167 results about "Wide gap" patented technology

An OLED includes a wide gap inert host material doped with two dopants. One of the dopants is an emissive phosphorescent material that can transport either electrons or holes. The other dopant is a charge carrying material that can transport whichever of the electrons and holes that is not transported by the phosphorescent dopant. The materials are selected so that the lowest triplet energy level of the host material and the lowest triplet energy level of the charge carrying dopant material are each at a higher energy level than the lowest triplet state energy level of the phosphorescent dopant material. The device is capable, in particular, of efficiently emitting light in the blue region of the visible spectrum.

The invention relates to gapfill of variable aspect ratio features with a composite PEALD and PECVD method, and specifically provides methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.

Embodiments of the invention are directed to apparatus, methods, and applications involving the actuation of a semi-insulative working fluid by electromechanical forces based on electrowetting-on-dielectric (EWOD) and liquid dielectrophoresis (liquid DEP) mechanisms that are controlled by the frequency, but not the magnitude, of an AC voltage (i.e., ‘frequency-addressable). In the various apparatus embodiments of the invention, a single, frequency-addressable electrode pair includes at least one electrode that has a spatially-varying dielectric coating thickness and thus a spatially-varying electrode gap wherein at least a portion of which a volume of a working fluid can stably reside under no influence of an applied voltage. In an exemplary aspect, a frequency-addressable, bistable apparatus includes at least one wider gap and one narrower gap associated, respectively, with a thicker and a thinner dielectric coating thickness of the electrode(s). The working fluid resides in only one of the at least two gap regions only under the influence of capillary force. A brief burst of AC voltage at a selected high frequency or low frequency will move the liquid from one gap region to another (and back) by one of an EWOD-based and a DEP-based force. In an alternative aspect, an analog apparatus has a continuous, spatially-varying electrode gap in which the dielectric coating thickness on the electrodes varies smoothly in an inverse manner. Various applications to a display device, fiber optic coupler and attenuator, controlled liquid volume dispensers, spotting arrays, well plate apparatus, and others are presented, along with control methods.

The present disclosure relates to photosensitive optoelectronic devices comprising a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer comprising: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA / PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.

An integrated circuit includes a substrate having an etched surface and a non-etched surface. The etched surface contains circuit elements and the non-etched surface contains a bonding surface. The non-etched surface is located at a predetermined height from the etched surface. Bonding this integrated circuit with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

A pole clamp has two legs wherebetween poles of different diameters may be positioned. One of the legs is configured to grip one side surface of the pole. The other leg of the clamp member has a channel through which a threaded shaft is movable along a longitudinal axis toward the one leg. Also formed in the other leg is a bore orthogonally to the channel. A guide that may be in the form of a half nut is movable within the bore, with the threaded surface of the half nut being in a threaded relationship with the threads of the shaft, when the guide is in a first position, so that the shaft is movable along the axis when it is turned. The guide is movable to a second position to disengage its threaded surface from the shaft. When thus disengaged, the shaft is movable bidirectionally along the axis by simple push and pull movements. A second embodiment of the pole clamp utilizes a yoke slider guide having two arms with a narrow gap and a wider gap between the two arms.

A process of making a product which comprises at least two layers in contact with each other, each layer being of a wide-gap material and each layer differing from each other in at least one property, includes the steps of: (i) providing a substrate of a wide-band gap material having a surface and a region adjacent the surface having a particular characteristic, (ii) ion implanting the substrate through the surface to form a damaged layer below that surface, (iii) growing a layer of a wide-band gap material by chemical vapour deposition on at least a portion of the surface of the substrate through which ion implantation occurred, the material of the grown layer having a characteristic different to that of the region of the substrate adjacent the surface through which ion implantation occurred, and (iv) severing the substrate through the damaged layer. The wide-gap material is preferably diamond.

In a flat type image forming apparatus formed by electron emitting devices, the invention is to provide a light emitting substrate, capable of relaxing influence of an abnormal discharge on the electron emitting devices. On a glass substrate 1, a resistor member 4 extending in X- and Y-direction, and a black member 6 extending in X- and Y-directions are formed. Phosphors 5 are positioned in apertures of the black member 6, and are covered by metal backs 7 divided in X- and Y-directions. The metal backs 7 and the resistor member 4 are electrically connected through the black member 6, and the resistance between the metal backs 7 is defined by the resistor member 4 in the Y-direction in which the adjacent metal backs 7 have a wider gap than in the X-direction.

A stable power supply apparatus in accordance with the present invention comprises a secondary battery, a bidirectional chopper circuit and a bidirectional converter, wherein the secondary battery, the chopper circuit and the converter are connected in this order in the direction from the secondary battery side to a system bus line side. The converter is formed of a wide-gap semiconductor device, more particularly, a wide-gap bipolar semiconductor device, and the instantaneous large-power operation capability of the wide-gap bipolar semiconductor device and the instantaneous large-power supplying capability of the secondary battery are utilized. For a short time during which the influence of an instantaneous drop is prevented, the converter is operated as a converter having capability exceeding the instantaneous large-power supplying capability of the secondary battery and having power capacity several times or more the rating of the converter.

A nickel-based high-temperature braze alloy composition includes Cr, Hf, and B. Furthermore, a cobalt-based high-temperature braze alloy composition includes Cr, Hf, and B. The braze alloys can be used, for example, as a single homogenous braze. The braze alloys can also be used, for example, as a component in a wide gap braze mixture where higher or lower melting point superalloy and / or brazing powder is used. The braze alloys may permit joining / repairing of superalloy articles with complex shape and may be used in high temperature applications.

Embodiments of strain-balanced superlattice infrared detector devices and their fabrication are disclosed. In one embodiment, an infrared detector device includes a first contact layer, and absorber superlattice region, a wider gap unipolar barrier region, and a second contact layer. The absorber superlattice region has a period defined by a first InAs layer, strain-balancing structure, a second InAs layer, and an InAsSb layer. The strain-balancing structure comprises an arbitrary alloy layer sequence containing at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. In another embodiment, the absorber superlattice region has a period defined by a first InAs layer, first strain-balancing structure, a second InAs layer, a first GaSb layer, a second strain-balancing structure, and a second GaSb layer. The first strain-balancing structure includes at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. The second strain-balancing structure includes GaInSb and GaSb.

A capacitive dynamic quantity sensor includes a semiconductor substrate, a weight, a movable electrode, and two fixed electrodes. The weight is movably supported by the semiconductor substrate. The movable electrode is integrated with the weight. The fixed electrodes are stationarily supported by the semiconductor substrate. The fixed electrodes face the movable electrode to provide a narrow gap and a wide gap and form a detection part having a capacitance. The weight and the movable electrode are displaced relative to the fixed electrodes in response to a dynamic quantity to be detected such that one of the gaps increases while the other decreases. The dynamic quantity is detected on the basis of the variation in the capacitance. One of wide gap electrode surfaces, which define the wide gap, is smaller than narrow gap electrode surfaces, which define the narrow gap, to improve sensor sensitivity.

Various braze alloy compositions are described, along with methods for using them. In one instance, a boron-free, high-temperature braze alloy includes selected amounts of chromium, hafnium, and nickel. The braze alloy can be used, for example, as a component in a wide gap braze mixture where a higher or lower melting point superalloy and / or brazing powder is used. The braze alloys may permit joining or repairing of superalloy articles with complex shapes, and may be used in high temperature applications. In some other braze alloy embodiments, a nickel- or cobalt-based braze composition can contain selected amounts of boron, but includes restricted amounts of chromium.

A heat sink is provided. The heat sink comprises a hollow chassis having a contact face at a bottom portion thereof for attaching to an electronic component and a heat dissipating face at a top portion thereof. A plurality of circularly arranged fins extend from an inner sidewall of the hollow chassis towards a center of the hollow chassis so that gaps between the fins gradually decrease from the inner sidewall of said hollow chassis towards the center of said hollow chassis. At least a heat pipe is positioned between the contact face and the heat dissipating face. At least a fan is positioned at a side of the hollow chassis for generating air to increase an amount of air blowing through wider gaps between said fins to increase the speed of heat dissipation.

A diffusion bond mixture paint and method for repairing a single-crystal superalloy article that minimizes the amount of braze alloy applied to the article. The amount of boron and eutectic brittle borides of the wide gap brazing processes is minimized, resulting in a more robust repair. The braze paint includes an alloy powder mixture, a binder, and a carrier to thin the paint.

The invention discloses a tumor cell capturing micro-fluidic chip. The tumor cell capturing micro-fluidic chip comprises a base material and a microchannel formed inside the base material, wherein the microchannel extends along a smooth curve, an inlet and an outlet are formed in the two ends of the microchannel respectively, a microcolumn array is arranged in the vertical direction of the interior of the microchannel in a protruding mode, the microcolumn array is distributed in the extending direction of the microchannel, the end, located at the inlet, of the microcolumn array is attached to one side wall of the microchannel, and the end, located at the outlet, of the microcolumn array is attached to the other side wall of the microchannel; capture cavities with triangular cross sections are distributed in the middle of the microcolumn array at equal intervals into an array, and the three vertex angles of each capture cavity form three gaps which are 5 microns wide to be used for capturing one tumor cell 2-3 times. The chip can be used for capturing EpCAM expressed and unexpressed CTCs, EpCAM unexpressed and low-expressed CTCs and CTCs not connected with magnetic beads by means of the microcolumn array with 5 microns wide gaps.

The invention relates to a high-efficiency energy-saving submicron bubble aeration oxygenating device. The high-efficiency energy-saving submicron bubble aeration oxygenating device combines an air suction device, a centrifugal pump, a gas water mixed energy accumulator, a wide-gap submicron bubble spray head and a filtering system, wherein the centrifugal pump can work normally after gas enters the centrifugal pump; the filtering system can perform back wash; the air suction device is arranged on a water inlet of the centrifugal pump and is connected with the filtering system; an air suction pipe communicated with the outside is arranged on the side wall of the air suction device; the sucked gas is forcedly mixed into water under the high-speed rotation action of pump impellers to obtain gas water mixed liquid; the gas water mixed liquid is conveyed into the gas water mixed energy accumulator; the lower part of the gas water mixed energy accumulator is connected with the wide-gap submicron bubble spray head with the gap width of 2 to 3 mm; the wide-gap submicron bubble spray head is arranged at the bottom of sewage requiring aeration to manufacture submicron bubbles; and the submicron bubbles release the gas carried by the bubbles to the sewage to perform aeration and oxygenation, and the concentration of the dissolved oxygen in the sewage is maintained to be 2.5 to 5 mg / L.

In a flat type image forming apparatus formed by electron emitting devices, the invention is to provide a light emitting substrate, capable of relaxing influence of an abnormal discharge on the electron emitting devices. On a glass substrate 1, a resistor member 4 extending in X- and Y-direction, and a black member 6 extending in X- and Y-directions are formed. Phosphors 5 are positioned in apertures of the black member 6, and are covered by metal backs 7 divided in X- and Y-directions. The metal backs 7 and the resistor member 4 are electrically connected through the black member 6, and the resistance between the metal backs 7 is defined by the resistor member 4 in the Y-direction in which the adjacent metal backs 7 have a wider gap than in the X-direction.

A horizontal heterojunction bipolar transistor (HBT) includes doped single crystalline Ge having a doping of the first conductivity type as the base having an energy bandgap of about 0.66 eV, and doped polysilicon having a doping of a second conductivity type as a wide-gap-emitter having an energy bandgap of about 1.12 eV. In one embodiment, doped polysilicon having a doping of the second conductivity type is employed as the collector. In other embodiments, a single crystalline Ge having a doping of the second conductivity type is employed as the collector. In such embodiments, because the base and the collector include the same semiconductor material, i.e., Ge, having the same lattice constant, there is no lattice mismatch issue between the collector and the base. In both embodiments, because the emitter is polycrystalline and the base is single crystalline, there is no lattice mismatch issue between the base and the emitter.

The invention discloses a new concept broadband circularly polarized antenna. The new concept broadband circularly polarized antenna adopts the structure that a feed line is connected with an antenna radiation unit; the antenna radiation unit is etched on a dielectric baseplate; the dielectric baseplate is horizontally fixed above a reflecting plate through a supporting structure; the antenna radiation unit comprises two bending oscillators, two parasitic units, a coplanar microstrip line and a T-shaped microstrip line feed structure; the bending oscillators, the parasitic units and the coplanar microstrip line are etched on the reverse side of the dielectric baseplate; the T-shaped microstrip line feed structure is etched on the obverse side of the dielectric baseplate; the two bending oscillators are centrosymmetric about the dielectric baseplate; the coplanar microstrip line is arranged at a medial axis of the dielectric baseplate; the coplanar microstrip line comprises two wide-gap coplanar microstrip line bodies and two narrow-gap microstrip line bodies; the wide-gap coplanar microstrip line bodies feed the bending oscillators respectively to stimulate circularly polarized waves through the non-center-fed bending oscillators; besides, the broadband circularly polarized antenna adopts a novel and simple full-plane structure, and is convenient to process and form.

In some aspects of the invention, semiconductor unit can produce chips performing uniform parallel operation and a low-thermal-resistance. Aspects of the invention can include a plurality of small semiconductor chips of one and the same kind formed by use of an SiC substrate, which is a wide gap substrate are sandwiched between two conductive plates. In this manner, there can be provided a high-reliability semiconductor unit in which parallel operation of the semiconductor chips is uniformized so that breakdown caused by current concentration can be prevented.

A method for making back-to-front electrical connections in a wafer level chip scale packaging process is disclosed. A wafer containing a plurality of semiconductor chips is mounted on a package substrate. Each semiconductor chip in the plurality includes one or more electrodes on an exposed back side. Scribe lines between two or more adjacent chips on the wafer are removed to form relatively wide gaps. A conductive material is applied to the back side of the semiconductor chips and in the gaps. The conductive material in the gaps between two or more of the chips is then cut through leaving conductive material on the back side and on side walls of the two or more chips. As a result, the conductive material provides an electrical connection from the electrode on the back side of the chip to the front side of the chip.

The present invention provides a HPT having high sensitivity and extensive wavelength band characteristics. The collector and barrier layer (5) is formed on the photo-absorption layer (6), wherein the energy level in the conduction band is higher than that of the photo-absorption layer (6), the energy level in the valence band is almost equal to or higher than that of the photo-absorption layer (6) and is a relatively wider gap semiconductor than the photo-absorption layer. The base layer (4) formed on the collector and barrier layer (5), is a relatively narrow gap as compared with the collector and barrier layer (5), wherein the energy level in the conduction band is equal to or higher than that of the collector and barrier layer (5) in the boundary of the collector and barrier layer (5). The emitter layer (3) formed on a base layer (4) is a relatively wide gap as compared with the base layer (4), and the energy level in the valence band is the first conductivity type semiconductor layer lower than that of the base layer (4).

The invention provides a thermal power plant equipment property evaluation and early warning method and system based on the industrial internet. The method and the system can solve the problem of the wide gap between original operating data of equipment and equipment property management. The method comprises the steps that an equipment data model is generated according to the historical operating data of the equipment, and by correcting the equipment data model in real time according to real-time operating data of the equipment, an equipment dynamic model is generated; the equipment dynamic model is used for analyzing the real-time operating data of the equipment to generate a predicated value, and the predicated value and a site measured value are analyzed and compared to evaluate the equipment property; early warning is carried out for potential faults of the equipment. The system comprises a dynamic model generating unit used for generating the equipment dynamic model, a property evaluation unit used for evaluating the equipment property, and a fault early warning unit used for carrying out early warning for the potential faults of the equipment. The method and the system are suitable for the technical field of communication.

The application describes methods and apparatus for distributed fiber sensing, especially distributed acoustic / strain sensing. The method involves launching interrogating radiation in to an optical fiber and sampling radiation backscattered from within said fiber at a rate so as to acquire a plurality of samples corresponding to each sensing portion of interest. The plurality of samples are divided into separate processing channels and processed to determine a phase value for that channel. A quality metric is then applied to the processed phase data and the data combined to provide an overall phase value for the sensing portion based on the quality metric. The quality metric may be a measure of the degree of similarity of the processed data from the channels. The interrogating radiation may comprise two relatively narrow pulses separated by a relatively wide gap and the sampling rate may be set such that a plurality of substantially independent diversity samples are acquired.

This invention relates to a composition for repairing metallic articles which in its initial state is in the form of an adhesive, self-supporting putty, capable of being molded including 5–15% by weight of a sacrificial binder containing at least one acrylic resin and volatile solvent. The invention also relates to a kit for the composition and methods for repair.

Generally, A system for providing fluid flow through a structural arrangement is described. Specifically, a containment system for a modular gas system is described. In the present invention, air flow enters an encasement entry port. The air travel through a channel to a mounting plane enter surface area. The air flow is directed through the mounting plane and then through the modular gas system. From there, air flow is directed within an encasement towards an exit port. The air then enters a capture system which contains any gas that may have escaped the gas system and vents off purified air. In an alternate embodiment, the channel couples the gas system exit surface area to the exit port. In another alternate embodiment, the channel couples the mounting plane exit surface area to the exit port. In yet another embodiment, the channel couples the entry port to the gas system enter surface area. Additionally, many details that may apply to any of the above embodiments or an embodiment of the present invention are described. These include, a small cross sectional area entrance port to maximize intake air flow, a plugs for openings in the mounting plane that reside beneath wide gaps in the gas system, passages in the channel sidewalls to remove dead spots in the encasement, additional entrance ports to allow the removal of various dead spots within the encasement.

A horizontal heterojunction bipolar transistor (HBT) includes doped single crystalline Ge having a doping of the first conductivity type as the base having an energy bandgap of about 0.66 eV, and doped polysilicon having a doping of a second conductivity type as a wide-gap-emitter having an energy bandgap of about 1.12 eV. In one embodiment, doped polysilicon having a doping of the second conductivity type is employed as the collector. In other embodiments, a single crystalline Ge having a doping of the second conductivity type is employed as the collector. In such embodiments, because the base and the collector include the same semiconductor material, i.e., Ge, having the same lattice constant, there is no lattice mismatch issue between the collector and the base. In both embodiments, because the emitter is polycrystalline and the base is single crystalline, there is no lattice mismatch issue between the base and the emitter.

A condenser for refrigerator includes left and right or upper and lower headers spaced apart from each other for introduction or discharge of refrigerant, a tube unit including tubes mounted between the headers and spaced apart from one another to allow the refrigerant to pass through the tubes, and a fin structure mounted in the respective neighboring tubes to perform heat exchange between the refrigerant passing through the tubes and outside air, the fin structure including fins having a greater width than a width of the tubes. Providing the fins with a greater width than that of the tubes may achieve an expanded heat exchange range and higher heat exchange efficiency. Moreover, wider gaps between the fins ensure smooth air movement, causing a reduced pressure difference of the moving air and neither dust nor debris is trapped between the fins, resulting in higher heat exchange efficiency.