7 results about "Quantum dot solar cell" patented technology

The invention relates to the technical field of PbS quantum dot solar cells, and provides an infrared quantum dot solar cell based on double hole transport layers and a preparation method of the infrared quantum dot solar cell. The infrared quantum dot solar cell comprises a substrate, a bottom electrode, an electron transport layer, a quantum dot photosensitive layer, a hole transport layer and a top electrode which are sequentially stacked, and the hole transport layer comprises a PbS-PbO-EDT hole collection layer and a PbS-PbCl2-EDT hole collection layer which are arranged on the quantum dot photosensitive layer in sequence. The hole transport layer of a double-layer structure is adopted, Cl ligands are introduced, stress caused by volume shrinkage during ligand exchange is reduced, open-circuit voltage and short-circuit current losses caused by cracks on the surface of the film are reduced, meanwhile, the energy band level of the composite film is almost kept unchanged, and voltage losses are avoided.

The utility model discloses a double-sided flexible solar cell. The solar cell sequentially comprises a flexible semitransparent photovoltaic cell, a curved surface reflector and a flexible photovoltaic cell from top to bottom, wherein the flexible semitransparent photovoltaic cell sequentially comprises a packaging layer, a second transparent electrode, an electron transport layer, a light absorption layer, a hole transport layer and a first transparent electrode from top to bottom; the curved-surface reflecting mirror comprises a curved-surface substrate, a high-reflectivity metal layer and a weather-resistant protective layer from top to bottom in sequence. The flexible photovoltaic cell is one of a perovskite solar cell, an organic solar cell, a CIGS solar cell, a dye-sensitized solar cell, a monocrystalline silicon solar cell, an amorphous silicon solar cell, a cadmium telluride thin film solar cell and a quantum dot solar cell. The double-sided flexible solar cell provided by the utility model can solve a series of problems of low solar spectrum utilization rate, insufficient collaboration of photovoltaic and photo-thermal systems, poor adaptability of complex curved surfaces and the like of the traditional flexible solar cell.

This invention provides a perovskite quantum dot solar cell and its preparation method. The method includes: a conductive glass, on which an electron transport layer, a light-absorbing layer, a hole layer, and a metal anode are sequentially deposited. This invention utilizes lead salt modification and vacuum drying to reduce damage to the perovskite quantum dot film. This method is simple, efficient, and reproducible, effectively passivating surface defects in the perovskite quantum dots and increasing the density of the perovskite quantum dot film, reducing non-radiative recombination of charge carriers. Simultaneously, it improves the photogenerated charge transport capability in the quantum dot film, increasing the open-circuit voltage and short-circuit current of the perovskite quantum dot solar cell, resulting in a high-performance perovskite quantum dot solar cell. The perovskite quantum dot film prepared by this method has good density and high coverage, significantly improving the quality of the quantum dot film. Furthermore, the reaction conditions are easy to control, reproducible, and the equipment is simple, facilitating its application in practical production.

The invention provides a lead halide perovskite quantum dot, conductive ink, a preparation method and application. An organic acid / alkali ligand is used as an initiator, the surface of the quantum dot is treated through liquid-phase ligand exchange, an insulating ligand on the surface of the quantum dot is effectively removed under the condition of keeping a crystal structure unchanged, the high-dispersion and high-stability quantum dot and conductive ink are prepared, one-step spin coating or blade coating film forming can be achieved, and a complex layer-by-layer deposition process is not needed. The method has the characteristics of simplicity in operation and easiness in regulation and control. According to the lead halide perovskite quantum dot provided by the invention, the acid-base environment in the quantum dot solution is regulated and controlled, the dynamic balance of the surface ligand of the quantum dot is broken, the separation of the quantum dot and the surface ligand is realized, the perovskite quantum dot ink with low ligand density and high conductivity is prepared, the efficiency of the prepared photoelectric device reaches 16.04%, and the photoelectric device has good application prospects. The perovskite quantum dot solar cell prepared by the method has the advantages that the device efficiency reaches 16.57%, and the method has a wide application prospect.

The application discloses a preparation method of an array quantum dot solar cell, which comprises the following steps: preparing a BiVO4 dense layer and a BiVO4 nanorod array as an electron transport layer on a conductive glass; depositing a histidine monomolecular modification layer on the electron transport layer, and then depositing PbS quantum dots as a light absorption layer on the histidine monomolecular modification layer; depositing a hole transport layer on the light absorption layer; and evaporating a metal electrode layer on the hole transport layer. The carboxyl group at one end of the histidine molecule is chemically combined with bismuth vacancies and vanadium vacancies in the BiVO4, and the imidazole ring at the other end of the histidine molecule is complexed with lead atoms in the PbS quantum dots, so that the load of the PbS quantum dots and the light absorption of the solar cell are increased, the electron transfer between the PbS quantum dots and the BiVO4 nanorod array is enhanced, and the short-circuit current and the photoelectric conversion efficiency of the solar cell are improved.

The present disclosure provides a process for synthesis of metal sulfide semiconductor nanocrystals. The process includes mixing a metal precursor solution with a sulfur precursor solution at a temperature of no more than 200 °C to form a reaction solution. The metal precursor solution includes a metal compound dissolved in a solvent, and the sulfur precursor solution includes a sulfur compound dissolved in a solvent. The metal is present at a concentration of no more than about 1.2 mmol / mL, and the metal and sulfur are present at a S : M molar ratio of at least 1.5 : 1. The metal is lead (Pb), zinc (Zn) or cadmium (Cd). The sulfur compound is a volatile sulfur compound having a boiling point of up to 100°C and / or a low molecular weight sulfur compound having a molecular weight of up to 500 g / mol. Also disclosed are semiconductor nanocrystals made according to the process, a quantum dot solar cell incorporating the semiconductor nanocrystals, use of the semiconductor nanocrystals in a solar cell, and a method of preparing a quantum dot solar cell. Figure 1 to be published with the Abstract.

The present invention relates to a perovskite quantum dot solar cell and a preparation method thereof. The cell structure includes a conductive glass substrate, an electron transport layer, a quantum dot light absorption layer, a hole transport layer, and a metal electrode: The quantum dot light absorption layer is obtained by treating a perovskite quantum dot thin film with a structure of ABX3 with a mixed solution of an ionic liquid and a certain acid ester to synergistically achieve ligand exchange and surface defect passivation. The present invention addresses the contradiction between the conductivity and material stability in the light absorption layer of existing perovskite quantum dot solar cells. By using an ionic liquid with adjustable solubility in acid esters to treat the perovskite quantum dot thin film to remove insulating ligands, stabilize the quantum dot structure, and effectively passivate the surface defects of the quantum dots, a simple and universal method is provided, enabling the prepared perovskite quantum dot solar cell to achieve improvements in efficiency and stability. It is also applicable to optoelectronic device fields such as LEDs and photodetectors based on perovskite quantum dots.