34 results about "Colossal magnetoresistance" patented technology

A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa₂Cu₃O_7-X (YBCO), indium oxide (In₂O₃), or ruthenium oxide (RuO₂), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr_1-XCa_XMnO₃ (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.

A basic form of a variable capacitive apparatus and its actuating method are disclosed. The apparatus is a simple two-terminal structure and may be set by short duration, low voltage electrical pulses. Materials with perovskite structure or perovskite-related structures, especially colossal magnetoresistive materials, are the active constituents of the apparatus. The apparatus overcomes the shortcomings of its predecessors and offers the advantages of non-volatility, two or multi-level storage, non-destructive reading, free-of-power maintenance and potential high radiation hardness.

The invention discloses a microfluidic-based magnetic bead separation device and method in the field of microfluidic application. An immunomagnetic bead solution inlet pipe, a bacterial mixed solution inlet pipe and a sterile water inlet pipe are integrated into a main inlet pipe, a microfluidic chip is provided with an annular pipe connected to the main inlet pipe and a main outlet pipe, a micro-pump and a sixth solenoid valve are connected to the annular pipe in series, an annular colossal magnetoresistance chip set sleeves the annular pipe, the annular pipe is provided with a groove communicated with the interior of the annular pipe and integrated to the annular pipe, a right ahead side, a right astern side and an outlet side of the groove are provided with electromagnets, an outlet of the main outlet pipe is respectively connected to a mixed solution outlet pipe and a sterile water outlet pipe, through electromagnet and solenoid valve turning-on and off, magnetic beads are gathered, an immunization magnetic bead amount is detected through a magnetoresistance chip, the inner wall of the pipe is cleaned by sterile water and simultaneously, the immunomagnetic beads are collected.

The invention discloses a manganite epitaxial thin film. The manganite epitaxial thin film is of a layered structure and comprises a single crystal basal layer and a manganite epitaxial thin film layer growing on the single crystal basal layer in a stacking manner. The invention aslo discloses a method for preparing the manganite epitaxial thin film by adopting a chemical solution approach. The adjustment of physical properties such as ferromagnetic/paramagnetic curie temperature and electrical transport property of the manganite epitaxial thin film is realized by adjustment of the components. The manganite epitaxial thin film has ferromagnetic property and electrical transport and colossal magnetoresistance effects, is compatible with a semiconductor integrated circuit technology and has wide application prospect in information industries such as magnetoresistance sensors and magnetic memory materials. The preparation method is simple to operate and low in cost; the manganite epitaxial thin film is good in repeatability and suitable for large-scale production.

The invention provides a novel lightning stroke current measuring device. The novel lightning stroke current measuring device comprises a colossal magnetoresistance current sensor for obtaining a voltage signal corresponding to the size of lightning stroke current, a front amplifier for amplifying the voltage signal obtained by the colossal magnetoresistance current sensor, a peak value demodulation circuit for detecting the peak value of the voltage signal so as to obtain a peak value signal, and a processor for obtaining the value of the lightning stroke current according to the peak value signal. The lightning stroke current measuring device has the advantages of simple structure, low cost, high precision and convenient installation, is suitable for low-power occasions, and can be widely applied to occasions in need of lightning stroke current or flashover current measurement, such as high speed railways, intelligent power networks, base stations and the like.

The invention provides a bismuth micron particle. The particle is a bismuth elementary substance, the particle size of the particle is 1 micron to 3 microns, and the particle is spherical or polyhedral. The method for manufacturing the particle comprises the following steps that a bismuth source and template agents are added to glycol and stirred to be completely dissolved, then the pH value of a solution is adjusted to be larger than 10 while stirring is carried out, after solute is completely dissolved, the solution is transferred into a closed polytetrafluoroethylene lining high-pressure reaction still, a reaction is carried out for more than 10 h under the condition of 160 DEG C to 200 DEG C, a product is centrifuged or filtered after the reaction is finished, residual solute is removed through washing, and the bismuth micron particle can be obtained through drying and cooling. The positive colossal magnetoresistance of the bismuth micron particle is more than 700 percent at low temperature, the positive colossal magnetoresistance of the bismuth micron particle is more than 180 percent at indoor temperature, and the manufacturing method of the bismuth micron particle is simple.

A preparation method of a colossal magnetoresistance effect Fe-Ti-O amorphous film adopts an ultra-high vacuum three-target codeposition magnetron sputtering coating machine for the preparation, and comprises the following steps: 1) mounting a Ti target and a Fe target on a target head of the coating machine respectively; 2) mounting a glass substrate on a substrate support; 3) turning on the magnetron sputtering device to vacuumize a sputtering chamber; 4) introducing mixed gas of O2 and Ar into the vacuum chamber to obtain a vacuum degree of 1 Pa of the vacuum chamber; 5) turning on a sputtering direct-current power supply, applying a current and a voltage to the Ti target and the Fe target; 6) opening a baffle plate of the substrate, rotating the substrate support, growing a film on the substrate; 7) after the sputtering is completed, injecting nitrogen into the vacuum chamber to obtain the prepared target product. The advantages of the invention are that: the process method is simple and easy to carry out, and the prepared film has high room-temperature magnetoresistance effect; the production cost is low, and the method is applicable to large-scale popularization and application.

The invention discloses a multiferroic composite magnetoelectric film and a preparation method thereof. The magnetoelectric composite film comprises a (001)PMN-PT substrate and a manganese-lanthanum oxide film (La1-xRexMnO3, Re=Sr, Ca, Ba and the like) deposited on the substrate. The invention belongs to the technical field of films. The method is preparing a manganese-lanthanum oxide epitaxial film on the (001)PMN-PT substrate through a wet chemical method (sol-gel method), and comprises the following steps: preparing a precursor solution, carrying out pre-treatment on the PMN-PT substrate and carrying out deposition and heat treatment on the film on the substrate, and finally obtaining the needed composite magnetoelectric film. The manganese-lanthanum oxide/(001)PMN-PT composite magnetoelectric film disclosed by the invention has ferromagnetic performance, electrical transport performance and colossal magnetoresistance effect, and has a wide application prospect in the information industry and the devices of magneto-resistance sensors, ferromagnetic film devices, spin electronic devices, magnetic memory materials and the like.

The invention relates to a device and a method for measuring magnetic induction intensity, in particular relates to a device and a method for measuring the magnetic induction intensity based on colossal magnetoresistance effect. The measuring device comprises an electromagnetic shielding device, a first loop and a second loop, wherein, the first loop comprises a colossal magnetoresistance device,a Helmholtz coil and a first power supply device; and the second loop comprises a Huygens electrical bridge and a second power source device. In the invention, the distinct effect of the colossal magnetoresistance effect is utilized, and the Helmholtz coil is adopted to provide the reversed magnetic field for balancing the magnetic field to be detected, when the Huygens electrical bridge is in balance, the numerical value of the magnetic field to be detected is equal to that of the Helmholtz coil, but the direction is reverse; and the resistance of a colossal magnetoresistance device needs not to be calculated, thus the accuracy and the precision of calculation is improved; the electromagnetic shielding device is adopted to shield the environmental magnetic field, thus the measuring environment with zero magnetic field intensity is provided, and non-interference basic parameters are provided for the follow-up measurement, thereby being beneficial for improving the accuracy of measurement.

The invention discloses a method for improving the electrical transport property of La(1-x)CaxSryMnO3-based polycrystalline ceramic, which can improve the electrical transport property of perovskite polycrystalline ceramic through excellent electrical conductivity of graphene. The method comprises the steps as follows: synthesis of La(1-x)CaxSryMnO3 matrix powder, preparation of a synthetic phasematerial and preparation of the polycrystalline ceramic. The resistance of the prepared polycrystalline ceramic is reduced, so that the TCR (temperature coefficient of resistance) is increased, the metal-insulator transformation temperature (Tp) is closer to the room temperature, and the polycrystalline ceramic can be more widely applied to near-room-temperature electronic devices, CMR (colossal magnetoresistance) bolometers, infrared detectors and other devices.

A structure of a two-phase 2/2-pole permanent magnet rotor DC vibration motor. One end of the coil in the stator is connected to the commutator piece, the other end is connected to one pole of the power supply, and the brush is connected to the other pole of the power supply; the rotor is composed of an eccentric permanent magnet and a shaft sleeve, and the stator is composed of coils arranged in line on both sides of the fixed shaft Composition, the rotor rotates on the fixed shaft with the help of the rotor sleeve; the fixed shaft neither coincides with the center of mass of the rotor, nor is it on the line of the rotor magnetic poles, thus forming an eccentric vibrator; the single brush commutator provides the starting torque and Stable running torque. After balancing the center of gravity of the rotor, the same motor structure can also be used for ordinary power motors; the same single-brush commutator can also be used for permanent magnet DC motors with armature rotors, and rotor position sensors that replace ordinary permanent magnet rotor DC motors , directly drive the high-power commutation circuit. The motor structure can also be applied to the multi-pole permanent magnet rotor DC motor.