213 results about "Inductively coupled plasma" patented technology

A carbon dioxide (CO2) hydrogenation catalyst and a method of its preparation. The CO2 hydrogenation catalyst includes an alkali-metal enriched bauxite residue including calcium carbonate (CaCO3), iron(III) oxide (Fe2O3), iron(III) oxyhydroxide (FeO(OH)), aluminum hydroxide (Al(OH)3), sodalite, muscovite, and Na5Al2CSi3O15. The CO2 hydrogenation catalyst further includes 1 weight percent (wt. %) to 10 wt. % potassium based on a total weight of the CO2 hydrogenation catalyst by inductively coupled plasma optical emission spectroscopy (ICP-OES). The CO2 hydrogenation catalyst is used in a method of hydrogenating carbon dioxide to produce olefins.

A method for processing a substrate is provided. The method includes disposing a substrate in a processing region of a process chamber and flowing a reaction gas into a remote plasma region of the process chamber, flowing a precursor gas into the processing region through the second plurality of channels in the showerhead, generating an inductively coupled plasma in the remote plasma region using the reaction gas to form plasma radicals, and exposing the precursor gas in the processing region to plasma radicals to form a dielectric film on the substrate with at least 95% step coverage.

This invention provides a high-selectivity dry etching method for surface convergence before p-GaN regrowth, comprising: etching the surface of the p-GaN layer or GaN layer of a GaN / AlGaN heterojunction in a Cl-based gas atmosphere to remove the native oxide layer and contaminants; introducing a mixture of BCl3 and fluorine-containing gas into a reaction chamber under inductively coupled plasma conditions, and maintaining the self-bias voltage within a first preset range for etching to selectively remove the p-GaN layer or GaN layer and achieve near-stop etching in the AlGaN layer, wherein the fluorine-containing gas is used to form an aluminum fluoride layer on the surface of the AlGaN layer to inhibit etching; and reducing the self-bias voltage from the first preset range to a second preset range and / or reducing the proportion of fluorine-containing gas in the mixed gas under plasma conditions to perform convergence treatment on the surface of the near-stop etched structure. This improves the repeatability of the process window and the adaptability of the regeneration length.

The invention discloses a multi-element quantitative analysis method for laser ablation inductively coupled plasma mass spectrometry, and aims to solve the problems that the quantitative process of the existing LA-ICP-MS technology depends on a standard sample, the automation degree is low, and the existing LA-ICP-MS technology cannot adapt to complex multi-element signals. According to the method, full-automatic and multi-element (such as 9 main quantities and 30 trace elements) quantitative analysis is realized in the LA-ICP-MS field without an internal standard and an external standard, the analysis efficiency, the accuracy and the data comparability among different platforms are remarkably improved, and a breakthrough solution is particularly provided for application of element quantitative imaging and the like.

A flow control device for aerosolised sample delivery in an inductively coupled plasma (ICP) analytical system is provided. The device includes a body that at least in part defines a sample flow separating region, the sample flow separating region having a longitudinal flow direction and having an upstream end through which the aerosolised sample enters and a downstream end through which a modified aerosolised sample exits. The body further includes an injection duct having an opening adjacent to the sample flow separating region, the injection duct configured to direct a stream of gas in an injection direction to the sample flow separating region. The injection direction is angled relative to the longitudinal flow direction such that, upon introduction of the stream of gas through the opening, a vortex flow is generated in the sample flow separating region, the vortex flow having a direction counter to the direction of flow of the aerosolised sample to provide control of droplet size in the modified aerosolised sample.

This invention relates to a GaN-based pn junction diode device with a polarized beveled termination structure and its fabrication method. The device includes a cathode, a GaN substrate, an epitaxial layer, and an anode. The epitaxial layer comprises a lightly doped n-type GaN layer, an intrinsic GaN layer, and a p-type doped GaN layer grown in a single epitaxial growth process. The anode ohmic contact metal is placed on the p-type doped GaN layer, and the cathode ohmic contact metal is placed on the back side of the GaN substrate. It also includes a polarized beveled termination structure formed at the interface containing the pn junction, using inductively coupled plasma reactive ion etching (ICP-R) and a photoresist mask. The photoresist mask is formed using thick photoresist, followed by high-temperature heating and annealing to form the reflow morphology of the photoresist. Finally, wet repair and a passivation layer are applied to suppress the beveled n-type donor surface states of the polarized beveled termination structure. This invention effectively alleviates the boundary electric field concentration problem of GaN-based pn junctions and improves the breakdown voltage of GaN-based pn junctions.

The application provides an infrared detector deep mesa etching process based on a three-layer mask and an infrared detector, and belongs to the field of infrared detector mesa etching. The process comprises the following steps: spin-coating a stress buffer layer on the surface of a superlattice epitaxial layer and curing the stress buffer layer; depositing a hard mask as an etching barrier layer; depositing an inorganic oxide; spin-coating a photoresist to form a composite patterned top layer, and then forming a mesa pattern through a photolithography process; taking the mesa pattern as a mask, transferring the mesa pattern to the hard mask through reactive ion etching; etching the stress buffer layer by using plasma until the surface of the superlattice epitaxial layer is exposed; taking the three-layer mask as a barrier, performing deep etching by using inductively coupled plasma, and the etching depth is 5.6-6 microns; and performing a post-processing step. The process of the application can realize high-quality and high-aspect-ratio mesa etching without introducing additional pollution and significant cost increase, and is suitable for the preparation of deep mesa and high-aspect-ratio devices.

The invention relates to a method for measuring and analyzing nickel, silicon and phosphorus in nickel-containing pig iron, in particular to the technical field of detection and analys.The measuring and analyzing method comprises the steps that a nickel-containing pig iron sample is drilled, sampled and separated through a hard alloy drill bit, and a test sample is obtained; sequentially carrying out acid dissolution, solid-liquid separation and constant volume on the obtained test sample to obtain a test solution; measuring the contents of nickel, silicon and phosphorus in the obtained test solution by adopting a full-spectrum direct-reading inductively coupled plasma emission spectrum; a standard curve used in the full-spectrum direct-reading inductively coupled plasma emission spectrum measurement is obtained by dissolving a gradient nickel-containing pig iron standard sample to a constant volume. According to the determination and analysis method provided by the invention, the detection process is designed, so that the nickel, silicon and phosphorus elements in the nickel-containing pig iron with the nickel content of 8-15% can be jointly determined, and a scientific data basis is provided for production management and control.

This invention discloses an isotope abundance detection method and system based on the centroid method of emission spectroscopy, belonging to the fields of analytical chemistry and spectroscopic analysis technology. This method measures the centroid position of the atomic spectral lines or molecular spectral bands of the target element, utilizing the quantitative relationship between the centroid position and isotope abundance to achieve rapid, accurate, and low-cost detection of isotope abundance. This invention is the first to systematically establish a complete theoretical framework for the use of the centroid method of emission spectroscopy for isotope abundance detection, revealing the strict linearity conditions between the centroid and abundance, as well as the sources of error. This method is applicable to various excitation sources such as microwave plasma, inductively coupled plasma, and laser-induced breakdown plasma, covering both atomic and molecular spectroscopy detection modes, significantly reducing the resolution requirements of the spectrometer and exhibiting good noise interference resistance. This invention can be widely applied in fields such as nuclear engineering, semiconductor industry, environmental science, geochemistry, and medicine.

The invention discloses a method for detecting boron and phosphorus impurities in photovoltaic polycrystalline silicon recovery hydrogen, and belongs to the technical field of detection of polycrystalline silicon recovery hydrogen, and the method comprises the following steps: taking two absorption bottles as sample absorption bottles, taking the other two absorption bottles as blank absorption bottles, and finally adding a silver nitrate solution into each absorption bottle; the two sample absorption bottles are connected in series and then installed on the sampler, then recycled hydrogen is introduced, the recycled hydrogen passes through the silver nitrate solution, the silver nitrate solution absorbs boron and phosphorus impurities in the recycled hydrogen, and the two sample absorption bottles are not connected with the sampler; weighing the two sample absorption bottles together with the internal solution, detecting by adopting an inductively coupled plasma mass spectrometer to obtain the content of boron and phosphorus impurity elements in the sample absorption liquid, and obtaining the content of boron and phosphorus impurity elements in the blank solution in the same detection mode; and calculating to obtain the content of boron and phosphorus impurity elements in the recovered hydrogen. The method can accurately detect the contents of boron and phosphorus elements in the recovered hydrogen.

The present invention (A) General formula Li 1+x TM 1-x A core material made of O2, wherein TM is a combination of Ni, Al, at least one of Mn and Co, and at least one metal optionally selected from Mg, Zr, Ti, Nb, Ta and W, x is in the range of 0 to 0.2, and at least 80 mol% of TM is nickel. (B) A coating containing at least one boron compound in the oxidized state of (B)+III, Regarding cathode active materials containing, Here, the core material (A) is a polycrystalline material composed of primary particles as secondary particles, and the lattice constant ratio c / a determined by X-ray diffraction and Rietveld refinement is 4.9420 or less. 0.0009 ≤ λ ≤ 0.0024, where λ is the molar ratio of sulfate to TM determined by inductively coupled plasma spectroscopy (ICP), and the sulfate concentration is essentially constant across the secondary particle size.

Inductively coupled plasma apparatus having a reaction chamber for generating an inductively coupled plasma, a liquid cooling induction coil with at least a portion helically wound around the reactor chamber, an annular heat sink encircling a flange of the reactor chamber, and a thermally conductive potting material disposed between the annular heat sink and the flange of the reactor chamber.

This invention provides a method, apparatus, electronic device, and storage medium for heavy metal detection in dairy products, relating to the field of food processing technology. The method includes: acquiring heavy metal detection requirement information corresponding to a dairy product sample; determining configuration parameters for an inductively coupled plasma mass spectrometer (ICP-MS) based on the heavy metal detection requirement information, and sending the configuration parameters to the ICP-MS to enable the ICP-MS to start operation based on the configuration parameters; feeding a digestion solution and a standard solution corresponding to the dairy product sample into the ICP-MS to enable the ICP-MS to detect the digestion solution and the standard solution, thereby determining the heavy metal detection results of the dairy product sample; and generating a heavy metal detection report for the dairy product sample based on the heavy metal detection results. The method and apparatus provided by this invention improve the efficiency and accuracy of heavy metal detection in dairy products.

This invention discloses a preparation process for high-carbon ferrochrome based on plasma spheroidization technology, belonging to the field of powder metallurgy. The process involves crushing and ball milling high-carbon ferrochrome blocks to obtain pre-formed powder, adding tannic acid, urea, nickel acetate tetrahydrate, and citric acid for coating, followed by spray drying. After pre-reduction carbonization in an argon-hydrogen atmosphere, the powder is then spheroidized using a radio frequency inductively coupled plasma torch. In-situ nanostructure growth is achieved in a mixed atmosphere of argon, hydrogen, and acetylene. Nickel acetate is reduced to catalytically active elemental nickel nanoparticles under the action of hydrogen and carbon monoxide. The powder is then cooled, graded, and inertly encapsulated to obtain a high-sphericity, low-oxygen-content, high-carbon ferrochrome-based core-shell structured spherical powder. The process flow of this invention is continuous and controllable, effectively improving powder flowability, bulk density, hardness, and corrosion resistance, and is applicable to additive manufacturing, thermal spraying, and powder metallurgy forming.

The invention discloses an SLAM (Simultaneous Localization and Mapping) positioning method and system based on probability intensity weighted ICP (Inductively Coupled Plasma). According to the method, modeling is carried out on an environment map through a random finite set theory, pose estimation is carried out by adopting a probability intensity weighted ICP algorithm, landmark existence probability and space uncertainty are introduced in registration to carry out adaptive weighting, and interference of clutter and leak detection is effectively inhibited. And at the same time, a Gaussian mixture PHD filter is combined to carry out closed updating on the map. According to the method, the problems of positioning drift and map distortion caused by data association errors of a traditional ICP algorithm in a complex noise environment are solved, and the precision, robustness and real-time performance of an SLAM system are remarkably improved.

Embodiments of the disclosure are directed to PEALD batch processing chambers. Some embodiments are directed to processing chambers having one or more inductively coupled plasma (ICP) coils electrically connected to at least one RF power source. Some embodiments are directed to processing chambers having a wafer cassette comprising a plurality of platforms, each platform configured to support at least one wafer for processing, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette. In some embodiments, the plurality of platforms have a first set of electrodes having a first polarity and a second set of electrodes having a second polarity, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette.

The application discloses a kind of inductively coupled plasma micro-propeller of double antenna structure, and its discharge system includes gas source, air inlet valve, antenna, discharge tube and radio frequency power supply.Gas source is directly connected with discharge tube by valve, wherein the valve can control the air intake during discharge;Then two identical helical antennas are connected in series at a certain distance and are wound on the same discharge tube, the output end of radio frequency power supply is connected to the end of antenna away from air inlet through impedance matcher, and the other end of radio frequency power supply and antenna is connected to the same ground.The application has simple structure, small space size and mass, and only needs to work stably at low power and low air intake, realizing micro-newton to millinewton level thrust.It is suitable for equipping in most of the current constellation micro-satellites without propulsion system of nanosatellite and cubic satellite.In addition, the length and spacing of the two antennas in the system are adjustable, and the size of the propeller can be adjusted according to the specific requirements of micro-satellite.

There is a need for improved inductively coupled plasma sources and plasma processing apparatuses, and methods of using the same.SOLUTION: In at least one embodiment, a method comprises introducing a process gas into a gas injection channel and generating an inductively coupled plasma in the gas injection channel. The plasma comprises at least one radical species selected from oxygen, nitrogen, hydrogen, NH, and helium. The method includes providing a plasma from a plasma source to a process chamber coupled to the plasma source by flowing the plasma through a separation grid between the plasma source and the substrate. The method includes processing a substrate. Processing the substrate includes contacting a plasma including at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps positioned on a second side of the substrate opposite the separation grid.SELECTED DRAWING: Figure 8

The invention relates to a method for determining the total amount of impurity elements in a natural high-purity quartz mineral, which comprises the following steps of: preparing a laser sheet of the quartz mineral, observing and photographing by using a polarizing microscope, designing an analysis test point on a picture, and carrying out point-by-point analysis and determination on a laser ablation and inductively coupled plasma spectrum according to the design point. Accurate determination of impurity elements of quartz minerals in a natural high-purity quartz raw material is realized, comprehensive analysis and evaluation are carried out, and grade characteristics of the quartz minerals in the high-purity quartz raw material are further determined. The method is suitable for analysis and determination of impurity elements in natural quartz minerals, has the advantages of low detection limit, high sensitivity, wide linear range and the like, can be applied to effective and rapid evaluation, quality monitoring and the like of high-purity quartz raw materials, and provides quartz mineral raw materials with stable grades for the high-purity quartz sand industry.

The invention discloses a two-dimensional texture positioning method and device based on RANSAC (Random Sample Consensus) and ICP (Inductively Coupled Plasma), relates to the technical field of two-dimensional texture positioning, and solves the problems of insufficient robustness and low positioning accuracy of two-dimensional texture positioning in the prior art. Through Hamming distance and distance ratio testing, the stability of feature matching is improved, the RANSAC algorithm is used for detecting and eliminating mismatching points, the positioning robustness is improved, the ICP algorithm is used for refined positioning based on an inner point set, the positioning precision is improved, and the reliability of a positioning result is ensured through re-projection error and confidence evaluation. According to the method, abnormal values are effectively detected and eliminated through the RANSAC algorithm, the positioning robustness is improved, refined positioning is carried out in combination with the ICP algorithm, and the positioning precision is remarkably improved.

A rapid, field-deployable method and associated kit for the qualitative detection of zinc fortification in wheat flour are disclosed. ፐከ6 method includes treating a wheat flour sample suspected of containing added zinc with a chromogenic reagent comprising dithizone dissolved in an ethanol solvent to induce a visually discernible color change from a blue profile to a pink-purple or red profile. The assay can be performed 85 8 surface spot test or as ል testtube liquid assay, the latter utilizing an aqueous buffer solution maintained at a pH of 5.5 to 6.0 to mobilize zinc ions. The resulting color change is evaluated against an intentionally fortified wheat flour standard. When validated against an Inductively Coupled Plasma Mass Spectrometry (ICP-MS) reference standard, the assay exhibits a sensitivity of 96.5%, a specificity of 90.9%, an overall misclassification rate of 5.88%, and 8 Cohen's kappa coefficient (k) of 0.88.

A method for measuring the chelation degree of a crystalline glycine chelate, comprising: first obtaining the crystal structure of a glycine chelate salt by means of a scanning electron microscope, and determining whether the glycine chelate salt is a crystalline product; then performing characterization by means of Fourier-transform infrared spectroscopy, and determining, on the basis of changes and shifts in peak values, whether a chelation reaction has occurred in the glycine chelate salt; then determining glycine content in the glycine chelate salt by means of high performance liquid chromatography, and using an inductively coupled plasma spectrometer to determine metal element content; and finally determining free water and crystal water of the glycine chelate salt by means of thermogravimetric analysis and summing the glycine content, metal ion content, crystal water, and free water measured in each glycine chelate salt to demonstrate the high-purity characteristic of the product.

The invention discloses an orchard operation robot global positioning method and system based on a large language model-multi-metric ICP (Inductively Coupled Plasma). The method comprises the following steps: firstly, constructing a global semantic priori map containing structured text description and macroscopic geometric feature vectors; then real-time point cloud data are collected, and text description and geometric feature vectors of a current scene are generated through semantic segmentation; a coarse-to-fine two-stage registration strategy is adopted, in the coarse registration stage, features are screened through information entropy, an optimal candidate area is screened in combination with adaptive fusion scores of semantic matching degree and geometric feature similarity, and a coarse registration pose is obtained through an NDT algorithm; in the fine registration stage, a multi-metric ICP optimization objective function fusing four residual terms of distance, feature, strength and semantics is constructed, the coarse registration pose is used as an initial value, the weight of each metric term is dynamically adjusted based on a large language model, and optimal pose transformation is solved; and obtaining a global positioning result of the robot based on the optimal pose transformation. According to the invention, the positioning precision and robustness are improved.

The present disclosure provides a substrate processing chamber configured to produce an inductively coupled plasma. In one example, the substrate processing chamber has a chamber body and a substrate support assembly disposed within the chamber body. The substrate processing chamber has a lid assembly enclosing a processing region within the chamber body. The lid assembly has an inductive coil configured to generate a plasma within the processing region of the chamber body. A radio frequency shield encloses the inductive coil and at least one magnet is coupled to a magnet power source and disposed outside of the radio frequency shield.

The invention discloses a low-loss Si-based GaN growth method based on ICP-nitrogen ion implantation. The method comprises the steps that a high-resistance Si substrate is acquired, cleaned and dried; carrying out N ion implantation on the surface of the obtained substrate by adopting inductively coupled plasma so as to form an n-type region formed by pre-laying N on the surface of the substrate; and preparing an aluminum nitride nucleating layer, an AlGaN buffer layer, a GaN buffer layer, a GaN channel layer and an AlGaN barrier layer on the surface in sequence. Aiming at the problems that the radio frequency loss of a material is increased and the radio frequency performance of a device is degraded due to Al / Ga diffusion in the heteroepitaxial growth process of a Si-based GaN material, the Al / Ga diffusion behavior is inhibited based on an inductively coupled plasma-N ion implantation mode, the diffusion of Al and Ga elements into a Si substrate in the high-temperature epitaxial growth process of an AlGaN / GaN material system can be effectively inhibited, and the performance of the device is improved. Therefore, a P-type parasitic conducting channel is generated on the surface of the Si substrate, the process is simple, and the repeatability is high.

An apparatus for inductively generating plasma in a process chamber utilizes a radial coil network. In some embodiments, the radial coil network is a planar structure including an inner conductor having an open center, wherein at least one RF power source is electrically connected to the inner conductor at a power node; an outer conductor spaced apart from and surrounding the inner conductor, wherein at least one ground is electrically connected to the outer conductor at a ground node; a plurality of branch conductors extending from the inner conductor to the outer conductor, wherein the plurality of branch conductors are evenly distributed in the radial coil network; and a plurality of capacitors, wherein at least one capacitor of the plurality of capacitors is electrically inserted into each branch conductor of the plurality of branch conductors.

An inductively coupled plasma mass spectrometer tray belongs to the technical field of trays for inductively coupled plasma mass spectrometers, comprises a fixed substrate, a clamping device, a fixed upright post, a supporting inclined plate, a fixed base, a supporting cushion block and a rotating rolling ball, and is characterized in that the clamping device is inserted in the middle of the lower part of the right side surface of the fixed substrate in a sliding manner; fixing stand columns are connected to the four corners of the lower surface of the fixing base plate correspondingly, a supporting inclined plate is connected to the middle of the position between every two front-back adjacent fixing stand columns, a fixing base is connected to the middle of the position between the lower surfaces of the four fixing stand columns, and supporting cushion blocks are connected to the four corners of the lower surface of the fixing base correspondingly. A rotating rolling ball is inserted in the middle of the lower surface of each supporting cushion block in a rolling mode, a test tube can be clamped on the tray when the tray is moved, the test tube and the tray collide with each other to be damaged when the placing frame is moved, the test tube can be buffered when making contact with a dam, and the test tube is prevented from being broken after making contact with the bottom plate when falling down.

Embodiments disclosed herein generally relate to methods of forming thin film transistors (TFTs). The method includes forming one or more metal oxide layers and / or polysilicon layers. A gate interface (GI) layer is deposited over one or more metal oxide and / or polysilicon layers using a high density plasma chemical vapor deposition (HDP-CVD) process with inductively coupled plasma (ICP). Deposition of a GI layer using an HDP-CVD layer results in an unexpectedly increased mobility of a metal oxide layer deposited thereon.

The technical scheme of the invention discloses a denudation pool for laser denudation and inductively coupled plasma mass spectrometry, and relates to the field of LA-ICP-MS aerosol collection devices. The device comprises a base, a denudation pool body, a sample bearing assembly, an in-situ gas circuit assembly, a denudation laser assembly and a pressure control module, a driving module is arranged in the base, an ultrathin CaFglass window layer is embedded in the top of the denudation pool body, a polytetrafluoroethylene coating is sprayed on the inner wall of the denudation pool body, the sample bearing assembly comprises a three-dimensional fine adjustment sample table and a magnetic suction type sample frame, the in-situ gas circuit assembly adjusts the distance between a gas inlet pipe and a gas outlet pipe (1-4 mm) through double mechanical arms, and a focusing objective lens is coaxial with a conical collection opening of the gas outlet pipe. The pressure control module maintains micro-positive pressure in the cell. According to the denudation pool, the problems of aerosol retention and insufficient sensitivity of a traditional denudation pool can be solved, the aerosol washing time is shortened to about 0.6 s, and the multi-element signal intensity is improved by 2-7 times.

The invention relates to the technical field of semiconductor manufacturing, in particular to an online cleaning method for an inductively coupled plasma cavity. The method comprises the steps that the pollution level of a pollution layer of a quartz barrel in a cavity is detected, and when the pollution level meets a preset starting condition, online cleaning operation is started; injecting a low-temperature medium into the cavity, and cooling the quartz barrel of the cavity; adjusting the internal pressure of the cavity, introducing a process gas into the cavity, applying a radio frequency power pulse to excite the plasma, and enabling the pollution layer on the surface of the quartz barrel to fall off through the synergistic effect of the heat effect and the charge effect of the plasma; and carrying out purging and exhaust treatment on the cavity so as to remove the pollution layer falling off from the cavity. Under the condition that normal operation of a production line does not need to be interrupted, rapid removal of a pollution layer and discharge of particulate matter can be achieved, and the maintenance cost and time of equipment are remarkably reduced.