169 results about "Vapour deposition" patented technology

This invention provides a multi-directional air intake silicon carbide coating chemical vapor deposition (CVD) device, belonging to the technical field of CVD equipment. It includes a CVD device body, a gas delivery system, and a control system. The CVD device body has a reaction chamber with gas inlets on its sidewalls, top, and bottom. The gas delivery system has a gas output end, which is connected to the gas inlets on the sidewalls and top of the reaction chamber via pipelines, and is used to introduce gas into the reaction chamber. The control system is connected to the gas delivery system and is used to control the gas flow rate and pressure in the multiple pipelines. By providing gas inlets at the top, bottom, and sidewalls of the reaction chamber and controlling the gas flow rate and pressure in the pipelines, this invention can control the gas flow into the reaction chamber from different directions, achieving multi-directional air intake and ensuring a uniform silicon carbide coating thickness distribution to meet processing requirements.

The application discloses a preparation method of a sodium ion battery hard carbon negative electrode material based on step-by-step synergistic regulation, and comprises the following steps: S1, biomass pretreatment; S2, low-temperature pre-carbonization to obtain biomass pre-carbonized carbon; S3, physical activation: the pre-carbonized carbon is placed in an activation atmosphere to perform medium-temperature activation, and biomass activated carbon is obtained; S4, high-temperature carbonization: the biomass activated carbon is placed in an inert atmosphere to perform high-temperature carbonization, and a hard carbon intermediate is obtained; S5, chemical vapor deposition coating: the hard carbon intermediate is placed in a mixed atmosphere of a coating carbon source and an inert gas to perform chemical vapor deposition coating, and a surface-coated biomass hard carbon negative electrode material is obtained. The application can realize a higher closed pore volume at a milder temperature, and the synergistic regulation pore forming mode of activating and forming pores first and then high-temperature closing pores also avoids the insufficient closed pores caused by single high-temperature treatment.

The application belongs to the technical field of metallurgy, and particularly relates to a device and method for preparing high-purity silicon film based on vacuum degree control electrolytic silicon purification. The device creates a closed environment through a vacuum cabin, and utilizes a connected vacuumizing mechanism and a vacuum degree adjusting device to accurately control the vacuum degree in the cabin. A material storage mechanism is used for storing silicon materials, and is composed of a corundum crucible and a graphite crucible sleeved outside the corundum crucible. A heating mechanism heats the materials through electromagnetic induction. The method first heats impurity-containing electrolytic silicon in a vacuum environment in a deimpurification mode, so that impurities with higher saturated vapor pressure are preferentially volatilized and deposited on the inner wall of the cabin, thereby realizing preliminary purification. Then, in an evaporation mode, the purified silicon material is heated to a volatilization temperature again, so that it is vapor-deposited on the upper base material to directly form a high-purity silicon film. The scheme integrates the purification and film forming processes, and simplifies the process.

The application relates to a preparation method of a diffused island-shaped vanadium dioxide thermochromic film. The preparation method comprises the following steps: a precursor forming step: forming a vanadium oxide film with a thickness of 20-100 nm as a precursor on the surface of a substrate by a magnetron sputtering method, a thermal deposition method or a laser-induced vapor deposition method; a pretreatment step: heating the film to 600-950 DEG C at a temperature increasing rate of more than 80 DEG C / min in an annealing furnace with a pressure of 50 mTorr or less, then keeping the temperature for 5-30 min, and then cooling the film to 300-450 DEG C in the furnace to form the film into a diffused island shape; and an oxidation step: introducing oxygen into the annealing furnace to oxidize the film to obtain a vanadium dioxide film. The film prepared by the preparation method of the vanadium dioxide thermochromic film has good sunlight modulation efficiency and good light transmittance.

A method of controlling stress variation in a layer including silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system. The method includes providing a chamber comprising a platen for supporting a substrate, placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen, introducing a gas comprising oxygen into the chamber, introducing trimethylsilane gas into the chamber, generating a plasma within the chamber, maintaining a temperature at which deposition takes place to less than 275° C., maintaining a pressure within the chamber in the range 1.5-3 Torr, and depositing the layer upon the substrate with a deposition rate >1.5 μm / minute.

Vapor phase methods of depositing a metal or a semimetal—comprising materials on a substrate are provided. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal—comprising material on the substrate. Further provided are materials and structures deposited by the disclosed methods, as well as deposition assemblies.

An apparatus for perovskite fabrication, the apparatus comprising: a chemical vapour deposition (CVD) processing chamber configured to communicate with a first vapour source and a passivation vapour source, wherein the CVD processing chamber is configured to receive: (i) a substrate; (ii) first vapour from the first vapour source; and (iii) passivation vapour from the passivation vapour source; and a heatable substrate holder disposed in the processing chamber, the heatable substrate holder configured to: (i) support the substrate; and (ii) heat the substrate to facilitate perovskite crystal growth on the substrate.

This invention belongs to the field of vapor deposition technology, specifically a plasma-arc chemical vapor deposition (CVD) apparatus and its application. It includes a base plate, a support fixedly mounted on top of the base plate, a reaction chamber mounted on the support, an anode graphite crucible fixedly mounted inside the reaction chamber, an anode metal contained inside the anode graphite crucible, an evaporation chamber inside the reaction chamber, a CVD growth chamber inside the reaction chamber, and a hollow graphite cathode fixedly mounted inside the reaction chamber. This plasma-arc chemical vapor deposition (CVD) apparatus and its application utilize a V-shaped connection between the evaporation chamber and the CVD growth chamber. The catalyst generated by the plasma arc evaporating on the anode metal surface is reflected and rapidly enters the CVD growth chamber, avoiding particle growth and deactivation during transport and preventing the significant negative impact of complex carbon source gas in the subsequent CVD chamber on arc stability, thereby improving catalyst utilization and reaction efficiency.

Silicon dioxide can be deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD). The substrate includes at least one silicon dioxide layer deposited thereon. A plasma enhanced chemical vapour deposition apparatus can be used to deposit silicon dioxide onto a substrate by plasma enhanced chemical vapour deposition.

This application provides a CVD coating conformal fixture for a guide tube, relating to the field of chemical vapor deposition coating technology. The fixture includes a base diffuser plate for supporting the guide tube, with a first side panel below the base diffuser plate. An inner wall muffler is installed on the base diffuser plate and inserted into the guide tube. A second side panel is installed on the base diffuser plate outside the guide tube, with an air inlet between the inner wall muffler and the second side panel. An outer wall baffle plate is installed above the second side panel, with clearance holes for accommodating the guide tube. An outer wall step bracket is installed within the clearance holes of the outer wall baffle plate. An outer wall muffler is installed on the outer wall step bracket or the outer wall baffle plate, with a top diffuser plate on top of the outer wall muffler and an air outlet hole. This fixture not only improves coating uniformity but also offers advantages such as convenient loading and unloading and adaptability to guide tubes of different specifications.

The application discloses an antibacterial composite metal coating based on protective area etching and galvanic corrosion and a preparation method and equipment thereof, and the method comprises the following steps: 1) forming a composite coating by vapor depositing a metal transition layer with a standard electrode potential higher than silver, a silver island intermediate layer and electrochemically depositing a silver layer on the surface of a pretreated titanium-based equipment; 2) performing isolation line etching on the outside of the coating area boundary of the equipment surface by laser; 3) preparing a hydrophobic protective coating on the surface of the reserved coating area; 4) filling paraffin in the isolation line groove to form a temporary hole sealing layer; 5) immersing the equipment in an acidic electrolyte to selectively dissolve the coating in the to-be-stripped area in a sectional stripping mode; 6) removing the paraffin in the isolation line groove and performing trimming by laser; and 7) obtaining the coating material after mechanical polishing, cleaning, drying, vacuum packaging and radiation sterilization. The high-strength coating can realize efficient sterilization through the galvanic corrosion effect and prevent coating abrasion during use.

This invention belongs to the field of metal surface treatment technology, specifically relating to a method for preparing a corrosion-resistant and wear-resistant composite film with strong adhesion on a magnesium alloy wheel substrate. It is applicable to the surface protection of lightweight automotive components. The method involves using an AZ91D magnesium alloy wheel, pre-treating it with a weakly alkaline composite electrolyte, and preparing a MAO coating using micro-arc oxidation. The MAO-coated magnesium alloy wheel is then immersed in a composite sol and gelled for 1-2 hours in an environment with 60%-80% humidity to form a semi-solidified transparent gel film. Subsequently, it is dried in an oven at 60-80℃ for 1 hour, and finally heated to 150-400℃ and held for 1.5 hours to complete the curing. Following this, a diamond thin film is deposited using MPCVD vapor deposition. This invention solves the core pain points of magnesium alloys being easily worn and corroded, achieving ultra-hard protection.

The application discloses a laser-assisted chemical vapor deposition system and belongs to the technical field of chemical vapor deposition, which can solve the problems of poor deposition quality, high deposition cost and narrow application range of the existing chemical vapor deposition system. The system comprises a deposition module, a laser module and a temperature monitoring module. The deposition module is used for depositing a thin film on a sample surface by using a chemical vapor deposition method. The laser module is connected with the deposition module and is used for providing an irradiation laser beam to the sample surface. The temperature monitoring module is connected with the deposition module and is used for monitoring the temperature of the sample surface. The control module is connected with the laser module and the temperature monitoring module and is used for controlling the power of the irradiation laser beam according to the temperature of the sample surface. The application is used for chemical vapor deposition.

Proposed is a vapor deposition precursor composition that enables thin film deposition through vapor deposition. Specifically, proposed is a novel composition applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD), in which the novel composition having excellent reactivity, volatility, and thermal stability, a precursor composition containing the novel composition. Additionally, a method of manufacturing a thin film using the precursor composition is proposed.

This invention discloses a method for preparing a SiC-coated graphite substrate transition layer for semiconductors. The method is implemented using a preparation device for this transition layer. The device includes a support base, with a vapor deposition reaction chamber located at the upper center of the support base. An air inlet is located at the upper center of the vapor deposition reaction chamber. A set of first suction pumps is installed on both the lower left and lower right sides of the vapor deposition reaction chamber. By incorporating a storage and exchange mechanism, the heat from the previous step is exchanged for the gas required for preheating in the next step, reducing heat loss and saving energy. Furthermore, by incorporating a first recovery mechanism and a second recovery mechanism, the efficiency of gas separation is improved, making the entire separation process more precise.

The embodiment of the application provides a three-dimensional porous boron nitride sulfur-loaded material, a positive plate and a preparation method thereof. The three-dimensional porous boron nitride sulfur-loaded material comprises: a positive current collector; and a three-dimensional porous boron nitride modified layer which is in-situ grown through a gas deposition process and is coated on the surface of the positive current collector. The technical scheme of the application can effectively solve the technical problems of the shuttle effect caused by the dissolution of polysulfides and the slow oxidation-reduction reaction kinetics in the lithium-sulfur battery in the prior art.

The application belongs to the technical field of two-dimensional material preparation, and discloses a preparation method of two-dimensional tin phosphide material. In view of the problems of complex equipment, high cost and strong interface coupling existing in the preparation of two-dimensional SnP3 by using the existing molecular beam epitaxy method, the SnBi / Si (111) substrate with lamellar eutectic structure is prepared by Van der Waals extrusion, and the substrate has the functions of weak coupling interface and self-supply Sn source; the controllable epitaxial growth of two-dimensional SnP3 is realized under the condition of low-temperature chemical vapor deposition at 100 DEG C to 150 DEG C by taking black phosphorus as a phosphorus source. The application has simple process and mild conditions, and can obtain large-area and high-quality two-dimensional SnP3, and is suitable for the fields of optoelectronic devices and integrated circuits.

This invention discloses a composite material of carbon-supported silicon nanodots derived from a hierarchical porous metal-organic framework (MOF), relating to the field of lithium-ion battery anode materials. The invention includes preparing a hierarchical porous MOF precursor with both micropores and mesopores; converting the precursor into a hierarchical porous carbon framework through controlled heat treatment; confining the growth of silicon nanodots within the mesopores of the carbon framework via vapor deposition; and removing residual metals by acid washing to obtain a purified target composite material. By using a MOF with a hierarchical porous structure as a precursor and combining it with vapor deposition technology, this invention enables the in-situ construction of uniformly dispersed silicon nanodots within the mesopores of the derived carbon framework, while simultaneously maintaining an efficient ion transport network using a microporous system.

Provided is an yttrium oxide film having Vickers hardness of 900 HV or more, in which the half width determined by X-ray diffractometry of the (222) plane of an yttrium oxide crystal is 0.7° or more, the (222) plane is preferentially oriented in a crystal structure of yttrium oxide, and the diffraction intensity of the (222) plane in X-ray diffractometry is twice or more those of other crystal planes. The yttrium oxide film can be formed on the surface of a component for which corrosion resistance, wear resistance, dust generation resistance, etc. are required, and is formed by any one of a PVD method, a CVD method, or an ALD method, particularly by an ion beam assisted vapor deposition method.

A chemical vapor deposition (CVD) apparatus and method are disclosed, comprising inner and outer chambers, an inlet sleeve, a bottom extraction pipe, and a lifting assembly. The inlet sleeve is sealed to the outer chamber and is used to introduce precursors, reactant gases, and plasma, transporting them from top to bottom to the reaction zone. The inner chamber serves as the main reaction zone, with the sample placed on a heating plate, and the lifting assembly enables the inner chamber to be closed and sealed. The bottom of both the inner and outer chambers has concentrically arranged dual exhaust ports, with the inner and outer extraction pipes connected below the ports, forming a coaxial cylindrical exhaust structure for both chambers. This structure enables staged extraction and axial directional extraction between the reaction zone and the extraction zone. This structure achieves efficient local extraction and directional gas transport in the reaction zone without disrupting the flow field, reducing byproduct retention and backflow, and improving the film deposition rate and uniformity. The apparatus can switch between multiple process modes, including CVD and PEALD, by configuring a plasma generator, and features a compact structure, strong process compatibility, and high deposition quality.

This invention discloses a deposition apparatus and a vapor deposition device, relating to the field of semiconductor technology. The deposition apparatus includes a base frame, a deposition chamber, a drive mechanism, a transmission ring, an induction coil, and a detection element. The deposition chamber is disposed within the base frame, the drive mechanism is mounted on the base frame and connected to the transmission ring, the transmission ring is sleeved outside the deposition chamber, the induction coil is connected to the transmission ring, and the detection element is mounted in the deposition chamber and electrically connected to the drive mechanism. The deposition chamber is used to deposit material onto a wafer, the detection element is used to detect the uniformity of the deposited film thickness, and the drive mechanism, when the film thickness is uneven, drives the induction coil to rotate to the corresponding position where the film thickness is thinner via the transmission ring. The induction coil generates an alternating magnetic field to accelerate deposition. The deposition apparatus provided by this invention can compensate for the thickness of thinner areas of the film formed on the wafer surface, improve film uniformity, enhance deposition effect, and ensure product quality.

This invention relates to the field of wastewater treatment technology, and in particular to a bimetallic doped self-supporting electrode, its preparation method, and its application. Constructed via a two-step chemical vapor deposition method, the bimetallic doped self-supporting electrode MN-SnO2 / GF / NF comprises a foamed nickel substrate GF / NF coated with foamed graphite, and a bimetallic doped SnO2 layer MN-SnO2 grown in situ on the foamed nickel substrate GF / NF, wherein M and N are any two of Sb, In, Fe, Co, and Mn. This invention, employing the aforementioned bimetallic doped self-supporting electrode, its preparation method, and its application, possesses advantages such as tight interfacial bonding and fast electron transport, and can efficiently drive sulfate radical-mediated pollutant degradation reactions.

The present invention relates to a chemical vapor deposition apparatus, and more particularly, to a chemical vapor deposition apparatus that can prevent internal components of equipment for depositing a silicon carbide (SiC) film or the like on a substrate from being damaged due to a high process temperature in the equipment.

The application discloses a preparation method of a copper-graphene composite conductor, and comprises the following steps: S1, a graphene layer is formed on the surface of a copper strip by adopting a chemical vapor deposition method to obtain a graphene / copper composite strip; S2, a plurality of graphene / copper composite strips are stacked in a consistent direction of the graphene layer, and a copper strip without the graphene layer is placed on the outermost layer to form a laminated blank; S3, the laminated blank is subjected to multi-pass deformation treatment, the materials in each layer are metallurgically combined through cumulative deformation, and the laminated blank is formed into a rod-shaped blank through multi-directional forging of the laminated blank; S4, the rod-shaped blank is subjected to multi-stage reducing processing to gradually reduce the cross-sectional area, and a composite single wire with a relatively small diameter is obtained; and S5, a plurality of the composite single wires are twisted to obtain the copper-graphene composite conductor. Through the above scheme, the graphene is mechanically engaged with the copper matrix and is combined with the interface, the interface combined strength is strengthened through forging and extrusion, and the problem that the graphene is easy to fall off in the single vapor deposition method is solved.

The application discloses a flexible boron nitride homojunction pn and a preparation method, wherein a sulfur-doped n-type boron nitride film is grown on a sapphire substrate through a low-pressure chemical vapor deposition technology; a magnesium-doped p-type boron nitride film is grown on a copper substrate through a low-pressure chemical vapor deposition technology; the sulfur-doped n-type boron nitride film and the magnesium-doped p-type boron nitride film are transferred to a flexible substrate through a polymethyl methacrylate assisted liquid phase exfoliation technology, and heat treatment is conducted in an argon atmosphere to obtain a flexible boron nitride homojunction pn. The application realizes efficient n-type and p-type doping of the boron nitride film, and prepares a boron nitride-based homojunction pn on the flexible substrate through a large-area film exfoliation and transfer technology. The homojunction structure has high lattice matching degree and low junction formation energy, further develops the preparation and research of van der Waals homojunctions in the field of ultrawide bandgap materials, and has great application prospect in the fields of optoelectronic devices and high-power power electronic devices.

This invention discloses a chemical vapor deposition (CVD) silicate-modified isostatic graphite and its preparation method, belonging to the field of graphite material modification technology. The CVD silicate-modified isostatic graphite includes an isostatic graphite matrix and a CVD silicate layer. The isostatic graphite matrix has a porosity of 12-20%. The CVD silicate layer includes a SiC coating and a SiC filler layer. The SiC coating is tightly adhered to the surface of the isostatic graphite matrix, and the SiC filler layer uniformly fills the internal pores of the isostatic graphite matrix. This invention optimizes the CVD silicate process parameters to achieve uniform and dense SiC deposition on the graphite surface and within its internal pores—forming a continuous SiC coating on the surface and uniformly filling the internal pores. This avoids both excessively rapid deposition clogging of pore channels and insufficient deposition due to excessively rapid diffusion, significantly improving the modification effect.

This invention belongs to the field of carbon nanotube preparation and reaction process optimization technology, specifically involving a rapid surrogate modeling and parameter optimization method for carbon nanotube preparation via fluidized bed chemical vapor deposition. This method utilizes a CFD-PBM model to generate high-fidelity multiphysics field data and transforms the simulation results on unstructured meshes into a graph data structure. A graph neural network surrogate model is then constructed to achieve rapid prediction of the temperature field and carbon nanotube generation concentration field within the fluidized bed reactor. Based on the graph neural network surrogate model, a deep reinforcement learning optimization framework is built to achieve rapid optimization of key processes. This invention can improve the prediction accuracy of the GNN surrogate model for high-gradient regions, boundary transition regions, and key reaction regions; it can reduce the computational cost in the multi-condition search process and improve the rapid prediction efficiency of the carbon nanotube generation process in the fluidized bed reactor.

A method of forming an optical element is provided. The method includes producing silica-based soot particles using chemical vapor deposition, the silica-based soot particles having an average particle size of between about 0.05 μm and about 0.25 μm. The method also includes forming a soot compact from the silica-based soot particles and doping the soot compact with a halogen in a closed system by contacting the silica-based soot compact with a halogen-containing gas in the closed system at a temperature of less than about 1200° C.

To provide a vapor deposition mask device capable of preventing the positional accuracy of a mask open hole to a substrate from being reduced in a deposition process, and provide a method and apparatus for manufacturing the same.SOLUTION: A method for manufacturing a vapor deposition mask device comprises steps of: arranging a frame 41 at a position where an opening overlaps a mask stage surface 61 of a mask stage 60 when viewed in a first direction D1; applying a tension to a mask 50 in a second direction D2 orthogonal to the first direction; and fixing the mask on a first frame surface 41a in the state of applying the tension to the mask. The mask stage surface is positioned on a second side S2 opposite to a first side S1 from the first frame surface, and in the step of applying the tension to the mask, the mask contacts the mask stage surface and the first frame surface.SELECTED DRAWING: Figure 19