1270 results about "Vapour deposition" patented technology

Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H2. In some embodiments the thin film comprises MoC, Mo2C, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

The present invention provides a vapor deposition device, comprising: a reaction chamber; a gas injection mechanism, located at the top of the reaction chamber; a susceptor, disposed the reaction chamber, a reaction zone being formed above the susceptor; a rotating shaft, connected to the susceptor; a shielding member, positioned in the reaction chamber and surrounding an inner wall of the reaction chamber, the shielding member comprising an isolation wall near the reaction zone, the isolation wall and the gas injection mechanism forming an enclosed spatial region that covers the reaction zone, a radial dimension of the spatial region gradually increasing from top to bottom, and an outer diameter of the lowest end of the shielding member matching an inner diameter of the reaction chamber; purge channels, distributed on the isolation wall, passing through the isolation wall and in communication with the spatial region, so as to allow a purge gas to be introduced into the spatial region. The vapor deposition device provided by the present invention can improve the production efficiency and quality of materials grown by the device, and extend the maintenance cycle of the reaction chamber.

The invention belongs to the field of silicon-carbon negative electrode material manufacturing, and particularly relates to a preparation method of a vapor deposition silicon-carbon material based on supercritical carrier gas. The method comprises the following steps: carrying out vacuum degassing on a porous carbon material in a heating state, then taking supercritical gas as carrier gas, assisting with ultrasonic vibration, introducing silicon-containing gas to carry out silicon deposition, and repeatedly carrying out operation until the required silicon content is reached; and finally, introducing a carbon source gas for carbon coating to obtain the silicon-carbon composite material with the core-shell structure. According to the preparation method, uniform deposition of silicon in a porous carbon skeleton is realized through silane vapor deposition with supercritical fluid as carrier gas under the assistance of ultrasonic vibration, the first coulombic efficiency is improved, stress concentration and volume expansion in the charging and discharging process are reduced, and the cycling stability is improved.

The invention discloses a gas-phase silicon-carbon negative electrode material preparation system and method, and belongs to the technical field of silicon-carbon negative electrode materials. According to the preparation system disclosed by the invention, the solid raw material supply device, the fluidized bed reactor, the vapor deposition rotary furnace, the product post-processing device, the heat recycling device and the gas raw material supply system are arranged, so that the problems of small production scale, high production cost and low production efficiency of vapor deposition equipment in preparation of the vapor silicon-carbon negative electrode material are solved; and after engineering amplification of the technology, vapor deposition uniformity is reduced, a filter is frequently blocked, and high-temperature sealing is difficult to realize.

The invention discloses a preparation method of a proton exchange membrane water electrolysis hydrogen production membrane electrode, and belongs to the technical field of proton exchange membranes, a catalyst carrier is prepared, S101, a polyimide membrane is inversely fixed in a magnetron sputtering vacuum coating chamber, a cavity cover of the magnetron sputtering vacuum coating chamber is closed, vacuumizing is performed, and a substrate is heated; and S102, argon is introduced into a cavity of the magnetron sputtering vacuum coating chamber, coating is started, the power of the bismuth metal target is set to be 0.2-0.5 kW, and the deposition time is 60-1800 s. In the invention, the physical vapor deposition method is utilized to load the catalyst on the surface of the metal oxide carrier with high specific surface area and ordered nanostructure, so that the exposure of active sites of the catalyst is increased, the dosage of the noble metal catalyst is reduced, and the bonding strength between the catalyst and the carrier is enhanced; the catalyst is not easy to separate from the surface of the carrier, and large-scale slurry agglomeration is avoided.

The invention relates to the technical field of semiconductor etching materials, and provides a method for preparing a high-resistivity silicon carbide material and the silicon carbide material. The method comprises the following steps that a substrate is placed in chemical vapor deposition equipment, the chemical vapor deposition equipment is vacuumized, and then inert gas is introduced; silicon carbon source gas and carrier gas are injected into the chemical vapor deposition equipment through a first gas inlet channel, boron source gas is injected into the chemical vapor deposition equipment through a second gas inlet channel, and silicon carbide is deposited on the surface of the substrate through a chemical vapor deposition process; after gradient annealing is carried out, the substrate is removed; wherein in the step 2, the distance between the air inlet of the first air inlet channel and the air inlet of the second air inlet channel is larger than or equal to 20 cm. According to the method, the doping amount of boron in silicon carbide can be obviously improved, so that the resistivity of silicon carbide is improved, and the etching resistance of silicon carbide is improved.

The utility model provides an isolation structure and a chemical vapor deposition device, the isolation structure is arranged in a reaction cavity of the vapor deposition device, a heating device is arranged in the reaction cavity, the reaction cavity comprises a first annular cover, a second annular cover and a third annular cover, the first annular cover comprises a first space used for accommodating the heating device, and the second annular cover comprises a second space used for accommodating the heating device; the second annular cover is arranged on the first annular cover in a sleeving manner; the ring width of the second annular cover is larger than that of the first annular cover, so that a cavity is formed between the first annular cover and the second annular cover. The isolation structure blocks a flowing path of reaction gas in the reaction cavity, and corrosion of the reaction gas to the radio frequency induction coil and the bottom wall of the reaction cavity is reduced; and meanwhile, the radiation heat dissipation of the wafer tray on the radio frequency induction coil is isolated, so that the temperature influence of thermal radiation on the radio frequency induction coil is weakened, and the uniformity of thin film deposition is improved.

The invention discloses a silicon-carbon composite material and a preparation method thereof. The composite material is composed of porous hard carbon, inorganic lithium salt doped with the porous hard carbon and a porous metal frame as a matrix, nano silicon deposited in pores of the matrix, and an amorphous carbon composite material coated on the surface. The preparation method comprises the following steps: uniformly mixing resin, inorganic lithium salt and a porous metal framework, and carrying out hydrothermal reaction, activation and secondary carbonization to obtain a porous carbon complex; and depositing nano silicon and coating the nano silicon with an organic lithium salt through a vapor deposition method to obtain the silicon-carbon composite material. According to the obtained material, expansion is reduced through large-aperture deposited nanometer silicon of the metal frame structure, the defects are reduced through the inorganic lithium salt of the inner core and the organic lithium salt of the outer shell, the ion diffusion rate is increased, and the first efficiency and the rate performance are improved.

The invention relates to the technical field of electrolytic copper foil processing, printed circuit board processing and electrolytic copper foil, in particular to a preparation method of a bi-component stripping layer carrier copper foil and the bi-component stripping layer carrier copper foil. The preparation method provided by the invention comprises the following steps: preparing a carrier copper layer; preparing a first inorganic stripping layer on the smooth surface of the carrier copper layer through an electrochemical / physical vapor deposition method; preparing a second inorganic stripping layer on the surface of the first inorganic stripping layer through a low-temperature chemical vapor deposition method; preparing an ultra-thin copper layer on the surface of the second inorganic stripping layer through a pulse electrochemical deposition method; carrying out roughening treatment on the ultra-thin copper layer; and constructing a non-copper functional layer on the surface of the roughened ultra-thin copper layer, and carrying out silane coupling agent coating treatment to obtain the double-component stripping layer carrier copper foil. The two-component inorganic matter is used as the stripping layer of the carrier copper foil, the heat resistance of the stripping layer of the carrier copper foil is improved, and meanwhile the stability of the separating force between the ultra-thin copper layer and the carrier copper layer is improved.

The invention discloses a BDD electrode material and a preparation method thereof. The preparation method comprises the following core steps: pretreating the surface of a porous titanium substrate; depositing a nanoscale TiN film layer on the surface of the pretreated porous titanium substrate in advance; depositing a layer of single-walled carbon nanotube network on the TiN thin film layer by using an electrophoretic deposition method; growing a highly-doped BDD layer on the single-walled carbon nanotube network by adopting a plasma enhanced chemical vapor deposition technology; repeating the two steps to form a multi-layer SWCNT / BDD composite structure, and controlling the thickness of the multi-layer SWCNT / BDD composite structure to be 1-50 microns; and finally, depositing a low-doped BDD active layer with the thickness of 1-5 microns by adopting a hot filament chemical vapor deposition (HFCVD) technology. According to the pulse laser assisted preparation process provided by the invention, the femtosecond laser pulse is introduced to replace traditional plasma treatment, so that the process flow is simplified, and the efficiency is improved; according to the technology, the process is simplified, the quality of the TiN film is improved through accurate energy input, and a new way is opened up for further improving the performance of the BDD electrode.

A process for forming a vapor-deposited ZIF-8 metal organic framework includes: conducting a gas surface reaction between an ALD-deposited ZnO and 2-methylimidazole to form a vapor-deposited ZIF-8 metal organic framework, wherein the gas surface reaction is conducted at a temperature greater than 140 C, and wherein the gas surface reaction is conducted at a pressure of less than 1000 mTorr. In a particular embodiment, the gas surface reaction is conducted at a temperature of 160 C. A process for preparing a laminate includes: performing ALD of zinc oxide as a base between 1 nm to 10 nm in thickness, exposing 2-methylimidazole vapor phase linker at chemical vapor deposition at a temperature range of greater than 140 C to less than or equal to 180 C in a vacuum condition, and cycling of the ZnO ALD and 2-methylimidazole exposure to deposit a film or fill a gap.

The invention discloses an atomic layer deposition silicon-carbon composite material, a preparation method and application thereof, a core-shell coating structure composed of an inner core and an outer shell is adopted, the inner core is a multi-element doped silicon-carbon material, and the outer shell is a solid electrolyte composite layer; the mass ratio of the inner core to the shell is (80-95): (5-20); the solid electrolyte is deposited on the surface of the specific silicon carbon material through an atomic vapor deposition method, so that the expansion is reduced, and the cycle performance of the battery is improved.

The present invention provides a chemical vapor deposition apparatus. Gas heating and feeding devices are arranged at the top of a process chamber, the gas heating and feeding devices supply hot gas to the position above carrying areas of a carrying device, and the hot gas assists in heating laminar flow ejected from a process gas feeding device, so that the temperature difference between the upper surfaces and the lower surfaces of substrates in the carrying areas is reduced, and the formation of deposits on the ceiling of the process chamber is suppressed. In addition, the hot gas can also suppress diffusion of laminar-flow process gas away from the substrates, thereby concentrating the process gas near the surfaces of the substrates to enhance film formation on the surfaces of the substrates.

The invention provides a deposition method and system for chemical vapor deposition of silicon carbide, and the method comprises the following steps: S1, providing a graphite base material, putting the base material into a reaction module, starting a rotating device, introducing silane gas, controlling the reaction temperature to be 1100-1200 DEG C, and continuously reacting for 5-10 minutes to form silicon carbide grains on the surface of the base material; s2, the temperature of the reaction module is lowered to 400-500 DEG C, annealing treatment is conducted on the base material with the silicon carbide crystal grains formed on the surface, the reaction time is not shorter than 5 min, and the flatness of the silicon carbide crystal grains is improved; and S3, the gas supply module introduces at least three kinds of process gas into the reaction module, the temperature of the reaction module is adjusted to rise to 1300-1500 DEG C, and the silicon carbide film is deposited on the surface of the base material. Through annealing treatment, the flatness of silicon carbide grains is remarkably improved, the deposition efficiency of the silicon carbide thin film is optimized, internal stress generated in the deposition process is effectively reduced, the uniformity and consistency of a deposition layer are ensured through application of the rotating device, and the overall quality of the silicon carbide thin film is further improved.

The invention relates to the technical field of lithium ion batteries, and provides a surface coating modified halide solid electrolyte as well as a preparation method and application thereof. The method comprises the following steps: preparing a halide solid electrolyte, mixing the halide solid electrolyte with a lithium salt, and carrying out ball milling to obtain the surface coated and modified halide solid electrolyte. The coating layer is directly constructed on the surface of the halide solid electrolyte by adopting a mechanochemical ball milling method, traditional high-energy-consumption processes such as vapor deposition and high-temperature sintering are abandoned, and in-situ modification of the surface of the halide electrolyte is realized. After the lithium salt is used for coating, the side reaction between the halide solid-state electrolyte and lithium metal and the growth of lithium dendrites can be effectively reduced, so that the lithium stability of the halide solid-state electrolyte is improved.

The invention discloses a preparation method of a doped and modified silicon-based negative electrode material, and aims to solve the problems of poor cycle performance and the like caused by large volume expansion and poor conductivity of the existing silicon-based negative electrode material. The method comprises the following steps: mixing nano silicon powder with a transition metal and alkaline earth metal composite doping source and a carbon source in a specific ratio, carrying out differential ball milling treatment twice, carrying out a gradient calcination process, and finally carrying out carbon nanotube coating in a fluidized bed by utilizing a chemical vapor deposition method. According to the invention, a conductive-buffer dual-function network is constructed through dual-metal synergistic doping, and a gradient heat treatment process is combined to optimize the crystallinity and pore structure of the material, so that the first coulombic efficiency of the prepared negative electrode material reaches 87% or more, the volume expansion rate is reduced to 150%, and the capacity retention rate exceeds 92% after 100 cycles; and the electrochemical performance and the structural stability of the silicon-based negative electrode material are remarkably improved.

The invention relates to the technical field of semiconductor material preparation, and provides a TaC composite coating process based on a carbon nanostructure transition layer and a product thereof. The method comprises the following steps: a) pretreating the surface of a base material to form a groove, b) introducing a carbon source gas, carrying out first chemical vapor deposition under the action of a metal salt catalyst to grow carbon nanoparticles, and depositing the base material pretreated in the step a) to obtain a transition layer deposition base material, c) gasifying a tantalum source, mixing the gasified tantalum source with the carbon source gas, a reaction gas and a carrier gas, and carrying out second chemical vapor deposition to obtain the transition layer deposition base material. And second chemical vapor deposition is conducted, the transition layer deposition base material is filled with the fine grain particle layer, then deposition continues to be conducted on the surface of the transition layer deposition base material to form the coarse grain particle layer, and finally the TaC composite coating is obtained. According to the method, the compactness of the coating can be improved, the bonding strength of the coating and the base material is enhanced, the performance of the TaC composite coating is improved, the service life of the TaC composite coating is prolonged, and the reliability of the TaC composite coating is improved.

The invention relates to the technical field of silicon-oxygen negative electrode materials, in particular to a low-expansion-rate silicon-oxygen negative electrode material based on a porous carbon carrier and a preparation method thereof.The preparation method comprises the steps that 1, raw oil is pretreated to obtain a low-condensation-degree carbon-rich precursor; 2, sequentially carrying out oxidation crosslinking, molecular cutting, pre-oxidation and activation treatment on the low-condensation-degree carbon-rich precursor to obtain a porous carbon carrier; and step 3, taking the porous carbon carrier as a substrate, and carrying out vapor deposition and pyrolysis treatment to obtain the low-expansion-rate silicon-oxygen negative electrode material. According to the invention, the porous carbon carrier is used as the substrate, and the silicon-oxygen negative electrode material is obtained through vapor deposition and pyrolysis treatment, and has the characteristics of low expansion rate, good cycle stability and the like.

The invention discloses a solid electrolyte-coated silicon-carbon composite material and a preparation method thereof, and is characterized in that a negative electrode material has a core-shell structure, the core is metal-doped porous carbon and nano silicon deposited in pores, and the shell is a solid electrolyte complex. The preparation method comprises the following steps: uniformly mixing an emulsifier, a phenolic compound, an aldehyde compound, a cross-linking agent, a metal salt of the cross-linking agent and a template agent, then adding an oxidizing agent for reaction, and preparing metal-doped porous carbon through heteroatom doping and activation; depositing nano silicon through a vapor deposition method, coating the surface of the nano silicon with a solid electrolyte through a liquid phase method, and carbonizing to obtain the solid electrolyte coated silicon-carbon composite material. The obtained material has the characteristics of excellent fast charging performance, high initial efficiency and the like when applied to lithium ion batteries.

The invention discloses a preparation method of a sulfide solid electrolyte, and relates to the field of solid-state batteries, the preparation method comprises the following steps: preparing Li2S-coated LiCl core-shell nanoparticles, and carrying out airflow collision grinding on the Li2S-coated LiCl core-shell nanoparticles and P2S5 nanopowder to obtain composite powder; the composite powder is placed in a reaction furnace for heating deposition, then heating crystallization is carried out, and Li6PS5Cl nanoparticles are obtained; the Li6PS5Cl nanoparticles are placed in a ball milling tank to be treated, then annealing treatment is conducted, and the sulfide solid electrolyte is obtained after treatment is completed. Through combination of the core-shell structure precursor and the vapor deposition technology, the core contradiction that nanocrystallization and high ionic conductivity are difficult to consider at the same time in the sulfide solid electrolyte field is effectively solved, and the problems of interface contact defects caused by micron-sized particles and crystal defects caused by mechanical refinement in a traditional process are effectively solved; the problem is solved through construction of Li2S-coated LiCl core-shell nanoparticles and activation treatment of airflow on collision and grinding.

The invention relates to the field of scalpel coatings, in particular to a self-repairing wear-resistant coating, a preparation method and a scalpel applying the self-repairing wear-resistant coating. The self-repairing wear-resistant coating comprises a vapor deposition layer and a self-repairing coating layer which are sequentially coated from inside to outside, the self-repairing coating layer is formed by drying and curing self-repairing coating liquid, and the wear-resistant and self-repairing dual functions are achieved through the synergistic effect of the vapor deposition layer and the self-repairing coating layer. The vapor deposition layer serves as a bottom layer and provides basic hardness and wear resistance, and the self-repairing coating layer is formed by curing a coating liquid and comprises poly (N-isopropylacrylamide) microgel, an antibacterial agent and self-repairing particles. The self-repairing particles realize microscopic repairing through chemical bond recombination when the coating is damaged, and the integrity of the coating is maintained. According to the double-layer structure, physical wear resistance and chemical self-repairing are combined, so that the service life of the surgical knife is remarkably prolonged, and the pollution risk in an operation is reduced.

A magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition (PVD). The shield may have a thickness in a range from approximately 0.1 mm to approximately 10 mm to provide sufficient protection from radio frequency and other electromagnetic signals. As a result, copper atoms in the chamber undergo less re-direction from external noise. Additionally, even when hardware failure occurs during PVD (e.g., an electromagnet malfunctions, a wafer stage is not level, and / or a flow optimizer induces too much shift, among other examples), the copper atoms are less susceptible to small re-directions from external noise. As a result, back end of line (BEOL) and / or middle end of line (MEOL) conductive structures are formed in a more uniform manner, which increases conductivity and improves lifetime of an electronic device including the BEOL and / or MEOL conductive structures.

The invention discloses a high-power silicon-carbon composite material as well as a preparation method and application thereof, and the preparation method comprises the following steps: preparing nano-metal particles, depositing amorphous carbon on the surfaces of the nano-metal particles through a vapor deposition method, and then carrying out acid pickling and core removal to obtain porous carbon; the preparation method comprises the following steps: preparing a silicon-carbon composite material, introducing silane gas and metal gas through a silane cracking method, depositing nano silicon and metal in pores of the silicon-carbon composite material, forming amorphous carbon on the surface of the silicon-carbon composite material, adding the amorphous carbon into a lithium sulfonate solution, and carrying out spray drying to obtain the lithium sulfonate-coated metal-doped silicon-carbon composite material. According to the obtained material, the electronic conductivity of the material is improved by doping metal in the inner core, the expansion is reduced by high-capacity porous carbon, and meanwhile, the lithium sulfonate coated on the outer layer has excellent solvation ability, so that the lithium ion transmission rate of the material is improved, and the rate capability is improved.

The present invention relates to a method for manufacturing a part (1) with improved resistance to oxidation and high-temperature corrosion, comprising at least the deposition of a non-cracked crystalline β-Yb2Si2O7 environmental barrier layer (7) on an at least partially ceramic matrix composite material (3), wherein the environmental barrier layer is deposited by chemical vapour deposition from a gas phase comprising a precursor mixture of (a) a compound A of formula SiClxHy, in which x is an integer from 1 to 4 and y is an integer from 0 to 3, with x + y = 4, and (b) elementary ytterbium or ytterbium(III) chloride, and wherein, during deposition, a temperature between 1100°C and 1300°C and a pressure of 150 mbar or less are imposed.

The invention discloses a sealing coating, a preparation method and application. The sealing coating is attached to an alloy matrix and comprises a metal bonding layer and a composite structure ceramic layer which are sequentially deposited on the alloy matrix, and the composite structure ceramic layer comprises a columnar structure and particles filled in gaps of the columnar structure. The components of the columnar structure and the particles filled in the gaps of the columnar structure respectively and independently comprise one or more of YSZ and rare earth zirconate; the porosity of the composite structure ceramic layer is 22%-40%. The sealing coating provided by the invention has relatively high porosity, relatively low surface Rockwell hardness and relatively high friction coefficient, which means that the sealing coating provided by the invention has more excellent wear resistance. According to the preparation method of the sealing coating, the plasma physical vapor deposition technology is adopted for preparation, and the technological process is simple.

The invention discloses a preparation method of a high-wear-resistance tungsten carbide coating for the inner surface of stainless steel, and belongs to the technical field of high-wear-resistance coating materials.The preparation method comprises the steps that a stainless steel sample is put into an electroplating pool to be electroplated, and a middle transition layer is formed on the surface of the stainless steel sample block; and the electroplated stainless steel sample block is subjected to surface cleaning and then placed in a CVD reaction hearth to be subjected to vapor deposition, and a tungsten carbide coating is formed on the surface of the stainless steel sample block. The method solves the problems that the inner surface of the stainless steel cannot be effectively coated, the coating thickness is not uniform, the coating hardness is insufficient and the like through conventional PVD, thermal spraying and other surface treatment processes, preparation of the high-hardness and high-thickness tungsten carbide coating on the inner surface of the stainless steel is achieved, the coating binding force is good, and the coating quality is high. The stainless steel can be widely applied to complex-structure stainless steel parts in the fields of aerospace, power generation equipment, petrochemical engineering and the like.

Substrate processing chamber gas distribution assemblies and methods utilizing of processing substrates using the same are described. The gas distribution assembly includes an edge ring having a plurality of edge ring openings disposed on the outer peripheral portion and an inner pumping liner including a pumping liner wall concentric with the edge ring and an outer pumping liner wall, the inner pumping liner wall and the outer pumping liner wall defining a pumping liner, the inner pumping liner wall having a plurality of inner pumping liner wall openings. Rotation of the edge ring provides in situ flow conductance through the pumping liner.

The subject of the present disclosure provides the production of N-type or P-type or semi-insulating rutile germanium dioxide templates and thin films in order to obtain sun-blind photo detectors from optical systems in the ultraviolet (UV) wavelength, or to obtain UV light emitting diodes, or to produce semiconductor materials required for UV laser diode production, especially for use in the field of power electronics in the defence industry and / or in missile and aircraft tracking systems. The disclosure describes a system and a method for growing r-GeO2 (rutile germanium dioxide) template and thin films using the chemical vapour deposition (CVD) method.