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High heat-conducting copper-based composite material and preparation method thereof

A copper-based composite material, high thermal conductivity technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of difficulty in preparing thin-walled complex devices, poor interface bonding, and increasing material thermal resistance. and other problems, to achieve the effect of small thermal expansion coefficient, reduction of thermal stress, and reduction of interface thermal resistance

Inactive Publication Date: 2010-09-15
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, based on the existing electronic packaging material patents, it is found that the addition of carbide-forming elements leads to the introduction of too many interfaces, or poor interface bonding, thereby increasing the thermal resistance of the material
Moreover, it is difficult to prepare thin-walled and complex-structured devices with existing preparation methods.

Method used

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  • High heat-conducting copper-based composite material and preparation method thereof
  • High heat-conducting copper-based composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Raw materials: Cu0.5Zr-plated diamond particles with a particle size of 30 μm, electrolytic copper.

[0035] Diamond magnetron sputtering Cu0.5Zr with a particle size of 30 μm, and a coating thickness of 0.2 μm, the diamond particles after plating and the binder polyvinyl alcohol in a volume ratio of 1:1 were mixed on a mixer for 1 hour at room temperature, and then The preform body is prepared on the injection molding machine. After the preform body is air-dried naturally, it is degreased under Ar atmosphere at 800°C to obtain the preform; then it is put into a graphite mold, and the electrolytic copper block is placed on the preform, and the adhesive is completely The pore volume left after removal is the volume of copper infiltration in the later stage; then put it into a vacuum pressure infiltration furnace, when the vacuum is pumped to 0.1Pa, the temperature rises to 1200°C to infiltrate the metal, the furnace is cooled, and the mold is ejected. The density of the...

Embodiment 2

[0037] Raw materials: CuW-coated diamond particles with a particle size of 28 μm, and oxygen-free copper blocks.

[0038] The diamond magnetron sputtering Cu0.5W of particle diameter 28 μ m, coating thickness 0.3 μ m, the diamond particles after plating and binder polyvinyl alcohol are mixed on the kneader at room temperature for 1 hour by volume ratio (3: 2), and then A preform body is prepared on an injection molding machine. After the prefabricated body is air-dried naturally, it is then thermally degreased and pre-sintered at 800°C under an Ar atmosphere to obtain a prefabricated part, which is then put into a graphite mold, and the oxygen-free copper block is placed in a vacuum pressure infiltration furnace cavity In the intermediate frequency induction furnace, the pore volume left after the adhesive is completely removed is the volume of copper infiltration in the later stage; when the vacuum is pumped to 0.1Pa and the temperature rises to 1200°C, the molten electrolyti...

Embodiment 3

[0040] Raw materials: CuCr-plated diamond particles with a particle size of 40 μm and 25 μm, electrolytic copper.

[0041]Diamond magnetron sputtering Cu0.4Cr with a particle size of 40 μm and 25 μm, the coating thickness is 0.2 μm, and the volume ratio of the two particle sizes of diamonds after plating is 7:3, and the volume of the binder polyvinyl alcohol The ratio was 4:1, and the three were mixed on a kneader at room temperature for 1 hour, and then a preform body was prepared on an injection molding machine. Soak the preform body in gasoline for 24 hours to extract and degrease the binder. After natural air drying, thermal degreasing and pre-sintering are carried out under Ar atmosphere at 900°C to obtain the preform, and then put it into the graphite mold. Put the electrolytic copper block on the prefabricated part, then put it into the vacuum pressure infiltration furnace, when the vacuum is pumped to 0.1Pa, the temperature rises to 1100 ℃, the infiltration metal furna...

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Abstract

The invention relates to a high heat-conducting copper-based composite material and a preparation method thereof, belonging to the technical field of electronic packaging materials. The copper-based composite material consists of 50-80 percent by volume of electroplated diamond particles and 20-50 percent by volume of copper. The electroplated diamond particles and a caking agent are mixed according to the volume ratio of 1:1-4:1 and are produced into a diamond prefabricated part by using an injection forming process of the prefabricated part; and a copper matrix is directly placed on the diamond prefabricated part or is melt and poured on the diamond prefabricated part to be produced into the high heat-conducting copper-based composite material by using a pressure infiltration process. The copper-based composite material has higher heat conductivity ratio than that of an aluminum-based composite material; by plating the surface of diamond, the interface bonding of the matrix copper and the diamond can be improved and the interface heat resistance can be reduced; in addition, the material has low density and small thermal expansion coefficient and meets the requirement for light quality of packaging materials.

Description

technical field [0001] The invention relates to a high thermal conductivity copper-based composite material and a preparation method thereof, in particular to a high thermal conductivity diamond / copper (Diamond / Cu) composite material and a preparation method thereof, belonging to the technical field of electronic packaging materials. Background technique [0002] Nowadays, electronic packaging devices are increasingly miniaturized and dense. Therefore, how to improve the heat dissipation efficiency of electronic packaging materials and increase the thermal matching between devices is a problem in the field of electronic packaging. Copper-based composite materials can use inorganic materials with low density, high thermal conductivity, and low expansion as reinforcements, and compound them with copper with high density, high thermal conductivity, and high expansion. Thermal conductivity, and has the low expansion and low density performance of ceramics. It is used for the bas...

Claims

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Application Information

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IPC IPC(8): C22C29/00C22C9/00C22C30/02C23C14/35B22F3/115B22F3/26
Inventor 张习敏郭宏尹法章张永忠郭明星徐骏石力开
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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