73 results about "On resistance" patented technology

The invention provides a water leakage point positioning method and device based on resistance gradient calculation, and the method comprises the steps: obtaining a total resistance value and a tail end resistance value of a water leakage induction rope, and reading a preset resistivity parameter per unit length; calculating the distance of a water leakage point based on the total resistance value, the tail end resistance value and the resistivity parameter per unit length; according to the mapping relation between the length of the induction rope and the physical position established in the installation and debugging stage, the distance of the water leakage point is converted into the physical position described by corresponding 3D coordinates or characters; the physical position information is combined with real-time monitoring data to generate alarm prompt information containing a specific water leakage point location, and the alarm prompt information is output to a monitoring interface, so that accurate positioning of the water leakage point can be realized, the fault response time is remarkably shortened, and through a multi-thread data acquisition and dynamic alarm judgment mechanism, the real-time performance and the alarm accuracy of the system are improved; and the false alarm and repeated alarm frequency is reduced.

The invention relates to the technical field of semiconductor device testing, and discloses a dynamic on-resistance testing system and method, and the system comprises a current source module, a voltage source module, an acquisition module, a drive control module, and a main control module. The current source module is used for outputting a driving current to a tested device, the voltage source module is used for applying a bias voltage, the driving control module controls the on-off of the tested device, and the main control module coordinates the operation process of each module through a preset operation time sequence, so that the staged measurement of the dynamic on-resistance is realized. According to the system, through time sequence synchronous control and modular design, the problems of inaccurate sampling points caused by time sequence deviation, test errors caused by lead interference and insufficient power supply precision in the prior art are solved, and measurement results of initial on resistance, leakage current and steady-state on resistance of tested equipment can be accurately obtained; and reliable data support is provided for device performance evaluation.

The utility model discloses a resistor feeding mechanism on a resistor assembly machine, which comprises a positioning plate, the top of the positioning plate is fixedly connected with a lifting platform through a telescopic piece, the top of the lifting platform is symmetrically provided with vertical plates, a feeding wheel is rotatably connected between the two vertical plates, a feeding cylinder is arranged above the feeding wheel, and the feeding cylinder is connected with the lifting platform. A material guiding cylinder is welded to the top of the lifting table through a frame rod, three inclined plates are installed in the material guiding cylinder, and a buffering assembly is installed at the position, corresponding to a discharging opening in the left end of the material guiding cylinder, of the material guiding cylinder. The resistor feeding mechanism on the resistor assembly machine is reasonable in structural design and convenient to use, can adjust the feeding height so as to adapt to the station heights of different resistor assembly machines, has a relatively wide application range, can provide a relatively good buffering effect on falling resistors, can prevent the resistors falling from high positions from being damaged due to relatively large impact force, and is suitable for popularization and application. And a good use effect is achieved.

The invention relates to a resistance measuring device and a resistance measuring method based on the resistance measuring device, the resistance measuring device comprises a first voltage source, a second voltage source, a first range resistor and a current acquisition module, the first voltage source, the current acquisition module and a to-be-measured resistor are connected in series to form a first loop, the second voltage source, the first range resistor and the current acquisition module are connected in series to form a second loop, and the first range resistor is a resistance-variable range resistor. According to the embodiment of the invention, the measurement accuracy can be improved, the resistance measurement range is expanded, and the measurement resolution is improved.

The invention relates to the technical field of plant leaf measurement, and provides a plant leaf thickness measuring instrument based on resistance feedback, which comprises a main body, the main body is connected with a measuring rod through a vertical driving structure, and the bottom of the measuring rod is connected with a measuring contact through a resistance detection unit. The vertical driving structure and the resistance detection unit are electrically connected with the controller. And the blade fixing device is arranged on the main body and corresponds to the lower part of the measuring contact. Through closed-loop control combining a vertical driving structure and real-time resistance sensing, constancy of the contact pressure between the measuring head and the blade can be realized, so that manual force application errors are eliminated, excessive compression of the blade is avoided, and a high-precision, high-repeatability and lossless thickness measuring result can be obtained.

The invention provides a method for acquiring autonomous propulsion performance of a flexible deformable body based on a resistance correction surface element method. The method comprises the following steps: (1) determining physical characteristics and initial parameters of the flexible deformable body and initial conditions and flow parameters of fluid; (2) carrying out direct numerical simulation on the flexible deformable body by using a classical surface element method to obtain the fluid pressure intensity borne by the object surface; (3) calculating resistance compensation applied to the center of mass of the flexible deformation body through an equivalent resistance model; (4) calculating the autonomous forward swimming speed when the flexible deformable body stably swims through the balance of the pressure and the equivalent resistance borne by the flexible deformable body in the swimming process; and (5) obtaining the hydrodynamic power and efficiency of the flexible deformable body according to the stress and the cruise speed of each part of the flexible deformable body. According to the method, the rapidity and convenience of the surface element method in calculating the fluid-solid coupling problem can be kept, and meanwhile, the error of the classical surface element method in practical application is remarkably improved.

The application provides a mechanism small cigar chip structure screening method and device based on suction resistance stability, which comprises primary screening, secondary screening and proportional weighing mixing of mechanism small cigar chips, and through targeted structure screening and mixing according to a certain proportion of the mechanism small cigar chips, suitable mechanism small cigar chip structures are produced, the suction resistance of the mechanism small cigar is reduced and stabilized, and the problems of high and unstable suction resistance of the existing mechanism small cigar are solved.

The invention discloses a large-size and low-resistivity 4H-SiC monocrystal crystal bar and a 4H-SiC monocrystal substrate, and belongs to the technical field of 4H-SiC monocrystal preparation. The thickness of the 4H-SiC single-crystal crystal bar is 15 mm or above, the resistivity of the 4H-SiC single-crystal crystal bar at any position is larger than 6 m omega.cm and smaller than 12 m omega.cm, and the resistivity variation coefficient of any cross section of the 4H-SiC single-crystal crystal bar is smaller than or equal to 5%. The 4H-SiC monocrystal crystal bar is high in thickness, lower in resistivity and more uniform in distribution, the on resistance of a power device can be remarkably reduced, and the use stability of the device is improved.

The invention provides an overvoltage tuning method and system based on parallel cooperation of a resistor and an arc suppression coil. The method comprises the following steps: judging an event type according to a neutral point voltage; when the event type is that the operation mode is changed, performing first tuning based on a first preset rule, and judging whether the neutral point voltage after the first tuning is greater than a threshold value or not; if the neutral point voltage after the first tuning is greater than the threshold value, performing secondary tuning based on a second preset rule, and judging whether the neutral point voltage after the secondary tuning is less than the threshold value; if the voltage of the neutral point after secondary tuning is larger than or equal to the threshold value, a second preset rule continues to be executed until the voltage of the neutral point after secondary tuning is smaller than the threshold value, and if the voltage of the neutral point after secondary tuning is smaller than the threshold value, it is judged that damping succeeds, and the resistance grounding device is reset. According to the invention, a unified zero-sequence impedance regulation and control strategy is established through cooperation of arc suppression coil operation and damping, so that the probability of occurrence of tuning overvoltage is reduced.

The present invention relates to a motor winding temperature rise test device based on a resistance method, comprising a switch, a contactor KM1, a contactor KM2, a resistance measuring instrument F1, a resistance measuring instrument F2 and three wiring terminals XT1, XT2 and XT3; each contactor is provided with at least two normally open contacts and two normally closed contacts, and the normally open contacts and the normally closed contacts are interlocked; the wiring terminals XT2 and XT3 are respectively connected to the two ends of the resistance measuring instrument F2 through two of the normally closed contacts of the contactor, and the wiring terminals XT1 and XT2 are respectively connected to the two ends of the resistance measuring instrument F1 through the other two normally closed contacts of the contactor on the one hand, and are also respectively powered out through two of the normally open contacts of the contactor on the other hand; the switch is used to switch the power-on state / power-off state of the control coils of all contactors. The present invention can realize that one person can complete the test independently, and both cold and hot winding resistance tests can be completed quickly, and can be applied to a variety of loads that need to test the temperature rise of the winding.

A load is detachably connected to a device connector of a switch device. A resistance value of a switch circuit when a sub-switch is ON is greater than an ON resistance value of a main switch. A microcomputer acquires node voltage information indicating a node voltage of a connection node located downstream of the main switch and the sub-switch from a voltage detection unit in a state where the main switch is OFF and the sub-switch is ON. The microcomputer determines whether a switch current that flows via the main switch when the main switch turns ON will be less than a current threshold value, based on the acquired node voltage information.

The utility model discloses a resistance law teaching demonstration teaching aid belongs to teaching aid technical field. The teaching aid includes backplate, is equipped with direct current source, electric bulb, ammeter, voltmeter and various resistances on backplate, and the both ends of each resistance are connected with resistance terminal post. The positive and negative poles of direct current source are connected with the wire with binding jaw, and the wire is connected with electric bulb and ammeter in series, and also can be connected with manual switch in series. Various resistances cover material, thickness, length, short and temperature comparison resistance, and can comprehensively show the influence of different factors on resistance. The voltmeter is used for measuring circuit voltage. Through the teaching aid, the relation between resistance and material, length, cross -section area and temperature can be directly shown, and the bright and dark of electric bulb and the change of ammeter value are matched, help student to understand resistance law, and operation is safe and convenient, and the teaching effect is improved.

The present application relates to a kind of high reliability chip resistor with surface structure, including substrate and the end electrode of two ends, resistance layer between two side end electrodes, and protective layer is arranged on resistance layer, further include being arranged on substrate and being located under resistance layer several strip microstructure, strip microstructure area is arranged with laser adjustment group area, resistance layer is formed by laser cutting interval reservation two end part resistance area along strip microstructure and forms zigzag resistance path.The present application adopts strip microstructure to effectively avoid the formation of ion migration channel by separating two side resistance, glass microstructure layer enhances the insulation of laser incision, reduces the breakdown risk caused by potential difference;Using strip surface structure occupies smaller space than parallel laser incision, the resistance range that can be adjusted is larger;Change the direction of potential ion migration channel from horizontal to along strip surface structure, make it exist larger angle with electric field direction, slow down the speed of ion migration.

This invention relates to a method for detecting wire harness puncture and crimping quality based on resistance measurement. First, X-ray imaging is used to select samples of various defects and qualified products. The resistance values ​​of these samples are measured to establish a correspondence between resistance values ​​and defects, which is then used by a computer for judgment during subsequent product testing. Next, a resistance detection system is used to test the resistance of a group of wire harnesses, obtaining the parallel resistance values ​​of multiple wires. Using Ohm's law and the series-parallel relationship of resistances, the resistance value of a single wire in the product under test can be obtained. This value is then compared with a comparison threshold set in the computer to quickly determine whether the product under test is qualified or its defect type. A robotic arm then removes and discards unqualified products. Compared to existing X-ray imaging methods, this method significantly improves detection efficiency.

The utility model discloses a connector and a motor, and the connector comprises a housing which is provided with an accommodation cavity and a terminal groove communicated with the accommodation cavity; the terminal is suitable for penetrating through the accommodating cavity and extending into the terminal groove; the resistor piece is located in the containing cavity, and the two ends of the resistor piece are connected with the terminals. According to the connector provided by the utility model, the resistor is integrated in the connector, extra components such as insulated wires, heat-shrinkable sleeves and ribbons are not needed, the overall production cost of the connector is reduced, the number of connecting points is reduced due to the integrated design, the risk of poor contact is reduced, and the reliability of the connector is improved. The influence of the external environment on the resistor is avoided, the reliability of the connector is improved, the steps of external welding, heat-shrinkable sleeve protection and the like are reduced, and the assembly process is greatly simplified.

The application discloses a method and system for diagnosing a turn-to-turn short circuit of a double-water internally-cooled generator rotor based on an intelligent resistance method.The method comprises the following steps: collecting rotor voltage, rotor current, rotor total water inlet flow rate, rotor total water inlet temperature and rotor total water outlet temperature sample parameters, and calculating a rotor resistance value; taking the rotor total water inlet flow rate, the rotor total water inlet temperature and the rotor total water outlet temperature as input quantities, taking the rotor resistance as an output quantity, submitting the sample to a machine learning model training, and obtaining a trained model; obtaining real-time values of the rotor voltage, the rotor current, the rotor total water inlet flow rate, the rotor total water inlet temperature and the rotor total water outlet temperature, and calculating a real-time value of the rotor resistance value; taking the real-time values of the rotor total water inlet flow rate, the rotor total water inlet temperature and the rotor total water outlet temperature as input quantities, inputting the trained model, and obtaining a rotor resistance fitting value through prediction; calculating a deviation value between the real-time value and the fitting value of the rotor resistance, determining whether the rotor has a turn-to-turn short circuit according to the deviation value, and marking a turn-to-turn short circuit severity.The method has low implementation difficulty, and the diagnosis result is accurate and reliable.

The utility model relates to the technical field of electric power system disconnecting switch position state monitoring, in particular to a disconnecting switch double-confirmation device based on a resistance-type displacement sensor. The device comprises an isolation switch operator, the isolation switch operator is provided with a transmission shaft linked with an internal insulation pull rod, the outer end of the transmission shaft extends out of an isolation switch operator shell, and the outer end of the transmission shaft is fixedly connected with a transition shaft; the transition shaft is connected with a pull rod of a resistance-type displacement sensor through a transmission mechanism, the resistance-type displacement sensor is in communication connection with an upper computer, and opening and closing signals of the disconnecting switch are detected through the resistance-type displacement sensor and the upper computer. According to the utility model, the resistance-type displacement sensor is used in the isolating switch double-confirmation device, so that whether opening and closing are in place can be accurately detected. Meanwhile, key parameters such as closing and opening speed, closing and opening time, contact travel and the like can be detected, and the complete motion state of the isolating switch can be visually reflected.

The utility model discloses an automatic test system with adjustable resistance, which comprises a controller, a multi-port connector, a relay and a resistance selection board which are electrically connected in sequence, and is characterized in that the controller sends a first control signal to the relay based on the multi-port connector so as to enable the relay to be activated, and controls the resistance selection board based on target control logic so as to enable the relay to be activated; at least two groups of resistor modules are arranged on the resistor selection board, each group of resistor modules comprises a plurality of resistors, and each resistor is controlled based on an independent switch; the resistor selection board is electrically connected with a to-be-tested product, and after the resistor selection board is controlled, different switches on the resistor selection board are controlled to enable different resistors to be combined into different target combined resistance values based on target control logic, so that the to-be-tested product is tested under the target combined resistance values. According to different test requirements, different target combined resistance values can be combined by controlling the switches on the resistance selection board, and the test flexibility of the to-be-tested product is improved.

The invention provides a device and method for measuring the depth of drilling and completion fluid invading into a rock core based on resistance testing. The device for measuring the depth of drilling and completion fluid invading into the rock core comprises a shaft drilling and completion fluid flowing simulation module, a drilling and completion fluid invading simulation module, a temperature and pressure control module, a resistance measuring module and a recovery module. The shaft drilling and completion fluid flowing simulation module, the drilling and completion fluid invasion simulation module and the recovery module are connected in sequence; the drilling and completion fluid invasion simulation module is connected with the temperature and pressure control module and the resistance measurement module. The device can truly simulate the dynamic invasion process of the well drilling and completion fluid in the underground high-temperature and high-pressure environment to the reservoir when the well drilling and completion fluid flows, performs non-destructive measurement by using the resistance measuring instrument, realizes accurate quantitative determination of the depth of the drilling and completion fluid invading the rock core, and is suitable for deep oil and gas reservoir drilling and completion fluid pollution evaluation and reservoir protection.

According to the HEMT device provided by the invention, the N-type doped semiconductor adjusting layer and / or the P-type doped semiconductor adjusting layer are / is arranged, and the doping polarity, the doping concentration and the thickness can be controlled, so that the 2DEG concentration can be accurately regulated and controlled, the electric field regulation and control capability can be improved, gradient electric field distribution can be realized, and the balance between on resistance (Ron) and breakdown voltage (BV) can be realized; electric leakage and surface defects can be reduced; the dual functions of a protection layer and a field plate are realized; good processing compatibility is realized; the structure design space is higher; and the performance and the reliability of the device can be improved.

The utility model provides an electric washing timer which comprises a shell, a movable reed, a left fixed reed and a right fixed reed, the movable reed, the left fixed reed and the right fixed reed are arranged in the shell, a switching mechanism is further arranged in the shell and comprises a program switching plate, the program switching plate is provided with a pair of abutting surfaces, and the abutting surfaces elastically abut against the left fixed reed and the right fixed reed respectively. The device is characterized in that the contact surface comprises an upper straight line segment, a lower straight line segment and an inclined segment connecting the upper straight line segment and the lower straight line segment; the switching mechanism further comprises an adjusting shaft, the adjusting shaft is movably matched with the program switching plate, the program switching plate can be moved up and down by rotating the adjusting shaft, and the abutting positions of the left fixed reed and the right fixed reed on the abutting face are adjusted. The left fixed reed and the right fixed reed of the washing timer can elastically abut against any position on the inclined section, so that various washing programs can be set on the inclined section, and the situation that interference or not-in-place abutting occurs when the washing programs are added through a step-shaped abutting face in the prior art is avoided.

The utility model discloses a SJ MOSFET device of low on resistance, include: epitaxial layer, epitaxial layer longitudinal is equipped with at least two first conductive type column and at least one second conductive type column, and first conductive type column and second conductive type column interval arrangement, at least two gate grooves, and gate groove is located respectively on epitaxial layer and is located on first conductive type column upper portion correspondingly, at least two connecting holes, and at least two connecting holes interval are located between two gate grooves, SJ MOSFET device of low on resistance of the utility model is equipped with multiple connecting holes between gate groove, can reduce the distance between gate groove and connecting hole, has reduced on resistance, has promoted the reliability of device.

A semiconductor device includes a semiconductor layer, a drift region formed in the semiconductor layer, and a dielectric film formed in the drift region. The drift region includes a first side well, a second side well and a well stack. The first side well has a first type conductivity. The second side well has the first type conductivity. The well stack is disposed laterally between the first side well and the second side well, and includes a plurality of intermediate wells that are stacked from top to bottom. A topmost one of the intermediate wells has a second type conductivity opposite to the first type conductivity, and covers bottom and side surfaces of the dielectric film. Two adjacent ones of the intermediate wells have different type conductivities.

A time-domain inter-turn protection method and system for reactors based on resistance and inductance parameter identification is proposed. This method obtains the instantaneous values ​​of the three-phase currents at the beginning and end of the reactor within a sliding window. A current matrix is ​​constructed using the instantaneous values ​​of the three-phase currents at the beginning and their rate of change. The instantaneous voltage across the neutral point reactor is calculated based on the inductance value of the small reactor at the neutral point and the rate of change of the instantaneous value of the self-generated zero-sequence current at the end of the reactor within the sliding window. A voltage vector is constructed using the voltage difference between the instantaneous voltage across the reactor within the sliding window and the instantaneous voltage across the small reactor at the neutral point. The equivalent resistance and equivalent inductance of the reactor are calculated using the current matrix and voltage vector. When the equivalent resistance is greater than a resistance threshold and the equivalent inductance is less than an inductance threshold, and this condition persists for a set duration, an inter-turn fault triggers the protection action. The protection method exhibits high sensitivity and is reliable even when the reactor core is saturated, the line distributed capacitance is high, or the reactor oscillates, without malfunctioning. It is also unaffected by new power systems.

The invention relates to a power supply method of a photovoltaic module based on resistance difference circuit break protection and a structure and application thereof. The power supply method comprises the steps that when a sub-battery breaks down, a bypass conduction band provides a bypass, so that current bypasses the sub-battery which breaks down, and the other sub-batteries work normally; the sub-cell is prepared from a perovskite cell through laser cutting; and the resistance ratio of the bypass conduction band to the sub-battery is 200 times. The technical problem to be solved is how to provide a power supply method for a photovoltaic module capable of reducing the voltage drop of series resistors.

The invention relates to a GaN-based HEMT epitaxial structure with a novel GaN high-resistance layer design, and belongs to the technical field of semiconductor devices, the GaN-based HEMT epitaxial structure comprises a substrate, a buffer layer, a high-resistance layer and a channel layer, the high-resistance layer is positioned on the buffer layer, the high-resistance layer comprises a first functional sub-layer, a second functional sub-layer and a third functional sub-layer, the channel layer is positioned on the high-resistance layer, and the channel layer is positioned on the first functional sub-layer. The barrier layer is located on the high-resistance layer, and the cap layer is located on the barrier layer. After the structure is adopted, the GaN-based HEMT epitaxial structure has the following advantages that the design of the high-resistance layer effectively improves the voltage resistance performance and the longitudinal current blocking capability of the GaN-based HEMT epitaxial structure, so that the GaN-based HEMT epitaxial structure is suitable for a higher-voltage application scene, meanwhile, the on resistance of a device is relatively reduced, and the current transverse transmission performance of the device is improved.

The invention provides a method for detecting the welding quality of a high-precision shunt, and belongs to the technical field of nondestructive testing of electronic components. Aiming at the problems of low coverage rate, poor reliability and the like of the existing destructive sampling inspection, a non-destructive full inspection scheme based on resistance measurement is provided. Comprising the steps that an existing high-precision resistance tester capable of eliminating thermoelectric force is adopted, and a shunt welding area is connected through a four-wire system test interface of the existing high-precision resistance tester; a 1A test current (adaptive to a range of 10-100 [mu] Omega) is set, and thermoelectric force interference is eliminated by using a current commutation function; dynamically acquiring forward and reverse voltage drops and calculating an average resistance value; and the welding quality is judged by comparing the resistance value with a preset qualified interval. And if the resistance value exceeds the limit, judging that missing soldering or unsoldering exists. According to the method, welding defect identification with the micro-ohm-level precision is achieved, the detection precision reaches + / -5 micro ohms, the single detection time is shorter than 1 second, the problems of destructiveness and low coverage of traditional sampling inspection are solved, and the method can be applied to full-process quality control of micro-resistance elements such as a shunt for a new energy vehicle.

The invention belongs to the technical field of film material measurement, and particularly relates to a metal film thickness measurement method based on a resistance method. According to the method, a plurality of groups of standard films with different thicknesses and corresponding electrodes are integrally prepared on a single substrate at one time, so that high consistency of all standard samples on the substrate, the electrodes, the deposition process and the surface area is ensured, and system errors caused by sample differences in a traditional dispersion calibration method are greatly eliminated; the established resistance-thickness standard curve is more accurate and reliable; in the whole measurement process, resistance measurement is carried out through the electrode which is prepared in advance and integrated with the thin film, and an external measurement probe is only in contact with the electrode, so that direct mechanical contact with the surface of the fragile metal thin film is completely avoided, the problems of contact damage and errors caused by contact resistance are thoroughly solved, and the method belongs to real nondestructive detection; the measurement error can be controlled within 10%; complicated and expensive special test equipment is not needed, the operation process is simple and convenient, and the method is easy to popularize in industrial circles and laboratories.

The invention provides a silicon carbide MOSFET device and a process thereof. The silicon carbide MOSFET device comprises an N + substrate and an N-epitaxial layer, a hard mask is arranged at the top of the N-epitaxial layer, a PWELL region, a JFET region and a channel region are arranged on the N-epitaxial layer, and a highly-doped P-type channel protection region I is arranged on the side wall of the PWELL region at the junction of the channel region and the JFET region. According to the silicon carbide MOSFET device and the process thereof provided by the invention, the barrier height of the channel region and the JFET region is increased through the channel protection region I, and the DIBL effect is effectively prevented, so that the electric leakage of the device is reduced, and the reliability of the device is improved; the first channel protection region improves the barrier height of the interior of the PWELL region and the JFET region when the negative gate voltage is turned off, and effectively prevents the occurrence of the DIBL effect in the body, thereby reducing the electric leakage of the device, and improving the reliability of the device. The doping concentration of the channel region is not influenced, so that the influence on parameters such as threshold voltage and on resistance of the device is small; and the process is compatible with the conventional planar SiC MOSFET.

The invention discloses a negative resistor based on resistor-capacitor alternating current coupling bias, the negative resistor is formed by cross coupling connection of MOS tubes, the bias voltage is isolated from the actual input voltage by using a resistor-capacitor alternating current coupling bias mode, the bias precision and stability are significantly improved, the overall performance of the negative resistor is further enhanced, and the mismatch effect is inhibited. In addition, negative resistor work is directly carried out without source electrode degeneration, so that the power consumption of the negative resistor is greatly improved, high energy efficiency is realized, and the structure is obviously superior to that of a traditional structure.