Method for preparing high-heat-conductivity diamond copper-base composite material through super-high-pressure sintering

A copper-based composite material, ultra-high pressure technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of high cost, high brittleness, etc., to improve service life, short preparation time, Process conditions that are easy to achieve

Inactive Publication Date: 2012-07-18
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if it is directly used as a heat sink material, the cost is high, the brittleness is large, and the thermal expansion coefficient is nearly 4 times that of tungsten.

Method used

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  • Method for preparing high-heat-conductivity diamond copper-base composite material through super-high-pressure sintering
  • Method for preparing high-heat-conductivity diamond copper-base composite material through super-high-pressure sintering
  • Method for preparing high-heat-conductivity diamond copper-base composite material through super-high-pressure sintering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1: preparation diamond volume fraction is the diamond / copper composite material of 50%

[0028] In this example, diamonds with a particle size of 109-120 μm were subjected to vacuum micro-evaporation chromium plating at a temperature of 650° C., and the thickness of the chromium plating layer was 0.1 μm to obtain plated diamond particles;

[0029] In this example, 30g of plated diamond particles and 76g of copper powder with an oxygen content of less than 0.1% are put into a V-shaped mixer, mixed for 3.5 hours, and the speed is 40r / min, then 21g is taken out and put into a grinding body. Add alcohol and grind for 0.5 hours, put it into a self-made steel mold, hold the pressure for 1min under the display of 20MPa in a hydraulic press, and press it into a green body. Put the green body into a pyrophyllite mold and put it into a six-sided top press for ultra-high pressure sintering. The process conditions are: the sintering pressure is 5GPa, the power is 2100W, ...

Embodiment 2

[0031] Embodiment 2: preparation diamond volume fraction is the diamond / copper composite material of 55%

[0032] Carry out vacuum micro-evaporation chromium plating at a temperature of 700°C on diamonds with a particle size of 109-120 μm, and the thickness of the chromium plating is 0.1 μm to obtain plated diamond particles;

[0033] The electrolytic copper powder is reduced by hydrogen in a tube furnace, the reduction temperature is 350°C, the reduction holding time is 3.5 hours, and the reduced copper powder with an oxygen content of less than 0.1% is obtained;

[0034] In this example, put 28g of plated diamond particles and 58g of reduced copper powder into a V-shaped mixer, mix for 4 hours at a speed of 35r / min, then take out 21g, put it into a grinding body, and add alcohol to grind After 0.5 hours, put it into a self-made steel mold, hold the pressure for 1min under the hydraulic pressure display of 15MPa, and press it into a green body. Put the green body into a pyro...

Embodiment 3

[0036] Embodiment 3: preparation diamond volume fraction is the diamond / copper composite material of 50%

[0037] Carry out vacuum micro-evaporation chromium plating at a temperature of 750°C on diamonds with a particle size of 109-120 μm. The thickness of the chromium plating is 0.1 μm to obtain plated diamond particles;

[0038] The electrolytic copper powder is reduced by hydrogen in a tube furnace, the reduction temperature is 400°C, the reduction holding time is 3 hours, and the reduced copper powder with an oxygen content of less than 0.1% is obtained;

[0039] In this example, put 24g of plated diamond particles and 61g of reduced copper powder into a V-type mixer, mix for 5 hours at a speed of 30r / min, then take out 21g, put it into a grinding body, and add alcohol for grinding After 0.5 hours, put it into a self-made steel mold, hold the pressure for 1min under the hydraulic pressure display of 15MPa, and press it into a green body. Put the body into a pyrophyllite m...

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Abstract

The invention discloses a method for preparing a high-heat-conductivity diamond copper-base composite material through super-high-pressure sintering and belongs to the field of heat sink materials. The volume percentage of copper powder used as a base body is 30 to 70 percent, and the volume percentage of a wild phase coated diamond is 30 to 70 percent. The process method for preparing the composite material comprises the following steps of: performing micro evaporating on the coated diamond under vacuum to improve the wettability of the coated diamond with the copper powder so as to reduce interface heat resistance; reducing the copper powder; and blending the modified diamond and the copper powder in a certain proportion, cold-pressing and forming, filling into a pyrophyllite mold, and sintering on a hexahedral press at high temperature under high pressure to obtain the diamond copper-base composite material. The diamond / copper-base composite material with high heat conductivity and low expansion coefficient can be used as a plasma part oriented heat sink material in a fusion reactor and can also be applied to other radiating material fields of electronic packaging materials and the like, and has very good development prospect.

Description

technical field [0001] The invention belongs to the research field of heat sink materials, and provides a method for preparing high thermal conductivity diamond-copper-based composite materials through ultra-high pressure sintering. Background technique [0002] With the implementation of the International Thermonuclear Test Reactor program, the research on fusion reactor materials and components has been put on the agenda. Among fusion reactor materials, Plasma Facing Materials (PFM) is the most important type of material. When deuterium and tritium ions are operating, PFM must be able to withstand the impact of high-energy heat flow and neutron irradiation. Tungsten has the advantages of high thermal conductivity, high melting point, high hardness, low sputtering rate, and good hydrogen resistance, so it is selected as PFM. As PFM, tungsten must be combined with heat sink material Connections are made to face the plasma components, transferring heat away quickly. Copper ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/05C22C1/10C22C9/00C23C14/18B22F3/14
Inventor 沈卫平赵晓琳王青云张庆玲王占朋王拉娣李岩周雏蕾李鹏
Owner UNIV OF SCI & TECH BEIJING
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