275 results about "Positive bias" patented technology

Methods of operating non-volatile memory devices are described. The memory devices comprise memory cells having an n-type semiconductor substrate and p-type source and drain regions disposed below a surface of the substrate and separated by a channel region. A tunneling dielectric layer is disposed above the channel region. A charge storage layer is disposed above the tunneling dielectric layer. An upper insulating layer is disposed above the charge storage layer, and a gate is disposed above the upper insulating multi-layer structure. A positive bias is applied to a word lines of the memory device in a selected memory cell and a negative bias is applied to a bit line in the selected cell.

A method of operating a memory device is disclosed, wherein the memory device includes an n-type substrate and a plurality of memory cells formed thereon, each memory cell corresponding to a word line, a first bit line, and second bit line, and including a first bit portion and a second bit portion each for storing one bit of information. The method includes resetting a selected memory cell by applying a first negative bias to the word line of the selected memory cell and applying a ground bias to the first and second bit lines, and programming the first bit portion of the selected memory cell by applying a first positive bias to the word line of the selected memory cell, applying a second negative bias to the first bit line of the selected memory cell, and applying a ground bias to the second bit line of the selected memory cell.

The present invention provides an inexpensive radio frequency switching circuit having desirable radio frequency characteristics over a wide band and desirable endurance against the inflow of a high voltage signal such as an electrostatic surge. Either a negative bias voltage or a positive bias voltage being greater than or equal to 0V and less than or equal to a Schottky forward voltage is used for the control terminals V11 and V12 for controlling FETs 11 to 18 and FETs 21 to 28 so as to turn ON/OFF the path extending from the first input/output terminal P11 to the second input/output terminal P12 and the path extending from the first input/output terminal P11 to the third input/output terminal P13. Thus, it is possible to eliminate the need for DC cut capacitors.

Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.

The present patent relates to flash memory devices with improved erase function, and method of controlling an erase operation of the same. According to the present patent, the flash memory device includes memory cell blocks, each having a plurality of memory cells sharing local word lines and bit lines, an X-decoder which decodes a row address signal and outputs the decoded signal, a block selection unit, which selects some of the memory cell blocks in response to the decoded signal, and connects local word lines of the selected memory cell blocks to corresponding global word lines, respectively, and a high voltage generator, which generates word line bias voltages in response to one of a read command, a program command and an erase command, and supplies the generated word line bias voltages to the global word lines in response to the decoded signal, respectively, wherein the word line bias voltages, which are generated by the high voltage generator in response to the erase command, have a positive value, respectively. Accordingly, a positive bias voltage is applied to a global word line in an erase operation. It is thus possible to prevent a shallow erase phenomenon of non-selected memory cell blocks due to the leakage current of pass gates.

A nonvolatile semiconductor memory device comprises a memory cell including a variable resistance element changing its electric resistance by voltage application and having current-voltage characteristics in which a positive bias current flowing when a positive voltage is applied from one electrode as a reference electrode to the other electrode through an incorporated rectifier junction is larger than a negative bias current, a memory cell selection circuit for selecting the memory cell from the memory cell array, a voltage supply circuit for supplying a voltage to the memory cell so that a predetermined positive voltage corresponding to the reading operation is applied to the other electrode of the variable resistance element, in the reading operation, and a readout circuit for detecting the amount of the positive bias current and reading the information stored in the selected memory cell, in order to suppress the reading disturbance of the memory cell.

An injector for an X-ray tube is presented. The injector includes an emitter to emit an electron beam, at least one focusing electrode disposed around the emitter, wherein the at least one focusing electrode focuses the electron beam and at least one extraction electrode maintained at a positive bias voltage with respect to the emitter, wherein the at least one extraction electrode controls an intensity of the electron beam.

The invention discloses a realization method for a novel enhancement type AlGaN/GaN HEMT device, relating to the microelectronic technical field. The realization method has low cost, simple technique, good repeatability, high reliability and small damage on materials. The enhancement type HEMT device with high threshold voltage and nano-sized effective channel length can be obtained. The invention adopts the method of etching a table top after growth of an AlN nucleating layer and a GaN epitaxial layer and before growth of a secondary GaN epitaxial layer and an AlGaN layer to make heterojunction materials on the side face of the table top grow along the nonpolarized direction, thereby the air density of two-dimensional electrons in the heterojunction materials on the side face of the table top is greatly reduced. A grid electrode of the device is produced on the side face of the table top; under the condition of no additional voltage on the grid electrode, a conductive channel can not be switched on or weakly switched on; under the condition of certain additional positive bias on the grid electrode, the conductive channel is switched on. The invention can be used in a high-temperature high-frequency high-power situation, a high-power switch and a digital circuit.

An organic semiconductor infrared distance sensing apparatus and an organic infrared emitting apparatus thereof are disclosed. The organic semiconductor infrared distance sensing apparatus comprises an organic infrared emitting apparatus and an organic infrared receiving apparatus. The organic infrared emitting apparatus has a positive electrode layer and a negative electrode layer to form an electric field, and organic light emitting molecules are sandwiched between the two layers and correspond to the positive electrode layer and the negative electrode layer. Under a positive bias, a plurality of electrons and holes are respectively injected from electrodes and recombine with each other to emit photons. An infrared organic conversion layer absorbs and transfers the energy to infrared emitting molecules to emit infrared light. The organic infrared receiving apparatus receives the infrared light reflected by an obstacle to generate photocurrent which varies with distance, thereby sensing the distance between the obstacle and the apparatus.

The invention relates to a measuring device and a method of the thrust vector of a detection space plasma thruster. The measuring device of the thrust vector mainly comprises an electrostatic probe, an electrostatic probe regulating mechanism, a locating piece and a data acquisition and processing system. The method comprises the following steps: first fixing the electrostatic probe on a movable platform, simultaneously regulating the position of the electrostatic probe, installing the locating piece on the position which the probe can contact when the axis of the probe coincides with that of the plasma thruster, collecting the electrons jetted on the local position by the thruster in real time by the electrostatic probe on which positive bias voltage is applied when the movable platform moves at a constant speed along the direction vertical to the axis of the thruster, thus collecting the voltage signals at both ends of sample resistance in real time by the data acquisition and processing system when current flows through a probe circuit, and educing deflection of the actual thrust vector from the design objective by comparing the differences between the time corresponding to the vertex of the voltage signals at both ends of the sample resistance and the sudden change time of the voltage signals at both ends of the locating piece according to the moving speed of a translation stage and the distance from the electrostatic probe to the exit of the thruster.

A new, effective and cost-efficient method of introducing Fluorine into Hf-based dielectric gate stacks of planar or multi-gate devices (MuGFET), resulting in a significant improvement in both Negative and Positive Bias Temperature Instabilities (NBTI and PBTI) is provided. The new method uses an SF₆ based metal gate etch chemistry for the introduction of Fluorine, which after a thermal budget within the standard process flow, results in excellent F passivation of the interfaces. A key advantage of the method is that it uses the metal gate etch for F introduction, requiring no extra implantations or treatments. In addition to the significant BTI improvement with the novel method, a better V_th control and increased drive current on MuGFET devices is achieved.

A method for programming a storage element and a storage element programmed using gate induced junction leakage current are provided. The element may include at least a floating gate on a substrate, an active region in the substrate, and a second gate adjacent to the floating gate. The method may include the steps of: creating an inversion region in the substrate below the floating gate by biasing the first gate; and creating a critical electric field adjacent to the second gate. Creating a critical electric field may comprise applying a first positive bias to the active region; and applying a bias less than the first positive bias to the second gate. The element further includes a first bias greater than zero volts applied to the active region and a second bias greater than the first bias applied to the floating gate and a third bias less than or equal to zero applied to the second gate. The first and third bias are selected to create leakage current in the substrate between the floating gate and the select gate.

The invention relates to a general thick film type floating plate modulator, which comprises a control component FPGA, a high-speed logic optocoupler, a driving circuit, an impulse isolation transformer, a thick film high-pressure switching circuit and a suspension power supply, wherein the FPGA uses VHDL language to modulate ultra-wide impulse into opening impulse train and truncation impulse; an isolation strip wave duct amplifier of the high-speed logic optocoupler is used for striking a light to protect the FPGA; the driving circuit adopts a high-speed driver to amplify the opening impulse train and the truncation impulse; the impulse isolation transformer comprises a primary electrode and a dual-secondary electrode; the thick film high-pressure switching circuit is composed of an opening tube and a truncation tube auxiliary circuit; the opening impulse train and the truncation impulse are transmitted to the thick film high-pressure switching circuit through the impulse isolation transformer; and the on/off of the opening tube and the truncation tube are switched to realize compatibility of the ultra-wide impulse and a narrow impulse. The invention adopts software language to realize opening/parameters adjustment of the truncation impulse and uses reference level of a low-pressure high-efficiency inverter to adjust positive bias so as to realize generality and interchangeability.

The invention relates to a touch display screen drive and fingerprint image acquisition method. A display unit is driven through a bigrid photoelectric thin film transistor and fingerprint images are acquired. The display unit driving process specifically includes the following procedures that the zero voltage or the positive bias voltage is applied to an optical grid of the bigrid photoelectric thin film transistor, the positive voltage is applied to a dark grid, at the moment, display signals are sent to the display unit through the drain and the source of the bigrid photoelectric thin film transistor, and the display unit is driven through the display signals. The display unit fingerprint image acquisition process includes the following procedures that the negative bias voltage is applied to the optical grid, made of a transparent conductive material, of the bigrid photoelectric thin film transistor, the positive bias voltage is applied to the dark grid, and fingerprint images acquired by the bigrid photoelectric thin film transistor can be output through the source. Due to the fact that the method does not depend on a separation device, the method has the advantages that production cost is low, power consumption is low, and the signal to noise ratio and the resolution ratio of the acquired fingerprint images are high.

The invention discloses a device and a method for forming a surface coating with adoption of grid control and plasma-initiated gas-phase polymerization, and belongs to the technical field of plasma. The device and the method are used for preparing the polymer coating on the surface of a substrate. The method is characterized in that a vacuum chamber is divided into a discharging cavity and a processing chamber by a metal grid mesh; the metal grid mesh is insulated from the vacuum chamber; carrier gas and monomer steam are fed into the discharging cavity and the processing chamber through different pipes respectively; a to-be-processed substrate is put into the processing chamber; continuous discharging plasma is generated in the discharging cavity, pulse positive bias is applied to the metal grid mesh, and the plasma is released to enter the processing cavity to initiate monomer polymerization. The method has advantages that the power supply structure is stable, the price is low, debugging is easy, the plasma is stable, the acting time of the plasma can be shortened to the microsecond level, and the like.

The invention belongs to the technical field of information storage, and particularly relates to a memristor based on a pn heterostructure and a manufacturing method of the memristor. The memristor comprises an upper electrode and a lower electrode, and the pn heterostructure composed of p-type oxide (such as CuAlO2 and NiO) and n-type oxide (such as ZnO and TiO2) is inserted between the upper electrode and the lower electrode. Positive bias voltages are continuously applied to the lower electrode, and oxygen ions in a depletion layer can be gradually migrated to one side of a p-type region from an n-type region. The vacancy concentration of positive ions on one side of the p-type region and the vacancy concentration of oxygen on one side of the n-type region are increased at the same time, the width of the depletion layer of a pn joint is gradually reduced, and therefore device resistance is gradually lowered, and the resistance memory behavior is achieved. The characteristic that the physical property of the pn joint is easy to modulate is utilized, and flexibility of regulating and controlling the resistance memory performance is increased. Selectivity on materials is poor, the performance of the resistance memory behavior is stable, the half-quantitative study on a resistance memory device is facilitated, and the basis is laid for device deign and further development.