The invention discloses an epitaxial structure, an LED
chip and a manufacturing method thereof, the epitaxial structure comprises N stacked light-emitting units and tunnel junctions located between two adjacent light-emitting units, N is greater than or equal to 2, and N is a positive integer; the light-emitting unit comprises a first type
waveguide layer, an
active layer and a second type
waveguide layer; the
tunnel junction comprises a first type material layer and a second type material layer which are stacked; the forbidden bandwidths of the first type
doping layer and the second type
doping layer of the
tunnel junction in the light emitting direction are not changed or are gradually increased; the array substrate further comprises a plurality of first-type reflecting
layers; the first type reflection layer is laminated on the surface, facing the first type
waveguide layer, of each
tunnel junction; or the first type reflection layer is laminated on the surface, deviating from the
active layer, of each first type waveguide layer. The epitaxial structure is combined with a plurality of light-emitting units through tunnel junctions to form a multi-junction structure, so that the working
voltage is effectively improved. And moreover, the occupied area is small, and the epitaxial area loss is reduced. Through the arrangement of the forbidden
band width of the tunnel junction, the top light absorption from the epitaxial structure along the light emitting direction is reduced, and the higher light emitting efficiency is ensured.