[Object]When the
CW laser is employed for annealing the
semiconductor film, a device having a high characteristic can be expected. On the other hand, when the beam shaped to be elliptical is scanned on the
semiconductor film, a proportion of
excimer-like
crystal grain region becomes large and this is a problem in point of high integration. The present invention is to make the
excimer-like
crystal grain region formed over the
semiconductor film as small as possible. [Solution]In the present invention, a fundamental wave having a
wavelength of approximately 1 μm is irradiated supplementarily to the semiconductor film, which is the irradiated surface, simultaneously with a
harmonic emitted from a
CW laser. In addition, the fundamental wave is irradiated with a large amount of energy to a region irradiated by the
harmonic with a small amount of energy, and the fundamental wave is irradiated with a small amount of energy to a region irradiated by the
harmonic with a large amount of energy. Thus it becomes possible to form the long
crystal grain region in the semiconductor film while suppressing the formation of the
excimer-like crystal grain region.