87results about How to "Increase ion density" patented technology

A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpiece support, a VHF power generator being coupled to the capacitively coupled source power applicator, a plasma bias power applicator or electrode in the workpiece support and an RF bias power generator coupled to the plasma bias power applicator. A controller adjusts the relative amounts of power simultaneously coupled to plasma in the chamber and conduit by the toroidal plasma source and by the capacitively coupled plasma source power applicator.

Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.

A method for producing a nanostructured, in particular a ceramic-like functional coating on a substrate is described. To that end, using at least one plasma source, a pulsed plasma is produced with which a matrix phase and at least one nano-scale interstitial phase embedded in it are deposited on the substrate via a material input. Preferably a plurality of pulsed plasma sources that are time-correlated or synchronized with each other are used. Also proposed is a nanostructured functional coating, in particular one producible by this method, which is free of chlorine and/or sulfur, and which contains at least one metal and/or at least one element selected from the group oxygen, hydrogen, nitrogen, carbon, helium, argon or neon.

The present invention provides a carbon film forming method capable of forming a dense carbon film with high hardness. The carbon film forming method includes: introducing a raw material gas G including carbon into a deposition chamber 101 whose internal pressure is reduced; ionizing the raw material gas G using a discharge between a filament-shaped cathode electrode 104 heated by electrical power and an anode electrode 105 provided around the cathode electrode; and accelerating and radiating the ionized gas to the surface of a substrate D. A magnetic field is applied by a permanent magnet 109 to increase the ion density of the ionized gas accelerated and radiated to the surface of the substrate D. In this way, it is possible to form a carbon film with high hardness and high density on the surface of the substrate D.

The present invention provides a liquid crystal display component which can represent the necessary ion density and realize long-term stability of the ion density, a liquid crystal aligning film which represents necessary ion density and realizes the long-term stability of ion density in the liquid display component, and a liquid crystal aligning agent which can form the liquid crystal aligning film. According to the invention, the liquid crystal aligning film is formed by the liquid crystal aligning agent which comprises the polyamic acid or the derivative thereof, and furthermore the liquidcrystal aligning film is used in the liquid crystal display component. The polyamic acid is the reaction product of specific diamine and tetracarboxylic dianhydride, wherein the specific diamine comprises piperazine.

A vacuum plasma processor includes an electrode array with plural mutually-insulated electrodes forming a bottom or top electrode of the plasma processor. When the electrode array is part of the bottom electrode, the electrodes of the array are parts of a thermoelectric, Peltier effect arrangement responsive to localized temperature sensors and are parts of an electrostatic chuck. The thermoelectric arrangement controls localized temperature of workpieces and the chucking voltages indicate workpiece position relative to a workpiece holder including the electrodes. The electrodes of the arrays are coupled to circuitry for determining and/or controlling at least one localized plasma electric parameter at different locations of a workpiece and/or the plasma. The circuitry simultaneously supplies RF power having differing frequencies and/or power levels to different electrodes of the arrays and includes separate matching networks connected to the different electrodes of the array.

A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer while inductively coupling RF plasma source power into the process region. A particular plasma ion density level is established by maintaining the total amount of plasma source power inductively and capacitively coupled into the chamber at a level that provides the desired plasma ion density. Chemical species distribution or content in the process region plasma is controlled by adjusting the ratio between the amounts of the capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method further includes applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.

A plasma etching system for etching, in particular anisotropic etching, of a substrate by using a plasma. The plasma etching system has a first plasma-generating device which is inductively coupled in particular and has a first arrangement for generating a first high-frequency electromagnetic alternating field, a first plasma-generating area for generating a first plasma and a first gas feed, as well as a first plasma-generating device downstream from a second plasma-generating device which is inductively coupled in particular and has a second arrangement for generating a second high-frequency electromagnetic alternating field, a second plasma-generating area for generating a second plasma and a second gas feed. The substrate to be etched is arranged in the first plasma-generating device. The second plasma is suppliable to the first plasma-generating device via the first gas feed at least partially as a first reactive gas.

An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

The present invention discloses an auxiliary method and device for wire cut electrical discharge machining. The method comprises applying a magnetic field which is perpendicular to a machining direction and a wire electrode direction at the same time to a workpiece in a wire cut electrical discharge machining process. The device comprises a direct current excitation source and electromagnets. A discharge ion passage in wire cut electrical discharge machining is restricted and compressed through the applied magnetic field, and a lorentz force acting on the discharge ion passage and a lorentz force acting on a wire electrode are generated, so ion density of the discharge ion passage is raised, collision of charged ions in the discharge ion passage is intensified, discharge contact points of a working surface are increased, and a function of raising a material removal rate is achieved. Charged ion disturbances at surfaces of the electrodes are reduced through the magnetic field, stability of the discharge iron passage and discharge stability in wire cut electrical discharge machining are improved, and thus the surface quality of the manufactured workpieces is raised.

The present invention relates to a liquid crystal display device that uses a particular liquid crystal composition and a color filter that uses a particular pigment.

The present invention provides a liquid crystal display device that prevents a decrease in voltage holding ratio (VHR) and an increase in ion density (ID) of a liquid crystal layer and resolves the problems of display defects, such as missing dots, alignment variation, and ghosting.

Since the liquid crystal display device of the present invention prevents a decrease in voltage holding ratio (VHR) and an increase in ion density (ID) of a liquid crystal layer and resolves the problems of display defects, such as ghosting, it is particularly useful for active matrix drive VA-mode and PSVA-mode liquid crystal display devices and can be applied to liquid crystal display devices such as liquid crystal televisions, monitors, cellular phones, and smart phones.

The present invention provides a liquid crystal display device that prevents a decrease in the voltage holding ratio (VHR) and an increase in the ion density (ID) in the liquid crystal layer, and resolves the problems of display defects, such as white streaks, variations in alignment, and image sticking. Since a liquid crystal display device according to the present invention has a feature of preventing a decrease in the voltage holding ratio (VHR) and an increase in the ion density (ID) in the liquid crystal layer, and suppressing the occurrence of display defects such as image sticking, the liquid crystal display device is particularly useful for active matrix driving liquid crystal display devices with an IPS mode or an FFS mode and can be applied to liquid crystal display devices such as liquid crystal televisions, monitors, cellular phones, and smart phones.

The invention discloses an ultraviolet lamp ionizing device taking photoelectrons as an electron source. The ultraviolet lamp ionizing device comprises an ionizing cavity, an ultraviolet lamp, a repulsion electrode, a focusing ring, an orifice plate, a capillary sample and a lens system. In the invention, the ultraviolet lamp generates photoelectrons on the metal electrode, and then the photoelectrons are accelerated to be collided with molecules of the sample by utilizing an electric field to realize electron ionizing. The ultraviolet lamp ionizing device has the characteristics of wide range of samples to be tested, oxidation resistance, long service life, wide working voltage range and the like so as to have broad application prospect on the aspects of process monitoring and pollutant real-time on-line analysis.

There is provided a liquid crystal display apparatus that may limit a reduction in the voltage holding ratio (VHR) of a liquid crystal layer and limit an increase in the ion density (ID) in the liquid crystal layer and address issues of faulty display such as white missing pixels, alignment inconsistencies, and burn-in. Having a feature of limiting a reduction in the VHR of a liquid crystal layer and limiting an increase in an ion density (ID) in the liquid crystal layer and thereby reducing occurrence of faulty display such as burn-in, the liquid crystal display apparatus according to the present invention may be particularly suitably used as a VA-mode or PSVA-mode liquid crystal display apparatus for active-matrix driving and may be used as a liquid crystal display apparatus included in a liquid crystal TV, a monitor, a mobile phone, a smart phone, or the like.

The invention discloses a process and device for coating a steel strip through ECR microwave plasma chemical vapor deposition and relates to the field of chemical plating. After being unfolded in the air and chemical pre-treatment or plasma pre-treatment, the steel strip enters an ECR microwave plasma chemical vapor deposition unit through a vacuum tunnel and a vacuum sealing device and then a precursor, a carrier gas and a reaction gas are introduced into the ECR microwave plasma chemical vapor deposition unit to generate plasma to coat the strip steel with a film; and after coating, the steel strip passes through a closed device and enters the air to be coiled completely and the whole coating process is finished. The process and the device can be used in the field of steel vacuum coating or on laboratory equipment. Given the industrialization of vacuum coating, the process and the method can be further promoted and have wide prospects.

An improved system relating to sterilizing the surfaces of objects using a dual-frequency plasma-based process.