198results about How to "Lower specific on-resistance" patented technology

A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a FET structure, where multiple channels and multiple gate regions are formed in order to achieve a lower specific on-resistance, and a higher control on the transport properties of the device. No dielectric layer is present between gate electrodes and device channels, decreasing the parasitic capacitance associated with the gate terminal. The fabrication of the device does not require Silicon On Insulator techniques and it is not limited to Silicon semiconductor materials. It can be fabricated as an enhancement or depletion device with much more control on the threshold voltage of the device, and with superior RF performance.

A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a Hetero-structure FET structure, where the access regions have been eliminated so as to effectively obtain a lower specific on-resistance, and a higher control on the transport properties of the device, drastically reducing the dispersion phenomena associated with these regions. The present invention can be realized both with polar and non-polar (or semi-polar) materials, without requiring delta doping implantation. It can be fabricated as an enhancement or depletion mode device with much higher control on the device threshold voltage with respect to state-of-the-art HFET devices, and achieving superior RF switching performance. Furthermore, due to the absence of access regions, enhancement mode devices can be realized without discontinuity in the channel conductivity, which results in an even lower on-resistance.

An integrated circuit includes a plurality of trench MOSFET and a plurality of trench Schottky rectifier. The integrated circuit further comprises: tilt-angle implanted body dopant regions surrounding a lower portion of all trenched gates sidewalls for reducing Qgd; a source dopant region disposed below trench bottoms of all trenched gates for functioning as a current path for preventing a resistance increased caused by the tilt-angle implanted body dopant regions.

The invention discloses a BCD device and a manufacturing method thereof, which belong to the technical field of semiconductor power devices. In the invention, semiconductor devices such as a high-voltage nLIGBT, three high-voltage nLDMOSs, a low-voltage NMOS, a low-voltage PMOS, a low-voltage NPN and the like are synchronously integrated on the same chip, wherein the high-voltage nLIGBT, the high-voltage nLDMOSs and the low-voltage NPN are directly arranged on a single-crystal p-type substrate; the low-voltage NMOS is arranged in a p-type well; and the low-voltage PMOS is arranged in an n-type epitaxial layer. As p-type reduced-field layers are respectively arranged between the n-type epitaxial layer and an n-type shift region well, the n-type epitaxial layer on a p-type buried layer supplies an extra surface conducting channel to high-voltage devices, the conducting channel is increased, the specific on resistance of the high-voltage devices is reduced, and the manufacturing cost of the chip is further reduced. The nLIGBT device and the nLDMOS devices of the invention further have the characteristics of high input impedance, low output impedance and the like, and a high-voltage power integrated circuit formed by the nLIGBT device and the nLDMOS devices can be used in a plurality of products, such as consumer electronics, display drivers and the like.

The invention relates to a super junction lateral double-diffused metal-oxide semiconductor (LDMOS) device and belongs to the field of semiconductor power devices. By means of the super junction LDMOS device, evenly distributed N+ islands are embedded in a P type substrate of a traditional super junction LDMOS device, and a P type electric field screening buried layer is added between an active area and the substrate. An N+ island (2) can improve longitudinal withstand voltage of the device by enhancing internal electric field, simultaneously generates extra electric charge to eliminate substrate auxiliary depletion effect, and further improves breakdown voltage of the device. The P type electric field screening buried layer (3) can screen high electric fields generated by an N+ island near an active end, lower electric field peak value near the active area, and form super junction with an N type cushion layer; and a super junction drift area is provided, the device is enabled to have multiple super junction structures, accordingly electric field distribution inside the device can be effectively improved, breakdown voltage of the device is improved, conduction ratio resistance of the device is simultaneously lowered by improving dosage concentration of the drift area, and finally the aim of effectively reducing device area and lower device cost can be achieved.

The invention discloses an SOI LDMOS device with an extending gate structure, and belongs to the technical field of semiconductor power devices. According to the SOI LDMOS device, the extending gate structure extending from a polysilicon gate to a drain electrode is introduced into the surface of a drift region of a conventional SOI LDMOS device. A PN junction which is reversely biased when the device is in the on state is introduced into the extending gate structure to reduce a leakage current. The extending gate structure is characterized in that on one hand, when the device is in the on state, a majority carrier accumulation layer is sensed on the portion, close to extending gate media, of the surface of the drift region, an ultralow resistance channel is provided for the on-state current, the specific on resistance of the device is accordingly and remarkably reduced, and the specific on resistance does not depend on the doping concentration of the drift region; on the other hand, when the device is in the off state, distribution of an electric field in the drift region is adjusted through the extending gate structure, and the voltage resistance of the device is accordingly improved. In addition, the vast majority of the on-state current flows through the low-resistance channel of the charge accumulation layer, temperature distribution of the SOI LDMOS device is accordingly even, and the SOI LDMOS device is stable.

The invention discloses an LDMOS (laterally diffused metal oxide semiconductor), a semiconductor device integrated with the LDMOS and a manufacturing method thereof. The semiconductor device comprises an LDMOS 1, a CMOS (complementary metal oxide semiconductor) 2, an NPN 3 and a buried channel resistor 4 which are arranged in a P type substrate 10. The LDMOS 1 comprises an N type drift region 20, a P+ well contact region 40, a P type body region 70, an N+ source region 50, an N+ drain region 60, a gate dielectric layer 100, a source metal 80, a drain metal 90, a field oxidation layer 110 and a metal front medium 120 as well as a P type field reducing layer 30A and at least one P type buried well 30B, wherein no gap is kept between the N type drift region 20 and the P type body region, the P type buried well 30B is arranged below the P type body region 70 and is contacted with the P type body region 70, the P type field reducing layer 30A is arranged below the field oxidation layer 110 and is surrounded by the N type drift region, and a gap is kept between the P type filed reducing layer 30A and the field oxidation layer 110. The LDMOS in the invention has low on resistance and high withstand voltage and is easy to integrate, and the whole manufacturing process of the semiconductor device has simple steps and has low requirement to equipment.

The invention belongs to the technical field of a power semiconductor, and particularly relates to a trench gate power MOSFET (metal oxide semiconductor filed-effect transistor) device. The trench gate power MOSFET device has the following characteristics: 1, a crosswise heavily-doped semiconductor drain region and a longitudinal drain extension region are adopted, so that the device integrates the advantages of a VDMOS that can generate high current in a shunt-wound manner and a LDMOS that can be integrated easily; 2, a segmentation trench gate structure is adopted, so that the trench density can be improved, the device dimension can be saved, and the specific conduction resistance of the device can be lowered; and 3, RESURF structures are formed in the semiconductor region and a crosswise drift region, so that the surface electric field of the device can be improved, and the doping concentration of the crosswise drift region can be improved; and meanwhile, under a conduction state, a low-resistance channel is formed in the crosswise drift region, so that the power consumption of the device is dramatically lowered.

The invention relates to a BCD semiconductor device and a manufacturing method thereof. The BCD semiconductor device comprises a high voltage nLIGBT device (1), a first type of high voltage nLDMOS device (2), a second type of nLDMOS device (3), a third type of nLDMOS device (4), a low voltage NMOS device (5), a low voltage PMOS device (6) and a low voltage NPN device (7), wherein n-type drift region wells (21, 22) of the high voltage nLIGBT device (1) and of the first type of high voltage nLDMOS device (2) are respectively introduced with n-type heavily-doped layers (201, 202), and p-type reduced-field layers (301, 302) are respectively arranged below the n-type heavily-doped layers (201, 202) and are surrounded by the n-type drift region wells (21, 22). A smaller conduction resistance is realized while chip areas are the same, or a smaller chip area is realized while conduction capabilities are the same. The BCD semiconductor device has advantages of simple manufacturing method and relatively less difficult technology.

The invention relates to semiconductor technologies and provides a groove-gate semiconductor power device which is used for solving the problem that the high-K dielectric role of the existing semiconductor device can not be played under the conditions of relatively-large spacing and small density of dielectric grooves. The technical scheme adopted by the invention can be summarized as follows: two high-K dielectric regions are additionally arranged at the left side and right side of a semiconductor drift region, the two sides of a first semiconductor region in the semiconductor drift region are in contact with two second semiconductor regions, and the two high-K dielectric regions are respectively in contact with the other sides of the two second semiconductor regions. The groove-gate semiconductor power device has the beneficial effects that the specific on-resistance is reduced, the voltage resistance is improved, and the groove-gate semiconductor power device is applicable to an MOS (Metal-Oxide Semiconductor) device or an MOS-controlled semiconductor device.

The invention relates to a method of fabricating a trench isolation gate device. The method comprises steps: a semiconductor substrate is etched to form a trench; an oxide is deposited in the trench to form a floating gate oxide layer, the floating gate oxide layer is gradually thickened from top to bottom along the side wall of the trench, and the thickness of the floating gate oxide layer at thelower part of the side wall of the trench is the same as that of the floating gate oxide layer at the bottom part of the trench; polysilicon is deposited in the trench to form a floating gate polycrystalline layer; an insulating medium grows on the upper surface of the floating gate polycrystalline layer to form an isolation layer; and a control gate is formed on the isolation layer in the trench. A deposition technology is adopted to deposit the floating gate oxide layer at the bottom part of the trench, the floating gate oxide layer is gradually thickened from the side wall of the trench tothe bottom of the trench, and the thickness of the floating gate oxide layer at the lower part of the side wall of the trench is the same as that of the floating gate oxide layer at the bottom part of the trench. The gradually-changing floating gate oxide layer thickness can narrow the width of the trench, the cell area is further reduced, and the specific on-resistance of the device is reduced.

The invention relates to a layout structure of transverse power components and belongs to the technical field of semiconductor power components. The power components form a cellular arrangement structure on the transversal section; each cellular has the same structure and is provided with the following elements from inside to the outside: a drain electrode, a light dope drift area, a gate electrode and a source electrode, and the drain electrode is enclosed by the light dope drift area, the light dope drift area is enclosed by the gate electrode, and the gate electrode is enclosed by the source electrode; and the transversal sections of each source electrode, gate electrode, light dope drift area and drain electrode of each cellular are of the same shape, and are round or positive n polygons, wherein n is more than or equal to 3. The invention has the advantages of compact layout without additional curvature terminal design, has low on-resistance, small parasitic capacitance, quick switching speed, strong current capacity and the like, and can be used in the layout structure of the transverse power components such as LDMOS, LIGBT and the like.

The invention provides an SOI horizontal power MOSFET device and belongs to the technical field of power semiconductor devices. A dielectric groove is introduced in a drift region and filled with two or more dielectric materials, and the dielectric coefficients of the dielectric materials are lower than the dielectric coefficient of an active layer and are gradually decreased from bottom to top; the side, close to a body region, of the dielectric groove is of a body region longitudinal extension structure; a semiconductor buried layer opposite to the drift region in doping type is arranged between the dielectric groove and a dielectric buried layer. Because the dielectric groove filled with the variable k dielectric materials has an modulating action on an internal electric field of the active layer and plays a role in longitudinally folding the drift region, the voltage resistance of the device is greatly improved, and the horizontal size of the device is reduced; because of introduction of the body region longitudinal extension structure and the semiconductor buried layer, the voltage resistance of the device is further improved, the exhausting action on the drift region is enhanced, the doping concentration of the drift region can be improved, and therefore the on resistance of the device is reduced; the grid and drain capacitance of the device can be further reduced through the dielectric groove, and the frequency and output power of the device are improved.

The invention relates to semiconductor technologies, in particular to a laterally high-voltage MOSFET and a manufacturing method thereof. The laterally high-voltage MOSFET is characterized in that a first-kind conduction type semiconductor field dropping layer is formed in a second conduction type semiconductor drift region through photoetching and ion implantation technologies, and a second conduction type semiconductor heavy doping layer is formed on the surface of the second conduction type semiconductor drift region through the photoetching and ion implantation technologies. The laterally high-voltage MOSFET has the advantages that under the circumstance that high breakdown voltage is guaranteed, specific on-resistance of the MOSFET can be greatly reduced, meanwhile the electric field peak value of the source end of the laterally high-voltage MOSFET is reduced, high-field effects are avoided, breakdown voltage of the MOSFET is improved, the MOSFET has lower on-resistance and a smaller chip area under the condition of the same breakover capacity, and a surface electric field of the MOSFET is well optimized; meanwhile, the manufacturing method is simple, low in technological difficulty and especially suitable for the laterally high-voltage MOSFET.

The invention discloses a super-junction device. The super-junction device comprises a super-junction structure, channel regions, a buffer layer, source regions and a drift region; first conductive type columns and second conductive type columns are alternately arranged so as to form the super-junction structure; a drain region is formed by a semiconductor substrate at the bottom of the buffer layer; the source regions are formed at the surfaces of the channel regions; the drift region, the channel regions and the second conductive type columns form a parasitic body diode; the first buffer sub-layer and a second sub-layer are stacked together to form the buffer layer; the doping concentration of the second sub-layer is lower than the doping concentration of the first conductivity type columns; the softness factor of the reverse recovery of the super-junction device can be increased by adjusting the doping concentration of the second buffer sub-layer; the doping concentration of the first buffer sub-layer is higher than the doping concentration of the second buffer sub-layer; and the specific on-resistance of the super-junction device can be maintained or decreased by adjusting thedoping concentration of the first buffer sub-layer. With the super-junction device of the invention adopted, the softness factor of the reverse recovery can be improved, the cost of the device and thespecific on-resistance of the device can be reduced, and the breakdown voltage of the device can be improved.

The invention provides a transverse MOS device and a preparation method thereof, belonging to the technical field of semiconductor power devices. The invention introduces a deep dielectric trench, a semi-insulating polysilicon column and a buffer layer into the drift region of a conventional transverse MOS type device. The introduction of deep dielectric trench makes the device form U-shaped conductive channel, which effectively increases the length of drift region under the same device length. A 3-D resistive field plate structure is for by alternately connecting that semi-insulating polysilicon column and the drift region along the transverse extension direction of the deep dielectric trench so as to introduce a multi-dimensional depletion action in the drift region when the device is blocked to increase the doping concentration of the drift region, The drift region width on both sides of the deep trench is not limited by the doping dose, which improves the electric field distribution in the drift region, increases the breakdown voltage of the device and reduces the specific on-resistance/on-voltage drop of the device. The introduction of buffer layer can improve the charge balance characteristics of three-dimensional dielectric superjunction structure, and further improve the performance and reliability of the device.

The present invention discloses a super junction device. The super junction device comprises: a super junction structure formed by first conduction type columns and second conduction type columns which are alternately arranged; channel regions; a buffer layer; a drain region formed by a semiconductor substrate at the bottom portion of the buffer layer; source regions formed at surfaces of the channel regions; one first conduction type injection region formed at the surface of the buffer layer at the bottom portion of each second conduction type column; and a parasitic body diode formed by a drift region, the channel regions and the second conduction type columns, wherein the first conduction type injection regions are configured to reduce exhaustion of the buffer layer when the parasitic body diode is reversely biased so that reversely recovered soft factors are improved. The present invention further discloses a manufacturing method of a super junction device. The reversely recoveredsoft factor can be improved, the device cost is reduced, and the specific on-state resistance of the device is reduced.

The invention provides a lateral high-voltage device, and the device comprises a dielectric trench. Doped strip overlapping structures of different doping types which are arranged alternately are disposed at at least one of the following positions: a part below the dielectric trench, the left side of the dielectric trench and the right side of the dielectric trench. The device also comprises a dielectric layer, a volume field plate, a polysilicon gate, a grid lower oxidation layer, a first N-type heavy doped region, a second N-type heavy doped region, a P-type heavy doped region, a P well region, a first N-type doping strip, a second N-type doping strip, a third N-type doping strip, a first P-type doping strip, and a second P-type doping strip. The bottom of a conduction circuit is a P-type substrate. According to the invention, the dielectric trench is introduced to a drift region, and the surface area of the device is reduced while the withstand voltage is maintained. Moreover, the specific on-resistance of the device is reduced. The overlapped heavy doped N strips and P strips are introduced to the drift region of the device, thereby providing a low-resistance conduction loop for the on state of the device, further reducing the specific on-resistance of the device, and finally achieving the purposes of effectively reducing the area of the device and the on-resistance.

The invention provides a low-resistance device with equipotential floating grooves, and the device comprises a first conductive type semiconductor substrate, a first conductive type well region, a first conductive type source end heavily doped region, a second conductive type drift region, a second conductive type well region, a second conductive type source end heavily doped region and a second conductive type drain end heavily doped region, a first dielectric oxide layer, a second dielectric oxide layer, a third dielectric oxide layer, a floating field plate polycrystalline silicon electrode, a control gate polycrystalline silicon electrode, source metal, drain metal and a metal strip; the first dielectric oxide layer and the floating field plate polycrystalline silicon electrode form alongitudinal floating field plate which is distributed in the whole second conductive type drift region; under the same length, the dielectric layer can bear higher breakdown voltage, the floating electrode can modulate the potential distribution of the drift region, so the potential distribution is uniform, the withstand voltage of the device is further improved, the floating field plate assistsin depletion, and the injection dose of the drift region can also be improved, so that the specific on-resistance is reduced.

The invention discloses a 4H-SiC MOSFET power device and a manufacturing method thereof. The power device comprises a source electrode (1), an SiO2 interlayer dielectric (2), a grid electrode (3), a gate oxide layer (4), a P + contact region (5), an N+ source region (6), a P well (7), an additionally injected P-type region (8), an N type epitaxial layer (9), an N-epitaxial layer (10), a buffer layer (11), an N+ substrate (12) and a drain electrode (13). The 4H-SiC MOSFET power device disclosed in the invention adopts a separation grid structure, and by virtue of the structure the input capacitance and the grid leakage capacitance can be effectively lowered, and the switching performance of the device is improved; by introducing P type doping in a JFET region, the electric field intensity of a gate oxide layer can be effectively reduced, and the reliability of the device is improved; and in addition, a current expanding layer structure is adopted, so that the current capability of the device can be considered.

The invention discloses a superjunction device. A current flowing area comprises a plurality of N type thin layers and P type thin layers, the N type thin layers and the P type thin layers are alternately arranged, a plurality of grooves are formed in a silicon substrate, and each N type thin layer comprises a first N type thin layer and a second N type thin layer; each first N type thin layer comprises a silicon substrate bottom thin layer between adjacent grooves, each second N type thin layer has lower electrical resistivity, electric charges of at least the second N type thin layers and the adjacent P type thin layers are balanced, electric charges of at least part of N type thin layers and the adjacent P type thin layers are not balanced, and N type areas comprising back ion injection areas are formed at bottoms of the N type thin layers and P type thin layers. The invention further discloses a manufacturing method of the superjunction device. According to the superjunction device and the manufacturing method of the superjunction device, the manufacturing cost can be minimized, and meanwhile, specific on-state resistance of the device and softness coefficient of reverse recovery of the device in a turn-off process can be optimized.