The utility model discloses a kind of
processing structures of inner insulation power
semiconductor discrete devices, it is related to the technical field of
semiconductor discrete devices.The utility model includes insulating sleeve and substrate, insulating sleeve includes support insulating layer, recess is opened in support insulating layer top,
chip is fixedly connected in recess inner wall, the bottom of
chip is fixedly connected with several pins, support insulating layer top is fixedly connected with several insulating columns close to
chip periphery, insulating column is set as hollow structure, several insulating column top is fixedly connected with covering insulating layer.By setting insulating sleeve, specifically is recess forms the double interface of physical support and
electrical isolation, insulating column avoids the charge accumulation of
solid insulating material interface, top covering insulating layer forms sealing, and forms three-dimensional insulating space, solve the
processing structure of existing inner insulation power
semiconductor discrete device generally adopts plane single-layer insulating layer design, the problem that uneven
electric field distribution easily leads to
partial discharge risk.