153results about How to "Reduce non-radiative recombination" patented technology

The disclosed technology relates generally hybrid displays with pixels that include both inorganic light emitting diodes (ILEDs) and organic light emitting diodes (OLEDs). The disclosed technology provides a hybrid display that uses a mixture of ILEDs and OLEDs in each pixel. In certain embodiments, each pixel in the hybrid display includes a red ILED, a blue ILED, and a green OLED. In this instance, the OLED process would not require a high resolution shadow mask, thereby enhancing the manufacturability of OLEDs for larger format displays. Additionally, the OLED process in this example would not require any fine lithography. The OLED subpixel (e.g., green subpixel) can be larger and the ILEDs can be small (e.g., micro-red and micro-blue ILEDs). The use of small ILEDs allows for other functions to be added to the pixel, such as micro sensors and micro integrated circuits.

The disclosed technology relates generally hybrid displays with pixels that include both inorganic light emitting diodes (ILEDs) and organic light emitting diodes (OLEDs). The disclosed technology provides a hybrid display that uses a mixture of ILEDs and OLEDs in each pixel. In certain embodiments, each pixel in the hybrid display includes a red ILED, a blue ILED, and a green OLED. In this instance, the OLED process would not require a high resolution shadow mask, thereby enhancing the manufacturability of OLEDs for larger format displays. Additionally, the OLED process in this example would not require any fine lithography. The OLED subpixel (e.g., green subpixel) can be larger and the ILEDs can be small (e.g., micro-red and micro-blue ILEDs). The use of small ILEDs allows for other functions to be added to the pixel, such as micro sensors and micro integrated circuits.

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first dielectric layer, and a first electrode. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The first dielectric layer is disposed on the second type semiconductor layer. The first dielectric layer has at least one opening therein to expose at least one part of the second type semiconductor layer. A first shortest distance between an edge of the opening of the first dielectric layer and a side surface of the second type semiconductor layer is greater than or equal to 1 μm. The first electrode is partially disposed on the first dielectric layer and is electrically coupled with the exposed part of the second type semiconductor layer through the opening of the first dielectric layer.

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and an array of nanostructures interposed between the substrate and the transparent electrode. Each of the nanostructures comprises a core nanorod, and a nano shell surrounding the core nanorod. The core nanorod is formed substantially perpendicularly to the substrate and includes a first nanorod of a first conductivity type, an (AlxInyGa1-x-y)N (where, 0≦x≦1, 0≦y≦1 and 0≦x+y≦1) quantum well, and a second nanorod of a second conductivity type, which are joined in a longitudinal direction. The nano shell is formed of a material with a bandgap greater than that of the quantum well, and surrounds at least the quantum well of the core nanorod. Meanwhile, the second nanorods are connected in common to the transparent electrode. Accordingly, with the nano shells, it is possible to provide a light emitting diode capable of improving external quantum efficiency by preventing non-radiative recombination on a surface of the (AlxInyGa1-x-y)N quantum well.

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

The invention provides a QLED containing a noble metal nanomaterial. The QLED comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, an electron injection layer and a cathode which are sequentially stacked, wherein the QLED contains the noble metal nanomaterial; the noble metal nanomaterial is a nano noble metal core-shell structure composite material and comprises a noble metal core and a shell layer structure coating the noble metal core; and at least one of the hole injection layer, the hole transport layer, the quantum dot light-emitting layer, the electron transport layer and the electron injection layer is doped with the nano noble metal core-shell structure composite material; or the nano noble metal core-shell structure composite material is arranged between any two adjacent layers of structures of the hole injection layer, the hole transport layer, the quantum dot light-emitting layer, the electron transport layer and the electron injection layer as a nano noble metal core-shell layer.

The invention provides a silicon-based germanium laser device and a method for manufacturing the same. The silicon-based germanium laser device comprises a silicon material, a germanium layer, a p-type doped region, an n-type doped region, an insulating dielectric layer, a p electrode and an n electrode; the silicon material is provide with corresponding crystal orientation; the germanium layer epitaxially grows on the silicon material and comprises a germanium ridge waveguide, the germanium layer is etched to form the germanium ridge waveguide, and the germanium ridge waveguide forms all or partial laser resonant cavities; the p-type doped region and the n-type doped region are positioned on two sides of the germanium ridge waveguide; the p-type doped region, the germanium ridge waveguide and the n-type doped region form a transverse p-i-n diode structure; the insulating dielectric layer is formed above the germanium ridge waveguide, the p-type doped region, the n-type doped region; the p electrode and the n electrode are formed above the insulating dielectric layer and are respectively electrically connected with the p-type doped region and the n-type doped region. The silicon-based germanium laser device and the method have the advantages that the silicon-based germanium laser device is of a horizontal transverse p-i-n germanium ridge waveguide structure, a silicon substrate does not need to be doped, the crystal quality of the germanium layer which epitaxially grows on the silicon substrate can be high, and accordingly the integral performance of the silicon-base germanium laser device can be improved advantageously.

The invention discloses a novel passivated perovskite solar cell and a preparation method thereof. The perovskite solar cell optimizes the absorption of perovskite, so that a perovskite absorption layer contains an anti-solvent tris(pentafluorophenyl)borane to serve as a novel additive. On one hand, the addition of fluoride ions can change the crystallinity and the defect state of a perovskite film to form a high-quality perovskite film with a large grain size; the anti-solvent tris(pentafluorophenyl)borane can enhance the surface appearance of the perovskite and plays a passivation function at the grain boundary; and on the other hand, the fluoride ions can improve the hydrophobicity of the perovskite film and inhibit the phase change of the perovskite to better protect the perovskite from being destroyed by water, thereby further improving the air stability and the light stability of the cell to obtain a high-efficiency perovskite solar cell.

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

The invention discloses a method for passivating a cavity surface of a GaAs-based semiconductor laser, and the method comprises the following steps of putting a cleaved laser bar into solution of sulphuret of ammonia to be immersed, carrying out passivation on the laser bar and depositing a sulfur passivation layer on a front cavity surface and a back cavity surface of the laser bar; washing the bar by deionized water, dehydrating by acetone and isopropanol and blow-drying by nitrogen, installing a film plating frame and putting into an MOCVD instrument; vacuumizing the MOCVD instrument, baking to heat and introducing protective gas; increasing the temperature of a substrate, sublimating an amorphous sulfur layer in the sulfur passivation layer, introducing a growth source, and epitaxial-growing a layer of ZnSe passivation protective film on the sulfur passivation layer; and after cooling, taking out the film plating frame and putting into a plating machine, and plating anti-reflection film and high-reflection film on the passivation protective film of the laser bar. The method removes an oxide layer and a surface state on the cavity surface effectively and reduces the damage on the cavity surface.

The invention discloses a P-type epitaxial layer of an LED, a manufacturing method thereof and an LED epitaxial wafer comprising thereof. The P-type epitaxial layer comprises a quantum well protection layer which is arranged on a quantum well layer of the LED, wherein the quantum well protection layer is formed by AlGaN / InGaN superlattice; a low-temperature P-type GaN layer which is arranged on the quantum well protection layer; a low-temperature electron barrier layer which is arranged on the low-temperature P-type GaN layer and is formed by P-type AlInGaN; a high-temperature electron barrier layer which is arranged on the low-temperature electron barrier layer and is formed by P-type AlGaN / P-type InGaN superlattice; and a high-temperature P-type GaN layer which is arranged on the high-temperature electron barrier layer. The high temperature growth process of the P-type epitaxial layer causes less damage to the quantum well layer, and nonradiative recombination happening between the electrons entering the P-type epitaxial layer from the quantum well layer and holes in the P-type epitaxial layer is allowed to be reduced, thereby improving the luminous efficiency of the LED.

The invention relates to a low cost LED with two-dimensional photonic crystals, and aims to solve the problem that the light-emitting efficiency is low and high production cost, and the problem that non-radiative recombination increases because a semiconductor active layer is damaged by adopting the conventional etching, photo-etching or imprinting technique in the conventional LED. The LED comprises a substrate, a buffer layer, an N-type doped semiconductor layer, an active layer, a P-type doped semiconductor layer, a current diffusing layer, a P-type electrode and an N-type electrode, wherein two-dimensional photonic crystal layers are covered on the interface between the N-type doped semiconductor layer and the air and the interface between the P-type doped semiconductor layer and the air; and the two-dimensional photonic crystal layer adopts a single-layer micro-sphere ordered arrangement structure, and the grain size of the micro-spheres is 50nm to 5 mu m. In the LED, by using the two-dimensional photonic crystal layer, a refraction index difference between the semiconductor and the outside is improved; and by utilizing the weak photonic crystal effect, a light-emitting efficiency is improved by 10 to 20 percent compared with that of the conventional LED. The LED of the invention is suitable for large-area and industrialized production.

The invention relates to a structure and a preparation method of a surface electric field enhanced PIN photoelectric detector, and belongs to photoelectric detectors. The PIN photoelectric detector is characterized in that a p-type heavily doped region 106 is selectively added in a single p-type lightly doped region 105 which originally covers the whole photosensitive surface, the p-type heavily doped region 106 is enabled to be connected with a p-type ohmic contact layer, thereby enabling a longitudinal electric field to be enhanced, improving the response speed of the detector, introducing a transverse electric field at the same time, increasing transport channels of photoproduction holes, reducing the transport resistance, reducing nonradiative recombination when the photoproduction holes are transported to an electrode in the p-type lightly doped region 105, improving the collection efficiency of the photoproduction holes, and then effectively improving the quantum efficiency. The structural design and the preparation process provided by the invention of the surface electric field enhanced PIN photoelectric detector solve a problem that a photoelectric detector with a traditional structure is low in collection efficiency for photoproduction carriers, and improve the spectral response of devices.

Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and an array of nanostructures interposed between the substrate and the transparent electrode. Each of the nanostructures comprises a core nanorod, and a nano shell surrounding the core nanorod. The core nanorod is formed substantially perpendicularly to the substrate and includes a first nanorod of a first conductivity type, an (AlxInyGa1-x-y)N (where, 0≦x<1, 0≦y≦1 and 0≦x+y≦1) quantum well, and a second nanorod of a second conductivity type, which are joined in a longitudinal direction. The nano shell is formed of a material with a bandgap greater than that of the quantum well, and surrounds at least the quantum well of the core nanorod. Meanwhile, the second nanorods are connected in common to the transparent electrode. Accordingly, with the nano shells, it is possible to provide a light emitting diode capable of improving external quantum efficiency by preventing non-radiative recombination on a surface of the (AlxInyGa1-x-y)N quantum well.

The invention discloses a perovskite quantum dot solar cell and a preparation method thereof. The perovskite quantum dot solar cell comprises a conductive glass substrate, an electron transport layer,a light absorbing layer, a hole transport layer, and a metal anode. The light absorbing layer is a CusPbI3, CsPbBr3 or CsPbBrxI3-x (0<X<3) quantum dot film of a cubic phase perovskite structure modified by a cesium salt. The method for modifying the perovskite quantum dot film by using the cesium salt is simple, highly efficient and reproducible, can passivate the defects on the surface of the perovskite quantum dot, reduces the nonradiative recombination pathway of the perovskite quantum dot, greatly improves the charge transport ability in the quantum dot film, thereby improving the photoelectric conversion efficiency and the environmental stability of the corresponding perovskite quantum dot solar cell. The perovskite quantum dot solar cell provided by the invention has excellent efficiency and good stability.

The invention discloses an epitaxial structure of a nitride LED. The epitaxial structure is configured such that: a composite structure of a passivation layer / DBR / AI quantum dot is filled above a V-pits of a multi-quantum well, and the passivation layer blocks the dispersion of electrons and cavities to the V-pits, and nonradioactive recombination of defect in the V-pits is reduced, while the DBR reflects the light emitted by the quantum well so as to prevent the light from being absorbed by the defect in the V-pits. At the same time, an A1 quantum dot forms light reflection and surface plasmon, and further guides optical waveguide direction. The epitaxial structure, through multiple accumulation effect of the composite structure of the passivation layer / DBR / AI quantum dot, increases the efficiency of the quantum dot in light emission.

The invention discloses a transistor laser, and a manufacturing method thereof. The method includes the following steps: a substrate is selected; a buffer layer, a lower collector layer, a collector layer, a base layer and a current blocking layer are grown in sequence; part of current blocking layer materials are selectively etched; an active layer, an emitter layer and a contact layer are grown; an emitter ridge waveguide is etched until reaching the current blocking layer; the current blocking layer between base layer materials of the device and active layer materials of the device can serve as an emitter waveguide etching stop layer, so as to achieve high-precision control of the waveguide height. The current blocking layer materials below the emitter ridge waveguide are selectively etched, so as to limit lateral diffusion of carriers, and help reduce non-radiative recombination of the carriers on the side wall of an active area. These measures can remarkably improve the performances of the device.

The invention discloses a perovskite type solar cell based on cooperative post-processing of multiple ammonium salts and a preparation method thereof, a perovskite layer as a light absorption active layer is processed by a mixed solution of multiple ammonium salts after film formation, and non-radiative recombination in a thin film is inhibited in a passivation mode through the cooperative diffusion effect of the added various ammonium salts; and meanwhile, the distribution of different types of ammonium salts after permeation in the thin film also shows different gradient distribution, so that gradient optimization of the energy band structure of the thin film is realized, defect passivation of different gradients is realized, non-radiative recombination of photon-generated carriers is reduced, and finally, the open-circuit voltage and the filling factor of the device are improved. The perovskite solar cell which is subjected to aftertreatment through multiple ammonium salt mixed solutions has relatively high photoelectric conversion efficiency and good stability.

The invention discloses a resonant cavity microarray high-efficiency light emitting diode chip, which belongs to the field of semiconductor photoelectrons. The resonant cavity microarray high-efficiency light emitting diode chip comprises a transparent conductive layer ITO, a SiO2 isolation layer, an upper Bragg reflector, a resonant cavity, a lower Bragg reflector, a current expansion upper electrode, a substrate, a lower electrode and a lateral oxide layer located above the resonant cavity. The resonant cavity contains an optical radiation active region. The upper Bragg reflector is composedof low-refractive-index material layers and high-refractive-index material layers which are alternately arranged, and the thicknesses of the low-refractive-index material layers and the high-refractive-index material layers are 1 / 4 of the wavelength of incident light. The lower Bragg reflector is composed of low-refractive-index material layers and high-refractive-index material layers which arealternately arranged, and the thicknesses of the low-refractive-index material layers and the high-refractive-index material layers are 1 / 4 of the wavelength of incident light. The light extraction efficiency of the light from the upper surface of the chip is improved, and the light emitted from the side wall can be effectively extracted, so that the light extraction efficiency is improved, the external quantum efficiency is improved, and the resonant cavity microarray high-efficiency light emitting diode chip is realized.

The present invention discloses a nitride light emitting diode with AIN quantum dots and a manufacturing method thereof. The nitride light emitting diode comprises a substrate, a buffer layer, an N-type nitride, multiple quantum wells with V-pits, P-type nitride, AIN quantum dots without Mg doping and P-type nitride and P-type contact layer with high Mg doping, an AIN quantum dot layer is inserted between the P-type nitride and the P-type nitride with high Mg doping, and the quantum dots uniformly block the terminal of a dislocation line through a multistep relaxation deposition method with high-resistance AIN quantum dots. The nitride light emitting diode with AIN quantum dots and the manufacturing method thereof are able to prevent current from flowing the dislocation line area, improve the backward voltage, reduce the electric leakage and improve the current lateral extension and ESD.

The invention discloses a blue-light perovskite light-emitting diode and a preparation method thereof. The structure of the blue-light perovskite light-emitting diode sequentially comprises a substrate, an anode, a hole transport layer, a light-emitting layer, a passivation layer, an electron transport layer, an electron injection layer and a cathode from bottom to top, wherein the light-emitting layer is a perovskite thin film prepared from a perovskite precursor solution; when the blue-light perovskite light-emitting diode is prepared, a perovskite thin film is prepared through a perovskite precursor solution added with a thiocyanate additive, so that the thin film morphology of a light-emitting layer is adjusted through the thiocyanate additive; and after the perovskite thin film is prepared, the perovskite thin film is subjected to passivation treatment, so that the performance of the perovskite thin film is improved. The perovskite thin film is prepared based on the additive engineering of the perovskite precursor solution added with the thiocyanate additive, and the surface passivation treatment is utilized, so that the surface defects of the thin film are further reduced, and the light-emitting performance of the blue-light perovskite light-emitting diode is improved.

The invention discloses a green-ray LED structure with a component gradual-change buffering layer. The green-ray LED structure comprises a sapphire substrate layer, a GaN nucleating layer, an undoped GaN layer, a high-temperature n-type GaN layer, an InxGa1-xN / GaN multi-quantum-well layer and a p-type GaN layer, and is characterized in that the low-temperature component gradual-change n-type InyGa1-yN buffering layer is arranged between the high-temperature n-type GaN layer and the InxGa1-xN / GaN multi-quantum-well layer. As the stress borne by the InGaN multi-quantum-well light emitting layer can be buffered through the arrangement of the buffering layer, the crystalline quality of the quantum-well structure layer is improved, non-radiative recombination is reduced, and the light emitting efficiency of green-ray LEDs is improved.

The invention discloses an LED epitaxial structure and preparation method thereof, the LED epitaxial structure comprises a substrate, an AlN buffer layer, a uGaN layer, an N-type GaN layer, a multi-quantum well light emitting layer, an AlInGaN / AlN superlattice diffusion barrier layer, a P-type hole injection layer and a P-type GaN layer in sequence from bottom to top. As the AlInGaN / AlN superlattice diffusion barrier layer is introduced between the multi-quantum well light emitting layer and the P-type hole injection layer, the P-type doping diffusion can be blocked, the energy level of the conduction band caused by the bending of the energy band can be reduced, the non-radiation recombination of the quantum wells can be reduced, and the effect of the quantum efficiency in the quantum wells can be improved so as to improve the luminous efficiency.

The invention provides an efficient perovskite solar cell modified by double interface layers. The efficient perovskite solar cell comprises transparent conductive glass, an electron transport layer, a perovskite absorption layer, a PMAI layer, CsPbBr3 quantum dots, a hole transport layer and a metal electrode which are sequentially arranged. The preparation method of the PMAI layer and the CsPbBr3 quantum dots comprises the following steps of: spin-coating a perovskite absorption layer with a PMAI solution of which the solvent is isopropanol and the concentration is 1-15 mg / mL to obtain the PMAI layer; and spin-coating the PMAI layer with a CsPbBr3 quantum dot solution of which the solvent is chlorobenzene and the concentration is 2-10 mg / mL, so as to obtain the CsPbBr3 quantum dots. According to the perovskite solar cell, the PMAI layer and the CsPbBr3 quantum dots are adopted as double interface layers to modify the perovskite absorption layer, the charge transmission performance of the interface is jointly improved through the synergistic effect of the PMAI layer and the CsPbBr3 quantum dots, and the efficient perovskite solar cell is achieved.

The invention relates to a chelated perovskite material, a film, a device, and a preparation method and application thereof. The catalyst is prepared by adding a chelating agent into a perovskite solution, wherein the chelating agent comprises a complexing agent or chelating agent capable of generating coordination with metal ions by coordination atoms, or a chelate or complex formed by coordination reaction of the complexing agent or chelating agent and the corresponding metal ions; according to the material, body defects and surface defects of the perovskite thin film are effectively passivated, and non-radiative recombination of carriers is reduced, so that the efficiency and long-term operation stability of the perovskite solar cell are effectively improved.

The invention discloses a GaN-based LED epitaxial structure having an asymmetric super-lattice layer and a preparation method for the same. The GaN-based LED epitaxial structure comprises a substrate, a nitride buffer layer, an N-type GaN layer, a quantum well layer, the asymmetric super-lattice layer and a P-type GaN layer which are sequentially arranged from bottom to top. The asymmetric super-lattice layer is composed of multiple AlxInyGa(1-x-y)N / GaN super-lattice layer units which are sequentially stacked, the total thickness of an AlxInyGa(1-x-y)N layer and a GaN layer in each different period is the same, the thicknesses of the AlxInyGa(1-x-y)N layers gradually decrease as the number of circles changes, and the thicknesses of the GaN layers increase as the number of circles changes. According to the invention, the asymmetric super-lattice layer reduces the limitation on cavity vertical migration and improves the cavity injection efficiency, the AlxInyGa(1-x-y)N layers whose thicknesses progressively change can gradually assist cavities in expanding laterally in a ladder pattern manner, so that the overall luminescence efficiency of an LED device can be improved.

A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment, the semiconductor laser diode includes a semiconductor layer sequence having an active zone, wherein the semiconductor layer sequence has a cylindrical shape, wherein a cylinder axis of the semiconductor layer sequence is perpendicular to a layer plane of the semiconductor layer sequence, and wherein the semiconductor laser diode is configured to emit radiation perpendicularly to the cylinder axis of the semiconductor layer sequence.