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140 results about "Induction plasma technology" patented technology

The 1960s were the incipient period of thermal plasma technology, spurred by the needs of aerospace programs. Among the various methods of thermal plasma generation, induction plasma (or inductively coupled plasma) takes up an important role.

Preparing method and application of high purity and density spherical titanium zirconium alloy powder

The invention relates to a preparing method and application of high purity and density spherical titanium zirconium alloy powder, and belongs to the technical field of alloy powder material preparation. The preparing method comprises the following steps that titanium sponge and zirconium sponge are used as raw materials, and titanium zirconium alloy ingots are prepared by using a vacuum induction melting technology; uniform vacuum annealing treatment is conducted on the titanium zirconium alloy ingots, and the ingots of uniform elements are obtained; the titanium zirconium alloy ingots are crushed into particles, hydrotreating is conducted, and hydrogen absorption titanium zirconium alloy powder is obtained; the hydrogen absorption titanium zirconium alloy powder is ball-milled under atmosphere protecting, and the hydrogen absorption titanium zirconium alloy powder of small particle sizes and irregular forms is obtained; the hydrogen absorption titanium zirconium alloy powder of irregular forms are sent to an inductive plasma torch, and the hydrogen absorption titanium zirconium alloy powder quickly absorbs heat, is dissolved and dehydrogenized; and in the dehydrogenizing process, the hydrogen absorption titanium zirconium alloy powder is split and shattered and then fused and nodulized under the high temperature, and finally, the high purity and density spherical titanium zirconium alloy powder is obtained by cooling. The titanium zirconium alloy powder prepared through the method has the advantages of being high in purity, small in particle size, good in uniformity, high in degree of sphericity and good in flowability.
Owner:云航时代(重庆)科技有限公司

Earlier stage treatment process of raw material powder for preparing induction plasma capacitor level nano tantalum powder

The invention relates to a pre-treatment technology of raw material powder used for preparing induction plasma capacitor grade nanometer tantalum powder. The technology comprises the steps as follows: a. tantalum powder with the granularity of 2-10micrometer which is prepared by sodium thermal reduction is used raw material; b. spheroidizing treatment is carried out on the raw material tantalum powder by an induction plasma powder synthesizing system, the technological parameters of the spheroidizing treatment are as follows: medium gas flux is 30 standard liter/min; sheath gas flux is 80-120 standard liter/min of argon and 0-10 standard liter/min of hydrogen; reaction chamber pressure is 50-120Kpa; plasma power is 30-60KW; powder feed rate is 2-15kg/h; cooling gas flux is 300-800 standard liter/min; the relative position of a powder feeder is arranged at the middle part of a plasma area; powder feeding gas flux is 8-20 standard liter/min; c. filtering treatment is that vibration filter is carried out by a 160-220 mesh screen mesh on a screen grader; d. air current grading treatment is that grading treatment is carried out on a cyclone separator, the technological parameters of the g rading treatment are as follows: power feed rate is 2-5kg/h, and the grading gas flux is 300-600 standard liter/min. The invention can carry out the continuous preparation of capacitor grade nanometer and submicron tantalum powder and ensures that the raw material is spherical by spheroidizing, filtering and grading treatment, and the powder with the granularity controlled within 2-5 micrometer takes more than 90 percent of the whole powder; and the invention improves the granularity distribution state, overcomes the aggregation and improves the collection efficiency of the tantalum powder, the utilization rate of energy and material and the electrical property.
Owner:NO 52 INST OF CHINA NORTH IND GRP CORP

Method for preparing nanometer silicon powder

The invention discloses a method for preparing nanometer silicon powder. The nanometer silicon powder is made of coarse silicon powder. Inert gas is used as carrier gas. The method includes carrying the coarse silicon powder by the carrier gas, allowing the coarse silicon powder to penetrate plasmas generated by a high-frequency plasma generator and feeding the coarse silicon powder into a reaction chamber; quickly gasifying the coarse silicon powder in high-temperature plasma regions in the reaction chamber to generate silicon atom steam cloud; forming tiny silicon particles by the generated silicon atom steam cloud under the effects of cooling gas flow when the silicon atom steam cloud flows through cooling regions; driving the silicon particles by gas flow to flow into a cyclone classification chamber; detaining the classified coarse silicon particles in the cyclone classification chamber; carrying the fine silicon particles into a gas-solid separation chamber by the aid of the gas flow; ultimately depositing the fine silicon particles on a filter of the gas-solid separation chamber; collecting the silicon particles on the filter to obtain the nanometer silicon powder. The method has the advantages that the induction plasmas are used as heat sources, accordingly, electrode pollution can be prevented in preparation procedures, the nanometer silicon powder prepared by the aid of the method is high in purity, and the particles are in spherical or approximately spherical morphology, have large specific surface areas and are high in surface activity and good in flowability and dispersibility.
Owner:CHINA NONFERROUS METAL (GUILIN) GEOLOGY & MINING CO LTD

Fabrication method of gallium nitride laser cavity surface

The invention discloses a fabrication method of a gallium nitride laser cavity surface, which comprises the steps of epitaxially growing a gallium nitride laser structure on a substrate, obtaining an epitaxial wafer, coating an ohmic contact layer of the epitaxial wafer with photoresist, applying an photoetching plate for standard photoetching, evaporating metal on the epitaxial wafer, fabricating a metal mask on an epitaxial layer, etching to an n-type optical confinement layer of a laser, corroding and etching to form a side wall of the cavity surface, and removing the metal mask on the surface of the epitaxial layer, wherein the gallium nitride laser structure comprises an n-type ohmic contact layer, an n-type confinement layer, an n-type waveguide layer, a quantum well, an electronic barrier layer, a p-type waveguide layer, a p-type confinement layer and a p-type ohmic contact layer sequentially from one side of the substrate. According to the method, the cavity surface with the level and smooth surface is obtained by an induction plasma etching and alkaline solution corrosion method, so that the damage to the cavity surface caused by an ion bombardment effect after a dry corrosion technology is eliminated, the damage of plasma to the cavity surface is repaired, and the emissivity of the cavity surface is improved.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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