92results about How to "High blocking voltage" patented technology

A power semiconductor device, having a first semiconductor region, and a second semiconductor region; mounted with a first electrode pad on a semiconductor substrate main surface at the inside surrounded by the third semiconductor region, mounted in the second semiconductor region, and a multilayer substrate having first and second wiring layers, to take out an electrode of the semiconductor chip; joining the first wiring layer part for the first electrode, mounted on the multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by the third semiconductor region, and the first electrode pad, by a conductive material; joining the first wiring layer part for the first electrode, and the second wiring layer at a conductive part; and extending the second wiring layer to the outside of a region opposing the semiconductor substrate main surface at the inside surrounded by the third semiconductor region.

A normally-off cascode power switch circuit is disclosed fabricated in wide bandgap semiconductor material such as silicon carbide or gallium nitride and which is capable of conducting current in the forward and reverse direction under the influence of a positive gate bias. The switch includes cascoded junction field effect transistors (JFETs) that enable increased gain, and hence blocking voltage, while minimizing specific on-resistance.

A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+ drain column extends down through the super junction structure and the P-epi to connect to the N+ substrate to make the device a bottom drain device. N+ source column and P+ gate column extend through the super junction but stop at the P-epi layer. A gate-drain avalanche clamp diode is formed from the bottom the P+ gate column through the P-epi to the N+ drain substrate.

A high power FET switch comprises an N− drift layer, in which pairs of trenches are recessed to a predetermined depth; oxide side-walls extend to the trench bottoms, and each trench is filled with a conductive material. N+ and metal layers on opposite sides of the drift layer provide drain and source connections for the FET, and the conductive material in each trench is connected together to provide a gate connection. A shallow P region extends across the bottom and around the corners of each trench's side-walls into the drift layer. The application of a sufficient gate voltage causes holes to be injected from the shallow P regions into the N− drift layer, thereby modulating the drift layer's conductivity and lowering the device's on-resistance, and enabling current to flow between the drain and source connections.

Disclosed are a variety of junction termination structures for high voltage semiconductor power devices. The structures are specifically aimed at providing a high breakdown voltage while being constructed with a minimal number of process steps. The combination of an RIE etch and/or implantation and anneal process with a finely patterned mesh provides the desired radial gradient for maximum breakdown voltage. The structures provide control of both the conductivity and charge density within the region. These structures can beneficially be applied to all high voltage semiconductor device structures, but are of particular interest for wide bandgap devices as they tend to have very high breakdown fields and scaled dimensions of the depletion layer width.

A III-nitride device is provided comprising a semiconductor substrate; a stack of active layers on the substrate, each layer comprising a III-nitride material; a gate, a source and a drain contact on the stack, wherein a gate, a source and a drain region of the substrate are projections of respectively the gate, the source and the drain contact in the substrate; and a trench in the substrate extending from a backside of the substrate (side opposite to the one in contact with the stack of active layers) to an underlayer of the stack of active layers in contact with the substrate, the trench completely surrounding the drain region, being positioned in between an edge of the gate region towards the drain and an edge of the drain region towards the gate and having a width such that the drain region of the substrate is substantially made of the semiconductor material.

In the SiC vertical MOSFET having a low-concentration p-type deposition film provided therein with a channel region and a base region resulting from reverse-implantation to n-type through ion implantation, dielectric breakdown of gate oxide film used to occur at the time of off, thereby preventing a further blocking voltage enhancement. This problem has been resolved by interposing of a low-concentration n-type deposition film between a low-concentration p-type deposition film and a high-concentration gate layer and selectively forming of a base region resulting from reverse-implantation to n-type through ion implantation in the low-concentration p-type deposition film so that the thickness of deposition film between the high-concentration gate layer and each of channel region and gate oxide layer is increased.

The invention discloses a groove gate VDMOS device integrated with a Schottky diode and belongs to the technical field of semiconductor devices. According to the groove gate VDMOS device integrated with the Schottky diode, an additional structure composed of a piece of Schottky junction metal and a body electrode conductive material is additionally arranged on each of drift regions on the two sides of a groove gate structure of a conventional groove gate VDMOS device, the upper portion of each piece of Schottky junction metal is in contact with source electrode metal, the lower portion of each piece of Schottky junction metal is in contact with a corresponding body electrode conductive material, and the lower surface and the lateral sides of the each piece Schottky junction metal are in contact with a corresponding drift region to form a Schottky junction; dielectric layers are arranged between the lateral sides of each body electrode conductive material and a corresponding drift region and between the bottom surface of each body electrode conductive material and the corresponding drift region. Compared with a traditional groove gate VDMOS device with the same size, the groove gate VDMOS device integrated with the Schottky diode has the advantages that due to the fact that higher drift region dosage concentration is adopted under the condition of same puncture voltage, turn-on resistance is reduced obviously, and the reverse recovery property of the diode is improved obviously.

An electronic power circuit includes at least one power semiconductor whose control inputs are connected to a trigger device and a power supply which, on the output side, is connected to terminals of the trigger device and, on the input side, is connected to an accessory device to which a supply voltage is applied. The power semiconductor is implemented as a self-conducting power semiconductor, which economically reduces the forward power losses and switching losses of an electronic power circuit.

A switch module includes a collector connection, an emitter connection, and a gate connection. The switch module includes a plurality of parallel connected switching elements, e.g., insulated-gate bipolar transistors, each having a collector electrode electrically connected to the collector connection, an emitter electrode electrically connected to the emitter connection, and a gate electrode electrically connected to the gate connection. A fault protection device is operatively electrically connected between the gate connection and the switching elements and comprises passive electrical components which are selected such that in the event of a fault in at least one of the plurality of switching elements, a gate-emitter voltage is provided to the gate electrodes of non-faulty switching elements in a passive manner.

The invention belongs to the semiconductor technology field and especially relates to an enhanced HEMT of an integrated SBD. A source electrode is Schottky contact and is not Ohmic contact of a general device. The source electrode is divided into two portions. One portion is formed by source electrode metal and is used for providing a high voltage blocking capability. The other portion is formed by metal and is used for providing a good current transport capability and reducing a grid voltage required by an inversion layer formed by a wide bandgap semiconductor under a gate medium so that stability is increased and simultaneously realization difficulty is reduced. When a source voltage is positive and a drain voltage is negative, the device forms one SBD and a rectification capability is possessed. When the device is applied in an inductive load circuit, at a turn-off moment, a reverse current in an inductive load is discharged from an integrated SBD pathway so that safety of the device and the whole circuit is protected and stability of the device and circuit is increased.

The invention relates to the technical field of power semiconductors, and discloses a silicon carbide LDMOS device suitable for integration and a manufacturing method thereof. The device comprises anN-type highly doped substrate on which a P-type epitaxial isolation buried layer and an N-type light doped drift region are sequentially arranged. A P- well region, a P + base region, an N + source region, a P- RESURF region and an N + drain region are distributed on the top of the drift region, wherein the P + base region and the N + source region are located in the P- well region. The P- RESURFregion is arranged between the P- well region and the N + drain region and close to N + drain region. A gate oxide layer is arranged on the drift region and covers a channel region formed by nesting the P- well region and the N + source region and the P- RESURF region. The novel silicon carbide LDMOS device has the characteristics of high blocking voltage, low conduction resistance and the like, and the process is completely compatible with the current vertical structure silicon carbide MOSFET so as to facilitate preparation of the silicon carbide power integrated circuit. Meanwhile, the RESURF technology is introduced to the device so as to increase the breakdown voltage of the device and reduce the conduction resistance of the device.

The invention provides a manufacturing method of a high-voltage quick-recovery diode, and the method comprises following steps of simultaneously implementing P-type impurity doping of an anode area and a terminal field limiting ring on the front surface of an N-type monocrystalline silicon sheet which is uniformly doped through field oxidation and ion injection; adopting a diffusion method to simultaneously implement the N-type impurity doping of a silicon sheet front surface groove interception ring and a silicon-sheet back surface cathode area after the anode area and the terminal field limiting ring area are protected by an oxidation film; implementing the heat diffusion propulsion simultaneously for the P-type impurities and N-type impurities in a high-temperature diffusion furnace; and implementing the back surface metallization after completing the front surface metallization, electron radiation minority carrier lifetime control and removal of a back surface damaged layer. According to the method, the machining steps are simple, and a deep N-type doped layer on the back surface of the silicon sheet is favorable for improving the reverse recovery characteristic of the diode and improving the blocking voltage.

The invention relates to a turn-off power semiconductor device comprising a plurality of thyristor cells, each thyristor cell comprising a cathode region; a base layer; a drift layer; an anode layer; a gate electrode which is arranged lateral to the cathode region in contact with the base layer; a cathode electrode; and an anode electrode. Interfaces between the cathode regions and the cathode electrodes as well as interfaces between the base layers and the gate electrodes of the plurality of thyristor cells are flat and coplanar. In addition, the base layer includes a gate well region extending from its contact with the gate electrode to a depth, which is at least half of the depth of the cathode region, wherein, for any depth, the minimum doping concentration of the gate well region at this depth is 50% above a doping concentration of the base layer between the cathode region and the gate well region at this depth and at a lateral position, which has in an orthogonal projection onto a plane parallel to the first main side a distance of 2 μm from the cathode region. The base layer includes a compensated region of the second conductivity type, the compensated region being arranged directly adjacent to the first main side and between the cathode region and the gate well region, wherein the density of first conductivity type impurities relative to the net doping concentration in the compensated region is at least 0.4.

Edge termination structures for power semiconductor devices (or power devices) are disclosed. The purpose of this invention is to reduce the difficulty of deep trench etching and dielectric filling by adopting an inverted trapezoidal trench. In order to save the area of edge termination and get a high blocking voltage on condition that the angle between the sidewall of the trench and horizontal is large, fixed charges are introduced at a particular location in the trench. Due to the Coulomb interaction between the ionized impurity in the drift region and the fixed charges, the depletion region of the terminal PN junction can extend fully, which relieves the concentration of electric field there. Therefore, the edge termination can exhibit a high breakdown voltage near to that of the parallel plane junction with a smaller area and the reduced technical difficulty of deep trench etching and dielectric filling.

A switching device for switching a high operating voltage is described. The switching device-includes a first switching arrangement with a first self-conducting switching element), which has a control connector and a first and second main connector for forming a switching section. The switching device may include a second switching arrangement having a first and a second connector for forming a switching section, which is wired serially in respect to the switching section of the first switching arrangement. The second switching arrangement includes an optically triggerable switching element for switching the switching section of the second switching arrangement so it becomes conductive. The second connector of the second switching arrangement is connected with the control connector of the first self-conducting switching element.

With an SiC semiconductor device, the surface of a termination region is covered with a passivation film, and the passivation film is provided with a thermal silicon oxide film which is in contact with the surface of the termination region, a CVD silicon oxide film deposited on the thermal silicon oxide film so as to be in contact with the thermal silicon oxide film, and a CVD silicon oxide film deposed on the CVD silicon oxide film so as to be in contact with the CVD silicon oxide film. By so doing, an electric field applied on the passivation film is relaxed, while production cost is reduced.

The present invention provides a silicon carbide Schottky diode comprising anode metal, a p-type epitaxial layer, an n-type drift layer, an n+ substrate, and cathode metal which are disposed successively from top to bottom, wherein the p-type epitaxial layer is provided a plurality of trenches passing through the p-type epitaxial layer; and a side of the anode metal is provided with a plurality ofprotrusions matching the trenches. The present invention also provides a preparation method of the silicon carbide Schottky diode. The anode contact area of the Schottky diode is increased and the on-resistance of a device is reduced by using the trench structure on the basis of ensuring the blocking voltage.