Epitaxial structure of nitride LED

A technology of light-emitting diodes and epitaxial structures, which is applied in the fields of nanotechnology, electrical components, nanotechnology, etc. for materials and surface science, and can solve problems such as reducing luminous efficiency, luminous intensity, ESD, and electron leakage.

Active Publication Date: 2016-09-07
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

Because there are defects in the bottom layer of the nitride light-emitting diode, when the quantum well is grown, the defect extension will form V-pits, forming a non-radiative recombination center, causing elec

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  • Epitaxial structure of nitride LED
  • Epitaxial structure of nitride LED

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Embodiment Construction

[0013] In traditional nitride light-emitting diodes, defects will be formed during the nitride growth process due to lattice mismatch and thermal mismatch. When growing multiple quantum wells, the dislocations will extend to form V-pits, and the V-pits form non-radiative recombination The center causes electrons to easily leak and absorb light through the leakage channel of V-pits, forming leakage and non-radiative recombination, reducing luminous intensity and ESD.

[0014] In order to solve the problem of light absorption of defects in V-pits and the formation of non-radiative recombination centers, the present invention proposes an epitaxial structure of a nitride light-emitting diode, such as figure 1 As shown, it includes: substrate 100, buffer layer 101, N-type nitride 102, multiple quantum wells 103, V-pits 104, passivation layer (105) / DBR (106) / Al quantum dot (107) compound structure, P-type nitride 108 , P-type contact layer 109 and DBR 110 .

[0015] First, use meta...

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Abstract

The invention discloses an epitaxial structure of a nitride LED. The epitaxial structure is configured such that: a composite structure of a passivation layer/DBR/AI quantum dot is filled above a V-pits of a multi-quantum well, and the passivation layer blocks the dispersion of electrons and cavities to the V-pits, and nonradioactive recombination of defect in the V-pits is reduced, while the DBR reflects the light emitted by the quantum well so as to prevent the light from being absorbed by the defect in the V-pits. At the same time, an A1 quantum dot forms light reflection and surface plasmon, and further guides optical waveguide direction. The epitaxial structure, through multiple accumulation effect of the composite structure of the passivation layer/DBR/AI quantum dot, increases the efficiency of the quantum dot in light emission.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to an epitaxial structure of a nitride light-emitting diode. Background technique [0002] Nowadays, light-emitting diodes (LEDs), especially nitride light-emitting diodes, have been widely used in the field of general lighting due to their high luminous efficiency. Because there are defects in the bottom layer of the nitride light-emitting diode, when the quantum well is grown, the defect extension will form V-pits, forming a non-radiative recombination center, causing electrons to easily leak through the leakage channel of V-pits and absorb the light emitted by the quantum well, forming leakage Recombined with non-radiative, reducing luminous efficiency, luminous intensity and ESD. Contents of the invention [0003] The purpose of the present invention is to provide an epitaxial structure of a nitride light-emitting diode, by filling the composite structure o...

Claims

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Application Information

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IPC IPC(8): H01L33/10H01L33/14H01L33/24B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L33/10H01L33/145H01L33/24
Inventor 郑锦坚钟志白杨焕荣李志明杜伟华邓和清伍明跃周启伦林峰李水清康俊勇
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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