The invention discloses a
resonant cavity microarray high-efficiency
light emitting diode chip, which belongs to the field of
semiconductor photoelectrons. The
resonant cavity microarray high-efficiency
light emitting diode chip comprises a transparent conductive layer ITO, a SiO2
isolation layer, an upper Bragg reflector, a
resonant cavity, a lower Bragg reflector, a current expansion upper
electrode, a substrate, a lower
electrode and a lateral
oxide layer located above the resonant cavity. The resonant cavity contains an
optical radiation active region. The upper Bragg reflector is composedof low-refractive-index material
layers and high-refractive-index material
layers which are alternately arranged, and the thicknesses of the low-refractive-index material
layers and the high-refractive-index material layers are 1 / 4 of the
wavelength of incident light. The lower Bragg reflector is composed of low-refractive-index material layers and high-refractive-index material layers which arealternately arranged, and the thicknesses of the low-refractive-index material layers and the high-refractive-index material layers are 1 / 4 of the
wavelength of incident light. The light extraction efficiency of the light from the upper surface of the
chip is improved, and the light emitted from the side wall can be effectively extracted, so that the light extraction efficiency is improved, the external
quantum efficiency is improved, and the resonant cavity
microarray high-efficiency
light emitting diode chip is realized.