51 results about "Semiconductor Nanoparticles" patented technology

A semiconductor nanoparticle, a production method, and an electroluminescent device including the same. The semiconductor nanoparticle includes zinc, sulfur, and selenium, and the semiconductor nanoparticle comprises a first semiconductor nanocrystal; and a semiconductor nanocrystal shell including zinc and sulfur disposed on the first semiconductor nanocrystal, and the semiconductor nanoparticle does not include cadmium; the semiconductor nanoparticle further includes a plurality of organic ligands (or a ligand system), that include a first organic ligand having a carboxylate moiety and a second organic ligand having a carboxylate moiety different from the first organic ligand. In a gas chromatography analysis, the semiconductor nanoparticle exhibits a first peak assigned to the first organic ligand and a second peak assigned to the second organic ligand, wherein an area percentage of the first peak relative to the second peak is greater than or equal to about 1% and less than or equal to about 300%.

Some variations provide a photochromic heterostructure comprising: first semiconductor nanoparticles that have an average first-nanoparticle effective diameter from 1 nanometer to 20 nanometers, wherein the first semiconductor nanoparticles are not doped; and second semiconductor nanoparticles that have an average second-nanoparticle effective diameter from 1 nanometer to 60 nanometers, wherein the second semiconductor nanoparticles are doped with one or more transition metals, wherein the second semiconductor nanoparticles have a bandgap energy that is higher than the bandgap energy of the first semiconductor nanoparticles, and wherein the first semiconductor nanoparticles and the second semiconductor nanoparticles are in physical contact with each other. The disclosed photochromic heterostructure is especially useful when lower-energy light excites lower-energy-bandgap first nanoparticles to cause higher-energy-bandgap, doped second nanoparticles to photodarken. If the first nanoparticles were not present, the doped second nanoparticles would require higher-energy light to cause darkening. Examples demonstrate embodiments of the invention.

Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less. General formula: HS-R1-COOR2 (where R1 is a C1-11 hydrocarbon group and R2 is a C1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.

Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less. General formula: HS—R1—COOR2 (where R1 is a C1-11 hydrocarbon group and R2 is a C1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.

Provided is a semiconductor nanoparticle complex composition and the like in which a semiconductor nanoparticle complex is dispersed at a high concentration and which has high fluorescence quantum yield. A semiconductor nanoparticle complex composition in which a semiconductor nanoparticle complex is dispersed in a dispersion medium, wherein: the semiconductor nanoparticle complex has a semiconductor nanoparticle and a ligand coordinated to the surface of the semiconductor nanoparticle; the ligand includes an organic group; the dispersion medium is a monomer or a prepolymer; the semiconductor nanoparticle complex composition further includes a crosslinking agent; and a mass fraction of the semiconductor nanoparticle in the semiconductor nanoparticle complex composition is 30% by mass or more.

Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle is a core-shell type semiconductor nanoparticle including a core containing In and P and one or more layers of shells, wherein at least one of the shells is formed of ZnSe. The ligand includes one or more kinds of mercapto fatty acid esters represented by the following general formula (1): HS—R1—COO—R2 (1). The mercapto fatty acid ester has an SP value of 9.20 or more. The mercapto fatty acid ester has a molecular weight of 700 or less, and the average SP value of the entire ligand is 9.10 to 11.00. The present invention provides a semiconductor nanoparticle complex dispersible at a high mass fraction in a polar dispersion medium while keeping high fluorescence quantum yield (QY) of semiconductor nanoparticles.

A method for producing a semiconductor nanoparticle, a semiconductor nanoparticle, an electroluminescent device including the semiconductor nanoparticle, and a display device. In an embodiment, the method of an embodiment includes preparing a first semiconductor nanocrystal including zinc, tellurium, and selenium, wherein the preparing of the first semiconductor nanocrystal includes heating a first solution including a first zinc precursor, a first selenium precursor and a tellurium precursor in a first organic solvent at a reaction temperature to form a heated solution; and adding an additive to the heated first solution to produce the first semiconductor nanocrystal, wherein the additive includes a second selenium precursor and the additive does not include tellurium, and the semiconductor nanoparticle is configured to emit blue light.

The present invention relates to a semiconductor nanoparticle containing an AgAuTe compound comprising Ag, Au, and Te as essential constituent elements. The AgAuTe compound constituting the semiconductor nanoparticle is represented by the following formula. The semiconductor nanoparticle according to the present invention contains 90 atomic% or more of the AgAuTe compound. The semiconductor nanoparticle according to the present invention has an improved light absorption characteristic in the long wavelength range and can suitably support applications in the near-infrared range and the short-wave infrared range. Specifically, the semiconductor nanoparticle according to the present invention has an absorption edge wavelength on the long wavelength side of the absorption spectrum of 1200 nm or greater. AgxAuyTez (In the formula, x, y, and z represent the number of atoms of Ag, Au, and Te, respectively, and 0.25 ≤ z / (x + y) ≤ 1 holds true. In addition, y / (x + y + z) > 0.10 also holds true.)

An electroluminescent device, a method for manufacturing semiconductor nanoparticles, and a display device are provided. An electroluminescent device of an embodiment includes: a first electrode and a second electrode spaced apart from each other; and a light emitting layer disposed between the first electrode and the second electrode and including semiconductor nanoparticles configured to emit blue light having a peak emission wavelength of greater than or equal to about 440 nm and less than or equal to about 480 nm, the semiconductor nanoparticles including zinc, tellurium, selenium, and sulfur, the semiconductor nanoparticles also include a metal dopant, and the metal dopant includes aluminum, gallium, zirconium, hafnium, magnesium, or a combination thereof.

A semiconductor nanoparticle, a method for preparing the semiconductor nanoparticle, an ink composition including the semiconductor nanoparticle, an electroluminescent device, and a display device including the semiconductor nanoparticle. The semiconductor nanoparticle is configured to emit light and includes a semiconductor nanocrystal and a semiconductor nanocrystal layer including zinc and sulfur. The semiconductor nanoparticle further includes a first compound and a second compound. The first compound includes a first functional group and an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a terminal double bond. The second compound includes a second functional group and an aliphatic hydrocarbon group. The first functional group and the second functional group each independently include a carboxylic acid or its anion.

Provided are a semiconductor nanoparticle, a method of manufacturing the same, and a composite, a color conversion structure, and an electronic device including the same. The semiconductor nanoparticles include silver, indium, gallium, and sulfur, in which the semiconductor nanoparticles are configured to emit green light, and in which the semiconductor nanoparticles have a relative molar value of zinc of greater than or equal to about 0.25 and less than or equal to about 0.9 as defined by Equation 1: Relative molar value of zinc of Equation 1 = [Zn] / ([Ag] + [In] + [Ga] + [Zn]), in Equation 1, in Equation 1, in Equation 1, in Equation 2, in Equation 3, in Equation 4, in Equation 5, in Equation 6, in Equation 6, in Equation 6, in Equation 7, in Equation 6, in Equation 7, in Equation 6, in Equation 7, in [Ag], [In], [Ga], and [Zn] are molar amounts of silver, indium, gallium, and zinc in the semiconductor nanoparticles, respectively, and wherein the molar ratio of gallium to indium is greater than about 2.5: 1 and less than about 5.6: 1.

The objective is to provide quantum dot bodies that maintain the fluorescence emission properties of quantum dots while further improving stability and compatibility with highly polar solvents and photosensitive resin compositions. [Solution] A quantum dot body comprising a quantum dot that emits fluorescence upon excitation light, wherein the quantum dot comprises a core of semiconductor nanoparticles and a shell of semiconductor nanoparticles covering the core of the semiconductor nanoparticles, the surface of the quantum dot is coated with a metal oxide, the surface of the metal oxide is modified with a compound having a methacryloyloxyethyl group and a hydrophilic group represented by the following formula (I) (where R1 represents a hydrophilic group), and the quantum dot body has a polymer coating layer on its outermost surface formed by the bonding of the methacryloyloxyethyl group with a reactive substituent of a polymer. TIFF2026076555000008.tif34166

A semiconductor nanoparticle, a method of preparing the semiconductor nanoparticle, and an electroluminescent device including the semiconductor nanoparticle. The method of preparing the semiconductor nanoparticle includes contacting a zinc precursor and a sulfur precursor in the presence of a first particle at a predetermined temperature to form a semiconductor nanocrystal layer containing zinc sulfide on the first particle, wherein the first particle includes a Group II-VI compound including zinc, selenium, and, optionally, tellurium, or the first particle includes a Group III-V compound including indium and phosphorus. The predetermined temperature includes (e.g., is) a temperature (e.g., a reaction temperature) of greater than 300 °C and less than or equal to about 380 °C, and the sulfur precursor includes a thiol compound of C3 (e.g. C9) to C50 or a combination thereof.

The present invention is a quantum dot body including a quantum dot that emits fluorescence by excitation light, the quantum dot body being characterized in that the quantum dot is composed of a core of a semiconductor nanoparticle and a shell of a semiconductor nanoparticle covering the core of the semiconductor nanoparticle, the surface of the quantum dot being coated with a metal oxide, the surface of the metal oxide is modified by a phosphonic acid derivative, and the outermost surface of the metal oxide is provided with a polymer coating layer formed by bonding a reactive substituent of the phosphonic acid derivative and a reactive substituent of a polymer. Thus, the present invention provides a quantum dot having improved stability while maintaining the fluorescence emission characteristics of the quantum dot. The present invention relates to: a quantum dot body having improved compatibility with a highly polar solvent and a photosensitive resin composition; a quantum dot composition in which the quantum dot body is dispersed in a resin material; a wavelength conversion material obtained by curing the quantum dot composition; and a method for producing the wavelength conversion material.

To provide a semiconductor nanoparticle composite body which can be dispersed in a polar dispersant with high mass fraction while maintaining a high fluorescence quantum efficiency (QY).SOLUTION: A semiconductor nanoparticle composite body according to one embodiment of the invention is a semiconductor nanoparticle composite body in which two or more kinds of ligands including an aliphatic thiol ligand and a polar ligand are coordinated to the surface of a semiconductor nanoparticle. The ligands are composed of an organic group and a coordinating group, and in the aliphatic thiol ligand, the organic group is an aliphatic hydrocarbon group and the coordinating group is a mercapto group, the polar ligand includes a hydrophilic functional group in the organic group, and the hydrophilic functional group includes at least one selected from a hydroxy group, a carboxy group, a carbonyl group, an amino group, an ether bond, an ester bond and a siloxane bond, and the mass ratio of the aliphatic thiol ligand to the polar ligand ((aliphatic thiol ligand) / (polar ligand)) is 0.05-1.00.SELECTED DRAWING: None

A semiconductor nanoparticle, a method of manufacturing the semiconductor nanoparticle, and an electronic device including the nanoparticle are provided. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, wherein the semiconductor nanoparticle is configured to emit a green light, wherein the semiconductor nanoparticle has a relative mole value of zinc as defined by Equation 1 that is greater than or equal to about 0.25 and less than or equal to about 0.9: Relativemolevalueofzinc=Zn / Ag+In+Ga+Zn wherein, in Equation 1, [Ag], [In], [Ga], and [Zn] are molar amounts of the silver, the indium, the gallium, and the zinc in the semiconductor nanoparticle, respectively, and wherein a mole ratio of gallium to indium is greater than about 2.5:1 and less than about 5.6:1.

A method of manufacturing a semiconductor nanoparticle, a semiconductor nanoparticle, an electroluminescent device including the semiconductor nanoparticle, and a display device. In an embodiment, a method of an embodiment includes: preparing a first semiconductor nanocrystal including zinc, tellurium, and selenium, where the preparation of the first semiconductor nanocrystal includes heating a first solution including a first zinc precursor, a first selenium precursor, and a tellurium precursor in a first organic solvent at a reaction temperature to form a heated solution; and adding an additive to the heated first solution to produce the first semiconductor nanocrystal, where the additive includes a second selenium precursor and the additive does not include tellurium, and the semiconductor nanoparticles are configured to emit blue light.

Electrical energy generation system with an assembly comprising: a light concentrating funnel; a multilayer photovoltaic cell; a thermos-electric layer: and a thermal stabilization device, wherein each layer of the multilayer photovoltaic cell contains: 5 semiconductor nanoparticles complexed with perovskite, an electrolyte, and a catalyst. The system assembly is arranged so as light can enter at a range of incidence angles at the light concentrating funnel, is directed and concentrated, then exits the light concentrating funnel and irradiates the multilayer photovoltaic cell where a voltage is generated, and the residual heat from these processes is stabilized with a thermal stabilization device.

An electroluminescent device and a method for making the device. The electroluminescent device includes a first electrode, a second electrode, a light emitting layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the light emitting layer and the second electrode, and an organic layer. The light emitting layer includes a semiconductor nanoparticle, the electron transport layer includes a metal oxide nanoparticle, and the metal oxide nanoparticles have sizes of 1 nm or more and 50 nm or less. The organic layer includes a polymer, and the polymer includes a repeat unit with a hydroxy group.

A nanoparticle, a method of manufacturing the nanoparticle, a composition including the nanoparticle, a composite including a matrix and a plurality of nanoparticles dispersed in the matrix, a display device including the nanoparticle, and an electronic device including the nanoparticle. The nanoparticle includes a semiconductor nanocrystal including zinc, indium, and selenium. In the semiconductor nanocrystal, a mole ratio of indium to selenium (In:Se) is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1. The nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light. A peak emission wavelength of the first light is greater than or equal to about 480 nanometers and less than or equal to about 700 nanometers.

Electrical energy generation system with an assembly comprising: a light concentrating funnel; a multilayer photovoltaic cell; a thermos-electric layer: and a thermal stabilization device, wherein each layer of the multilayer photovoltaic cell contains: 5 semiconductor nanoparticles complexed with perovskite, an electrolyte, and a catalyst. The system assembly is arranged so as light can enter at a range of incidence angles at the light concentrating funnel, is directed and concentrated, then exits the light concentrating funnel and irradiates the multilayer photovoltaic cell where a voltage is generated, and the residual heat from these processes is stabilized with a thermal stabilization device.

Provided are a semiconductor nanoparticle, a method for manufacturing the semiconductor nanoparticle, an ink composition including the semiconductor nanoparticle, a semiconductor nanoparticle composite including the semiconductor nanoparticle, a display device including the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. In the semiconductor nanoparticles, a molar ratio of gallium to indium (Ga: In) is greater than or equal to 20: 1 and less than or equal to 40: 1, and the semiconductor nanoparticles have a quantum yield of greater than or equal to 70% and less than or equal to 100%.

Rapid-darkening and wavelength-tunable photochromic compositions and systems are disclosed. Nanoparticles photochromically darken in response to incident light by photo-oxidizing a dopant to reversibly create an optically absorbing mid-gap electronic state. The wavelengths that trigger photochromic darkening as well as the absorbed wavelengths may be tuned by changing the nanoparticle composition, the nanoparticle size, and / or the dopant. The time for reversal of darkening may be tuned using hole-accepting ligands attached to the nanoparticles as well as hole-accepting molecules adjacent to the nanoparticles. Some variations provide a photochromic composition comprising: semiconductor nanoparticles, such as PbS or Ag2S, that have an average nanoparticle effective diameter from about 1 nanometer to about 20 nanometers; and transition-metal dopant particles capable of undergoing reversible oxidation and reduction. In the disclosed systems, there is an on / off switch for the photochromic function. Many photochromic uses are described.

A semiconductor nanoparticle, a method of producing the nanoparticle, and an electronic device including the same. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, where in the semiconductor nanoparticle, a mole ratio of gallium to indium (Ga:In) is greater than or equal to about 6.7:1 and less than or equal to about 40:1, a mole ratio of silver to indium (Ag:In) is greater than or equal to about 5:1 and less than or equal to about 30:1, the semiconductor nanoparticle is configured to emit light, and a full width at half maximum of a luminescent spectrum of the light is greater than or equal to about 10 nm and less than or equal to about 50 nm.

The present invention relates to a method for manufacturing a semiconductor nanoparticle, a semiconductor nanoparticle manufactured thereby, and an electronic device including the semiconductor nanoparticle. A method of manufacturing semiconductor nanoparticles includes: combining a first semiconductor nanocrystal comprising silver, a Group 13 element, and a chalcogen element with a gallium precursor, a sulfur precursor, and a silver compound in a medium comprising an organic solvent; and heating the medium to a reaction temperature to obtain a crude solution comprising semiconductor nanoparticles. The semiconductor nanoparticles include silver, indium, gallium, and sulfur, and the size of the semiconductor nanoparticles is greater than or equal to about 2 nm and less than or equal to about 50 nm.

These core / shell-type semiconductor nanoparticles each comprise: a core containing at least indium (In) and phosphorus (P); and a shell containing zinc (Zn) and sulfur (S) and / or selenium (Se). The core / shell-type semiconductor nanoparticles are characterized by: having stacking faults; containing a halogen; having a molar ratio of halogen to indium (In) of more than 15 but no more than 500 on an atomic basis; and having an average circularity of 0.820-1.000, which is found in a STEM image obtained by observation with a scanning transmission electron microscope. The present invention provides: core / shell-type semiconductor nanoparticles each comprising a core containing indium (In) and phosphorus (P) and a shell containing zinc (Zn) and sulfur (S) and / or selenium (Se); and a method for producing the same. With shells formed with high uniformity and having highly consistent shapes, the core / shell-type semiconductor nanoparticles exhibit a high luminous efficiency and a narrow FWHM even if stacking faults are present.

The present invention relates to a semiconductor nanoparticle composed of a compound containing Ag, Au, S and a metal M as essential constitutional elements. In the present invention, the metal M is at least any of Al, Ga, In, Tl, Zn, Cd, Hg and Cu, and the compound has a total content of Ag, Au, S and the metal M of 95 mass % or more. In addition, a ratio (x / (x+y)) of the number of atoms of Ag to a sum of the number of atoms of Ag, x, and the number of atoms of Au, y, in the AgAuS-based multicomponent compound is preferably 0.50 or more and 0.88 or less. The semiconductor nanoparticle of the present invention has appropriate emission and extinction characteristics and is biocompatible.

The present invention relates to semiconductor nanoparticles including an AgTeS compound containing Ag, Te, and S as essential constituent elements. The AgTeS compound forming the semiconductor nanoparticles is represented by the formula. In the formula, x, y, and z are respectively the numbers of Ag atoms, Te atoms, and S atoms and satisfy 0.5≤x / (x+y+z)≤0.7 and 0.3≤y / (y+z)≤0.99. The semiconductor nanoparticles according to the present invention include at least 90 at.% the AgTeS compound. The semiconductor nanoparticles according to the present invention have an absorption spectrum in which the longer-wavelength-side absorption-edge wavelength is 1,100 nm or longer. The semiconductor nanoparticles according to the present invention can emit light.

Provided is a method for producing core / shell semiconductor nanoparticles, the method being characterized by comprising a shell formation step in which intermediate particles of the core / shell semiconductor nanoparticles having a core particle and one or more shells, a dispersion medium, and a shell precursor are mixed and reacted, thereby forming a shell on at least part of the surface of the intermediate particles of core / shell semiconductor nanoparticles having a core particle and one or more shells, to obtain core / shell semiconductor nanoparticles, the method furthermore being characterized in that the dispersion medium contains benzyl alcohol and / or a substituted compound thereof. The present invention makes it possible to provide a method for producing core / shell semiconductor nanoparticles which is capable of increasing the quantum efficiency of the core / shell semiconductor nanoparticles.

A semiconductor nanoparticle, a method for manufacturing the semiconductor nanoparticle, an ink composition including the semiconductor nanoparticle, a semiconductor nanoparticle composite including the semiconductor nanoparticle, a display device including the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle are provided. In the semiconductor nanoparticle, a mole ratio (Ga / In) of gallium to indium is greater than or equal to about 20:1 and less than or equal to about 40:1, and the semiconductor nanoparticle has a quantum yield of greater than or equal to about 70% and less than or equal to about 100%.