57results about How to "High resistivity" patented technology

The invention discloses a TBC battery structure, a preparation method thereof and a TBC battery, in the structure, a P region and an N region are respectively provided with a P-type / N-type doped polycrystalline silicon passivation layer, and an oxygen-doped polycrystalline silicon layer is arranged between the P region and the N region. The preparation method comprises the step of preparing the P-type / N-type doped polycrystalline silicon passivation layer and the oxygen-doped polycrystalline silicon layer on the P region and the N region. In the structure, the oxygen-doped polycrystalline silicon layer is arranged between the P region and the N region, so that the P region and the N region can be effectively separated, an excellent shadow shielding resisting function of a corresponding assembly can be realized, and the generating capacity of the assembly in a shadow shielding environment can be further improved. According to the preparation method, the design of depositing multiple tunneling oxide layers and polycrystalline silicon layers at a time, the design of a laminated mask, a new isolation mode, an efficient cleaning process and the like are adopted, the problems that an existing TBC battery preparation process is tedious, boron-doped polycrystalline silicon laser ablation residues exist, the investment and generation cost is high and the like are effectively solved, and the preparation method is a brand-new TBC battery route.

The invention relates to the technical field of dielectric energy storage device materials, in particular to high-entropy designed bismuth ferrite-based energy storage ceramic as well as a preparation method and application thereof, the chemical composition formula of the material is (0.7-x) Bi < 0.9 > (Sm < 0.5 > Gd < 0.5 >) < 0.1 > FeO < 3-0.3 > (Sr < 0.5 > Ba < 0.5 >) TiO < 3-x > NaNbO < 3-y > MnO < 2 >, the value range of x is 0-0.15, and the value range of y is 0-0.005. The relaxation ferroelectric material is designed by adopting a high-entropy strategy, and various elements occupy the same site of the material to generate lattice distortion, so that the relaxation characteristic of bismuth ferrite-based ceramic is promoted, and a ferroelectric hysteresis loop is optimized. The NaNbO3 anti-ferroelectric material is introduced, the long-range ferroelectric order is destroyed, the local random field is enhanced, and a low Pr value can be obtained. And in addition, the concentration of oxygen vacancies can be reduced by properly adding 0.5% mol of MnO2, so that the leakage current of the material is reduced, the energy storage efficiency is improved, and the material design not only enriches the application field of the high-entropy ceramic, but also provides a new thought for improving the performance of the energy storage ceramic.

This application discloses a soft magnetic powder composite, a magnetic powder core material, and an insulating coating method based on organic growth, belonging to the field of soft magnetic materials technology. The soft magnetic powder composite of this application includes soft magnetic powder and an insulating coating layer, with the insulating coating layer encapsulating the soft magnetic powder. The insulating coating layer is prepared by a crosslinking reaction of dopamine hydrochloride (hereinafter referred to as dopamine) and polyethyleneimine. The soft magnetic powder is selected from metals and / or alloys containing Fe. The insulating coating method of this application has low hazard, achieves high stability within a certain temperature range, features scalable and controllable insulating film thickness, high film uniformity, and effectively isolates interparticle eddy currents. Simultaneously, the insulating coating layer has strong adhesion, reducing the amount of insulating adhesive used, facilitating molding, reducing the dilution effect of non-magnetic phases, and further improving the magnetic properties of the matrix.

The invention discloses a silicon single crystal rod and a preparation method thereof, a silicon wafer and a solar cell, and belongs to the technical field of photovoltaic module preparation. The single crystal silicon rod contains an antimony element and a hydrogen element, the doping concentration of the antimony element in the single crystal silicon rod is Ca, the doping concentration of the hydrogen element in the single crystal silicon rod is Cb, and Ca / Cb is greater than or equal to 1E <-3 > and less than or equal to 4E + 2. According to the silicon single crystal rod provided by the invention, the antimony and the hydrogen are doped at the same time, and the effective segregation coefficient of the antimony in the crystalline silicon is improved through the interaction of the hydrogen and the antimony, so that the resistivity change uniformity of the silicon single crystal rod is improved, the oxygen content of the silicon single crystal rod is improved, the service life of the silicon single crystal rod is prolonged, and the resistivity is accurately controlled; the resistivity of the monocrystalline silicon rod and the derivative product thereof is more uniform and concentrated, and the performance and the production efficiency of the czochralski monocrystalline silicon and the battery can be effectively improved.

The invention relates to the field of conductive contact manufacturing, in particular to a novel anti-oxidation contact which comprises a silver conductive layer arranged on a circuit board base material, and the silver conductive layer is covered with a resistance layer with anti-oxidation performance. And the resistance layer is made of ruthenium resistance paste. The conductive contact has the advantage that the production cost of the conductive contact is reduced.

The invention discloses a Ce-based alloy sputtering target and a preparation method thereof, the sputtering target comprises any one of Sm, Gd and Y, and further comprises Ce and inevitable impurities, the content range of the Sm, Gd or Y element is 5-25 atom%, the impurities comprise C, S and O, and the Vickers hardness of the sputtering target is greater than 35 Hv. The Ce-based alloy sputtering target provided by the invention solves the problems that the existing Ce-based alloy target is easy to oxidize in the sputtering process, the sputtering rate is unstable, the formed CeO2-based electrolyte film is not compact and the like.

The subject of the present invention is to provide a liquid crystal composition having a liquid crystal phase in a wide temperature range, high refractive index anisotropy, high absolute value of dielectric constant anisotropy, low viscosity or rotational viscosity, good solubility at low temperature, high resistivity and voltage holding rate, thermal and light stability, and negative Δε; further, by using the liquid crystal composition, a high-speed response liquid crystal display element such as VA type and PSVA type with excellent display quality and less prone to display defects such as drip marks and line afterimages is provided. The inventors have studied various liquid crystal compounds and various chemical substances and found that by combining specific compounds, the aforementioned problems can be solved and a liquid crystal display element using the liquid crystal composition can be provided.

The invention discloses a novel carbonized polybenzoxazine aerogel and a preparation method thereof, the novel carbonized polybenzoxazine aerogel is prepared by carbonizing a novel polybenzoxazine aerogel, and the invention belongs to the technical field of aerogel materials. The preparation method comprises the following steps: preparing a polybenzoxazine solution; putting the polybenzoxazine solution into a mold to form wet gel; aging the wet gel, and drying at normal pressure for 24 hours after aging; the aged wet gel is washed with N, N-dimethylformamide, and wet conductive gel is obtained; and drying the wet gel at normal temperature and normal pressure to obtain the novel polybenzoxazine aerogel. The polybenzoxazine aerogel is subjected to heat preservation for 6 hours at the temperature of 800 DEG C in an argon environment to be carbonized, then furnace cooling is carried out, and the novel carbonized polybenzoxazine aerogel is obtained after the polybenzoxazine aerogel is cooled. The preparation method has the advantages that the bisphenol F type benzoxazine monomer is used as a raw material, and the preparation method is simple through acid catalytic polymerization and normal-pressure drying; compared with other aerogel materials, the aerogel disclosed by the invention has excellent electromagnetic shielding performance and relatively high resistivity.

The present application relates to the field of magnetic material technology, and more specifically, to an aluminum-nickel-iron magnetic powder core and its preparation method and application. An aluminum-nickel-iron magnetic powder core comprises the following components in parts by weight: 30-85 parts of modified aluminum-nickel-iron magnetic powder, 11-55 parts of resin composition, 2-10 parts of diluent, 0.3-1.2 parts of curing agent and 0.5-2.5 parts of accelerator, wherein the resin composition comprises polyetherimide modified epoxy resin, phenolic resin and hyperbranched polyimide resin. An aluminum-nickel-iron magnetic powder core of the present application improves the problems of insufficient magnetic properties, high eddy current loss, poor high-frequency performance of existing magnetic powder cores, and difficulty in meeting some market demands, so that the obtained aluminum-nickel-iron magnetic powder core has high effective magnetic permeability, large magnetic flux density, and low eddy current loss, meeting the market demand for magnetic powder core performance.

The invention discloses a method for bonding aluminum nitride ceramics by using inorganic ceramic slurry, which belongs to the technical field of aluminum nitride ceramics, and comprises the following steps: preparing glass powder: preparing fine glass powder with the particle size of 4-6 microns from 5-10% of magnesium oxide, 20-30% of calcium oxide, 20-30% of aluminum oxide and 30-55% of silicon dioxide for later use; preparing laminating slurry: mixing 10%-20% of glass powder, 20%-30% of AlN and 50%-70% of IPA prepared in the previous step to form mixed powder, and then mixing 70%-80% of the mixed powder, 5%-10% of a binder and 15%-20% of TPO to form the laminating slurry; silk-screen printing: putting the prepared laminating slurry on a screen printing plate for printing; and sintering: placing the prepared aluminum nitride shaft on the printed aluminum nitride disc for sintering.

The hot-rolled wire rod for the blasting lead comprises the following chemical components in percentage by mass: 0.03 to 0.06 percent of C, less than or equal to 0.030 percent of Si, 0.20 to 0.30 percent of Mn, less than or equal to 0.020 percent of P, less than or equal to 0.020 percent of S, less than or equal to 0.100 percent of Cr, less than or equal to 0.100 percent of Ni, less than or equal to 0.100 percent of Cu, less than or equal to 0.0070 percent of N and the balance of iron and other inevitable impurities. The invention further relates to a production method of the hot-rolled wire rod for the blasting lead, the production method comprises a smelting process and a rolling process, and the smelting process comprises the steps of KR desulfurization and slagging-off, converter smelting, LF refining and continuous casting. The steel wire rod for the blasting lead produced through the production method is good in mechanical property, the customer drawing machining process performance is excellent and stable, and the manufactured 0.55 mm blasting lead is good in resistivity and conductivity.

This application provides a semiconductor structure and its fabrication method. The semiconductor structure includes a substrate, a channel layer, and a barrier layer stacked sequentially. The channel layer and barrier layer include a gate region and source and drain regions located on both sides of the gate region. A P-type semiconductor layer is located on the gate region. A first hydrogen-rich layer is located on the side of the P-type semiconductor layer near the drain region. The hydrogen concentration of the first hydrogen-rich layer is greater than that of the P-type semiconductor layer. Compared with the P-type semiconductor layer, the resistivity of the first hydrogen-rich layer is higher, which can reduce the leakage current on the side of the gate near the drain when the gate is off and reduce the electric field strength on the drain side when the gate is on, thereby improving the reliability of the device.

This application provides a method for inverting the dynamic changes of the seabed sedimentary environment based on three-phase potential, including in-situ data processing, electrical signal calibration, mathematical model establishment, and dynamic change analysis. By deploying a seabed electrode array, signals such as spontaneous potential, resistivity, and redox potential are acquired in real time. An inversion algorithm is used to deduce seabed sedimentary environment characteristics, such as seabed interface location, suspended particle concentration, sediment density, porosity, and water content. This method, combined with multi-frequency signal analysis, can monitor changes in the seabed sedimentary environment in real time and identify sediment movement. Compared with existing technologies such as CN118153411B and CN110411923B, this invention covers richer inversion content, and the complementarity of potential signals improves monitoring accuracy and efficiency, exhibiting stronger adaptability and reliability. This method has lower equipment and maintenance costs, is suitable for large-scale, long-term monitoring, and can provide innovative solutions in fields such as deep-sea monitoring, environmental assessment, and resource exploration.

The invention relates to an electrode membrane and a preparation method and application thereof.The electrode membrane comprises a gel electrolyte, active particles, a linear conductive agent and a fiber binder, part of the linear conductive agent wraps the surfaces of part of the active particles to form nerve nodes, and the fiber binder wraps the surface of the active particles. The neural nodes and the active particles are distributed in a neural network structure formed by the gel electrolyte, the linear conductive agent and the fiber binder. The electrode diaphragm disclosed by the invention is high in strength, improves the mechanical difference between the rolling direction and the non-rolling direction, gives full play to the advantages of a dry method, is particularly suitable for a positive pole piece, and is favorable for realizing industrial popularization.

This invention relates to a MIL-100(Fe)-derived ErFeO3 / α-Fe2O3 gas-sensitive material, its preparation method, and its application, belonging to the field of gas sensor and environmental monitoring technology. A method for preparing a MIL-100(Fe)-derived ErFeO3 / α-Fe2O3 gas-sensitive material involves: slowly adding FeCl3 solution dropwise to H3BTC solution at room temperature; after uniform mixing, maintaining the mixture at 150℃~210℃ for 20 hours in a reaction vessel to obtain an orange-red substance; washing and drying to obtain MIL-100(Fe); dispersing the obtained MIL-100(Fe) in methanol; dissolving Er(NO3)3·6H2O in the above solution and reacting for a period of time; washing, centrifuging, and drying; transferring the obtained product to a muffle furnace and calcining under an oxygen atmosphere to obtain the ErFeO3 / α-Fe2O3 gas-sensitive material. The method for preparing porous metal oxide-based gas-sensitive materials using MOF materials as precursors and rare earth element modification proposed in this invention has advantages such as versatility, controllability, and recyclability compared to traditional methods for preparing metal oxide-based gas-sensitive materials.

The invention discloses an iron-silicon-chromium alloy composite material with high magnetic conductivity and low loss and a preparation method thereof, and the preparation method comprises the following steps: the main component comprises the following components in percentage by mass: 95-99.5% of iron-silicon-chromium alloy powder; and 0.5%-5% of inorganic nano aluminum oxide. The preparation method comprises the following steps: carrying out wet ball milling treatment on Fe-Si-Cr magnetic powder and nano aluminum oxide by adopting a mechanical alloying method, drying after treatment to obtain a mixed dry material, adding epoxy resin glue into the mixed dry material, and finally carrying out dry-wet granulation to obtain a target product, namely the Fe-Si-Cr alloy composite material. According to the invention, through the process combination of mechanical alloying and granulation, an insulating system compositely coated with inorganic nano aluminum oxide and epoxy resin is obtained, and firm coating of an insulating layer and good formability of composite powder are realized, so that the magnetic conductivity of the alloy is greatly improved, the loss of the alloy is reduced, the magnetic conductivity of the alloy is 43.2 at-100 kHz, and the loss of the alloy is 328.8. A soft magnetic composite material solution with excellent comprehensive performance is provided for related industries, and the requirements for integration and reliability in the fields of integrally-formed inductors, transformers and the like are met.

The invention provides a resin composition and application thereof, a layer-adding film and a preparation method and application thereof, and belongs to the technical field of composite materials. The resin composition is prepared from the following components in parts by mass: 10 to 30 parts of modified benzoxazine prepolymer; 10 to 40 parts of modified polyphenyl ether resin; 1-5 parts of an initiator; and 100 to 300 parts of an inorganic filler. The modified benzoxazine prepolymer is synthesized from raw materials including allyl benzoxazine and a diamine compound containing a benzocyclobutene structure. According to the present invention, the diamine compound containing the benzocyclobutene structure is adopted to modify the allyl benzoxazine, and the mass parts of the modified benzoxazine prepolymer, the modified polyphenyl ether resin, the initiator and the inorganic filler in the resin composition are controlled, such that the dielectric property and the heat resistance of the resin composition can be significantly improved; and the film-forming property is excellent, and the requirement of a layer-adding film is met.

The application discloses an annealing method of a cadmium zinc telluride wafer, which comprises the following steps: S1, placing the cadmium zinc telluride wafer and tellurium powder into different positions of an annealing furnace, and sealing the annealing furnace and then vacuumizing; S2, slowly heating the annealing furnace to 790-805 DEG C, and then performing heat preservation; and S3, slowly cooling, and thus obtaining the cadmium zinc telluride wafer. The annealing method has the advantages of easy operation, short technological process, strong controllability, short time required, low number of bright spots of the cadmium zinc telluride wafer with a diameter of 0.3 microns after annealing (less than 30), low internal stress, uniform composition, high resistivity, few particle inclusions, and the like, and the method can process hundreds of wafers at one time, so that the processing efficiency is high, and the method has considerable application prospect.

The application discloses a method for detecting the effect of ground pre-grouting of a vertical shaft by using geophysical logging, before grouting, 1-3 grouting holes are selected and drilled to the designed depth; a geophysical logging system is arranged; the selected grouting holes are subjected to geophysical logging before and after grouting by using the geophysical logging system; the physical properties of the stratum reflected by the geophysical logging data of the grouting holes before and after grouting are compared and analyzed, the change trend of the water conductivity and stability of the grouted stratum is obtained, and the grouting water plugging and reinforcement effect is evaluated. The geophysical logging method is used for detecting the water plugging and reinforcement effect of the ground pre-grouting of a vertical shaft, and a simple and reliable evaluation method is provided, the defects of large hydrological test error and slow excavation measurement lag in the current evaluation method are overcome, the stratum condition information and guidance are provided for the grouting engineering construction, reliable basis is provided for the grouting engineering acceptance, and technical support is provided for the application of the ground pre-grouting technology of a vertical shaft and the safe and rapid construction of a vertical shaft.

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

The invention relates to the technical field of cable preparation, and discloses a manufacturing method of an airtight cable for ships, the cable is characterized in that a wrapping layer, a water-blocking buffer layer, a middle reinforcing layer and an external protective layer are sequentially arranged outside a cable core, the cable core is formed by twisting a plurality of wire cores, and glass fiber filling ropes are filled in gaps of the wire cores; the wrapping layer is a protective layer wrapping the periphery of the conductor in the cable structure, is made of an insulating material, and can prevent current leakage and improve the electrical performance of the cable; the water-blocking buffer layer wraps the wrapping layer, is made of water-blocking powder, and is used for preventing water from permeating into the cable and providing mechanical protection and buffer effects at the same time; the middle reinforcing layer is usually made of fibers, copper wires or steel wires and can provide additional mechanical protection and electrical performance; the external protection layer is made of polyvinyl chloride and polyethylene materials and is used for protecting the cable from being damaged by external physical, chemical and environmental factors.

The utility model relates to spinning production technical field, and more particularly to the impeller cleaning system of electrostatic precipitator fan for spinning workshop, include: base, set up in spinning workshop, drive structure, install in the base, the output end of drive structure is connected with centrifugal impeller, impeller cover, connect to the base, cover in the outside of centrifugal impeller, and the impeller cover is equipped with air inlet pipe and exhaust pipe, and the air inlet channel of the inside of air inlet pipe is formed with the centrifugal impeller center just opposite. The utility model discloses through the transformation of original dust removal fan, increase the humidity of impeller chamber with the increase of spraying device at the bottom, make the gas be humidified before discharging from the exhaust pipe, and the resistivity of spinning dust after humidification increases, is favorable in the subsequent electrostatic field is adsorbed, improves dust removal efficiency, in addition, sets up the cover that can open at the bottom of impeller chamber, so that the operator can more easily complete the cleaning of the dust accumulation inside impeller chamber, reduces the equipment downtime.

The application discloses a composite negative electrode sheet, a preparation method thereof and a lithium battery. The composite negative electrode sheet comprises a current collector and an active material layer, a first insulating and heat-conducting coating layer and a second insulating and heat-insulating coating layer which are sequentially stacked on the current collector, wherein the first insulating and heat-conducting coating layer comprises an insulating and heat-conducting material, the second insulating and heat-insulating coating layer comprises an insulating and heat-insulating material, the particle size D50 of the insulating and heat-conducting material is D v1 , and the particle size D50 of the insulating and heat-insulating material is D v2 . D v1 <D v2 The composite negative electrode sheet can effectively improve the safety performance of the lithium battery.

The application provides a non-radio frequency piezoelectric acoustic device and earphone. The non-radio frequency piezoelectric acoustic device comprises a substrate, an insulating layer and a piezoelectric functional layer. The substrate is made of a low-resistance material, so that the loss of the non-radio frequency piezoelectric acoustic device during operation can be effectively reduced. The substrate with low resistivity has a large number of free carriers. When the electric field in the piezoelectric functional layer changes, the free carriers can quickly respond and move to form effective mirror charges, which can play a good electromagnetic shielding effect, reflect the energy back to the piezoelectric functional layer, and prevent the energy from leaking and dissipating to the deeper and farther substrate.

A method for refining germanium by zone melting includes: S1, germanium material processing; S2, furnace loading; S3, moving the heating coil from the head to the tail; S4, zone melting, including: S41, when the germanium material at the tail is completely solidified, moving in the reverse direction, first quickly moving to point B, melting the material from point B, and moving from point B to the head; S42, when the germanium material at the head is completely solidified, moving in the forward direction, first quickly moving to point A, melting the material from point A, and moving from point A to the tail; S43, repeating S41 and S42; 5. Zone Melting II, including: S51, when the germanium material at the tail end is completely solidified, move in the reverse direction, first quickly move to point B1, which is farther from the tail end than point B, melt the material from point B1, and move from point B1 to the head; S52, when the germanium material at the head end is completely solidified, move the heating coil in the forward direction, first quickly move to point A1, which is farther from the head end than point A, melt the material from point A1, and move from point A1 to the tail end; S53, repeat S51 and S52; S6, turn off the heating power, cool, turn off the nitrogen, and remove.

The application provides a composite foil, a preparation method of the composite foil, a copper-clad plate and a printed circuit board. The composite foil comprises a first metal layer, an intermediate layer and a second metal layer which are stacked, and the intermediate layer is arranged between the first metal layer and the second metal layer. The intermediate layer comprises a first resistance layer, a dielectric layer and a second resistance layer which are stacked, the dielectric layer is arranged between the first resistance layer and the second resistance layer, a surface of the first resistance layer away from the dielectric layer is connected with the first metal layer, and a surface of the second resistance layer away from the dielectric layer is connected with the second metal layer. The composite foil provided by the application can realize the integration of the buried capacitor function and the buried resistance function on one device, and is beneficial to cost saving.

The application relates to a resistance conductive material and a preparation method and application thereof, wherein the resistance conductive material comprises, from bottom to top, a copper foil layer, a transition layer and a resistance layer; the resistance layer comprises a dispersion reinforcing phase and a homogeneous phase; the dispersion reinforcing phase is subjected to surface pretreatment before being added into an electroplating solution. Through the introduction of the transition layer and the dispersion reinforcing phase, the diffusion of copper into the resistance layer is inhibited, the high resistivity of the resistance layer is maintained, and the application prospect is good.

This invention relates to the field of passive radio frequency microwave devices, specifically to a filter-type Wilkinson chip power divider and its fabrication method. The divider includes an aluminum nitride substrate, an adhesion layer, a metal ground plane, a buried dielectric layer, three-dimensional interdigitated tantalum nitride resistors, a filter power divider metal structure, and a passivation layer. The adhesion layer is disposed on the surface of the aluminum nitride substrate, the metal ground plane is disposed on the surface of the metal adhesion layer, the buried dielectric layer covers the surface of the metal ground plane, and the buried dielectric layer has resistor trenches and interconnecting vias etched inside. The three-dimensional interdigitated tantalum nitride resistors are disposed within the resistor trenches and electrically connected to the metal ground plane through the interconnecting vias. The filter power divider metal structure is disposed on the surface of the buried dielectric layer, and the passivation layer is deposited on the surface of the filter power divider metal structure. This invention achieves integrated power distribution, passband filtering, port isolation, and harmonic suppression functions through a single-chip structure. Compared to traditional modular solutions, it significantly reduces the device size and can meet the miniaturization and high integration requirements of radio frequency front-ends.

The application relates to the technical field of magnetic materials, in particular to a pressure anisotropy sintered magnetic powder capable of avoiding caking, a preparation method of the pressure anisotropy sintered magnetic powder and a magnet containing the pressure anisotropy sintered magnetic powder. The pressure anisotropy sintered magnetic powder is composed of UiO-66 and SmFeN, the preparation method is that high-purity samarium blocks and iron blocks are used as raw materials, alloying, crushing into powder, nitriding and mixing ball milling are carried out to obtain the pressure anisotropy sintered magnetic powder, the magnet contains the pressure anisotropy sintered magnetic powder capable of avoiding caking, and the magnet is obtained through hole breaking, blank preparation and sintering. The UiO-66 in the pressure anisotropy sintered magnetic powder provided by the application can absorb moisture, prevent liquid phase bridges from being formed between the magnetic powders, and further avoid caking between the magnetic powders.

The application discloses a low-pressure forming high-frequency low-loss SMC magnetic powder core and a preparation method and application thereof, wherein amorphous iron-based alloy fine powder is added into iron-silicon-chromium coarse powder, different contents of nano calcium carbonate are added into the compounded magnetic powder, and then high-content epoxy resin is melted and mixed in a mixing mill to obtain a high-fluidity mixing material.After crushing, a low-pressure forming high-frequency low-loss SMC granular material is obtained, which is formed by hot pressing under low pressure, and the obtained annular magnetic powder core is annealed in a vacuum oven, so that the low-pressure high-frequency low-loss SMC magnetic powder core is obtained.Through the method, the SMC magnetic powder core with a forming pressure less than 50 MPa and a magnetic loss less than 2100 kW / m 3 under the conditions of 20 mT and 2 MHz can be obtained.