The utility model provides a kind of ultrahigh pressure
MOSFET terminal structure, above-mentioned terminal structure includes: substrate, it is in and set up main knot and VLD knot, the depth of the VLD knot gradually becomes smaller along the direction away from the main knot;
Oxide layer is located on the substrate;Polysilicon field plate is located on the
oxide layer;
Dielectric layer is located on the polysilicon field plate;And
metal field plate is located on the
dielectric layer.The utility model embodiment is changed by setting VLD knot and its depth, and is matched with polysilicon field plate and
metal field plate, while guaranteeing
high pressure resistance, so that terminal structure is shorter, cost is less, and reliability is higher.