The invention discloses a
semiconductor device and a manufacturing method of the
semiconductor device at a polycrystal opening, the
semiconductor device comprises a substrate, an epitaxial layer of a first
doping type, a plurality of bases of a second
doping type, a well region, a source region, a grid
electrode, a first
doping buried layer, a second doping buried layer and a source
electrode metal layer, a groove is etched in the epitaxial layer, the bases are arranged in the epitaxial layer, and the source
electrode metal layer is arranged in the groove. The side edges of the well region and the source region are connected with the base; the grid electrode is formed by
polycrystalline silicon which is filled in the groove and is provided with a dug hole; the first doped buried layer and the second doped buried layer are formed at the bottom end of the grid electrode, the first doped buried layer and the second doped buried layer are not connected to the base electrode, the first doped buried layer is of a first doping type, the second doped buried layer is of a second doping type different from the first doping type, and the source electrode
metal layer is connected with the base electrode, the source electrode region and the second doped buried layer. The problems caused by the charge storage / accumulation effect can be effectively solved, the device is not easily influenced by the groove, and the design window and the
process window of the device can be larger.