58 results about "Nanocrystalline silicon" patented technology

The invention discloses a solar cell and a manufacturing method thereof, and a photovoltaic module, and the solar cell comprises a semiconductor substrate which is provided with a first surface and a second surface which are opposite to each other; the first semiconductor layer is arranged on the first face, the first semiconductor layer comprises a first part and a second part adjacent to the first part in the second direction, the crystallization degree of the first part is larger than that of the second part, and the first semiconductor layer comprises at least one of amorphous silicon, nanocrystalline silicon and microcrystalline silicon. According to the solar cell, the reasonable crystallization area and the non-crystallization area are arranged on the first semiconductor layer, the overall cell efficiency of the solar cell is optimized and improved by means of the high crystallization degree of the first part, and meanwhile the passivation effect of the second part is guaranteed and electric leakage is prevented by means of the low crystallization degree of the second part.

The invention provides a solar cell and a manufacturing method thereof, and belongs to the technical field of semiconductor devices. The solar cell comprises a silicon substrate and a semiconductor layer, the silicon substrate comprises a first surface and a second surface which are opposite, the semiconductor layer is located on the first surface, the first semiconductor layer comprises a second structural region and a first structural region, and the crystallization degree of the first structural region is larger than that of the second structural region; wherein the second structural region is closer to the first surface than the first structural region, and the first semiconductor layer comprises at least one of amorphous silicon, nanocrystalline silicon or microcrystalline silicon. The semiconductor layer has a crystallization structure, and the contact resistance between the semiconductor layer and the conductive material layer can be reduced, so that the current transmission characteristic is improved, the energy consumption in the current collection process is reduced, and the cell efficiency is improved.

The invention discloses a solar cell and a manufacturing method thereof, relates to the technical field of photovoltaic, and aims to increase the conductivity and effective doping concentration of a first part, covering at least part of the top of a pyramid-like pyramid, of a first semiconductor layer and facilitate reduction of transmission loss of carriers collected in the first semiconductor layer transmitted to a conductive material. The solar cell includes a semiconductor substrate and a first semiconductor layer. The semiconductor substrate comprises a first surface and a second surface which are opposite. At least one of the first surface and the second surface is a target surface. The surface of at least partial area of the target surface is a suede, and a plurality of similar pyramids are formed on the suede. The plurality of pyramids comprise a plurality of first pyramids, the first semiconductor layer is arranged on the textured surface, and the material of the first semiconductor layer comprises amorphous silicon and / or nano-crystalline silicon. The first semiconductor layer comprises a first part covering the top of the first-type pyramid and a second part covering the base of the first-type pyramid, and the crystallization degree of the first part is larger than that of the second part.

The embodiment of the invention relates to the photovoltaic field, and provides a solar cell piece and a manufacturing method thereof, a laminated cell and a photovoltaic module, and the solar cell piece comprises a substrate which comprises a front surface and a back surface which are opposite to each other, and is also provided with a first region and a second region; the tunneling layer covers the back surface of the substrate; the doped conductive layer covers the surface of the tunneling layer, the doped conductive layer with the orthographic projection located in the first region comprises a first doped sub-layer and a second doped sub-layer which are stacked, the first doped sub-layer covers the surface of the tunneling layer, the second doped sub-layer covers the surface of the first doped sub-layer, and the second doped sub-layer covers the surface of the second doped sub-layer; the doping concentration of the first doping sub-layer is smaller than that of the second doping sub-layer, the second doping sub-layer is made of nanocrystalline silicon, or part of the second doping sub-layer is made of amorphous silicon, and the first doping sub-layer is made of polycrystalline silicon; a passivation layer; and the back electrode is electrically connected with the second doped sub-layer. The reliability of the solar cell can be improved.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact solar cell, a preparation method thereof and a photovoltaic module, and the method comprises the steps: providing a substrate which comprises a front surface and a back surface which are opposite to each other, and the back surface comprises a first region and a non-first region; sequentially stacking a first doped conductive layer and a first mask layer on the back surface of the substrate, and removing the first mask layer corresponding to a non-first region through laser; at least removing the first doped conductive layer corresponding to the non-first region, wherein the remaining first doped conductive layer forms a first emitter; a second doped conductive layer and a second mask layer are sequentially stacked on the side, away from the first emitting electrode, of the remaining first mask layer and the non-first region, and materials of the first mask layer and the second mask layer independently comprise at least one of amorphous silicon, nanocrystalline silicon and silicon carbide; at least removing the second mask layer corresponding to the first region through laser; and at least removing the second doped conductive layer corresponding to the first region, wherein the remaining second doped conductive layer forms a second emitter.

The invention belongs to the technical field of lithium ion batteries, and particularly relates to a preparation method of a graded ordered silicon-carbon negative electrode material for a lithium ion battery, which comprises the following steps: (S1) mixing phenolic resin and a template agent, calcining, and etching to obtain porous carbon containing macropores; (S2) carrying out cracking and carbon coating on the silicon source gas to obtain nano crystalline silicon containing a carbon coating layer; (S3) mixing the porous carbon with the nano crystalline silicon containing the carbon coating layer, and then carrying out ultrasonic vibration, so that macropores of the porous carbon are filled with the nano crystalline silicon to obtain a silicon-carbon composite material I; (S4) treating the silicon-carbon composite material I by using a carbon-containing sealing agent, and then activating to obtain a silicon-carbon composite material II; and (S5) carrying out vapor phase silicon deposition on the silicon-carbon composite material II to fill the amorphous silicon in the pores of the porous carbon, and then carrying out carbon coating to obtain the graded ordered silicon-carbon negative electrode material. The silicon-carbon negative electrode material prepared by the invention is of a composite structure in which crystalline silicon and amorphous silicon are spatially and orderly distributed, so that the structural stability and the uniform distribution of silicon are realized.

The invention discloses a solar cell and a manufacturing method thereof, relates to the field of photovoltaic technology, and aims to increase the surface area of one side, deviating from a semiconductor substrate, of a first semiconductor layer and facilitate the increase of the contact area between the first semiconductor layer and a transparent conductive layer or an electrode and other conductive materials. Therefore, the transmission loss of carriers collected in the first semiconductor layer transmitted to the conductive material is reduced, and the working efficiency of the solar cell is improved. The solar cell includes a semiconductor substrate and a first semiconductor layer. The semiconductor substrate has a first surface and a second surface opposite to each other. At least one of the first surface and the second surface is a target surface. The surface of at least part of the area of the target surface is a suede, and the suede comprises a plurality of pyramid-like parts. The first semiconductor layer is disposed on the textured surface. A hole structure is arranged in the first semiconductor layer, and the hole structure is distributed in the part, covering at least part of the pyramid-like top, of the first semiconductor layer. The material of the first semiconductor layer comprises at least one of amorphous silicon, nanocrystalline silicon and microcrystalline silicon.

The invention discloses a forming method of a flash memory unit. The forming method comprises the following steps: providing a semiconductor substrate; forming a tunneling oxide layer on the semiconductor substrate; forming nanocrystalline silicon particles on the tunneling oxide layer; forming an isolation insulating layer on the tunneling oxide layer and the nanocrystalline silicon particles; and forming a control grid on the isolation insulating layer, wherein the step of forming the nanocrystalline silicon particles on the tunneling oxide layer comprises: forming an amorphous silicon layer on the tunneling oxide layer; and performing repeated seed crystal particle forming processes on the amorphous silicon layer, wherein surface annealing treatment is performed between two adjacent seed crystal particle forming processes, and an annealing process is performed after the last seed crystal particle forming process. The flash memory unit can be used for storing a large quantity of electrons, and has high performance.

Disclosed in the present application are a solar cell and a manufacturing method therefor, and a photovoltaic module. The solar cell comprises: a semiconductor substrate, which has a first surface and a second surface opposite to each other; and a first semiconductor layer, which is arranged on the first surface, and comprises a first part and a second part that is closely adjacent to the first part in a second direction, wherein the degree of crystallization of the first part is greater than that of the second part, and the first semiconductor layer is made of at least one of amorphous silicon, nanocrystalline silicon and microcrystalline silicon. By providing a rational crystallized area and a rational non-crystallized area on the first semiconductor layer, the overall cell efficiency of the solar cell is optimized by means of the higher degree of crystallization of the first part, thereby improving the cell efficiency; in addition, the passivation effect of the second part is ensured by means of the lower degree of crystallization of the second part, thereby preventing electric leakage.

The invention discloses a heterojunction solar cell and a manufacturing method and equipment thereof. A front passivation layer and a front doping layer are arranged on the front side of the silicon substrate, and a back passivation layer, a back intrinsic layer and a back doping layer are arranged on the back side of the silicon substrate. The front passivation layer and the back passivation layer are made of intrinsic amorphous silicon-based materials; the front doping layer and the back doping layer can be made of microcrystalline silicon-based materials, the back intrinsic layer is made of microcrystalline silicon-based materials or nanocrystalline silicon-based materials, and the back intrinsic layer is formed on the back passivation layer; and forming a back doping layer on the back intrinsic layer. According to the method, the microcrystalline silicon film layer with high quality and high crystallization rate can be quickly deposited, so that the conversion efficiency of the cell is improved, and the current leakage at the edge side of the silicon substrate is reduced.

The disclosure provides a composite structure solar cell, and belongs to the technical field of solar cells. The composite structure solar cell comprises an N-type silicon substrate, a first passivation layer arranged on a first surface of the N-type silicon substrate, a reflection reduction layer arranged on the first passivation layer, a second passivation layer arranged on a second surface of the N-type silicon substrate, an N-type nanocrystalline silicon layer and a P-type nanocrystalline silicon layer arranged adjacently on the second passivation layer, a TCO layer arranged on the N-type nanocrystalline silicon layer and the P-type nanocrystalline silicon layer, and a first electrode and a second electrode arranged on the TCO layer. By arranging the TCO film and the low-temperature amorphous silicon layer on one side of the N-type silicon substrate, the problem of large cutting loss of the heterojunction cell is solved, and by arranging the first electrode and the second electrode of the cell at the rear end of the cell, the overlapping loss between the cell pieces can be avoided, and the CTM rate is improved.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate with a light incident surface and a backlight surface which are oppositely arranged; the first intrinsic amorphous silicon layer and the first doping layer are located on the light incident surface and are sequentially stacked in the direction away from the silicon substrate; wherein the first doping layer comprises a nanocrystalline silicon oxide layer; the second intrinsic amorphous silicon layer, the second doping layer and the second transparent conductive oxide layer are located on the backlight surface and sequentially stacked in the direction away from the silicon substrate; wherein the second doping layer comprises a first microcrystalline silicon oxycarbide layer, a second microcrystalline silicon oxycarbide layer and a third microcrystalline silicon oxycarbide layer which are sequentially stacked in the direction away from the silicon substrate. According to the technical scheme, the solar cell is beneficial to migration of carriers, and the current density and the photoelectric conversion efficiency of the solar cell can be improved.

The utility model relates to the technical field of solar power generation, and discloses a heterojunction solar cell, and an assembly and a system comprising the heterojunction solar cell. The heterojunction solar cell comprises a silicon substrate, a first intrinsic silicon oxide layer, a first intrinsic amorphous silicon layer, a second intrinsic silicon oxide layer, a first doped amorphous silicon layer, a first transparent conductive layer, a third intrinsic silicon oxide layer, a second intrinsic amorphous silicon layer, a fourth intrinsic silicon oxide layer, a second doped amorphous silicon layer and a second transparent conductive layer, according to the invention, the first intrinsic silicon oxide layer, the second intrinsic silicon oxide layer, the third intrinsic silicon oxide layer and the fourth intrinsic silicon oxide layer are arranged; the first intrinsic silicon oxide layer, the second intrinsic silicon oxide layer, the third intrinsic silicon oxide layer and the fourth intrinsic silicon oxide layer are one or more of intrinsic polycrystalline silicon oxide, intrinsic microcrystalline silicon oxide and intrinsic nanocrystalline silicon oxide, so that the overall resistance value of the battery can be reduced; and the overall electron transmission performance and the front light transmittance of the battery can be improved.

The invention relates to a compact nanocrystalline silicon carbide high-hardness and high-toughness block material and a preparation method thereof. The average grain size of the block is smaller than 100 nm, and the grain contains a large number of stacking faults and twin crystal structures. The bulk material has a Vickers hardness value of 30 GPa or higher and a fracture toughness of 4.5 MPa.m1 / 2 or higher. The block material has excellent fracture toughness and good hardness, can be made into finished products such as cutters, and has great application potential in the fields of precision machining and the like.

The invention provides a heterojunction solar cell and a preparation method thereof. The heterojunction solar cell comprises an n-type or p-type silicon wafer which is subjected to n-type or p-type doping treatment and is provided with a front surface and a back surface which are opposite to each other; the first passivation layer and the second passivation layer are sequentially arranged on the front surface of the n-type or p-type silicon wafer; the third passivation layer and the fourth passivation layer are sequentially arranged on the back face of the n-type or p-type silicon wafer, the microcrystalline or nanocrystalline silicon oxycarbide layer is arranged on the face, away from the n-type or p-type silicon wafer, of the fourth passivation layer, the microcrystalline or nanocrystalline silicon oxycarbide layer is subjected to n-type or p-type doping treatment so as to form a PN junction with the n-type or p-type silicon wafer, and the third passivation layer and the fourth passivation layer are sequentially arranged on the back face of the n-type or p-type silicon wafer. The atomic percent of carbon element in the silicon oxycarbide layer is larger than that of oxygen element in the silicon oxycarbide layer. According to the heterojunction solar cell, the performance of the solar cell is improved, and the carbon element and the oxygen element have a fixing effect on the hydrogen element in the silicon oxycarbide layer, so that the loss of the hydrogen element is reduced.

The present application belongs to the technical field of semiconductor devices. Provided are a solar cell and a manufacturing method therefor. The solar cell comprises a silicon substrate and semiconductor layers, wherein the silicon substrate comprises a first surface and a second surface which are opposite to each other; the semiconductor layers are located on the first surface; a first semiconductor layer comprises a second structure area and a first structure area, the degree of crystallization of the first structure area being greater than that of the second structure area, and the second structure area being closer to the first surface than the first structure area; and the first semiconductor layer is made of at least one of amorphous silicon, nanocrystalline silicon and microcrystalline silicon. The semiconductor layers in the present application have crystallized structures, and thus the contact resistance between the semiconductor layers and a conductive material layer can be reduced, thereby improving current transmission characteristics, reducing the energy consumption during a current collection process, and improving the cell efficiency.

This invention relates to the field of solar cell technology, providing a TOPCon solar cell and its fabrication method, cell module, and photovoltaic system. The TOPCon solar cell includes a silicon wafer and a first silicon oxide layer, a nanocrystalline silicon layer, a second silicon oxide layer, an n-type doped polycrystalline silicon layer, and a back metal electrode sequentially stacked on the back of the silicon wafer. The back metal electrode is in conductive contact with the n-type doped polycrystalline silicon layer. The nanocrystalline silicon layer serves to prevent phosphorus atoms in the n-type doped polycrystalline silicon layer from diffusing into the first silicon oxide layer and the silicon wafer. Thus, a nanocrystalline silicon layer is disposed between the two silicon oxide layers on the back, effectively blocking phosphorus atoms in the n-type doped polycrystalline silicon layer to prevent phosphorus atoms from diffusing into the first silicon oxide layer and the silicon wafer, thereby avoiding increased defects and loss of open-circuit voltage.

A composite nanocrystalline silicon layer can be formed by depositing a polycrystalline silicon sublayer directly or indirectly on a substrate. An amorphous silicon sublayer is deposited on the polycrystalline silicon sublayer. The composite nanocrystalline silicon layer can be formed by repeating the deposition of the polycrystalline silicon sublayer and the amorphous silicon sublayer.

The invention discloses a preparation process of a thermophotovoltaic device and the thermophotovoltaic device. The preparation process comprises the following steps: carrying out double-sided polishing treatment on a germanium wafer; depositing a phosphorus-doped nanocrystalline silicon thin film layer on the back surface of the germanium wafer; printing photoresist on the nanocrystalline silicon thin film layer, and forming spaced P pole regions in a manner of exposure, development and etching reduction; a-SiCx / AI2O3 / SiC laminated film deposition is respectively carried out on the front surface and the back surface of the germanium sheet; plating a layer of aluminum film on the back surface of the germanium sheet; doping the aluminum element part laser in the aluminum film into the germanium sheet substrate to form contact in the P pole region by adopting infrared laser; and separating the aluminum films of the P-pole region and the N-pole region by adopting a printing etching mode to form a positive electrode and a negative electrode. According to the manufacturing process and the photovoltaic device provided by the invention, the front single side is not provided with an electrode and is not shielded, the front light receiving is increased, and the front infrared radiation photoelectric conversion efficiency is improved; the preparation process is simple, and the metallization of the electrode does not need high temperature and is low in cost.

The invention discloses a solar cell and a manufacturing method thereof, and a photovoltaic module, and relates to the field of photovoltaic technology. The manufacturing method of the solar cell comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate has a first surface and a second surface which are opposite; forming a first semiconductor layer on the first surface, wherein the first semiconductor layer comprises amorphous silicon and / or nanocrystalline silicon; forming a transparent conductive layer on the first surface, wherein the transparent conductive layer is located on one side, deviating from the semiconductor substrate, of the first semiconductor layer; and irradiating at least a part of the first semiconductor layer with laser to increase the crystallization degree of at least a local region of the part, irradiated by the laser, of the first semiconductor layer. In the actual manufacturing process, the first semiconductor layer containing the amorphous silicon can be rapidly grown firstly, and then the crystallization degree of at least a local area of the first semiconductor layer is increased by utilizing laser irradiation, so that the contact resistance of the doping layer is reduced, and the contact resistance and transmission loss are reduced while the production efficiency is ensured.

The present application relates to the technical field of photovoltaics, and discloses a solar cell and a manufacturing method therefor, and a photovoltaic module, for use in optimizing cell efficiency of a solar cell having an amorphous silicon film layer. The solar cell comprises: a semiconductor substrate having a first surface and a second surface that are opposite to each other; a first semiconductor layer arranged on the first surface, wherein the first semiconductor layer is provided with first parts located in middle areas in the first surface and second parts located in edge areas in the first surface, and the crystallization rate of the first parts is greater than that of the second parts, wherein the edge areas surround the middle areas, and the edge areas are adjacent to edges of the first surface, and the first semiconductor layer comprises at least one of amorphous silicon and nanocrystalline silicon.

The invention discloses a solar cell, a manufacturing method thereof and a photovoltaic module, relates to the technical field of photovoltaic, and is used for optimizing the cell efficiency of the solar cell with an amorphous silicon film layer. The solar cell comprises a semiconductor substrate having a first surface and a second surface opposite to each other; the first semiconductor layer is arranged on the first face, the first semiconductor layer comprises a plurality of first strip-shaped parts extending in the first direction, each first strip-shaped part comprises a first part and a second part, the first parts are located in the middle areas of the extending directions of the first strip-shaped parts, and the second parts are located in the middle areas of the extending directions of the second strip-shaped parts; the second parts are located in edge areas of the two ends of the first strip-shaped part in the extending direction, the edge areas are adjacent to the edge of the first face, the crystallization rate of the first parts is larger than that of the second parts, and the first semiconductor layer comprises at least one of amorphous silicon and nanocrystalline silicon.

The invention discloses a back contact thermophotovoltaic device structure of infrared radiation light and a preparation process, and belongs to the field of thermophotovoltaic power generation. A manufacturing process of a back contact thermophotovoltaic device comprises the following steps of: performing boron diffusion on a P-type substrate to form a P + front field; etching the P + front field on the back surface part of the substrate to reserve a forming region of an N region; depositing and forming a phosphorus-doped nanocrystalline silicon thin film layer on the back surface of the substrate; depositing on the back surface or double surfaces of the substrate to form a laminated film; local mold opening is carried out on the P region and the N region, and mold opening of the P region comprises the step of opening the laminated film and the phosphorus-doped nanocrystalline silicon thin film layer below the laminated film; the N-area mold opening comprises the step of opening the laminated film; plating a metal film on the back surface to form positive and negative electrodes; and patterning is carried out, so that the metal film on the positive electrode is isolated from the metal film on the negative electrode. Compared with the prior art, the front surface of the back contact thermophotovoltaic device is not shielded by an electrode, so that the front surface light receiving is increased, and the front surface infrared radiation photoelectric conversion efficiency is improved; and a p + front field is added on the front surface, and a p + layer is added on a P region metal contact region on the back surface, so that the collection efficiency of photon-generated carriers is improved, the resistance of the contact region is reduced, and the thermal radiation photoelectric conversion efficiency of the whole device is improved.

Disclosed in the present invention are a heterojunction solar cell, and a fabrication method and device therefor. A front passivation layer and a front doping layer are provided on the front side of a silicon substrate, and a back passivation layer, a back intrinsic layer and a back doping layer are provided on the back side of the silicon substrate. The front passivation layer and the back passivation layer are each made of an intrinsic amorphous silicon-based material. The front doping layer and the back doping layer can each be made of a microcrystalline silicon-based material. The back intrinsic layer is made of a microcrystalline silicon-based material or a nanocrystalline silicon-based material. The back intrinsic layer is formed on the back passivation layer, and the back doping layer is formed on the back intrinsic layer. In the present invention, a microcrystalline silicon film layer having a high quality and a high crystalline fraction can be quickly deposited, thereby improving the conversion efficiency of the cell, and reducing the current leakage at the edge of the silicon substrate.

The invention relates to the technical field of solar cells, and discloses a back contact solar cell and a preparation method thereof. According to the back contact solar cell disclosed by the invention, the backlight surface of the substrate layer comprises first areas and second areas which are alternately arranged; the first passivation contact structure in the first region comprises a tunneling oxide layer and a doped polycrystalline silicon layer; the second passivation contact structure of the second region comprises a first structure layer and a second structure layer; the first structure layer comprises a first contact region with an intrinsic microcrystalline silicon layer or an intrinsic nanocrystalline silicon layer and a first non-contact region with an intrinsic amorphous silicon layer; the second structure layer comprises a second contact region with a doped microcrystalline silicon layer or a doped nanocrystalline silicon layer and a second non-contact region with a doped amorphous silicon layer, and the first contact region and the second contact region are at least partially overlapped and cover a part of the second region; the first electrode is connected with the doped polycrystalline silicon layer, the second electrode is connected with the second contact area, characteristic matching of different areas is optimized, and the power generation performance of the battery is improved.

The invention relates to a preparation method of a nanocrystalline silicon carbide coating on the inner wall of a small-diameter thin tube, and belongs to the technical field of preparation of silicon carbide coatings. According to the performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter thin tube, predicting the mechanical property of the current nanocrystalline silicon carbide coating on the inner wall of the small-diameter thin tube, and finally evaluating the mechanical property of the current nanocrystalline silicon carbide coating on the inner wall of the small-diameter thin tube. And the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter thin tube in the preparation process are dynamically adjusted according to the evaluation result. By optimizing the voltage parameters, the nanoscale silicon carbide coating with the thickness remarkably increased, uniform distribution and excellent mechanical performance is prepared, and the method can be applied to improvement of the hardness of the inner wall of a slender pipe and has important value in future industrial application such as nuclear fuel cladding and the like.

The invention is applicable to the field of photovoltaic technology, and provides a back contact battery, a battery assembly and a photovoltaic system, the back contact battery comprises a silicon substrate which comprises a back surface and a front surface, and the back surface is provided with a first area and a second area; bulges are formed on the silicon substrate between the first region and the second region which are adjacent to each other; the first doping layer is arranged in the first region and is at least one of a doped amorphous silicon layer, a doped microcrystalline silicon layer and a doped nanocrystalline silicon layer; the second doping layer is arranged in the second region and is at least one of a doped polycrystalline silicon layer, a doped amorphous silicon layer, a doped microcrystalline silicon layer and a doped nanocrystalline silicon layer; the doping concentration of the isolation layer is less than or equal to 1E18 / cm < 3 >; a first transparent conductive film; the first metal electrode is electrically connected with the first doping layer; and the second metal electrode is electrically connected with the second doped layer. According to the back contact battery, the electrical isolation effect between the first doping layer and the second doping layer can be improved, and the risk of short-circuit electric leakage is reduced.

The utility model relates to a heterojunction solar cell, a solar module and a solar system, the heterojunction solar cell comprises a silicon substrate, one side of the silicon substrate is provided with a first intrinsic layer, a first doping layer, a first conducting layer and a first electrode, a second intrinsic layer, a second doping layer, a second conducting layer and a second electrode are arranged on the other surface of the silicon substrate outwards, and the first intrinsic layer and the second intrinsic layer are of at least three-layer laminated structures; the at least six layers of laminated structures of the first intrinsic layer and the second intrinsic layer comprise an intrinsic amorphous silicon layer, an intrinsic amorphous silicon oxide layer and an intrinsic amorphous silicon carbide layer, and at least one layer of the at least six layers of laminated structures is an intrinsic polycrystalline silicon layer, an intrinsic microcrystalline silicon layer or an intrinsic nanocrystalline silicon layer; and the doping types of the first doping layer and the second doping layer are opposite. According to the utility model, the overall resistance value of the heterojunction solar cell can be reduced, the passivation effect of the field effect is enhanced, and the conversion efficiency of the heterojunction solar cell is optimized.

The invention discloses a manufacturing method of a solar cell, the solar cell and a photovoltaic module, and relates to the technical field of photovoltaics. The manufacturing method of the solar cell comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate has a first surface and a second surface which are opposite; a first semiconductor layer is formed on the first surface, the first semiconductor layer comprises amorphous silicon and / or nanocrystalline silicon, and the first semiconductor layer comprises at least one processing area; laser is utilized to irradiate a part of the processing area along a plurality of paths, and areas irradiated by the laser along the plurality of paths are not overlapped, so that the crystallization degree of the part, irradiated by the laser, of the first semiconductor layer is increased, and a crystallization area is formed. Therefore, when the crystallization degree of the part, irradiated by the laser, of the first semiconductor layer is increased to form a crystallization area, the area, irradiated by the laser, in the processing area is prevented from being damaged due to the action of the laser, and the power generation performance of the solar cell is ensured while the contact resistance and the transmission loss are reduced.

The application discloses a solar cell and a manufacturing method thereof and a photovoltaic module. The solar cell comprises a semiconductor substrate, the semiconductor substrate has a first surface and a second surface opposite to each other, and a first semiconductor layer is arranged on the first surface. The first semiconductor layer comprises a first part and a second part adjacent to the first part along a second direction. The crystallization degree of the first part is greater than that of the second part. The first semiconductor layer comprises at least one of amorphous silicon, nanocrystalline silicon and microcrystalline silicon. By arranging a reasonable crystallization area and an amorphous area on the first semiconductor layer, the overall cell efficiency of the solar cell is optimized by the higher crystallization degree of the first part, the cell efficiency is improved, and the passivation effect of the second part is ensured by the lower crystallization degree of the second part, so that electric leakage is prevented.