A base bias adjustment method being applied to a base bias adjustment apparatus is provided. The base bias adjustment apparatus includes a
positive bias adjustment unit, a
negative bias adjustment unit, and an anti-interference unit. The method includes, during a
semiconductor process, obtaining a current parameter value related to an impedance of the
positive bias adjustment unit; determining whether the current parameter value is equal to a preset parameter value; and in response to the current parameter value being unequal to the preset parameter value, controlling the
positive bias adjustment unit to adjust a bias
voltage of a base until a current bias
voltage is equal to the preset parameter value.