The invention discloses a fabrication method of a gallium nitride laser cavity surface, which comprises the steps of epitaxially growing a gallium nitride laser structure on a substrate, obtaining an epitaxial wafer, coating an ohmic contact layer of the epitaxial wafer with photoresist, applying an photoetching plate for standard photoetching, evaporating metal on the epitaxial wafer, fabricating a metal mask on an epitaxial layer, etching to an n-type optical confinement layer of a laser, corroding and etching to form a side wall of the cavity surface, and removing the metal mask on the surface of the epitaxial layer, wherein the gallium nitride laser structure comprises an n-type ohmic contact layer, an n-type confinement layer, an n-type waveguide layer, a quantum well, an electronic barrier layer, a p-type waveguide layer, a p-type confinement layer and a p-type ohmic contact layer sequentially from one side of the substrate. According to the method, the cavity surface with the level and smooth surface is obtained by an induction plasma etching and alkaline solution corrosion method, so that the damage to the cavity surface caused by an ion bombardment effect after a dry corrosion technology is eliminated, the damage of plasma to the cavity surface is repaired, and the emissivity of the cavity surface is improved.