873 results about "Vapour deposition" patented technology

The utility model provides an isolation structure and a chemical vapor deposition device, the isolation structure is arranged in a reaction cavity of the vapor deposition device, a heating device is arranged in the reaction cavity, the reaction cavity comprises a first annular cover, a second annular cover and a third annular cover, the first annular cover comprises a first space used for accommodating the heating device, and the second annular cover comprises a second space used for accommodating the heating device; the second annular cover is arranged on the first annular cover in a sleeving manner; the ring width of the second annular cover is larger than that of the first annular cover, so that a cavity is formed between the first annular cover and the second annular cover. The isolation structure blocks a flowing path of reaction gas in the reaction cavity, and corrosion of the reaction gas to the radio frequency induction coil and the bottom wall of the reaction cavity is reduced; and meanwhile, the radiation heat dissipation of the wafer tray on the radio frequency induction coil is isolated, so that the temperature influence of thermal radiation on the radio frequency induction coil is weakened, and the uniformity of thin film deposition is improved.

The invention discloses an atomic layer deposition silicon-carbon composite material, a preparation method and application thereof, a core-shell coating structure composed of an inner core and an outer shell is adopted, the inner core is a multi-element doped silicon-carbon material, and the outer shell is a solid electrolyte composite layer; the mass ratio of the inner core to the shell is (80-95): (5-20); the solid electrolyte is deposited on the surface of the specific silicon carbon material through an atomic vapor deposition method, so that the expansion is reduced, and the cycle performance of the battery is improved.

The invention relates to the technical field of semiconductor material preparation, and provides a TaC composite coating process based on a carbon nanostructure transition layer and a product thereof. The method comprises the following steps: a) pretreating the surface of a base material to form a groove, b) introducing a carbon source gas, carrying out first chemical vapor deposition under the action of a metal salt catalyst to grow carbon nanoparticles, and depositing the base material pretreated in the step a) to obtain a transition layer deposition base material, c) gasifying a tantalum source, mixing the gasified tantalum source with the carbon source gas, a reaction gas and a carrier gas, and carrying out second chemical vapor deposition to obtain the transition layer deposition base material. And second chemical vapor deposition is conducted, the transition layer deposition base material is filled with the fine grain particle layer, then deposition continues to be conducted on the surface of the transition layer deposition base material to form the coarse grain particle layer, and finally the TaC composite coating is obtained. According to the method, the compactness of the coating can be improved, the bonding strength of the coating and the base material is enhanced, the performance of the TaC composite coating is improved, the service life of the TaC composite coating is prolonged, and the reliability of the TaC composite coating is improved.

The invention discloses a preparation method of a sulfide solid electrolyte, and relates to the field of solid-state batteries, the preparation method comprises the following steps: preparing Li2S-coated LiCl core-shell nanoparticles, and carrying out airflow collision grinding on the Li2S-coated LiCl core-shell nanoparticles and P2S5 nanopowder to obtain composite powder; the composite powder is placed in a reaction furnace for heating deposition, then heating crystallization is carried out, and Li6PS5Cl nanoparticles are obtained; the Li6PS5Cl nanoparticles are placed in a ball milling tank to be treated, then annealing treatment is conducted, and the sulfide solid electrolyte is obtained after treatment is completed. Through combination of the core-shell structure precursor and the vapor deposition technology, the core contradiction that nanocrystallization and high ionic conductivity are difficult to consider at the same time in the sulfide solid electrolyte field is effectively solved, and the problems of interface contact defects caused by micron-sized particles and crystal defects caused by mechanical refinement in a traditional process are effectively solved; the problem is solved through construction of Li2S-coated LiCl core-shell nanoparticles and activation treatment of airflow on collision and grinding.

The invention discloses a high-power silicon-carbon composite material as well as a preparation method and application thereof, and the preparation method comprises the following steps: preparing nano-metal particles, depositing amorphous carbon on the surfaces of the nano-metal particles through a vapor deposition method, and then carrying out acid pickling and core removal to obtain porous carbon; the preparation method comprises the following steps: preparing a silicon-carbon composite material, introducing silane gas and metal gas through a silane cracking method, depositing nano silicon and metal in pores of the silicon-carbon composite material, forming amorphous carbon on the surface of the silicon-carbon composite material, adding the amorphous carbon into a lithium sulfonate solution, and carrying out spray drying to obtain the lithium sulfonate-coated metal-doped silicon-carbon composite material. According to the obtained material, the electronic conductivity of the material is improved by doping metal in the inner core, the expansion is reduced by high-capacity porous carbon, and meanwhile, the lithium sulfonate coated on the outer layer has excellent solvation ability, so that the lithium ion transmission rate of the material is improved, and the rate capability is improved.

Substrate processing chamber gas distribution assemblies and methods utilizing of processing substrates using the same are described. The gas distribution assembly includes an edge ring having a plurality of edge ring openings disposed on the outer peripheral portion and an inner pumping liner including a pumping liner wall concentric with the edge ring and an outer pumping liner wall, the inner pumping liner wall and the outer pumping liner wall defining a pumping liner, the inner pumping liner wall having a plurality of inner pumping liner wall openings. Rotation of the edge ring provides in situ flow conductance through the pumping liner.

The subject of the present disclosure provides the production of N-type or P-type or semi-insulating rutile germanium dioxide templates and thin films in order to obtain sun-blind photo detectors from optical systems in the ultraviolet (UV) wavelength, or to obtain UV light emitting diodes, or to produce semiconductor materials required for UV laser diode production, especially for use in the field of power electronics in the defence industry and / or in missile and aircraft tracking systems. The disclosure describes a system and a method for growing r-GeO2 (rutile germanium dioxide) template and thin films using the chemical vapour deposition (CVD) method.

Provided are: a gas barrier film that includes a vapor deposition layer (B) that includes at least one metal element selected from among zinc, magnesium, and calcium and a compound that has a carbonyl group on a plastic film; and a packaging body that includes the gas barrier film. The peak ratio (A1575 / A1687) of the absorption peak height A1687 at a wavenumber of 1687 cm-1 to the absorption peak height A1575 at a wavenumber of 1575 m-1 on an infrared absorption spectrum for the vapor deposition layer (B) is preferably 0.1–5.0.

The present invention provides: a vapor-deposited multilayer film which has high oxygen barrier properties and high water vapor barrier properties, and has sufficient oxygen barrier properties even after a bending treatment; and the like. Provided is a vapor-deposited multilayer film comprising: a multilayer film in which a layer (A), as the outermost layer, a layer (B), and a layer (C) are stacked in this order; and a vapor-deposited inorganic layer (I) stacked on the exposed surface side of the layer (A). The vapor-deposited inorganic layer (I) is a vapor-deposited metal layer that is mainly composed of aluminum, or a vapor-deposited inorganic oxide layer that is mainly composed of alumina or silica. The layer (A) contains, as a main component, an ethylene-vinyl alcohol copolymer (a) that has an ethylene unit content of 36-60 mol%; the layer (B) contains, as a main component, an ethylene-vinyl alcohol copolymer (b) that has an ethylene unit content of 20-35 mol%; and the layer (C) contains a polyethylene or a polypropylene as a main component. The average thickness of the multilayer film is 300 µm or less.

The invention provides a low-cost silicon-carbon negative electrode material and a preparation method thereof, and belongs to the field of lithium ion battery negative electrode materials. The preparation method of the low-cost silicon-carbon negative electrode material provided by the invention comprises the following steps: introducing a gaseous silicon source and a first protective gas into a reactor, and carrying out silicon deposition on the pore wall surface of porous carbon to obtain a silicon-carbon composite material; and introducing a gaseous organic carbon source and a second protective gas into the reactor for carbon deposition to obtain the low-cost silicon-carbon negative electrode material, the staying time of the gaseous organic carbon source in the reactor is 20-95 seconds. The method comprises the following steps: introducing a gaseous silicon source and a first protective gas into a reactor, and carrying out silicon deposition on the surface of the porous carbon to obtain the silicon-modified porous carbon. By controlling the retention time of the organic carbon source in the reactor, the deposition rate of the organic carbon source is effectively improved, and the problems of low carbon deposition rate, poor coating effect and high production cost in the process of preparing the low-cost silicon-carbon negative electrode material by a vapor deposition method are solved.

The invention discloses a wear-resistant hybrid core-shell electric contact material and a preparation method, and relates to the technical field of electric contact materials, the electric contact material is prepared by taking copper as a matrix, adding SiC (at) Cu composite powder, CNT (at) Cu composite powder, Ti3SiC2 powder and a rare earth oxide dopant, and preparing the composite powder, mixing the powder, forming, sintering and the like. The composite powder with the core-shell structure is prepared through chemical plating, magnetron sputtering, chemical vapor deposition and other technologies, the interface wettability of a reinforcing phase and a copper matrix is effectively improved, through the multi-element hybrid reinforcing design, the hardness, abrasion resistance and heat conduction performance of the material are synergistically improved, the thermal expansion coefficient and the friction factor are reduced, and the service life of the material is prolonged. The prepared electric contact material has excellent comprehensive performance, can be widely applied to the fields of electric locomotive pantograph slide plates, electronic packaging and the like, and is stable and controllable in preparation process and suitable for industrial production.

The invention relates to the technical field of vapor deposition coatings, in particular to a high-wear-resistance diamond coating cutting tool and a preparation method thereof. The cutting tool sequentially comprises a base body, a transition layer, a diamond composite coating and an anti-oxidation protection layer from inside to outside, all the layer structures achieve a synergistic effect, and the technical effects of high bonding strength, high abrasion resistance and high-temperature stability are achieved. According to the preparation method, through matrix surface modification, gradient transition layer design and a multi-interface synergistic enhancement system constructed by a micro-nano composite coating structure, and in combination with precise regulation and control of a CVD preparation process, whole-process optimization from interface bonding to coating performance is realized, and the bonding strength, the wear resistance, the high-temperature stability and the preparation process consistency of the coating are remarkably improved.

An automated chemical vapor deposition apparatus capable of achieving atomic precision manufacturing integrates a pressure system, a temperature system, and a flow rate system, thereby achieving fully automated control throughout the chemical vapor deposition process. In terms of pressure control, an empirical valve opening angle is introduced to rapidly approach the target pressure, greatly improving response time. Moreover, a discontinuous-angle control algorithm is designed to achieve higher control precision even encountered in the chemical vapor deposition process. The apparatus is also provided with an in-situ characterization system, which can achieve real-time monitoring of the sample deposition in the chemical vapor deposition process through corresponding devices. Moreover, the present disclosure designs a furnace chamber travel track. After the deposition process is completed, the furnace chamber can be moved to making a heating zone fully exposed to air, thereby maximizing heat dissipation efficiency and improving overall production efficiency.

The invention provides a metal-doped biomass carbon negative electrode material and a preparation method thereof.The preparation method comprises the steps that an acid activating agent is added into biomass powder for soaking, then a pore inducer is added for high-temperature activating treatment, and activated porous carbon is obtained; preparing a mixed metal salt solution, adding the activated porous carbon into the mixed metal salt solution, sequentially stirring and standing, and performing suction filtration and drying to obtain an intermediate; and putting the intermediate into a vapor deposition reaction cavity, heating under the protection of nitrogen, introducing a silicon source gas and a germanium source gas for a deposition reaction, and cooling after the deposition reaction is completed to obtain the metal-doped biomass carbon negative electrode material. According to the process, through collaborative integration of structural design and element functions, the comprehensive electrochemical performance of the metal-doped biomass carbon negative electrode material is remarkably improved, and the problem that a traditional doped material is insufficient in stability and capacity utilization rate is solved.

The invention provides a nitrogen-fluorine double-element doped porous carbon material, a silicon-carbon negative electrode material and a preparation method thereof, and the preparation method of the porous carbon material comprises the following steps: mixing porous carbon with ammonium fluoride and / or ammonium bifluoride, and carrying out vapor deposition coating or liquid phase coating; and calcining the coated porous carbon material in a closed environment in an inert atmosphere to obtain the nitrogen-fluorine double-element doped porous carbon material. According to the invention, by utilizing the characteristics of nano-scale micropores and super-large specific surface of porous carbon and the properties of low melting point and low boiling point of ammonium fluoride and ammonium bifluoride, a uniformly coated ammonium fluoride and ammonium bifluoride coating layer is obtained by adopting a vapor deposition or liquid phase coating method, and then the porous carbon material is obtained by utilizing high-temperature calcination treatment. According to the present invention, the characteristics of high specific surface and nano-scale micropores can be simultaneously retained, and after the silicon-carbon negative electrode material is prepared, the expansion of the silicon-carbon negative electrode material is substantially reduced, the cycle performance of the material is ensured, and the rate capability of the obtained silicon-carbon negative electrode material is improved.

The present invention relates to a chemical vapor deposition apparatus and, more specifically, to a chemical vapor deposition apparatus wherein, when a gas is supplied toward a substrate, the area to which the gas is supplied is delimited, and the flow rate, flow velocity, or concentration of the supplied gas is individually controlled in each area, thereby increasing the rate of growth of a thin film on the substrate, and increasing the thickness uniformity and doping uniformity of the thin film.

The application discloses a physical vapor deposition device, an electrochromic device and a preparation method thereof, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing an electrochromic layer of WO3 on the surface of a first ITO layer, and the oxygen content is any value in the range of 42.5% to 52.5%; sputtering and depositing a pre-set thickness of a tungsten oxide ion conduction layer on the electrochromic layer, and the oxygen content of the corresponding chamber is any value in the range of 35% to 45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; depositing a second ITO layer on the ion storage layer, and obtaining the electrochromic device after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any value in the range of 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any value in the range of 450 DEG C to 500 DEG C. The electrochromic device prepared by the application has the characteristics of high transmittance and low sheet resistance.

This invention provides a multi-directional air intake silicon carbide coating chemical vapor deposition (CVD) device, belonging to the technical field of CVD equipment. It includes a CVD device body, a gas delivery system, and a control system. The CVD device body has a reaction chamber with gas inlets on its sidewalls, top, and bottom. The gas delivery system has a gas output end, which is connected to the gas inlets on the sidewalls and top of the reaction chamber via pipelines, and is used to introduce gas into the reaction chamber. The control system is connected to the gas delivery system and is used to control the gas flow rate and pressure in the multiple pipelines. By providing gas inlets at the top, bottom, and sidewalls of the reaction chamber and controlling the gas flow rate and pressure in the pipelines, this invention can control the gas flow into the reaction chamber from different directions, achieving multi-directional air intake and ensuring a uniform silicon carbide coating thickness distribution to meet processing requirements.

The invention discloses a preparation method of a gas-phase porous silicon carbon negative electrode material. The preparation method comprises the following steps: (1) depositing silane gas and carbon source gas in porous carbon through a fluidized bed / rotary kiln equipment vapor deposition process to form a CVD (Chemical Vapor Deposition) porous silicon carbon material; (2) carrying out low-temperature ozone pretreatment on the obtained CVD silicon carbon material; and (3) carrying out ALD atomic layer deposition on the CVD silicon-carbon material subjected to ozone pretreatment to form a nano-scale metal oxide coating layer on the surface of the material. Wherein the ozone treatment process method and the ALD technology are suitable for optimizing artificial coating layers of various CVD gas-phase silicon carbon materials with various initial surface carbon layers, can realize a batch, uniform and stable modification effect, and have stable and positive effects in the aspects of initial capacity, first effect and volume expansion inhibition of the materials. The method has a remarkable CVD silicon carbon secondary coating effect, is suitable for batch preparation of materials, can achieve a remarkable material electrochemical performance optimization effect, and is simple, convenient and efficient.

In one embodiment, a physical vapor deposition (PVD) target is provided. The PVD target includes a body having a target region and a backing region. The backing region includes a diameter greater than the diameter of the target region. The target region and backing region have the same coefficient of thermal expansion and the same material.

The application provides a bifunctional composite film of multi-guest molecule synchronous gas phase coordination deposition, metal precursors and organic ligands are dissolved in an organic solvent, a porous inorganic substrate is immersed in the organic solvent, and a substrate loaded with a MOF layer is obtained through a hydrothermal reaction; the substrate loaded with the MOF layer, nitrogen-containing organic ligands and an organic metal compound are placed in a closed container, a MOF composite film with metal nanoparticles is obtained through gas phase deposition, and the MOF composite film is calcined at 160-240 DEG C for 1-4 hours to obtain the bifunctional composite film of multi-guest molecule synchronous gas phase coordination deposition; through molecular level design, the catalytic active center is firmly anchored in the separation matrix, and the problem that the active component is prone to loss is solved. The prepared composite film has excellent oil-water separation performance and efficient photo-Fenton catalytic degradation capacity, and provides an innovative material solution for advanced water treatment.

The invention discloses a TaC coating, a preparation method of the TaC coating, a crucible containing the TaC coating and application of the crucible, and belongs to the field of semiconductor coating material preparation. The method comprises the following steps: coating the surface of a carbon matrix with first tantalum-containing slurry, and carrying out solid-phase sintering reaction to obtain a porous preset coating; placing the porous preset coating and tantalum oxide powder in a closed container, gasifying the tantalum oxide powder through vapor deposition, and enabling gaseous tantalum oxide to permeate into the porous structure of the porous preset coating and react with the surface of the carbon matrix exposed in the porous structure to generate a continuous tantalum carbide barrier layer in situ; and finally, coating the surface of the porous preset coating subjected to vapor deposition with the second tantalum-containing slurry, curing, and carrying out densification sintering in a hydrocarbon atmosphere to obtain the tantalum-containing porous coating. The TaC coating obtained through the method is high in bonding force with an interface, uniform in thickness, high in structure morphology density, few in grain boundary pores and suitable for being applied to the high-purity semiconductor crystal growth industry.

The invention discloses a gradient composite reinforced anti-corrosion treatment method for a metal alloy guardrail, and belongs to the technical field of metal material surface treatment. The method comprises the following steps: carrying out ultrasonic cavitation micro-etching and electrochemical gradient activation pretreatment on the surface of a substrate; a metal ceramic composite layer containing a non-oxide ceramic reinforced phase is generated on the surface in situ through a micro-arc oxidation-chemical vapor deposition coupling process, and a component transition layer is formed with the assistance of vacuum gradient diffusion alloying treatment; and finally, coating an intelligent resin coating containing a corrosion inhibitor capsule and a corrosion indicator, and constructing a super-hydrophobic surface. By constructing a multi-layer composite protection system of the gradient diffusion layer / the metal ceramic layer / the intelligent coating / the super-hydrophobic layer, the anti-corrosion performance is remarkably improved, and the obtained guardrail has excellent bonding strength, wear resistance and long-acting anti-corrosion service life, has the intelligent functions of damage self-repairing and corrosion state visualization and is suitable for popularization and application. The method is especially suitable for harsh service environments.

The application discloses a preparation method of a sodium ion battery hard carbon negative electrode material based on step-by-step synergistic regulation, and comprises the following steps: S1, biomass pretreatment; S2, low-temperature pre-carbonization to obtain biomass pre-carbonized carbon; S3, physical activation: the pre-carbonized carbon is placed in an activation atmosphere to perform medium-temperature activation, and biomass activated carbon is obtained; S4, high-temperature carbonization: the biomass activated carbon is placed in an inert atmosphere to perform high-temperature carbonization, and a hard carbon intermediate is obtained; S5, chemical vapor deposition coating: the hard carbon intermediate is placed in a mixed atmosphere of a coating carbon source and an inert gas to perform chemical vapor deposition coating, and a surface-coated biomass hard carbon negative electrode material is obtained. The application can realize a higher closed pore volume at a milder temperature, and the synergistic regulation pore forming mode of activating and forming pores first and then high-temperature closing pores also avoids the insufficient closed pores caused by single high-temperature treatment.

The application belongs to the technical field of metallurgy, and particularly relates to a device and method for preparing high-purity silicon film based on vacuum degree control electrolytic silicon purification. The device creates a closed environment through a vacuum cabin, and utilizes a connected vacuumizing mechanism and a vacuum degree adjusting device to accurately control the vacuum degree in the cabin. A material storage mechanism is used for storing silicon materials, and is composed of a corundum crucible and a graphite crucible sleeved outside the corundum crucible. A heating mechanism heats the materials through electromagnetic induction. The method first heats impurity-containing electrolytic silicon in a vacuum environment in a deimpurification mode, so that impurities with higher saturated vapor pressure are preferentially volatilized and deposited on the inner wall of the cabin, thereby realizing preliminary purification. Then, in an evaporation mode, the purified silicon material is heated to a volatilization temperature again, so that it is vapor-deposited on the upper base material to directly form a high-purity silicon film. The scheme integrates the purification and film forming processes, and simplifies the process.

The application discloses a heating device, a chemical vapor deposition device and a blowing method. The heating device is used for a chemical vapor deposition device and comprises a heater base, a fixed edge ring, a buffer cavity and a gap. The fixed edge ring is sleeved on the heater base. The buffer cavity and the gap are located between the fixed edge ring and the heater base. The gap comprises a horizontal gap and an inclined gap. One end of the horizontal gap is communicated with the buffer cavity, and the other end is communicated with the inclined gap. An opening end of the inclined gap is directed to the edge of a substrate. A plurality of hollow air plugs are arranged in the heater base in a circumferential interval around the edge of the heater base. A through hole is arranged in each air plug and used for air communication with the buffer cavity. The application can improve the blowing uniformity of the edge of the substrate.

The invention discloses vapor deposition equipment, and belongs to the technical field of chemical vapor deposition. The vapor deposition equipment comprises a bottom shell, a rotary table, a first rotating shaft and a second rotating shaft, wherein the rotary table is rotatably arranged on the bottom shell; the first rotating shaft is arranged on the rotary table and used for positioning at least one workpiece to be machined, and the axis of the first rotating shaft coincides with the rotating axis of the rotary table; the second rotating shaft and the first rotating shaft are distributed in a spaced mode, the second rotating shaft is rotatably arranged on the rotating table and used for positioning at least one to-be-machined workpiece, and the rotating axis of the rotating table is parallel to the rotating axis of the second rotating shaft. By means of the rotary table and the first rotary shaft which are coaxially arranged and the second rotary shaft rotating relative to the first rotary shaft, large-scale machining is achieved, meanwhile, deposition uniformity is improved, machining cost is reduced, and the space utilization rate is increased.

The utility model provides an edge ring flatness detection device which is applied to a vapor deposition chamber, the vapor deposition chamber comprises a base and an edge ring located at the edge of the base, a heater is arranged in the base and is used for heating the base, and the edge ring flatness detection device comprises a detection main body and a control device, the contact indication structure surrounds the edge of the detection main body; wherein the projection of the detection main body along the vertical direction coincides with the projection of the base along the vertical direction; the positioning rotating device is positioned on the detection main body and is used for positioning the detection main body to a preset position on one side, deviating from the heater, of the base, and the outer edge of the detection main body is matched with the outer edge of the base at the preset position; and the detection main body is rotated at the preset position. According to the embodiment of the invention, the flatness of the edge ring can be detected, so that the deposition effect of substrate film deposition is improved.

The application relates to a preparation method of a diffused island-shaped vanadium dioxide thermochromic film. The preparation method comprises the following steps: a precursor forming step: forming a vanadium oxide film with a thickness of 20-100 nm as a precursor on the surface of a substrate by a magnetron sputtering method, a thermal deposition method or a laser-induced vapor deposition method; a pretreatment step: heating the film to 600-950 DEG C at a temperature increasing rate of more than 80 DEG C / min in an annealing furnace with a pressure of 50 mTorr or less, then keeping the temperature for 5-30 min, and then cooling the film to 300-450 DEG C in the furnace to form the film into a diffused island shape; and an oxidation step: introducing oxygen into the annealing furnace to oxidize the film to obtain a vanadium dioxide film. The film prepared by the preparation method of the vanadium dioxide thermochromic film has good sunlight modulation efficiency and good light transmittance.

The invention discloses a polycrystalline silicon reduction efficient vapor deposition reaction system and method, and relates to the technical field of polycrystalline silicon preparation, the polycrystalline silicon reduction efficient vapor deposition reaction system comprises a plasma reaction chamber, the inlet end of the plasma reaction chamber is communicated with a mixed gas pipeline, and the plasma reaction chamber is used for receiving SiHCl3 and H2 mixed gas so as to generate plasma-state mixed gas from the SiHCl3 and H2 mixed gas; the plasma accelerator is communicated with the outlet end of the plasma reaction chamber and is used for accelerating the plasma-state mixed gas and maintaining the activity of the plasma-state mixed gas; the reduction furnace is connected with the outlet end of the plasma accelerator, a plurality of silicon rods are arranged in the reduction furnace, and the reduction furnace is used for receiving the plasma-state mixed gas and carrying out vapor deposition reaction; the microwave emission head assembly is mounted on the reduction furnace and is used for providing high-energy electromagnetic waves into the reduction furnace; and the bias voltage source and the heating assembly are connected with the silicon rod. According to the polycrystalline silicon reduction high-efficiency vapor deposition reaction system, the technical problems of low production efficiency and high production energy consumption cost of polycrystalline silicon preparation are solved.