The invention relates to the technical field of SiP power modules, and discloses a SiP
power module integrated by SiCMOSFETs (
silicon carbide metal oxide semiconductor field effect transistors) and diodes on a
single chip for a medium-power and high-power
energy storage power supply. Comprising a
chip, the
chip is composed of a single-
chip integrated SiCMOSFET unit and a
diode, the rear surface of the chip is provided with a module packaging plate, the front surface of the chip is provided with a substrate, the front surface of the substrate is connected with the SiCMOSFET unit and the
diode, the rear surface of the substrate is provided with a first pin wire, the first pin wire is connected with the chip in a
spot welding mode, and the first pin wire is connected with the chip in a
spot welding mode. According to the invention, through the monolithic integration and optimized low-
inductance packaging design of the SiCMOSFET and the
diode and the combination of the advantages of the SiC material, the ultrahigh-frequency working capability, the extremely high conversion efficiency, the excellent thermal performance and the extremely
high power density are realized at the same time, the
system design is greatly simplified, the excellent reliability and the protection capability for
inductive load switching are provided, and the application range is wide. Therefore, the power supply can be applied with high efficiency,
high power density and high reliability, such as a medium-high power
energy storage power supply.