Low-temperature doped perovskite thin film with high photoluminescence quantum yield and preparation method thereof

A quantum yield, perovskite technology, applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of low solubility, change stability, and high cost of all-inorganic perovskite, and achieve improved The effect of photoluminescence quantum yield, reducing solvent vapor pressure, and accelerating solvent volatilization

Active Publication Date: 2020-07-31
WUHAN UNIV
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Problems solved by technology

However, when it comes to the synthesis of quantum dots, the high cost caused by high temperature, the multi-step injection process is cumbersome, and the existence of insulating ligands with poor conductivity such as oleylamine affects the photoelectric properties of perovskite materials, etc.
In terms of metal doping, the doping of transition metals can change the stability of the material to a certain extent, but has no qualitative improvement in the luminous performance; the improvement of the luminous efficiency of pure inorganic perovskite brought about by a few lanthanide metals is due to its ion luminescence The peak position is coupled with the perovskite corresponding to the blue light emission, most of which come from the intrinsic luminescence of ions, and the solubility of all-inorganic perovskite is very low, and it is difficult to achieve high-performance luminescence without organic cations

Method used

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  • Low-temperature doped perovskite thin film with high photoluminescence quantum yield and preparation method thereof
  • Low-temperature doped perovskite thin film with high photoluminescence quantum yield and preparation method thereof
  • Low-temperature doped perovskite thin film with high photoluminescence quantum yield and preparation method thereof

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preparation example Construction

[0055] A perovskite film with low-temperature doping and high photoluminescence quantum yield and a preparation method thereof, comprising the following steps:

[0056] (1) Substrate preparation. In the present invention, a glass substrate is used. First, the substrate is cut into a suitable size (2cm×2cm), and then ultrasonically cleaned in an ultrasonic cleaner with deionized water, acetone, isopropanol, and absolute ethanol in sequence. 15min, and then dry it with nitrogen, and treat it for 15min in a UV cleaning ozone machine with a power of 40W to obtain a clean substrate.

[0057] (2) Prepare the precursor solution. Dissolving the halide salt M, lead halide, and lanthanum halide in the solvent S to obtain a precursor solution; stirring the precursor solution at a constant temperature for reaction, and then aging to obtain a perovskite doped lanthanum precursor solution;

[0058] (3) Film preparation. After filtering the perovskite-doped lanthanum precursor solution, s...

Embodiment 1

[0074] This embodiment provides a method for preparing a green fluorescent perovskite film.

[0075] According to above-mentioned step 1) in mode cleaning glass plate; FABr, CsBr, PbBr 2 , LaBr 3According to the molar ratio of 0.945:0.105:1:0.12, it is dissolved in 1.25ml of mixed solvent of DMSO and DMF with a volume ratio of 9:1, and the above weighing error is controlled within 0.1mg.

[0076] The perovskite thin film was prepared according to step 3) of the above specific embodiment, wherein the post-annealing temperature was 70°C. figure 2 It is a schematic diagram of gradient annealing and then solvent annealing in the preparation process of perovskite film. Gradient annealing prevents uneven nucleation and film cracks caused by too fast solvent volatilization. Solvent annealing method is used to recombine the crystallized small particle crystals. Growing up is conducive to the improvement of crystal quality. Solvent annealing specific operation see image 3 .

Embodiment 2

[0089] This embodiment provides a method for preparing a red fluorescent perovskite film.

[0090] According to the specific embodiment step 1) mode cleaning glass sheet; Weigh MAI, PbI 2 , DMSO, LaI 3 Add it to 1ml DMF at a molar ratio of 1:1:1:0.1, and the above weighing error should be controlled within 0.1mg. The perovskite thin film is prepared according to the method in step 3) of the above specific embodiment, wherein the post-annealing temperature needs to be set at 100° C., and other conditions remain unchanged.

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Abstract

The invention relates to a low-temperature doped perovskite thin film with high photoluminescence quantum yield and a preparation method thereof. Low-temperature precursor liquid metal lanthanum ion doping is adopted, and the perovskite thin film with the high fluorescence quantum yield can be obtained without high-temperature injection and insulation ligand auxiliary crystallization. For perovskite with different band gaps, metal lanthanum ion doping can be carried out, and red, green and blue three-primary-color fluorescence emission can be basically obtained under 365 nm laser excitation. According to the method, in a relatively low-temperature environment, through temperature gradient annealing and solvent atmosphere annealing, the prepared perovskite crystal is higher in quality and fewer in defects, and a non-radiative composite path is effectively inhibited. The prepared perovskite thin film has a good application prospect in the field of semiconductor luminescence, and the efficient and simple preparation method of the perovskite thin film has great potential for commercial application of perovskite materials.

Description

technical field [0001] The invention belongs to the field of nano material preparation and luminescence application, and mainly relates to a perovskite film with low-temperature doping and high photoluminescence quantum yield and a preparation method thereof. Background technique [0002] Perovskite materials have attracted the attention of many researchers due to their excellent properties such as fewer deep-level defects, long carrier lifetime, and large light absorption coefficient. Thanks to the rapid development of perovskite batteries, research has found that perovskite materials can be used not only in batteries, but also in light-emitting diodes. As the efficiency of perovskite cells increases from 3.9% to 24.2%, the efficiency of perovskite light-emitting diodes also increases from 0.76% to 28.2%, although there is a blessing from the light-coupling layer. In the case of the non-coupling light layer, it can also achieve an efficiency of more than 20% in the red and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48H01L51/50H01L51/52H01L51/54H01L51/56
CPCH10K71/12H10K71/40H10K30/10H10K30/80H10K50/00H10K50/80Y02E10/549Y02P70/50
Inventor 方国家刘永杰刘陈威
Owner WUHAN UNIV
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