3 results about "High voltage mosfet" patented technology

The utility model provides a kind of ultrahigh pressure MOSFET terminal structure, above-mentioned terminal structure includes: substrate, it is in and set up main knot and VLD knot, the depth of the VLD knot gradually becomes smaller along the direction away from the main knot;Oxide layer is located on the substrate;Polysilicon field plate is located on the oxide layer;Dielectric layer is located on the polysilicon field plate;And metal field plate is located on the dielectric layer.The utility model embodiment is changed by setting VLD knot and its depth, and is matched with polysilicon field plate and metal field plate, while guaranteeing high pressure resistance, so that terminal structure is shorter, cost is less, and reliability is higher.

The invention relates to the technical field of LED drive circuits, and discloses a circuit for improving on-off performance of an LED drive chip, which comprises a voltage transient detection module, a current-limiting charging module, a protection trigger module, a clamping control module, an accumulation charging module and a shutdown protection module. The voltage transient detection module detects whether the voltage of the VOUT pin exceeds a first voltage threshold value or not through a first voltage stabilizing diode, and establishes a current bypass channel; the current-limiting charging module controls the magnitude of bypass current through a current-limiting resistor; the protection trigger module utilizes bypass current to enable ISET voltage to rise to trigger overcurrent protection in a chip, and the ultrahigh-voltage MOSFET is turned off; the clamping control module clamps the ISET voltage in a safe range through a second voltage stabilizing diode; and the accumulative charging module realizes progressive charging of the electrolytic capacitor in a plurality of alternating current periods. Chip thermal breakdown caused by high-voltage and large-current impact at the starting moment can be effectively prevented, the reliability of an LED driving system is improved, and the service life of the LED driving system is prolonged.

An HV MOSFET device has a body integrating source conductive regions. Projecting gate structures are disposed above the body, laterally offset with respect to the source conductive regions. Source contact regions, of a first metal, are arranged on the body in electric contact with the source conductive regions, and source connection regions, of a second metal, are arranged above the source contact regions and have a height protruding with respect to the projecting gate structures. A package includes a metal support bonded to a second surface of the body, and a dissipating region, above the first surface of the semiconductor die. The dissipating region includes a conductive plate having a planar face bonded to the source connection regions and spaced from the projecting gate structures. A package mass of dielectric material is disposed between the support and the dissipating region and incorporates the semiconductor die. The dissipating region is a DBC-type insulation multilayer.