1991 results about "Vapour deposition" patented technology

To provide a laminate, a tube container and a tube container with a cap capable of improving recyclability while maintaining a desired performance.SOLUTION: There is provided a laminate 10 which has a first sealant layer 11 constituting an outer surface 101, a second sealant layer 12 constituting an inner surface 102, a base material layer 13 provided between the first sealant layer 11 and the second sealant layer 12 and a barrier layer 17 provided between the first sealant layer 11 and the base material layer 13 or between the base material layer 13 and the second sealant layer 12. The first sealant layer 11 and the second sealant layer 12 each contain an unstretched polypropylene resin having a density of 0.88 g / cm3 or moe and 0.90 g / cm3 or less. The base material layer 13 is a stretched polypropylene film. The barrier layer 17 is a vapor deposition layer composed of an inorganic oxide.SELECTED DRAWING: Figure 2A

Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H2. In some embodiments the thin film comprises MoC, Mo2C, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.

In a first aspect, the present disclosure relates to a vapor deposition method of coating a carbonaceous substrate with a tantalum carbide coating, where the method includes a coating step. The coating step includes placing the carbonaceous substrate in a reaction chamber and heating the reaction chamber to a temperature between about 1100 DEG C and about 1500 DEG C for a duration of about 1 hour to about 24 hours. The coating step further includes supplying a process gas to the reaction chamber, where the process gas comprises a halide-containing species, and where the process gas comprises less than 4 atomic% carbon and less than 10 vol% H2 within at least 15 minutes after the start of the process. Further, the coating step includes supplying a tantalum-containing substance to the reaction chamber, or placing a tantalum-containing solid into the reaction chamber. Alternatively, the method includes placing a solid comprising a tantalum halide into the reaction chamber.

The invention discloses a thermal / environmental barrier coating with high thermal insulation, thermal shock resistance and CMAS corrosion resistance as well as a preparation method and application of the thermal / environmental barrier coating. The SiCf / SiC composite material is prepared on the surface of a SiCf / SiC substrate by adopting a plasma spraying-physical vapor deposition technology, and comprises a Si-HfO2 bonding layer, a double-middle layer of Yb2Si2O7 and Yb2SiO5 and a (Dy0.2 Ho0.2 Er0.2 Tm0.2 Lu0.2) 2Hf2O7 top layer from bottom to top, the molar ratio of Si to HfO2 is 15: 85, and the double-middle layer is composed of Yb2Si2O7 and Yb2SiO5. The Si-HfO2 bonding layer provided by the invention has excellent high-temperature performance while providing good bonding force; the Yb2Si2O7 intermediate layer relieves the problem of thermal expansion mismatch between the upper coating and the lower substrate, and further expansion of cracks is hindered through plastic deformation; the Yb2SiO5 middle layer is excellent in water and oxygen corrosion resistance; the (Dy0. 2Ho0. 2Er0. 2Tm0. 2Lu0. 2) 2Hf2O7 top layer provides excellent CMAS corrosion resistance and is excellent in heat insulation performance, and the service temperature can be further increased. The coating has relatively high density and uniformity, presents good mechanical combination with a matrix, can bear thermal shock performance at 1500 DEG C and resist CMAS corrosion, and can be used as a protective coating of a hot end part of an aero-engine.

The invention discloses a silicon-carbon composite material which comprises porous carbon, silicon-containing particles are distributed on the surface of the porous carbon and in pore channels, the surfaces of the silicon-containing particles are coated with aluminum silicate layers, and the surface of the porous carbon is coated with a carbon layer. The invention also discloses a preparation method of the silicon-carbon composite material, which comprises the following steps: sequentially carrying out vapor deposition on the porous carbon by using silane, aluminum steam and vapor carbon to obtain the silicon-carbon composite material. The invention also discloses an application of the silicon-carbon composite material in a negative electrode material. When the silicon-carbon composite material is used in the lithium ion battery, the initial coulombic efficiency and the capacity retention rate of the lithium ion battery can be improved, and the expansion rate of a pole piece is reduced.

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

The invention discloses a wafer vapor deposition device and a use method, and the wafer vapor deposition device comprises a wafer box lifting device which is used for lifting a wafer box; the load locking chamber is arranged between the reaction chamber and the wafer box lifting device, and a wafer cache structure is arranged in the load locking chamber; the wafer cache structure is used for storing wafers which are not subjected to film deposition and transferred from the wafer box to the reaction chamber or storing wafers which are subjected to film deposition and transferred from the reaction chamber to the wafer box; the reaction chambers are used for performing thin film deposition on the wafer; and the wafer transfer device is used for transferring wafers among the wafer box, the wafer cache structure and the reaction chamber. The opening and closing frequency of the load locking cavity is obviously reduced, frequent conversion between atmospheric pressure and vacuum pressure is avoided, the production efficiency is improved, and the operation pressure of a vacuum pumping system is effectively relieved.

The present invention provides a vapor deposition device, comprising: a reaction chamber; a gas injection mechanism, located at the top of the reaction chamber; a susceptor, disposed the reaction chamber, a reaction zone being formed above the susceptor; a rotating shaft, connected to the susceptor; a shielding member, positioned in the reaction chamber and surrounding an inner wall of the reaction chamber, the shielding member comprising an isolation wall near the reaction zone, the isolation wall and the gas injection mechanism forming an enclosed spatial region that covers the reaction zone, a radial dimension of the spatial region gradually increasing from top to bottom, and an outer diameter of the lowest end of the shielding member matching an inner diameter of the reaction chamber; purge channels, distributed on the isolation wall, passing through the isolation wall and in communication with the spatial region, so as to allow a purge gas to be introduced into the spatial region. The vapor deposition device provided by the present invention can improve the production efficiency and quality of materials grown by the device, and extend the maintenance cycle of the reaction chamber.

The invention discloses a lithium manganese iron phosphate positive electrode material coated with a carbon layer based on a CVD (chemical vapor deposition) method and a preparation method, the preparation method comprises the following steps: forming a uniform carbon coating layer on a lithium manganese iron phosphate precursor based on a CVD coating process, mixing the lithium manganese iron phosphate precursor with the uniform carbon coating layer and a lithium salt, and carrying out co-sintering, and the lithium salt can permeate through the carbon layer to form a lithium-doped uniform carbon coating layer. According to the method, the coating effect is improved, the problem that uniform coating cannot be formed on the surface of the precursor in a traditional carbon coating process is effectively solved, precipitation of trivalent manganese ions at a high temperature can be slowed down, the problem that the capacity exertion is reduced due to the fact that an amorphous carbon layer formed by a CVD cracking coating process affects lithium ion deintercalation is solved, and the performance of the lithium ion battery is improved. The safety and the service life of the battery are improved.

The invention discloses a deposition system for chemical vapor deposition silicon carbide ring production, and relates to the field of high-end equipment manufacturing. The deposition system for producing the chemical vapor deposition silicon carbide ring comprises a furnace body, wherein a reaction chamber and a heating module are arranged in the furnace body; the plurality of spray head groups are connected with gas pipelines; the graphite support is installed at the inner bottom of the bottom cover, the graphite support is used for supporting the annular single crystal substrate, and the graphite support is detachable; the stabilizing mechanism comprises a lifting seat, the supporting arm is fixed to the lifting seat, and the clamping assembly is installed on the supporting arm; the device comprises a furnace body, a nozzle group, a conveying mechanism and a lifting mechanism, and is characterized in that gas containing silicon and carbon is sprayed into the furnace body through the nozzle group, so that the gas containing silicon and carbon can be quickly and uniformly dispersed into a reaction chamber in the furnace body, and the deposition rate and uniformity of silicon carbide on an annular single crystal substrate are ensured; the detachable graphite support is formed by combining a plurality of splicing columns, horizontal supporting rods and clamping needles, and the influence of the graphite support on airflow is reduced by adjusting the number of the splicing columns.

The invention belongs to the field of silicon-carbon negative electrode material manufacturing, and particularly relates to a preparation method of a vapor deposition silicon-carbon material based on supercritical carrier gas. The method comprises the following steps: carrying out vacuum degassing on a porous carbon material in a heating state, then taking supercritical gas as carrier gas, assisting with ultrasonic vibration, introducing silicon-containing gas to carry out silicon deposition, and repeatedly carrying out operation until the required silicon content is reached; and finally, introducing a carbon source gas for carbon coating to obtain the silicon-carbon composite material with the core-shell structure. According to the preparation method, uniform deposition of silicon in a porous carbon skeleton is realized through silane vapor deposition with supercritical fluid as carrier gas under the assistance of ultrasonic vibration, the first coulombic efficiency is improved, stress concentration and volume expansion in the charging and discharging process are reduced, and the cycling stability is improved.

The invention relates to a method for preparing a low-temperature silicon nitride film, which adopts a hot filament chemical vapor deposition technology and comprises the following steps of: placing a substrate on a support plate and feeding the support plate into a vacuum reaction chamber; introducing required process gas into the vacuum reaction chamber, wherein the process gas comprises any one or both of ammonia gas and nitrogen gas, hydrogen gas and silane; and dynamically adjusting the temperature of the hot filament, and depositing on the substrate to obtain the required silicon nitride film. In addition, the invention also relates to equipment for preparing the low-temperature silicon nitride film by adopting the method for preparing the low-temperature silicon nitride film. The hot filament chemical vapor deposition technology is adopted, the compact silicon nitride thin film can be prepared when the temperature of the substrate is higher than the room temperature, the application field of equipment is greatly widened, the silicon nitride thin film deposited under the condition that the temperature of the substrate is kept low can be produced under the proper air pressure, and the production efficiency is improved. And manufacturing of HBC cells and perovskite cells in the photovoltaic field is facilitated.

The invention discloses a gas-phase silicon-carbon negative electrode material preparation system and method, and belongs to the technical field of silicon-carbon negative electrode materials. According to the preparation system disclosed by the invention, the solid raw material supply device, the fluidized bed reactor, the vapor deposition rotary furnace, the product post-processing device, the heat recycling device and the gas raw material supply system are arranged, so that the problems of small production scale, high production cost and low production efficiency of vapor deposition equipment in preparation of the vapor silicon-carbon negative electrode material are solved; and after engineering amplification of the technology, vapor deposition uniformity is reduced, a filter is frequently blocked, and high-temperature sealing is difficult to realize.

The invention discloses a preparation method of a proton exchange membrane water electrolysis hydrogen production membrane electrode, and belongs to the technical field of proton exchange membranes, a catalyst carrier is prepared, S101, a polyimide membrane is inversely fixed in a magnetron sputtering vacuum coating chamber, a cavity cover of the magnetron sputtering vacuum coating chamber is closed, vacuumizing is performed, and a substrate is heated; and S102, argon is introduced into a cavity of the magnetron sputtering vacuum coating chamber, coating is started, the power of the bismuth metal target is set to be 0.2-0.5 kW, and the deposition time is 60-1800 s. In the invention, the physical vapor deposition method is utilized to load the catalyst on the surface of the metal oxide carrier with high specific surface area and ordered nanostructure, so that the exposure of active sites of the catalyst is increased, the dosage of the noble metal catalyst is reduced, and the bonding strength between the catalyst and the carrier is enhanced; the catalyst is not easy to separate from the surface of the carrier, and large-scale slurry agglomeration is avoided.

The invention relates to the technical field of semiconductor etching materials, and provides a method for preparing a high-resistivity silicon carbide material and the silicon carbide material. The method comprises the following steps that a substrate is placed in chemical vapor deposition equipment, the chemical vapor deposition equipment is vacuumized, and then inert gas is introduced; silicon carbon source gas and carrier gas are injected into the chemical vapor deposition equipment through a first gas inlet channel, boron source gas is injected into the chemical vapor deposition equipment through a second gas inlet channel, and silicon carbide is deposited on the surface of the substrate through a chemical vapor deposition process; after gradient annealing is carried out, the substrate is removed; wherein in the step 2, the distance between the air inlet of the first air inlet channel and the air inlet of the second air inlet channel is larger than or equal to 20 cm. According to the method, the doping amount of boron in silicon carbide can be obviously improved, so that the resistivity of silicon carbide is improved, and the etching resistance of silicon carbide is improved.

The invention discloses a corrosion resistant fastener. Comprising a fastener base body. The surface of the fastener base body is coated with a corrosion-resistant coating; the corrosion-resistant coating comprises a transition layer, an anti-corrosion layer and a sealing layer which are sequentially stacked from inside to outside. The corrosion-resistant coating is prepared on the surface of the fastener through a vapor deposition technology and a brushing process. The anti-corrosion coating is sequentially composed of a transition layer, an anti-corrosion layer and a sealing layer, so that the problems that an existing fastener surface protection coating is low in hardness, poor in binding force, poor in friction resistance and insufficient in anti-corrosion performance are effectively solved, the anti-corrosion performance of a fastener is improved, and the service life of the fastener is prolonged.

The invention discloses a silicon-carbon negative electrode material, a preparation method thereof and a battery, and the preparation method comprises the following steps: placing a porous carbon material in an inert atmosphere, carrying out heating pretreatment, and removing impurities and moisture on the surface of the material; carrying out vapor deposition on the surface of the pretreated porous carbon material to form a nano silicon layer; depositing a carbon coating layer on the surface of the nanometer silicon layer; and performing oxidation and passivation treatment on the surface of the carbon coating layer to obtain the composite material. According to the preparation method disclosed by the invention, silicon deposition and carbon coating are operated step by step, so that accurate control on the silicon deposition and carbon coating processes can be realized.

The invention provides a silicon-carbon negative electrode material and a preparation method thereof, and relates to the technical field of lithium ion battery negative electrode materials. A preparation method of a silicon-carbon negative electrode material comprises the following steps: S1, reacting metal magnesium with silicon monoxide in an inert atmosphere at normal pressure and high temperature to obtain an initial product; performing acid pickling, water washing and drying on the primary product to obtain a secondary product; and crushing, grading and demagnetizing the secondary product to obtain the porous silicon negative electrode material. S2, dipping the porous silicon negative electrode material in an asphalt mixed solution, stirring, drying, and performing high-temperature carbonization to obtain a silicon-carbon matrix composite material; and S3, carrying out vapor deposition carbon coating on the silicon-carbon matrix composite material, cooling, and screening to obtain the silicon-carbon negative electrode material. The negative electrode material provided by the invention has excellent physical and chemical properties and electrochemical properties.

The invention relates to a preparation method of a silicon-carbon negative electrode material based on organic matter pyrolysis modified porous carbon, and the preparation method comprises the following steps: S1, carrying out activation pore-forming on a carbon raw material to obtain a porous carbon material; s2, placing the porous carbon material in an inert atmosphere, and performing high-temperature pretreatment; s3, performing pyrolysis modification on the pretreated porous carbon material in the presence of small organic molecule steam; s4, carrying out silicon vapor deposition on the modified porous carbon through silane gas to obtain a silicon-carbon precursor; and S5, coating the surface of the silicon-carbon precursor with carbon-containing gas at a high temperature to obtain the product silicon-carbon negative electrode material. Porous carbon is modified, ultramicropores are filled and defects in a pore wall carbon layer are repaired through pyrolysis of the small-molecular organic matter, a compact carbon layer structure is formed on the surface of the pore wall, the conductivity and mechanical strength of the material are improved, and irreversible capacity loss is reduced.

The utility model provides an isolation structure and a chemical vapor deposition device, the isolation structure is arranged in a reaction cavity of the vapor deposition device, a heating device is arranged in the reaction cavity, the reaction cavity comprises a first annular cover, a second annular cover and a third annular cover, the first annular cover comprises a first space used for accommodating the heating device, and the second annular cover comprises a second space used for accommodating the heating device; the second annular cover is arranged on the first annular cover in a sleeving manner; the ring width of the second annular cover is larger than that of the first annular cover, so that a cavity is formed between the first annular cover and the second annular cover. The isolation structure blocks a flowing path of reaction gas in the reaction cavity, and corrosion of the reaction gas to the radio frequency induction coil and the bottom wall of the reaction cavity is reduced; and meanwhile, the radiation heat dissipation of the wafer tray on the radio frequency induction coil is isolated, so that the temperature influence of thermal radiation on the radio frequency induction coil is weakened, and the uniformity of thin film deposition is improved.

The invention discloses a silicon-carbon composite material and a preparation method thereof. The composite material is composed of porous hard carbon, inorganic lithium salt doped with the porous hard carbon and a porous metal frame as a matrix, nano silicon deposited in pores of the matrix, and an amorphous carbon composite material coated on the surface. The preparation method comprises the following steps: uniformly mixing resin, inorganic lithium salt and a porous metal framework, and carrying out hydrothermal reaction, activation and secondary carbonization to obtain a porous carbon complex; and depositing nano silicon and coating the nano silicon with an organic lithium salt through a vapor deposition method to obtain the silicon-carbon composite material. According to the obtained material, expansion is reduced through large-aperture deposited nanometer silicon of the metal frame structure, the defects are reduced through the inorganic lithium salt of the inner core and the organic lithium salt of the outer shell, the ion diffusion rate is increased, and the first efficiency and the rate performance are improved.

The invention provides a negative electrode material, a preparation method thereof and a lithium ion battery, and relates to the technical field of lithium ion batteries. The negative electrode material comprises a silicon-based material core and a coating layer formed on at least part of the surface of the silicon-based material core, wherein the coating layer has a pore structure; the differential pore structure ratio delta phi of the negative electrode material meets # imgabs0 #, wherein delta S is the area of a hysteresis loop in an isothermal adsorption and desorption curve of the negative electrode material; s is the specific surface area of the negative electrode material; delta P is the interval difference value of the relative pressure P / P0 corresponding to the hysteresis loop; qmax is the maximum isothermal adsorption capacity of the negative electrode material. The preparation method of the negative electrode material comprises the step of carrying out CVD (Chemical Vapor Deposition) treatment on a to-be-coated silicon-based material core to obtain the negative electrode material of which the coating layer has a pore structure. The coating layer with a special pore structure is arranged on the negative electrode material, so that the rate capability and the cycle performance of the material are improved.

The invention relates to the technical field of electrolytic copper foil processing, printed circuit board processing and electrolytic copper foil, in particular to a preparation method of a bi-component stripping layer carrier copper foil and the bi-component stripping layer carrier copper foil. The preparation method provided by the invention comprises the following steps: preparing a carrier copper layer; preparing a first inorganic stripping layer on the smooth surface of the carrier copper layer through an electrochemical / physical vapor deposition method; preparing a second inorganic stripping layer on the surface of the first inorganic stripping layer through a low-temperature chemical vapor deposition method; preparing an ultra-thin copper layer on the surface of the second inorganic stripping layer through a pulse electrochemical deposition method; carrying out roughening treatment on the ultra-thin copper layer; and constructing a non-copper functional layer on the surface of the roughened ultra-thin copper layer, and carrying out silane coupling agent coating treatment to obtain the double-component stripping layer carrier copper foil. The two-component inorganic matter is used as the stripping layer of the carrier copper foil, the heat resistance of the stripping layer of the carrier copper foil is improved, and meanwhile the stability of the separating force between the ultra-thin copper layer and the carrier copper layer is improved.

The invention discloses a BDD electrode material and a preparation method thereof. The preparation method comprises the following core steps: pretreating the surface of a porous titanium substrate; depositing a nanoscale TiN film layer on the surface of the pretreated porous titanium substrate in advance; depositing a layer of single-walled carbon nanotube network on the TiN thin film layer by using an electrophoretic deposition method; growing a highly-doped BDD layer on the single-walled carbon nanotube network by adopting a plasma enhanced chemical vapor deposition technology; repeating the two steps to form a multi-layer SWCNT / BDD composite structure, and controlling the thickness of the multi-layer SWCNT / BDD composite structure to be 1-50 microns; and finally, depositing a low-doped BDD active layer with the thickness of 1-5 microns by adopting a hot filament chemical vapor deposition (HFCVD) technology. According to the pulse laser assisted preparation process provided by the invention, the femtosecond laser pulse is introduced to replace traditional plasma treatment, so that the process flow is simplified, and the efficiency is improved; according to the technology, the process is simplified, the quality of the TiN film is improved through accurate energy input, and a new way is opened up for further improving the performance of the BDD electrode.

A process for forming a vapor-deposited ZIF-8 metal organic framework includes: conducting a gas surface reaction between an ALD-deposited ZnO and 2-methylimidazole to form a vapor-deposited ZIF-8 metal organic framework, wherein the gas surface reaction is conducted at a temperature greater than 140 C, and wherein the gas surface reaction is conducted at a pressure of less than 1000 mTorr. In a particular embodiment, the gas surface reaction is conducted at a temperature of 160 C. A process for preparing a laminate includes: performing ALD of zinc oxide as a base between 1 nm to 10 nm in thickness, exposing 2-methylimidazole vapor phase linker at chemical vapor deposition at a temperature range of greater than 140 C to less than or equal to 180 C in a vacuum condition, and cycling of the ZnO ALD and 2-methylimidazole exposure to deposit a film or fill a gap.

The invention discloses an atomic layer deposition silicon-carbon composite material, a preparation method and application thereof, a core-shell coating structure composed of an inner core and an outer shell is adopted, the inner core is a multi-element doped silicon-carbon material, and the outer shell is a solid electrolyte composite layer; the mass ratio of the inner core to the shell is (80-95): (5-20); the solid electrolyte is deposited on the surface of the specific silicon carbon material through an atomic vapor deposition method, so that the expansion is reduced, and the cycle performance of the battery is improved.

The invention discloses a graphene-coated hard carbon negative electrode material and a preparation method thereof, and belongs to the technical field of hard carbon negative electrode materials. The preparation method of the graphene-coated hard carbon negative electrode material comprises the following steps: carrying out pretreatment and three-step soaking on coconut shells, carrying out biomass carbonization, mixing with a microbial suspension, and adsorbing to obtain a microbial adsorption type hard carbon material; and then carrying out surface treatment, chemical vapor deposition, impregnation, secondary chemical vapor deposition and annealing treatment on the microbial adsorption type hard carbon material to obtain the graphene coated hard carbon negative electrode material. The negative electrode material prepared by the method is high in first discharge capacity, high in first coulombic efficiency and good in cycle performance.

The invention belongs to the technical field of ultrahigh-temperature ceramic materials, and discloses a high-purity porous tantalum carbide ceramic and a preparation method and application thereof.The preparation method comprises the steps that a porous graphite substrate is horizontally placed in a vertical vapor deposition chamber, after the chamber is vacuumized, argon is introduced, the reaction air pressure is increased to 10-100 mbar, and the graphite substrate is heated to the deposition temperature of the tantalum element; inorganic tantalum salt and hydrogen are conveyed into the cavity, and tantalum element deposition of the first area is achieved; argon is introduced into the reaction chamber, the reaction air pressure is pressurized, the carrier gas flow of the inorganic tantalum salt is increased, the deposition temperature of the tantalum element is increased, tantalum element deposition of the second area is achieved, and the process is repeated to achieve sequential deposition of the tantalum element on the porous graphite substrate from inside to outside; after the tantalum element is completely deposited, the high-purity porous graphite substrate is heated and reacts to obtain tantalum carbide, reaction conditions are adjusted, so that reaction airflow gradually permeates at different depths of the porous material, and Ta is uniformly deposited at different positions.

The invention discloses a gallium nitride heterojunction material structure and a growth method thereof, and relates to the technical field of semiconductor single crystal films, the material structure comprises a SiC substrate, an AlN nucleating layer, an AlGaN buffer layer, a GaN channel layer, an AlN insertion layer, a gradient component AlGaN barrier layer and a GaN cap layer from bottom to top; the material is prepared on a substrate in an epitaxial mode through a metal organic matter chemical vapor deposition method. AlGaN with gradually-changed Al components is adopted as the barrier layer, so that the electric field intensity of the barrier is reduced, the voltage endurance capability of the device is improved, and the power density and the reliability of the device are improved.