system-level packaging solution with superior overall performance. This solution can improve system performance, heat dissipation performance, and integration, while reducing costs.

This invention provides a method for fabricating a superjunction structure, comprising the following steps: providing a substrate having a first epitaxial layer; depositing a hard mask layer on the first epitaxial layer; patterning the hard mask layer, and using the patterned hard mask layer as a mask to etch the first epitaxial layer and form multiple trenches; wherein the minimum width of the trench is W1, and the maximum width of the trench is W1+Δ; forming a second epitaxial layer of a second conductivity type on the sidewalls and bottom of the trench, and on the surface of the hard mask layer, until the second epitaxial layer completely fills the trench of the minimum width and at least part of the second epitaxial layer on the sidewalls of the trench forms unfilled gaps; performing a filling process to deposit or grow an insulating dielectric layer in the trench to fill the gaps, until the distance between the bottom of the filling structure in all trenches and the upper surface of the first epitaxial layer is greater than a preset distance; and performing a planarization process to remove the second epitaxial layer, the insulating dielectric layer, and the hard mask layer.

The application discloses a quantum sensor chip packaging structure capable of realizing wafer-level planar co-packaging, which comprises a microfabricated atomic cell, a light source chip assembly and a light detection chip assembly, the microfabricated atomic cell is integrated with a reflecting element, the reflecting element is used for adjusting the optical path of the light beam entering the microfabricated atomic cell, the microfabricated atomic cell, the light source chip assembly and the light detection chip assembly are supported on a packaging substrate through a micro-bump assembly and are directly electrically interconnected with the packaging substrate through the micro-bump assembly, the micro-bump assembly comprises a plurality of micro-bumps, the distribution mode of the micro-bumps is for the purpose of realizing the supporting function and the electrical interconnection, the size of the micro-bump supporting the microfabricated atomic cell, the light source chip assembly and / or the light detection chip assembly is adjustable, the optical path of the microfabricated atomic cell is regulated by adopting the combination of micro-bumps with different sizes, and the planar co-packaging of the microfabricated atomic cell and other key quantum sensor components can be realized.

The utility model belongs to gas meter wiring harness welding field discloses a kind of gas meter terminal post assemblies, the gas meter terminal post assembly includes multiple core wires, rubber piece and joint piece, multiple core wires are set in rubber piece and with rubber piece vulcanization integrated molding, rubber piece is provided with stop portion, joint piece is sleeved in rubber piece, and one end of joint piece is stopped in stop portion. Compared with prior art, the gas meter terminal post assembly of the embodiment only includes core wire, rubber piece and joint piece, the number of parts is less, simple structure, lower manufacturing cost. In actual assembly process, first multiple core wires are passed through rubber piece, then integrated molding is formed by vulcanization process, then joint piece is sleeved on rubber piece, and the end of joint piece is stopped in stop portion, and installation can be completed. Compared with prior art, the assembly process of the gas meter terminal post assembly of the embodiment is very simple, the rework rate is lower, and the manufacturing yield and manufacturing efficiency are higher.

The application provides a lower plastic, an end cover assembly, an energy storage device and an electric equipment, which can improve the yield of the lower plastic, help to improve the production efficiency of the energy storage device, ensure that the overall structural strength of the lower plastic is large, avoid deformation of the lower plastic, and ensure good use reliability of the energy storage device. The lower plastic comprises a first lower plastic and a second lower plastic, and the first lower plastic and the second lower plastic are arranged in sequence along the length direction of the lower plastic, wherein the length l1 of the first lower plastic is greater than the length l2 of the second lower plastic, one end of the second lower plastic towards the first lower plastic is provided with an extension part, the extension part is located on one side of the thickness direction of the first lower plastic, and the extension part supports the first lower plastic.

This invention provides a vertical high-voltage light-emitting diode (LED) chip and its fabrication method. The vertical high-voltage LED chip includes a conductive silicon substrate; a bonding metal layer disposed above the conductive silicon substrate; an epitaxial layer disposed above the bonding metal layer, the epitaxial layer comprising, from bottom to top, a P-type GaN layer, an active light-emitting layer, and an N-type GaN layer; a segmentation channel structure within the epitaxial layer, dividing the epitaxial layer into several independently driveable epitaxial layer units; the segmentation channel structure is composed of a first segmentation channel and a second segmentation channel, with their projection centers coinciding and penetrating the entire epitaxial layer; wherein the width of the first segmentation channel is greater than the width of the second segmentation channel, and the depth of the first segmentation channel is less than the depth of the second segmentation channel; a conductive metal layer is disposed between the epitaxial layer and the bonding metal layer, and a P-type pad layer, significantly improving the chip fabrication yield.

This application relates to a method for manufacturing a glass substrate, a glass substrate, and a packaging structure. The method includes forming a through-hole on a glass core plate, the through-hole including a first hole segment and a second hole segment that are interconnected. From a first surface to a second surface, the diameter of the first hole segment gradually decreases, and the diameter of the second hole segment gradually increases. A buffer material is filled into the through-hole. The buffer material is etched from the side of the glass core plate near the first surface to remove the buffer material in the first hole segment, and a first through-hole is formed in the buffer material in the second hole segment. Buffer material is filled into the first hole segment and the first through-hole. The buffer material is etched from the side of the glass core plate near the second surface to remove the buffer material in the first through-hole, and a second through-hole is formed in the buffer material in the first hole segment. The second through-hole communicates with the first through-hole to form a conductive hole. A conductive structure is formed within the conductive hole, and the buffer material is disposed around the conductive structure.

This invention discloses a printed circuit structure comprising a printed circuit layer and a printed conductive adhesive layer. The printed circuit layer includes a first printed circuit layer and a second printed circuit layer. One of the first basic circuit wiring segments of the first printed circuit layer and the first basic circuit wiring segment of the first printed conductive adhesive layer extends along a first direction, and the other extends along a second direction perpendicular to the first direction. The difference in length between the two in the first direction allows the first printed circuit layer and the first printed conductive adhesive layer to maintain electrical connection even when there is an error in the first direction. Similarly, the second basic circuit wiring segments of the second printed circuit layer and the second basic circuit wiring segment of the second printed conductive adhesive layer also maintain electrical connection even when there is an error in the first direction. This invention, through structural improvements, prevents the conductive adhesive layer from failing to adhere to the printed circuit layer due to errors.

Embodiments of the present disclosure provide a semiconductor structure and a forming method thereof. The method comprises: providing a substrate, a surface of the substrate is formed with first interval layers arranged at intervals along a first direction and extending along a second direction, the first interval layers comprising first mask layers and first sidewall layers located on both sides of the first mask layers along the first direction; forming first sacrificial layers in gaps between the first interval layers; wherein surfaces of the first interval layers and the first sacrificial layers are flush; the first mask layers, the first sidewall layers and the first sacrificial layers constitute a first pattern layer; forming a second pattern layer on a surface of the first pattern layer; the second pattern layer comprises at least second sidewall layers arranged at intervals along the first direction and extending along a third direction; the first direction, the second direction and the third direction are any three directions in a plane of the substrate; transferring an initial pattern defined by the second sidewall layers and the first sidewall layers into the substrate.

The utility model embodiment belongs to electronic equipment connection technical field, disclose a kind of connector. Connector includes plug-in board, support and inner cladding, plug-in board includes plug-in board body and the multiple plugging heads connected to one end of plug-in board body, when plug-in board body abuts on support, multiple plugging heads are embedded in the multiple assembly slots of support one by one, inner cladding is cladded on the side where assembly slot of support, support has assembly face;At least two plugging heads are sequentially arranged along first direction, the embedded direction of plugging head and assembly slot is second direction, assembly face is parallel to the plane formed by first direction and second direction, one side of plug-in board body is configured to abut on the assembly face of support, the other side is provided with enclosing platform, enclosing platform is used to isolate assembly slot and inner cladding. The connector can avoid the inner cladding in molten state to form the flash phenomenon by flowing into the joint between assembly slot and plugging head during injection molding, thereby improving the manufacturing yield of the connector.