[Object]When the 
CW laser is employed for annealing the 
semiconductor film, a device having a high characteristic can be expected. On the other hand, when the beam shaped to be elliptical is scanned on the 
semiconductor film, a proportion of 
excimer-like 
crystal grain region becomes large and this is a problem in point of high integration. The present invention is to make the 
excimer-like 
crystal grain region formed over the 
semiconductor film as small as possible. [Solution]In the present invention, a fundamental wave having a 
wavelength of approximately 1 μm is irradiated supplementarily to the semiconductor film, which is the irradiated surface, simultaneously with a 
harmonic emitted from a 
CW laser. In addition, the fundamental wave is irradiated with a large amount of energy to a region irradiated by the 
harmonic with a small amount of energy, and the fundamental wave is irradiated with a small amount of energy to a region irradiated by the 
harmonic with a large amount of energy. Thus it becomes possible to form the long 
crystal grain region in the semiconductor film while suppressing the formation of the 
excimer-like crystal grain region.