188 results about "Interfacial thermal resistance" patented technology

The invention relates to the technical field of semiconductor devices, in particular to an active phase change heat dissipation control method and system for a silicon carbide power device, and the method specifically comprises the steps: obtaining inherent heat dissipation structure parameters, and synchronously collecting vibration data and transient heat flow data in real time; inputting the inherent heat dissipation structure parameters and the vibration data into a vibration-gap coupling influence evaluation module for evaluation to obtain an interface thermal resistance deterioration risk index; inputting the inherent heat dissipation structure parameters and the transient heat flow data into a heat flow-migration coupling influence evaluation module for evaluation to obtain a distribution uniformity degradation trend index; introducing a phase change stability correction factor, and performing fusion analysis to obtain a comprehensive heat dissipation performance index; and comparing the heat dissipation performance with a preset heat dissipation performance threshold value to generate a corresponding cooperative control instruction set. The problem that in the prior art, prospective, accurate and self-adaptive active heat dissipation cooperative control of the silicon carbide power device cannot be achieved is solved.

The invention discloses a high-heat-conductivity leakproof liquid metal phase change heat-conducting gasket and a preparation method thereof, and relates to the technical field of heat-conducting gaskets. The preparation method comprises the following steps: alloying high-heat-conductivity low-melting-point liquid metal gallium with high-heat-conductivity metal silver and copper, mixing with a polymer containing a specific functional group, adding a modified heat-conducting filler, and carrying out UV curing to form the heat-conducting gasket. Liquid metal is easily alloyed to form eutectic alloy, the melting point can be increased, a chemical cross-linked network formed by the modified heat conduction filler and UV curing can make up heat conduction loss, a heat conduction path is established, the interface thermal resistance is reduced, and the heat conduction efficiency is remarkably improved. The surface oxide layer interacts with the polar group of the polymer, and the steric hindrance effect of the cross-linked network is combined to synergistically realize the leak-proof effect. The high-heat-conductivity leakproof liquid metal phase change heat-conducting gasket prepared by the invention has the effects of high heat conductivity and leakproof.

The invention relates to a low-dielectric-loss high-thermal-conductivity epoxy resin composite material and a preparation method thereof, and the preparation method comprises the following steps: carrying out surface modification treatment on a thermal conductive filler: carrying out surface modification on the thermal conductive filler by adopting a chemical covalent bonding or physical adsorption mode, the heat-conducting filler is used for improving the compatibility of the filler and an epoxy resin matrix and reducing the interface thermal resistance, and comprises boron nitride with a two-dimensional sheet structure; epoxy resin, a curing agent and an optional modifier are evenly mixed, the epoxy resin is selected from epoxy resin with the low polarity characteristic, and the modifier comprises at least one of thermoplastic resin or elastomer. And the process is simple and controllable.

The invention relates to a composite heat dissipation device integrating temperature equalization and liquid cooling, which comprises a liquid cooling plate cover plate, a composite upper cover and a temperature equalization plate lower shell which are sequentially arranged from top to bottom, the top of the temperature equalization plate lower shell is provided with an evaporation chamber, the peripheries of the composite upper cover and the temperature equalization plate lower shell are hermetically connected to form a vacuum cavity, and the bottom surface of the liquid cooling plate cover plate is provided with a recess. The periphery of the liquid cooling plate cover plate and the periphery of the composite upper cover are connected in a sealed mode to form a liquid cooling cavity, and the liquid cooling plate cover plate is provided with a cooling liquid inlet and a cooling liquid outlet. The lower surface of the composite upper cover is punched towards the upper surface to form a plurality of strip-shaped convex hulls; a first capillary structure covers the inner wall of the uniform temperature plate lower shell; and a second capillary structure covers the inner wall of the strip convex hull and / or the lower surface of the composite upper cover. The design is reasonable and ingenious, the functions of the upper cover of the vapor chamber and the fins of the liquid cooling plate are integrated, deep integration of the upper cover and the fins is achieved, the interface thermal resistance is effectively reduced, the structural strength is enhanced, and the manufacturing process is simplified.

The invention discloses a multi-physical-field intelligent optimization system and method for low-thermal-resistance stacked electrode packaging, and relates to the technical field of packaging thermal management. According to the system, a thermal, mechanical and electric multi-physics field coupling model of the stacked electrode packaging structure is established in a unified computational domain through a modeling module; the measurement module collects thermal resistance, thermal conductivity and interface stress data in real time through an integrated sensor; the self-correction optimization module executes a self-adaptive residual iterative algorithm based on the deviation between the model simulation result and the actually measured data, corrects model parameters and generates process control variables; and the process regulation and control module dynamically adjusts the sintering temperature, the coating thickness and the pressing pressure according to the control variables and feeds back updated data to form closed-loop optimization. According to the method, collaborative operation of modeling, measurement, optimization and process regulation and control is realized, dynamic self-correction of multi-physical field parameters and process adaptive optimization can be realized in the packaging operation process, the interface thermal resistance is remarkably reduced, and the heat-conducting property and the structural stability are improved.

The invention belongs to the technical field of metal-based composite material additive manufacturing, and particularly relates to ultrasonic-assisted green laser equipment for copper-based diamond cooling fin machining, which comprises a rack, a printing cabin, a green laser machining system, an ultrasonic-assisted system, a powder spreading system, a gas control system, an intelligent control system and an online monitoring system. By integrating a green laser processing system and an ultrasonic auxiliary system, an ultrasonic-green laser-powder multi-energy field coupling processing system is constructed, the wavelength of green laser is 532 nm, the absorption rate of copper is increased, and compared with traditional infrared laser, low-power and high-efficiency melting of copper can be achieved, the diamond graphitization risk is reduced from the angle of a heat source, and the production cost is reduced. Ultrasonic vibration is transmitted to a molten pool through a substrate coupling type structure, by means of the cavitation effect and the acoustic streaming effect, the interface wettability of copper and diamond is effectively improved, the interface bonding force is enhanced, the interface thermal resistance is reduced, meanwhile, grains are refined, pores are eliminated, residual stress is reduced, and the comprehensive performance of the cooling fin is remarkably improved.

The invention relates to the technical field of interface thermal resistance calculation, and discloses a method for measuring and calculating interface thermal resistance based on an infrared imaging technology, which comprises the following steps: fixing and aligning paired upper and lower test pieces to form a to-be-measured contact interface, respectively preheating to a preset initial temperature difference and stabilizing, and monitoring and recording temperature change and test piece thermophysical parameters; enabling the test piece to be in contact, starting infrared imaging equipment to record full-field transient temperature data in a temperature equalization process, and forming a three-dimensional data matrix; building a thermal resistance correlation model, constructing a heat conduction equation in combination with the parameters to solve a simulated temperature field, and inverting related heat conduction coefficients by using a conjugate gradient method; and calculating microscopic and total contact thermal resistance according to the inversion coefficient and the geometric parameters, and deducing macroscopic thermal resistance. According to the method, non-intrusive transient infrared temperature measurement is combined with a reverse heat transfer algorithm, so that the microscopic thermal resistance, the macroscopic thermal resistance and the total contact thermal resistance are accurately distinguished and quantified.

The invention provides an LNG (Liquefied Natural Gas) conveying flexible pipeline crack initiation and extension prediction method, which comprises the following steps of: constructing a multilayer composite structure geometric model, and defining thermal parameters and mechanical parameters of each layer of material in the model; presetting an initial crack in the model, and establishing a thermal-mechanical coupling control equation containing an interface thermal resistance effect; applying an internal ultralow temperature boundary condition, an external environment temperature boundary condition and a mechanical load boundary condition; solving the thermal-mechanical coupling control equation to obtain temperature field distribution of the section of the pipeline, applying a temperature field as a body load to the multilayer composite structure geometric model, and calculating to obtain a stress field and a stress intensity factor of a crack tip; constructing a crack propagation criterion considering the interface thermal resistance effect; and comparing the stress intensity factor obtained by calculation with a crack propagation criterion, and judging whether the crack is propagated or not. According to the method, the physical authenticity and calculation precision of crack initiation and propagation prediction of the LNG flexible pipeline in the ultralow temperature environment are improved.

The invention discloses an aerosol generating product and an aerosol generating system.The aerosol generating product comprises an aerosol forming base material sheet and a magnetic heating body sheet, and the magnetic heating body sheet and the aerosol forming base material sheet are arranged in a stacked mode in the thickness direction and attached in the stacked area in a surface contact mode; the main heat conduction path directed from the magnetic heating element sheet to the aerosol-forming substrate sheet is a path passing through the thickness direction of the laminated region. Compared with the prior art, the magnetic heating body sheet and the aerosol forming base material sheet are laminated along the thickness direction, and the surface contact is realized in the lamination area, so that the main conduction path of heat from the magnetic heating body sheet to the base material is a short path passing through the lamination thickness direction; therefore, heat conduction distance is shortened, interface thermal resistance is reduced, and heating response speed and energy utilization rate are improved. And meanwhile, the base material is heated more uniformly, so that the aerosol generation efficiency and consistency are improved, and the risk caused by local overheating is reduced.

The invention discloses a high-thermal-conductivity self-adhesion thermal interface material and a preparation method thereof, and is characterized in that polylipoic acid (polyTA) formed by high-temperature ring opening polymerization of lipoic acid (LA) is used as a dynamic reversible polymer matrix, the dynamic reversible polymer matrix has the characteristics of recoverability, self-healing and adhesion due to the inherent dynamic property of disulfide bonds, a spherical thermal conductive filler is modified by a polyphenol compound, and the high-thermal-conductivity self-adhesion thermal interface material is prepared. Polyhydroxy functional groups are given, the surface energy is reduced, meanwhile, certain viscosity is achieved, polyethylene glycol diacrylate is added to serve as a stabilizer, ferric iron salt is evenly stirred and mixed, the reaction time is controlled, and a stable cross-linked network system is constructed. Hydroxyl groups on the surface of the polyphenol-decorated heat-conducting filler and carboxyl groups in polylipoic acid are subjected to esterification reaction, and meanwhile, Fe < 3 + > and the carboxyl groups in the polylipoic acid form supramolecular coordination, so that uniform dispersion and stable bonding of the filler in a matrix are realized, the interface thermal resistance is remarkably reduced, and a continuous heat-conducting passage is formed. The preparation method of the thermal interface material is simple in process, and the thermal interface material has high thermal conductivity and self-adhesion, has soft elasticity and is suitable for various application fields needing efficient thermal conduction and interface thermal management.

The application discloses a method for measuring interface thermal resistance and thermal conductivity of multilayer thin film material, comprising the following steps: arranging a first heating electrode, a second heating electrode and a detecting electrode on the top insulating layer of the multilayer thin film material; changing the frequency of the first alternating current heating current, recording the third harmonic voltage of the first heating electrode, and calculating the alternating current thermal response signal of the first heating electrode and the detecting electrode; changing the frequency of the second alternating current heating current, recording the third harmonic voltage of the second heating electrode, and calculating the alternating current thermal response signal of the second heating electrode and the detecting electrode; fitting the thermal conductivity of the substrate; and fitting the thermal conductivity and the interface thermal resistance of the multilayer thin film material. The substrate thermal conductivity slope method is used for fitting, the slope method is only sensitive to the thermal conductivity of the substrate, and the measurement error caused by the thin film layer is eliminated; the alternating current response signal in the frequency domain is used for the inversion calculation of the thermal conductivity and the interface thermal resistance of the thin film, the data amount is large, and the fitting precision can be improved.

The present application relates to the field of metal matrix composites, and discloses a gradient porous copper-aluminum composite material, a preparation method and application thereof.The gradient porous copper-aluminum composite material comprises an aluminum substrate and a gradient porous copper arranged on one surface of the aluminum substrate; the gradient porous copper is divided into a small-pore copper layer and a large-pore copper layer which are in contact with the aluminum substrate; the transition part of the small-pore copper layer close to the aluminum substrate has a graphene layer deposited on the surface combined with the aluminum substrate and the internal pore surface, and the pores are filled with silver.The present application has the advantages of high thermal conductivity, low interfacial thermal resistance, high strength, lightweight and low cost by designing the gradient pore structure of the porous copper, strengthening the interface with graphene and filling silver glue, and the obtained composite heat dissipation plate material after being combined with the aluminum substrate.

The invention provides an interface thermal resistance testing method and testing device, and belongs to the technical field of semiconductor device testing. The test method comprises the following steps: acquiring an actual cumulative structure function curve of a plurality of contrast samples of the semiconductor device, constructing a thermal structure model of the semiconductor device, and establishing a thermal network model corresponding to the thermal structure model, the thermal network model is used for representing an equivalent thermal structure of a heat flow path of the semiconductor device from a heating junction to an environmental medium; optimizing the parameters of the thermal network model through the actual cumulative structure function of each contrast sample; and obtaining the thermal resistance value of each interface in the semiconductor device according to the optimized thermal network model. The thermal resistance of different interfaces in the semiconductor device can be determined.

The present invention relates to an ionic liquid grafted epoxy resin for electronic industry and an application thereof, the coulombic action energy of the ionic liquid grafted epoxy resin is greater than or equal to 100 KJ / mol, the resin composition comprises the ionic liquid grafted epoxy resin and a filler, the interfacial tension between the ionic liquid grafted epoxy resin and the filler is controlled to be less than or equal to 30mN / m. In the resin composition, the ionic liquid is grafted with the epoxy resin, molecular-level combination of the resin and a filler interface is achieved by controlling interfacial tension, the interface thermal resistance can be remarkably reduced, and an efficient and stable heat conduction path is established. Furthermore, when products such as circuit substrates are prepared, the products can have excellent mechanical property, heat resistance, CAF resistance and heat-conducting property at the same time through the synergistic effect.

The application relates to the fields of material science and electronic heat dissipation technology, and discloses a high-thermal-conductivity low-interface-thermal-resistance heat dissipation powder and a preparation method thereof, which comprises the following steps: S1, mixing a base material and a reinforcing material, and then dissolving the mixture in a dissolving solution to form an initial suspension; S2, adding a functional additive to the initial suspension, and forming a functional initial material with a three-dimensional network structure through a sol-gel method; S3, depositing an interface modifier on the surface of the functional initial material to form a dense interface modification layer, and preparing a composite material; S4, calcining the composite material at high temperature in an inert atmosphere to obtain a heat dissipation material; and S5, cooling, grinding and screening the heat dissipation material to obtain the heat dissipation powder. The high-thermal-conductivity low-interface-thermal-resistance heat dissipation powder and the preparation method thereof have the advantages that through micro-nano double-scale structure design, micron alumina skeletons and nano reinforcing materials are embedded, and interface modification technology and functional additives are synergized, so that the heat dissipation powder has the advantages of high thermal conductivity, low interface thermal resistance, solution of traditional material agglomeration and heat conduction deficiency, and mechanical and thermal conductivity performance.

The invention relates to the technical field of polyimide composite materials, and particularly discloses a covalently-bonded high-thermal-conductivity insulating polyimide composite material and a preparation method thereof. The preparation method comprises the following steps: 1, preparation and surface functionalization of a hybrid filler; 2, preparation of polyamide acid composite slurry: carrying out in-situ polymerization on the hybrid filler, a diamine monomer and a dianhydride monomer in a polar aprotic solvent; and 3, chemical imidization and molding: adding an end-capping reagent into the polyamide acid composite slurry obtained in the step 2, and then carrying out chemical imidization treatment to obtain the high-thermal-conductivity polyimide composite material. According to the composite material disclosed by the invention, the hybrid filler is added, and the hybrid filler is utilized to influence the form and interface thermal resistance of a three-dimensional heat-conducting network, so that the comprehensive performance of the whole composite material is further influenced; the larger the total mass fraction of the hybrid filler in the composite material is, the larger the heat conductivity coefficient, the tensile strength and the volume resistivity of a sample are.

The invention provides a direct liquid cooling power chip structure and a manufacturing method thereof, and belongs to the technical field of semiconductor packaging, and the method comprises the following steps: carrying out the surface pretreatment of a metal layer of a packaging substrate, so as to remove surface oxides and organic pollutants; processing a micro-channel structure in the metal layer; and electrically and thermally interconnecting a bottom bonding pad of the power chip with the surface of the metal layer, and covering the power chip on one side of the micro-channel structure to form a sealing cover plate. According to the method, the micro-channel structure is directly processed and formed in the metal layer of the packaging substrate, and the power chip covers one side of the micro-channel structure to form the sealing cover plate, so that the cooling liquid can flow close to the bottom of the power chip, heat generated by the power chip can be more efficiently led out, and the heat dissipation efficiency of the power chip is improved. A heat dissipation path is obviously shortened, interface thermal resistance is reduced, and heat exchange efficiency is improved; the device is compact in overall structure, the integration level is remarkably improved, and the requirements of high power density and miniaturized packaging are met.

According to the semiconductor substrate material and the preparation method thereof, the DLC layer of 5-110 nm is formed on the semiconductor material layer to serve as a protective layer, the diamond layer is formed on the DLC layer, and the semiconductor material layer can be protected from being etched by hydrogen plasma while low interface thermal resistance is achieved.

This utility model relates to a multifunctional thermally conductive coating. The thermally conductive coating includes, from bottom to top, a base layer for adhesion, a thermally conductive layer forming a thermally conductive network structure, an insulating layer that increases dielectric breakdown voltage, and a heat dissipation layer that accelerates heat dissipation and reduces interfacial thermal resistance. This multifunctional thermally conductive coating, through the adhesion of the base layer, enables effective connection between the coating and thermally conductive pads. Simultaneously, the thermally conductive layer, insulating layer, and heat dissipation layer contribute to high thermal conductivity, thus achieving a balance between thermal conductivity and adhesion, improving the functionality of the thermally conductive coating. Furthermore, the heat dissipation layer can be connected to heat dissipation devices, further enhancing the balance between thermal conductivity and adhesion.

The embodiment of the application provides a reflector and an optical device, which comprises a first electrode, a diamond substrate layer, a first graphene layer, a buffer heat conduction layer, an active region and a second electrode which are sequentially stacked from bottom to top. The diamond substrate layer is provided with a groove, and the first graphene layer extends into the groove to form a heat conduction path of the active region to the diamond substrate layer. The heat conduction path is formed by the diamond substrate layer and the first graphene layer extending into the groove, high-efficiency heat conduction is realized in combination with the buffer heat conduction layer, the lattice mismatch between the diamond and the semiconductor material is relieved by using the graphene, and the advantages of significantly reducing the interface thermal resistance, improving the heat dissipation efficiency of the device and the working stability are achieved.

The application relates to the field and discloses a high-thermal-conductivity hexagonal boron nitride ceramic material and a preparation method thereof; the ceramic material is made of hexagonal boron nitride powder, an aluminum-boron interface precursor, a rare earth oxide additive, a fluoride fluxing agent and inevitable impurities; the hexagonal boron nitride powder comprises first flaky hexagonal boron nitride powder and second flaky hexagonal boron nitride powder, and the two are matched according to particle size gradation. During preparation, the aluminum-boron interface precursor formed by an aluminum source and a boron source is first attached to the surface of the flaky hexagonal boron nitride powder, then mixed with the additive to prepare slurry, the slurry is formed into an oriented blank through doctor blade flow casting, and the oriented blank is pressed into a ceramic blank body in a same direction through layering. Then, the ceramic blank body is subjected to pre-nitriding treatment and oscillation hot-pressing sintering, so that a nitridation bridging phase is formed in the contact area of adjacent flaky hexagonal boron nitride powder. The material can reduce interlamellar porosity and interfacial thermal resistance, improve the thermal conduction continuity between the flaky hexagonal boron nitride powder, and is suitable for insulating and heat-conducting ceramic components.

The present application relates to the technical field of wide band gap semiconductor devices, and particularly relates to a Ga2O3 power device heat dissipation optimization method based on a hetero-substrate structure, which comprises the following steps: combining a first principle to construct an interface atomic model, adopting the first principle to screen a high-thermal-conductivity substrate material, constructing a hetero-interface model to analyze key physical parameters, calculating an interface thermal resistance based on a machine learning potential function and a molecular dynamics method, and combining finite element thermal simulation to carry out macro-scale thermal analysis and structure optimization. The present application covers the whole process from material screening to interface optimization and then to device-level thermal simulation, systematically improves the thermal management performance of the Ga2O3 power device, and simultaneously improves the efficiency and reduces the trial and error cost, thereby providing differentiated strategies for adapting to various complex application scenarios.

This invention discloses a gas sensor based on interface thermal resistance modulation. A heating composite is partially embedded and sandwiched between a first support layer and a second support layer. The second support layer is located between the heating composite and the substrate to reduce stress and heat loss. A second compensation layer, composed of multiple layers, is provided on the substrate side. The density of the interlayer contact interfaces gradually increases towards the substrate, utilizing contact thermal resistance to block heat transfer. This structure significantly reduces energy consumption and eliminates thermal stress while maintaining mechanical strength.

This invention belongs to the technical field of thermally conductive interface materials, specifically relating to a thermally conductive interface material and its preparation method. The preparation method of this thermally conductive interface material includes the following steps: adding pretreated carbon nanotubes and epoxidized Eucommia ulmoides gum to toluene, then adding a catalyst, and heating to react, thereby obtaining modified carbon nanotubes; adding graphene and N-(3-aminopropyl)-1,4-butanediamine to isopropanol, ball milling to obtain pretreated graphene; adding the modified carbon nanotubes and pretreated graphene to epoxy resin, heating and stirring, adding a curing agent to cure and shape, and cooling to room temperature to obtain the final product. The thermally conductive interface material prepared by this invention possesses high thermal conductivity, low interfacial thermal resistance, excellent tensile properties, tear resistance, and aging and temperature resistance, solving the defects of traditional thermally conductive interface materials such as easy aging and rapid mechanical decay, and is suitable for long-term heat dissipation applications in electronic devices.

This invention belongs to the field of thermal conductive materials technology, specifically relating to a thermally conductive composite material, its preparation method, and its application. The thermally conductive composite material provided by this invention includes an organosilicon thermally conductive sheet and an alloy layer stacked sequentially. An alloy with a specific melting point is loaded into the thermally conductive sheet as the bottom layer. In actual use, the alloy layer, serving as the bottom layer, is in close contact with the heat-generating device. When the device heats up, causing the system temperature to rise and reach the alloy's melting point, the alloy melts from a solid to a liquid, rapidly filling the tiny gaps between the thermally conductive pad and the device. This effectively reduces interfacial thermal resistance, improves the heat flux density at the contact surface between the thermally conductive pad and the heat-generating device, and promotes rapid heat transfer. Simultaneously, it significantly improves the thermal conductivity, meeting the high-efficiency heat dissipation requirements of high-performance electronic equipment under extreme operating conditions, effectively ensuring the long-term stable operation of the equipment. This invention achieves a leap in the overall performance of thermally conductive pads, not only exhibiting excellent thermal conductivity but also high reliability and a wide range of applications.

The invention discloses a preparation method of a GaN single crystal film on a high thermal conductivity substrate, and belongs to the field of semiconductor film materials. Two-dimensional boron nitride is introduced as a functional layer, and low-temperature nucleation and high-temperature epitaxy processes are combined, so that high-quality combination of the single-crystal AlN transition layer with metal lattice polarity and the heat dissipation substrate is realized, the interface thermal resistance brought by a traditional bonding technology is effectively reduced, and the overall heat dissipation efficiency is improved; by means of the AlON lattice polarity inversion layer and the regrowth process, controllable conversion from nitrogen lattice polarity to metal lattice polarity is successfully achieved, the component gradual change structure and the dislocation filtering layer design are combined, the dislocation density in the thin film is remarkably reduced, and the crystallization quality of the material is improved. The method has the advantages of low epitaxial structure complexity, low process difficulty and clear and controllable process path, and is suitable for large-scale preparation. The method has important application potential in the high-end technical fields of electric automobiles, efficient energy conversion, advanced display, communication systems and the like.

The invention discloses a semiconductor device. The semiconductor device includes a substrate, a plurality of memory cells, a first protective layer, a second protective layer, and a thermal insulating layer. The memory units are arranged on the substrate in an array mode, the first protection layer and the second protection layer are located on the side walls of the memory units, the first protection layer is located between the memory units and the second protection layer, the first protection layer comprises a first surface deviating from one side of the memory units, and the second protection layer comprises a second surface deviating from one side of the memory units. The material of the second protection layer and the material of the first protection layer both comprise silicon oxide. The thermal insulating layer is located between the adjacent storage units and located on the second surface of the second protective layer. Wherein the defect density at the second surface is greater than that at the first surface, so that the interface thermal resistance between the second protection layer and the thermal insulation layer can be increased, and the heat crosstalk can be reduced.

This invention discloses a heat sink for driving a robot joint module and its manufacturing method. The heat sink includes a heat spreader and a heat sink base. The heat spreader includes a lower cover plate, an upper cover plate, and a capillary wick assembly. The lower cover plate has a flange around its edge, which includes a vertical section and a horizontal section. The upper cover plate covers the lower cover plate and is fixedly connected to the flange, with an evaporation chamber formed between them on the inner side of the flange. The heat sink base is integrally formed by die casting using the heat spreader plate as an insert. The base covers the upper cover plate and the horizontal section of the flange, with the downward-facing side of the lower cover plate exposed outside the base to contact the component to be cooled. This solution eliminates the interfacial thermal resistance between the heat spreader and the base in traditional solutions, resulting in a compact structure and high heat transfer efficiency. The three-dimensional capillary reflux network formed by the multi-layer liquid wick and the groove structure of the lower cover plate effectively separates vapor and liquid and enhances anti-gravity performance, making it suitable for heat dissipation of robot joint modules with compact space and variable postures.

The application discloses an integration method of a lithium niobate-indium phosphide photoelectric integrated device based on a diamond substrate, which directly bonds a polycrystalline diamond substrate with the integrated chip, effectively improves the heat dissipation effect without affecting the original device performance, and solves the heat mismatch problem of lithium niobate, indium phosphide and other materials in the hetero-integration, and the whole preparation process is completed under low-temperature conditions, a heat mismatch balance temporary adhesive layer is introduced, and a low-temperature and long-time annealing treatment is combined, so that the bonding strength is improved, the interface thermal resistance is reduced, and the damage of the thin film material caused by the heat mismatch is reduced or eliminated; the method does not introduce more processes or complex designs except the bonding process, helps to ensure the process consistency, and realizes the transfer of the multi-layer hetero-wafer material and the prepared device layer.

The invention discloses a zinc oxide-multi-walled carbon nanotube mixed nanofluid material as well as preparation and application thereof. The zinc oxide-multi-walled carbon nanotube mixed nanofluid material is prepared through S1, material preparation, S2, pretreatment, S3, preliminary dispersion and S4, ultrasonic treatment. The material can be applied to a high-efficiency heat exchanger, a solar heat collection system or an electronic equipment cooling system. According to the invention, a unique point-line synergistic three-dimensional heat-conducting network is constructed by compounding a multi-walled carbon nanotube with a one-dimensional structure and zinc oxide nanoparticles with a zero-dimensional structure; in the composite system, the zinc oxide nano-particles are used as a thermal bridge to effectively connect the adjacent carbon nano-tubes, so that the heat flow transmission path is obviously increased, and the interface thermal resistance is reduced; meanwhile, the production cost and the energy consumption can be reduced, and a technical guarantee is provided for large-scale application of the nanofluid in the industrial fields such as a solar heat collection system.