23 results about "Reactive magnetron" patented technology

This invention discloses a CrN-W / DLC composite coating for WE43 magnesium alloy and its preparation method, belonging to the field of surface engineering and materials processing technology. The preparation method includes: pretreating the WE43 magnesium alloy substrate, placing it in a thin film deposition system, evacuating the system, introducing an Ar / N2 mixed gas, and using a Cr target for reactive magnetron sputtering deposition to form a CrN transition layer. During the deposition process, a W target is simultaneously introduced and co-deposited with the Cr target using reactive magnetron sputtering to obtain the CrN-W transition layer. Using a PECVD process, a carbon source precursor gas is introduced, and under the action of radio frequency plasma, it dissociates to form highly reactive species. These species are adsorbed, recombined, and cross-linked on the surface of the CrN-W transition layer to form a DLC functional layer, resulting in the CrN-W / DLC composite coating. The composite coating of this invention exhibits excellent bonding strength, wear resistance, and low friction performance, significantly improving the service performance of WE43 magnesium alloy.

The application provides a C-axis preferred orientation YAlN film and a preparation method and application thereof. The preparation method comprises the following steps: (1) placing a substrate in a vacuumized cavity, and heating the substrate to an ion implantation temperature; (2) introducing a first gas into the cavity until the gas pressure in the cavity reaches a first working pressure, and performing ion implantation treatment on the surface of the substrate; and (3) introducing a second working gas into the cavity until the gas pressure in the cavity reaches a second working pressure, and depositing a YAlN film on the surface of the substrate after the ion implantation treatment by means of reactive magnetron sputtering. The application combines interface regulation induced by ion implantation with the thin film deposition process of reactive magnetron sputtering, and the two processes work together to form stable C-axis preferred orientation YAlN film deposition. Through the optimization process of multiple steps, the cost of film preparation is significantly reduced, and the C-axis orientation degree of the film is effectively ensured.

The invention relates to a spectrum selective absorbing coating driven by anion and cation co-entropy engineering. The coating is composed of a polished stainless steel heat absorber substrate, a (HfZrTiTaMo) B absorbing layer and a Si3N4 antireflection layer. And the absorption layer is obtained by sputtering high-entropy boride targets with equal molar ratios under different parameters through radio frequency reaction magnetron sputtering. The preparation process is simple, the cost is low, the absorption rate of the prepared coating is larger than or equal to 0.91, the emissivity is smaller than or equal to 0.13 under the condition of the atmospheric quality factor AM1.5, and the coating has the good spectrum selection characteristic and has the important application value in the fields of solar photo-thermal power generation, photo-thermal sterilization, seawater desalination, water evaporation and deicing.

The invention relates to the technical field of semiconductor optical coating, in particular to an evaporation and magnetic control mixed coating method and equipment. Plating a first base coat on the substrate by adopting a reactive magnetron sputtering mode, and plating a second base coat on the first base coat by adopting an electron beam evaporation mode; plating a functional layer on the second base layer by adopting an electron beam evaporation mode; and plating a first protective layer on the functional layer by adopting an electron beam evaporation mode, and plating a second protective layer on the first protective layer by adopting a reaction magnetron sputtering mode. According to the invention, two coating modes of electron beam evaporation coating and reaction magnetron sputtering coating are combined, the first base coat on the end face of the substrate and the second protective layer on the outermost layer are formed by adopting the reaction magnetron sputtering coating mode, the reaction magnetron sputtering coating is compact in film formation and can be used as the waterproof layer on the outermost layer, the particle energy is relatively high during film formation, and the film formation efficiency is high. The substrate is firmly combined and is not easy to fall off; and the functional layer is coated by adopting an electron beam evaporation mode, so that the coating efficiency is improved.

This invention provides a metal mask for silicon-based liquid crystal light valve chips, relating to the field of semiconductor optoelectronic device manufacturing technology. It includes a metal substrate and a pixel aperture array, alignment mark area, stress buffer, and reinforced border disposed on the metal substrate, adaptable to mass production evaporation and photolithography processes for LCoS light valve chips. The metal substrate consists of four layers stacked sequentially from bottom to top: a substrate layer, a molybdenum transition layer, a Mo-Ta-N functional pattern layer, and an Al2O3-SiO2 composite passivation layer. The molybdenum transition layer is deposited on the substrate surface using magnetron sputtering, with a surface roughness Ra < 0.15 nm. The Mo-Ta-N functional pattern layer is deposited on the surface of the molybdenum transition layer using reactive magnetron sputtering. The near-vertical, low-roughness aperture sidewalls of this invention result in shadow-free evaporation, uniform electrodes, and clear edges, improving the light utilization and contrast of the LCoS chip. It also increases the utilization rate of the evaporation material and reduces material loss during mass production.

The invention provides a preparation method of a bearing part hot stamping die. Belongs to the technical field of bearing part stamping die preparation, and particularly relates to an innovative composite surface hardening treatment method for M50 steel with good adaptability to a bearing part material as a die base body. The composite surface hardening treatment method comprises the following two key steps: firstly, carrying out pressure stress nitriding treatment on an M50 steel substrate to form a supporting layer which is high in hardness and bearing capacity and can enhance the film-substrate binding force; then, on the nitriding layer, a TiN nanocrystalline / a-SiN amorphous alternate nanometer multilayer composite coating is prepared through a reactive magnetron sputtering vacuum physical vapor deposition technology, and the composite coating is high in surface hardness and good in overall toughness and has a self-lubricating effect; the wear resistance, thermal stability, coating adhesion and impact toughness of the bearing part hot stamping die are remarkably improved, and the service life of the bearing part hot stamping die is prolonged.

Method for the production of a Mo—N-based coating structure, including: providing a substrate to be coated and applying a hard material layer on the substrate, wherein the hard material layer includes at least one layer of Mo—N having a hexagonal crystal structure and at least one layer of Mo—N having a cubic crystal structure or a mixed hexagonal / cubic crystal structure, wherein the hard material layer is applied by a low temperature closed field unbalanced reactive magnetron sputtering coating process.

The invention relates to a substrate coating method comprising a step of supplying a substrate, in a chamber, having an electrical resistivity less than or equal to 1 Ω·cm, a step of supplying a coating target made of an austenitic alloy into the chamber, a step of evacuating the chamber and degassing the chamber under vacuum, a step of ion etching the substrate, a step of injecting a gas comprising at least argon and nitrogen into the chamber to form a chamber atmosphere, and then a step of reactive magnetron sputtering of the coating target into the chamber atmosphere, forming a coating comprising at least nickel and chromium, and doped with nitrogen. The invention also relates to the part obtained by the method. Figure for the abstract: Fig. 12

A method of fabricating a superconducting wire includes forming a buffer layer on the substrate, the buffer layer including an Al2O3 layer, the Al2O3 layer being formed by reactive magnetron sputtering in which first oxygen gas as reactant gas and a sputtering target made of aluminium metal are used, the Al2O3 layer being formed while being supplied the first oxygen gas at a first concentration, the first concentration being a concentration of the first oxygen gas at which an emission intensity of Al in plasma near a surface of the sputtering target is not less than 25% and not more than 80% of a first reference value, the first reference value being the emission intensity of Al at which the concentration of the first oxygen gas is zero; and forming a superconducting layer above the buffer layer.

The invention belongs to the technical field of semiconductor material preparation, and particularly relates to a method for preparing a SiCN thin film based on double-target reaction magnetron sputtering and application of the SiCN thin film. According to the invention, through co-sputtering of a Si target (radio frequency) and a C target (direct current) and in combination with N2 reaction gas, precise regulation and control of components and performance of the thin film are realized. The low-temperature, accurate, uniform and adjustable preparation of the SiCN film is realized through double-target reaction magnetron sputtering, and the method has environmental protection property and mass production potential, has remarkable technical advantages in the fields of semiconductors, photoelectrons, MEMS (Micro Electro Mechanical Systems) and the like, and has wide application prospects.

This invention belongs to the field of functional thin films and sensing technology, specifically relating to a vanadium oxide humidity-sensitive color-changing thin film, its preparation method, and its application. The vanadium oxide humidity-sensitive color-changing thin film is an amorphous vanadium oxide (VxOy) thin film, prepared by reactive magnetron sputtering. The ratio of V to O elements in the amorphous vanadium oxide (VxOy) thin film is 1:1.8~2.4. The surface color of the humidity-sensitive color-changing thin film changes reversibly with humidity within 0.1 s. The thickness of the humidity-sensitive color-changing thin film is 250 nm~500 nm. The humidity-sensitive color-changing thin film of this invention has a response speed of <0.03 s, high visibility, and a simple preparation process.

Crystalline taos with ultrahigh memory window x Resistive random access memory and its preparation method, belong to semiconductor thin film and its resistive random access memory technical field. Mainly include: 1) handle (100) oriented single crystal Si substrate; 2) prepare (222) oriented ITO bottom electrode on the substrate by magnetron sputtering method; 3) grow the crystalline TaO with the main crystal direction (100) and the maximum grain size of 30 nm on the ITO bottom electrode by radio frequency reactive magnetron sputtering method x Thin film as resistance layer; 4) deposit Ta electrode on the resistance layer by magnetron sputtering method. The crystalline TaO with the main crystal direction (100) and the maximum grain size of 30 nm is prepared x The thin film has good thin film crystal structure and grain size, fast growth speed and controllable thin film composition, and the crystalline TaO with the thin film as the resistance layer x The resistive random access memory shows ultrahigh memory window, very low operating voltage and strong durability, and can be crystalline TaO x The application provides certain technical guidance for commercialization and industrial application of the resistive random access memory.

The present invention relates to the technical field of magnetron sputtering process, and specifically to a method for improving the uniformity of rare earth nickelate thin film deposited by reactive magnetron sputtering, comprising the following steps: adjusting the sputter angle of a Ni target toward a substrate to perform magnetron sputtering to deposit a thin film, and obtaining the content data of the Ni element in the deposited thin film; analyzing the content data of the Ni element to screen out the sputter angle for realizing zero-gradient deposition of the Ni element on the substrate surface; similarly, screening out the sputter angle for realizing zero-gradient deposition of the RE element on the substrate surface; preparing a nickelate thin film according to the screened zero-gradient sputter angle of Ni target material and the RE target material so as to improve the deposition uniformity of the rare earth nickelate thin film. The present invention aims to solve the problem that the introduction of reactive gas in the state of art magnetron sputtering process compromises the uniformity of the product thin film.

The invention relates to the technical field of surface treatment engineering, and particularly provides a preparation method of an MCrAlY surface high-temperature-resistant infrared low-emissivity coating. The preparation method provided by the invention comprises the following steps: S1, depositing an Al layer on the surface of a substrate with an MCrAlY bonding layer by adopting a physical vapor deposition method, and then carrying out thermal oxidation treatment to form an alpha-Al2O3 layer; s2, depositing a compact Al2O3 layer on the surface of the alpha-Al2O3 layer by adopting an atomic layer deposition method; s3, depositing a platinum oxide transition layer on the surface of the compact Al2O3 layer by adopting a reaction magnetron sputtering method, and then depositing a Pt layer on the surface of the platinum oxide transition layer by adopting a magnetron sputtering method; and S4, carrying out heat treatment on the matrix treated in the step S3 to complete the preparation of the high-temperature-resistant infrared low-emissivity coating. The MCrAlY surface high-temperature-resistant infrared low-emissivity coating prepared by the preparation method disclosed by the invention has excellent element blocking performance and interface bonding strength.

The invention provides a composite film structure for improving the emissivity of a space glass material. The composite film structure is a SiNx / TaOy / SiOz three-layer composite structure. The surface of the space glass material is directly coated with the first SiNx film, the thickness of the first SiNx film is 850-1000 nm, and the ratio of the film component x is 1-1.5; the surface of the SiNx film is coated with the second TaOy film, the thickness of the second TaOy film is 150-200 nm, and the ratio of y is 2-3; and the third layer of SiOz film is coated on the surface of the TaOy film, the thickness of the third layer of SiOz film is 200-300 nm, and the ratio of z is 1.5-2.5. A reaction magnetron sputtering coating technology is adopted for preparation. Compared with uncoated space glass, the space glass provided by the invention has the advantages that the infrared emissivity (within the range of 2.5-25 microns) can be improved from 0.82-0.83 to 0.88-0.89, meanwhile, the radiation resistance of the space glass is kept unchanged, and the efficient heat dissipation requirement of a novel spacecraft is met.

The application relates to the technical field of fuel cells and discloses a preparation method of a solid oxide fuel cell. The method comprises the following steps: an anode support body with hierarchical microstructure and vertical pores is prepared by adopting a freeze flow casting forming technology; an anode functional layer with a nano composite structure is prepared on the surface of the anode support body by using reactive magnetron sputtering; a micrometer-scale electrolyte and a barrier layer are prepared on the surface of the anode functional layer by using reactive magnetron sputtering; and a cathode layer is prepared on the surface of the barrier layer by using silk screen printing and low-temperature laminated co-firing. According to the method, the anode support body prepared by freeze flow casting forming has hierarchical microstructure and vertical pores, the gas diffusion resistance is reduced, and the cell concentration polarization is reduced; the reactive magnetron sputtering technology is used to refine the anode functional layer grains, reduce the activation polarization of the cell, make the electrolyte thinner, reduce the ohmic resistance, and thus the electrochemical performance of the solid oxide fuel cell is comprehensively improved.

This invention belongs to the field of high-temperature protective coating technology, and relates to protective coatings for the surface of SOFC metal interconnects, their preparation, and application. The composite spinel coating consists of an inner NiCr2O4 layer and an outer NiFe2O4 layer. The preparation method involves mechanically polishing, cleaning, and pre-oxidizing the metal interconnect substrate to form an oxide layer on the substrate surface; subsequently, a Ni-Cr-O layer is deposited on the substrate surface using reactive magnetron sputtering, followed by the deposition of a Ni-Fe alloy layer by magnetron sputtering to form a Ni-Cr-O / Ni-Fe composite coating; finally, heat treatment is performed to transform it into a NiCr2O4 / NiFe2O4 composite spinel coating. The prepared coating has a dense structure and a strong bond with the substrate, effectively inhibiting the outward diffusion of Cr and the inward diffusion of O, exhibiting good oxidation resistance and electrical conductivity, and can be used for the protection of the surface of metal interconnects in solid oxide fuel cells.

A method of LiCoO2 film formation involves depositing a LiCoO2 layer on a substrate. This deposition is conducted by reactive magnetron sputtering of a metal cobalt (Co) target in lithium (Li) vapor onto a substrate in a vacuum chamber. A lithium tank is heated to the lithium melting point and a gas-carrier flow is fed through the heated lithium reservoir which results in the controlled feeding of lithium vapor to a magnetron system via a gas distributor. The gas distributor is connected to a working gas input and a lithium tank input. The regulated supply of lithium vapor is carried out by changing the gas-carrier flow and the lithium vapor is supplied from a heated tank.

The invention belongs to the technical field of short-wavelength optical devices, and particularly relates to a method and device for preparing a multilayer film through reactive magnetron sputtering. The method comprises the following steps: (1) depositing an X layer on a substrate in the atmosphere of working gas; (2) depositing a Y layer on the substrate on which the X layer is deposited in the atmosphere of working gas; (3) depositing a Z layer on the substrate on which the X layer and the Y layer are deposited in the range of the working gas and the reaction gas; and repeating the steps (1) to (3) for a plurality of cycles to prepare the multilayer film. The X layer is B4C, Si or Al; the Y layer is La, Mo or Ti; the Z layer is LaN, MoN or TiN; the reaction gas is nitrogen.

The invention provides a C-axis preferred orientation YAlN film and a preparation method and application thereof. The preparation method comprises the following steps: (1) placing a substrate in a vacuumized cavity, and heating the substrate to an ion implantation temperature; (2) introducing a first gas into the cavity until the air pressure in the cavity reaches a first working pressure, and performing ion implantation treatment on the surface of the substrate; and (3) second working gas is introduced into the cavity until the air pressure in the cavity reaches second working pressure, and the YAlN thin film is deposited on the surface of the substrate subjected to ion implantation through reactive magnetron sputtering. According to the method, interface regulation and control induced by ion implantation and the thin film deposition process of reaction magnetron sputtering are organically combined, and the interface regulation and control induced by ion implantation and the thin film deposition process of reaction magnetron sputtering have a synergistic effect to form stable C-axis preferred orientation YAlN thin film deposition. And through a multi-step integrated optimization process, the preparation cost of the thin film is remarkably reduced, and meanwhile, the C-axis orientation degree of the thin film is effectively guaranteed.

The invention relates to a method for coating a substrate comprising a step of providing a substrate, in a chamber, having an electrical resistivity of less than or equal to 1 Ω.cm, a step of providing a coating target made of an austenitic alloy, in the chamber, a step of evacuating the chamber and a degassing of the vacuum chamber, a step of ion etching of the substrate, a step of injecting a gas comprising at least argon and nitrogen into the chamber to form an atmosphere of the chamber, then a step of reactive magnetron sputtering of the coating target in the atmosphere of the chamber, forming a coating comprising at least nickel and chromium, and doped with nitrogen. The invention also relates to the part obtained by the method.

This invention provides a ferroelectric memristor based on aluminum scandium nitride, its fabrication method, and its applications. The memristor structure provided by this invention can be represented as Pd / Al. 0.77 Sc 0.23 N / TiN / Si. The fabrication method of this memristor includes: growing a TiN bottom electrode on a Si substrate, and growing Al on the TiN bottom electrode by nitrogen reactive magnetron sputtering. 0.77 Sc 0.23 N functional layer; in Al 0.77 Sc 0.23 A palladium electrode layer is grown on the N-functional layer. This invention is the first to use aluminum scandium nitride as the intermediate functional layer of a non-volatile memory. It has strong self-rectification characteristics and can better solve problems such as crosstalk when applied to cross-arrays. It can develop and realize new biological synaptic functions in simulated synaptic neuron systems, and its performance is good. It is a non-volatile memory with good storage performance, low turn-on voltage, and broad application prospects that simulates biological synaptic behavior.

The present application belongs to the technical field of temperature measurement, especially high-temperature temperature measurement, and specifically provides a defect construction method of C-axis preferred orientation AlN film for high-temperature temperature measurement, to improve temperature interpretation accuracy. The present application uses a medium-frequency reactive magnetron sputtering method to realize the preparation of C-axis preferred orientation AlN film, and in the sputtering process, uniform and controllable lattice defects are constructed in the C-axis preferred orientation AlN film through the method of active gas doping. The lattice defect construction method provided by the present application is simple in process, good in stability and repeatability, does not need neutron irradiation, and is low in cost. The C-axis preferred orientation AlN film with uniform and controllable lattice defects as a temperature sensitive material can realize high-temperature temperature measurement and improve temperature interpretation accuracy.