Perovskite quantum dot solar cell and preparation method thereof

A technology of solar cells and quantum dots, which is applied in the field of solar cells, can solve problems affecting quantum dots and quantum dot charge transmission in thin films, insulating ligands cannot be completely removed, and materials are sensitive to air humidity, etc., to achieve photoelectric conversion efficiency and environmental stability Enhanced performance, facilitated charge transport, high short-circuit current density, and device performance

Active Publication Date: 2019-07-05
SUZHOU UNIV
View PDF9 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] There are few reports on perovskite quantum dot solar cells at present, mainly because the preparation process of perovskite quantum dot thin films is complicated, and the material is sensitive to air humidity, which greatly affects the repeatability of its batteries; In perovskite quantum dot solar cells, the insulating ligands on the surface of quantum dots cannot be completely removed, which affects the charge transfer between quantum dots in the thin film, and further makes the short-circuit current density in the battery far lower than that of the corresponding polycrystalline material device. ; also because the ligand removal process is required in the preparation process of perovskite quantum dot solar cells, in this process, insulating ligands such as oleic acid radicals are removed while causing the loss of metal ions, forming a large number of defect states. There are effective solutions reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Perovskite quantum dot solar cell and preparation method thereof
  • Perovskite quantum dot solar cell and preparation method thereof
  • Perovskite quantum dot solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] This embodiment provides a kind of perovskite quantum dot solar cell, the structure is as follows figure 1 As shown, the preparation of the battery includes the following steps: sequentially preparing an electron transport layer 2 , a perovskite quantum dot light-absorbing layer 3 , a hole transport layer 4 and a metal electrode 5 on a conductive glass substrate 1 . Its preparation method and concrete steps are as follows:

[0027] Step 1: Prepare TiO with a thickness of 40 nm on a clean fluorine-doped tin oxide (FTO for short) conductive glass substrate 1 2 Thin film, to obtain the electron transport layer 2, and then annealed at 200 ° C for 30 minutes;

[0028] Step 2: In dry air, a perovskite quantum dot film is prepared on the electron transport layer 2 by a layer-by-layer "spin coating-cleaning" process, and the film is treated with cesium salt to obtain a perovskite quantum dot light-absorbing layer 3 . In the present embodiment, the cesium salt used is cesium a...

Embodiment 2

[0033] This embodiment provides a kind of perovskite quantum dot solar cell, the structure is as follows figure 1 As shown, the preparation of the battery includes the following steps: sequentially preparing an electron transport layer 2 , a perovskite quantum dot light-absorbing layer 3 , a hole transport layer 4 and a metal electrode 5 on a conductive glass substrate 1 . Its preparation method and concrete steps are as follows:

[0034]Step 1: Prepare TiO with a thickness of 40 nm on a clean fluorine-doped tin oxide (FTO for short) conductive glass substrate 1 2 Thin film, obtain the electron transport layer 2, and anneal at 200 ℃ for 30 minutes;

[0035] Step 2: In dry air, spin-coat and clean the perovskite quantum dot film layer by layer on the electron transport layer 2, and treat the film with cesium salt to obtain the perovskite quantum dot light-absorbing layer 3. The cesium salt that adopts in the present embodiment is cesium nitrate, and concrete method is: the Cs...

Embodiment 3

[0041] This embodiment provides a kind of perovskite quantum dot solar cell, the structure is as follows figure 1 As shown, the preparation of the battery includes the following steps: sequentially preparing an electron transport layer 2 , a perovskite quantum dot light-absorbing layer 3 , a hole transport layer 4 and a metal electrode 5 on a conductive glass substrate 1 . Its preparation method and concrete steps are as follows:

[0042] Step 1, on a clean fluorine-doped tin oxide (FTO for short) conductive glass substrate, prepare TiO with a thickness of 40 nm 2 Thin film, obtain the electron transport layer 2, and anneal at 200 ℃ for 30 minutes;

[0043] Step 2: In dry air, spin-coat and clean the perovskite quantum dot film layer by layer on the electron transport layer 2, and treat the film with cesium salt to obtain the perovskite quantum dot light-absorbing layer 3. The cesium salt used in this example is cesium carbonate. The specific method is: the synthesized CsPb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a perovskite quantum dot solar cell and a preparation method thereof. The perovskite quantum dot solar cell comprises a conductive glass substrate, an electron transport layer,a light absorbing layer, a hole transport layer, and a metal anode. The light absorbing layer is a CusPbI3, CsPbBr3 or CsPbBrxI3-x (0<X<3) quantum dot film of a cubic phase perovskite structure modified by a cesium salt. The method for modifying the perovskite quantum dot film by using the cesium salt is simple, highly efficient and reproducible, can passivate the defects on the surface of the perovskite quantum dot, reduces the nonradiative recombination pathway of the perovskite quantum dot, greatly improves the charge transport ability in the quantum dot film, thereby improving the photoelectric conversion efficiency and the environmental stability of the corresponding perovskite quantum dot solar cell. The perovskite quantum dot solar cell provided by the invention has excellent efficiency and good stability.

Description

technical field [0001] The invention relates to a perovskite quantum dot solar cell and a preparation method thereof, belonging to the technical field of solar cells. Background technique [0002] Metal halide perovskite materials are used in solar cells due to their excellent photoelectric properties such as high light absorption coefficient, low exciton binding energy, and long carrier diffusion length. The photoelectric conversion efficiency of perovskite-based solar cells has soared in the past decade and has reached as high as 23.7% so far. In addition, perovskite solar cells have the characteristics of solution method preparation, which can greatly reduce production costs and have great application prospects. [0003] However, today's high-efficiency perovskite light-absorbing materials usually contain methylamine and formamidine volatile organic cations, which are easily decomposed by factors such as water, oxygen, polar solvents, ultraviolet light, and high temperat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/48B82Y30/00
CPCB82Y30/00H10K71/00H10K30/35H10K2102/00Y02E10/549
Inventor 马万里凌旭峰袁建宇
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap