Spin
diode device (100; 300; 500) configured to detect a
microwave signal oscillating at a first target oscillation frequency or a second target oscillation frequency, the spin
diode device (100; 300; 500) comprising: a magnetic tunnel contact stack (150) arranged between a lower
electrode (130) and an upper
electrode (140), the magnetic tunnel contact stack (150) comprising: a lower
magnetic layer (102) with a lower magnetic film (312); a
tunnel barrier layer (104) above the lower
magnetic layer (102), wherein the
tunnel barrier layer (104) comprises an insulating material; and an upper
magnetic layer (106) above the
tunnel barrier layer (104), wherein the upper magnetic layer (106) comprises an upper magnetic film (322); wherein each of the lower magnetic film (312) and the upper magnetic film (322) has a
perpendicular magnetic anisotropy, wherein the lower magnetic film (312) comprises a first strength of
perpendicular magnetic anisotropy corresponding to a first natural
ferromagnetic resonance frequency, wherein the first natural
ferromagnetic resonance frequency corresponds to the first target oscillation frequency, wherein the upper magnetic film (322) comprises a second strength of
perpendicular magnetic anisotropy corresponding to a second natural
ferromagnetic resonance frequency, wherein the second natural ferromagnetic
resonance frequency corresponds to the second target oscillation frequency, where the second strength of perpendicular
magnetic anisotropy differs from the first strength of perpendicular
magnetic anisotropy, and where the second natural ferromagnetic
resonance frequency differs from the first natural ferromagnetic
resonance frequency.