47results about How to "High photoluminescence efficiency" patented technology

Semiconductor nanoparticles are doped with paramagnetic ions to serve as dual-mode optical and magnetic resonance imaging (MRI) contrast agents. These nanoparticles can be constructed in smaller diameters than typical MRI agents. The dual-modality nature allows the particles to be used for in vivo imaging by MRI, and then followed by histology with optical imaging techniques.

Bidentate ligand, iridium complex and electro-generated phosphorescent device of iridium complex are disclosed. The bidentate contains cavity transmission group carbazole, the chemical formula of the iridium complex is Ir(C^N)2 (acac), acac= acetyl acetone. The electro-luminescent device consists of conductive glass lining bottom, cavity injecting layer, luminescent layer and cathodic layer. The doping material of luminescent layer is iridium complex of bidentate ligand. Its advantages include to balance transmission ability of current carrier, and to improve brightness and efficiency of device for organic electro-luminescent domain.

The present invention relates to a beta-diketone ligand and its europium coordination compound and europium coordination compound electroluminescent device. The ligand is the transmission group with carrier, for example, beta-diketone ligand of carbazyl or oxazolyl, and the chemical formula of europium coordination compound is Eu(DBM)n(R-DBM)3-nBath, n=1.2, Bath=4,7-diphenyl-1,10-o-phenan-throline. The electroluminescent device includes conductive glass substrate layer, hole transmission layer, luminous layer and cathode layer, and the luminous material of luminous layer adopts the above-mentioned europium coordination compound.

The invention discloses high-performance luminescent polyimide, and a preparation method and an application thereof. The polyimide material is prepared through reacting aromatic diamine with aggregation-induced luminescence (enhanced) characteristics and various dianhydrides as raw materials to obtain a polyamide acid solution and then carrying out imidization. The polyimide has an obvious aggregation-induced luminescence (enhanced) effect, high luminous intensity, high glass-transition temperature and thermal stability and excellent mechanical properties, and is suitable for preparation of luminescent layer materials in photoluminescent products and flexible electroluminescent devices.

The disclosed bidentate ligand contains halogen atom and bases on 2-phenyl benzothiazole. Wherein, the opposite iridium complex has chemical formula as Ir(C Lambda N)2(acac) with C Lambda N as the ligand here and acac as acetylacetone anion. The opposite electroluminescent device based on the iridium complex comprises: a conductive glass substrate layer, a hole conduction layer, a luminescent layer, an electronic layer, a barrier layer for hole and exciton, and a cathode layer. Compared with prior art, this invention improves the brightness and efficiency of device, can adjust wavelength, and has wide application.

The invention relates to a low-temperature doped perovskite thin film with high photoluminescence quantum yield and a preparation method thereof. Low-temperature precursor liquid metal lanthanum ion doping is adopted, and the perovskite thin film with the high fluorescence quantum yield can be obtained without high-temperature injection and insulation ligand auxiliary crystallization. For perovskite with different band gaps, metal lanthanum ion doping can be carried out, and red, green and blue three-primary-color fluorescence emission can be basically obtained under 365 nm laser excitation. According to the method, in a relatively low-temperature environment, through temperature gradient annealing and solvent atmosphere annealing, the prepared perovskite crystal is higher in quality and fewer in defects, and a non-radiative composite path is effectively inhibited. The prepared perovskite thin film has a good application prospect in the field of semiconductor luminescence, and the efficient and simple preparation method of the perovskite thin film has great potential for commercial application of perovskite materials.

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe₂). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

The invention discloses a manufacturing method of a manganese-ion doped cesium lead chloride high-stability perovskite quantum dot white light-emitting diode inlaid in a zeolite. The method comprisestwo steps of firstly, carrying out ion exchange on Cs<+> ions and entering into the zeolite based on the synthetic zeolite; then, reacting with PbCl2 dissolved in an organic solvent; using the two independent steps to prevent cation repulsion so that Cs<+> and Pb<2 +> are combined together; and finally, obtaining a pure Mn: CsPbCl3 perovskite quantum dot composite material embedded in the zeolite,and coating on a bluish violet light-emitting small lamp bead through combining with a green fluorescent powder to obtain a white perovskite quantum dot photoluminescence device. Stability of perovskite quantum dots is greatly improved, losses of a device are reduced, usage of toxic element lead is reduced by replacing Pb<2+> by Mn<2+>, and photoluminescence efficiency is improved so that the perovskite quantum dots are well developed towards a green and environment-friendly direction.

A manufacturing method of a photo-induced enhanced quantum dot film comprises the following steps of: S1, providing a quantum dot base film, the quantum dot base film being an acrylic resin film containing quantum dots; S2, coating the quantum dot base film with a micron-sized silicon dioxide particle layer; S3, coating the quantum dot base film with acrylate glue; and S4, carrying out electron beam treatment on the quantum dot base film. The silicon dioxide microspheres dispersed on the surface of the base film can effectively generate total internal reflection, so that the photoluminescenceefficiency of the quantum dot base film is improved. Meanwhile, the quantum dot film has excellent water and oxygen isolation and wear resistance performances.

The invention discloses a photoresist-free photoinduced patterning method of a quantum dot film, and the method comprises the following steps: a, dispersing quantum dots in a non-polar solvent, and adding photosensitive crosslinking molecules to prepare a film; b, exposing the film obtained in the step a under the irradiation of 365 nm ultraviolet light, and carrying out a cross-linking reaction;c, performing eluting by adopting a non-polar solvent to remove the quantum dots in the exposure area which is not irradiated by the ultraviolet light to obtain the patterned quantum dot film. The method provided by the invention is universally applicable to patterning of various quantum dot films with different components, properties and structures; the pattern resolution can reach below 10 microns; the resolution ratio is similar to that of a traditional photoetching technology and is superior to that of a quantum dot thin film obtained through a printing method, and the obtained thin film containing red, green and blue quantum dots of different colors has high photoluminescence efficiency and can be applied to display devices such as LEDs and other photoelectric devices based on quantumdots.

The invention discloses an SFTS recombinant NP protein nano-particle based immunological detection method. The method comprises the following specific detection steps: (1) respectively labeling SFTS recombinant NP protein for coating by using UCNPs, and then adding phytohemagglutinin diluent of 0.02-0.06 mg/ml to prepare detection analysis liquid; (2), uniformly mixing to-be-detected serum with the detection analysis liquid at a ratio of 1 : 1, and adding a mixed liquid of 100 microlitres to sample application holes of a detection card; (3), detecting the mixed liquid in step (2) by utilizinga fluorescence scanning detector to calculate the error; (4), based on the normal step (3), detecting 100 parts of healthy human serum by utilizing a fluorescence immunochromatographic assay method; and (5), transmitting the detection result in the step (5) to a single-chip computer controller to read T/C value, and calculating an average value (A), a standard deviation (SD) and a Cutoff value. The SFTS recombinant NP protein nano-particle based immunological detection method has the advantages of high detection speed, accurate data processing, high practicability, convenience in production and wide popularization and application.

The invention discloses a quantum dot LED atmosphere lamp manufacturing method and a safe driving auxiliary lighting system. The quantum dot LED atmosphere lamp manufacturing method comprises an image acquisition unit, an image processing unit and an adjusting unit. The image acquisition unit is composed of a CMOS camera with infrared enhancement and can acquire real-time face images in a dark environment. The image processing unit is composed of a chip capable of performing rapid image processing, and is used for analyzing the image acquired by the image acquisition unit and judging whether the driver in the face image is in a fatigue state or not; the adjusting unit is composed of a plurality of atmosphere lamps integrated with quantum dot LEDs and used for judging the light color of the atmosphere lamps according to the result of the image processing unit. According to the invention, the novel luminescent material is utilized, the luminescent wavelength is accurately regulated and controlled, the wavelength of the LED lamp bead is ensured to be within the most effective range, and compared with the traditional material, the synthetic process is easier, the photoluminescence efficiency is higher, and the energy-saving performance is more excellent.