1932 results about "Inductively coupled plasma" patented technology

A rotational antenna and a semiconductor manufacturing device provided with the same are disclosed. The rotational antenna includes a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis, wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis.

The present invention relates to an apparatus and method for forming a plasma in the exhaust line of a primary process reactor. The plasma is generated in an inductive source (5) to examine the chemical concentrations of the waste or exhaust gas in vacuum lines that are below atmospheric pressure. The optical radiation emitted by the plasma is analyzed by an optical spectrometer (9) and the resulting information is used to diagnose, monitor, or control operating states in the main vacuum vessel.

Plasma distribution is controlled in a plasma reactor by controlling the phase differences between different RF coil antennas, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.

A plasma reactor has an overhead multiple coil inductive plasma source with RF feeds arranged in equilateral symmetry.

A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

A plasma processing apparatus performs a process on a substrate by using plasma. The plasma processing apparatus includes a processing chamber; a mounting table which is located in the processing chamber and on which a substrate is mounted; a gas shower head formed of a conductive material provided to face the mounting table and having at the bottom surface thereof a plurality of gas injection openings for supplying a processing gas into the processing chamber; an induction coil to which a high frequency current is supplied to generate an inductively coupled plasma in a region surrounding a space below the gas shower head; a negative voltage supplying unit for applying a negative DC voltage to the gas shower head to allow an electrical field, which is induced by the induction coil, to be drawn to a central portion of the processing region; and a unit for evacuating the processing chamber.

A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

An opening for forming a gate electrode is provided by a first photoresist pattern formed on an insulating film. Reactive ion etching by inductively coupled plasma is applied to the insulating film through the first photoresist pattern as a mask to thereby expose the surface of a GaN semiconductor layer, evaporating thereon a gate metal such as NiAu, thereby forming the gate electrode by self-aligned process. This prevents an oxidized film from being formed on the surface of the semiconductor layer. After the gate electrode is formed, a second photoresist pattern is formed to form a field plate on the gate electrode and the insulating film through the second photoresist pattern as a mask. Thereby, Ti having a high adhesiveness with an insulating film made of SiN or the like can be used as a field plate metal.

A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Disclosed herein is an apparatus for surface-treating a wafer using high-frequency inductively-coupled plasma, including a process chamber including a plasma generation unit into which a reaction gas is introduced and which generates plasma, and a wafer treatment unit in which any one or more selected from among plasma treatment, thin film formation and etching is performed; and a pressure control unit including a vacuum plate, and a pumping port, a two-stage valve, a turbo pump and an APC valve which are organically connected with the vacuum plate, to control a pressure in the process chamber and a pumping rate.

Implementations disclosed herein relate to methods for controlling substrate outgassing. In one implementation, the method includes removing oxides from an exposed surface of a substrate in an inductively coupled plasma chamber, forming an epitaxial layer on the exposed surface of the substrate in an epitaxial deposition chamber, and performing an outgassing control of the substrate by subjecting the substrate to a first plasma formed from a first etch precursor in the inductively coupled plasma chamber at a first chamber pressure, wherein the first etch precursor comprises a hydrogen-containing precursor, a chlorine-containing precursor, and an inert gas, and subjecting the substrate to a second plasma formed from a second etch precursor in the inductively coupled plasma chamber at a second chamber pressure that is higher than the first chamber pressure, wherein the second etch precursor comprises a hydrogen-containing precursor and an inert gas.

The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each being located longitudinally around an axis perpendicular to the plane of the workpiece to form a magnetic bucket that extends the length of the side wall of the processing chamber and across a workpiece insertion opening and a vacuum pump opening. The magnetic bucket of the present invention may be formed so that the pedestal need not be raised to be within the bucket, or may be formed by permanent magnets oriented with one pole of each magnet facing the interior of the processing chamber, or with opposite poles of adjacent magnets facing each other, thereby forming cusps around the axis perpendicular to the plane of the workpiece. Current carrying conductors may generate all or part of the magnetic bucket. The present invention may provide an inner wall member secured within the processing chamber. All or a portion of the inner wall may be grounded to provide a well defined anode for bias power that is applied to the workpiece pedestal, and may be heated so that deposits do not cause its impedance to drift.

The invention belongs to the crossing field of computer vision and intelligent robots, relates to an indoor three-dimensional scene rebuilding method based on a double-layer rectification method and solves the problems that an existing indoor scene rebuilding method is expensive in required equipment, high in computation complexity and poor in real-time performance. The indoor three-dimensional scene rebuilding method based on the double-layer rectification method comprises Kinect calibration, SURF feature point extraction and matching, mapping from a feature point pair to a three-dimensional space point pair, three dimensional space point double-layer rectification based on random sample consensus (RANSAC) and inductively coupled plasma (ICP) methods and scene updating. According to the indoor three-dimensional scene rebuilding method based on the double-layer rectification method, the Kinect is adopted to obtain environmental data, and the double-layer rectification method is provided based on the RANSAC and the ICP. Indoor three-dimensional scene rebuilding which is economical and rapid is achieved, and the real-time performance of rebuilding algorithm and the rebuilding precision are effectively improved. The indoor three-dimensional scene rebuilding method based on the double-layer rectification method is applicable to the service robot field and other computer vision fields which are relative to the three-dimensional scene rebuilding.

Disclosed herein is a high-frequency induction plasma reactor apparatus for producing nano-powder, which is configured to continuously manufacture nano-powder in large quantities using solid-phase powder as a starting raw material and to manufacture high-purity nano-powder by completely vaporizing the material powder. The high-frequency induction plasma reactor apparatus comprises an upper body and a cover. The upper body is provided with a reaction pipe receiving a reactor extending vertically inside thereof, a high-frequency coil surrounding the outer periphery of the reaction pipe and a ceramic inner wall provided inside the reaction pipe. The ceramic inner wall is formed with a plurality of gas passing bores and defines a gas movement passage with the inner side wall of the reaction pipe therebetween for allowing the inflow of argon gas from the outside into the reactor. The cover is mounted to the upper end of the reactor and adapted to seal the reactor. The cover is provided with a powder injection tube communicating with the reactor.

A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer while inductively coupling RF plasma source power into the process region. A particular plasma ion density level is established by maintaining the total amount of plasma source power inductively and capacitively coupled into the process region at a level that provides the desired plasma ion density. The plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers. The VHF capacitively coupled power may be applied from the ceiling or from the wafer support.

The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.

A semiconductor manufacturing apparatus and process for forming a nitrided dielectric film includes generating a plasma source (44) over a wafer structure (46), where the plasma source (44) includes neutral species (such as nitrogen atoms) and charged species (such as nitrogen ions) that are formed in an inductively coupled plasma reactor. Before the charged species in the plasma (44) can penetrate the wafer structure (46), an electrically connected mesh structure (45, 47) between the plasma source (44) and wafer structure (46) blocks the charged species. In addition or in the alternative, a magnetic field (69) aligned in parallel with the surface of the wafer structure (66) is established in close proximity to the wafer structure (66) in order to trap the charged species. By removing charged species, an improved, narrower nitrogen concentration profile is obtained.

Fabrication methods using Ion Beam Etching (IBE) for MRAM cell memory elements are described. In embodiments of the invention the top electrode and MTJ main body are etched with one mask using reactive etching such as RIE or magnetized inductively coupled plasma (MICP) for improved selectivity, then the bottom electrode is etched using IBE as specified in various alternative embodiments which include selection of incident angles, wafer rotational rate profiles and optional passivation layer deposited prior to the IBE. The IBE according to the invention etches the bottom electrode without the need for an additional mask by using the layer stack created by the first etching phase as the mask. This makes the bottom electrode self-aligned to MTJ. The IBE also achieves MTJ sidewall cleaning without the need for an additional step.

Improvements have been made for collecting, focusing, and directing of ions and/or charged particles generated at atmospheric or near atmospheric pressure sources, such as but not limited to, electrospray; atmospheric pressure discharge ionization, chemical ionization, photoionization, and matrix assisted laser desorption ionization; and inductively coupled plasma ionization. A multiple-aperture laminated structure is place at the interface of two pressure regions. Electric fields geometries and strengths across the laminated structure and diameters of the apertures; all of which act to optimize the transfer of the ions from the higher pressure region into the lower pressure region while reducing the gas-load on the lower pressure region. Embodiments of this invention are methods and devices for improving sensitivity of mass spectrometry when coupled to atmospheric, near atmospheric, or higher pressure ionization sources by reducing the gas-load on the vacuum system.

A thin laminated high transmission electro-optical lens populated with a plurality of apertures in communication with its laminates used to improve the collection, focusing, and selection of ions generated from atmospheric pressure sources, such as electrospray, atmospheric pressure chemical ionization, inductively coupled plasma, discharge, photoionization and atmospheric pressure matrix assisted laser desorption ionization. The laminated lens is made of alternating layers of electrically insulating and metal laminates. The geometry of the lens may be planar or shaped into various curve shapes, any of which act to optimize both the direct current (DC) and alternate current (AC) electric field geometries and strengths across the lens for transferring virtually all the ions from the ion source into an ion-focusing region adjacent and upstream of a high pressure or atmospheric pressure interface to a mass spectrometer, ion mobility analyzer, or combination thereof. Embodiments of this invention are methods and devices for improving sensitivity of mass spectrometry when coupled to high pressure or atmospheric pressure ionization sources.

A RF power generator for exciting inductively coupled plasma for spectrometry includes an induction coil for exciting the plasma as part of its load circuit. The load circuit also comprises a capacitor connected in parallel with the induction coil. The RF power generator is a free running oscillator having a switching circuit of two MOSFETs alternately switchable on and off via a feedback control circuit from the load circuit. RF power from the switching circuit is coupled to the load circuit via an inductor. The inductor and load circuit is resonant at a first frequency, which is lower than the operating frequency of the power generator.

In a gas containing a fluorine atom in the molecule, etching of a SiN film is performed isotropically; therefore, the width of a sidewall gets smaller and it is difficult to widen the width of an LDD region. A silicon nitride film is formed over a gate electrode, a hydrogen bromide is mainly used as an etching gas, the silicon nitride film only over the gate electrode and the surface of a substrate are removed by an etching method such as ICP (Inductively Coupled Plasma), and the silicon nitride film is simultaneously left only on the side surface part of the gate electrode.