The invention discloses a BCD device and a manufacturing method thereof, which belong to the technical field of semiconductor power devices. In the invention, semiconductor devices such as a high-voltage nLIGBT, three high-voltage nLDMOSs, a low-voltage NMOS, a low-voltage PMOS, a low-voltage NPN and the like are synchronously integrated on the same chip, wherein the high-voltage nLIGBT, the high-voltage nLDMOSs and the low-voltage NPN are directly arranged on a single-crystal p-type substrate; the low-voltage NMOS is arranged in a p-type well; and the low-voltage PMOS is arranged in an n-type epitaxial layer. As p-type reduced-field layers are respectively arranged between the n-type epitaxial layer and an n-type shift region well, the n-type epitaxial layer on a p-type buried layer supplies an extra surface conducting channel to high-voltage devices, the conducting channel is increased, the specific on resistance of the high-voltage devices is reduced, and the manufacturing cost of the chip is further reduced. The nLIGBT device and the nLDMOS devices of the invention further have the characteristics of high input impedance, low output impedance and the like, and a high-voltage power integrated circuit formed by the nLIGBT device and the nLDMOS devices can be used in a plurality of products, such as consumer electronics, display drivers and the like.