955 results about "Inductively coupled plasma" patented technology

The invention relates to the technical field of cross-modal data fusion analysis of soil component detection and improvement agent preparation, in particular to a preparation method of a soil improvement agent based on component detection, which comprises the following steps: acquiring soil component data through a near infrared spectrometer, a high performance liquid chromatograph and an inductively coupled plasma mass spectrometer; an incremental principal component analysis algorithm is combined with an oscillation suppression function to update a covariance matrix in real time, a dynamic defect factor priority list is generated, a multi-objective optimization model improved based on NSGA-II is guided to integrate the soil pH value, humidity and organic matter content to construct a dose response curved surface, and a Pareto optimal solution set is solved. A sensor array collects environment feedback data, drives a transfer learning algorithm to calibrate parameters, a dynamic incidence matrix attenuation rate and optimal weight adaptive adjustment, iteratively outputs a modifier synergistic effect solution set through a closed-loop control mechanism, and solves the problems of difficult data fusion, principal component weight offset and component synergistic deviation. And the proportioning accuracy and stability are improved.

The invention discloses a laser SLAM mapping positioning method and system in a dynamic environment. The method comprises the steps that point cloud information and IMU measurement data in the dynamic environment are collected; the data preprocessing module carries out pre-integration by using IMU data so as to remove point cloud distortion; the pose estimation module realizes positioning based on error Kalman filtering by using IMU measurement information and point cloud feature matching; the dynamic point filtering module stores the three-dimensional point cloud in a two-dimensional image mode, judges whether the three-dimensional point cloud is a dynamic point or not based on the change condition of the point cloud at the same pixel, and finally carries out clustering elimination to output the point cloud only containing a static scene; and the loopback detection module extracts descriptors based on the static scene point cloud, and corrects the pose deviation through ICP (Inductively Coupled Plasma) matching. According to the method, the problem that dynamic object interference occurs in the mapping positioning scene is effectively solved, the dynamic points do not interfere with positioning, the map does not contain ghosts generated by moving objects, help is provided for follow-up navigation and the like, and the robustness and accuracy of mapping positioning are improved.

The invention provides a superlattice infrared detector chip manufacturing method, and belongs to the technical field of infrared detector manufacturing. The problem that the product performance or the product yield is low due to the fact that the precision fluctuation of the photoetching technology when the hard mask is removed is not considered in the current hard mask removing scheme is solved; comprising the following steps: forming a hard mask: growing the hard mask with a certain thickness on the surface of a wafer made of a superlattice material; photoetching an upper electrode table top; etching a hard mask: taking the photoresist as a mask, and etching the hard mask by adopting an ICP (Inductively Coupled Plasma) technology to obtain an upper electrode mesa mask pattern; degumming and cleaning an upper electrode table board; photoetching a lower electrode table board: adopting photoresist as a mask of a lower electrode table board area, and manufacturing the lower electrode table board area through a photoetching technology; carrying out ICP etching on the table board; performing wet etching on the table board; degumming and cleaning a lower electrode table board; forming a passivation layer film; opening holes in the passivation layer; manufacturing a gold electrode; the method is applied to preparation of the superlattice infrared detector chip.

The invention discloses a plasma spraying preparation method for a micro-nano double-layer PTFE coating on the surface of a flexible shaft steel wire, and particularly relates to the technical field of functional materials.The plasma spraying preparation method comprises the following steps that 1, a mandrel and a steel wire are installed on twisting equipment, and an inductive coupling plasma torch tube is installed on a driving guide rail parallel to the mandrel; 2, the pickling solution serves as a raw material, the pickling solution is atomized into micro-droplets through a feeding system and an air supply system, the micro-droplets are rapidly sprayed out of the torch pipe, and pickling spray is formed; 3, the twisting equipment is started, the steel wire is twisted around the mandrel, meanwhile, the driving guide rail is started, the twisted steel wire is subjected to acid pickling treatment through acid pickling spray sprayed out of the torch pipe, and the surface of the steel wire is roughened; 4, feeding of the pickling solution is stopped, high-flow gas is introduced into the torch pipe through the gas supply system to form high-speed gas flow, and the residual pickling solution on the surface of the flexible shaft is blow-dried; and 5, starting an inductively coupled plasma spraying system, injecting the PTFE emulsion serving as a raw material into plasma flame flow, driving a guide rail to move to enable the plasma flame flow to scan the steel wire on the surface of the flexible shaft, and depositing a PTFE coating on the surface of the steel wire. According to the method disclosed by the invention, the double-layered PTFE coating is deposited on the surface of the steel wire by using an inductive coupling plasma spraying process for the first time in the flexible shaft steel wire twisting process, so that one-step rapid preparation of the anti-corrosion coating is realized.

The invention discloses an inductively coupled plasma mass spectrometer with an automatic sample injection structure, and particularly relates to the technical field of mass spectrometers, the inductively coupled plasma mass spectrometer comprises a mass spectrometer body, and a mounting table is mounted at the bottom of one side of the mass spectrometer body; a sample introduction disc is mounted on the mounting table, and a plurality of test tube bodies are limited on the sample introduction disc. According to the switching sampling mechanism, sampling work is completed on solutions in the test tube bodies when the sampling tube moves up and down, and the sampling disc is synchronously driven to complete active rotation switching when the sampling tube moves up and resets, so that continuous active switching sampling operation on the test tube bodies on the sampling disc is completed, the sampling efficiency is improved, and the sampling time is shortened. Manual operation of technicians is not needed, time and labor are saved, the shielding mechanism is additionally arranged on the sample introduction disc and used for shielding the tops of the multiple test tube bodies, external impurities are prevented from falling into the test tube bodies, meanwhile, the shielding mechanism and the sample introduction switching mechanism are linked, and the whole sampling work is safely and stably carried out.

The invention discloses a preparation method of a magic angle nano-cavity and a topological body cavity based on a quantum dot single photon source, and the method comprises the steps: carrying out the preprocessing of a substrate, and enabling the substrate to comprise a quantum dot layer, a substrate layer, and a sacrificial layer located between the quantum dot layer and the substrate layer; treating the pretreated substrate by adopting oxygen plasma; photoresist is spin-coated on the surface of the quantum dot layer of the substrate, exposure and development are carried out, and a pattern is formed on the surface of the photoresist; transferring the pattern on the photoresist to the quantum dot layer through etching; and removing the sacrificial layer by wet etching to prepare two photonic crystal cavities, namely a magic angle nano cavity and a topological body cavity. Through fine electron beam exposure dose control, precise inductively coupled plasma gas component and etching rate control and appropriate corrosive liquid concentration and time control, a high-stability and high-repeatability photonic crystal suspension cavity structure, namely a magic angle nano cavity and a topological body cavity, with a line width of 30-50 nm is realized.

A plasma chamber for a UV light source includes a plasma generation region that defines a plasma confinement region. A port is positioned adjacent to a side of the plasma generation region that allows generated light to pass out of the chamber. A high voltage region is coupled to the plasma generation region. A grounded region is coupled to the high voltage region that defines an outer surface configured to be coupled to the ground and is dimensioned for receiving a surrounding inductive core. A width of the high voltage region is greater than the width of the grounded region.

A plasma chamber for a UV light source includes a plasma generation region that defines a plasma confinement region. A port is positioned adjacent to a side of the plasma generation region that allows generated light to pass out of the chamber. A high voltage region is coupled to the plasma generation region. A grounded region is coupled to the high voltage region that defines an outer surface configured to be coupled to the ground and is dimensioned for receiving a surrounding inductive core. A width of the high voltage region is greater than the width of the grounded region.

The invention discloses a pantograph slide plate point cloud data splicing method and system based on a calibration block and an improved ICP algorithm, and the method specifically comprises the steps: firstly continuously outputting multi-frame slide plate contour data through a laser displacement sensor, and expanding the multi-frame slide plate contour data into three-dimensional point cloud data; processing the sliding plate data by adopting a hybrid filtering denoising algorithm to obtain a sliding plate contour data set, and converting two groups of laser point cloud data acquired by the two laser displacement sensors into the same coordinate system to form complete sliding plate surface point cloud data; thirdly, completing coarse registration on the sliding plate surface point cloud data by adopting a data rapid splicing method based on a calibration block; and finally, an improved ICP (Inductively Coupled Plasma) registration algorithm is adopted to complete rapid fine registration of the point cloud data to obtain complete sliding plate surface point cloud data. The method has high precision and real-time performance, can overcome the interference caused by the influence of the surface texture, color and dynamic measurement environment of the pantograph slide plate, and provides real-time data support for intelligent operation and maintenance of rail transit.

The invention provides an EML laser and a preparation method of an air bridge, belongs to the technical field of optical communication lasers, and is used for solving the problem that the stray capacitance of connecting metal between a waveguide electrode and a PAD electrode of the EML laser is too large. The preparation method of the air bridge process of the EML comprises the following steps: growing a mask layer on the surface of an epitaxial InP wafer, photoetching to form a ridge waveguide pattern, etching the mask layer by adopting ICP (Inductively Coupled Plasma), and removing photoresist; etching the ohmic contact layer by adopting ICP (Inductively Coupled Plasma) and removing the mask layer; gluing and photoetching the surface of the wafer to form a pier pattern; adopting ICPCVD to grow a dielectric film at low temperature; gluing and photoetching the surface of the wafer to form a dielectric film bridge pattern; carrying out ICP etching on the dielectric film and removing the bridge and pier photoresist to form a dielectric film bridge; and performing wet etching on the InP epitaxial layer to the etching stop layer. According to the method, the dielectric film bridge is built at the connecting metal between the waveguide electrode and the PAD electrode, the low dielectric constant characteristic of air is utilized, the distance between the metal and the quantum well is greatly increased, the stray capacitance of the EML is reduced, and the bandwidth is improved.

ICP-MS includes: an ion source to ionize a sample component; a vacuum chamber (4-into which generated ions are introduced; a cell inside the vacuum chamber to bring the ions into contact with a predetermined gas; a mass spectrometer unit at a later stage of the vacuum chamber to perform mass spectrometry of ions having passed through the cell or ions derived from the ions; a first gas introduction unit to introduce a predetermined gas into the cell; a second gas introduction unit to introduce a predetermined gas into the vacuum chamber and outside the cell; and controllers to control gas introduction such that a gas is introduced by the first gas introduction unit when analysis is performed while bringing a gas into contact with ions, whereas a gas is introduced by the second gas introduction unit when analysis is performed without bringing a gas into contact with ions.

The invention provides a preparation method of a planar gate accumulation layer channel field effect transistor embedded with a 3C / 4H-SiC heterogeneous junction. The preparation method comprises the following steps: growing an (n-) 4H-SiC drift region and an (n) 4H-SiC current expansion layer (CSL) on an (n +) 4H-SiC substrate by adopting a hot wall chemical vapor deposition (HWCVD) technology; forming a (p) 4H-SiC body region and an (n) 4H-SiC layer on the two sides of the CSL by using a mask, inductively coupled plasma (ICP) etching and ion implantation methods; growing a (p) 3C-SiC region on the upper part of the inner side of each (p) 4H-SiC body region by using a mask, ICP (Inductively Coupled Plasma) etching and HWCVD (High Weight Chemical Vapor Deposition); forming (n) 4H-SiC channels on the two sides of the middle part of the CSL by using a mask and HWCVD, and forming a (p) 3C / (n) 4H-SiC heterogeneous junction with a (p) 3C-SiC region at the bottom; respectively forming an (n +) 4H-SiC source region and a (p +) 4H-SiC source region on the outer side of each (n) 4H-SiC channel by utilizing ion implantation; forming an (n +) 3C-SiC region on the outer side of each (p +) 4H-SiC source region by adopting mask, ICP etching and HWCVD, and forming an (n +) 3C / (n) 4H-SiC heterogeneous junction with the (n) 4H-SiC layer below the (p +) 4H-SiC source region; performing high-temperature annealing to eliminate defects and activate impurities; forming an oxide layer and an (n +) poly-Si gate on the top; and respectively evaporating an alloy grid electrode, a source electrode and a drain electrode to prepare the planar gate accumulation layer channel field effect transistor embedded with the 3C / 4H-SiC heterogeneous junction. The leakage current of the transistor is small and is smaller than the on-resistance (Ron, sp), and the reverse recovery time is short.

A method for operating a plasma chamber to increase ion energy and decrease angular spread of ions during an etch operation is described. Method includes placing a substrate on an electrostatic chuck within the plasma chamber, wherein the electrostatic chuck is electrically coupled to a node. Method further includes forming a plasma in the plasma chamber, where the plasma produces a sheath with a first sheath voltage. The method further includes increasing the first sheath voltage to a second sheath voltage by applying a non-sinusoidal voltage at the electrostatic chuck and by applying a sinusoidal voltage at the electrostatic chuck, where a sum of the non-sinusoidal voltage and the sinusoidal voltage creates a voltage response on the electrostatic chuck that effectuates a change in a spread in ion energy at the wafer.

The invention discloses an individual tree segmentation method based on machine learning, and particularly relates to the field of individual tree segmentation. The method comprises the following steps: respectively acquiring forest point cloud data through a ground scanner and an unmanned aerial vehicle, registering the forest point cloud data into a complete data set, preprocessing the point cloud data, extracting geometric, reflective and spatial distribution multi-dimensional features, and fusing the geometric, reflective and spatial distribution multi-dimensional features into a comprehensive feature vector; training a model by using a machine learning method based on the labeled data, taking the feature vector as input, and outputting whether the point belongs to a tree or not; predicting a point category by using the trained model, performing individual tree instance segmentation by using a connected component clustering and graph segmentation method through CRF post-processing optimization, constructing a 3D model and calculating key parameters; and finally, performing post-processing on a preliminary segmentation result, filtering noise by using connected region analysis, filling the deficiency by using a three-dimensional hole, optimizing a boundary based on graph segmentation, and optimizing a block seam by using an ICP (Inductively Coupled Plasma) algorithm.

The invention relates to the technical field of instruments and meters, in particular to an inductively coupled plasma mass spectrometer system for intelligent data processing and report generation. Comprising a sample introduction unit, a plasma excitation and ionization unit, a mass analyzer and detection unit, a vacuum system unit and an intelligent data processing and report generation unit. Efficient ionization is achieved through a bipolar radio frequency switching and AI optimized reaction gas plasma source, the AI optimization module monitors in real time and dynamically adjusts parameters so that the ionization efficiency can be stabilized at 92% + / -2%, and meanwhile a reaction gas control system can optimize plasma conditions to suppress interference ions. And the mass analyzer and the detection unit realize high-precision ion separation by utilizing AI interference correction and a QMS-TOF double analyzer mode, and an interference elimination module can automatically eliminate polyatomic ion interference, so that the ionization efficiency, the analysis precision and the accuracy are improved, the interference is effectively inhibited, and the analysis capability of the system on a complex sample is enhanced.

The invention discloses a modified metal oxide catalyst and a plasma coupling electro-catalysis ammonia synthesis system based on the catalyst, cobalt oxide is modified by using radio frequency inductively coupled plasma (ICP) under a vacuum condition and an argon atmosphere, and the cobalt oxide catalyst rich in defects is obtained after discharging is finished. The ammonia synthesis system comprises a plasma activated air system and an electrocatalytic ammonia synthesis system; carrying out plasma discharge on air to generate NOX, cooling, and introducing the NOX into the absorption liquid; the absorption liquid is used as catholyte for electrocatalytic ammonia production in an H-shaped pool, and a cobalt oxide catalyst modified by plasma treatment is selected as a cathode. The cobalt oxide is treated by ICP, so that the problems of low conductivity, inert surface and the like of metal oxide are solved, and the performance of the catalyst is improved. The method solves the problems that plasma air discharge products are complex, and the ammonia yield is low due to the fact that N is equivalent to N cannot be efficiently activated through electro-catalysis.

The invention provides a method for measuring silver content in boron-containing water, which comprises the following steps: preparing a blank standard solution and a standard working solution by using a first-stage diluent and a second-stage diluent, and respectively pretreating the blank standard solution, the standard working solution and a to-be-measured sample solution by using a third-stage diluent; the first-stage diluent comprises a nitric acid solution, the second-stage diluent comprises a boron solution, and the third-stage diluent comprises a nitric acid solution; and measuring the silver content of the to-be-measured sample solution by adopting inductively coupled plasma emission spectrometry. According to the determination method provided by the invention, the silver content in the boron-containing water of the nuclear power plant can be accurately and rapidly detected through pretreatment of the test solution, the problem of boron interference in the boron-containing water is solved, the detection accuracy of the silver content is improved, and support is provided for chemical control of nuclear power loop water.

An object of the present invention is to provide a chemical solution that, in the case of being used in a step of bringing a contact-target member and the chemical solution into contact with each other, is less likely to cause a predetermined defect in the contact-target member. A chemical solution according to the present invention includes an organic solvent and a metal-containing particle including a metal element selected from the group consisting of Fe, Ni, and Zn, wherein an I value determined by a method X is 0.010 to 10.000,method X: the chemical solution is applied onto a substrate to prepare a subject; a surface of the subject is analyzed by being scanned with laser using laser-ablation-inductively coupled plasma-mass spectrometry, to obtain charts for the metal elements in which an abscissa axis indicates laser scanning time and an ordinate axis indicates ion detection intensity; the ion detection intensity of the charts is accumulated for the scanning time to determine accumulated ion detection intensities of the metal elements; the accumulated ion detection intensities of the metal elements are added up to determine a total accumulated ion detection intensity; and the total accumulated ion detection intensity is divided by a laser scanning area to obtain an I value in units of counts / mm2.

An apparatus for generating plasma inductively in a process chamber leverages a radial coil network. In some embodiments, the radial coil network is a planar structure comprising an inner conductor with an open center where at least one RF power source is electrically connected to the inner conductor at a power node, an outer conductor spaced away from and surrounding the inner conductor where at least one ground is electrically connected to the outer conductor at a ground node, a plurality of branch conductors extending from the inner conductor to the outer conductor where the plurality of branch conductors is distributed uniformly in the radial coil network, and a plurality of capacitors where at least one capacitor of the plurality of capacitors is electrically interposed into each branch conductor of the plurality of branch conductors.

The invention discloses a tunnel back break analysis method based on a dynamic center line and an incremental convex hull, and belongs to the technical field of tunnel engineering detection. According to the system, the problems that a traditional detection method is low in efficiency and large in error are solved by fusing dynamic slice projection, robust registration and intelligent contour generation technologies. The method specifically comprises the following steps: carrying out configurable downsampling (the density is reduced to 0.2%-0.5% at an interval of 50-1000 points) on an original point cloud, constructing a tunnel three-dimensional model (the side length of a grid is less than or equal to 0.1 m) by adopting a dynamic center line extraction algorithm, and carrying out ICP (Inductively Coupled Plasma) registration (error lt; the method comprises the following steps of: synchronously extracting a design / actual measurement section contour by using a combined slicing technology, generating an actual measurement polygon based on an incremental convex hull algorithm (a filtering threshold value is 20 points), and calculating an over-break volume (an error is less than or equal to 1.5%) by using a spatial Boolean operation. A dynamic center line extraction and incremental convex hull algorithm is innovatively introduced, automatic generation of a color gradation analysis atlas (over-excavation RGB (255, 69, 0) and under-excavation RGB (30, 144, 255)) is supported, and full-process closed-loop processing is realized.

The invention discloses a subway protection area intelligent patrol system based on an unmanned aerial vehicle. The system comprises a data acquisition module which collects multi-dimensional area data in real time through a multi-mode sensor; the feature acquisition module is used for generating a dynamic implicit field through a DNIF encoder to automatically extract space-time continuous difference features; the difference acquisition module is used for introducing an improved ICP (Inductively Coupled Plasma) registration algorithm to carry out registration comparison on the point cloud data on the basis of space-time continuous difference characteristics to obtain optimized point cloud data differences, and obtaining a comprehensive difference degree on the basis of the optimized point cloud data differences; and the abnormity patrol module obtains a foreign matter behavior mode around the track through an optimized Kalman filtering model, maps the foreign matter behavior mode and the comprehensive difference degree into a causal graph model to generate an optimal patrol decision, improves the scientificity and timeliness of the decision, and optimizes patrol resource configuration at the same time.

The invention discloses an ultratrace mercury isotope analysis method, and relates to the technical field of environmental analysis. The method comprises the following steps: purging a liquid sample to be detected by nitrogen in a stannous chloride atmosphere, and trapping and concentrating mercury into a gold trapping tube; pyrolyzing the pyrolytic gold trapping tube to release mercury vapor; pyrolytic mercury vapor and thallium isotope internal standard aerosol are mixed to serve as a sample injection sample, and the sample injection sample is introduced into a multi-receiver inductively coupled plasma mass spectrometry; acquiring a mercury instantaneous signal and a thallium isotope signal; and calculating the mercury isotope ratio by adopting least square linear regression fitting in combination with a thallium internal standard ratio correction algorithm. According to the method, the instantaneous mercury isotope signal is generated by online combination of gold trapping and multi-receiver inductively coupled plasma mass spectrometry, the instantaneous signal is strategically collected and processed, the determination concentration of isotope analysis can be greatly reduced, the sensitivity of the method is remarkably improved, and direct determination of mercury isotope composition in a water sample with the concentration of 10 ng L <-1 > is met.

A hybrid inductively coupled plasma mass spectrometer (ICP-MS) system is disclosed for simultaneous elemental and molecular analysis in positive and negative polarities. It includes an ICP torch that generates plasma with a buffer gas, producing both positively and negatively charged ions from a sample. Positioned between the sampler and skimmer, an insert with a defined geometry forms a reaction chamber. Various embodiments feature multiple apertures for pressure control, a rotatable disk for aperture regulation, a slider gate for pressure adjustment, a circular gate with adjustable radial apertures, and an inlet for introducing gases, reagents, dopants, or analytes. These components enable precise pressure modulation, optimizing performance for dual-polarity mass spectrometry. The system enhances analytical flexibility by facilitating controlled ion reactions, improving sensitivity and specificity for both elemental and molecular applications. This innovation expands ICP-MS functionality, supporting diverse scientific and industrial applications requiring high-precision mass analysis.

The invention belongs to the field of medical imaging and artificial intelligence, and discloses a preoperative three-dimensional CT registration method based on a single X-ray image. According to the method, the CT of the current pose of the patient is recovered by using an X-ray image, and then CT registration in a three-dimensional space is performed by using the recovered CT and the preoperative CT, so that the problem of dimension mismatching in a previous registration method is solved. The invention provides a single-view-angle CT reconstruction network which is used for converting a two-dimensional X-ray image into a three-dimensional CT, and then registration of the CT generated by the network and the preoperative CT is realized by using an ICP (Inductively Coupled Plasma) algorithm. The CT registration in the three-dimensional space is realized only by using the X-ray image, the CT registration precision is effectively improved, the submillimeter-level CT registration is realized, the position of the anatomical structure of a patient can be accurately determined especially in the spine orthopedic surgery, and doctors are helped to accurately and efficiently implement the surgery.

A method and apparatus for generating light includes a chamber having a high voltage region, a low voltage region, and a plasma generation region that defines a plasma confinement region. A magnetic core is positioned around the chamber and is configured to generate a plasma in the plasma confinement region. A switched power supply includes a DC power supply and a switched resonant charging circuit that together generate a plurality of voltage pulses at the output causing a plurality of current pulses to be applied to the power delivery section around the magnetic core so that at least one plasma loop is established around the magnetic core that confines plasma in the plasma confinement region, thereby forming a magnetically confined Z-pinch plasma. Light generated by the Z-pinch plasma propagates out of a port in the light source.

The invention relates to the field of test and analysis of impurity element content of primary magnesium ingots, in particular to a method for testing impurity element content of primary magnesium ingots by ICP (inductively coupled plasma) spectrometry, which comprises the following steps: firstly adding H2O2 into a magnesium ingot sample to infiltrate the sample, then adding HCl at an interval of less than 1 minute to carry out first reaction, carrying out first heating after the reaction is finished, and then carrying out second heating, cooling to 20-30 DEG C, transferring to a volumetric flask, and fixing the volume by using third-level water to obtain a sample solution; establishing a working curve by using an ICP spectrometer and a standard solution; testing the sample solution; the ratio of the mass of the magnesium ingot sample to the volume of H2O2 to the volume of HCl is 1: (3-10): (30-54), the method fills the standard vacancy of ICP spectrometry analysis of the silicon element in the primary magnesium ingot, a reliable basis is provided for chemical component analysis of the primary magnesium ingot, the test result is surface, and the method for testing the mass fraction of the impurity elements in the primary magnesium ingot provided by the invention has the advantages of high analysis precision, simple operation, high accuracy and high reliability. The analysis period is short, and related chemical varieties are few.

The invention belongs to the technical field of numerical control machining, and particularly relates to an aviation structural part die forging allowance rapid distribution method. The method is based on an ICP (Inductively Coupled Plasma) algorithm, the actual position measurement of a die forging blank corresponding to each contour point in a die forging theoretical contour point set is completed under an initial processing coordinate system, and an actual position point set is formed; and then the initial machining coordinate system attitude is continuously updated in a small step pitch iteration mode, the actual position point set is projected to a new machining coordinate system to calculate the distances of other theoretical outline point sets, calculation is stopped until the change is minimum, and optimal machining coordinate system attitude adjustment is completed.

The invention discloses a method for determining the content of trace holmium, thulium and tungsten in rare earth erbium and a compound thereof, which comprises the following steps: placing a rare earth erbium and compound sample thereof in a beaker, and performing a blank test along with a sample; adding nitric acid, heating at low temperature until the sample is completely dissolved, and cooling; transferring into a volumetric flask, adding a cesium internal standard solution, diluting with water, and uniformly mixing; the holmium, the thulium and the tungsten are measured by using an oxygen mode of an inductively coupled plasma tandem mass spectrometer, and the contents of the holmium, the thulium and the tungsten are calculated according to a working curve method. According to the method, the inductively coupled plasma tandem mass spectrometry technology is used, and mass spectrum interference of an erbium matrix on holmium, thulium and tungsten is effectively eliminated by selecting a proper reaction mode and optimizing the flow of reaction gas.

The invention discloses a resonant InGaN quantum well integrated micro-opto-electro-mechanical accelerometer device and a preparation method thereof, a silicon-based nitride wafer is used as a carrier, a silicon substrate layer, an aluminum nitride layer, a u-type gallium nitride layer, an n-type gallium nitride layer, an InGaN quantum well layer and a p-type gallium nitride layer are sequentially arranged from bottom to top, and a p-type electrode is arranged above the p-type gallium nitride layer. And an n-type electrode is arranged above the edge of the n-type gallium nitride layer. According to the invention, a resonant beam detector and a crescent LED which are different in shape are prepared on a nitride material on a silicon substrate by using a photoetching process and an ICP (Inductively Coupled Plasma) etching process, light emitted by the crescent LED is converged to a high-sensitivity resonant beam, and under an acceleration load, light current received by the resonant beam changes periodically, so that the sensitivity of the high-sensitivity resonant beam detector is improved, and the sensitivity of the high-sensitivity resonant beam detector is improved. The magnitude of the corresponding acceleration can be reversely deduced through the periodic resonant frequency, so that the detection device with the high-sensitivity long and straight resonant beam is enabled to generate oscillation, and the detection device is enabled to generate periodically changing current to sense the magnitude of the acceleration.

The invention relates to a magnetron sputtering cathode device, magnetron sputtering equipment and a coating method. The magnetron sputtering cathode device comprises: a cover plate assembly comprising a cathode cover plate and a dielectric window, the cathode cover plate covers a vacuum chamber, the cathode cover plate is provided with a mounting hole arranged in a penetrating manner, and the dielectric window is arranged on the cathode cover plate and seals the mounting hole; the coil is arranged on the dielectric window and located on the outer side of the vacuum chamber; the shielding cover is arranged in the vacuum chamber and corresponds to the dielectric window, the shielding cover is provided with a bent radio frequency channel, and the radio frequency channel is communicated with the dielectric window and the vacuum chamber on the two sides of the shielding cover; and the cathode assembly comprises a target material and a magnetic part, the target material is arranged in the vacuum chamber, and the magnetic part is arranged in the target material. Thus, radio frequency electromagnetic waves generated by the coil can enter the vacuum chamber through the radio frequency channel to improve the density of the plasma, and sputtering particles can collide with the inductively coupled plasma to improve the ionization rate of the target material, optimize crystal grains of a deposited film layer and improve the performance of a device.