47results about How to "High photoluminescence efficiency" patented technology

Semiconductor nanoparticles are doped with paramagnetic ions to serve as dual-mode optical and magnetic resonance imaging (MRI) contrast agents. These nanoparticles can be constructed in smaller diameters than typical MRI agents. The dual-modality nature allows the particles to be used for in vivo imaging by MRI, and then followed by histology with optical imaging techniques.

Bidentate ligand, iridium complex and electro-generated phosphorescent device of iridium complex are disclosed. The bidentate contains cavity transmission group carbazole, the chemical formula of the iridium complex is Ir(C^N)2 (acac), acac= acetyl acetone. The electro-luminescent device consists of conductive glass lining bottom, cavity injecting layer, luminescent layer and cathodic layer. The doping material of luminescent layer is iridium complex of bidentate ligand. Its advantages include to balance transmission ability of current carrier, and to improve brightness and efficiency of device for organic electro-luminescent domain.

The invention provides a method for preparing luminescent band gap tunable double-light emitting manganese-doping perovskite nano-crystal, and belongs to the technical field of material preparation. The method comprises: firstly mixing cesium carbonate, oleic acid, and octadecene, obtaining a cesium oleate precursor solution; mixing lead bromide, oleylamine, oleic acid and octadecene, obtaining alead bromide precursor solution; mixing lead chloride, manganese chloride, and octadecene, obtaining a first mixed solution; adding oleylamine, oleic acid, and tri-n-octylphosphine to the first mixedsolution, obtaining a second mixed solution; adding the cesium oleate precursor solution to the second mixed solution, to obtain Mn:CsPbCl3 nano-crystal solution; injecting the lead bromide precursorsolution to the Mn:CsPbCl3 nano-crystal solution, and stirring, preparing Mn:CsPbCl3-xBrx nano-crystals, wherein X is greater than 0 but less than 3. By adopting the method provided by the invention,the luminescent band gap of the manganese-doping perovskite nanocrystals and continuous tuning of the corresponding illuminating color are realized through anion exchange.

The invention provides a core-shell quantum dot and a preparation method thereof as well as an electroluminescent device comprising the core-shell quantum dot. A core of the core-shell quantum dot isCdSeXS(1-X) and a shell layer of the quantum dot comprises a first shell layer and a second shell layer; the first shell layer is selected from one or more of ZnSe, ZnSeYS(1-Y) and Cd(Z)Zn(1-Z)S; thesecond shell layer which covers the first shell is Cd(Z)Zn(1-Z)S or ZnS; the maximum emission peak value of the core-shell quantum dot is less than or equal to 480nm, and X, Y and Z are all greater than 0 and less than 1. The bandwidth of a CdSeXS(1-X) core is relatively small and a HOMO energy level is relatively shallow, so that the core-shell quantum dot is easily injected into a hole; the material energy band of the first shell layer is located between the core and the second shell layer, so that the defects of the core are reduced and the photoluminescence efficiency of the quantum dot isimproved; the carrier injection potential barrier is reduced, and the efficiency and service life of an external quantum are improved; the quantum dot is passivated by the second shell layer, that the stability of a whole body is improved.

The present invention discloses an organic electroluminescent device, and the device comprises a light emitting layer comprising a main material and dye, wherein the doping mass concentration of the dye in the light emitting layer is 1% - 60%. At least one of the dye and the main material has the compound which has the structure shown in the formula I (shown in the description), wherein at most two of R1-R5 are H, and the others are electron-donating groups. The light emitting layer employs a brand-new thermal activation delay fluorescent material, and the single triplet energy level of the material is less than 0.3eV. The material can effectively emit delayed fluorescence, and is high in photoluminescence efficiency. Meanwhile, the material is good in stability, so a high-efficiency and long-service-life thermal activation delay fluorescent device can be obtained.

The present invention relates to a beta-diketone ligand and its europium coordination compound and europium coordination compound electroluminescent device. The ligand is the transmission group with carrier, for example, beta-diketone ligand of carbazyl or oxazolyl, and the chemical formula of europium coordination compound is Eu(DBM)n(R-DBM)3-nBath, n=1.2, Bath=4,7-diphenyl-1,10-o-phenan-throline. The electroluminescent device includes conductive glass substrate layer, hole transmission layer, luminous layer and cathode layer, and the luminous material of luminous layer adopts the above-mentioned europium coordination compound.

The invention discloses a flexible lighting polyimide film as well as a preparation method and application thereof. A polyimide material is prepared by carrying out reaction on 1,2,4-triazole aromatic diamine of a strong-sucking electronic structure and various dianhydrides to obtain a polyamide acid liquid, and then carrying out imidization and coating. The flexible lighting polyimide film disclosed by the invention is high in photoluminescence efficiency, high in glass-transition temperature and thermal stability, excellent in mechanical property and the like, and is applicable to preparation of luminous layer materials in a photoluminescence product and a flexible electroluminescence element.

The invention discloses a Te-doped Cs2ZrCl6 perovskite derivative material and a preparation method and application thereof, and the Te-doped Cs2ZrCl6 perovskite derivative material is prepared by taking a cesium-containing compound, a zirconium-containing compound and a tellurium-containing compound as reaction reagents and taking concentrated hydrochloric acid as a solution. And the influence ofthe tellurium doping amount on the luminous efficiency is explored. The Te-doped Cs2ZrCl6 perovskite derivative material prepared by adopting a solvothermal method is good in crystallinity, stable instructure, simple and convenient in preparation process, capable of being rapidly synthesized on a large scale and high in luminous efficiency. The problem of toxicity of lead-based perovskite is effectively solved by replacing lead with zirconium; the fluorescent powder can realize 575nm broadband yellow light emission under the excitation of ultraviolet light. Good application prospects are realized in the fields of illumination, display, projection, LEDs, fluorescent probes and the like.

The invention discloses high-performance luminescent polyimide, and a preparation method and an application thereof. The polyimide material is prepared through reacting aromatic diamine with aggregation-induced luminescence (enhanced) characteristics and various dianhydrides as raw materials to obtain a polyamide acid solution and then carrying out imidization. The polyimide has an obvious aggregation-induced luminescence (enhanced) effect, high luminous intensity, high glass-transition temperature and thermal stability and excellent mechanical properties, and is suitable for preparation of luminescent layer materials in photoluminescent products and flexible electroluminescent devices.

The disclosed bidentate ligand contains halogen atom and bases on 2-phenyl benzothiazole. Wherein, the opposite iridium complex has chemical formula as Ir(C Lambda N)2(acac) with C Lambda N as the ligand here and acac as acetylacetone anion. The opposite electroluminescent device based on the iridium complex comprises: a conductive glass substrate layer, a hole conduction layer, a luminescent layer, an electronic layer, a barrier layer for hole and exciton, and a cathode layer. Compared with prior art, this invention improves the brightness and efficiency of device, can adjust wavelength, and has wide application.

The invention relates to a low-temperature doped perovskite thin film with high photoluminescence quantum yield and a preparation method thereof. Low-temperature precursor liquid metal lanthanum ion doping is adopted, and the perovskite thin film with the high fluorescence quantum yield can be obtained without high-temperature injection and insulation ligand auxiliary crystallization. For perovskite with different band gaps, metal lanthanum ion doping can be carried out, and red, green and blue three-primary-color fluorescence emission can be basically obtained under 365 nm laser excitation. According to the method, in a relatively low-temperature environment, through temperature gradient annealing and solvent atmosphere annealing, the prepared perovskite crystal is higher in quality and fewer in defects, and a non-radiative composite path is effectively inhibited. The prepared perovskite thin film has a good application prospect in the field of semiconductor luminescence, and the efficient and simple preparation method of the perovskite thin film has great potential for commercial application of perovskite materials.

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

The invention discloses a quantum dot with a high blue light absorption rate and a preparation method of the quantum dot. The quantum dot comprises a nucleus which is sequentially coated with a firstshell and a second shell and comprises CdZnSeS, the first shell is made of In2S3, and the second shell is made of ZnS. The outside of the quantum dot is coated with the In2S3, the blue exciting lightabsorption capacity of the quantum dot can be improved, self-absorption of the quantum dot under large concentration is reduced, the luminous intensity of the quantum dot is increased, energy consumption is reduced, high blue exciting light absorption capacity is ensured, the dosage of the quantum dot is reduced, and the quantum dot has low cadmium content and high blue light absorption rate. Besides, the content of heavy metal can be reduced, environmental pollution is decreased, production cost is reduced, and a thin quantum dot film with high brightness and pure colors is acquired and moresuitable for photoluminescence related application taking blue light as an exciting light source.

The invention discloses a Mn-doped (Cs / K)3BiCl6 perovskite derivative material prepared by taking a cesium-containing compound, a manganese-containing compound, a potassium-containing compound and a bismuth-containing compound as reaction reagents and concentrated hydrochloric acid as a solution through a solvothermal method, and the influence of the Mn doping amount on the luminous efficiency is explored. The invention further provides a preparation method of the Mn-doped (Cs / K)3BiCl6 perovskite derivative material. The prepared Mn-doped (Cs / K)3BiCl6 perovskite derivative material is good in crystallinity, stable in structure, simple and convenient in preparation process, capable of being rapidly and massively synthesized and high in luminous efficiency. The toxicity problem of the lead-based perovskite is effectively solved by replacing lead with potassium and bismuth; and the fluorescent powder can realize emission of 603 nm broadband orange light under the excitation of ultraviolet light. The Mn-doped (Cs / K)3BiCl6 perovskite derivative material has good application prospects in the fields of illumination, display, projection, LEDs, fluorescent probes and the like.

The invention discloses an aftertreatment method for Sr2Si5N8: Eu<2+> fluorescent powder. The aftertreatment method comprises the following steps: pickling treatment, surfactant solution treatment, coating treatment and drying and ball milling treatment. Fluorescent powder processed by the aftertreatment method has very good dispersity and moisture resistance, can be used for preparing white-light LEDs, reduce the back scattering power and improve the light extraction ratio, and is simple in process, low in cost and in favor of industrial production.

The invention discloses a manufacturing method of a manganese-ion doped cesium lead chloride high-stability perovskite quantum dot white light-emitting diode inlaid in a zeolite. The method comprisestwo steps of firstly, carrying out ion exchange on Cs<+> ions and entering into the zeolite based on the synthetic zeolite; then, reacting with PbCl2 dissolved in an organic solvent; using the two independent steps to prevent cation repulsion so that Cs<+> and Pb<2 +> are combined together; and finally, obtaining a pure Mn: CsPbCl3 perovskite quantum dot composite material embedded in the zeolite,and coating on a bluish violet light-emitting small lamp bead through combining with a green fluorescent powder to obtain a white perovskite quantum dot photoluminescence device. Stability of perovskite quantum dots is greatly improved, losses of a device are reduced, usage of toxic element lead is reduced by replacing Pb<2+> by Mn<2+>, and photoluminescence efficiency is improved so that the perovskite quantum dots are well developed towards a green and environment-friendly direction.

The invention discloses a large-area perovskite light-emitting film and a light-emitting diode thereof. The large-area perovskite light-emitting film is highly compact and high in photoluminescence efficiency. According to a printing preparation method of the large-area perovskite light-emitting film, two key steps, namely solvent volatilization of a wet film and thermal annealing crystallization of a perovskite film can be separated through vacuum pretreatment, so that control over crystallization kinetics in the preparation process of the perovskite light-emitting film is achieved, and the problem that a uniform large-area perovskite light-emitting layer cannot be prepared through a traditional spin coating technology is solved. On the basis of the printing preparation process of the large-area perovskite light-emitting film, a large-area perovskite light-emitting diode with uniform light emitting and high external quantum efficiency is prepared, the process for preparing the light-emitting diode is simple in step, the limitation of the current preparation process (such as a spin-coating method and an anti-solvent extraction method) on the preparation size of the perovskite light-emitting diode is solved, and the large-area perovskite light-emitting diode with uniform luminous intensity is obtained.

The invention discloses a method for preparing rare earth ion-doped indium oxide (In2O3) quantum dots in an alcohol solvent system by a solvothermal method. According to the method, the rare earth ion-doped IN2O3 quantum dots are prepared by adding inorganic substances, such as indium acetate, acetic acid with rare earth ions or nitrate compounds, serving as raw materials into an alcohol solvent to react at a certain temperature through a hydrothermal kettle. The preparation method is simple, economic, environment-friendly, high in repeatability, and favorable to realize industrial scale production; and cumbersome and dangerous processes such as high-temperature calcining and combusting are avoided. The rare earth ion-doped IN2O3 quantum dots prepared by the method has very high water solubility and oil solubility, high light emitting performance, high optical stability, high biocompatibility, biological stability, and good application prospect in the aspects of biomarkers and functional materials such as display, illumination, optical communication and laser devices.

A manufacturing method of a photo-induced enhanced quantum dot film comprises the following steps of: S1, providing a quantum dot base film, the quantum dot base film being an acrylic resin film containing quantum dots; S2, coating the quantum dot base film with a micron-sized silicon dioxide particle layer; S3, coating the quantum dot base film with acrylate glue; and S4, carrying out electron beam treatment on the quantum dot base film. The silicon dioxide microspheres dispersed on the surface of the base film can effectively generate total internal reflection, so that the photoluminescenceefficiency of the quantum dot base film is improved. Meanwhile, the quantum dot film has excellent water and oxygen isolation and wear resistance performances.

The invention discloses a photoresist-free photoinduced patterning method of a quantum dot film, and the method comprises the following steps: a, dispersing quantum dots in a non-polar solvent, and adding photosensitive crosslinking molecules to prepare a film; b, exposing the film obtained in the step a under the irradiation of 365 nm ultraviolet light, and carrying out a cross-linking reaction;c, performing eluting by adopting a non-polar solvent to remove the quantum dots in the exposure area which is not irradiated by the ultraviolet light to obtain the patterned quantum dot film. The method provided by the invention is universally applicable to patterning of various quantum dot films with different components, properties and structures; the pattern resolution can reach below 10 microns; the resolution ratio is similar to that of a traditional photoetching technology and is superior to that of a quantum dot thin film obtained through a printing method, and the obtained thin film containing red, green and blue quantum dots of different colors has high photoluminescence efficiency and can be applied to display devices such as LEDs and other photoelectric devices based on quantumdots.

Bidentate ligand, iridium complex and electro-generated phosphorescent device of iridium complex are disclosed. The bidentate contains cavity transmission group carbazole, the chemical formula of the iridium complex is Ir(C^N)2 (acac), acac= acetyl acetone. The electro-luminescent device consists of conductive glass lining bottom, cavity injecting layer, luminescent layer and cathodic layer. The doping material of luminescent layer is iridium complex of bidentate ligand. Its advantages include to balance transmission ability of current carrier, and to improve brightness and efficiency of device for organic electro-luminescent domain.

The present invention provides a heat-induced delayed fluorescence compound and its preparation method and application. The compound provided by the present invention has a structure shown in formula (I). The present invention introduces a substituted aromatic group at the 1,8 positions of carbazole, and at the same time The other positions of the carbazole are supplemented with specific groups, so that the obtained compound has a small energy level difference between the first excited singlet state and the first excited triplet state, thereby realizing effective delayed fluorescence. Moreover, the photoluminescent efficiency of the compound is higher in the solid state, which is conducive to the full utilization of the triplet excitons. When the compound is applied to electroluminescent devices, it can break through the 5% external quantum efficiency limit of traditional fluorescent materials.

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

An electroluminescent material Tb(L1)3(L2)n is disclosed, where Tb is three-valence positive ion of Tb, Li is the organic chelating negative ion of pyrazolinone and L2 is neutral ligand. The device prepared from it is also disclosed. Their advantages are high brightness and high efficiency.

The invention relates to the field of a preparation technology of a functional nano material and application of the functional nano material to a photoelectric device, in particular to preparation of colloidal silicon nanocrystals (c-Si NCs) with high fluorescence quantum yield and application of the colloidal silicon nanocrystals (c-Si NCs) to an OLED (Organic Light Emitting Diode). According to the method, a block monocrystalline silicon wafer, an organic solvent and a hydrofluoric acid (HF) solution are mainly used for being mixed, the c-SiNCs with high fluorescence quantum efficiency, good surface functionalization and uniform dispersion are generated in one step through femtosecond laser liquid phase ablation, used consumables are low in cost, used reagents are non-toxic and free of strong corrosivity, and the c-SiNCs can be applied to the field of fluorescence imaging. The prepared c-Si NCs has the characteristics of no toxicity, high fluorescence quantum efficiency (as high as 78.5%), easiness in regulation and control of size distribution and light-emitting wavelength and the like. A c-Si NCs film is prepared from the prepared c-Si NCs solution through a one-step spin-coating method and applied to an OLED, and the external quantum efficiency can reach 7.2%. The process does not need complex chemical modification, is simple and easy to implement, has good repeatability, has good stability in amplification experiments, and is wide in industrial application prospect.

The invention discloses a flexible luminous polyimide film, a preparation method and application thereof. The polyimide material of the present invention adopts aromatic diamine with strong electron-withdrawing structure 1,2,4-triazole and various dianhydrides as raw materials, reacts to obtain polyamic acid solution, and then imidizes and coats prepared. The flexible polyimide film of the present invention not only has high photoluminescent efficiency, but also has high glass transition temperature and thermal stability, excellent mechanical properties, etc., and is suitable for preparing photoluminescent products and flexible electroluminescent devices luminescent layer material.

The disclosed bidentate ligand contains halogen atom and bases on 2-phenyl benzothiazole. Wherein, the opposite iridium complex has chemical formula as Ir(C Lambda N)2(acac) with C Lambda N as the ligand here and acac as acetylacetone anion. The opposite electroluminescent device based on the iridium complex comprises: a conductive glass substrate layer, a hole conduction layer, a luminescent layer, an electronic layer, a barrier layer for hole and exciton, and a cathode layer. Compared with prior art, this invention improves the brightness and efficiency of device, can adjust wavelength, and has wide application.

The invention discloses an SFTS recombinant NP protein nano-particle based immunological detection method. The method comprises the following specific detection steps: (1) respectively labeling SFTS recombinant NP protein for coating by using UCNPs, and then adding phytohemagglutinin diluent of 0.02-0.06 mg / ml to prepare detection analysis liquid; (2), uniformly mixing to-be-detected serum with the detection analysis liquid at a ratio of 1 : 1, and adding a mixed liquid of 100 microlitres to sample application holes of a detection card; (3), detecting the mixed liquid in step (2) by utilizinga fluorescence scanning detector to calculate the error; (4), based on the normal step (3), detecting 100 parts of healthy human serum by utilizing a fluorescence immunochromatographic assay method; and (5), transmitting the detection result in the step (5) to a single-chip computer controller to read T / C value, and calculating an average value (A), a standard deviation (SD) and a Cutoff value. The SFTS recombinant NP protein nano-particle based immunological detection method has the advantages of high detection speed, accurate data processing, high practicability, convenience in production and wide popularization and application.

The invention discloses a quantum dot LED atmosphere lamp manufacturing method and a safe driving auxiliary lighting system. The quantum dot LED atmosphere lamp manufacturing method comprises an image acquisition unit, an image processing unit and an adjusting unit. The image acquisition unit is composed of a CMOS camera with infrared enhancement and can acquire real-time face images in a dark environment. The image processing unit is composed of a chip capable of performing rapid image processing, and is used for analyzing the image acquired by the image acquisition unit and judging whether the driver in the face image is in a fatigue state or not; the adjusting unit is composed of a plurality of atmosphere lamps integrated with quantum dot LEDs and used for judging the light color of the atmosphere lamps according to the result of the image processing unit. According to the invention, the novel luminescent material is utilized, the luminescent wavelength is accurately regulated and controlled, the wavelength of the LED lamp bead is ensured to be within the most effective range, and compared with the traditional material, the synthetic process is easier, the photoluminescence efficiency is higher, and the energy-saving performance is more excellent.