Preparation method of epitaxial lanthanum strontium cobalt oxide film based on radio-frequency reactive sputtering

Abstract

The invention relates to a preparation method of an epitaxial lanthanum strontium cobalt oxide film based on radio-frequency reactive sputtering. A radio-frequency reactive magnetron sputtering technology is adopted, and factors such as sputtering power, sputtering air pressure, the flow ratio of argon to oxygen and the temperature of a substrate are taken into comprehensive consideration in the sputtering process. According to the method, the importance of post-annealing is specially emphasized, sufficient oxygen is needed in the preparation process of La(1-x)SrxCoO3 film to avoid influence on the related physical characteristics of the film caused by forming of an oxygen vacancy, the defects such as the oxygen vacancy can be overcome by the post-annealing, and the surface of the film can be smoother. The preparation method of the epitaxial La(1-x)SrxCoO3 film has the advantages of compatibility with conventional industrial production, convenience in doping, simplicity in regulation of the concentration of a doped Sr element, simplicity in selection of a target material, higher utilization rate of the target material and the like, and is widely applicable to the preparation of related spintronics devices.

Description

technical field [0001] The patent of the present invention relates to a kind of equipment and operation method for preparing epitaxial lanthanum strontium cobalt oxygen film by reactive sputtering, more specifically, it is a radio frequency reactive sputtering epitaxial lanthanum strontium cobalt oxide compatible with existing industrial production and simple target material selection Preparation method of oxygen thin film Background technique [0002] As early as 1993 and 1994, Helmolt and Jin et al. successively doped perovskite manganese oxide La 2 / 3 Ba 1 / 3 MnO 3 and La 2 / 3 Ca 1 / 3 MnO 3 Colossal magnetoresistance (CMR) was found in (S.Jin, et al, Science, 1994, 264, 431). In 2004 a research group in La 0.84 Sr 0.16 MnO 3 The giant planar Hall effect was discovered in (Y.Bason, et al, Appl.Phys.Lett., 2004, 84, 2593), which is another major breakthrough in the field of anisotropic magnetic transport research, and it is speculated that A similar giant planar Hall ...

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Problems solved by technology

Thanks to La 1-x Sr x CoO 3 The conditions for thin film preparation are very harsh, and the requirements for preparation temperature, oxygen partial pressure, annealing and post-processing are relatively high, and the preparation of epitaxial La 1-x Sr x CoO 3 There are few reports on thin films, and epitaxial La 1-x Sr x CoO 3 Molecular beam epitaxy and pulsed laser deposition are o

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