8 results about "Silicon quantum dots" patented technology

This invention provides a silicon quantum dot modified composition, modified silicon quantum dots, a thickener, a thickener system, drilling fluid, and completion fluid. The silicon quantum dot modified composition comprises an organic solvent and two modifying agents. When the silicon quantum dots obtained by further modification of this silicon quantum dot modified composition are used as thickeners in high-salinity drilling and completion fluids, the thickener exhibits excellent high-temperature resistance and continues to provide good rheological and thixotropic properties even after aging.

The application discloses a kind of high-pressure polarization quantum dot electrode preparation process without attenuation, belongs to energy storage electrode preparation technical field.The process includes five core steps of quantum dot pretreatment, electrode coating, drying, two-way differentiation polarization, post-processing, by surface pretreatment to carbon quantum dots and silicon oxide quantum dots, optimize coating process, adopt two-way differentiation polarization of accurate temperature control, control field, combined with post-processing solidification, prepare anode polarization carbon quantum dot positive electrode and cathode polarization silicon oxide quantum dot negative electrode.The polarization quantum dot electrode prepared in the application has strong charge trap stability, non-decay charge density, complete electrode structure, no cracking, falling phenomenon when working in the range of 0.1V to infinite high voltage, adapts to infinite high-voltage energy storage device, solves the technical pain points of existing polarization electrode performance attenuation under high pressure, structure damage.

This invention discloses a water-based fast-drying anti-rust paint and its preparation process and method. The paint comprises a core-shell acrylic emulsion, an acrylic phosphate emulsion, a nano-composite zinc phosphomolybdate, nano-graphene, a phytic acid-modified silicon quantum dot composite, sodium metavanadate, and additives. It has excellent long-lasting anti-corrosion, fast-drying application, and environmental friendliness, and is particularly suitable for rust prevention and protection of steel substrates in high-chlorine corrosion environments such as marine environments.

This invention discloses a wide-voltage energy storage system based on quantum dot polarized electrets, belonging to the field of energy storage system technology. The energy storage system includes a quantum dot polarized electret energy storage unit, a series boost module, a charge / discharge control module, and a safety protection module. The quantum dot polarized electret energy storage unit consists of an anode-polarized carbon quantum dot electret positive electrode, a solid insulating layer, and a cathode-polarized silicon oxide quantum dot electret negative electrode. Stable electret charge and a built-in electric field are formed through bidirectional polarization, achieving wide-voltage energy storage. The series boost module connects multiple energy storage units in series, enabling flexible adjustment of the operating voltage from 0.1V to theoretically infinite voltage. The charge / discharge control module adjusts charge / discharge parameters, and the safety protection module ensures system safety. This invention can adapt to various high-voltage and extreme environment energy storage needs.

This application discloses a fast virtual gate extraction method and related apparatus based on silicon spin qubits. The method includes locating transition line regions in a charge stability map, which reflects the dependence between the stability of charge states and gate voltage in a silicon quantum dot device. The transition line regions represent the gate voltage regions when charge states undergo a transition. A region search is performed within these transition line regions to determine transition lines, which are composed of multiple transition points. A virtualization matrix is ​​reconstructed based on these transition points to achieve precise adjustment of the quantum dots in the silicon quantum dot device. The virtualization matrix is ​​a unitary matrix corresponding to a virtual gate. A virtual gate is a gate operation that generates a control voltage based on a unitary matrix to achieve precise orthogonal control of a single quantum dot. Using this application, the efficiency of virtual gate extraction can be improved, thereby enhancing the computational efficiency and accuracy of silicon quantum computers.