153results about How to "Reduce non-radiative recombination" patented technology

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first dielectric layer, and a first electrode. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The first dielectric layer is disposed on the second type semiconductor layer. The first dielectric layer has at least one opening therein to expose at least one part of the second type semiconductor layer. A first shortest distance between an edge of the opening of the first dielectric layer and a side surface of the second type semiconductor layer is greater than or equal to 1 μm. The first electrode is partially disposed on the first dielectric layer and is electrically coupled with the exposed part of the second type semiconductor layer through the opening of the first dielectric layer.

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

The invention provides a silicon-based germanium laser device and a method for manufacturing the same. The silicon-based germanium laser device comprises a silicon material, a germanium layer, a p-type doped region, an n-type doped region, an insulating dielectric layer, a p electrode and an n electrode; the silicon material is provide with corresponding crystal orientation; the germanium layer epitaxially grows on the silicon material and comprises a germanium ridge waveguide, the germanium layer is etched to form the germanium ridge waveguide, and the germanium ridge waveguide forms all or partial laser resonant cavities; the p-type doped region and the n-type doped region are positioned on two sides of the germanium ridge waveguide; the p-type doped region, the germanium ridge waveguide and the n-type doped region form a transverse p-i-n diode structure; the insulating dielectric layer is formed above the germanium ridge waveguide, the p-type doped region, the n-type doped region; the p electrode and the n electrode are formed above the insulating dielectric layer and are respectively electrically connected with the p-type doped region and the n-type doped region. The silicon-based germanium laser device and the method have the advantages that the silicon-based germanium laser device is of a horizontal transverse p-i-n germanium ridge waveguide structure, a silicon substrate does not need to be doped, the crystal quality of the germanium layer which epitaxially grows on the silicon substrate can be high, and accordingly the integral performance of the silicon-base germanium laser device can be improved advantageously.

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

The invention discloses a method for passivating a cavity surface of a GaAs-based semiconductor laser, and the method comprises the following steps of putting a cleaved laser bar into solution of sulphuret of ammonia to be immersed, carrying out passivation on the laser bar and depositing a sulfur passivation layer on a front cavity surface and a back cavity surface of the laser bar; washing the bar by deionized water, dehydrating by acetone and isopropanol and blow-drying by nitrogen, installing a film plating frame and putting into an MOCVD instrument; vacuumizing the MOCVD instrument, baking to heat and introducing protective gas; increasing the temperature of a substrate, sublimating an amorphous sulfur layer in the sulfur passivation layer, introducing a growth source, and epitaxial-growing a layer of ZnSe passivation protective film on the sulfur passivation layer; and after cooling, taking out the film plating frame and putting into a plating machine, and plating anti-reflection film and high-reflection film on the passivation protective film of the laser bar. The method removes an oxide layer and a surface state on the cavity surface effectively and reduces the damage on the cavity surface.

The invention relates to a structure and a preparation method of a surface electric field enhanced PIN photoelectric detector, and belongs to photoelectric detectors. The PIN photoelectric detector is characterized in that a p-type heavily doped region 106 is selectively added in a single p-type lightly doped region 105 which originally covers the whole photosensitive surface, the p-type heavily doped region 106 is enabled to be connected with a p-type ohmic contact layer, thereby enabling a longitudinal electric field to be enhanced, improving the response speed of the detector, introducing a transverse electric field at the same time, increasing transport channels of photoproduction holes, reducing the transport resistance, reducing nonradiative recombination when the photoproduction holes are transported to an electrode in the p-type lightly doped region 105, improving the collection efficiency of the photoproduction holes, and then effectively improving the quantum efficiency. The structural design and the preparation process provided by the invention of the surface electric field enhanced PIN photoelectric detector solve a problem that a photoelectric detector with a traditional structure is low in collection efficiency for photoproduction carriers, and improve the spectral response of devices.

The invention discloses an epitaxial structure of a nitride LED. The epitaxial structure is configured such that: a composite structure of a passivation layer/DBR/AI quantum dot is filled above a V-pits of a multi-quantum well, and the passivation layer blocks the dispersion of electrons and cavities to the V-pits, and nonradioactive recombination of defect in the V-pits is reduced, while the DBR reflects the light emitted by the quantum well so as to prevent the light from being absorbed by the defect in the V-pits. At the same time, an A1 quantum dot forms light reflection and surface plasmon, and further guides optical waveguide direction. The epitaxial structure, through multiple accumulation effect of the composite structure of the passivation layer/DBR/AI quantum dot, increases the efficiency of the quantum dot in light emission.

The present invention discloses a nitride light emitting diode with AIN quantum dots and a manufacturing method thereof. The nitride light emitting diode comprises a substrate, a buffer layer, an N-type nitride, multiple quantum wells with V-pits, P-type nitride, AIN quantum dots without Mg doping and P-type nitride and P-type contact layer with high Mg doping, an AIN quantum dot layer is inserted between the P-type nitride and the P-type nitride with high Mg doping, and the quantum dots uniformly block the terminal of a dislocation line through a multistep relaxation deposition method with high-resistance AIN quantum dots. The nitride light emitting diode with AIN quantum dots and the manufacturing method thereof are able to prevent current from flowing the dislocation line area, improve the backward voltage, reduce the electric leakage and improve the current lateral extension and ESD.

The invention discloses a blue-light perovskite light-emitting diode and a preparation method thereof. The structure of the blue-light perovskite light-emitting diode sequentially comprises a substrate, an anode, a hole transport layer, a light-emitting layer, a passivation layer, an electron transport layer, an electron injection layer and a cathode from bottom to top, wherein the light-emitting layer is a perovskite thin film prepared from a perovskite precursor solution; when the blue-light perovskite light-emitting diode is prepared, a perovskite thin film is prepared through a perovskite precursor solution added with a thiocyanate additive, so that the thin film morphology of a light-emitting layer is adjusted through the thiocyanate additive; and after the perovskite thin film is prepared, the perovskite thin film is subjected to passivation treatment, so that the performance of the perovskite thin film is improved. The perovskite thin film is prepared based on the additive engineering of the perovskite precursor solution added with the thiocyanate additive, and the surface passivation treatment is utilized, so that the surface defects of the thin film are further reduced, and the light-emitting performance of the blue-light perovskite light-emitting diode is improved.

The invention discloses a green-ray LED structure with a component gradual-change buffering layer. The green-ray LED structure comprises a sapphire substrate layer, a GaN nucleating layer, an undoped GaN layer, a high-temperature n-type GaN layer, an InxGa1-xN/GaN multi-quantum-well layer and a p-type GaN layer, and is characterized in that the low-temperature component gradual-change n-type InyGa1-yN buffering layer is arranged between the high-temperature n-type GaN layer and the InxGa1-xN/GaN multi-quantum-well layer. As the stress borne by the InGaN multi-quantum-well light emitting layer can be buffered through the arrangement of the buffering layer, the crystalline quality of the quantum-well structure layer is improved, non-radiative recombination is reduced, and the light emitting efficiency of green-ray LEDs is improved.

The invention discloses an LED epitaxial structure and preparation method thereof, the LED epitaxial structure comprises a substrate, an AlN buffer layer, a uGaN layer, an N-type GaN layer, a multi-quantum well light emitting layer, an AlInGaN/AlN superlattice diffusion barrier layer, a P-type hole injection layer and a P-type GaN layer in sequence from bottom to top. As the AlInGaN/AlN superlattice diffusion barrier layer is introduced between the multi-quantum well light emitting layer and the P-type hole injection layer, the P-type doping diffusion can be blocked, the energy level of the conduction band caused by the bending of the energy band can be reduced, the non-radiation recombination of the quantum wells can be reduced, and the effect of the quantum efficiency in the quantum wells can be improved so as to improve the luminous efficiency.

The invention relates to a chelated perovskite material, a film, a device, and a preparation method and application thereof. The catalyst is prepared by adding a chelating agent into a perovskite solution, wherein the chelating agent comprises a complexing agent or chelating agent capable of generating coordination with metal ions by coordination atoms, or a chelate or complex formed by coordination reaction of the complexing agent or chelating agent and the corresponding metal ions; according to the material, body defects and surface defects of the perovskite thin film are effectively passivated, and non-radiative recombination of carriers is reduced, so that the efficiency and long-term operation stability of the perovskite solar cell are effectively improved.

The invention discloses a GaN-based LED epitaxial structure having an asymmetric super-lattice layer and a preparation method for the same. The GaN-based LED epitaxial structure comprises a substrate, a nitride buffer layer, an N-type GaN layer, a quantum well layer, the asymmetric super-lattice layer and a P-type GaN layer which are sequentially arranged from bottom to top. The asymmetric super-lattice layer is composed of multiple AlxInyGa(1-x-y)N/GaN super-lattice layer units which are sequentially stacked, the total thickness of an AlxInyGa(1-x-y)N layer and a GaN layer in each different period is the same, the thicknesses of the AlxInyGa(1-x-y)N layers gradually decrease as the number of circles changes, and the thicknesses of the GaN layers increase as the number of circles changes. According to the invention, the asymmetric super-lattice layer reduces the limitation on cavity vertical migration and improves the cavity injection efficiency, the AlxInyGa(1-x-y)N layers whose thicknesses progressively change can gradually assist cavities in expanding laterally in a ladder pattern manner, so that the overall luminescence efficiency of an LED device can be improved.

A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment, the semiconductor laser diode includes a semiconductor layer sequence having an active zone, wherein the semiconductor layer sequence has a cylindrical shape, wherein a cylinder axis of the semiconductor layer sequence is perpendicular to a layer plane of the semiconductor layer sequence, and wherein the semiconductor laser diode is configured to emit radiation perpendicularly to the cylinder axis of the semiconductor layer sequence.