Method for depositing nano-grade TiO2 film on textile material

A textile material and nanotechnology, which is applied in the field of textile material preparation, can solve the problems of low utilization rate of target materials and waste of target materials

Inactive Publication Date: 2013-01-30
KUNSHAN TIENIU SHIRT FACTORY
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Once the sputtering groove of the magnetron sputtering target penetrates the target, the entire target will be scrapped, so the utilization rate of the target is not high, generally lower than 40%.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] In order to understand the present invention better, below in conjunction with a specific embodiment, the present invention is described in detail: a kind of deposition nano TiO on the textile material The method for thin film, comprises the steps:

[0010] Using high-purity metal Ti target (purity 99.999%, diameter 50mm) as target material, pretreated textile material as substrate, textile material-based nano-TiO2 film was prepared at room temperature by DC reactive magnetron sputtering equipment. All samples adopt the structure of the substrate on the top and the target on the bottom, that is, the nano-TiO2 film is prepared by sputtering from the bottom up to avoid impurity particles from falling on the surface of the substrate; at the same time, in order to control the temperature of the substrate during film deposition, To avoid substrate deformation due to high temperature, a water cooling device is used to cool the substrate; in order to ensure the purity of the na...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
purityaaaaaaaaaa
Login to view more

Abstract

The invention provides a method for depositing a nano-grade TiO2 film on a textile material. The method comprises the steps that: high-purity metal Ti target is adopted as a target material; a pretreated textile material is adopted as a substrate; and the textile-material-based nano-grade TiO2 film is prepared under room temperature by using a DC reactive magnetron sputtering device. All samples adopt a structure that the substrate is on the upper side and the target is on the lower side, such that the nano-grade TiO2 film is prepared by sputtering from bottom to top, and impurity particles are prevented from falling onto the surface of the substrate. Also, the substrate is cooled with a water cooling device, such that substrate temperature during film deposition is controlled, and substrate deformation caused by high temperature is avoided. For ensuring the purity of the nano-grade TiO2 film, a reaction chamber is first pumped to base vacuum; high-purity argon is delivered as a sputtering gas; and high-purity oxygen is adopted as a reaction gas. With the method provided by the invention, a relatively uniform and compact TiO2 film can be deposited on the non-woven fabric fiber surface. The average particle size of the film is relatively small, and the surface roughness of the film is relatively low.

Description

technical field [0001] The invention relates to a preparation method of a textile material, in particular to a method for depositing a nanometer TiO2 film on the textile material. Background technique [0002] The study of thin films depends on the preparation technology of thin films. High-quality thin films are conducive to the research of thin film physics and the development of thin film device applications. With the application of laser technology, microwave technology and ion beam technology, people have developed a variety of preparation technologies and methods for nano-TiO2 functional films, among which the most widely used are sol-gel method (Sol. gel), chemical vapor deposition method (CVD) and physical vapor deposition (PvD) represented by magnetron sputtering. But above-mentioned several preparation methods all have its defect, and the shortcoming of sol-gel method is that the porosity of making film, compactness, crystal form and the bonding force with matrix ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/54
Inventor 蒋建业
Owner KUNSHAN TIENIU SHIRT FACTORY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products