20 results about "Semiconductor Nanoparticles" patented technology

Some variations provide a photochromic heterostructure comprising: first semiconductor nanoparticles that have an average first-nanoparticle effective diameter from 1 nanometer to 20 nanometers, wherein the first semiconductor nanoparticles are not doped; and second semiconductor nanoparticles that have an average second-nanoparticle effective diameter from 1 nanometer to 60 nanometers, wherein the second semiconductor nanoparticles are doped with one or more transition metals, wherein the second semiconductor nanoparticles have a bandgap energy that is higher than the bandgap energy of the first semiconductor nanoparticles, and wherein the first semiconductor nanoparticles and the second semiconductor nanoparticles are in physical contact with each other. The disclosed photochromic heterostructure is especially useful when lower-energy light excites lower-energy-bandgap first nanoparticles to cause higher-energy-bandgap, doped second nanoparticles to photodarken. If the first nanoparticles were not present, the doped second nanoparticles would require higher-energy light to cause darkening. Examples demonstrate embodiments of the invention.

An electroluminescent device, a method for manufacturing semiconductor nanoparticles, and a display device are provided. An electroluminescent device of an embodiment includes: a first electrode and a second electrode spaced apart from each other; and a light emitting layer disposed between the first electrode and the second electrode and including semiconductor nanoparticles configured to emit blue light having a peak emission wavelength of greater than or equal to about 440 nm and less than or equal to about 480 nm, the semiconductor nanoparticles including zinc, tellurium, selenium, and sulfur, the semiconductor nanoparticles also include a metal dopant, and the metal dopant includes aluminum, gallium, zirconium, hafnium, magnesium, or a combination thereof.

A semiconductor nanoparticle, a method for preparing the semiconductor nanoparticle, an ink composition including the semiconductor nanoparticle, an electroluminescent device, and a display device including the semiconductor nanoparticle. The semiconductor nanoparticle is configured to emit light and includes a semiconductor nanocrystal and a semiconductor nanocrystal layer including zinc and sulfur. The semiconductor nanoparticle further includes a first compound and a second compound. The first compound includes a first functional group and an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a terminal double bond. The second compound includes a second functional group and an aliphatic hydrocarbon group. The first functional group and the second functional group each independently include a carboxylic acid or its anion.

The objective is to provide quantum dot bodies that maintain the fluorescence emission properties of quantum dots while further improving stability and compatibility with highly polar solvents and photosensitive resin compositions. [Solution] A quantum dot body comprising a quantum dot that emits fluorescence upon excitation light, wherein the quantum dot comprises a core of semiconductor nanoparticles and a shell of semiconductor nanoparticles covering the core of the semiconductor nanoparticles, the surface of the quantum dot is coated with a metal oxide, the surface of the metal oxide is modified with a compound having a methacryloyloxyethyl group and a hydrophilic group represented by the following formula (I) (where R1 represents a hydrophilic group), and the quantum dot body has a polymer coating layer on its outermost surface formed by the bonding of the methacryloyloxyethyl group with a reactive substituent of a polymer. TIFF2026076555000008.tif34166

The present invention is a quantum dot body including a quantum dot that emits fluorescence by excitation light, the quantum dot body being characterized in that the quantum dot is composed of a core of a semiconductor nanoparticle and a shell of a semiconductor nanoparticle covering the core of the semiconductor nanoparticle, the surface of the quantum dot being coated with a metal oxide, the surface of the metal oxide is modified by a phosphonic acid derivative, and the outermost surface of the metal oxide is provided with a polymer coating layer formed by bonding a reactive substituent of the phosphonic acid derivative and a reactive substituent of a polymer. Thus, the present invention provides a quantum dot having improved stability while maintaining the fluorescence emission characteristics of the quantum dot. The present invention relates to: a quantum dot body having improved compatibility with a highly polar solvent and a photosensitive resin composition; a quantum dot composition in which the quantum dot body is dispersed in a resin material; a wavelength conversion material obtained by curing the quantum dot composition; and a method for producing the wavelength conversion material.

A nanoparticle, a method of manufacturing the nanoparticle, a composition including the nanoparticle, a composite including a matrix and a plurality of nanoparticles dispersed in the matrix, a display device including the nanoparticle, and an electronic device including the nanoparticle. The nanoparticle includes a semiconductor nanocrystal including zinc, indium, and selenium. In the semiconductor nanocrystal, a mole ratio of indium to selenium (In:Se) is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1. The nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light. A peak emission wavelength of the first light is greater than or equal to about 480 nanometers and less than or equal to about 700 nanometers.

Electrical energy generation system with an assembly comprising: a light concentrating funnel; a multilayer photovoltaic cell; a thermos-electric layer: and a thermal stabilization device, wherein each layer of the multilayer photovoltaic cell contains: 5 semiconductor nanoparticles complexed with perovskite, an electrolyte, and a catalyst. The system assembly is arranged so as light can enter at a range of incidence angles at the light concentrating funnel, is directed and concentrated, then exits the light concentrating funnel and irradiates the multilayer photovoltaic cell where a voltage is generated, and the residual heat from these processes is stabilized with a thermal stabilization device.

Provided are a semiconductor nanoparticle, a method for manufacturing the semiconductor nanoparticle, an ink composition including the semiconductor nanoparticle, a semiconductor nanoparticle composite including the semiconductor nanoparticle, a display device including the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. In the semiconductor nanoparticles, a molar ratio of gallium to indium (Ga: In) is greater than or equal to 20: 1 and less than or equal to 40: 1, and the semiconductor nanoparticles have a quantum yield of greater than or equal to 70% and less than or equal to 100%.

Rapid-darkening and wavelength-tunable photochromic compositions and systems are disclosed. Nanoparticles photochromically darken in response to incident light by photo-oxidizing a dopant to reversibly create an optically absorbing mid-gap electronic state. The wavelengths that trigger photochromic darkening as well as the absorbed wavelengths may be tuned by changing the nanoparticle composition, the nanoparticle size, and / or the dopant. The time for reversal of darkening may be tuned using hole-accepting ligands attached to the nanoparticles as well as hole-accepting molecules adjacent to the nanoparticles. Some variations provide a photochromic composition comprising: semiconductor nanoparticles, such as PbS or Ag2S, that have an average nanoparticle effective diameter from about 1 nanometer to about 20 nanometers; and transition-metal dopant particles capable of undergoing reversible oxidation and reduction. In the disclosed systems, there is an on / off switch for the photochromic function. Many photochromic uses are described.

These core / shell-type semiconductor nanoparticles each comprise: a core containing at least indium (In) and phosphorus (P); and a shell containing zinc (Zn) and sulfur (S) and / or selenium (Se). The core / shell-type semiconductor nanoparticles are characterized by: having stacking faults; containing a halogen; having a molar ratio of halogen to indium (In) of more than 15 but no more than 500 on an atomic basis; and having an average circularity of 0.820-1.000, which is found in a STEM image obtained by observation with a scanning transmission electron microscope. The present invention provides: core / shell-type semiconductor nanoparticles each comprising a core containing indium (In) and phosphorus (P) and a shell containing zinc (Zn) and sulfur (S) and / or selenium (Se); and a method for producing the same. With shells formed with high uniformity and having highly consistent shapes, the core / shell-type semiconductor nanoparticles exhibit a high luminous efficiency and a narrow FWHM even if stacking faults are present.

The present invention relates to semiconductor nanoparticles including an AgTeS compound containing Ag, Te, and S as essential constituent elements. The AgTeS compound forming the semiconductor nanoparticles is represented by the formula. In the formula, x, y, and z are respectively the numbers of Ag atoms, Te atoms, and S atoms and satisfy 0.5≤x / (x+y+z)≤0.7 and 0.3≤y / (y+z)≤0.99. The semiconductor nanoparticles according to the present invention include at least 90 at.% the AgTeS compound. The semiconductor nanoparticles according to the present invention have an absorption spectrum in which the longer-wavelength-side absorption-edge wavelength is 1,100 nm or longer. The semiconductor nanoparticles according to the present invention can emit light.

Provided is a method for producing core / shell semiconductor nanoparticles, the method being characterized by comprising a shell formation step in which intermediate particles of the core / shell semiconductor nanoparticles having a core particle and one or more shells, a dispersion medium, and a shell precursor are mixed and reacted, thereby forming a shell on at least part of the surface of the intermediate particles of core / shell semiconductor nanoparticles having a core particle and one or more shells, to obtain core / shell semiconductor nanoparticles, the method furthermore being characterized in that the dispersion medium contains benzyl alcohol and / or a substituted compound thereof. The present invention makes it possible to provide a method for producing core / shell semiconductor nanoparticles which is capable of increasing the quantum efficiency of the core / shell semiconductor nanoparticles.

A semiconductor nanoparticle, a method for manufacturing the semiconductor nanoparticle, an ink composition including the semiconductor nanoparticle, a semiconductor nanoparticle composite including the semiconductor nanoparticle, a display device including the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle are provided. In the semiconductor nanoparticle, a mole ratio (Ga / In) of gallium to indium is greater than or equal to about 20:1 and less than or equal to about 40:1, and the semiconductor nanoparticle has a quantum yield of greater than or equal to about 70% and less than or equal to about 100%.

Various embodiments disclosed relate to a sensor assembly probe for determining enzymatic activity. The sensor assembly probe includes an aqueous medium including one or more fluorescent hydrophobic semi-conductive nanoparticles dispersed therein. The assembly further includes an ionic polymer coating at least a portion of a surface of the one or more fluorescent hydrophobic semi-conductive nanoparticles. The assembly further includes a substrate for an enzyme, the substrate disposed between at least two of the one or more fluorescent hydrophobic semi-conductive nanoparticles, the substrate including at least ionic group.

The present invention relates to semiconductor nanoparticles comprising a multicomponent AgAu chalcogen compound containing Ag, Au, a chalcogen element, a metal M1, and a metal M2. The chalcogen element of the AgAu chalcogen compound is at least one of S, Se, and Te, the metal M1 is at least one of In, Al, Ga, Tl, Cd, Hg, and Cu, and the metal M2 is Zn. The metal M1 contributes to improvement of optical semiconductor characteristics of the AgAu chalcogen compound, and Zn, which is the metal M2, has an effect of improving durability to hydrophilization treatment. The semiconductor nanoparticles according to the present invention may each have a double-shell structure having the AgAu chalcogen compound serving as a core, and first and second shells containing the metal M1 and the metal M2, respectively. These semiconductor nanoparticles have suitable optical semiconductor characteristics and durability, and are suppressed in damage and characteristic change during the hydrophilization treatment.

An ink composition according to an embodiment of the present invention, comprising: a volatile solvent; and dispersed in the volatile solvent, a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands, wherein a ratio by mass of the semiconductor nanoparticles to the volatile solvent is greater than 1:1. A product according to an embodiment of the present invention comprising: a solid substrate; and arranged on the solid substrate, a dried residue of an ink composition, the dried residue comprising a plurality of semiconductor nanoparticles arranged without an intervening polymer matrix, wherein the a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands.

Methods for manufacturing semiconductor nanoparticles, semiconductor nanoparticles, electronic devices, methods for manufacturing electronic devices, ink compositions, and semiconductor nanoparticle composites are provided. The method for manufacturing semiconductor nanoparticles includes: combining a first semiconductor nanocrystal comprising silver, group 13 elements, and chalcogenides, or a first particle comprising the first semiconductor nanocrystal, a sulfur precursor, and a gallium precursor in a medium comprising an organic solvent; and heating the medium to a reaction temperature to form a second semiconductor nanocrystal comprising sulfur and gallium on the first semiconductor nanocrystal or the first particle. The method further includes adding an acid compound to the medium, wherein the acid compound has a dipole moment greater than or equal to about 2 Debyes and less than or equal to about 5 Debyes.

The application discloses nanoparticles, a film and a photoelectric device, the nanoparticles comprising: inorganic semiconductor nanoparticles, and a shell layer coated on at least part of the inorganic semiconductor nanoparticles, the material of the shell layer comprising a first metal selected from one or more of a group IA metal, a group IIA metal, a group IIIA metal, a group IVA metal, a group VA metal and a transition metal, the nanoparticles having good solution processing performance, performance stability and conductivity, and the nanoparticles can be used for preparing the photoelectric device, and are beneficial to improving the performance stability of the photoelectric device.

The application belongs to the technical field of semiconductor photocatalyst preparation, and particularly relates to application of a polymer microsphere with optical whispering gallery mode resonance characteristics in preparation of a photocatalyst, wherein the polymer microsphere with optical whispering gallery mode resonance characteristics is used as a carrier for the first time, and semiconductor nanoparticles are loaded on the surface of the polymer microsphere for preparation of the photocatalyst; the optical whispering gallery mode resonance characteristics of the surface of the polymer microsphere are used to confine photons in the polymer microsphere for a long time through continuous total internal reflection, to enhance the interaction between light and the semiconductor nanoparticles in a full spectrum, and to form an evanescent field on the surface of the polymer microsphere, so that the semiconductor nanoparticles are loaded on the surface of the polymer microsphere, the enhanced light field can be fully utilized, the purpose of enhancing the photocatalytic effect of the semiconductor nanoparticles is achieved, the photocatalytic system is compatible with different semiconductor catalytic systems, has high universality, and provides a new idea for improving the light capture efficiency of the photocatalytic system.

To provide a semiconductor nanoparticle which has improved light absorption characteristics in a long wavelength region and can suitably cope with a near infrared region and a short wave infrared region.SOLUTION: The present invention relates to a semiconductor nanoparticle containing an AgTeS compound composed of Ag, Te, and S as essential constituent elements. The AgTeS compound constituting the semiconductor nanoparticles is represented by the following formula. The semiconductor nanoparticles according to the present invention contain 90 atom% or more of the AgTeS compound. The long-wavelength-side absorption-edge wave length is equal to or longer than 1100nm. In addition, the semiconductor nanoparticles according to the present invention can also emit light. (In the formula, x, y, and z are the numbers of atoms of Ag, Te, and S, and 0.5 ≤ x / (x + y + z) ≤ 0.7.). In addition, 0.3 ≤ y / (y + z) ≤ 0.99. ) SELECTED DRAWING: Figure 2