The utility model relates to a packaging structure of a large-current
silicon-based mos tube, which comprises a packaging
assembly arranged on the back surface of a
transistor body, the packaging
assembly comprises a
ceramic substrate arranged on the back surface of the
transistor body, and a packaging sleeve shell is arranged on the outer side of the
ceramic substrate. According to the packaging structure of the large-current
silicon-based mos tube, the
ceramic substrate, the pin frame, the heat dissipation piece and other components are arranged in the packaging sleeve shell, an efficient heat dissipation path is formed, the
ceramic substrate is tightly attached to the
transistor body, heat can be rapidly absorbed and conducted to the soaking piece in the packaging sleeve shell, the soaking piece is matched with the heat dissipation plate, and therefore the heat dissipation efficiency is improved. According to the high-current
silicon-based MOS tube, heat is dissipated in a heat conduction and heat
convection mode, in addition, heat
convection is further enhanced through the design of the air guide grooves in the back face of the heat dissipation plate, the heat dissipation efficiency is improved, the problems that when the high-current silicon-based MOS tube processes
high current, due to poor heat dissipation, on-resistance is increased, and
thermal runaway is caused can be effectively solved, and the stability and reliability of the MOS tube are improved.