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17results about How to "Increase working voltage" patented technology

Method for reducing contact resistance of high-al component n-algan material and application

ActiveCN114792746BReduce contact resistivityIncrease the carrier concentrationManufacturing technologyOhmic contact
This invention relates to the field of semiconductor optoelectronic device technology, specifically to a method and application for reducing the contact resistance of high-Al-content n-AlGaN materials in device manufacturing processes. The method involves surface atom adsorption and annealing of the n-AlGaN layer under a protective gas atmosphere; the atoms are Si and N atoms. This method significantly increases the carrier concentration on the material surface, thereby contributing to excellent ohmic contact performance and reducing the material's contact resistivity. It solves the problem of difficult ohmic contact preparation for high-Al-content n-AlGaN materials, especially the difficulty in forming ohmic contacts after etching. The method is simple and reproducible, effectively avoiding the complexity and instability of existing processes such as acid / alkali corrosion or high-temperature annealing. It ensures large-scale mass production and has no adverse effects on subsequent device fabrication, exhibiting good process compatibility.
Owner:PEKING UNIV

A mine-used four-way explosion-proof and intrinsic safety type direct-current power supply with communication function

ActiveCN117220527Bimprove securityImprove power conversion efficiency
The application discloses a mine-used four-way explosion-proof and intrinsic safety type direct-current power supply with a communication function, which comprises five non-intrinsically safe AC_DC modules and DC intrinsic safety circuits connected with the non-intrinsically safe AC_DC modules, and is recorded as non-intrinsically safe AC_DC module 0-non-intrinsically safe AC_DC module 4. The non-intrinsically safe AC_DC module 0 is responsible for power supply of a power management module. Two power supplies of the non-intrinsically safe AC_DC module 1 and the non-intrinsically safe AC_DC module 2 are converged through the power management module to form a double-path power supply A. Two power supplies of the non-intrinsically safe AC_DC module 3 and the non-intrinsically safe AC_DC module 4 are converged through the power management module to form a double-path power supply B. The double-path power supply A is fused with a CAN bus and a vehicle-mounted Ethernet unit into an 8-core composite cable. The double-path power supply B is fused with another CAN bus and the vehicle-mounted Ethernet unit into an 8-core composite cable. The power supply internally adopts a four-way power supply parallel mode, can realize power supply with a larger power, has a higher power conversion efficiency, has a lower heat generation, and improves the safety of the power supply system.
Owner:CHENGDU HANGTIAN PHOTOELECTRIC TECH

Light-emitting element

PendingCN121865773AImprove current distribution uniformityChange basic electrical characteristicsWavelength conversionMaterials science
The invention discloses a light-emitting element, and the element comprises an LED chip which is provided with a first surface, a second surface opposite to the first surface, and a side wall connected with the first surface and the second surface. The wavelength conversion layer is at least arranged on the first surface of the LED chip; the electrode expansion structure is arranged on the second surface of the LED chip; the packaging layer at least surrounds the LED chip, the wavelength conversion layer and the electrode expansion structure; and at least one functional structure module selected from the group consisting of the following structure modules. The method can flexibly adapt to different application scenes.
Owner:HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD

Epitaxial structure, LED chip and manufacturing method thereof

PendingCN121985644AIncrease working voltageImprove light extraction efficiencyReflective layerWaveguide
The invention discloses an epitaxial structure, an LED chip and a manufacturing method thereof, the epitaxial structure comprises N stacked light-emitting units and tunnel junctions located between two adjacent light-emitting units, N is greater than or equal to 2, and N is a positive integer; the light-emitting unit comprises a first type waveguide layer, an active layer and a second type waveguide layer; the tunnel junction comprises a first type material layer and a second type material layer which are stacked; the forbidden bandwidths of the first type doping layer and the second type doping layer of the tunnel junction in the light emitting direction are not changed or are gradually increased; the array substrate further comprises a plurality of first-type reflecting layers; the first type reflection layer is laminated on the surface, facing the first type waveguide layer, of each tunnel junction; or the first type reflection layer is laminated on the surface, deviating from the active layer, of each first type waveguide layer. The epitaxial structure is combined with a plurality of light-emitting units through tunnel junctions to form a multi-junction structure, so that the working voltage is effectively improved. And moreover, the occupied area is small, and the epitaxial area loss is reduced. Through the arrangement of the forbidden band width of the tunnel junction, the top light absorption from the epitaxial structure along the light emitting direction is reduced, and the higher light emitting efficiency is ensured.
Owner:JIANGXI CHANGELIGHT SEMICONDUCTOR SCI-TECH CO LTD

Integrated circuit device, voltage regulating method, power supply system and electronic equipment

PendingCN121966265AIncrease working voltageDoes not affect communication interactionDc-dc conversionElectric variable regulationOvervoltageVoltage regulation
The invention relates to an integrated circuit (IC) device, a voltage regulating method, a power supply system and electronic equipment. A first input end (101) of the IC device (10) is used for being connected with a power supply input end (203) of the host (20), a voltage output end (102) of the IC device (10) is used for being connected with a first voltage feedback end (3015) of a first power module (301) in the first slave (30), and the first power module is used for supplying power to the host. Wherein the IC device is used for obtaining a power supply voltage of a host through a first input end; obtaining a first feedback voltage according to first voltage regulation data configured by the host and the power supply voltage of the host; and outputting the first feedback voltage to the first voltage feedback end through the voltage output end, so that the first power supply module adjusts the output voltage of the first power supply module according to the first feedback voltage. According to the scheme, the output voltage of the power supply module can be changed, so that the power supply voltage of the host is adjusted, and the working voltage of the chip can be optimized according to the design of an actual product.
Owner:HONOR DEVICE CO LTD

High-voltage low-inductance perforation connection assembly and perforation connection structure based on dielectric body insulation

The invention provides a dielectric body insulation-based high-voltage low-inductance perforation connection assembly and a perforation connection structure, which are used for solving the technical problem that the transmission efficiency of voltage pulses is restricted due to the defects of large size, loose structure, high inductance and the like of the existing perforation connection assembly. According to the perforated connection assembly based on dielectric body insulation provided by the invention, a double-shielding structure design of the connection shielding body and the perforated shielding body is adopted, and the outer contour size of the perforated shielding body is smaller than that of the connection shielding body; an insulation space problem along the current horizontal transmission direction of the connection structure is converted into a vertical scale space problem; meanwhile, the portions, corresponding to the connecting structures, of the two angular transmission lines to be connected form a connecting shielding body through the sunken connecting grooves, the size space requirement in the horizontal direction is lowered to the maximum extent, and the connector has the advantages of being simple in structure, high in working voltage and the like.
Owner:NORTHWEST INST OF NUCLEAR TECH

An encoder power switching circuit

ActiveCN224319100USolve the pressure dropIncrease working voltageBatteries circuit arrangementsDc-dc conversionElectrical batteryPower switching
The application discloses an encoder power supply switching circuit, which is characterized by comprising a first switching circuit, a second switching circuit and a power output end, wherein the power output end is used for connecting an encoder load, the first switching circuit is arranged between an encoder power supply and the power output end, the first switching circuit comprises a first diode, the positive electrode of the first diode is connected with the encoder power supply, and the negative electrode of the first diode is connected with the power output end; the second switching circuit is arranged between an encoder battery and the power output end, the second switching circuit comprises a first Pmos tube, the drain electrode of the first Pmos tube is connected with the encoder battery, the source electrode of the first Pmos tube is connected with the power output end, and the gate electrode of the first Pmos tube is connected with the encoder power supply. The application has the advantages that the automatic switching of the power supply of the encoder is realized, the problem of power supply voltage drop is solved, and the power supply switching circuit has a smaller voltage drop.
Owner:NANJING ESTUN AUTOMATION CO LTD +1

A wide-temperature-range ether electrolyte with a custom high-voltage-resistant interface layer in alkali metal batteries, its preparation method and application.

PendingCN122291689AHigh charge and discharge efficiencyImprove cycle performanceElectrolytic agentElectrical battery
This invention relates to a wide-temperature-range ether-based electrolyte with a customized high-voltage-resistant interface layer in alkali metal batteries, its preparation method, and its application. The wide-temperature-range ether-based electrolyte comprises a base electrolyte, an anion acceptor additive, and an anion additive containing a specific elemental alkali metal salt. The base electrolyte comprises an alkali metal salt and an ether solvent. In the wide-temperature-range ether-based electrolyte, the concentration of the alkali metal salt is 0.1–1.5 mol·L⁻¹. ‑1 The concentration of the anion acceptor additive is 0.5~5wt%, and the concentration of the alkali metal salt anion additive containing specific elements is 0.1~5wt%. Compared with the prior art, the CEI layer in the wide-temperature-range ether electrolyte of the present invention is more dense and exhibits enhanced chemical and thermal stability, effectively suppressing the positive electrode oxidation reaction and alleviating ion transport limitation, improving the high-temperature, room-temperature, and low-temperature cycle performance of the battery, and increasing the battery's service life.
Owner:SHANGHAI JIAOTONG UNIV

A solid-state electrolyte, a preparation method thereof, a polymer composite solid-state electrolyte, and a solid-state lithium battery

The application discloses a kind of solid electrolyte and preparation method thereof, polymer composite solid electrolyte and solid lithium battery, belong to solid lithium battery technical field, solid electrolyte includes lithium-containing transition metal oxide and doped element doped in lithium-containing transition metal oxide;The chemical formula of the solid electrolyte is Li x M (1‑y) N y O z ;Wherein, M is any one of transition metal, and the transition metal includes any one of Co, Ni or Mn, N is any one or more of doped element, x>0, 0.001≤y≤0.5, z>0.The solid electrolyte provided by the application has high ionic conductivity, controllable electronic conductivity, good interface compatibility, strong environmental stability and low cost, and is suitable for existing solid lithium battery system.
Owner:DKJ NEW ENERGY S & T CO LTD

A module combined power lithium battery module and battery pack

ActiveCN224472604Uincrease profitIncrease working voltageElectrical batteryElectrical connection
The utility model discloses a module combined power lithium cell module and battery pack, including first backboard, second backplate and battery assembly, and battery assembly includes positive terminal piece, negative terminal piece and electric core unit, and electric core unit is located between positive terminal piece and negative terminal piece, and positive terminal piece and negative terminal piece include electrode assembly, and electrode assembly includes electrode plate and pole, and electrode plate includes first connecting part and second connecting part, and first connecting part and second connecting part are bent and connected in right angle, and first connecting part is connected with electric core unit, and pole is connected on second connecting part, and the positive pole of electric core unit is electrically connected with positive terminal piece, and the negative pole of electric core unit is electrically connected with negative terminal piece, and the both sides of positive terminal piece are connected with first backplate and second backplate respectively, and the both sides of negative terminal piece are connected with first backplate and second backplate respectively. Therefore, the utility model is assembled through the pre-modularized component, can reduce the difficulty of assembly on one hand, promotes the efficiency when assembling.
Owner:ANHUI XIANGXIANGYEYE NEW ENERGY TECH CO LTD

A polymetallic ion-substituted V site M x V2O5 materials, their preparation methods, and applications

This invention belongs to the field of electrochemical power source technology, and relates to a multi-metal ion-substituted V site M x V₂O₅ materials, their preparation methods, and applications. The preparation steps are as follows: Citric acid monohydrate, anhydrous oxalic acid, and ammonium metavanadate are sequentially added to deionized water and stirred until completely dissolved to obtain a first solution; citric acid monohydrate and a salt containing metal cation M are added to deionized water and stirred until the salt containing metal cation M is completely dissolved to obtain a second solution; the two solutions are mixed evenly and reacted under a preset temperature to form a gel-like product; the gel-like product is dried to obtain a precursor dry gel; then, after grinding and high-temperature annealing, M is obtained. x V₂O₅ material. The M x When V2O5 is used as a cathode material for lithium-ion secondary batteries, it exhibits excellent reversible capacity and cycle stability, and eliminates the problems of voltage drop and poor cycle stability of traditional V2O5 during discharge.
Owner:TONGJI UNIV

In-situ electro-polymerization of positive electrode for dual-ion battery, battery and preparation method and application thereof

The application discloses a positive electrode of a dual-ion battery, a battery, and a preparation method and application thereof. The dual-ion battery comprises a positive electrode, and the positive electrode comprises a positive electrode material layer, wherein the positive electrode material layer comprises a polymer generated by in-situ electro-polymerization reaction of an active material; and the active material is selected from carbazole and / or carbazole derivatives. In the application, the active material in the positive electrode undergoes in-situ electro-polymerization reaction during charging, and is converted from a small molecule into a polymer, thereby reducing the solubility in an electrolyte, improving the energy storage stability of the positive electrode, and enabling the dual-ion battery containing the positive electrode to have excellent specific capacity and cycle stability. In the application, the positive electrode and the negative electrode of the dual-ion battery store anions and cations, respectively, during operation. The embedding and de-embedding of large-size anions (bisfluorosulfonylimide ions / bistrifluoromethanesulfonylimide ions) enable the battery to have a high working voltage, excellent specific capacity and cycle stability.
Owner:SHENZHEN INST OF ADVANCED TECH

A method for preparing a high-entropy sodium ferrous sulfate / carbon composite cathode material and its application in high-temperature sodium-ion batteries.

This invention discloses a method for preparing a high-entropy sodium ferrous sulfate / carbon composite cathode material and its application in high-temperature sodium-ion batteries, belonging to the technical field of sodium-ion battery cathode materials. The general formula of the sodium ferrous sulfate / carbon composite cathode material is Na. 2.4‑ 2a Fe 1.8‑x+a M 2+ y N 3+ z (SO4)3 / C, where 2x = 2y + 3z, 0 ≤ a ≤ 0.2, 0 < x ≤ 0.2, 0.01 ≤ y ≤ 0.1, 0.01 ≤ z ≤ 0.1; M is selected from at least four of Mg, Ca, Mn, Co, Ni, Cu, Zn, and Ba, and N is selected from Al or Cr. This invention utilizes a high configurational entropy to suppress the dissolution of transition metals, structural collapse, and abnormal grain growth under high-temperature conditions, enabling the material to maintain structural integrity and performance stability during high-temperature cycling, thus possessing broad application prospects.
Owner:ZHENGZHOU UNIV

High-voltage three-phase bridge gate drive circuit

PendingCN121984325Adead time controlconsistent alignmentElectronic switchingPower conversion systemsDriver circuitHemt circuits
A high-voltage three-phase bridge gate drive circuit relates to the technical field of high-voltage integrated circuits and comprises a logic input circuit, a narrow pulse generation circuit, a high-side circuit and a low-side circuit. The logic input circuit is provided with three high-side signal output ends and three low-side signal output ends; the narrow pulse generation circuit comprises three narrow pulse branches; the high-side circuit comprises three high-side branches, and the low-side circuit comprises three low-side branches. The method has the characteristics of good channel consistency, high reliability and the like.
Owner:CHENGDU HUANYUXIN TECH

A driving circuit, a driving system and a driving method

This invention relates to the field of power management circuit technology, and particularly to a driving circuit, driving system, and driving method. The driving circuit includes: multiple cascaded level shifting modules, clamping modules, and driving modules; each clamping module includes multiple clamping sub-modules corresponding to a level shifting module; each clamping sub-module provides a corresponding clamping voltage to each level shifting module; each level shifting module converts the control signal received at its input terminal into a higher-level control signal, thereby converting the first and second control signals into progressively increasing control signals via each level shifting module; the driving module outputs a driving signal to an external power switch based on the control signal output from the last level shifting module. This driving circuit is applicable to power management circuits with higher operating voltages.
Owner:ZHEJIANG HANGXINYUAN INTEGRATED CIRCUIT TECH CO LTD