34 results about "Colossal magnetoresistance" patented technology

A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa2Cu3O7-X (YBCO), indium oxide (In2O3), or ruthenium oxide (RuO2), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN / Ti, Pt / TiN / Ti, In / TiN / Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr1-XCaXMnO3 (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.

The invention discloses a microfluidic-based magnetic bead separation device and method in the field of microfluidic application. An immunomagnetic bead solution inlet pipe, a bacterial mixed solution inlet pipe and a sterile water inlet pipe are integrated into a main inlet pipe, a microfluidic chip is provided with an annular pipe connected to the main inlet pipe and a main outlet pipe, a micro-pump and a sixth solenoid valve are connected to the annular pipe in series, an annular colossal magnetoresistance chip set sleeves the annular pipe, the annular pipe is provided with a groove communicated with the interior of the annular pipe and integrated to the annular pipe, a right ahead side, a right astern side and an outlet side of the groove are provided with electromagnets, an outlet of the main outlet pipe is respectively connected to a mixed solution outlet pipe and a sterile water outlet pipe, through electromagnet and solenoid valve turning-on and off, magnetic beads are gathered, an immunization magnetic bead amount is detected through a magnetoresistance chip, the inner wall of the pipe is cleaned by sterile water and simultaneously, the immunomagnetic beads are collected.

An asymmetric memory cell and method for forming an asymmetric memory cell are provided. The method comprises: forming a bottom electrode having a first area; forming an electrical pulse various resistance (EPVR) material overlying the bottom electrode; forming a top electrode overlying the EPVR layer having a second area, less than the first area. In some aspects the second area is at least 20% smaller than the first area. The EPVR is a material such as colossal magnetoresistance (CMR), high temperature super conducting (HTSC), or perovskite metal oxide materials. The method further comprises: inducing an electric field between the electrodes; inducing current flow through the EPVR adjacent the top electrode; and, in response to inducing current flow through the EPVR adjacent the top electrode, modifying the resistance of the EPVR. Typically, the resistance is modified within the range of 100 ohms to 10 mega-ohms.

The invention discloses a CoxC1-x / Co / Si multilayer granule membrane material with giant magneto resistance effect in a magnetic field under room temperature, belonging to magnetic quantity sensor material. A Co layer and a CoxC1-x layer are sequentially deposited on an n-Si substrate at lattice orientation 100 through laser pulse. The positive colossal magnetoresistance effect of the material under room temperature with external magnetic filed of 0.01T can reach +20.6%. With the advantages of low price and excellent performance, the material is good material for a magnetic sensor.

The present invention discloses a hypothermal alkali liquation synthesis process of monocrystalline nanometer materials of oxygenous metal inorganic compounds. The compound oxide monocrystalline nanometer materials are synthesized with the inorganic salt of a metal and the oxide of another metal as main materials, melted mixed alkali as solvent, at atmospheric pressure and relatively low temperature of about 200DEG C. The present invention uses melted alkali as solvent for the first time and can synthesize oxide nanometer materials of different structures, compositions and functions, or monocrystalline nanometer materials of simple oxide and hydroxide. This process utilizes conventional materials and only controls the time and temperature during synthesis in favor of the industrial application. The produced monocrystalline nanometer materials includes ferroelectric and piezoelectric materials, ferromagnetic materials, semiconductive materials, ionic conductive materials, colossal magnetoresistance materials, high dielectric materials superconductors and etc. that can be applied to microelectronics, photoelectronics and communication.

A preparation method of a colossal magnetoresistance effect Fe-Ti-O amorphous film adopts an ultra-high vacuum three-target codeposition magnetron sputtering coating machine for the preparation, and comprises the following steps: 1) mounting a Ti target and a Fe target on a target head of the coating machine respectively; 2) mounting a glass substrate on a substrate support; 3) turning on the magnetron sputtering device to vacuumize a sputtering chamber; 4) introducing mixed gas of O2 and Ar into the vacuum chamber to obtain a vacuum degree of 1 Pa of the vacuum chamber; 5) turning on a sputtering direct-current power supply, applying a current and a voltage to the Ti target and the Fe target; 6) opening a baffle plate of the substrate, rotating the substrate support, growing a film on the substrate; 7) after the sputtering is completed, injecting nitrogen into the vacuum chamber to obtain the prepared target product. The advantages of the invention are that: the process method is simple and easy to carry out, and the prepared film has high room-temperature magnetoresistance effect; the production cost is low, and the method is applicable to large-scale popularization and application.

The invention discloses a zinc oxide field suppression resistance assembly safety assessment method. As an accurate and unified assessment and calculation method based on zinc oxide field suppression resistance site testing data does not exist at present, after the data are measured, the characteristic change degrees and the variation trends of assemblies can only be roughly seen. According to the zinc oxide field suppression resistance assembly safety assessment method, a newly-defined zinc oxide field suppression resistance breakdown voltage safety critical index K is deduced for serving as a judgment basis, the safety critical index is converted into a corresponding safety critical value Kact through the adoption of the maximum assembly field suppression energy and the maximum assembly allowing energy, after the breakdown voltage of the assemblies is obtained through site measurement, only the ratio of the minimum actual measurement assembly breakdown voltage to the average other-assembly breakdown voltage needs to the calculated, and then the ratio is compared with the safety critical value to be capable of obtaining an assembly safety assessment conclusion. By means of the zinc oxide field suppression resistance assembly safety assessment method, the aims of assembly safety calculation and assembly safety assessment after zinc oxide field suppression resistance site measurement are achieved, and the accuracy of the safety calculation and assessment conclusion is improved.